Patent Application
20230284522
This application is based on and claims priority to Korean Patent Application No. 10-2022-0028960, filed on Mar. 7, 2022, in the Korean Intellectual Property Office, and all the benefits accruing therefrom under 35 U.S.C. § 119, the content of which is incorporated by reference herein in its entirety.
One or more embodiments relate to a light-emitting device and an electronic apparatus including the light-emitting device.
Light-emitting devices, e.g., organic light-emitting devices (OLEDs), are self-emissive devices that, as compared with devices of the related art, have wide viewing angles, high contrast ratios, short response times, and excellent characteristics in terms of brightness, driving voltage, and response speed.
In the organic light-emitting devices, an emission layer may be located between an anode and a cathode, wherein holes are injected from the anode to the emission layer, and electrons are injected from the cathode to the emission layer. Carriers, such as holes and electrons, recombine in the emission layer to produce excitons. These excitons transition from an excited state to a ground state, thereby generating light.
In another example, quantum dots may be used as materials that perform various optical functions in optical members and various electronic apparatuses. For example, quantum dots can provide a light conversion function, a light emission function, or the like. Quantum dot are semiconductor nanocrystals with a quantum confinement effect. Quantum dots may have different energy bandgaps that are based on the size and/or the composition of the nanocrystals, and these properties allow quantum dots to emit light of various emission wavelengths.
One or more embodiments include a light-emitting device having a low driving voltage and excellent luminescence efficiency, a method of manufacturing the light-emitting device, and an electronic apparatus including the light-emitting device.
Additional aspects will be set forth in part in the detailed description which follows and, in part, will be apparent from the detailed description, or may be learned by practice of the presented exemplary embodiments.
According to an aspect, a light-emitting device includes:
According to another aspect, a method of manufacturing a light-emitting device includes:
According to still another aspect, an electronic apparatus includes the light-emitting device.
The above and other aspects, features, and advantages of certain exemplary embodiments will be more apparent from the following description taken in conjunction with the accompanying drawings, in which:
Reference will now be made in detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the present embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Accordingly, the embodiments are merely described below, by referring to the figures, to explain aspects of the present description. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items. The expression “at least one of a, b or c” indicates only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof.
The terminology used herein is for the purpose of describing one or more exemplary embodiments only and is not intended to be limiting. As used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. The term “or” means “and/or.”
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. It will be understood that, although the terms first, second, third etc. may be used herein to describe various elements, components, regions, layers, and/or sections, these elements, components, regions, layers, and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, or section from another element, component, region, layer, or section. Thus, a first element, component, region, layer, or section discussed below could be termed a second element, component, region, layer, or section without departing from the teachings of the present embodiments.
In the embodiments described in the present specification, an expression used in the singular encompasses the expression of the plural, unless it has a clearly different meaning in the context.
In the following embodiments, when various components such as layers, films, regions, or plates are described as being “on” another component, this expression may include not only a case where the layers, films, regions, or plates are “directly on” the other component but also a case in which another component may be placed therebetween. In addition, sizes of components in the drawings may be exaggerated for convenience of explanation. In other words, since sizes and thicknesses of components in the drawings are arbitrarily illustrated for convenience of explanation, the following embodiments are not limited thereto.
As used herein, it is to be understood that the terms such as “including,” “having,” and “comprising” are intended to indicate the existence of the features or components disclosed in the specification, and are not intended to preclude the possibility that one or more other features or components may exist or may be added. For example, unless otherwise limited, terms such as “including” or “having” may refer to either consisting of features or components described in the specification only or further including other components.
Exemplary embodiments are described herein with reference to cross section illustrations that are schematic illustrations of idealized embodiments. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments described herein should not be construed as limited to the particular shapes of regions as illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, a region illustrated or described as flat may, typically, have rough and/or nonlinear features. Moreover, sharp angles that are illustrated may be rounded. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region and are not intended to limit the scope of the present claims.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this general inventive concept belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present disclosure, and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
“About” or “approximately” as used herein is inclusive of the stated value and means within an acceptable range of deviation for the particular value as determined by one of ordinary skill in the art, considering the measurement in question and the error associated with measurement of the particular quantity (i.e., the limitations of the measurement system). For example, “about” can mean within one or more standard deviations, or within ±30%, 20%, 10%, 5% of the stated value.
As used herein, “Group 1” includes, but is not limited to, Group IA elements of the IUPAC Periodic Table of Elements, for example, Li, Na, K, Rb, and Cs.
As used herein, “Group 2” includes, but is not limited to, Group IIA elements of the IUPAC Periodic Table of Elements, for example, Be, Mg, Ca, Sr, and Ba.
As used herein, “Group 3” includes, but is not limited to, Group IIIB elements of the IUPAC Periodic Table of Elements, for example, Sc, Y, La, and Ac.
As used herein, “Group 4” includes, but is not limited to, Group IVB elements of the IUPAC Periodic Table of Elements, for example, Ti, Zr, and Hf.
As used herein, “Group 5” includes, but is not limited to, Group VB elements of the IUPAC Periodic Table of Elements, for example, V, Nb, and Ta.
As used herein, “Group 6” includes, but is not limited to, Group VIB elements of the IUPAC Periodic Table of Elements, for example, Cr, Mo, and W.
As used herein, “Group 7” includes, but is not limited to, Group VIIB elements of the IUPAC Periodic Table of Elements, for example, Mn, Tc, and Re.
As used herein, “Groups 8 to 10” include, but are not limited to, Group VIIIB elements of the IUPAC Periodic Table of Elements, for example, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, and Pt.
As used herein, “Group 11” includes, but is not limited to, Group IB elements of the IUPAC Periodic Table of Elements, for example, Cu, Ag, and Au.
As used herein, “Group 12” includes, but is not limited to, Group IIB elements of the IUPAC Periodic Table of Elements, for example, Zn, Cd, and Hg.
As used herein, “Group 13” includes, but is not limited to, Group IIIA elements of the IUPAC Periodic Table of Elements, for example, Al, Ga, In, and Tl.
As used herein, “Group 14” includes, but is not limited to, Group IVA elements of the IUPAC Periodic Table of Elements, for example, Si, Ge, Sn, and Pb.
According to an aspect, a light-emitting device includes:
In some embodiments, in the light-emitting device, the interlayer may further include an electron transport region located between the cathode and the emission layer, and a hole transport region located between the emission layer and the anode,
In one or more embodiments, in the light-emitting device, the cathode may comprise the photoacid generator, the electron transport region may comprise the photoacid generator, the emission layer may comprise the photoacid generator, the hole transport region may comprise the photoacid generator, the anode may comprise the photoacid generator, or a combination thereof,
For example, in the light-emitting device, the photoacid generator may be included in the electron transport region, but embodiments are not limited thereto.
For example, the light-emitting device may include the photoacid generating layer, wherein the photoacid generating layer may be: located between the cathode and the electron transport region; located between the electron transport region and the emission layer; located between the emission layer and the hole transport region; located between the hole transport region and the anode; or a combination thereof.
In one or more embodiments, the electron transport region in the light-emitting device may include an electron transport layer, and the electron transport layer may include a metal oxide. The metal oxide may be understood by referring to the description of the metal oxide provided herein.
For example, the electron transport layer in the light-emitting device may include the photoacid generator,
In one or more embodiments, the emission layer in the light-emitting device may include one or more quantum dots. The quantum dot may be understood by referring to the description of the quantum dot provided herein.
In one or more embodiments, the light-emitting device may include a capping layer located outside the cathode or the anode.
A method of manufacturing the light-emitting device includes:
In one or more embodiments, the electron transport region in the light-emitting device may include an electron transport layer, and the electron transport layer may include a metal oxide.
In one or more embodiments, the electron transport layer may include 50 parts by weight of the metal oxide, based on 100 parts by weight of the total electron transport layer. For example, the electron transport layer may essentially consist of the metal oxide and include less than 1 part by weight of impurities, for example, of an organic material.
In one or more embodiments, the metal oxide may include a compound represented by Formula 1:
MxOy Formula 1
wherein, in Formula 1,
In one or more embodiments, in Formula 1, M may include Zn, Ti, W, Sn, In, Nb, Fe, Ce, Sr, Ba, In, Al, Nb, Si, Mg, Ga, or a combination thereof, but embodiments are not limited thereto.
In one or more embodiments, the metal oxide may include a compound represented by Formula 2:
M1αM2βOy Formula 2
wherein, in Formula 2,
In one or more embodiments, in Formula 2, M1 may include Zn, Ti, W, Sn, In, Nb, Fe, Ce, Sr, Ba, In, Al, Nb, or a combination thereof, and
For example, the metal oxide may include ZnO, TiO2, WO3, SnO2, In2O3, Nb2O5, Fe2O3, CeO2, SrTiO3, Zn2SnO4, BaSnO3, In2S3, ZnSiO, Mg-doped ZnO (ZnMgO), Al-doped ZnO (AZO), Ga-doped ZnO (GZO), In-doped ZnO (IZO), Al-doped TiO2, Ga-doped TiO2, In-doped TiO2, Al-doped WO3, Ga-doped WO3, In-doped WO3, Al-doped SnO2, Ga-doped SnO2, In-doped SnO2, Mg-doped In2O3, Al-doped In2O3, Ga-doped In2O3, Mg-doped Nb2O5, Al-doped Nb2O5, Ga-doped Nb2O5, Mg-doped Fe2O3, Al-doped Fe2O3, Ga-doped Fe2O3, In-doped Fe2O3, Mg-doped CeO2, Al-doped CeO2, Ga-doped CeO2, In-doped CeO2, Mg-doped SrTiO3, Al-doped SrTiO3, Ga-doped SrTiO3, In-doped SrTiO3, Mg-doped Zn2SnO4, Al-doped Zn2SnO4, Ga-doped Zn2SnO4, In-doped Zn2SnO4, Mg-doped BaSnO3, Al-doped BaSnO3, Ga-doped BaSnO3, In-doped BaSnO3, Mg-doped In2S3, Al-doped In2S3, Ga-doped In2S3, In-doped In2S3, Mg-doped ZnSiO, Al-doped ZnSiO, Ga-doped ZnSiO, In-doped ZnSiO, or a combination thereof.
