1. Field of the Invention
The present invention relates to multimode laser systems and to such systems deployed in workstations used in manufacturing.
2. Description of Related Art
Lasers have been used to perform trimming processes on workpieces to remove extra materials. Lasers have also been used to perform welding processes to attach two interfaces together. Unfortunately, the laser that trims materials effectively usually has shorter pulse width, which does not weld efficiently. To perform welding processes, the laser pulse width is preferred to be long to avoid laser ablation. Johnson et al., U.S. Pat. No. 4,930,901 proposes modulating a laser beam to control the magnitude of a spike in power caused by Q-switching, in order to apply different peak powers for a “lead bonding mode” and a “lead severing mode.” In both modes however, a leading spike in energy causes removal of material. Leong et al., U.S. Pat. No. 5,611,946 describes a multi-wavelength system adaptable for multiple uses in manufacturing.
For a laser system to perform both processes which avoid removal of material, and processes with ablate material effectively, two lasers have been required in prior art systems. This arrangement needs a more complicated optical system to integrate two sets of laser beam delivery optics together. The complex optics could create reliability issues. Furthermore, a two laser system could be bulkier and more costly to build.
It is desirable to provide a manufacturing method using a single multimode laser, and a laser which can be operated in multiple modes and adapted for use in a workstation for laser repair operations.
The present invention provides a method for manufacturing applied to workpieces, such as large flat-panel liquid crystal displays (LCDs) and the like. These workpieces suffer a variety of defects during manufacture which can be repaired using pulsed laser light adapted for repair of the particular defect. The method includes identifying and classifying targets on the workpiece, mounting workpiece on a stage, and controlling a laser to generate pulses of light on a single beam line, where the pulses are adapted to the classification of the target. The laser includes a first pulse mode and a second pulse mode, where the pulses in the first pulse mode had a first pulse width and peak energy, and in the second pulse mode had a second pulse width and peak energy which are adapted to particular operations on the target. The pulses of light are delivered in both of the first and second modes on a single beam line through an optical system to the targets on the workpiece.
For an embodiment described herein, the first pulse mode comprises a Q-switched mode producing narrow pulse width and high peak energies, and the second pulse mode comprises a non Q-switched mode, producing a broader pulse width based on the application of pump energy to the gain medium, with relatively lower peak energies. The method includes controlling a laser to operate in the Q-switched and non Q-switched modes.
Embodiments are described that apply an optical system including a nonlinear optic causing harmonic generation, and optical elements for selecting an output wavelength from among the fundamental wavelength and harmonic wavelength. The controlling step of the manufacturing process includes operating a mechanism controlling the optical elements to select output wavelength, in addition to the selection of the first and second pulse modes.
In a method for manufacturing as described herein, a magnified image of the target taken along the single beam line, on which the pulses of laser light are delivered to the target, is displayed on a computer terminal.
Technology is described herein for displaying magnified images of spots on the workpiece on a computer workstation, and providing a graphical interface for positioning the spots on the targets, selecting the first pulse mode and the second pulse mode, selecting an output wavelength, selecting a pulse repetition rate, selecting a number of pulses, and for causing delivery of the pulses to the spots.
A laser system and workstation employing the laser system are described as well. The laser system includes a laser that supplies an output beam. The laser has a resonant cavity comprising a gain medium and a Q-switch. A pump energy source is coupled to the gain medium and a Q-switch controller is coupled to the Q-switch. The Q-switch which is switched between a relatively lossy state and a relatively lossless state with controlled timing relative to operation of the pump energy source, in order to induce the first pulse mode and a second pulse mode as described above. An optical system is included with the laser system that delivers the output beam on a single beam line to a target on a workpiece. Embodiments of the optical system including non-linear optic, and optics for selecting an output wavelength. In addition, embodiments of the optical system include a microscope, wherein the single beam line is directed through the microscope to the target. A camera is arranged to generate a magnified image of the target via the single beam line through the optical system. The laser system is deployed with the controller and a computer to form a workstation used in the manufacture of workpieces, like semiconductor wafers and flat panel displays.
