The present invention relates to novel organic compounds that may be advantageously used in organic light emitting devices. More particularly, the invention relates to iridium complexes and their use in OLEDs.
Opto-electronic devices that make use of organic materials are becoming increasingly desirable for a number of reasons. Many of the materials used to make such devices are relatively inexpensive, so organic opto-electronic devices have the potential for cost advantages over inorganic devices. In addition, the inherent properties of organic materials, such as their flexibility, may make them well suited for particular applications such as fabrication on a flexible substrate. Examples of organic opto-electronic devices include organic light emitting devices (OLEDs), organic phototransistors, organic photovoltaic cells, and organic photodetectors. For OLEDs, the organic materials may have performance advantages over conventional materials. For example, the wavelength at which an organic emissive layer emits light may generally be readily tuned with appropriate dopants.
OLEDs make use of thin organic films that emit light when voltage is applied across the device. OLEDs are becoming an increasingly interesting technology for use in applications such as flat panel displays, illumination, and backlighting. Several OLED materials and configurations are described in U.S. Pat. Nos. 5,844,363, 6,303,238, and 5,707,745, which are incorporated herein by reference in their entirety.
One application for phosphorescent emissive molecules is a full color display. Industry standards for such a display call for pixels adapted to emit particular colors, referred to as “saturated” colors. In particular, these standards call for saturated red, green, and blue pixels. Color may be measured using CIE, coordinates, which are well known to the art.
In recent years, many researches indicate that the iridium complex is regarded as the most ideal selection of OLEDs phosphor materials among many heavy metal element complexes. After forming +3 cation, the Iridium atoms with 5d76s2 outer electron structure owns the 5d6 electron configuration and the stable hexa-coordinate octahedral structure, which lets the materials own higher chemical stability and heat stability. Meanwhile, Ir(III) owns larger spin-orbit coupling constants (ξ=3909 cm−1), which is conductive to improving the quantum yield of complexes and reducing the luminescence Lifetime, thus improving the whole performance of illuminator.
As the phosphor materials, in general, the iridium complex easily causes in the microsecond phosphorescence quenching between triplet-triplet of iridium complex and triplet-polaron. In addition, in the current common materials, the hole mobility of hole-transport material is far higher than the electronic mobility of electron transport material, and the common host materials give priority to the hole transport, which would cause that many redundant electron holes gather on the luminescent layer and electron transfer layer surface. All these factors would result the efficiency reduction and the severe efficiency roll-off. It's indicated in the research that: in case of owning higher electronic transmission ability, the iridium complex could effectively increase the transmission and distribution of electron in luminescent layer, expand the area of electron-hole and balance the quantity of electron-hole pairs, which greatly improves the efficiency of device and reduces the efficiency roll-off.
Thereof, it is necessary to disclose and provide improved Iridium complex to overcome the above-mentioned disadvantages.
The present disclosure will hereinafter be described in detail with reference to an exemplary embodiment. To make the technical problems to be solved, technical solutions and beneficial effects of the present disclosure more apparent, the present disclosure is described in further detail together with the figure and the embodiment. It should be understood the specific embodiment described hereby is only to explain the disclosure, not intended to limit the disclosure.
All the iridium complexes of the invention have used iridium chloride hydrate, 4,6-2 -(trifluoromethyl)pyridine-3 -boric acid, 4,6-2-(trifluoromethyl)pyridine-4-boric acid, 2-bromopyridine derivatives, 2-bromopyrimidine derivatives, 2-bromopyrazine derivatives, 2-bromotriazine derivatives etc, in the synthesis process with the similar method of synthesis. Mix iridium dimer bridging ligand containing two primary ligand, and an auxiliary ligand of 4(3,5-pyrimidine) phosphonimidesas and sodium carbonate, the primary ligand is any one derivative of the following ones:
Then add the mixed solution into 2-ethoxyethanol solution, conduct heating reaction under 120-140° C. for a reaction time of 12-48 h, cool to room temperature, eliminate the solvent through depressurization and distillation, then extract and concentrate with dichloromethane, get the crude product of the ligand through column chromatography isolation, and get pure iridium complex through sublimation.
Wherein, the iridium dimer bridging ligand contains any one derivative of the following ones:
The mole ratio of the iridium dimer bridging ligand: the tetraphenylphosphorane: sodium carbonate is 1:2:5.
