The present invention relates to a lamp set using a solid state light source disposed in a body including a socket.
Semiconductor light-emitting devices including light emitting diodes (LEDs), resonant cavity light emitting diodes (RCLEDs), vertical cavity laser diodes (VCSELs), and edge emitting lasers are among the most efficient light sources currently available. Materials systems currently of interest in the manufacture of high-brightness light emitting devices capable of operation across the visible spectrum include Group III-V semiconductors, particularly binary, ternary, and quaternary alloys of gallium, aluminum, indium, and nitrogen and/or phosphorus. Typically, III-V light emitting devices are fabricated by epitaxially growing a stack of semiconductor layers of different compositions and dopant concentrations on a sapphire, silicon carbide, silicon, III-nitride, GaAs or other suitable substrate by metal-or-ganic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), or other epitaxial techniques. The stack often includes one or more n-type layers doped with, for example, Si, formed over the substrate, one or more light emitting layers in an active region formed over the n-type layer or layers, and one or more p-type layers doped with, for example, Mg, formed over the active region. Electrical contacts are formed on the n- and p-type regions.
LEDs are increasingly being used as lighting sources in automotive applications. For example, LEDs may be used in retrofit bulbs, used to replace conventional filament bulbs.
US20090175044A1 discloses an LED light module where one or more LEDs are mounted, together with further electrical components, on a circuit, all of which are encapsulated in a thermoplastic polymer material which may also form lenses over the LEDs. The encapsulation material provides for heat removal as well as mechanical interfacing to a receptacle for the light module.
It is an object of the invention to provide one or more LED(s) attached to a conductive substrate and disposed in a molded body which includes a socket.
A device according to embodiments of the invention includes a light emitting diode (LED) mounted on an electrically conducting substrate. A lens is disposed over the LED. A body is formed over the electrically conducting substrate and in direct contact with the lens. The body includes a bulb portion and a socket portion formed in a single, integrated structure.
A method according to embodiments of the invention includes attaching a light emitting diode (LED) to an electrically conducting substrate. A body is molded over the LED and the electrically conducting substrate. The body includes a bulb portion and a socket portion formed in a single, integrated structure. A lens disposed over the LED protrudes from the body.
In a light source including LED(s), such as a retrofit bulb for an automotive application, a glass lens is not required. Accordingly, a separate socket is not required to protect the light source, for example from vibration. In embodiments of the invention, the socket portion is included in a body molded around the LED(s).
Though in the examples below the semiconductor light emitting devices are III-nitride LEDs that emit blue or UV light, semiconductor light emitting devices besides LEDs such as laser diodes, semiconductor light emitting devices made from other materials systems such as other III-V materials, III-phosphide, III-arsenide, II-VI materials, ZnO, or Si-based materials, or non-semiconductor light emitting devices may be used.
In embodiments of the invention, a lens is formed over an LED. The LED is mounted on a conductive frame or substrate, then a body is molded around the LED, the lens, and the conductive substrate. The molded body includes a socket, used to electrically connect the LED to a larger system, such as an automobile or automobile lighting system.
The molded body 50 includes both a bulb portion 54 and a socket portion 52, corresponding to the bulb and socket illustrated in
In some applications such as automotive applications, fixtures such as the bulb and socket of
In some embodiments, a molded body including a socket such as the structure of
The LED illustrated in
After growth of the semiconductor structure, a p-contact is formed on the surface of the p-type region. The p-contact 30 often includes multiple conductive layers such as a reflective metal and a guard metal which may prevent or reduce electromigration of the reflective metal. The reflective metal is often silver but any suitable material or materials may be used. After forming the p-contact 30, a portion of the p-contact 30, the p-type region 28, and the active region 26 is removed to expose a portion of the n-type region 24 on which an n-contact 32 is formed. The n- and p-contacts 32 and 30 are electrically isolated from each other by a gap which may be filled with a dielectric 34 such as an oxide of silicon or any other suitable material. Multiple n-contact vias may be formed; the n- and p-contacts 32 and 30 are not limited to the arrangement illustrated in
Thick metal pads 36 and 38 are formed on and electrically connected to the n- and p-contacts. Pad 38 is electrically connected to n-contact 32. Pad 36 is electrically connected to p-contact 30. Pads 36 and 38 are electrically isolated from each other by a gap 40, which may be filled with a dielectric material. Pad 38 is electrically isolated from the p-contact 30 by dielectric 34, which may extend over a portion of the p-contact 30. Pads 36 and 38 may be, for example, gold, copper, alloys, or any other suitable material formed by plating or any other suitable technique. Pads 36 and 38 in some embodiments are sufficiently thick to support the semiconductor structure 22 such that the growth substrate can be removed.