For example, the metal oxide may include a zinc-containing oxide. Exemplary zinc-containing oxides may include ZnO, Zn2SnO4, ZnSiO, Mg-doped ZnO (ZnMgO), Al-doped ZnO (AZO), Ga-doped ZnO (GZO), In-doped ZnO (IZO), Mg-doped Zn2SnO4, Al-doped Zn2SnO4, Ga-doped Zn2SnO4, In-doped Zn2SnO4, Mg-doped ZnSiO, Al-doped ZnSiO, Ga-doped ZnSiO, In-doped ZnSiO, or a combination thereof.
The photoacid generator may dissociate protons through photolysis under light irradiation. For example, the photoacid generator may irreversibly dissociate protons. The types of the photoacid generator is not particularly limited.
In one or more embodiments, in the light-emitting device, when the cathode includes the photoacid generator, the electron transport region includes the photoacid generator, the emission layer includes the photoacid generator, the hole transport region includes the photoacid generator, the anode includes the photoacid generator, or a combination thereof includes the photoacid generator, the photoacid generator may be included in an amount of greater than about 0 parts by weight to about 10 parts by weight or less, based on 100 parts of weight of the cathode, based on 100 parts of weight of the electron transport region, based on 100 parts of weight of the emission layer, based on 100 parts of weight of the hole transport region, based on 100 parts of weight of the anode, respectively. For example, the light-emitting device may include greater than about 0 parts by weight to about 10 parts by weight or less of the photoacid generator, based on 100 parts of weight of the cathode, greater than about 0 parts by weight to about 10 parts by weight or less of the photoacid generator, based on 100 parts of weight of the electron transport region, or a combination thereof, but embodiments are not limited thereto.
For example, when the light-emitting device further includes the electron transport region, the electron transport region includes the electron transport layer, and the electron transport layer includes the metal oxide and the photoacid generator,
In one or more embodiments, the electron transport layer may include the metal oxide and the photoacid generator, and a weight ratio of the metal oxide to the photoacid generator (metal oxide: photoacid generator) may be in a range of about 1,000:1 to about 90:1, about 1,000:1 to about 95:1, about 1,000:1 to about 99:1, or about 1,000:1 to about 100:1.
In some embodiments, the photoacid generator may include a compound including an onium ion, a compound including a halogen, a compound including a nitrobenzyl, a compound including a sulfonic acid ester, a compound including a diazomethane, a compound including an oxime, or a combination thereof.
For example, the compound including the onium ion may include a phosphonium ion-containing compound, an oxonium ion-containing compound, a sulfonium ion-containing compound, a fluoronium ion-containing compound, a chloronium ion-containing compound, a bromonium ion-containing compound, an iodonium ion-containing compound, or a combination thereof.
In some embodiments, the photoacid generator may include a compound including a sulfonium ion, a compound including an iodonium ion, a compound including a halogen, a compound including an oxime, or a combination thereof, and the compound including the halogen may be a halogen triazine compound.
For example, the photoacid generator may be:
For example, the photoacid generator may include at least one of Compounds PAG1 to PAG8, but embodiments are not limited thereto:
The light-emitting device according to one or more embodiments may be an inverted light-emitting device including a cathode located or disposed on a substrate and including a photoacid generator. Thus, as influence (e.g., damage) of the emission layer by light irradiation may be reduced, the deterioration of the light-emitting device may be prevented. For example, when the light-emitting device further includes an electron transport layer including metal oxide, and the electron transport layer includes the photoacid generator, as acid is dissociated in the photoacid generator by light irradiation, a defect density of the metal oxide may be reduced, thus improving the electron transport properties. In addition, as the light-emitting device includes a photoacid generator rather than a thermal acid generator, it is not necessary to additionally perform heat treatment, and thus, economic feasibility may be improved due to simplification of the process. Accordingly, the light-emitting device may have a low driving voltage and excellent luminescence efficiency, and the light-emitting device may be used in manufacture of a high-quality electronic apparatus.
As used herein, the expression “(an electron transport region and/or an electron transport layer) includes a photoacid generator” means that the electron transport region and/or the electron transport layer may include one type of a photoacid generator belonging to the photoacid generator or two types of photoacid generators belonging to the photoacid generator.
For example, the electron transport region and/or the electron transport layer may include, as the photoacid generator, Compound PAG1. In this embodiment, Compound PAG1 may be situated in an electron transport layer of the light-emitting device. In some embodiments, the electron transport region may include, as the photoacid generator, Compound PAG1 and Compound PAG2. In this embodiment, Compound PAG1 and Compound PAG2 may be situated in the same layer (for example, both Compound PAG1 and Compound PAG2 may be situated in an electron transport layer), or in different layers (for example, Compound PAG1 may be situated in an electron transport layer, and Compound PAG2 may be situated in an electron injection layer).
The term “interlayer” as used herein refers to a single layer and/or a plurality of all layers located between a cathode and an anode in a light-emitting device.
According to one or more embodiments, an electronic apparatus may include the light-emitting device. The electronic apparatus may further include a thin-film transistor. In some embodiments, the electronic apparatus may further include a thin-film transistor including a source electrode and drain electrode, and a cathode or anode of the light-emitting device may be electrically connected to the source electrode or the drain electrode.
In one or more embodiments, the substrate in the electronic apparatus may include a plurality of sub-pixel areas, and a pixel-defining film may be located between the sub-pixel areas, wherein the photoacid generator may be included in the pixel-defining film, a photoacid generating layer including the photoacid generator may be located on the pixel-defining film, or a combination thereof.
The electronic apparatus may further include a color filter, a color-conversion layer, a touchscreen layer, a polarizing layer, or a combination thereof. The electronic apparatus may be understood by referring to the description of the electronic apparatus provided herein.
Hereinafter, the structure of the light-emitting device 10 according to one or more embodiments and a method of manufacturing the light-emitting device 10 according to one or more embodiments will be described in connection with
The substrate 100 may be any substrate that is used in the related art and may be an inorganic substrate or an organic substrate with high mechanical strength, thermal stability, transparency, surface smoothness, ease of handling, and/or water resistance.
The substrate may be a glass substrate or a plastic substrate. The substrate may be a flexible substrate including plastic having excellent heat resistance and durability, for example, a polyimide, a polyethylene terephthalate (PET), a polycarbonate, a polyethylene naphthalate, polyarylate (PAR), a polyetherimide, or a combination thereof.
The cathode 110 may be formed by depositing or sputtering a material for forming the cathode 110 on the substrate. In one or more embodiments, the cathode 110 may be an electron injection electrode. In this embodiment, a material for forming the cathode 110 may be a material having a low work function, for example, a metal, an alloy, an electrically conductive compound, or a combination thereof.
The cathode 110 may include lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al—Li), calcium (Ca), magnesium-indium (Mg—In), magnesium-silver (Mg—Ag), ytterbium (Yb), silver-ytterbium (Ag—Yb), indium tin oxide (ITO), indium zinc oxide (IZO), or a combination thereof. The cathode 110 may be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode.
The cathode 110 may have a single-layered structure, or a multi-layered structure including two or more layers.
The interlayer 130 may be located on the cathode 110. The interlayer 130 may include an emission layer.
The interlayer 130 may further include an electron transport region located between the first cathode and the emission layer, and a hole transport region located between the emission layer and the anode 150.
The interlayer 130 may further include one or more metal-containing compounds such as an organometallic compound, an inorganic material such as a quantum dot, or the like, in addition to various organic materials.
The interlayer 130 may include: i) at least two emitting units sequentially stacked between the cathode 110 and the anode 150; and ii) a charge generation layer located between the at least two emitting units. When the interlayer 130 includes the at least two emitting units and a charge generation layer, the light-emitting device 10 may be a tandem light-emitting device.
The electron transport region may have i) a single-layered structure consisting of a single layer consisting of a single material, ii) a single-layered structure consisting of a single layer including a plurality of different materials, or iii) a multi-layered structure having a plurality of layers including a plurality of different materials.
The electron transport region may include a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, an electron injection layer, or a combination thereof.
In some embodiments, the electron transport region may have an electron transport layer/electron injection layer structure, a hole blocking layer/electron transport layer/electron injection layer structure, an electron control layer/electron transport layer/electron injection layer structure, or a buffer layer/electron transport layer/electron injection layer structure, wherein layers of each structure are sequentially stacked on the cathode 110 in each stated order.
The electron transport region (e.g., a buffer layer, a hole blocking layer, an electron control layer, or an electron transport layer in the electron transport region) may include a metal-free compound including at least one π electron-deficient nitrogen-containing C1-C60 cyclic group.