Other aspects and advantages of the present invention can be seen on review of the drawings, the detailed description and the claims, which follow.
A detailed description of embodiments of the present invention is provided with reference to the
The laser shown in
A layout of the optical design of the laser system in the preferred embodiment is described in
The output of the laser 100 is supplied along beam path 105 through a first non-linear crystal 106 for generating the second harmonic of the fundamental output wavelength of the laser 100. In the preferred system, this non-linear crystal is KTP aligned for frequency doubling the 1064 nanometer line of the Nd:YAG laser. Next in the beam path 105 is a high reflecting mirror 107 for the fundamental and second harmonic wavelengths. The mirror 107 directs the beam path 105 at a 90 degree angle through a polarizer 108 to repolarize the fundamental wavelength of the laser 100. The fundamental wavelength is repolarized after the non-linear crystal 106 for more efficient attenuation. The repolarized fundamental frequency and frequency doubled component are then passed along the beam path 105 through a second non-linear crystal 109. The second nonlinear crystal 109, in the preferred system, is used for generating the third harmonic and the fourth harmonic of the fundamental wavelength. In this embodiment, it consists of beta barium borate BBO aligned for either the third or fourth harmonic generation. Other nonlinear crystals may be used as known in the art. In alternative systems, nonlinear elements can be placed intra-cavity.
The fundamental, the second harmonic, and the third or fourth harmonics are then passed along the beam path 110 to a high reflector 111, which is high reflecting at the fundamental wavelength, the second harmonic, the third harmonic, and the fourth harmonic. The high reflector 111 turns the beam 90 degrees through a variable attenuator 112.
The variable attenuator 112 consists of a multiple wavelength wave plate 113 and a calcite polarizer 114. The relative angular position of these two devices is controlled using a mechanism 115 known in the art so as to control attenuation of the laser beam on path 105.
The multiple wavelength wave plate operable at each of the four wavelengths identified must have an optical thickness which is near an odd number of one-half wavelengths of all of the wavelengths of interest. An optical grade crystalline quartz plate having a physical thickness of near 0.77901 millimeters, provides about 180 degrees relative phase retardation of the e- and o- waves for each of the fundamental, the second harmonic, the third harmonic and the fourth harmonic (1064, 532, 355, 266 nm). This corresponds with the 63rd order half-wave at the 266 nanometers of the fourth harmonic. Although the relative phase retardation is not precisely half-wave for all four wavelengths, it is close enough that when combined with a polarizer, an attenuator is formed which is effective at all four. In an embodiment, the attenuator transmission when open is about 100% for the fourth harmonic, about 99.4% for the third harmonic, about 98.6% for the second harmonic and about 89.3% for the fundamental. Other thicknesses for the half-wave plate can be used to achieve similar results, but this is preferred because of the higher transmission in lower power wavelengths of the second, third and fourth harmonics. For instance, a thickness of about 0.0865 millimeters is about 100% transmissive at 266, 89% at 355, 100% at 532 and 62% at 1064. A thickness of about 0.3091 millimeters is about 100% transmissive at 266, 98% at 355, 77% at 532 and 99% at 1064. A thickness of about 0.5564 millimeters is about 100% transmissive at 266, 85% at 355, 87% at 532 and 96% at 1064. A thickness of about 0.9274 millimeters is about 100% transmissive at the fifth harmonic (213 nanometers), about 100% transmissive at 266, 85% at 355 and 88% at 1064, although it is not transmissive at the second harmonic. For single plate half-wave plates, it is desirable to keep the thickness below about 1 millimeter to avoid incurring thermal problems associated with thicker plates.
The attenuated beam is supplied on path 105 out of the variable attenuator 112 through a switchable filter mechanism 116. The switchable filter mechanism mounts a plurality of filters used for selecting the output wavelength of the system. By moving one of the plurality of wavelength selective filters into the beam path, the output wavelength is selected.
