NSF Award
9261423
Present manufacturing technologies for non-volatile ferroelectric random access memories (FRAM) are not sufficiently developed to ensure reproducible deposition of large area, high oriented polycrystalline PZT (Lead-Zirconate-Titanate) thin films on substrates compatible with semiconductor integrated technology. In order to address problems of large area stoichiometry and compatibility with thermally sensitive semiconductor substrates used in very large scale integrated circuit (VLSIC) fabrication, the researcher suggests laser crystallization of spin-on ferroelectric thin films for radiation-hard memories. The project is innovative in the precise control of temperature distribution afforded by laser crystallization. The program objectives include the evaluation of spin-on deposition and pre-anneal conditions, identification of laser crystallization parameters, characterization of PZT ferroelectric thin films and integration of films into parallel plate capacitor configurations. The significance of laser crystallization of spin-on ferroelectric thin films lies in minimizing the thermal budget, interdiffusion of substrates/electrodes/film, phase segregation and in increasing compatibility with thermally sensitive semiconductor substrates. Further advantage lies in the use of standard aluminum metallization technology in VLSIC manufacturing currently limited to FRAM applications due to high temperature diffusion problems. Successful completion of this research will result in the fabrication of cost-effective non-volatile random access memories having improved quality, reliability and performance.
