Patent Application
20230301134
This application claims priority to and benefits of Korean Patent Application No. 10-2022-0007353 under 35 U.S.C. §119 filed on Jan. 18, 2022, in the Korean Intellectual Property Office (KIPO), the entire contents of which are incorporated herein by reference.
The disclosure relates to a light-emitting device and an electronic apparatus including the same.
Organic light-emitting devices among light-emitting devices are self-emissive devices that have wide viewing angles, high contrast ratios, short response times, and excellent characteristics in terms of luminance, driving voltage, and response speed, compared to devices in the art.
Organic light-emitting devices may include a first electrode located on a substrate, and a hole transport region, an emission layer, an electron transport region, and a second electrode sequentially stacked each other on the first electrode. Holes provided from the first electrode move toward the emission layer through the hole transport region, and electrons provided from the second electrode move toward the emission layer through the electron transport region. Carriers, such as holes and electrons, recombine in the emission layer to produce excitons. The excitons may transition from an excited state to a ground state, thus generating light.
It is to be understood that this background of the technology section is, in part, intended to provide useful background for understanding the technology. However, this background of the technology section may also include ideas, concepts, or recognitions that were not part of what was known or appreciated by those skilled in the pertinent art prior to a corresponding effective filing date of the subject matter disclosed herein.
Embodiments relate to a light-emitting device with excellent luminescence efficiency and a long lifespan.
Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the presented embodiments of the disclosure.
According to embodiments, provided is a light-emitting device that may include a first electrode,
In an embodiment, the electron blocking layer may directly contact the first emission layer, the first emission layer may directly contact the second emission layer, the second emission layer may directly contact the hole blocking layer, or any combination thereof.
In an embodiment, the refractory index of the electron blocking layer and the refractive index of the hole blocking layer measured at a wavelength of 450 nm may each independently be in a range of about 1.70 to about 1.90.
In an embodiment, the refractive index of the first emission layer and the refractive index of the second emission layer measured at a wavelength of 450 nm may each independently be in a range of about 1.70 to about 2.30.
In an embodiment, the refractive index of the first emission layer measured at a wavelength of 450 nm may be in a range of about 1.85 to about 2.30.
In an embodiment, the refractive index of the second emission layer may be equal to or greater than the refractive index of the first emission layer.
In an embodiment, the first emission layer and the second emission layer may each independently emit blue light having a maximum emission wavelength in a range of about 450 nm to about 490 nm.
In an embodiment, the first emission layer may include a first host and a first dopant, the second emission layer may include a second host and a second dopant, and the first host and the second host may be different from each other.
In an embodiment, the electron blocking layer may include an arylamine-containing compound.
In an embodiment, the first emission layer may include a first host and a first dopant, and the first host may include a pyrene-containing compound; the second emission layer may include a second host and a second dopant, and the second host may include an anthracene-containing compound; or a combination thereof.
In an embodiment, the hole blocking layer may include a triazine-containing compound.
According to embodiments, provided is a light-emitting device that may include a first electrode,
In an embodiment, a maximum luminescence wavelength of light emitted from at least one of the m emitting parts may be different from a maximum emission wavelength of light emitted from at least one of the remaining emitting parts.
In an embodiment, at least one of the m emitting parts may emit blue light having a maximum emission wavelength in a range of about 410 nm to about 490 nm.
In an embodiment, at least one of the m emitting parts may emit green light having a maximum emission wavelength in a range of about 490 nm to about 580 nm.
In an embodiment, at least one of the m emitting parts may include quantum dots.
According to embodiments, provided is a light-emitting device that may include
In an embodiment, the first emission layer may include a first a emission layer located on the first subpixel and emitting first color light, a first b emission layer located on the second subpixel and emitting second color light, and a first c emission layer located on the third subpixel and emitting third color light. The second emission layer may include a second a emission layer located on the first subpixel and emitting first color light, a second b emission layer located on the second subpixel and emitting second color light, and a second c emission layer located on the third subpixel and emitting third color light. The first color light may be red light, the second color light may be green light, and the third color light may be blue light.
According to embodiments, provided is an electronic apparatus that may include the light-emitting device.
According to embodiments, provided is an electronic apparatus that may include the light-emitting device located on a substrate, and a color filter located on at least one direction in which light emitted from the light-emitting device travels, wherein the color filter may include quantum dots.
It is to be understood that the embodiments above are described in a generic and explanatory sense only and not for the purpose of limitation, and the disclosure is not limited to the embodiments described above.
The above and other aspects and features of the disclosure will be more apparent by describing in detail embodiments thereof with reference to the accompanying drawings, in which:
The disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which embodiments are shown. This disclosure may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
In the drawings, the sizes, thicknesses, ratios, and dimensions of the elements may be exaggerated for ease of description and for clarity. Like numbers refer to like elements throughout.
In the description, it will be understood that when an element (or region, layer, part, etc.) is referred to as being “on”, “connected to”, or “coupled to” another element, it can be directly on, connected to, or coupled to the other element, or one or more intervening elements may be present therebetween. In a similar sense, when an element (or region, layer, part, etc.) is described as “covering” another element, it can directly cover the other element, or one or more intervening elements may be present therebetween.