The non-linear crystals 109 for generating the third or fourth harmonic cause walkoff of the harmonic wavelengths, so that they are separated from the beam path 105 by an amount of about one-half of a millimeter. This walkoff is critical for the microscope mounted laser system where the output beam must proceed along the same beam line for all the selected wavelengths into the field of view of the microscope.
By tilting filter 117 which is used to select the third or fourth harmonic wavelengths, this walkoff is corrected. Thus, the third or fourth harmonic wavelengths, and the other wavelengths are supplied along the beam path 105 in alignment, independent of which wavelength is selected. In an alternative system one could tilt the filter for the fundamental or second harmonic to realign the beam with the third or fourth harmonic.
The non-linear crystal 106 aligned for second harmonic generation causes negligible walkoff. Thus, the non-linear crystal 109 is primarily responsible for the walkoff which must be corrected by the switchable optics 116, using tilted colored glass filters which select for the desired output.
Next in the beam path 105 is telescope 118. This telescope is used to expand the beam about three times from about a 3 millimeter cross-section to about a 9 millimeter cross-section. This allows for matching the cross-section of the beam with the controllable X-Y aperture 120 described below. After the telescope 118, the beam is supplied along the path 105 to a high reflector 119, which is reflective of the four selectable output wavelengths. The beam is turned at reflector 119 by 90 degrees to reflector 150. Reflector 150 is reflective at the harmonic wavelengths, and at the second, third, and fourth harmonics of the harmonic wavelengths. Also, it is transmissive at 600 nanometers and above in the embodiment described so that visible light is transmitted from a white light source 151 into the beam line such as a 150 watt white lamp, to act as an aiming beam or a spot marker.
The reflector 150 turns the beam path through an X-Y aperture 120 which is used to form a square or rectangular cross-section for the beam being delivered to the microscope.
The beam passes from X-Y aperture 120 to beam splitter 121. The beam splitter 121 is 50% or more transmissive at all of the four wavelengths selectable by the output system. The output of the laser system is then supplied on the beam line 122 into the microscope optics and on a line perpendicular to the drawing in
The laser layout illustrated in
The variable attenuator 112 and the switchable optics 116 are especially designed to overcome the problems associated with multi-wavelength laser systems which must supply controlled attenuation outputs, on a single beam line with the exacting standards.
Because the optics, including attenuator 112, and high reflectors 111, 119 and 150, work for all four possible wavelengths, the laser system of
In operation, the computer 154 executes a procedure to locate and classify defects on the workpiece 150, and provides the information gathered to computer 165. The computer 165 controls the stage movement, imaging by the camera and laser firing to perform repair and manufacturing operations on the panel. The output of the laser is configured to execute a recipe according to the classification of the defects being repaired, including selecting the long pulse and short pulse modes, selecting the output wavelength, and other parameters.
Because of the small size of the traces and pixels and large physical size of an LCD panel, the failure rate for LCD display manufacturing has been relatively high. In order to improve the manufacturing yield for LCD panels, manufacturers have been fixing defects in LCD panels, rather than discarding them. The typical process includes passing all LCD panels three test machine to find the location and classification of defects. The system computer records all the locations and classifications of the defects, and provides the information to the repair machine. The system integrators store commonly used settings, including energy level, long pulse or short pulse mode, wavelength, number of pulses, pulse repetition rate, and aperture size, that are applied for performing certain operations on the defects needed to correct them. The recipes are configured according to the classification of the defect. Many types of repairs can be automatically executed using a computer system and a single laser system as described herein.
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While the present invention is disclosed by reference to the preferred embodiments and examples detailed above, it is to be understood that these examples are intended in an illustrative rather than in a limiting sense. It is contemplated that modifications and combinations will readily occur to those skilled in the art, which modifications and combinations will be within the spirit of the invention and the scope of the following claims.
The present application claims the benefit of Provisional U.S. Patent Application No. 60/694,010, entitled SWITCHABLE LONG PULSE/SHORT PULSE LASER, filed 24 Jun. 2005, invented by Chang et al.
Number | Date | Country | |
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60694010 | Jun 2005 | US |