Patent Application
20090302735
1. Field of the Invention
The present invention relates to a light emitter substrate and an image displaying apparatus which uses the light emitter substrate.
2. Description of the Related Art
Conventionally, an image displaying apparatus which comprises an electron source substrate having plural electron-emitting devices arranged in matrix and a light emitter substrate having plural light-emitting members arranged in matrix and opposed to the plural electron-emitting devices has been known. In the image displaying apparatus like this, the light emitter substrate and the electron source substrate are typically opposed to each other at a gap of about several millimeters, and high voltage of, e.g., approximately 10 kV is applied between these substrates. For these reasons, a discharge occurs easily, and, if the discharge once occurs, a discharging current flows from the whole of a metal back which has been integrally formed, whereby an influence to the electron-emitting devices expands.
Consequently, in order to allow the image displaying apparatus of the above type to have a discharging current control function, Japanese Patent Application Laid-Open No. 2006-173094 corresponding to U.S. Patent Publication No. 2006/0103294 and Japanese Patent Application Laid-Open No. 2006-185632 corresponding to European Patent Publication No. 1830379A1 respectively disclose techniques for controlling a discharging current by two-dimensionally dividing a metal back and establishing a connection between the divided metal backs by a resistor.
However, if a discharge occurs in a case where further high voltage is applied to improve luminance, a potential difference between the adjacent metal backs increases, whereby there is a possibility that a secondary discharge occurs between the adjacent metal backs. Besides, if the resistor is arranged between the adjacent metal backs, discharge voltage of a material of the resistor is lower than surface discharge voltage between the metal backs according to a kind of the relevant material, whereby there is a possibility that withstand discharge structure is destroyed. In particular, in an ordinary image displaying apparatus to be used for a TV monitor, since a distance between the metal backs adjacent in a horizontal direction (=a row direction) is small, the secondary discharge occurs easily. If the secondary discharge occurs, the discharging current increases, whereby there is a possibility that a damage such as device destruction or the like which is not preferable for image displaying occurs.
To cope with such a problem as described above, in Japanese Patent Application Laid-Open Nos. 2006-173094 and 2006-185632, it is designed to define resistance in the row direction without arranging any resistor between light-emitting members adjacent in the row direction. More specifically, Japanese Patent Application Laid-Open No. 2006-173094 discloses the structure that the metal back divided in matrix and the resistors patterned in matrix are combined, and any resistor is not arranged between the metal backs adjacent in the row direction. Further, Japanese Patent Application Laid-Open No. 2006-185632 discloses the structure that the metal backs divided in matrix and striped resistors expanding in the row direction between the metal backs adjacent in a column direction are connected on the column side of the light-emitting members.
However, in the light emitter substrate disclosed in Japanese Patent Application Laid-Open No. 2006-173094, further improvement is desired in the points of definition of the resistance of the resistor and the discharge voltage of the material. Also, in the light emitter substrate disclosed in Japanese Patent Application Laid-Open No. 2006-185632, structure of further weakening field intensity applied to the resistor by controlling the secondary discharge between the metal backs adjacent in the row direction is desired.
The present invention aims to improve, in a light emitter substrate which has a resistor for connecting electrodes adjacent in a row direction, withstand discharge performance of the resistor. Moreover, the present invention aims to provide an image displaying apparatus which uses the light emitter substrate like this.
A light emitter substrate according to the present invention comprises a substrate, plural light-emitting members which are positioned in matrix on the substrate, plural electrodes each of which covers at least one of the light-emitting members and which are positioned in matrix, and a row-direction resistor which is positioned between the electrodes adjacent to each other in a row direction and connects these electrodes to each other. The light emitter substrate is characterized in that a row-direction separated distance between the electrodes adjacent to each other in the row direction at a connecting portion between the electrodes and the row-direction resistor is larger than a row-direction separated distance between the electrodes adjacent to each other in the row direction at a portion covering the light-emitting members.
Moreover, an image displaying apparatus according to the present invention comprises: an electron source substrate having plural electron-emitting devices; and the above-described light emitter substrate, wherein the light-emitting members of the light emitter substrate emit light in response to electrons emitted from the electron-emitting devices.
According to the present invention, in the light emitter substrate which has the resistor for connecting the electrodes adjacent in the row direction, it is possible to improve the withstand discharge performance of the resistor. Moreover, according to the present invention, it is possible to provide the image displaying apparatus which uses the light emitter substrate like this.
Further features of the present invention will become apparent from the following description of the exemplary embodiments with reference to the attached drawings.
Hereinafter, the exemplary embodiments of the present invention will be described with reference to the attached drawings. A light emitter substrate of the present invention can be applied to an electron beam displaying apparatus such as a CRT (Cathode Ray Tube) or an FED (Field Emission Display). Especially, since a space between an anode and a cathode becomes a state of high electrical field in the FED, high withstand discharge performance is required. Therefore, the FED is a preferable form to which the present invention is applied.
As to the embodiment of the present invention, it will be specifically described with reference to the drawings by exemplifying an image displaying apparatus of using surface conduction electron-emitting devices (SED (Surface-Conduction Electron-emitter Display) in particular among the FEDs.
