Patent Application
20170062656
This application claims priority to Chinese patent application no. 201510545290.2, filed on Aug. 31, 2015, the contents of which are incorporated by reference herein.
The subject matter generally relates to light emitting diode (LED) element and particularly relates to an LED element having a protecting layer.
Illumination devices can be based on one or more different light sources. For example, light sources can include incandescent light bulbs, compact fluorescent lamps and fluorescent tubes. Recent developments have made use of light emitting diodes. In some implementations, the illumination device can include a protecting layer in conduction with an LED element.
Implementations of the present technology will now be described, by way of example only, with reference to the attached figures.
It will be appreciated that for simplicity and clarity of illustration, where appropriate, reference numerals have been repeated among the different figures to indicate corresponding or analogous elements. In addition, numerous specific details are set fourth in order to provide a thorough understanding of the exemplary embodiments described herein. However, it will be understood by those of ordinary skill in the art that the exemplary embodiments described herein can be practiced without these specific details. In other instances, methods, procedures and components have not been described in detail so as not to obscure the related relevant feature being described. Also, the description is not to be considered as limiting the scope of the exemplary embodiments described herein. The drawings are not necessarily to scale and the proportions of certain parts may be exaggerated to better illustrate details and features of the present disclosure.
A definition that applies throughout this disclosure will now be presented.
The term “comprising,” when utilized, means “including, but not necessarily limited to”; it specifically indicates open-ended inclusion or membership in the so-described combination, group, series and the like.
The present disclosure is described in relation to an LED having a reflecting cup.
The semiconductor structure 10 can be a semiconductor layer of an LED die, which includes an N type semiconductor layer, an active layer and a P type semiconductor layer (not shown) that order. The semiconductor structure 10 can be grown on a substrate and the semiconductor structure 10 can be made by Metal-organic Chemical Vapor Deposition (MOCVD), Radio Frequency magnetron Sputter, Chemical Vaporous Depositon (CVD), Physical Vaporous Deposition (PVD), Atomic Layer Deposition (ALD), or Molecular Beam Epitaxy (MBE).
The semiconductor structure 10 includes a light outputting surface 12. The light outputting surface 12 has a plurality of microstructures 122 arranged thereon. The microstructures 122 are continuous spread on the light outputting surface 12.
The electrodes 20 include a first electrode 21 and a second electrode 22 spaced apart apart from the first electrode 21. The first electrode 21 and the second electrode 22 are made of metal having excellent electric capability, such as copper or aluminum. In the illustrated exemplary embodiment, the first electrode 21 and the second electrode 22 are located at a same side of the semiconductor structure 10. The first electrode 21 and the second electrode 22 are at an opposite side from the light outputting surface 12. Sides of the first electrode 21 and the second electrode 22 apart from the semiconductor structure 10 are exposed. Preferably, the first electrode 21 includes a first upper surface 211 and a first lower surface 212 opposite to the first upper surface 211, and the second electrode 22 includes a second upper surface 221 and a second lower surface 222 opposite to the second upper surface 221. The first upper surface 211 and the second upper surface 221 are attached onto the semiconductor structure 10, and the first lower surface 212 and the second lower surface 222 are exposed out of the LED element 1, for applying power for the LED element 1 via connecting to outer circuit (not show).
The first upper surface 211 of the first electrode 21 and the second upper surface 221 of the second electrode 22 can be coplanar. The first lower surface 212 of the first electrode 21 and the second lower surface 222 of the second electrode 22 can also be coplanar. In the illustrated exemplary embodiment, the first electrode 21, the second electrode 22 and the semiconductor structure 10 cooperate to form an LED die.
The first protecting layer 30 covers the semiconductor structure 10. In the illustrated exemplary embodiment, the first protecting layer 30 is directly attached on the light outputting surface 12 of the semiconductor structure 10 and fills the microstructures 122 to entirely cover the light outputting surface 12. The first protecting layer 30 is transparent. The first protecting layer 30 is made of organic material. The organic material can includes carbon, hydrogen, oxygen, and silicon.
The LED element 1 can further include a second protecting layer 40. The second protecting layer 40 packages the first electrode 21, the second electrode 22, and surrounds the semiconductor structure 10 and the first protecting layer 30. The second protecting layer 40 includes a bottom portion 42 and a side portion 44 extending upward from periphery edges of the bottom portion 42.
