This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2022-041048, filed on Mar. 16, 2022; the entire contents of which are incorporated herein by reference.
Embodiments relate to an isolator
There is an isolator including magnetically coupled primary and secondary coils in which signal transmission is performed from the primary side to the secondary side via the magnetic coupling. In such an isolator, it is important to maintain a high dielectric breakdown voltage between the primary side and the secondary side.
According to one embodiment, an isolator includes a first coil, a second coil, a first insulating film and a primary side conductor. The first coil being provided at a primary side. The second coil is provided at a secondary side. The second coil is magnetically coupled to the first coil. The first insulating film is provided between the first coil and the second coil. The second coil is provided at a front surface side of the first insulating film. The first coil is provided at a back surface side of the first insulating film. The primary side conductor is provided at the front surface side of the first insulating film. The primary side conductor is apart from the second coil and electrically connected to the primary side. The first insulating film includes a plurality of island-shaped convex portions provided at the front surface side. The plurality of island-shaped convex portions are provided between the second coil and the primary side conductor. The plurality of island-shaped convex portions provides a creepage distance from the second coil to the primary side conductor along the front surface of the first insulating film. The creepage distance is longer in any direction along the front surface of the first insulating film than a direct distance from the second coil to the primary side conductor.
Embodiments will now be described with reference to the drawings. The same portions inside the drawings are marked with the same numerals; a detailed description is omitted as appropriate; and the different portions are described. The drawings are schematic or conceptual; and the relationships between the thicknesses and widths of portions, the proportions of sizes between portions, etc., are not necessarily the same as the actual values thereof. The dimensions and/or the proportions may be illustrated differently between the drawings, even in the case where the same portion is illustrated.
There are cases where the dispositions of the components are described using the directions of XYZ axes shown in the drawings. The X-axis, the Y-axis, and the Z-axis are orthogonal to each other. Hereinbelow, the directions of the X-axis, the Y-axis, and the Z-axis are described as an X-direction, a Y-direction, and a Z-direction. Also, there are cases where the Z-direction is described as upward and the direction opposite to the Z-direction is described as downward.
The primary side conductor 30 is provided at the same level as a level of the second coil 20 in a direction directed from the first coil 10 toward the second coil 20, for example, in a Z-direction. The primary side conductor 30 serves as, for example, an external terminal for supplying a reference potential to the primary side circuit.
As shown in
The primary side conductor 40 is provided at the same level as a level of the first coil 10 in the Z-direction. The primary side conductor 40 is electrically connected to the first coil 10 via, for example, a wiring (not shown) or a circuit (see
The first insulating film 50 is provided on the first coil 10. The first insulating film 50 is, for example, a silicon oxide film. The first insulating film 50 is provided between the first coil 10 and the second coil 20. The first coil 10 is provided at, for example, a back surface side of the first insulating film 50. The second coil 10 is provided at, for example, a front surface side of the first insulating film 50. The second coil 20 and the primary side conductor 30 are provided at the front surface side of the first insulating film 50, and apart from each other.
The first insulating film 50 has a film thickness capable of electrically insulating the second coil 20 from the first coil 10. The first insulating film 50 provides a desired dielectric breakdown voltage between the first coil 10 and the second coil 20. The first insulating film 50 extends between the primary side conductor 30 and the primary side conductor 40. The connection conductor 35 is, for example, a contact plug extending in the first insulating film 50. The connection conductor 35 is, for example, a conductor including a metal such as copper.
The second coil 20 is provided on the first insulating film 50 at a side opposite to the first coil. The second coil 20 is embedded in, for example, the first insulating film 50. The second coil 20 is, for example, a conductor including a metal such as copper.
The second insulating film 60 is provided on the first insulating film 50. The second insulating film 60 covers the second coil 20 and the primary side conductor 30. The second insulating film 60 is, for example, a silicon oxide film. The second insulating film 60 may be different in a composition from the first insulating film 50.