In some embodiments, the electron transport region may include a compound represented by Formula 601:
[Ar601]xe11-[(L601)xe1-R601]xe21 Formula 601
wherein, in Formula 601,
For example, in Formula 601, when xe11 is 2 or greater, at least two of Ar601 may be bound to each other via a single bond.
In some embodiments, in Formula 601, Ar601 may be a substituted or unsubstituted anthracene group.
In some embodiments, the electron transport region may include a compound represented by Formula 601-1:
wherein, in Formula 601-1,
For example, in Formulae 601 and 601-1, xe1 and xe611 to xe613 may each independently be 0, 1, or 2.
The electron transport region may include one of Compounds ET1 to ET45, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), tris(8-hydroxy-quinolinato)aluminum (Alq3), bis(2-methyl-8-quinolinolato-N1,O8)-(1,1′-biphenyl-4-olato)aluminum (BAlq), 3-(4-biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole (TAZ), 4-(naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole (NTAZ), or a combination thereof:
The thickness of the electron transport region may be in a range of about 100 angstroms (Å) to about 5,000 Å, and in some embodiments, about 160 Å to about 4,000 Å. When the electron transport region includes a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, or a combination thereof, the thicknesses of the buffer layer, the hole blocking layer, or the electron control layer may each independently be in a range of about 20 Å to about 1,000 Å, for example, about 30 Å to about 300 Å, and the thickness of the electron transport layer may be in a range of about 100 Å to about 1,000 Å, for example, about 150 Å to about 500 Å. When the thicknesses of the buffer layer, the hole blocking layer, the electron control layer, the electron transport layer, and/or the electron transport region are each within these ranges, excellent electron transport characteristics may be obtained without a substantial increase in driving voltage.
The electron transport region (for example, the electron transport layer in the electron transport region) may further include, in addition to the materials described above, a metal-containing material.
The metal-containing material may include an alkali metal complex, an alkaline earth metal complex, or a combination thereof. A metal ion of the alkali metal complex may be a lithium (Li) ion, a sodium (Na) ion, a potassium (K) ion, a rubidium (Rb) ion, or a cesium (Cs) ion. A metal ion of the alkaline earth metal complex may be a beryllium (Be) ion, a magnesium (Mg) ion, a calcium (Ca) ion, a strontium (Sr) ion, or a barium (Ba) ion. Each ligand coordinated with the metal ion of the alkali metal complex and the alkaline earth metal complex may independently be hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene, or a combination thereof.
For example, the metal-containing material may include a Li complex. The Li complex may include, e.g., Compound ET-D1 (LiQ) or Compound ET-D2:
In some embodiments, the electron transport layer may include the metal oxide. For example, the electron transport layer may essentially consist of the metal oxide and include less than 1 part by weight of impurities, for example, an organic material, based on 100 parts by weight of the electron transport layer. The metal oxide may be understood by referring to the description of the metal oxide provided herein.
The electron transport region may include an electron injection layer that facilitates injection of electrons from the anode 150. In some embodiments, the electron injection layer may be in direct contact with the anode 150.
The electron injection layer may have i) a single-layered structure consisting of a single layer consisting of a single material, ii) a single-layered structure consisting of a single layer including a plurality of different materials, or iii) a multi-layered structure having a plurality of layers including a plurality of different materials.
The electron injection layer may include an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or a combination thereof.
The alkali metal may be Li, Na, K, Rb, Cs or a combination thereof. The alkaline earth metal may be Mg, Ca, Sr, Ba, or a combination thereof. The rare earth metal may be Sc, Y, Ce, Tb, Yb, Gd, or a combination thereof.
The alkali metal-containing compound, the alkaline earth metal-containing compound, and the rare earth metal-containing compound may respectively be an oxide, a halide (e.g., fluoride, chloride, bromide, or iodide), a telluride, or a combination thereof of each of the alkali metal, the alkaline earth metal, and the rare earth metal.
The alkali metal-containing compound may be an alkali metal oxide such as Li2O, Cs2O, K2O, or a combination thereof; an alkali metal halide such as LiF, NaF, CsF, KF, LiI, NaI, CsI, KI, or a combination thereof; or a combination thereof. The alkaline earth-metal-containing compound may include an alkaline earth-metal oxide, such as BaO, SrO, CaO, BaxSr1-xO (wherein x is a real number satisfying 0<x<1), BaxCa1-xO (wherein x is a real number satisfying 0<x<1), or a combination thereof. The rare earth metal-containing compound may include YbF3, ScF3, Sc2O3, Y2O3, Ce2O3, GdF3, TbF3, YbI3, ScI3, TbI3, or a combination thereof. In some embodiments, the rare earth metal-containing compound may include a lanthanide metal telluride. Examples of the lanthanide metal telluride may include LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La2Te3, Ce2Te3, Pr2Te3, Nd2Te3, Pm2Te3, Sm2Te3, Eu2Te3, Gd2Te3, Tb2Te3, Dy2Te3, Ho2Te3, Er2Te3, Tm2Te3, Yb2Te3, Lu2Te3, or a combination thereof.
The alkali metal complex, the alkaline earth metal complex, and the rare earth metal complex may include: i) an ion of the alkali metal, alkaline earth metal, and/or rare earth metal described above, and ii) a ligand bonded to the ion, e.g., hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene, or a combination thereof.
The electron injection layer may consist of an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or a combination thereof, as described above. In some embodiments, the electron injection layer may further include an organic material (e.g., a compound represented by Formula 601).
In some embodiments, the electron injection layer may consist of i) an alkali metal-containing compound (e.g., alkali metal halide), or ii) a) an alkali metal-containing compound (e.g., alkali metal halide); and b) an alkali metal, an alkaline earth metal, a rare earth metal, or a combination thereof. In some embodiments, the electron injection layer may be a KI:Yb co-deposition layer, a RbI:Yb co-deposition layer, or the like.
When the electron injection layer further includes an organic material, the alkali metal, the alkaline earth metal, the rare earth metal, the alkali metal-containing compound, the alkaline earth metal-containing compound, the rare earth metal-containing compound, the alkali metal complex, the alkaline earth metal complex, the rare earth metal complex, or a combination thereof may be each independently homogeneously or non-homogeneously dispersed in a matrix including the organic material.
The thickness of the electron injection layer may be in a range of about 1 Å to about 100 Å, and in some embodiments, about 3 Å to about 90 Å. When the thickness of the electron injection layer is within any of these ranges, excellent electron injection characteristics may be obtained without a substantial increase in driving voltage.
When the light-emitting device 10 is a full color light-emitting device, the emission layer may be patterned into a red emission layer, a green emission layer, and/or a blue emission layer, according to a sub-pixel. In one or more embodiments, the emission layer may have a stacked structure. The stacked structure may include two or more layers of a red emission layer, a green emission layer, and a blue emission layer. The two or more layers may be in direct contact with each other. In some embodiments, the two or more layers may be separated from each other. In one or more embodiments, the emission layer may include two or more materials. The two or more materials may include a red light-emitting material, a green light-emitting material, and/or a blue light-emitting material. The two or more materials may be mixed with each other in a single layer. The two or more materials mixed with each other in the single layer may emit white light.
The emission layer may include a host and a dopant. The dopant may be a phosphorescent dopant, a fluorescent dopant, or a combination thereof.
The amount of the dopant in the emission layer may be in a range of about 0.01 parts by weight to about 15 parts by weight based on 100 parts by weight of the host.
In some embodiments, the emission layer may include one or more quantum dots.
The emission layer may include a delayed fluorescence material. The delayed fluorescence material may serve as a host or a dopant in the emission layer.
The thickness of the emission layer may be in a range of about 100 Å to about 1,000 Å, and in some embodiments, about 200 Å to about 600 Å. When the thickness of the emission layer is within any of these ranges, improved luminescence characteristics may be obtained without a substantial increase in driving voltage.
The host may include a compound represented by Formula 301:
[Ar301]xb11-[(L301)xb1-R301]xb21 Formula 301
wherein, in Formula 301,
In some embodiments, when xb11 in Formula 301 is 2 or greater, at least two of Ar301 may be bound via a single bond.
In some embodiments, the host may include a compound represented by Formula 301-1, a compound represented by Formula 301-2, or a combination thereof:
wherein, in Formulae 301-1 to 301-2,
In some embodiments, the host may include an alkaline earth-metal complex, a post-transitional metal complex, or a combination thereof. For example, the host may include a Be complex (e.g., Compound H55), a Mg complex, a Zn complex, or a combination thereof.
In some embodiments, the host may include one of Compounds H1 to H124, 9,10-di(2-naphthyl)anthracene (ADN), 2-methyl-9,10-bis(naphthalen-2-yl)anthracene (MADN), 9,10-di-(2-naphthyl)-2-t-butyl-anthracene (TBADN), 4,4′-bis(N-carbazolyl)-1,1′-biphenyl (CBP), 1,3-di-9-carbazolylbenzene (mCP), 1,3,5-tri(carbazol-9-yl)benzene (TCP), or a combination thereof:
The phosphorescent dopant may include at least one transition metal as a center metal.
The phosphorescent dopant may include a monodentate ligand, a bidentate ligand, a tridentate ligand, a tetradentate ligand, a pentadentate ligand, a hexadentate ligand, or a combination thereof.
The phosphorescent dopant may be electrically neutral.
In some embodiments, the phosphorescent dopant may include an organometallic complex represented by Formula 401:
wherein, in Formulae 401 and 402,
For example, in Formula 402, i) X401 may be nitrogen, and X402 may be carbon, or ii) X401 and X402 may each be nitrogen.
