Claims
- 1. A method for manufacturing a laminated solid-state image pickup device, said method comprising the steps of:
- forming a carrier transfer layer comprising a first semiconductor region of a first conduction type, intrinsic or having a low impurity density, on accumulating portions for accumulating electric signals, in a semiconductor circuit substrate by selective crystal growth due to a CVD method under the atmosphere of reduced pressure, said semiconductor circuit substrate comprising reading means for reading the electric signals and said accumulating portions;
- forming a conductive material around the first semiconductor region;
- providing an insulating layer between the first semiconductor region and the conductive material; and
- forming a photoconductive film comprising a carrier multiplication layer, a light absorbing layer and a charge injection inhibiting layer on the first semiconductor region and the conductive material.
- 2. A method according to claim 1, wherein the conductive material is selected from a metal, an alloy, a low-resistivity semiconductor and a silicide.
- 3. A method according to claim 1, wherein the photoconductive film comprises a non-single-crystalline semiconductor.
- 4. A method according to claim 1, wherein the insulating layer is formed by thermal oxidation of the first semiconductor region.
Priority Claims (2)
Number |
Date |
Country |
Kind |
5-229605 |
Aug 1993 |
JPX |
|
6-174292 |
Jul 1994 |
JPX |
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Parent Case Info
This application is a division of application Ser. No. 08/288,546 filed Aug. 10, 1994, U.S. Pat. No. 5,481,124.
US Referenced Citations (17)
Foreign Referenced Citations (6)
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437633 |
Jul 1991 |
EPX |
542152 |
May 1993 |
EPX |
49-91116 |
Aug 1974 |
JPX |
51-10715 |
Jan 1976 |
JPX |
63-66965 |
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JPX |
Divisions (1)
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Number |
Date |
Country |
Parent |
288546 |
Aug 1994 |
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