The present disclosure pertains generally to flame sensing circuits and more particularly to leakage detection for flame sensing circuits.
Flame sensing systems are widely used to detect flames in combustion systems, often using flame-sensing rods or the like. In many instances, when no flame is detected, the fuel to the combustion system is turned off to help prevent un-burned fuel from being released in the combustion system. In many instances, flame sensing systems rely on the detection of flame sense signals produced by a flame-sensing rod or the like that is exposed to the flame. The flame sense signals can be small and in some cases rivaled by parasitic leakage currents. When this occurs, there is a danger that the parasitic leakage currents may be misinterpreted as a flame sense signal, which may result in the flame sensing system falsely reporting a flame when no flame is actually present. What would be desirable is an improved flame sensing system that can reliably detect such leakage currents to help improve the accuracy and reliability of a flame sensing system.
The disclosure pertains to flame sensing circuits and more particularly to leakage detection for flame sensing circuits. A particular example of the disclosure is found in a flame detection system that includes a flame sensor for sensing a flame, where the flame sensor may draw a flame sense current when a flame is present. An amplifier may be operatively coupled to the flame sensor for amplifying the flame sense current and for drawing an amplified flame sense current from an amplifier output. A detection circuit may be operatively coupled to the amplifier output for detecting the amplified flame sense current.
The detection circuit may include a capacitor having a first end operatively coupled to the amplifier output and a first resistor having a first end operatively coupled to the amplifier output. The first resistor may have a first resistance value. A second resistor may have a first end operatively coupled to the amplifier output and the second resistor may have a second resistance value that is different from the first resistance value.
A microcontroller may be operatively coupled to a second end of the first resistor and a second end of the second resistor and the first end of the capacitor. The microcontroller may be configured to charge the capacitor through the first resistor from a first lower threshold voltage to a first upper threshold voltage, and then allow the amplified flame sense current to discharge the capacitor down to the first lower threshold voltage. The microcontroller may determine a first duty cycle for charging and discharging of the capacitor through the first resistor. The microcontroller may also charge the capacitor through the second resistor from a second lower threshold voltage to a second upper threshold voltage. Then the microcontroller may allow the amplified flame sense current to discharge the capacitor down to the second lower threshold voltage. Further, the microcontroller may determine a second duty cycle of the charging and discharging of the capacitor through the second resistor. The microcontroller may determine a leakage current condition in the flame detection system based at least in part on the first duty cycle, the second duty cycle, the first resistance value and the second resistance value. The microcontroller may also provide a shutdown signal to shut down the flame (e.g. close a gas valve that supplies fuel to the combustion system) when the leakage current condition is determined.
Another example of the disclosure is method for detecting a leakage current condition in a flame detection system. The method may include amplifying with an amplifier a flame sense current provided by a flame sensor, resulting in an amplified flame sense current. The method may supply the amplified flame sense current to the amplifier via charge storage device and charge the charge storage device with a first charging circuit that produces a first charging rate. The method further may include subsequently charging the charge storage device with a second charging circuit that produces a second charging rate, wherein the second charging rate may be different from the first charging rate. The method may determine a leakage current condition in the flame detection system based at least in part on a comparison of the charging of the charge storage device with the first charging circuit and the charging of the charge storage device with the second charging circuit. The microcontroller may also provide a shutdown signal to shut down the flame (e.g. close a gas valve that supplies fuel to the combustion system) when the leakage current condition is determined.
Another example of the disclosure is a flame detection system that includes a flame sensor for sensing a flame. The flame sensor may draw a flame sense current when a flame is present. An amplifier may be operatively coupled to the flame sensor for amplifying the flame sense current and drawing an amplified flame sense current from an amplifier output. A negative voltage supply generator may supply a negative supply voltage to the amplifier. A detection circuit may be operatively coupled to the amplifier output for detecting the amplified flame sense current. A microcontroller may be operatively coupled to the negative voltage supply generator and the detection circuit. The microcontroller may be configured to change the negative supply voltage from a nominal negative supply voltage to a boosted negative supply voltage. The microcontroller may also determine a leakage current condition in the flame detection system when the amplified flame sense current detected by the detection circuit changes by more than a threshold amount when the negative supply voltage is changed from the nominal negative supply voltage to the boosted negative supply voltage and provide a shutdown signal to shut down the flame when the leakage current condition is determined.
