Claims
- 1. A cell, having an outside boundary, disposed on the major surface of a semiconductor substrate comprising:
a substantially rectangular inductor region, characterized by a lateral dimension, DL, and having oppositely disposed inside and outside boundaries; a substantially rectangular resistor region, characterized by a lateral dimension, DR, where DR is substantially smaller than DL, having oppositely disposed inside and outside boundaries; a substantially rectangular transistor region, characterized by a lateral dimension, DT, where DT is substantially smaller than DL, having oppositely disposed inside and outside boundaries; a first set of conductive lines, of length ICA, coupling the inductor region to the resistor region; a second set of conductive lines, of length ICB, coupling the resistor region to the transistor region where ICB is substantially smaller than ICA so that the inductor region is isolated and the parasitic inductance of the second set of interconnect lines is low.
CROSS-REFERENCES TO RELATED APPLICATIONS
[0001] This application is a continuation of U.S. patent application Ser. No. 09/861,143 filed May 17, 2001 which is related to U.S. patent application Ser. No. 09/610,905, filed Jul. 6, 2000, entitled CURRENT-CONTROLLED CMOS CIRCUITS WITH INDUCTIVE BROADBAND, the disclosures of which are hereby incorporated by reference herein.
Continuations (1)
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Number |
Date |
Country |
Parent |
09861143 |
May 2001 |
US |
Child |
10847832 |
May 2004 |
US |