A first objective of the present invention is to provide a Lenz route parallel to an inductor in a circuit to dissipate the Lenz power so that the circuit will present more stability and less noises. A second objective of the present invention is to provide a Lenz route to a switch to protect the switch against the Lenz effect.
More electronic devices have been invented and they have been used in many different fields and applications. A lot of critical problems still exist in the devices and can't be solved for quite long time. Those problems include accumulated heat, noise and low sensitivity which will cause the devices and systems unstable. The present invention can benefit the devices and systems with some advantages:
The background of the invention is introduced by beginning from mathematical model and through some representative devices and circuits. First, the Cauchy-Riemann equations are used to describe a system's impedance behaviors. Consider the impedance z in the complex form of
z=F(i,v)+jG(i.v) (1)
where i, v are current and voltage respectively. Assumed that the functions F (i, v) and G(i.v) are analytic in the specific domain, from the Cauchy-Riemann equations as following
Using the chain rule, we further obtain from the equations (2) and (3)
where the variable ω may be the frequency, temperature, magnetic flux density, optical intensity and so on. Let the terms
be non-zero and the same sign. Under the same sign conditions as the equation (6) or (7), from the equations (4) and (5),
should be held simultaneously. Equation (8) expresses the slope of impedance function a positive value which is called Positive Differential Resistivity or simply in short as PDR. Equation (9) expresses the slope of impedance function a negative value which is called Negative Differential Resistivity or simply in short as NDR. From the point of view of making a power source, the simple way to perform equation (6) and (7) is using the pulse-width modulation (PWM) method. The further meaning of equation (6) and (7) is that using the variable frequency ω in pulse-width modulation to current and voltage is the most straightforward way, i.e.,
In nature,
are positive or in general, under the condition like as the (9.1)
Putting equation (9.1) into (4) and (5), we obtain
Surprisingly, we can find a negative slope in the I-V curve of some special fiber-carbon materials
or in parameter form
where the resistance R is a positive value,
also its equivalent form
The negative sign contributed from the current or voltage has a backward direction with respect to input current I or voltage V. In particular, this reverse current (−I) is to be called “back flow current.” Considering a semiconductor case is setting the voltage to be a multi-frequency pattern as
which is produced by the PWM controller in the power source and its corresponding current is
where q (Coulomb) is the elementary charge,
q=1.602×10−19 (C)
is the Boltzmann constant,
k=1.380×10−23
T (K°) is the absolute temperature of the P-N junction.
After obtaining the qualitative behaviors of PDR and NDR expressed by the equations (8) and (9) above, now we further look their quantitative behaviors. In theory, for a closed loop whose impedance is in the form of the equation (1) can be analogical to a simple parallel oscillator shown in
or in matrix form
where the function Fp(y) represents the generalized Ohm's law and for the single variable case, Fp(y) is the real part function of the impedance function shown by the equation (1). “p” here stands for “parallel” oscillator. Furthermore, the equation (12) is a Liénard system which will be explained later. If taking the linear from of Fp(y),
F
p(y)=Ky
and K>0, it is a normally linear Ohm's law. Also, the state-equation of a simple series oscillator shown in
Or in the matrix form,
Where iC, vl are replaced by x, y respectively. The function Fs(x) indicates the generalized Ohm's law, and, for the single variable case, Fs(x) is the real part of the impedance function shown by the equation (15). Here “s” stands for “series” oscillator. Further, the equation (15) is the Liénard system too. Again, considering one system as shown by the equation (15), let L, C be to one, then the system becomes the form of
To obtain the equilibrium point of the systems by the equations (15) and (16), setting the right hand side of the equations (15) and (16) to zero
where Fp(0) and Fs(0) are the values of the generalized Ohm's law at zero. The gradient of equation (16) is
Let the slope of the generalized Ohm's law F′s(0) be a new function as fs(0)
f
s(0)≡F′s(0)
the correspondent eigenvalues λs1,2 are as
Similarly, in the simple parallel oscillator shown by the equation (12),
f
p(0)≡F′p(0)
the equilibrium point of the equation (12) is set to (Fp(0),0) and the gradient of the equation (12) is
the correspondent eigenvalues λp1,2 are
The qualitative properties of the systems shown by the equations (12) and (15), referred to [6] and [8], are as the following:
F′
s(x)=fs(x)>0 (17)
or
F′
p(y)=fp(y)>0 (18)
On the contrary, a negative value of the slope value of impedance function Fs(x) or fs(x), or, a negative value of the slope of impedance function Fp(y), or fp(y) are called “negative differential resistivity” or simply “NDR”. They are shown by the equations (19) and (20) respectively below. If the value of derivative of the impedance function of any device or assembly is smaller than zero, we can call the device or assembly presenting NDR property in the present invention.