The third insulating film 70 is provided between the semiconductor substrate SS and the first insulating film 50. The third insulating film 70 is, for example, a silicon oxide film. The first coil 10 and the primary side conductor 40 are embedded in the third insulating film 70. The first coil 10 and the primary side conductor 40 are provided between the first insulating film 50 and the third insulating film 70. The first coil 10 and the primary side conductor 40 are, for example, conductors including a metal such as copper.
As shown in
When an interface of low electrical resistance is provided between the first insulating film 50 and the second insulating film 60, however, the dielectric breakdown voltage decreases between the primary side and the secondary side. For example, when a foreign substance due to the manufacturing process or mobile ions exists between the first insulating film 50 and the second insulating film 60, the dielectric breakdown voltage decreases between the primary side and the secondary side. Moreover, there may be a defect such as an initial deposition material in the process of forming the second insulating film 60, which reduces the dielectric breakdown voltage.
For example, an insulating film formed using chemical vapor deposition (CVD) includes the initial deposition material having a thickness of about several tens nanometers (nm). Such an initial deposition material may be different in the composition and crystallinity from the insulating film and reduce the dielectric breakdown voltage. The initial deposition layer including such material is confirmed by, for example, a contrast in the cross-sectional TEM image (Transmission Electron Microscope image) of the insulating film.
In the isolator 1 according to the embodiment, multiple island-shaped convex portions IP are provided between the second coil 20 and the primary side conductor 30. The island-shaped convex portions IP are provided, for example, at the front surface side of the first insulating film 50. The island-shaped convex portions IP provides a creepage distance from the second coil 20 to the primary side conductor 30 along the front surface of the first insulating film 50. Thus, by providing the creepage distance longer than the direct distance HD from the second coil to the primary side conductor 30, it is possible to increase the electrical resistance at the interface between the first insulating film 50 and the second insulating film 60.
As shown in
As shown in
The multiple island-shaped convex portions IP, for example, are provided to surround the second coil 20. The primary side conductor 30 may be provided at any position such as P1, P2 or P3 outside the area in which the island-shaped convex portions IP are provided. The island-shaped convex portions IP provide the creepage distance from the second coil 20 to any one of the positions P1 to P3 longer than the direct distance HD therebetween. That is, as shown by arrows in
As shown in
The etching mask EM is, for example, a photoresist. The etching mask EM is formed by, for example, photolithography pattering. In the area where the island-shaped convex portions IP are formed, the etching mask EM is shaped into, for example, a regular hexagonal.
As shown in
As shown in
A method for manufacturing the island-shaped convex portions IP is not limited to the example described above. For example, fine convex portions of island-shape may be formed by roughening the front surface of the first insulating film 50. For example, atypical random unevenness is formed in the front surface of the insulating film 50 by liquid phase etching or the like. Such an unevenness includes, for example, a step of several hundred nm, and the convex portions preferably have the area ratio of about 50%. Moreover, an unevenness including a step of several tens nm is also effective, and a superior dielectric breakdown voltage can be achieved in combination with the adhesion improvement described later.
In the example shown in
In the example shown in
As shown in
As described above, by providing the multiple island-shaped convex portions IP with a polygonal planar shape of different size, it is possible to achieve an arrangement in which the creepage distance is longer than the direct distance HD in any direction.
The four second coils 20 are shown in
As shown in
For example,
In the isolator 2 according to the embodiment, the multiple island-shaped convex portions IP can be provided without increasing a space between each of the second coils 20 and the primary side conductor 30. Moreover, the arrangement of the island-shaped convex portions IP does not depend on respective shapes and arrangements of the second coils 20 and the primary side conductor 30. That is, the island-shaped convex portions IP according to the embodiment are suitable for miniaturization of the isolator 2 and have a large degree of flexibility in the arrangement.
As shown in
The first film 51 of the first insulating film 50 is, for example, a silicon carbonitride film (SiCN film) formed using plasma enhanced chemical vapor deposition (PCVD). The first film 51 is provided on the third insulating film 70. The first film 51 prevents metal atoms of the first coil 10 and the primary side conductor 40 from diffusing into the first insulating film 50.