The disclosure may be more completely understood in consideration of the following description of various illustrative embodiments of the disclosure in connection with the accompanying drawings, in which:
While the disclosure is amenable to various modifications and alternative forms, specifics thereof have been shown by way of example in the drawings and will be described in detail. It should be understood, however, that the intention is not to limit aspects of the disclosure to the particular illustrative embodiments described. On the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the disclosure.
The following description should be read with reference to the drawings wherein like reference numerals indicate like elements. The drawings, which are not necessarily to scale, are not intended to limit the scope of the disclosure. In some of the Figures, elements not believed necessary to an understanding of relationships among illustrated components may have been omitted for clarity.
All numbers are herein assumed to be modified by the term “about”, unless the content clearly dictates otherwise. The recitation of numerical ranges by endpoints includes all numbers subsumed within that range (e.g., 1 to 5 includes 1, 1.5, 2, 2.75, 3, 3.80, 4, and 5).
As used in this specification and the appended claims, the singular forms “a”, “an”, and “the” include the plural referents unless the content clearly dictates otherwise. As used in this specification and the appended claims, the term “or” is generally employed in its sense including “and/or” unless the content clearly dictates otherwise.
It is noted that references in the specification to “an embodiment”, “some embodiments”, “other embodiments”, etc., indicate that the embodiment described may include a particular feature, structure, or characteristic, but every embodiment may not necessarily include the particular feature, structure, or characteristic. Moreover, such phrases are not necessarily referring to the same embodiment. Further, when a particular feature, structure, or characteristic is described in connection with an embodiment, it is contemplated that the feature, structure, or characteristic may be applied to other embodiments whether or not explicitly described unless clearly stated to the contrary.
The present system and approach may incorporate one or more processors, computers, controllers, user interfaces, wireless and/or wire connections, and/or the like, in an implementation described and/or shown herein. This description may provide one or more illustrative and specific examples or ways of implementing the present system and approach. There may be numerous other examples or ways of implementing the system and approach.
Referring to
The flame detection circuit 101 may be operatively coupled to the flame amplifier 115 output 120 for detecting the amplified flame sense current Iflame. In the example shown, the flame detection circuit 101 may include a capacitor 102 having a first end operatively coupled to the amplifier output 120 at node 21. The capacitor 102 may have any suitable capacitance value. In the example shown, the capacitor 102 has a value of 100 nF and is discharged by Iflame being pulled into amplifier output 120 (a negative amplified flame current). A voltage at the capacitor 102 shown as Vflame on node 21 may be controlled to stay within a defined voltage range such as −50 mV to 50 mV, although this is just an example. The flame detection circuit 101 may also include a first resistor 104 (R1) that is operatively connected between node 21 and a first pin (FB1) of the microcontroller 110. The first resistor 104 may have a first resistance value such as 82.5 kohms, for example. The flame detection circuit 101 may also include a second resistor 105 (R2) that is operatively connected between node 21 and a second pin (FB2) of the microcontroller 110. The second resistor 105 may have a second resistance value, such as 120 kohms. The first resistor 104, the second resistor 105, the capacitor 102 and the voltage follower amplifier 106 may be considered as collectively forming flame detection circuit 101. The voltage follower amplifier 106 may amplify the Vflame signal on node 21 and provide an amplified Vflame signal to an inverting amplifier 122, which may further amplify the amplified Vflame before being provided to an input pin of the microcontroller 110. The input put of the microcontroller may be connected to an A/D converter to convert the analog flame sense signal to a digital flame sense signal suitable for processing by the microcontroller 110. In the example shown, the microcontroller 110 may provide a baseline value to the “+” input of the operational amplifier 108 of the inverting amplifier 122 as shown. The baseline value may provide a zero point on which to compare and amplify the amplified Vflame signal provided by the flame detection circuit 101. In some cases, the baseline value may be ground, but it is contemplated that the baseline value may be any suitable value.