In one or more embodiments, when xc1 in Formula 402 is 2 or greater, two ring A401(5) of at least two L401(5) may optionally be bound via T402 as a linking group, or two ring A402(5) may optionally be bound via T403 as a linking group (see Compounds PD1 to PD4 and PD7). T402 and T403 may each be understood by referring to the description of T401 provided herein.
In Formula 401, L402 may be any suitable organic ligand. For example, L402 may be a halogen group, a diketone group (e.g., an acetylacetonate group), a carboxylic acid group (e.g., a picolinate group), —C(═O), an isonitrile group, —CN, or a phosphorus group (e.g., a phosphine group or a phosphite group).
The phosphorescent dopant may be, for example, one of Compounds PD1 to PD39 or a combination thereof:
The fluorescent dopant may include an amine group-containing compound, a styryl group-containing compound, or a combination thereof.
In some embodiments, the fluorescent dopant may include a compound represented by Formula 501:
wherein, in Formula 501,
In some embodiments, in Formula 501, Ar501 may include a condensed ring group (e.g., an anthracene group, a chrysene group, or a pyrene group) wherein at least three monocyclic groups are condensed.
In some embodiments, xd4 in Formula 501 may be 2.
In some embodiments, the fluorescent dopant may include one of Compounds FD1 to FD36, 4,4′-bis(2,2-diphenylvinyl)-1,1′-biphenyl (DPVBi), 4,4′-bis[4-(di-p-tolylamino)styryl]biphenyl (DPAVBi), or a combination thereof:
The emission layer may include a delayed fluorescence material.
The delayed fluorescence material described herein may be any suitable compound that may emit delayed fluorescence according to a delayed fluorescence emission mechanism.
The delayed fluorescence material included in the emission layer may serve as a host or a dopant, depending on types of other materials included in the emission layer.
In some embodiments, a difference between a triplet energy level (electron Volts (eV)) of the delayed fluorescence material and a singlet energy level (eV) of the delayed fluorescence material may be about 0 eV or greater to about 0.5 eV or less. When the difference between a triplet energy level (eV) of the delayed fluorescence material and a singlet energy level (eV) of the delayed fluorescence material is within this range, up-conversion from a triplet state to a singlet state in the delayed fluorescence material may be effectively occurred, thus improving luminescence efficiency and the like of the light-emitting device 10.
In some embodiments, the delayed fluorescence material may include: i) a material including at least one electron donor (e.g., a π electron-rich C3-C60 cyclic group such as a carbazole group or the like) and at least one electron acceptor (e.g., a sulfoxide group, a cyano group, a π electron-deficient nitrogen-containing C1-C60 cyclic group, or the like), ii) a material including a C8-C60 polycyclic group including at least two cyclic groups condensed to each other and sharing boron (B), or the like.
Examples of the delayed fluorescence material may include at least one of Compounds DF1 to DF9:
The emission layer may include one or more quantum dots (e.g., a plurality of quantum dots).
The term “quantum dot” as used herein refers to a crystal (e.g., a nanocrystal) of a semiconductor compound and may include any suitable material capable of emitting emission wavelengths of various wavelengths according to the size of the crystal.
The diameter of the quantum dot may be, for example, in a range of about 1 nanometer (nm) to about 10 nm.
Quantum dots may be synthesized by a wet chemical process, an organic metal chemical vapor deposition process, a molecular beam epitaxy process, or any similar process.
The wet chemical process is a method of growing a quantum dot particle crystal by mixing a precursor material with an organic solvent. When the crystal grows, the organic solvent may naturally serve as a dispersant coordinated on the surface of the quantum dot crystal and control the growth of the crystal. Thus, the wet chemical method may be easier to perform than the vapor deposition process such a metal organic chemical vapor deposition (MOCVD) or a molecular beam epitaxy (MBE) process. Further, the growth of quantum dot particles may be controlled with a lower manufacturing cost.
The quantum dot may include a group II-VI semiconductor compound; a group III-V semiconductor compound; a group III-VI semiconductor compound; a group I-III-VI semiconductor compound; a group IV-VI semiconductor compound; a group IV element or compound; or a combination thereof.
Examples of the group II-VI semiconductor compound may include a binary compound such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, or a combination thereof; a ternary compound such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, or a combination thereof; a quaternary compound such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, or a combination thereof; or a combination thereof.
Examples of the group III-V semiconductor compound may include a binary compound such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, or a combination thereof; a ternary compound such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, or a combination thereof; a quaternary compound such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, or a combination thereof; or a combination thereof. In some embodiments, the group III-V semiconductor compound may further include a group II element. Examples of the group III-V semiconductor compound further including the group II element may include InZnP, InGaZnP, InAlZnP, or the like, or a combination thereof.
Examples of the III-VI group semiconductor compound may include a binary compound such as GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, InTe, or the like, or a combination thereof; a ternary compound such as InGaS3, InGaSe3, or the like, or a combination thereof; or a combination thereof.
Examples of the group I-III-VI semiconductor compound may include a ternary compound such as AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, AgAlO2, or a combination thereof; or a combination thereof.
Examples of the group IV-VI semiconductor compound may include a binary compound such as SnS, SnSe, SnTe, PbS, PbSe, PbTe, or a combination thereof; a ternary compound such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, or a combination thereof; a quaternary compound such as SnPbSSe, SnPbSeTe, SnPbSTe, or a combination thereof; or a combination thereof.
The group IV element or compound may be a single element material such as Si or Ge; a binary compound such as SiC, SiGe, or a combination thereof; or a combination thereof.
Individual elements included in the multi-element compound, such as a binary compound, a ternary compound, and a quaternary compound, may be present in a particle thereof at a uniform or non-uniform concentration.
The quantum dot may have a single structure in which the concentration of each element included in the quantum dot is uniform or a core-shell double structure. In some embodiments, materials included in the core may be different from materials included in the shell.
The shell of the quantum dot may serve as a protective layer for preventing chemical denaturation of the core to maintain semiconductor characteristics and/or as a charging layer for imparting electrophoretic characteristics to the quantum dot. The shell may be a monolayer or a multilayer. An interface between a core and a shell may have a concentration gradient where a concentration of elements present in the shell decreases toward the core.
Examples of the shell of the quantum dot include metal, metalloid, or nonmetal oxide, a semiconductor compound, or a combination thereof. Examples of the metal, the metalloid, or the nonmetal oxide may include a binary compound such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, or a combination thereof; a ternary compound such as MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, or a combination thereof; or a combination thereof. Examples of the semiconductor compound may include a group II-VI semiconductor compound; a group III-V semiconductor compound; a group III-VI semiconductor compound; a group I-III-VI semiconductor compound; a group IV-VI semiconductor compound; or a combination thereof. In some embodiments, the semiconductor compound may be CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or a combination thereof.
The quantum dot may have a full width of half maximum (FWHM) of a spectrum of an emission wavelength of about 45 nm or less, about 40 nm or less, or about 30 nm or less. Without wishing to be bound to theory, when the FWHM of the quantum dot is within this range, color purity or color reproducibility may be improved. In addition, because light emitted through the quantum dots is emitted in all directions, an optical viewing angle may be improved.
In addition, the quantum dot may be specifically, a spherical, pyramidal, multi-arm, or cubic nanoparticle, nanotube, nanowire, nanofiber, or nanoplate particle.
By adjusting the average particle size of the quantum dot, the energy band gap may also be adjusted, thereby obtaining light of various wavelengths in the quantum dot emission layer. By using quantum dots of various average particle sizes, a light-emitting device that may emit light of various wavelengths may be realized. In some embodiments, the average particle size of the quantum dot may be selected such that the quantum dot may emit a red light, a green light, and/or a blue light. In addition, the average particle size of the quantum dot may be selected such that the quantum dot may emit white light by combining various light colors.
The hole transport region may have i) a single-layered structure consisting of a single layer consisting of a single material, ii) a single-layered structure consisting of a single layer including a plurality of different materials, or iii) a multi-layered structure having a plurality of layers including a plurality of different materials.
The hole transport region may include a hole injection layer, a hole transport layer, an emission auxiliary layer, an electron blocking layer, or a combination thereof.
For example, the hole transport region may have a multi-layered structure, e.g., a hole injection layer/hole transport layer structure, a hole injection layer/hole transport layer/emission auxiliary layer structure, a hole injection layer/emission auxiliary layer structure, a hole transport layer/emission auxiliary layer structure, or a hole injection layer/hole transport layer/electron blocking layer structure, wherein layers of each structure are sequentially stacked on the emission layer in each stated order.
The hole transport region may include the compound represented by Formula 201, the compound represented by Formula 202, or a combination thereof:
wherein, in Formulae 201 and 202,
In some embodiments, Formulae 201 and 202 may each include at least one of groups represented by Formulae CY201 to CY217:
wherein, in Formulae CY201 to CY217, R10b and R10c may each be understood by referring to the descriptions of R10a, ring CY201 to ring CY204 may each independently be a C3-C20 carbocyclic group or a C1-C20 heterocyclic group, and at least one hydrogen in Formulae CY201 to CY217 may be unsubstituted or substituted with R10a.
In one or more embodiments, in Formulae CY201 to CY217, ring CY201 to ring CY204 may each independently be a benzene (e.g., a phenyl) group, a naphthalene group, a phenanthrene group, or an anthracene group.