The electron source substrate 8 has a glass substrate 9, row wirings (scanning wirings) 10 and column wirings (signal wirings) 11 formed on the glass substrate 9 and the surface conduction electron-emitting devices 12. The number of the row wirings 10 is N and the number of the column wirings 11 is M, and the N×M surface conduction electron-emitting devices 12 are formed. The N and M, which are positive integers, can be arbitrarily set in accordance with the intended number of display pixels. For example, in case of an FHD (Full High Definition) panel, the N is equal to 1080 and the M is equal to 1920×3, that is, 5760.
When referring to
The light emitter substrate 1 has a substrate 2. It is preferable to use a glass substrate for the substrate 2 especially in a point that the vacuum performance is maintained and the intensity is ensured.
A black member 3 is provided on the substrate 2. The black member 3, which has apertures, is formed in a lattice-like shape. The light-emitting members 4 consisted of the phosphors are formed on the apertures. The light-emitting members 4 are color-coded by R (Red), G (Green) and B (Blue) in case of a color display. The color-coding pattern can be arbitrarily determined in accordance with the display characteristics and that pattern is not limited to the present embodiment. In
When referring to
That is, in the light emitter substrate 1 of the present embodiment, plural light-emitting members 4 arranged in matrix on the substrate 2 are formed, and spaces between the light-emitting members 4 are partitioned by the black member 3. The row-direction resistor 6 continuously extended in the row direction (X direction) is formed on the black member 3. In addition, the column-direction resistors 7 are discretely provided in the column direction (Y direction) on the black member 3. A large number of metal backs 5, each of which covers the two light-emitting members 4, are formed on these members. Although the adjacent metal backs 5 are not directly connected each other, the metal backs are electrically connected in the row direction (X direction) and the column direction (Y direction) respectively by the row-direction resistor 6 and the column-direction resistors 7.
By the plural metal backs 5 two dimensionally arranged as described above and the resistors 6 and 7 of connecting these metal backs, even if a discharge occurs in a certain metal back, a discharge current can be reduced by preventing or absorbing the discharge occurred in other metal backs by the discharge current suppressing function of the resistors 6 and 7.
The row-direction resistor 6 is arranged on positions where the width of the metal backs 5 became a narrow state (positions indicated by a 4A-4A line illustrated in
As illustrated in
As illustrated in
The metal backs 5 can be patterned by a masking process or an etching process by using a generally known deposition method. In particular, it is preferable to perform a mask vapor deposition method because of its simplicity.
The resistors 6 and 7 can be formed by a generally known manufacturing method such as a pattern printing method, a dispenser application method or a photolithography method. In particular, the pattern printing method is preferable from a viewpoint of accuracy and productivity.
This example is an example of a light emitter substrate illustrated in
A lattice-like shape, which has apertures only on desired regions in a light emitting region, is screen printed on a surface of a cleaned glass substrate by using a black paste (NP-7803D available by Noritake Co., Ltd.), and the glass substrate is baked at the temperature 550° C. after drying it at the temperature 120° C. to form a black member 3 of which thickness is 5 μm. Pitches of aperture portions were set to become 450 μm in the Y direction and 150 μm in the X direction, which are same as those in device pitches on a rear plate, and the size of an aperture portion is set to become 220 μm in the Y direction and 90 μm in the X direction.
A high-resistance paste, in which a ruthenium oxide is contained, was printed on the black member 3 by a screen printing method such that the film thickness after the baking becomes 10 μm as the row-direction resistor 6 and the column-direction resistors 7. This paste printed on the black member was baked at the temperature 530° C. after drying it for ten minutes at the temperature 120° C. The row-direction resistors 6 were formed for all the rows every two rows on a row direction pattern of the black member 3. The column-direction resistors 7 were formed between apertures of the black member 3 of interleaving the row direction pattern every column on the row direction pattern where the row-direction resistors 6 are not arranged. In this example, the volume resistance of the high-resistance paste after the baking was set to become 2Ω·m, and the width of the row-direction resistor 6 was set to become 50 μm and the width of the column-direction resistor 7 was set to become 80 μm.
Next, a paste, in which a phosphor P22 used in a field of a CRT was dispersed, was printed on apertures of the black member 3 by the screen printing method as the light-emitting members 4. In this example, the phosphors of three colors of R, G and B are color-coded with a striped shape such that a display becomes to act as a color display. The film thickness of each phosphor was set to become 15 μm. The phosphors of three colors of R, G and B were dried at the temperature 120° C. after the printing. A drying process may be executed for each of colors or the three colors. In addition, an alkaline solution of silicic acid, that is, a water solution of including liquid glass acting as the bonding agent later was spray applied.
Next, an acrylic emulsion is applied by a spray coating method and dried to infill gaps in the phosphor powder with the acrylic resin, and an aluminum film serving as the metal back 5 was vapor deposited. In this case, a metal mask which has aperture portions on at least the portions corresponding to apertures of the black member 3 is used, and the metal backs 5 were formed on the light-emitting members 4. The thickness of aluminum was set to become 100 nm. Thereafter, the above-described resin was made to be decomposed and eliminated by heating the resin at the temperature 450° C.