During operation, the microcontroller 110 may be configured to periodically assert the FB1 pin 117 to VCC 112 and switch FB2 pin 103 to a tri-state (e.g. floating) in order to charge the capacitor 102 through the first resistor 104 from a first lower threshold voltage (e.g. −50 mv) to a first upper threshold voltage (e.g. +50 mv), and then allow the amplified flame sense current Iflame, to discharge the capacitor 102 back down to the first lower threshold voltage (e.g. −50 mv). The microcontroller 110 may determine a first duty cycle D1 of the charging of the capacitor 102 through the first resistor 104 and subsequent discharging of the capacitor 102.
The microcontroller 110 may also periodically assert the FB2 pin 103 to VCC 112 and switch FB1 pin 117 to a tri-state in order charge the capacitor 102 through the second resistor 105 from a second lower threshold voltage (e.g. −50 mv) to a second upper threshold voltage (+50 mv) and then allow the amplified flame sense current Iflame to discharge the capacitor 102 back down to the second lower threshold voltage (−50 mv). The microcontroller may determine a second duty cycle D2 of the charging of the capacitor 102 through the second resistor 105 and subsequent discharge of the capacitor 102. In some cases, the first lower threshold voltage may be the same as the second lower threshold voltage, and the a first upper threshold voltage may the same as the a second upper threshold voltage, but this is not required.
The microcontroller 110 may be configured to determine a leakage current condition in the flame detection system 100 based at least in part on the first duty cycle D1, the second duty cycle D2, the first resistance value R1 and the second resistance value R2, as further described below. The microcontroller 110 may provide a shutdown signal to shut down the flame (e.g. close a gas valve supplying fuel to the combustion system) when the leakage current condition is determined.
More specifically, the microcontroller 110 may be configured to determine the first duty cycle D1 by asserting the FB1 pin 117 to VCC 112 and switch FB2 pin 103 to a tri-state (e.g. floating), and then monitoring a voltage at node 21 at the first end of the capacitor 102 and clocking how long it takes to charge the capacitor 102 through the first resistor 104 from the first lower threshold voltage (i.e. −50 mV) to the first upper threshold voltage (ChargeR1Time). The microcontroller 110 may then switch the FB1 pin 117 and the FB2 pin 103 to a tri-state (e.g. floating), and clock how long it takes for the amplified flame sense current Iflame to discharge the capacitor 102 back down to the first lower threshold voltage (DischargeFCTime). DischargeFCTime may denote the flame current Iflame discharge time. The first duty cycle D1 may be calculated by using the relation ChargeR1Time/(ChargeR1Time+DischargeFCTime). The ChargeR1Time and DischargeFCTime may be averaged values taken over a plurality of charging and discharging cycles of the capacitor 102 to help reduce noise in the system.
The microcontroller 110 may also be configured to determine the second duty cycle D2 by asserting the FB2 pin 103 to VCC 112 and switch FB1 pin 112 to a tri-state (e.g. floating), and then monitoring a voltage at node 21 at the first end of the capacitor 102 and clocking how long it takes to charge the capacitor 102 through the second resistor 105 from the second lower threshold voltage (i.e. −50 mV) to the second upper threshold voltage (ChargeR2Time). The microcontroller 110 may then switch the FB2 pin 103 and the FB1 pin 117 to a tri-state (e.g. floating), and clock how long it takes for the amplified flame sense current Iflame to discharge the capacitor 102 back down to the second lower threshold voltage (DischargeFCTime). DischargeFCTime may denote the flame current Iflame discharge time. The second duty cycle D2 may be calculated by using the relation ChargeR2Time/(ChargeR2Time+DischargeFCTime). The ChargeR2Time and DischargeFCTime may be averaged values taken over a plurality of charging and discharging cycles of the capacitor 102 to help reduce noise in the system.
