Laser Crystallization of Spin-on Ferroelectric Thin Films for Non-volatile Random

Information

• NSF Award
• 9403494

Owner

• American Research Corporation

• Award Id

  9403494

• Award Effective Date

  2/1/1995 - 30 years ago

• Award Expiration Date

  1/31/1997 - 28 years ago

• Award Amount

  $ 315,932.00

• Award Instrument

  Standard Grant

This SBIR Phase II award addresses laser crystallization of spin-on ferroelectric thin films for applications in ferroelectric non-volatile random access memories (FNVRAM). This process affords precise control of temperature in fabrication of lead zirconate titanate (PZT) ferroelectric thin films on large area aluminized silicon wafers. Commercial applications of the technology included VLSIC manufacture and production of FVNRAMs, surface acoustic wave filters, high speed packages, piezoelectric transducers, pyroelectric sensors, and electronic and electro-optic devices.

• Program Officer

  Ritchie B. Coryell

• Min Amd Letter Date

  1/31/1995 - 30 years ago

• Max Amd Letter Date

  5/21/1996 - 28 years ago

• ARRA Amount

• Name

  American Research Corporation of Virginia

• City

  Radford

• State

  VA

• Country

  United States

• Address

  PO Box 3406

• Postal Code

  241433406

• Phone Number

  5407310655

• First Name

  Usha

• Last Name

  Varshney

• Email Address

  arcova@bev.net

• Start Date

  1/31/1995 12:00:00 AM