BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a schematic cross-sectional view illustrating the configuration of a laser apparatus according to first Embodiment of the present invention.
FIG. 2 is a schematic plane view illustrating a configuration example of the laser apparatus using an i-type three dimensional photonic crystal according to first Embodiment of the present invention.
FIG. 3 is a schematic cross-sectional view illustrating the configuration of a laser apparatus according to second Embodiment of the present invention.
FIG. 4 is a schematic plane view illustrating a configuration example of the laser apparatus using an i-type three dimensional photonic crystal according to first Embodiment of the present invention.
FIGS. 5A, 5B, 5C, 5D, 5E, 5F, 5G, 5H and 5I are schematic cross-sectional views illustrating a production method of a laser apparatus according to third Embodiment and Example 1 of the present invention.
FIGS. 6A, 6B, 6C and 6D are schematic cross-sectional views illustrating a formation method of an active portion in Example 1 of the present invention.
FIG. 7 is a perspective view illustrating a conventional three dimensional photonic crystal with a woodpile structure disclosed in U.S. Pat. No. 5,335,240.
FIG. 8 is a cross-sectional view illustrating a conventional semiconductor laser device disclosed in Japanese Patent Application Laid-Open No. 2001-247425.