When the first lower threshold voltage is the same as the second lower threshold voltage, and the first upper threshold voltage is same as the a second upper threshold voltage, the DischargeFCTime should be the same absent current leakage. Said another way, the ratio D1/D2 should be the same as the ratio R1/R2 absent current leakage. As such, a current leakage condition may be indicated when the ratio D1/D2 deviates from the ratio R1/R2 by more than a threshold amount.
In some cases, a single charge/discharge cycle may be executed using R1 to determine D1, followed by a single charge/discharge cycle using R2 to determine D2. This may be repeated over time. In some cases, the past “N” D1 values may be averaged to determine an average D1 value, where “N” is a positive integer. Likewise, the past “N” D2 values may be averaged to determine an average D2 value. In some cases, two or more consecutive charge/discharge cycles may be executed using R1 to determine D1, followed by two or more consecutive charge/discharge cycles using R2 to determine D2.
In some cases, the microcontroller 110 may be configured to determine the first duty cycle D1 by asserting the FB1 pin 117 to VCC 112 and switch FB2 pin 103 to a tri-state (e.g. floating), and then monitoring a voltage at node 21 at the first end of the capacitor 102 and clocking how long it takes to charge the capacitor 102 through the first resistor 104 from the first lower threshold voltage (i.e. −50 mV) to the first upper threshold voltage (ChargeR1Time). The microcontroller 110 may then switch the FB1 pin 117 and the FB2 pin 103 to a tri-state (e.g. floating), and clock how long it takes for the amplified flame sense current Iflame to discharge the capacitor 102 back down to the first lower threshold voltage (DischargeFCTime). The microcontroller 110 may determine the second duty cycle D2 by asserting the FB2 pin 103 to VCC 112 and the FB1 pin 112 to VCC 112, and then monitoring a voltage at node 21 at the first end of the capacitor 102 and clocking how long it takes to charge the capacitor 102 through the first resistor 104 and the second resistor 105 from the second lower threshold voltage (i.e. −50 mV) to the second upper threshold voltage (ChargeR1R2Time). The microcontroller 110 may then switch the FB2 pin 103 and the FB1 pin 117 to a tri-state (e.g. floating), and clock how long it takes for the amplified flame sense current Iflame to discharge the capacitor 102 back down to the second lower threshold voltage (DischargeFCTime). In this example, R1 is used to determine the first duty cycle, while the parallel resistance of R1 and R2 is used to determine the second duty cycle.
In some cases, a negative voltage supply generator 118 may supply a negative supply voltage (Vee). This may be useful because the flame sensor 116 may draw a negative current, which produce a negative voltage. The negative supply voltage (Vee) may be provided to the flame amplifier 115, and in some cases the amplifier 106, the amplifier 108 and/or the microcontroller 110. In some cases, the microcontroller 110 may be configured to periodically change the negative supply voltage provided by the negative voltage supply generator 118 from a nominal negative supply voltage (e.g. −800 mv) to a boosted negative supply voltage (−2200 mv), and then back again. If there is no leakage in the flame sensing circuit, the detected flame current Iflame should remain the same regardless of whether the negative supply voltage is set to the nominal negative supply voltage (e.g. −800 mv) or the boosted negative supply voltage (−2200 mv). The microcontroller 110 may determine a leakage current condition when the amplified flame sense current Iflame detected by the detection circuit changes by more than a threshold amount when the negative supply voltage is changed from the nominal negative supply voltage to the boosted negative supply voltage.
In some cases, the microcontroller 110 may be configured to change the negative supply voltage from the nominal negative supply voltage to the boosted negative supply voltage for a period of time (e.g. 200 milliseconds, 300 milliseconds, 500 milliseconds, 1 second, 5 seconds or any other suitable time) before changing the negative supply voltage back from the boosted negative supply voltage to the nominal negative supply voltage. The microcontroller 110 may wait for a period of time (e.g. 1 second, 2 seconds, 5 seconds, 10 seconds, 60 seconds, or any other suitable time) before again changing the negative supply voltage from the nominal negative supply voltage to the boosted negative supply voltage before changing the negative supply voltage back from the boosted negative supply voltage to the nominal negative supply voltage.