In some embodiments, instead of thick metal pads 36 and 38, the semiconductor structure is attached to a host substrate, which may be, for example, silicon, ceramic, metal, or any other suitable material. In some embodiments, the growth substrate remains attached to the semiconductor structure. The growth substrate may be thinned and/or textured, roughened, or patterned.
Many individual LEDs 10 are formed on a single wafer. In the regions between neighboring LEDs 10, the semiconductor structure is entirely removed by etching down to the substrate, or the semiconductor structure is etched down to an electrically insulating layer. A dielectric material 12 is disposed in the areas between LEDs 10. Material 12 may mechanically support and/or protect the sides of LEDs 10 during later processing, such as dicing. Material 12 may also be formed to prevent or reduce the amount of light from escaping from the sides of LEDs 10.
The growth substrate is then removed from a wafer of LEDs. The growth substrate may be removed by, for example, laser melting, etching, mechanical techniques such as grinding, or any other suitable technique. The semiconductor structure 22 of LEDs 10 may be thinned after removing the growth substrate, and/or the exposed top surface may be roughened, textured, or patterned, for example to improve light extraction from the LEDs 10.
In some embodiments, a wavelength converting layer 20 is connected to the surface of LEDs 10 exposed by removing the growth substrate, or to the growth substrate in devices where the growth substrate remains attached to the semiconductor structure. Wavelength converting layer 20 may be any suitable material formed by any suitable technique. Multiple wavelength converting layers may be used. The wavelength converting material may be conventional phosphors, organic phosphors, quantum dots, organic semiconductors, II-VI or III-V semiconductors, II-VI or III-V semiconductor quantum dots or nanocrystals, dyes, polymers, or other materials that luminesce. In various embodiments, wavelength converting layer 20 may be, for example, one or more powder phosphors mixed with transparent material such as silicone that is dispensed, screen printed, stenciled, or pre-formed then laminated over LED 10, or a pre-formed luminescent ceramic or phosphor dispersed in glass or other transparent material that is glued or bonded to LED 10.
The wavelength converting layer 20 absorbs light emitted by the LEDs and emits light of one or more different wavelengths. Unconverted light emitted by the LEDs is often part of the final spectrum of light extracted from the structure, though it need not be. Examples of common combinations include a blue-emitting LED combined with a yellow-emitting wavelength converting material, a blue-emitting LED combined with green- and red-emitting wavelength converting materials, a UV-emitting LED combined with blue- and yellow-emitting wavelength converting materials, and a UV-emitting LED combined with blue-, green-, and red-emitting wavelength converting materials. Wavelength converting materials emitting other colors of light may be added to tailor the spectrum of light emitted from the structure.
Non-wavelength-converting materials, for example to cause scattering or to alter the index of refraction of the layer, may be added to the wavelength converting layer 20. Examples of suitable materials include silica and TiO2. In some embodiments, no wavelength converting material is used in the device.
Before or after forming the wavelength converting layer 20 or attaching a preformed wavelength converting layer 20 to the LED, a wafer of LEDs may be diced into individual LEDs or groups of LEDs. The LED illustrated in
Wavelength converting layer 20 may be formed over the LED body 25 before or after attaching the LED to a conductive substrate, as described below.
An optical element 42 is disposed over the LED. Optical element 42 is a structure that may alter the pattern of light emitted by the LED. Examples of suitable optical elements include lenses such as dome lenses and Fresnel lenses, and other structures such as optical concentrators. For economy of language, optical element 42 is referred to herein as a lens. Lens 42 may be a pre-formed lens that is glued or otherwise attached to LED body 25, or a lens that is formed over LED body 25, for example by molding. Lens 42 often extends over the sides of LED body 25 as illustrated in
A molded lens 42 may be formed as follows. A mold with an interior shaped as lens 42 is lowered over the LED body 25. The mold may optionally be lined with a non-stick film that prevents the sticking of molding material to the mold. In some embodiments, plasma such as O2 plasma is applied to the top surface of the LED body 25, to improve the adhesion of the molding material to the LED body. The region between the mold and the LED body 25 is filled with a heat-curable liquid molding material. The molding material may be any suitable optically transparent material such as silicone, an epoxy, or a hybrid silicone/epoxy. A hybrid may be used to more closely match the coefficient of thermal expansion (CTE) of the molding material to that of the LED body 25. Silicone and epoxy have a sufficiently high index of refraction (greater than 1.4) to facilitate light extraction from the LED as well as act as a lens. One type of silicone has an index of refraction of 1.76. In some embodiments, a wavelength converting material such as phosphor is dispersed in the molding material. An optical element with dispersed wavelength converting material may be used instead of or in addition to wavelength converting layer 20. A vacuum seal may be created between the LED body 25 and the mold, and the two pieces may be pressed against each other so that the LED is inserted into the liquid molding material and the molding material is under compression. The mold may then be heated, for example to about 150° C. or other suitable temperature for a suitable time to harden the molding material into lens 42. The finished device, as illustrated in
Lenses 42 may be molded over the LEDs in groups, as illustrated in
Lens 42 may be formed over the LED body 25 before or after attaching the LED to a conductive substrate, as described below.