F′
s(x)=fs(x)<0 (19)
or
F′
p(y)=fp(y)<0 (20)
F′
s(x)=fs(x)=0 (21)
or
F′
p(y)=fp(y)=0 (22)
Semiconductor devices are widely used in many applications and the behaviors of their impedance function are worth noticing. Now a superconductor Josephson junction device has been introduced in some books as [4, Chapter 2, 3, 4, 5], [13, Vol. 3, Section 14.4], [12, section 4.6] and also referred by the invention describing Josephson junction device. Josephson junction device is discussed here because it has been well modeled and analyzed, and, the device is a representative of semiconductor P-N junction which is widely seen in many semiconductor devices. The behavior of semiconductor P-N junction is very dynamical and is hard to predict. This weak coupling exists in the junction causes the devices a lot of problems such as thermo heat, noise and low sensitivity, etc. Those problems are seen in almost all the semiconductor devices such as in solar cells, Hall sensors, ICs, IGBTs, Thyristors, CPUs, DSPs, ASICS, IPMS, MOSFETs, SCRs, CCD, LEDs, transistors, laser diodes and diodes, dielectric resonator antenna (DRA), digital controllers or micro controllers, transmission lines and waveguides, fiber communication devices, data buses, sodium lamps, mercurial bulbs, etc. and they will eventually cause the devices and systems unstable or overheated.
A superconducting Josephson junction device is an equivalent circuit can be modeled as a simple parallel oscillator expressed by the equation (12). More detailed of Josephson junction device can be referred by some books [4, Chapter 2,3,4,5], [12, Section 4.6].
Now we are going to find out what kind of conditions are needed for a system to be stabilized. Liénard theorem is helpful to explain this. Taking the system as expressed by the equation (12) or (15) is treated as a nonlinear dynamical system, we can extend these systems to be a well-known result on the existence of the limit cycle, referred to [11, Page 253-260], [10, Page 402-407], for a dynamical system as the form of
under certain conditions on the functions F and g. Or its equivalent form of a nonlinear dynamics from the equation (23) as
where the damping function f(x) is the first derivative of impedance function F(x) with respect to the state x
f(x)=F′(x) (25)
Based on the spectral decomposition theorem [2, Chapter 7], the damping function has to be a non-zero value if it is a stable system. The impedance function is
y=F(x) (26)
From the equations (23), (24) and (25), the impedance function F(x) is the integral of damping function f(x) over one specific operated domain x>0 as
F(x)=∫0xf(x)dx (27)
Under the assumptions that F, gεC1(R), F and g are odd functions of x, F(0)=0, F′(0)<0, F has single positive zero at x=a, and F increases monotonically to infinity for x≧a as x→∞, it follows that the Liénard system by equation (23) has exactly one limit cycle and it is stable. Comparing the equation (27) to the bifurcation point defined by the equation (21) or (22), the initial condition of the equation (27) is extended to an arbitrary setting as
F(x)=∫axf(x)dx (28)
where aεR. We conclude that an adaptive-dynamic impedance function F(x) has the following properties:
α≦a
the impedance function F(x) is
F(x)<0
The derivative of function F(x)
F′(x)=f(x)>0 (29)
This is a positive differential resistivity or simply PDR as defined by the equation (17) or (18), or,
F′(x)=f(x)<0 (30)
this is a negative differential resistivity or simply NDR as defined by the equation (19) or (20) of which both are held simultaneously. It means that the impedance function F(x) has the negative and positive slopes at the interval α≦a.
A first objective of the present invention is to provide a Lenz route parallel to an inductor in a circuit to dissipate the Lenz power so that the circuit will present more stability and less noises.
A second objective of the present invention is to provide a Lenz route to a switch to protect the switch against the Lenz effect.
The properties of the PDR and NDR have respectively been defined by the equations (9.1) and (9.2). A device is called PDR-equipped device if the device has PDR property. A device is called NDR-equipped device if the device has NDR property. A device is called PNDR-equipped device if it has PDR and NDR properties.
An assembly includes at least two devices serially coupled with each other and all the devices of the assembly are PDR-equipped devices then the assembly is called PDR-equipped assembly. An assembly includes at least two devices serially coupled with each other and all the devices of the assembly are NDR-equipped devices then the assembly is called NDR-equipped assembly. An assembly includes at least two devices serially coupled with each other and the assembly comprises a PDR-equipped device and a NDR-equipped device then the assembly is a PNDR-equipped assembly.