In some cases, and as shown in
During use, the microcontroller 110 may track the output signal Vout 113 provided by the inverting amplifier 122 and compare the output signal Vout 113 to two thresholds that correspond to the Vflame thresholds of, for instance, +50 mV and −50 mV at node 21. In some cases, these thresholds correspond to a lower threshold (e.g. the first lower threshold and/or the second lower threshold) and an upper threshold (e.g. the first upper threshold and/or the second upper threshold). The microcontroller 110 may track the output signal Vout 113 and control feedback drive pins FB1 and FB2 accordingly, so that node 21 stays within a desired range such as −50 mV to +50 mV as described herein.
The microcontroller 110 may be configured to determine the first duty cycle D1 by asserting the FB1 pin 117 to VCC 112 as shown at 32 and switch FB2 pin 103 to a tri-state (e.g. floating), and then monitoring a voltage Vflame at node 21 at the first end of the capacitor 102 and clocking how long (ChargeR1Time) it takes to charge the capacitor 102 through the first resistor 104 from the first lower threshold voltage (i.e. −50 mV) to the first upper threshold voltage (i.e. +50 mV), as shown at 24. The microcontroller 110 may then switch the FB1 pin 117 and the FB2 pin 103 to a tri-state (e.g. floating) as shown at 33, and clock how long (DischargeFCTime) it takes for the amplified flame sense current Iflame to discharge the capacitor 102 back down to the first lower threshold voltage (i.e. −50 mV) as shown at 25. DischargeFCTime may denote the flame current Iflame discharge time. The ChargeR1Time plus the DischargeFCTime results in a period P1. The first duty cycle D1 may be calculated by using the relation ChargeR1Time/(ChargeR1Time+DischargeFCTime). In some cases, the ChargeR1Time and DischargeFCTime may be averaged values taken over a plurality of charging and discharging cycles of the capacitor 102 to help reduce noise in the system, but this is not required.
The microcontroller 110 may also be configured to determine the second duty cycle D2 by asserting the FB2 pin 103 to VCC 112 as shown at 34 and switch FB1 pin 112 to a tri-state (e.g. floating), and then monitoring the voltage Vflame at node 21 at the first end of the capacitor 102 and clocking how long (ChargeR2Time) it takes to charge the capacitor 102 through the second resistor 105 from the second lower threshold voltage (i.e. −50 mV) to the second upper threshold voltage (i.e. +50 mV), as shown at 26. In the example shown, the first lower threshold voltage is the same as the second lower threshold voltage (i.e. −50 mV), and the first upper threshold voltage is same as the a second upper threshold voltage (i.e. +50 mV), but this is not required. The microcontroller 110 may then switch the FB2 pin 103 and the FB1 pin 117 to a tri-state (e.g. floating) as shown at 35, and clock how long (DischargeFCTime) it takes for the amplified flame sense current Iflame to discharge the capacitor 102 back down to the second lower threshold voltage (i.e. −50 mV), as shown at 27. The ChargeR2Time plus the DischargeFCTime results in a period P2. The second duty cycle D2 may be calculated by using the relation ChargeR2Time/(ChargeR2Time+DischargeFCTime). In some cases, the ChargeR2Time and DischargeFCTime may be averaged values taken over a plurality of charging and discharging cycles of the capacitor 102 to help reduce noise in the system, but this is not required, but this is not required. The DischargeFCTime should be the same whether the capacitor 102 was charged using R1 or R2 absent current leakage. Said another way, the ratio D1/D2 should be the same as the ratio R1/R2 absent current leakage. As such, a current leakage condition may be indicated when the ratio D1/D2 deviates from the ratio R1/R2 by more than a threshold amount.
In some cases, the microcontroller 110 may be configured to periodically change the negative supply voltage (Vee) provided by the negative voltage supply generator 118 of
In some cases, the microcontroller 110 may be configured to change the negative supply voltage from the nominal negative supply voltage to the boosted negative supply voltage for a period of time (e.g. 200 milliseconds, 300 milliseconds, 500 milliseconds, 1 second, 5 seconds or any other suitable time) before changing the negative supply voltage back from the boosted negative supply voltage to the nominal negative supply voltage. The microcontroller 110 may wait for a period of time (e.g. 1 second, 2 seconds, 5 seconds, 10 seconds, 60 seconds, or any other suitable time) before again changing the negative supply voltage from the nominal negative supply voltage to the boosted negative supply voltage before changing the negative supply voltage back from the boosted negative supply voltage to the nominal negative supply voltage.