In one or more embodiments, Formulae 201 and 202 may each include at least one of the groups represented by Formulae CY201 to CY203.
In one or more embodiments, Formula 201 may include at least one of the groups represented by Formulae CY201 to CY203, and at least one of the groups represented by Formulae CY204 to CY217.
In one or more embodiments, in Formula 201, xa1 may be 1, R201 may be represented by one of Formulae CY201 to CY203, xa2 may be 0, and R202 may be represented by one of Formulae CY204 to CY207.
In one or more embodiments, Formulae 201 and 202 may each not include groups represented by Formulae CY201 to CY203.
In one or more embodiments, Formulae 201 and 202 may each not include groups represented by Formulae CY201 to CY203, and include at least one of groups represented by Formulae CY204 to CY217.
In one or more embodiments, Formulae 201 and 202 may each not include groups represented by Formulae CY201 to CY217.
In some embodiments, the hole transport region may include one of Compounds HT1 to HT46, 4,4′,4″-tris(3-methylphenylphenylamino)triphenylamine (m-MTDATA), 4,4′,4″-tris(N,N-diphenylamino)triphenylamine (TDATA), 4,4′,4″-tris{N-(2-naphthyl)-N-phenylamino}-triphenylamine (2-TNATA), N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine (NPB)(NPD), β-NPB, N,N′-bis(3-methylphenyl)-N, N′-diphenyl-[1,1-biphenyl]-4,4′-diamine (TPD), spiro-TPD, spiro-NPB, methylated-NPB, 4,4′-cyclohexylidene bis[N,N-bis(4-methylphenyl)benzenamine] (TAPC), 4,4′-bis[N, N′-(3-tolyl)amino]-3,3′-dimethylbiphenyl (HMTPD), 4,4′,4″-tris(N-carbazolyl)triphenylamine (TCTA), polyaniline/dodecylbenzenesulfonic acid (PANI/DBSA), poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) (PEDOT/PSS), polyaniline/camphorsulfonic acid (PANI/CSA), polyaniline/poly(4-styrenesulfonate (PANI/PSS), or a combination thereof:
The thickness of the hole transport region may be in a range of about 50 Å to about 10,000 Å, and in some embodiments, about 100 Å to about 4,000 Å. When the hole transport region includes a hole injection layer, a hole transport layer, or a combination thereof, the thickness of the hole injection layer may be in a range of about 100 Å to about 9,000 Å, and in some embodiments, about 100 Å to about 1,000 Å, and the thickness of the hole transport layer may be in a range of about 50 Å to about 2,000 Å, and in some embodiments, about 100 Å to about 1,500 Å. When the thicknesses of the hole transport region, the hole injection layer, and the hole transport layer are within any of these ranges, excellent hole transport characteristics may be obtained without a substantial increase in driving voltage.
The emission auxiliary layer may increase light emission efficiency by compensating for an optical resonance distance according to the wavelength of light emitted by an emission layer. The electron blocking layer may prevent leakage of electrons to a hole transport region from the emission layer. Materials that may be included in the hole transport region may also be included in an emission auxiliary layer and an electron blocking layer.
p-Dopant
The hole transport region may include a charge generating material as well as the aforementioned materials to improve conductive properties of the hole transport region. The charge generating material may be substantially homogeneously or non-homogeneously dispersed (for example, as a single layer consisting of charge generating material) in the hole transport region.
The charge generating material may include, for example, a p-dopant.
In some embodiments, a lowest unoccupied molecular orbital (LUMO) energy level of the p-dopant may be about −3.5 eV or less.
In some embodiments, the p-dopant may include a quinone derivative, a compound containing a cyano group, a compound containing element EL1 and element EL2, or a combination thereof.
Examples of the quinone derivative may include 7,7,8,8-tetracyanoquinodimethane (TCNQ), 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ), or the like.
Examples of the compound containing a cyano group include 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT-CN), a compound represented by Formula 221, or the like:
wherein, in Formula 221,
In the compound containing element EL1 and element EL2, element EL1 may be a metal, a metalloid, or a combination thereof, and element EL2 may be non-metal, a metalloid, or a combination thereof.
Examples of the metal may include: an alkali metal (e.g., lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), or the like, or a combination thereof); an alkaline earth metal (e.g., beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), or the like, or a combination thereof); a transition metal (e.g., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), or the like, or a combination thereof); post-transition metal (e.g., zinc (Zn), indium (In), tin (Sn), or the like, or a combination thereof); a lanthanide metal (e.g., lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), or the like, or a combination thereof); or the like, or a combination thereof.
Examples of the metalloid may include silicon (Si), antimony (Sb), tellurium (Te), or the like, or a combination thereof.
Examples of the non-metal may include oxygen (O), halogen (e.g., F, Cl, Br, I, or the like, or a combination thereof), or the like, or a combination thereof.
For example, the compound containing element EL1 and element EL2 may include a metal oxide, a metal halide (e.g., metal fluoride, metal chloride, metal bromide, metal iodide, or the like, or a combination thereof), a metalloid halide (e.g., a metalloid fluoride, a metalloid chloride, a metalloid bromide, a metalloid iodide, or the like, or a combination thereof), a metal telluride, or a combination thereof.
Examples of the metal oxide may include a tungsten oxide (e.g., WO, W2O3, WO2, WO3, W2O5, or the like), a vanadium oxide (e.g., VO, V2O3, VO2, V2O5, or the like), a molybdenum oxide (MoO, Mo2O3, MoO2, MoO3, Mo2O5, or the like), a rhenium oxide (e.g., ReO3, or the like), a niobium oxide, a tantalum oxide, a titanium oxide, a zinc oxide, a nickel oxide, a copper oxide, a cobalt oxide, a manganese oxide, a chromium oxide, an indium oxide, or the like, or a combination thereof.
Examples of the metal halide may include alkali metal halide, alkaline earth metal halide, transition metal halide, post-transition metal halide, lanthanide metal halide, or the like, or a combination thereof.
Examples of the alkali metal halide may include LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI, RbI, CsI, or the like, or a combination thereof.
Examples of the alkaline earth metal halide may include BeF2, MgF2, CaF2, SrF2, BaF2, BeCl2, MgCl2, CaCl2), SrCl2, BaCl2, BeBr2, MgBr2, CaBr2, SrBr2, BaBr2, Belt, Mgl2, CaI2, SrI2, BaI2, or the like, or a combination thereof.
Examples of the transition metal halide may include a titanium halide (e.g., TiF4, TiCl4, TiBr4, TiI4, or the like, or a combination thereof), a zirconium halide (e.g., ZrF4, ZrCl4, ZrBr4, ZrI4, or the like, or a combination thereof), a hafnium halide (e.g., HfF4, HfCl4, HfBr4, HfI4, or the like, or a combination thereof), a vanadium halide (e.g., VF3, VCl3, VBr3, VI3, or the like, or a combination thereof), a niobium halide (e.g., NbF3, NbCl3, NbBr3, NbI3, or the like, or a combination thereof), a tantalum halide (e.g., TaF3, TaCl3, TaBr3, TaI3, or the like, or a combination thereof), a chromium halide (e.g., CrF3, CrCl3, CrBr3, CrI3, or the like, or a combination thereof), a molybdenum halide (e.g., MoF3, MoCl3, MoBr3, MoI3, or the like, or a combination thereof), a tungsten halide (e.g., WF3, WCl3, WBr3, WI3, or the like, or a combination thereof), a manganese halide (e.g., MnF2, MnCl2, MnBr2, MnI2, or the like, or a combination thereof), a technetium halide (e.g., TcF2, TcCl2, TcBr2, TcI2, or the like, or a combination thereof), a rhenium halide (e.g., ReF2, ReCl2, ReBr2, ReI2, or the like, or a combination thereof), an iron halide (e.g., FeF2, FeCl2, FeBr2, FeI2, or the like, or a combination thereof), a ruthenium halide (e.g., RuF2, RuCl2, RuBr2, RuI2, or the like, or a combination thereof), an osmium halide (e.g., OsF2, OsCl2, OsBr2, OsI2, or the like, or a combination thereof), a cobalt halide (e.g., CoF2, CoCl2, CoBr2, CoI2, or the like, or a combination thereof), a rhodium halide (e.g., RhF2, RhCl2, RhBr2, RhI2, or the like, or a combination thereof), an iridium halide (e.g., IrF2, IrCl2, IrBr2, IrI2, or the like, or a combination thereof), a nickel halide (e.g., NiF2, NiCl2, NiBr2, NiI2, or the like, or a combination thereof), a palladium halide (e.g., PdF2, PdCl2, PdBr2, PdI2, or the like, or a combination thereof), a platinum halide (e.g., PtF2, PtCl2, PtBr2, PtI2, or the like, or a combination thereof), a copper halide (e.g., CuF, CuCl, CuBr, CuI, or the like, or a combination thereof), a silver halide (e.g., AgF, AgCl, AgBr, AgI, or the like, or a combination thereof), a gold halide (e.g., AuF, AuCl, AuBr, AuI, or the like, or a combination thereof), or the like, or a combination thereof.
Examples of the post-transition metal halide may include a zinc halide (e.g., ZnF2, ZnCl2, ZnBr2, ZnI2, or the like, or a combination thereof), an indium halide (e.g., InI3, or the like, or a combination thereof), a tin halide (e.g., SnI2, or the like, or a combination thereof), or the like, or a combination thereof.