The bottom portion 42 engages the first electrode 21 and the second electrode 22 therein with the first lower surface 212 of the first electrode 21 and the second lower surface 222 of the second electrode 22 exposed out of the bottom portion 42. In other words, the bottom portion 42 includes a top surface 421 and a bottom surface 422 opposite to the top surface 421. The top surface 421 is coplanar to the first upper surface 211 of the first electrode 21 and the second upper surface 221 of the second electrode 22, and the bottom surface 422 is coplanar to the first lower surface 212 of the first electrode 21 and the second lower surface 222 of the second electrode 22. The Bottom portion 42 separates the first electrode 21 and the second electrode 22.
The side portion 44 surrounds the semiconductor structure 10 and the first protecting layer 30 therein. Inner surfaces of the side portion 44 are attached with outer surfaces of the semiconductor structure 10 and the first protecting layer 30.
The second protecting layer 40 can be non-transparent. The second protecting layer 40 can be made of organic material. The organic material can includes carbon, hydrogen, oxygen, and silicon.
When the LED element 1 works, heat generated from the semiconductor structure 10 directly transmits to the electrodes 20 and then dissipates out of the LED element 1. The first protecting layer 30 can directly protect the semiconductor structure 10 from dust or moisture to contact with the semiconductor structure 10. The second protecting layer 40 can further protect the semiconductor structure 10 from dust or moisture getting into the LED element 1.
The LED element 1 can also include a light guiding layer 50. The light guiding layer 50 covers the first protecting layer 30 and is surrounded by the second protecting layer 40 along with the first protecting layer 30. The light guiding layer 50 is formed on the first protecting layer 30 and is surrounded by the side portion 44 of the second protecting layer 40. The light guiding layer 50 can be made of transparent material, such as glass or sapphire. The light guiding layer 50 can adjust optical property of light emitted from the semiconductor structure 10. The light guiding layer 50 can further protect the semiconductor structure 10 from dust or moisture.
A difference between the LED element 2 of the second exemplary embodiment and the LED element 1 of the first exemplary embodiment is that a phosphor layer 60 is formed on the light guiding layer 50. The phosphor layer 60 has phosphor powder therein. In the illustrated exemplary embodiment, the semiconductor structure 10 emits blue light. The phosphor layer 60 has yellow phosphor powder therein. Thus, the LED element 2 emits white light when the blue light emitted from the semiconductor structure 10 penetrating through the phosphor layer 60.
A difference between the LED element 3 of the third exemplary embodiment and the LED element 1 of the first exemplary embodiment is that the light guiding layer 50 has phosphor powder therein. In the illustrated exemplary embodiment, the semiconductor structure 10 emits blue light. The light guiding layer 50 has yellow phosphor powder therein. Thus, the LED element 3 emits white light when the blue light emitted from the semiconductor structure 10 penetrating through the light guiding layer 50.
A difference between the LED element 4 of the fourth exemplary embodiment and the LED element 1 of the first exemplary embodiment is that the light guiding layer 80 is made of Yttrium Aluminum Garnet (YAG) crystal.
It is to be further understood that even though numerous characteristics and advantages have been set forth in the foregoing description of exemplary embodiments, together with details of the structures and functions of the exemplary embodiments, the disclosure is illustrative only; and that changes may be made in detail, according in matters of shape, size, and arrangement of parts within the principles of the disclosure to the full extent indicated by the broad general meaning of the terms in which the appended claims are expressed.
The exemplary embodiments shown and described above are only examples. Many details are often found in the art such as the other features of the LED element. Therefore, many such details are neither shown nor described. Even though numerous characteristics and advantages of the present technology have been set forth in the foregoing description, together with details of the structure and function of the present disclosure, the disclosure is illustrative only, and changes may be made in the detail, especially in matters of shape, size and arrangement of the parts within the principles of the present disclosure up to, and including the full extent established by the broad general meaning of the terms used in the claims. It will therefore be appreciated that the exemplary embodiments described above may be modified within the scope of the claims.
| Number | Date | Country | Kind |
|---|---|---|---|
| 201510545290.2 | Aug 2015 | CN | national |