The flame sensor 116a may draw a flame sense current when exposed to a flame. The flame amplifier 115a may amplify the flame sense current and draw an amplified flame sense current from an amplifier output. The negative voltage supply generator 118a may supply a negative supply voltage to the flame amplifier 115a as shown. The flame sense detection circuit 101a may detect the amplified sense current.
The microcontroller 110a may be operatively coupled to the negative voltage supply generator 118a and the flame sense detection circuit 101a. The microcontroller 110a may further be configured to change the negative supply voltage provided by the negative voltage supply generator 118a from a nominal negative supply voltage to a boosted negative supply voltage, determine a leakage current condition in the flame detection system when the amplified flame sense current detected by the flame detection circuit 101a changes by more than a threshold amount when the negative supply voltage is changed from the nominal negative supply voltage to the boosted negative supply voltage. The microcontroller 110a may further provide a shutdown signal 107 to shut down the flame (e.g. close a gas valve that supplies fuel to the combustion system) when a leakage current condition is determined.
The microcontroller 110a may be configured to change the negative supply voltage from the nominal negative supply voltage to the boosted negative supply voltage for a period of time (e.g. 200 milliseconds, 300 milliseconds, 500 milliseconds, 1 second, 5 seconds or any other suitable time) before changing the negative supply voltage back from the boosted negative supply voltage to the nominal negative supply voltage. The microcontroller 110a may wait for a period of time (e.g. 1 second, 2 seconds, 5 seconds, 10 seconds, 60 seconds, or any other suitable time) before again changing the negative supply voltage from the nominal negative supply voltage to the boosted negative supply voltage before changing the negative supply voltage back from the boosted negative supply voltage to the nominal negative supply voltage.
The method 500 may optionally include a negative supply voltage that is selectively changed from a nominal negative supply voltage to a boosted negative supply voltage, and a leakage current condition may be determining in the flame detection system when the sensed flame sense current changes by more than a threshold amount, as indicated at block 570.
Those skilled in the art will recognize that the present disclosure may be manifested in a variety of forms other than the specific embodiments described and contemplated herein. Accordingly, departure in form and detail may be made without departing from the scope and spirit of the present disclosure as described in the appended claims.
This application claims the benefit of the filing date of U.S. Provisional Patent Application No. 62/786,181, filed Dec. 28, 2018, the disclosure of which is hereby incorporated by reference.
Number | Name | Date | Kind |
---|---|---|---|
2410524 | Richardson | Nov 1946 | A |
2737643 | Marsden, Jr. | Mar 1956 | A |