Examples of the lanthanide metal halide may include YbF, YbF2, YbF3, SmF3, YbCl, YbCl2, YbCl3 SmCl3, YbBr, YbBr2, YbBr3 SmBr3, YbI, YbI2, YbI3, SmI3, or the like, or a combination thereof.
Examples of the metalloid halide may include an antimony halide (e.g., SbCl5, or the like, or a combination thereof).
Examples of the metal telluride may include an alkali metal telluride (e.g., Li2Te, Na2Te, K2Te, Rb2Te, Cs2Te, or the like, or a combination thereof), an alkaline earth metal telluride (e.g., BeTe, MgTe, CaTe, SrTe, BaTe, or the like, or a combination thereof), a transition metal telluride (e.g., TiTe2, ZrTe2, HfTe2, V2Te3, Nb2Te3, Ta2Te3, Cr2Te3, Mo2Te3, W2Te3, MnTe, TcTe, ReTe, FeTe, RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu2Te, CuTe, Ag2Te, AgTe, Au2Te, or the like, or a combination thereof), a post-transition metal telluride (e.g., ZnTe, or the like, or a combination thereof), a lanthanide metal telluride (e.g., LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, or the like, or a combination thereof).
The anode 150 may be on the interlayer 130.
The anode 150 may include an anode material that may be a high work function material that may easily inject holes.
The anode 150 may be a reflective electrode, a semi-transmissive electrode, or a transmissive electrode. When the anode 150 is a transmissive electrode, a material for forming the anode 150 may be indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), or a combination thereof. In some embodiments, when the anode 150 is a semi-transmissive electrode or a reflective electrode, magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al—Li), calcium (Ca), magnesium-indium (Mg—In), magnesium-silver (Mg—Ag), or a combination thereof may be used as a material for forming the anode 150.
The anode 150 may have a single-layered structure consisting of a single layer or a multi-layered structure including two or more layers. In some embodiments, the anode 150 may have a triple-layered structure of ITO/Ag/ITO.
A first capping layer may be located outside the cathode 110, and/or a second capping layer may be located outside the anode 150. In some embodiments, the light-emitting device 10 may have a structure in which the first capping layer, the cathode 110, the interlayer 130, and the anode 150 are sequentially stacked in this stated order, a structure in which the cathode 110, the interlayer 130, the anode 150, and the second capping layer are sequentially stacked in this stated order, or a structure in which the first capping layer, the cathode 110, the interlayer 130, the anode 150, and the second capping layer are sequentially stacked in this stated order.
In the light-emitting device 10, light emitted from the emission layer in the interlayer 130 may pass through the cathode 110 (which may be a semi-transmissive electrode or a transmissive electrode) and through the first capping layer to the outside. In the light-emitting device 10, light emitted from the emission layer in the interlayer 130 may pass through the anode 150 (which may be a semi-transmissive electrode or a transmissive electrode) and through the second capping layer to the outside.
The first capping layer and the second capping layer may improve the external luminescence efficiency based on the principle of constructive interference. Accordingly, the optical extraction efficiency of the light-emitting device 10 may be increased, thus improving the luminescence efficiency of the light-emitting device 10.
The first capping layer and the second capping layer may each include a material having a refractive index of about 1.6 or greater (at 589 nm).
The first capping layer and the second capping layer may each independently be a capping layer including an organic material, an inorganic capping layer including an inorganic material, or an organic-inorganic composite capping layer including an organic material and an inorganic material.
At least one of the first capping layer and the second capping layer may each independently include carbocyclic compounds, heterocyclic compounds, amine group-containing compounds, porphine derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, alkali metal complexes, alkaline earth metal complexes, or a combination thereof. The carbocyclic compound, the heterocyclic compound, and the amine group-containing compound may optionally be substituted with a substituent of O, N, S, Se, Si, F, Cl, Br, I, or a combination thereof. In some embodiments, at least one of the first capping layer and the second capping layer may each independently include an amine group-containing compound.
In some embodiments, at least one of the first capping layer and the second capping layer may each independently include the compound represented by Formula 201, the compound represented by Formula 202, or a combination thereof.
In one or more embodiments, at least one of the first capping layer and the second capping layer may each independently include one of Compounds HT28 to HT33, one of Compounds CP1 to CP7, β-NPB, or a combination thereof:
The light-emitting device may be included in various electronic apparatuses. In some embodiments, an electronic apparatus including the light-emitting device may be a light-emitting apparatus or an authentication apparatus.
The electronic apparatus (e.g., a light-emitting apparatus) may further include, in addition to the light-emitting device, i) a color filter, ii) a color-conversion layer, or iii) a color filter and a color-conversion layer. The color filter and/or the color-conversion layer may be disposed on at least one traveling direction of light emitted from the light-emitting device. For example, light emitted from the light-emitting device may be a blue light or a white light. The light-emitting device may be understood by referring to the descriptions provided herein. In some embodiments, the color-conversion layer may include one or more quantum dots. The quantum dots may be, for example, the quantum dots as described herein.
The electronic apparatus may include a first substrate. The first substrate may include a plurality of sub-pixel areas, the color filter may include a plurality of color filter areas respectively corresponding to the plurality of sub-pixel areas, and the color-conversion layer may include a plurality of color-conversion areas respectively corresponding to the plurality of sub-pixel areas.
A pixel-defining film may be located between the plurality of sub-pixel areas to define each sub-pixel area.
The color filter may further include a plurality of color filter areas and light-blocking patterns between the plurality of color filter areas, and the color-conversion layer may further include a plurality of color-conversion areas and light-blocking patterns between the plurality of color-conversion areas.
The plurality of color filter areas (or a plurality of color-conversion areas) may include: a first area emitting a first color light; a second area emitting a second color light; and/or a third area emitting a third color light, and the first color light, the second color light, and/or the third color light may have different maximum emission wavelengths. In some embodiments, the first color light may be a red light, the second color light may be a green light, and the third color light may be a blue light. In some embodiments, the plurality of color filter areas (or the plurality of color-conversion areas) may each include one or more quantum dots. In some embodiments, the first area may include one or more red quantum dots, the second area may include one or more green quantum dots, and the third area may not include a quantum dot. The quantum dots may be understood by referring to the description of the quantum dots as provided herein. The first area, the second area, and/or the third area may each further include an emitter.
In some embodiments, the light-emitting device may emit a first light, the first area may absorb the first light to emit 1-1 color light, the second area may absorb the first light to emit 2-1 color light, and the third area may absorb the first light to emit 3-1 color light. In this embodiment, the 1-1 color light, the 2-1 color light, and the 3-1 color light may each have a different maximum emission wavelength. In some embodiments, the first light may be a blue light, the 1-1 color light may be a red light, the 2-1 color light may be a green light, and the 3-1 light may be a blue light.
The electronic apparatus may further include a thin-film transistor, in addition to the light-emitting device. The thin-film transistor may include a source electrode, a drain electrode, and an active layer, wherein one of the source electrode and the drain electrode may be electrically connected to one of the cathode and the anode of the light-emitting device.
The thin-film transistor may further include a gate electrode, a gate insulating film, or the like.
The active layer may include a crystalline silicon, an amorphous silicon, an organic semiconductor, an oxide semiconductor, or a combination thereof.
The electronic apparatus may further include an encapsulation unit for sealing the light-emitting device. The encapsulation unit may be located between the color filter and/or the color-conversion layer and the light-emitting device. The encapsulation unit may allow light to pass to the outside from the light-emitting device and prevent the air and moisture to permeate to the light-emitting device at the same time. The encapsulation unit may be a sealing substrate including transparent glass or a plastic substrate. The encapsulation unit may be a thin-film encapsulating layer including at least one of an organic layer and/or an inorganic layer. When the encapsulation unit is a thin-film encapsulating layer, the electronic apparatus may be flexible.
In addition to the color filter and/or the color-conversion layer, various functional layers may be disposed on the encapsulation unit depending on the use of an electronic apparatus. Examples of the functional layer may include a touch screen layer, a polarizing layer, or the like. The touch screen layer may be a resistive touch screen layer, a capacitive touch screen layer, or an infrared beam touch screen layer. The authentication apparatus may be, for example, a biometric authentication apparatus that identifies an individual according to biometric information (e.g., a fingertip, a pupil, or the like).
The authentication apparatus may further include a biometric information collecting unit, in addition to the light-emitting device described above.
The electronic apparatus may be applicable to various displays, an optical source, lighting, a personal computer (e.g., a mobile personal computer), a cellphone, a digital camera, an electronic note, an electronic dictionary, an electronic game console, a medical device (e.g., an electronic thermometer, a blood pressure meter, a glucometer, a pulse measuring device, a pulse wave measuring device, an electrocardiograph recorder, an ultrasonic diagnosis device, or an endoscope display device), a fish finder, various measurement devices, gauges (e.g., gauges of an automobile, an airplane, or a ship), and a projector.
An emission apparatus in
The substrate 100 may be a flexible substrate, a glass substrate, or a metal substrate. A buffer layer 210 may be located on the substrate 100. The buffer layer 210 may prevent penetration of impurities through the substrate 100 and provide a flat surface on the substrate 100.
A thin-film transistor may be on the buffer layer 210. The thin-film transistor may include an active layer 220, a gate electrode 240, a source electrode 260, and a drain electrode 270.
The active layer 220 may include an inorganic semiconductor such as silicon or polysilicon, an organic semiconductor, or an oxide semiconductor and include a source area, a drain area, and a channel area.