As illustrated in
In the structure illustrated in
One or more optional additional circuit elements 44 may be attached to conductive substrate 18 or to leads 16 within or outside of molded body 50. Additional circuit element 44 may be a non-light-emitting circuit element. Additional circuit element 44 may be, for example, an electrostatic discharge protection circuit, power conditioning circuitry, driver circuitry, control circuitry, a leaded resistor, a leaded diode, or any other suitable circuit element. Leaded resistors and diodes are standard discrete circuit elements with leads (long wires) on both ends. These devices can be conveniently connected to the conducting substrate 18 or to leads 16 with techniques such as soldering, laser welding and resistance welding. Leaded components are used when removing the heat source, for example the resistor body, from the temperature sensitive circuit elements, for example the LEDs, is desired. The additional circuit element 44 may be totally encased within the molded body 50, or all or a portion of additional circuit element 44 may protrude from the molded body 50.
Molded body 50 may be any suitable material including, for example, plastic, polycarbonate, polyolefin, PPA, PPS, or polymer such as silicone rubber. In some embodiments, molded body 50 is a thermally conductive plastic with a thermal conductivity of at least 1 W/mK. In some embodiments, the use of a thermally conducting plastic removes the need for an additional heat-sink. In some embodiments, molded body 50 is a material such as a plastic with an electrical resistivity of at least 10,000 Ωm, in order to electrically isolate parts disposed within the molded body 50 such as leads 16.
In some embodiments, a portion of molded body 50 is painted or coated with an electrically insulating paint 46. For example, as illustrated in
In some embodiments, the body 50 is molded from an electrically conducting polymer such as graphite loaded Polycarbonate. The electrically conducting molded body 50 can itself form part of the electrical circuit for the device, thereby removing a requirement for additional separate components and potentially distributing heat into the molded body 50 or removing heat from the molded body 50.
In some embodiments, molded body 50 covers at least a portion of lens 42, such that lens 42 is embedded in body 50. Molded body 50 is in direct contact with a portion of lens 42. Molded body 50 is typically opaque, though it may be transparent or translucent in some embodiments.
In some embodiments, the molded body 50 includes fins on the exterior surface which provide direct thermal coupling to the ambient air. These fins may be designed using procedures well known in the art to create efficient heat dissipation structures.
In some embodiments, after process 72 the lens is molded over the LED. In some embodiments, a lens material is used that maintains at least some of its mechanical strength when subjected to plastic injection molding. Additional components such as leaded resistors, electrical wires, or packaged semiconductor devices may be attached to the conducting substrate before or after the lens is formed.
After forming the lens and attaching any non-LED electrical components, the entire assembly is placed in a plastic molding machine such as a traditional injection molding machine. Polymer is molded over the conductive substrate, optional non-LED components, and a portion of the lens in some embodiments, in process 74. In some embodiments, the polymer body forms both the mechanical body of the bulb or lamp and also the heat-sink for carrying heat from the LEDs and other electrical components to the ambient air or to leads 16.
Having described the invention in detail, those skilled in the art will appreciate that, given the present disclosure, modifications may be made to the invention without departing from the spirit of the inventive concept described herein. Therefore, it is not intended that the scope of the invention be limited to the specific embodiments illustrated and described.
Number | Date | Country | Kind |
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PCT/CN2014/000873 | Sep 2014 | CN | national |
14191203.0 | Oct 2014 | EP | regional |
Filing Document | Filing Date | Country | Kind |
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PCT/EP2015/071028 | 9/15/2015 | WO | 00 |