Laser Annealing of Plasma Deposited High Critical Temperature Superconducting Thick Films and Devices (REU Supplement)

Information

  • NSF Award
  • 8822195
Owner
  • Award Id
    8822195
  • Award Effective Date
    6/1/1989 - 35 years ago
  • Award Expiration Date
    11/30/1991 - 33 years ago
  • Award Amount
    $ 241,000.00
  • Award Instrument
    Standard Grant

Laser Annealing of Plasma Deposited High Critical Temperature Superconducting Thick Films and Devices (REU Supplement)

This research includes an analysis and extension of the plasma spray process, the establishment of laser annealing parameters, development of laser etching techniques, design and fabrication of thick film devices for high frequency applications, acquisition of families of test data, and optimization of a proof-of-concept system using plasma spraying, laser annealing, and laser etching for the fabrication of microwave, millimeterwave and sub-millimeterwave devices. An important aspect of this program lies in the development of processing techniques for large scale production of electronic and microwave components.

  • Program Officer
    Ritchie B. Coryell
  • Min Amd Letter Date
    5/31/1989 - 35 years ago
  • Max Amd Letter Date
    4/5/1990 - 34 years ago
  • ARRA Amount

Institutions

  • Name
    American Research Corporation of Virginia
  • City
    Radford
  • State
    VA
  • Country
    United States
  • Address
    PO Box 3406
  • Postal Code
    241433406
  • Phone Number
    5407310655

Investigators

  • First Name
    Russell
  • Last Name
    Churchill
  • Email Address
    arcova@swva.net
  • Start Date
    6/1/1989 12:00:00 AM

FOA Information

  • Name
    Engineering NEC
  • Code
    59
  • Name
    Industrial Technology
  • Code
    308000