Claims
- 1. A method of forming relieved structures comprising:
- forming a mask of material for reflecting a laser beam, said mask comprising a metallic layer sandwiched between first and second organic layers;
- establishing a pattern in said first organic layer to protect said metallic layer;
- removing portions of said metallic layer not protected by said pattern;
- bonding said mask to a substrate to form a masked array;
- scanning said masked array with a laser beam which vaporizes portions of said first and second organic layers not protected by said metallic layer, said laser beam being controlled such that said substrate is vaporized to a desired depth in order to maintain a relieved structure in said substrate as defined by said mask.
- 2. The method recited in claim 1 wherein:
- said first organic layer is a photo-resist material and said establishing step includes exposing and developing said photo-resist material to provide said pattern; and
- said removing step includes etching said metallic layer to dissolve portions thereof not protected by said pattern.
- 3. The method recited in claim 2 including the step of;
- removing said mask from said substrate after the scanning step to provide a relieved structure formed exclusively from said substrate.
- 4. The method recited in claim 2 wherein;
- said bonding step includes providing an adhesive layer between said second organic layer and said substrate, said scanning step vaporizing portions of said adhesive not protected by said metallic layer.
- 5. The method recited in claim 2 wherein;
- said bonding step includes providing an adhesive layer between said first organic layer and said substrate, said scanning step vaporizing portions of said adhesive not protected by said metallic layer.
- 6. The method recited in claim 4 including the step of removing said first organic layer prior to the bonding step.
- 7. A method of forming relieved structures comprising:
- forming a mask of material for reflecting a laser beam, said mask comprising an organic photo-resist first layer over a metallic second layer, said metallic second layer being bonded to an organic third layer;
- exposing and developing said photo-resist layer to provide a preselected protective pattern on said metallic layer;
- etching said metallic layer to dissolve portions thereof not protected by said protective pattern;
- bonding said third layer of said mask to a substrate to form a masked array;
- scanning said masked array with a laser beam which vaporizes exposed portions of said protective pattern and said organic third layer, and is reflected by said metallic layer, said laser beam being controlled such that said substrate is vaporized only to a desired depth in order to maintain a relieved structure in said substrate as defined by said mask.
- 8. The method recited in claim 7 wherein:
- said bonding step is achieved by providing an adhesive layer between said third layer and said substrate, said scanning step vaporizing portions of said adhesive not protected by said metallic layer.
Parent Case Info
This is a continuation, of application Ser. No. 745,856 filed Nov. 29, 1976, now abandoned.
US Referenced Citations (6)
Continuations (1)
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Number |
Date |
Country |
Parent |
745856 |
Nov 1976 |
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