A PDR-equipped assembly can become PNDR-equipped assembly by adding at least one NDR-equipped device serially coupled with any one device of the assembly and no more PDR-equipped device is needed although the assembly is still allowed to be added more PDR-equipped device. A NDR-equipped assembly can become PNDR-equipped assembly by adding at least one PDR-equipped device serially coupled with any one device of the assembly and no more NDR-equipped device is needed although the assembly is still allowed to be added more NDR-equipped device. A PNDR-equipped assembly needs no more added PDR-equipped and NDR-equipped devices although the assembly is still allowed to be added more PDR-equipped and NDR-equipped devices. A PNDR-equipped assembly can be achieved by including all the possible ways explained above in the present invention.
For example, if a loop originally includes five devices serially coupled with each other and if the loop comprises a PDR-equipped device and a NDR-equipped device of the five devices then the loop is for sure a PNDR-equipped loop. If all the five devices originally in the loop are PDR-equipped devices then at least a NDR-equipped device is needed to be added to serially couple with any one device of the loop to make the loop a PNDR-equipped loop. If all the five devices originally in the loop are NDR-equipped devices then at least a PDR-equipped device is needed to be added to serially couple with any one device of the loop to make the loop a PNDR-equipped loop. If the properties of the five devices are not known then a PDR-equipped device and a NDR-equipped device can still be serially coupled with any one device of the loop to make sure that the loop is a PNDR-equipped loop.
If an assembly is written by comprising at least a device, at least a PDR-equipped device and at least a NDR-equipped device serially coupled with each other. The device or devices other than the PDR-equipped and NDR-equipped devices can have PDR or NDR property or even both properties, and the device or devices can also be accounted as the PDR-equipped and NDR-equipped devices in the assembly.
For example, if a loop is expressed comprising a X, a Y, a Z, a PDR-equipped device and a NDR-equipped device serially coupled with each other. The devices, which are the X, Y and Z, other than the PDR-equipped device and NDR-equipped device in the assembly can also have PDR or NDR property or even both properties, and, the device or devices can be accounted the PDR-equipped and NDR-equipped devices in the loop. For example, if the X is a PDR-equipped device then the loop can also be expressed by comprising the X, Y, Z and a NDR-equipped device serially coupled with each other. If the Y is a NDR-equipped device then the loop can also be expressed by comprising the X, Y, Z and a PDR-equipped device serially coupled with each other. If the Y is a NDR-equipped device and the Z is a PDR-equipped device then the the loop can also be expressed by comprising the X, Y and Z serially coupled with each other. If the properties of the X, Y and Z are unknown then the loop still can be expressed by comprising the X, Y, Z, the PDR-equipped device and the NDR-equipped device serially coupled with each other. The X, Y and Z can be the PDR-equipped and NDR-equipped devices, or, the PDR-equipped and NDR-equipped devices can be the devices other than the X, Y and Z. A transmission line coupling the devices in the loop can be accounted for a device in the loop, for example, the X can be a transmission line.
If an assembly is expressed by comprising at least a device, at least a PDR-equipped device and at least a NDR-equipped device serially coupled with each other the assembly includes all the possibilities discussed above. The present invention is not limited to any particular way to make an assembly a PNDR-equipped assembly.
When a close loop is suddenly opened or closed, the Lenz voltage will be generated at inductance type load such as inductor in the loop. The Lenz current generated by the Lenz voltage flows oppositely to the normal current and it usually comes with very high and broadband frequency. The circuit will presents unstable and noises if the reversed generated Lenz current is blocked somewhere in the circuit, for example, an inductor becomes to present very high impedance when the high frequency Lenz current flows thru the inductor.
A circuit comprising a frequency-modulated DC power source and an inductor is discussed first. A frequency-modulated DC power source can be expressed by comprising a switch controlled by a PWM controller. A circuit in a general form shown in
The switch mentioned in the present invention includes at least two terminals, which can be respectively specified as a first terminal and a second terminal in the present invention, and the two terminals can become electrically connected or disconnected controlled by any method. The switch is demonstrated by the power module 105 which has three terminals in which the drain and source terminals can become electrically connected or disconnected controlled by an input of the gate terminal.
The loop shown in
The Lenz currents generated by the Lenz voltages flow oppositely to the normal current from the power source 103. The reversed Lenz current will flow toward the first inductor 105 and the power module 105. The reversed Lenz current flowing toward the first inductor 105 is hard to go thru the first inductor 101 for its high impedance so that a first Lenz route parallel to the first inductor 101 is designed to let the reversed Lenz current flow thru it. The reversed Lenz current flowing toward the power module 105 could potentially strike the power module 105 so that the two ends of a second Lenz route respectively electrically couple the source and drain terminals of the power module 105 to let the reversed Lenz current flow thru it. A loop formed by a Lenz route and its parallel device can be called Lenz loop in the present invention.
