Lateral Epitaxial Overgrowth of Galium Arsenide on Dielectrics for High Performance Electronic Devices

Information

• NSF Award
• 8960608

Owner

• Kopin Corporation

• Award Id

  8960608

• Award Effective Date

  1/1/1990 - 35 years ago

• Award Expiration Date

  9/30/1990 - 34 years ago

• Award Amount

  $ 49,843.00

• Award Instrument

  Standard Grant

This research addresses the need for improved electronic devices formed from galium arsenide. The specific innovation comprises the formation of homoepitaxial galium arsenide on insulators by the lateral overgrowth process,and the fabrication of devices from such layers. The use of an insulator beneath an active layer will yield improved performance, as well as enhance resistance to radiation. The performance improvements derive from the decoupling of adjacent monolithic devices as well as a degree of decoupling from the substrate wafer. This research will determine the feasibility of the necessary lateral growth to evaluate the feasibility of applying organometalic chemical vapor deposition to device fabrication on the laterally overgrown films.

• Program Officer

  Darryl G. Gorman

• Min Amd Letter Date

  12/11/1989 - 35 years ago

• Max Amd Letter Date

  12/11/1989 - 35 years ago

• ARRA Amount

• Name

  Kopin Corporation

• City

  TAUNTON

• State

  MA

• Country

  United States

• Address

  200 JOHN HANCOCK RD

• Postal Code

  027800733

• Phone Number

  5088246696

• First Name

  Jack

• Last Name

  Salerno

• Start Date

  1/1/1990 12:00:00 AM

• Name

  Materials Research

• Code

  106000