3425780 | Potts | Feb 1969 | A |
3520645 | Cotton et al. | Jul 1970 | A |
3589848 | Potts | Jun 1971 | A |
3627458 | Wade | Dec 1971 | A |
3649156 | Conner | Mar 1972 | A |
3681001 | Potts | Aug 1972 | A |
3836857 | Ikegami et al. | Sep 1974 | A |
3870929 | Carlson | Mar 1975 | A |
3909816 | Teeters | Sep 1975 | A |
4035134 | Matthews | Jul 1977 | A |
4157506 | Spencer | Jun 1979 | A |
4221557 | Jalics | Sep 1980 | A |
4242079 | Matthews | Dec 1980 | A |
4269589 | Matthews | May 1981 | A |
4280184 | Weiner et al. | Jul 1981 | A |
4303385 | Rudich et al. | Dec 1981 | A |
4370557 | Axmark et al. | Jan 1983 | A |
4450499 | Sorelle | May 1984 | A |
4457692 | Erdman | Jul 1984 | A |
4483672 | Wallace et al. | Nov 1984 | A |
4521825 | Crawford | Jun 1985 | A |
4527247 | Kaiser et al. | Jul 1985 | A |
4555800 | Nishikawa et al. | Nov 1985 | A |
4622005 | Kuroda | Nov 1986 | A |
4626193 | Gann | Dec 1986 | A |
4655705 | Shute et al. | Apr 1987 | A |
4672324 | van Kampen | Jun 1987 | A |
4695246 | Beilfuss et al. | Sep 1987 | A |
4709155 | Yamaguchi et al. | Nov 1987 | A |
4777607 | Maury et al. | Oct 1988 | A |
4830601 | Dahlander et al. | May 1989 | A |
4842510 | Grunden et al. | Jun 1989 | A |
4843084 | Parker et al. | Jun 1989 | A |
4872828 | Mierzwinski et al. | Oct 1989 | A |
4904986 | Pinckaers | Feb 1990 | A |
4925386 | Donnelly | May 1990 | A |
4949355 | Dyke et al. | Aug 1990 | A |
4955806 | Grunden et al. | Sep 1990 | A |
5026270 | Adams et al. | Jun 1991 | A |
5026272 | Takahashi et al. | Jun 1991 | A |
5037291 | Clark | Aug 1991 | A |
5073769 | Kompelien | Dec 1991 | A |
5077550 | Cormier | Dec 1991 | A |
5112117 | Altmann et al. | May 1992 | A |
5126721 | Butcher et al. | Jun 1992 | A |
5158477 | Testa et al. | Oct 1992 | A |
5175439 | Haerer et al. | Dec 1992 | A |
5222888 | Jones et al. | Jun 1993 | A |
5236328 | Tate et al. | Aug 1993 | A |
5255179 | Zekan et al. | Oct 1993 | A |
5276630 | Baldwin et al. | Jan 1994 | A |
5280802 | Comuzie, Jr. | Jan 1994 | A |
5300836 | Cha | Apr 1994 | A |
5347982 | Binzer et al. | Sep 1994 | A |
5365223 | Sigafus | Nov 1994 | A |
5391074 | Meeker | Feb 1995 | A |
5424554 | Marran et al. | Jun 1995 | A |
5446677 | Jensen et al. | Aug 1995 | A |
5472336 | Adams et al. | Dec 1995 | A |
5506569 | Rowlette | Apr 1996 | A |
5548277 | Wild | Aug 1996 | A |
5567143 | Servidio | Oct 1996 | A |
5599180 | Peters et al. | Feb 1997 | A |
5682329 | Seem et al. | Oct 1997 | A |
5722823 | Hodgkiss | Mar 1998 | A |
5797358 | Brandt et al. | Aug 1998 | A |
5971745 | Bassett et al. | Oct 1999 | A |
6013919 | Schneider et al. | Jan 2000 | A |
6060719 | DiTucci et al. | May 2000 | A |
6071114 | Cusack et al. | Jun 2000 | A |
6084518 | Jamieson | Jul 2000 | A |
6222719 | Kadah | Apr 2001 | B1 |
6261086 | Fu | Jul 2001 | B1 |
6299433 | Gauba et al. | Oct 2001 | B1 |
6346712 | Popovic et al. | Feb 2002 | B1 |
6349156 | O'Brien et al. | Feb 2002 | B1 |
6356827 | Davis et al. | Mar 2002 | B1 |
6385510 | Hoog et al. | May 2002 | B1 |
6457692 | Gohl | Oct 2002 | B1 |
6474979 | Rippelmeyer | Nov 2002 | B1 |
6486486 | Haupenthal | Nov 2002 | B1 |
6509838 | Payne et al. | Jan 2003 | B1 |