It is expected that the normal current from the power source 103 will not flow thru the two Lenz routes, which means that the two Lenz routes are expected to be input-unrelated. The “Input” of “input-unrelated” means that the current is from the power source. A device making a Lenz route as an input-unrelated Lenz route is called input-unrelated device in the present invention. For example, for the loop with a DC power source shown in the embodiment of
Each of the two Lenz routes comprises an input-unrelated device, at least a PDR-equipped device demonstrated by a PDR-equipped device, and at least a NDR-equipped device demonstrated by a NDR-equipped device serially coupled with each other. Any one or both the PDR-equipped and NDR-equipped devices can be the input-unrelated device or the transmission line or an added device. The first Lenz route parallel to the first inductor 101 comprises an input-unrelated device 109, at least a PDR-equipped device demonstrated by a PDR-equipped device 110, and at least a NDR-equipped device demonstrated by a NDR-equipped device 111 serially coupled with each other. The two ends of the second Lenz route respectively electrically connect the drain and source of the power module 105 in which the second Lenz route comprises an input-unrelated device 112, at least a PDR-equipped device demonstrated by a PDR-equipped device 113, and at least a NDR-equipped device demonstrated by a NDR-equipped device 114 serially coupled with each other. The serially coupled PDR-equipped device or devices and NDR-equipped device or devices in a Lenz route has damping effect which can quickly dissipate the Lenz power flowing in the Lenz route. The input-unrelated device 109 is used to let the reversed Lenz current flowing the Lenz route bypass the first inductor 101 and block the normal current from the power source flowing the Lenz route so that the normal current from the power source will still flow thru the first inductor 101. The present invention is not limited to any particular switch, for example, the switch can be a MOSFET device, IGBT device or Thyristor device etc. A switch with Lenz route design can have better protection against Lenz effect in a circuit and can also cancel the parasitic capacitance in the switch such as power module. The Lenz route can be embedded and packaged into the switch.
The Lenz loop of the first inductor 101 shown in
The first Lenz route of the first inductor 101 can further comprise a transformer coil of a transformer for delivering the Lenz power to another loop thru the transformer.
Another embodiment associated with an AC power source is shown in
A third Lenz route, which has the same structure as the first and second Lenz routes of the first inductor shown in
Each Lenz route can further comprises a transformer coil of a transformer which is used to deliver the Lenz power to another outside loop thru the transformer.
From the equations (4), (5) and (9.2), a back flow current exists in any closed loop. The back flow current will interfere with the normal current from the power source resulting in lowering the circuit's performance. If a device, which can be called decoupler in the present invention, can decouple the back flow current and lead the back flow current into a path different from the path from power source then the power of the back flow current can be recycled. The decoupler has at least two requirements: (1) the decoupler is for decoupling the back flow current and it includes at least four ports in which two ports, which can be called as input ports, are for input current and the other two ports, which can be called output ports, are for output current, and the path of the input current is different from the path of the output current, and the decoupled back flow current is guided to the output ports, (2) the decoupler has NDR property for the loop formed by its two output ports.
A research of a carbon fiber composite was revealed in a report “Apparent negative electrical resistance in carbon fiber composites” and an experiment of “how to building a four-lamina carbon fiber composite” has been successfully conducted. Both articles are sent in the IDS files with the present invention as references. Upon the observation of the articles, the four-lamina carbon fiber composite has shown NDR property and good linearity.
Upon the observation of the articles and experiment of the four-lamina carbon fiber composite, firstly, the four-lamina carbon fiber composite is a 4-port device of which two ports are for input and the other two ports are for output. The back flow current can be decoupled and out thru the output ports so that the path of the output current is different from the path of the input current. Secondly, the four-lamina carbon fiber composite has NDR property for the loop formed by its two output ports. Thirdly, there is almost no phase shift seen between the input and output, which means that the four-lamina carbon fiber composite has no significant inductance and capacitance, and the composite has very small resistance which almost can be in the range of neglect. Fourthly, the four-lamina carbon fiber composite has very high frequency response which is good for its coupled high frequency load. Undoubtedly, the four-lamina carbon fiber composite agrees with the two requirements defined for the decoupler and it can be used as a decoupler.
The Lenz current can be coupled out of a Lenz route by placing a decoupler in the Lenz route. The first Lenz route is used as an example.