Claims
- 1. A method of placing symbolization on semiconductor devices, comprising the steps of:
- coating an area to be symbolized with an oxide material;
- exposing a portion of the oxide material in a desired pattern with a low power Laser beam in the range of 75 kilowatts; and
- exposing the portion of the oxide material for a period sufficient to change a reflectivity of the portion of the oxide material without burning through the portion of the oxide material.
- 2. The method according to claim 1, further comprising penetrating a plastic coating with the Laser beam to symbolize the area.
- 3. The method according to claim 1, wherein the area to be symbolized is metal.
- 4. The method according to claim 3, wherein the metal is copper.
- 5. A method for placing symbolization on a semiconductor device package, comprising the steps of:
- oxide coating a surface of the package;
- tracing a desired pattern on the oxide coating with a laser beam in the range of 75 kilowatts; and
- maintaining the beam on the oxide coating for a time sufficient to change a reflectivity of the oxide coating without burning through the oxide coating.
- 6. The method according to claim 5, wherein the surface of the package is copper and the oxide coating is cupric oxide.
- 7. The method according to claim 5, further comprising the step of penetrating a plastic coating with the laser beam to expose the oxide coating.
Parent Case Info
This application is a Continuation of application Ser. No. 08/198,693, filed Feb. 18, 1994 now abandoned.
US Referenced Citations (5)
Continuations (1)
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Number |
Date |
Country |
Parent |
198693 |
Feb 1994 |
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