Laser diode and method of manufacturing the same

Abstract

A laser capable of improving surge withstand voltage by preventing damage to a read end surface, and a method of manufacturing the same are provided. A laser diode includes a laser resonator between a first end surface as a main emmission end surface and a second end surface facing the first end surface, and the laser diode includes a light absorption inhibition region on the second end surface side of the laser resonator.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view of a laser diode according to an embodiment of the invention;

FIG. 2 is a plan view of the laser diode shown in FIG. 1 when viewed from a stripe-shaped portion side;

FIG. 3 is a plan view showing a modification of the laser diode shown in FIG. 2;

FIG. 4 is a plan view for describing a method of manufacturing the laser diode shown in FIG. 1;

FIG. 5 is a plan view for showing a modification of FIG. 4;

FIG. 6 is a plan view for describing a manufacturing step following a step shown in FIG. 4;

FIG. 7 is a plan view for describing a manufacturing step following the step shown in FIG. 6; and

FIG. 8 is a plan view for showing a modification of FIG. 7.

Claims

1. A laser diode including a laser resonator between a first end surface as a main emission end surface and a second end surface facing the first end surface, the laser diode comprising: a light absorption inhibition region on the second end surface side of the laser resonator.

2. The laser diode according to claim 1, further comprising: a gap between the second end surface and the light absorption inhibition region.

3. The laser diode according to claim 1, wherein the light absorption inhibition region is an impurity-doped region.

4. The laser diode according to claim 1, further comprising: a mirror film on each of the first end surface and the second end surface.

5. The laser diode according to claim 4, wherein the mirror film on the second end surface includes a-Si.

6. A method of manufacturing a laser diode, the laser diode including a laser resonator between a first end surface as a main emission end surface and a second end surface facing the first end surface, the method comprising the steps of: forming a semiconductor layer including a plurality of planned laser resonator regions;forming a light absorption inhibition region in the semiconductor layer along a position where the second end surface is planned to be formed; andforming the first end surface and the second end surface so that the light absorption inhibition region is disposed on the second end surface side of the laser resonator.

7. The method of manufacturing a laser diode according to claim 6, wherein a gap is arranged between the second end surface and the light absorption inhibition region.

8. The method of manufacturing a laser diode according to claim 6, wherein an impurity-doped region is formed as the light absorption inhibition region.

9. The method of manufacturing a laser diode according to claim 6, further comprising the step of: forming a mirror film on each of the first end surface and the second end surface.

10. The method of manufacturing a laser diode according to claim 9, wherein the mirror film on the second end surface includes a-Si.