6552865 | Cyrusian | Apr 2003 | B2 |
6676404 | Lochschmied | Jan 2004 | B2 |
6743010 | Bridgeman et al. | Jun 2004 | B2 |
6782345 | Siegel et al. | Aug 2004 | B1 |
6794771 | Orloff | Sep 2004 | B2 |
6912671 | Christensen et al. | Jun 2005 | B2 |
6917888 | Logvinov et al. | Jul 2005 | B2 |
6923640 | Canon | Aug 2005 | B2 |
7088137 | Behrendt et al. | Aug 2006 | B2 |
7088253 | Grow | Aug 2006 | B2 |
7202794 | Huseynov et al. | Apr 2007 | B2 |
7241135 | Munsterhuis et al. | Jul 2007 | B2 |
7255284 | Kim et al. | Aug 2007 | B2 |
7255285 | Troost et al. | Aug 2007 | B2 |
7274973 | Nichols et al. | Sep 2007 | B2 |
7289032 | Seguin et al. | Oct 2007 | B2 |
7327269 | Kiarostami | Feb 2008 | B2 |
7460966 | Hattori | Dec 2008 | B1 |
7617691 | Street et al. | Nov 2009 | B2 |
7728736 | Leeland et al. | Jun 2010 | B2 |
7764182 | Chian et al. | Jul 2010 | B2 |
7768410 | Chian | Aug 2010 | B2 |
7800508 | Chian et al. | Sep 2010 | B2 |
7806682 | Cueva | Oct 2010 | B2 |
8066508 | Nordberg et al. | Nov 2011 | B2 |
8085521 | Chian | Dec 2011 | B2 |
8300381 | Chian et al. | Oct 2012 | B2 |
8310801 | McDonald et al. | Nov 2012 | B2 |
8659437 | Chian | Feb 2014 | B2 |
8875557 | Chian et al. | Nov 2014 | B2 |
9784449 | Margolin | Oct 2017 | B2 |
10151492 | Huang et al. | Dec 2018 | B2 |
10215809 | Mills et al. | Feb 2019 | B2 |
10473329 | Vorlicek | Nov 2019 | B2 |
20020099474 | Khesin | Jul 2002 | A1 |
20030222982 | Hamdan et al. | Dec 2003 | A1 |
20040209209 | Chodacki et al. | Oct 2004 | A1 |
20050086341 | Enga et al. | Apr 2005 | A1 |
20050092851 | Troost et al. | May 2005 | A1 |
20060257801 | Chian | Nov 2006 | A1 |
20060257802 | Chian | Nov 2006 | A1 |
20060257804 | Chian et al. | Nov 2006 | A1 |
20060257805 | Nordberg et al. | Nov 2006 | A1 |
20070159978 | Anglin et al. | Jul 2007 | A1 |
20070188971 | Chian et al. | Aug 2007 | A1 |
20070207422 | Cueva | Sep 2007 | A1 |
20080266120 | Leeland et al. | Oct 2008 | A1 |
20090009344 | Chian | Jan 2009 | A1 |
20090136883 | Chian et al. | May 2009 | A1 |
20100013644 | McDonald et al. | Jan 2010 | A1 |
20100265075 | Chian | Oct 2010 | A1 |
20120288806 | Racaj | Nov 2012 | A1 |
20160091204 | Patton et al. | Mar 2016 | A1 |
20160091205 | Solosky et al. | Mar 2016 | A1 |
20160091903 | Patton et al. | Mar 2016 | A1 |
20160092388 | Sorenson et al. | Mar 2016 | A1 |
20160098055 | Solosky et al. | Apr 2016 | A1 |
20160123624 | Solosky | May 2016 | A1 |
20190195493 | Vorlicek | Jun 2019 | A1 |
20200208838 | Vorlicek | Jul 2020 | A1 |
Number | Date | Country |
---|---|---|
0967440 | Dec 1999 | EP |
1148298 | Oct 2004 | EP |
9718417 | May 1997 | WO |
Entry |
---|
Honeywell, “S4965 SERIES Combined Valve and Boiler Control Systems,” 16 pages, prior to Jul. 3, 2007. |
Honeywell, “SV9410/SV9420; SV9510/SV9520; SV9610/SV9620 SmartValve System Controls,” Installation Instructions, 16 pages, 2003. |
www.playhookey.com, “Series LC Circuits,” 5 pages, printed Jun. 15, 2007. |
Number | Date | Country | |
---|---|---|---|
20200208838 A1 | Jul 2020 | US |
Number | Date | Country | |
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62786181 | Dec 2018 | US |