The metal backs 5, which are formed from wide width portions, where the X-direction width (Mx) is 100 μm and the Y-direction width (My) is 330 μm, and narrow width portions, where the row direction width (Mx′) is 50 μm and the column direction width (My′) is 120 μm, were formed by an aluminum film. Note that the row-direction resistors 6 are set to be fitted into the range of the above-described narrow width portions in portions of connecting with the metal backs. Herewith, the separated distance (Gx′=100 μm) between the metal backs adjacent to each other in the row direction at portions of connecting with the row-direction resistors 6 was made to be longer than the separated distance (Gx=50 μm) between the metal backs adjacent to each other in the row direction at portions of covering the light-emitting members.
As a result, the width and length of the row-direction resistor 6 respectively become 50 μm and 100 μm, and the resistance Rx became a level of Rx=400 kΩ. And, the width and length of the column-direction resistor 7 respectively become 80 μm and 120 μm, and the resistance Ry became a level of Ry=200 kΩ.
An SED is manufactured by using a light emitter substrate 1 manufactured in this manner, and a discharge between the light emitter substrate 1 and the electron source substrate 8 was induced by ingenerating the device destruction by applying the voltage of 10 kV between the light emitter substrate 1 and the electron source substrate 8 and applying the excessive voltage to a specific device. Although about ten times of the induced discharges were performed, the light emission due to the discharge was observed only in the vicinity of the destructed device, and the light emission suggesting the breakdown of the row-direction resistors 6 or the column-direction resistors 7 was not confirmed. In addition, a discharge current was also controlled as expected. Additionally, although the damage of devices was confirmed by lighting up a whole surface with white after the discharge experiment, the damage could not be confirmed in peripheral devices other than the device purposely destructed.
This example is different from Example 1 in a point that the metal back 5 is formed to cover the three light-emitting members 4 adjacent to each other in the column direction (Y direction) as illustrated in
As to a light emitter substrate 16 manufactured in this manner, although the resistance design is same as that in Example 1, the volume resistance of a resistant paste can be doubled, and the discharge voltage of the row-direction resistors 6 and the column-direction resistors 7 can be increased.
An SED is manufactured by using this light emitter substrate 16, and when a discharge inducing experiment similar to that in Example 1 was conducted by applying the voltage of 10 kV between the light emitter substrate 16 and the electron source substrate 8, a discharge current equivalent to that in Example 1 was observed. In addition, although the similar discharge experiment was conducted under the condition of increasing the voltage to 12 kV, the light emission due to the discharge was observed only in the vicinity of the destructed device, and the light emission suggesting the breakdown of the row-direction resistors 6 or the column-direction resistors 7 was not confirmed. In addition, a discharge current was also controlled as expected. Additionally, although the damage of devices was confirmed by lighting up a whole surface with white after a discharge experiment, the damage could not be confirmed in peripheral devices other than the device purposely destructed.
This example is different from Example 1 in a point that the metal back 5 is formed to cover the six light-emitting members 4 in total consisted by two members adjacent to each other in the column direction and three members adjacent to each other in the row direction as illustrated in
The row direction width (Mx) and the column direction width (My) at portions of covering the light-emitting members 4 of the metal backs 5 were respectively set to become 350 μm and 330 μm, and the row direction width (Mx′) and the column direction width (My′) on narrow width portions were respectively set to become 150 μm and 120 μm. As a result, the resistance Rx and the resistance Ry respectively became levels of Rx=1.2 MΩ and Ry=70 kΩ.
As to a light emitter substrate 17 manufactured in this manner, the separated distance (Gx) between the metal backs adjacent to each other in the row direction at portions of covering the light-emitting members was 50 μm similar to that in Example 1. However, the separated distance between the metal backs adjacent to each other in the row direction at portions of connecting with the resistors can be increased to a triple distance Gx′=300 μm as compared with a case in Example 1, and the discharge voltage can be increased by weakening the field intensity.
An SED is manufactured by using this light emitter substrate 17, and when a discharge inducing experiment similar to that in Example 1 was conducted by applying the voltage of 10 kV between the light emitter substrate 17 and the electron source substrate 8, a discharge current equivalent to that in Example 1 was observed. In addition, although the similar discharge experiment was conducted under the condition of increasing the voltage to 12 kV, the light emission due to the discharge was observed only in the vicinity of the destructed device, and the light emission suggesting the breakdown of the row-direction resistors 6 or the column-direction resistors 7 was not confirmed. In addition, a discharge current was also controlled as expected. Additionally, although the damage of devices is confirmed by lighting up a whole surface with white after a discharge experiment, the damage could not be confirmed in peripheral devices other than the device purposely destructed.
While the present invention has been described with reference to the exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. The scope of the following claims is to be accorded the broadest interpretation so as to encompass all such modifications and equivalent structures and functions.
This application claims the benefit of Japanese Patent Application No. 2008-150427, filed Jun. 9, 2008, which is hereby incorporated by reference herein in its entirety.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2008-150427 | Jun 2008 | JP | national |