A gate insulating film 230 for insulating the active layer 220 and the gate electrode 240 may be on the active layer 220, and the gate electrode 240 may be on the gate insulating film 230.
An interlayer insulating film 250 may be on the gate electrode 240. The interlayer insulating film 250 may be between the gate electrode 240 and the source electrode 260 and between the gate electrode 240 and the drain electrode 270 to provide insulation therebetween.
The source electrode 260 and the drain electrode 270 may be on the interlayer insulating film 250. The interlayer insulating film 250 and the gate insulating film 230 may be formed to expose the source area and the drain area of the active layer 220, and the source electrode 260 and the drain electrode 270 may be adjacent to the exposed source area and the exposed drain area of the active layer 220.
Such a thin-film transistor may be electrically connected to a light-emitting device to drive the light-emitting device and may be protected by a passivation layer 280. The passivation layer 280 may include an inorganic insulating film, an organic insulating film, or a combination thereof. A light-emitting device may be located on the passivation layer 280. The light-emitting device 10 may include the cathode 110, the interlayer 130, and the anode 150.
The cathode 110 may be located on the passivation layer 280. The passivation layer 280 may not fully cover the drain electrode 270 and expose a specific area of the drain electrode 270, and the cathode 110 may be disposed to connect to the exposed area of the drain electrode 270.
A pixel-defining film 290 may be on the cathode 110. The pixel-defining film 290 may expose a specific area of the first electrode 110, and the interlayer 130 may be formed in the exposed area of the cathode 110. The pixel-defining film 290 may be a polyimide or poly(acryl) organic film. Although it is not shown in
The anode 150 may be on the interlayer 130, and a capping layer 170 may be additionally formed on the anode 150. The capping layer 170 may be formed to cover the anode 150.
The encapsulation unit 300 may be on the capping layer 170. The encapsulation unit 300 may be on the light-emitting device to protect a light-emitting device from moisture or oxygen. The encapsulation unit 300 may include: an inorganic film including a silicon nitride (SiNx), a silicon oxide (SiOx), a indium tin oxide, a indium zinc oxide, or a combination thereof; an organic film including a PET, a poly(ethylene naphthalate), a polycarbonate, a polyimide, a poly(ethylene sulfonate), a poly(oxymethylene), a poly(arylate), hexamethyldisiloxane, an acrylic resin (e.g., polymethyl methacrylate, polyacrylic acid, or the like), an epoxy resin (e.g., aliphatic glycidyl ether (AGE) or the like), or a combination thereof; or a combination of the inorganic film and the organic film.
The emission apparatus shown in
The layers constituting the hole transport region, the emission layer, and the layers constituting the electron transport region may be formed in a specific region by using one or more suitable methods such as vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) deposition, ink-jet printing, laser printing, and laser-induced thermal imaging.
When the layers constituting the hole transport region, the emission layer, and the layers constituting the electron transport region are each formed by vacuum deposition, the vacuum deposition may be performed at a deposition temperature in a range of about 100° C. to about 500° C. at a vacuum degree in a range of about 10-8 torr to about 10-3 torr, and at a deposition rate in a range of about 0.01 Angstroms per second (A/sec) to about 100 Å/sec, depending on the material to be included in each layer and the structure of each layer to be formed.
The term “C3-C60 carbocyclic group” as used herein refers to a cyclic group consisting of carbon atoms only and having 3 to 60 carbon atoms as ring-forming atoms. The term “C1-C60 heterocyclic group” as used herein refers to a cyclic group having 1 to 60 carbon atoms in addition to at least one heteroatom selected from N, O, Si, P, Ge, Se, and S as ring-forming atoms other than carbon atoms. The C3-C60 carbocyclic group and the C1-C60 heterocyclic group may each be a monocyclic group consisting of one ring or a polycyclic group in which at least two rings are condensed.
The term “cyclic group” as used herein may include the C3-C60 carbocyclic group and the C1-C60 heterocyclic group.
The term “π electron-rich C3-C60 cyclic group” refers to a cyclic group having 3 to 60 carbon atoms and not including *—N=*′ as a ring-forming moiety. The term “π electron-deficient nitrogen-containing C1-C60 cyclic group” as used herein refers to a heterocyclic group having 1 to 60 carbon atoms and *—N=*′ as a ring-forming moiety.
In some embodiments,
The term “cyclic group”, “C3-C60 carbocyclic group”, “C1-C60 heterocyclic group”, “π electron-rich C3-C60 cyclic group”, or “π electron-deficient nitrogen-containing C1-C60 cyclic group” as used herein may be a group condensed with any suitable cyclic group, a monovalent group, or a polyvalent group (e.g., a divalent group, a trivalent group, a quadrivalent group, or the like), depending on the structure of the formula to which the term is applied. For example, a “benzene group” may be a benzene ring, a phenyl group, a phenylene group, or the like, and this may be understood by one of ordinary skill in the art, depending on the structure of the formula including the “benzene group”.
In some embodiments, examples of the monovalent C3-C60 carbocyclic group and monovalent C1-C60 heterocyclic group may include a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group, and examples of the divalent C3-C60 carbocyclic group and the monovalent C1-C60 heterocyclic group may include a C3-C10 cycloalkylene group, a C1-C10 heterocycloalkylene group, a C3-C10 cycloalkenylene group, a C1-C10 heterocycloalkenylene group, a C6-C60 arylene group, a C1-C60 heteroarylene group, a divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group.
The term “C1-C60 alkyl group” as used herein refers to a linear or branched aliphatic hydrocarbon monovalent group having 1 to 60 carbon atoms, and non-limiting examples thereof include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, an isobutyl group, a tert-butyl group, an n-pentyl group, a tert-pentyl group, a neopentyl group, an isopentyl group, a sec-pentyl group, a 3-pentyl group, a sec-isopentyl group, an n-hexyl group, an isohexyl group, a sec-hexyl group, a tert-hexyl group, an n-heptyl group, an isoheptyl group, a sec-heptyl group, a tert-heptyl group, an n-octyl group, an isooctyl group, a sec-octyl group, a tert-octyl group, an n-nonyl group, an iso-nonyl group, a sec-nonyl group, a tert-nonyl group, an n-decyl group, an isodecyl group, a sec-decyl group, and a tert-decyl group. The term “C1-C60 alkylene group” as used herein refers to a divalent group having substantially the same structure as the C1-C60 alkyl group.
The term “C2-C60 alkenyl group” as used herein refers to a hydrocarbon group having at least one carbon-carbon double bond in the middle or at the terminus of the C2-C60 alkyl group. Non-limiting examples thereof include an ethenyl group, a propenyl group, and a butenyl group. The term “C2-C60 alkenylene group” as used herein refers to a divalent group having substantially the same structure as the C2-C60 alkenyl group.
The term “C2-C60 alkynyl group” as used herein refers to a monovalent hydrocarbon group having at least one carbon-carbon triple bond in the middle or at the terminus of the C2-C60 alkyl group. Non-limiting examples thereof include an ethynyl group and a propynyl group. The term “C2-C60 alkynylene group” as used herein refers to a divalent group having substantially the same structure as the C2-C60 alkynyl group.
The term “C1-C60 alkoxy group” as used herein refers to a monovalent group represented by —OA101 (wherein A101 is a C1-C60 alkyl group). Non-limiting examples thereof include a methoxy group, an ethoxy group, and an isopropyloxy group.
The term “C3-C10cycloalkyl group” as used herein refers to a monovalent saturated hydrocarbon monocyclic group including 3 to 10 carbon atoms. Non-limiting examples of the C3-C10 cycloalkyl group as used herein include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, an adamantanyl group, a norbornanyl (bicyclo[2.2.1]heptyl) group, a bicyclo[1.1.1]pentyl group, a bicyclo[2.1.1]hexyl group, or a bicyclo[2.2.2]octyl group. The term “C3-C10 cycloalkylene group” as used herein refers to a divalent group having substantially the same structure as the C3-C10 cycloalkyl group.
The term “C1-C10 heterocycloalkyl group” as used herein refers to a monovalent cyclic group including at least one heteroatom other than carbon atoms as a ring-forming atom and having 1 to 10 carbon atoms. Non-limiting examples thereof include a 1,2,3,4-oxatriazolidinyl group, a tetrahydrofuranyl group, and a tetrahydrothiophenyl group. The term “C1-C10 heterocycloalkylene group” as used herein refers to a divalent group having substantially the same structure as the C1-C10 heterocycloalkyl group.
The term “C3-C10 cycloalkenyl group” as used herein refers to a monovalent cyclic group that has 3 to 10 carbon atoms and at least one carbon-carbon double bond in its ring, and is not aromatic. Non-limiting examples thereof include a cyclopentenyl group, a cyclohexenyl group, and a cycloheptenyl group. The term “C3-C10 cycloalkenylene group” as used herein refers to a divalent group having substantially the same structure as the C3-C10 cycloalkenyl group.
The term “C1-C10 heterocycloalkenyl group” as used herein refers to a monovalent cyclic group including at least one heteroatom other than carbon atoms as a ring-forming atom, 1 to 10 carbon atoms, and at least one double bond in its ring. Non-limiting examples of the C1-C10 heterocycloalkenyl group include a 4,5-dihydro-1,2,3,4-oxatriazolyl group, a 2,3-dihydrofuranyl group, and a 2,3-dihydrothiophenyl group. The term “C1-C10 heterocycloalkylene group” as used herein refers to a divalent group having substantially the same structure as the C1-C10 heterocycloalkenyl group.