Iridium complex has one of the following structure:
The invention is further described below with reference to one of the embodiments of complex GIr7-001, to help improve understanding of the invention, but not limit to the present invention.
Manufacturing method of complex GIr7-001
Dissolve 2-bromopyridine(26.39 mmol), 4,6-4,6-2 -(trifluoromethyl)pyridine-3 -boric acid (31.66 mmol), tetrakis(triphenylphosphine) palladium (0.79 mmol) and sodium carbonate (60.00 mmol) in 10 mL of tetrahydrofuran, react under 65° C. for 24 hours and cool, add water and dichloromethane, then get the primary ligand through organic layer concentration column chromatography (yield of 52.24%). Dissolve the primary ligand (13.08 mmol) and iridium chloride hydrate into 15 mL of 2-ethoxyethanol, the mixture reacts under 130° C. for 12 h, then add 4(3,5-pyrimidine) phosphonimidesas (12.46 mmol) and sodium carbonate (60.00 mmol), then continue to react under 130° C. for 24 h. Systematic cooling, add water and dichloromethane, get yellow solid GIr7-001 through organic layer concentration column chromatography (yield of 44%).
NMR and mass spectrometry characterization:1H NMR (500 MHz, CDCl3) δ 9.09 (d, J=5.6 Hz, 2H), 8.29 (d, J=8.4 Hz, 2H), 7.78 (dd, J=12.4, 7.7 Hz, 4H), 7.66 (t, J=8.0 Hz, 2H), 7.37 (ddd, J=19.9, 13.9, 7.5 Hz, 6H), 7.16 (t, J=7.4 Hz, 2H), 7.04 (t, J=6.7 Hz, 4H), 6.83 (t, J=6.5 Hz, 2H). ESI-MS: m/z 1199.09 [M]+, found: 1198.83 [M]+.
The invention takes any one of
All the azacycles are groups with relatively high electron transmission performance, facilitating to balance the import and transmission of carriers.
The iridium complexes has relatively high luminous efficiency and high electron mobility, and can be prepared by simple method with high yield after optimization and verification.
Preparation of Organic Light-Emitting Diode Devices
Next the preparation of organic light-emitting diode devices of the invention is described, as exemplified with GIr7-001 as organic light-emitting diode devices. The OLED devices has a structure including: Substrate, anode, hole transmission layer, organic light-emitting layer, electron transmission layer and cathode.
In the device making of the invention, the substrate is glass, the anode material is indium tin oxide (ITO); the hole transmission layer is made of 4,4′-Cyclohexylidenebis[N,N-bis(4-methylphenyl)aniline] (TAPC), the electron transmission layer is made of 3,3′-(5′-(3-(pyridin-3-ylphenyl)phenyl)-[1,1′:3′,1″-triphenyl]-3,3″-diyl)bipyridine (TmPyPB) material, with a thickness of 60 nm and a vapor deposition rate of 0.05 nm/s; the cathode is made of LiF/Al, LiF with a thickness of 1 nm and a vapor deposition rate of 0.01 nm/s, Al with a thickness of 100 nm and a vapor deposition rate of 0.2 nm/s. The organic light-emitting layer is in a doped structure, the body is made of 1,3-bis(9H-carbazol-9-yl)benzene/mCP, the selected luminous material is GIr7-001. The light-emitting layer has a thickness of 40 nm, a vapor deposition rate of 0.05 nm/s, a GIr7-001 mass fraction of 8%.
The materials used in the invention have the following structures:
The invention selects a green emitting complex for preparing organic light-emitting diode devices. Please refer to
The phosphorescent material provided by the invention can act as luminescence center and applied in emitting layer of phosphorescent OLED, by design of ligand or complex structure, and by modification of chemical substituent of the ligand, the invention achieves the goal of regulating emitting color and efficiency.
It is to be understood, however, that even though numerous characteristics and advantages of the present exemplary embodiment have been set forth in the foregoing description, together with details of the structures and functions of the embodiment, the disclosure is illustrative only, and changes may be made in detail, especially in matters of shape, size, and arrangement of parts within the principles of the invention to the full extent indicated by the broad general meaning of the terms where the appended claims are expressed.
Number | Date | Country | Kind |
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201610214529.2 | Apr 2016 | CN | national |