The second film 53 is, for example, a silicon oxide film formed using chemical vapor deposition (CVD). The second film 53 is provided on the first film 51. The second film 53 is provided between the first coil 10 and the second coil 20, and has a film thickness capable of ensuring a dielectric breakdown voltage therebetween. The second film 53 has a film thickness of, for example, 5 micrometers or more in the Z-direction.
The third film 55 is, for example, a silicon nitride film formed using PCVD. The third film 55 is provided on the second film 53. Further, the fourth film 57 is provided on the third film 55. The fourth film 57 is, for example, a silicon oxide film formed using PCVD.
The second coil 20 is provided in the fourth film 57. In a process of forming the second coil 20, the third film 55 serves as an etching stop film. That is, when a groove for embedding the second coil 20 and the primary side conductor 30 is formed in the fourth film 57, the third film 55 prevents excessive etching so that the groove does not reach the second film 53.
The first film 61 of the second insulating film 60 is provided on the first insulating film 50. The first film 61 is, for example, a SiCN film. The first film 61 prevents diffusion of metal atoms of the second coil 20 and the primary side conductor 30.
The second film 63 is provided on the first film 61. The second film 63 is, for example, a silicon oxide film formed using CVD. The second film 63 is formed to cover the second coil 20.
The third film 65 is provided on the second film 63 and the first film 61. The third film 65 is provided between the second coil 20 and the primary side conductor 30. The third film 65 is in contact with the first film 61. The third film 65 is, for example, a silicon oxide film formed using PCVD.
The first film 73 of the third insulating film 70 is provided on the semiconductor substrate SS. The first film 73 is, for example, a silicon oxide film formed using CVD. The first film 73 is formed as an interlayer insulating film.
The second film 75 is provided on the first film 73. The second film 75 is, for example, a silicon oxide film formed using PCVD. The first coil 10 and the primary side conductor 40 are provided in the second film 75.
As shown in
In the isolator 2, the island-shaped convex portions IP are provided on a front surface of the fourth film 57 of the first insulating film 50. Therefore, the creepage distance can be made longer than the direct distance HD respectively at an interface between the fourth film 57 of the first insulating film 50 and the first film 61 of the second insulating film 60 and an interface between the first and third films 61 and 65 of the second insulating film 60. Accordingly, a dielectric breakdown voltage can be increased between the second coil 20 and the primary side conductor 30.
Further, by improving adhesion strength at the interface between the fourth film 57 of the first insulating 50 and the first film 61 of the second insulating film 60, it is possible in a temperature cycle test (TCT) to disperse the stress due to a sealing resin. In other words, the interface stability can be ensured by improving the adhesion strength in combination with the increased creepage distance by the multiple convex portions. That is, a linear expansion coefficient of the first film 61 of the second insulating film 60 can be smaller than linear expansion coefficients of the third film 65 of the second insulating film and the fourth film 57 of the first insulating film 50. The film thickness of the first film 61 of the second insulating film 60 can be thinner than the film thickness of the third film 65 of the second insulating film 60 and the film thickness of the fourth film 57 of the first insulating film 50. Therefore, the stress relaxation is advantageously achieved at the interfaces between the fourth film 57 of the first insulating film 50 and the first film 61 of the second insulating film 60 and between the first film 61 of the second insulating film 60 and the third film 65 of the second insulating film 60. That is, a thin film such as the first film 61 of the second insulating film 60 is sandwiched between thick films such as the fourth film 57 of the first insulating film 50 and the third film 65 of the second insulating film 60, and the thick films have a linear expansion coefficient different from a linear expansion coefficient of the thin film. Thereby, it is possible to obtain a higher dielectric breakdown voltage by the improved adhesion strength in combination with the increased creepage distance by the multiple convex portions.
While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the invention.
Number | Date | Country | Kind |
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2022-041048 | Mar 2022 | JP | national |