The term “C6-C60 aryl group” as used herein refers to a monovalent group having a carbocyclic aromatic system having 6 to 60 carbon atoms. The term “C6-C60 arylene group” as used herein refers to a divalent group having a carbocyclic aromatic system having 6 to 60 carbon atoms. Non-limiting examples of the C6-C60 aryl group include a phenyl group, a pentalenyl group, a naphthyl group, an azulenyl group, an indacenyl group, an acenaphthyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a heptalenyl group, a naphthacenyl group, a picenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, and an ovalenyl group. When the C6-C60 aryl group and the C6-C60 arylene group each independently include two or more rings, the respective rings may be fused.
The term “C1-C60 heteroaryl group” as used herein refers to a monovalent group having a heterocyclic aromatic system further including at least one heteroatom other than carbon atoms as a ring-forming atom and 1 to 60 carbon atoms. The term “C1-C60 heteroarylene group” as used herein refers to a divalent group having a heterocyclic aromatic system further including at least one heteroatom other than carbon atoms as a ring-forming atom and 1 to 60 carbon atoms. Non-limiting examples of the C1-C60 heteroaryl group include a pyridinyl group, a pyrimidinyl group, a pyrazinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, a benzoquinolinyl group, an isoquinolinyl group, a benzoisoquinolinyl group, a quinoxalinyl group, a benzoquinoxalinyl group, a quinazolinyl group, a benzoquinazolinyl group, a cinnolinyl group, a phenanthrolinyl group, a phthalazinyl group, and a naphthyridinyl group. When the C1-C60 heteroaryl group and the C1-C60 heteroarylene group each independently include two or more rings, the respective rings may be fused.
The term “monovalent non-aromatic condensed polycyclic group” as used herein refers to a monovalent group that has two or more condensed rings and only carbon atoms (e.g., 8 to 60 carbon atoms) as ring forming atoms, wherein the molecular structure when considered as a whole is non-aromatic. Non-limiting examples of the monovalent non-aromatic condensed polycyclic group include an indenyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, an indenophenanthrenyl group, and an indenoanthracenyl group. The term “divalent non-aromatic condensed polycyclic group” as used herein refers to a divalent group having substantially the same structure as the monovalent non-aromatic condensed polycyclic group.
The term “monovalent non-aromatic condensed heteropolycyclic group” as used herein refers to a monovalent group that has two or more condensed rings and at least one heteroatom other than carbon atoms (e.g., 1 to 60 carbon atoms), as a ring-forming atom, wherein the molecular structure when considered as a whole is non-aromatic. Non-limiting examples of the monovalent non-aromatic condensed heteropolycyclic group include a pyrrolyl group, a thiophenyl group, a furanyl group, an indolyl group, a benzoindolyl group, a naphthoindolyl group, an isoindolyl group, a benzoisoindolyl group, a naphthoisoindolyl group, a benzosilolyl group, a benzothiophenyl group, a benzofuranyl group, a carbazolyl group, a dibenzosilolyl group, a dibenzothiophenyl group, a dibenzofuranyl group, an azacarbazolyl group, an azafluorenyl group, an azadibenzosilolyl group, an azadibenzothiophenyl group, an azadibenzofuranyl group, a pyrazolyl group, an imidazolyl group, a triazolyl group, a tetrazolyl group, an oxazolyl group, an isoxazolyl group, a thiazolyl group, an isothiazolyl group, an oxadiazolyl group, a thiadiazolyl group, a benzopyrazolyl group, a benzimidazolyl group, a benzoxazolyl group, a benzothiazolyl group, a benzoxadiazolyl group, a benzothiadiazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, an imidazotriazinyl group, an imidazopyrazinyl group, an imidazopyridazinyl group, an indenocarbazolyl group, an indolocarbazolyl group, a benzofurocarbazolyl group, a benzothienocarbazolyl group, a benzosilolocarbazolyl group, a benzoindolocarbazolyl group, a benzocarbazolyl group, a benzonaphthofuranyl group, a benzonaphthothiophenyl group, a benzonaphthosilolyl group, a benzofurodibenzofuranyl group, a benzofurodibenzothiophenyl group, and a benzothienodibenzothiophenyl group. The term “divalent non-aromatic condensed heteropolycyclic group” as used herein refers to a divalent group having substantially the same structure as the monovalent non-aromatic condensed heteropolycyclic group.
The term “C6-C60 aryloxy group” as used herein refers to —OA102 (wherein A102 is a C6-C60 aryl group). The term “C6-C60 arylthio group” as used herein refers to —SA103 (wherein A103 is a C6-C60 aryl group).
The term “C1-C60 heteroaryloxy group” as used herein indicates —OA102′ (wherein A102′ is a C1-C60 heteroaryl group). The term “C1-C60 heteroarylthio group” as used herein indicates —SA103′ (wherein A103 is a C1-C60 heteroaryl group).
The term “C7-C60 aryl alkyl group” as used herein refers to -A104A105(wherein A104 is a C1-C54 alkyl group, and A105 is a C6-C59 aryl group). The term “C2-C60 heteroaryl alkyl group” as used herein refers to -A106A107 (wherein A106 is a C1-C59 alkyl group, and A107 is a C1-C59 heteroaryl group).
The term “C2-C60 alkyl heteroaryl group” as used herein refers to a C1-C60 heteroaryl group substituted with at least one C1-C60 alkyl group. The term “C2-C60 heteroaryl alkyl group” as used herein refers to a C1-C60 alkyl group substituted with at least one C1-C60 heteroaryl group.
The term “R10a” as used herein may be:
The term “heteroatom” as used herein refers to any atom other than a carbon atom. Examples of the heteroatom may include O, S, N, P, Si, B, Ge, Se, or a combination thereof.
A third-row transition metal as used herein may include hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au), or a combination thereof.
“Ph” used herein represents a phenyl group, “Me” used herein represents a methyl group, “Et” used herein represents an ethyl group, “tert-Bu” or “But” used herein represents a tert-butyl group, and “OMe” used herein represents a methoxy group.
The term “biphenyl group” as used herein refers to a phenyl group substituted with a phenyl group. The “biphenyl group” belongs to “a substituted phenyl group” having a “C6-C60 aryl group” as a substituent.
The term “terphenyl group” as used herein refers to a phenyl group substituted with a biphenyl group. The “terphenyl group” belongs to “a substituted phenyl group” having a “C6-C60 aryl group substituted with a C6-C60 aryl group” as a substituent.
The symbols * and *′ as used herein, unless defined otherwise, refer to a binding site to an adjacent atom in a corresponding formula or moiety.
Hereinafter, a light-emitting device and a compound according to one or more embodiments will be described in more detail with reference to Examples. The wording “B was used instead of A” used in describing Examples means that an amount of B used was identical to an amount of A used in terms of molar equivalents.
As a cathode, a glass substrate on which ITO were deposited was cut to a size of 50 millimeters (mm)×50 mm×0.7 mm, sonicated in isopropyl alcohol and deionized (DI) water for 5 minutes in each solvent, cleaned with ultraviolet rays for 30 minutes, and then ozone, and the glass substrate was mounted on a vacuum deposition apparatus.
A solution including ZnMgO and Compound PAG1 at a weight ratio of 99:1 was coated on the ITO electrode, followed by light irradiation, thereby forming an electron transport layer having a thickness of 480 Å.
An emission layer having a thickness of 200 Å and including InP/ZnSe/ZnS core-shell quantum dots was formed on the electron transport layer.
A hole transport layer having a thickness of 400 Å and including HT45 was formed on the emission layer, and then a hole injection layer having a thickness of 1,700 Å and including TCNQ was formed.
Ag was deposited on the hole injection layer to form an anode having a thickness of 1,000 Å, and CP7 was vacuum-deposited on the anode to form a capping layer having a thickness of 550 Å, thereby completing the manufacture of a light-emitting device.
A light-emitting device was manufactured in a similar manner as in Example 1, except that ZnMgO and Compound PAG8 were used instead of ZnMgO and Compound PAG1 to form the electron transport layer.
A light-emitting device was manufactured in a similar manner as in Example 1, except that ZnMgO was used instead of ZnMgO and Compound PAG1 to form the electron transport layer.
The driving voltage at a current density of 10 mA/cm2, driving voltage at a required luminance (610 candela per square meter, cd/m2), luminescence efficiency (candela per ampere, cd/A), external quantum efficiency (%), full width at half maximum (nm), color-coordinates (CIE_x, CIE_y), and maximum emission wavelength (λmax) of the light-emitting devices manufactured in Examples 1 and 2 and Comparative Example 1 were measured by a current voltmeter (Keithley SMU 236), luminance meter PR650, and Hamamatsu Absolute PL Measurement System C9920-2-12. The results thereof are shown in Tables 1 and 2.
In addition, the measured value of the current density according to the operating voltage is shown in
As shown in Tables 1 and 2 and
As apparent from the foregoing detailed description, as the light-emitting device may include a photoacid generator to prevent deterioration of the light-emitting device, the light-emitting device may be used to manufacture a high-quality electronic apparatus having a low driving voltage and excellent luminescence efficiency.
It should be understood that exemplary embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each exemplary embodiment should typically be considered as available for other similar features or aspects in other exemplary embodiments. While one or more exemplary embodiments have been described with reference to the figures, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope as defined by the following claims.
| Number | Date | Country | Kind |
|---|---|---|---|
| 10-2022-0028960 | Mar 2022 | KR | national |