In the description, when an element is “directly on,” “directly connected to,” or “directly coupled to” another element, there are no intervening elements present. For example, “directly on” may mean that two layers or two elements are disposed without an additional element such as an adhesion element therebetween.
As used herein, the expressions used in the singular such as “a,” “an,” and “the,” are intended to include the plural forms as well, unless the context clearly indicates otherwise.
As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items. For example, “A and/or B” may be understood to mean “A, B, or A and B.” The terms “and” and “or” may be used in the conjunctive or disjunctive sense and may be understood to be equivalent to “and/or”.
In the specification and the claims, the term “at least one of” is intended to include the meaning of “at least one selected from the group of” for the purpose of its meaning and interpretation. For example, “at least one of A and B” may be understood to mean “A, B, or A and B.” When preceding a list of elements, the term, “at least one of,” modifies the entire list of elements and does not modify the individual elements of the list.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. Thus, a first element could be termed a second element without departing from the teachings of the disclosure. Similarly, a second element could be termed a first element, without departing from the scope of the disclosure.
The spatially relative terms “below”, “beneath”, “lower”, “above”, “upper”, or the like, may be used herein for ease of description to describe the relations between one element or component and another element or component as illustrated in the drawings. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation, in addition to the orientation depicted in the drawings. For example, in the case where a device illustrated in the drawing is turned over, the device positioned “below” or “beneath” another device may be placed “above” another device. Accordingly, the illustrative term “below” may include both the lower and upper positions. The device may also be oriented in other directions and thus the spatially relative terms may be interpreted differently depending on the orientations.
The terms “about” or “approximately” as used herein is inclusive of the stated value and means within an acceptable range of deviation for the recited value as determined by one of ordinary skill in the art, considering the measurement in question and the error associated with measurement of the recited quantity (i.e., the limitations of the measurement system). For example, “about” may mean within one or more standard deviations, or within ±20%, ±10%, or ±5% of the stated value.
It should be understood that the terms “comprises,” “comprising,” “includes,” “including,” “have,” “having,” “contains,” “containing,” and the like are intended to specify the presence of stated features, integers, steps, operations, elements, components, or combinations thereof in the disclosure, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.
Unless otherwise defined or implied herein, all terms (including technical and scientific terms) used have the same meaning as commonly understood by those skilled in the art to which this disclosure pertains. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and should not be interpreted in an ideal or excessively formal sense unless clearly defined in the specification.
According to embodiments, a light-emitting device may include: a first electrode;
In an embodiment, in the light-emitting device, the refractive indices of the electron blocking layer and the hole blocking layer measured at a wavelength of 450 nm may each independently be about 1.70 or more and about 1.90 or less. For example, in the light-emitting device, the refractive indices of the electron blocking layer and the hole blocking layer at a wavelength of 450 nm may each independently be about 1.70 or more and about 1.85 or less, about 1.70 or more and about 1.80 or less, about 1.70 or more and about 1.73 or less, about 1.73 or more and about 1.77 or less, or about 1.77 or more and about 1.80 or less.
In an embodiment, in the light-emitting device, the refractive index of the electron blocking layer and the refractive index of the hole blocking layer may be identical to each other.
In an embodiment, in the light-emitting device, the refractive index of the first emission layer and the refractive index of the second emission layer measured at a wavelength of 450 nm may each independently be in a range of about 1.70 to about 2.30. For example, in the light-emitting device, the refractive index of the first emission layer and the refractive index of the second emission layer may each independently be in a range of about 1.75 to about 2.20, in a range of about 1.75 to about 2.10, or in a range of about 1.75 to about 2.00.
In an embodiment, the refractive index of the first emission layer of the light-emitting device may be in a range of about 1.85 to about 2.30. For example, the refractive index of the first emission layer may be in a range of about 1.85 to about 2.20.
In an embodiment, the refractive index of the second emission layer of the light-emitting device may be in a range of about 1.85 to about 2.30. For example, the refractive index of the second emission layer may be in a range of about 1.85 to about 2.20.
In an embodiment, in the light-emitting device, the refractive index of the second emission layer may be equal to or greater than the refractive index of the first emission layer.
In an embodiment, in the light-emitting device, the refractive index of the second emission layer may be smaller than the refractive index of the first emission layer.
In an embodiment, in the light-emitting device, the first emission layer and the second emission layer may each independently emit blue light having a maximum emission wavelength in a range of about 450 nm to about 490 nm.
In an embodiment, in the light-emitting device, the first emission layer may include a first host and a first dopant, the second emission layer may include a second host and a second dopant, and the first host and the second host may be different from each other. The first host and the second host may each be the same as in the description of the host in the specification, and the first dopant and the second dopant may each be the same as in the description of the dopant in the specification.
In an embodiment, the electron blocking layer of the light-emitting device may include an arylamine-containing compound. For example, the arylamine-containing compound may be an organic compound including an arylamine group. The arylamine-containing compound may be a compound represented by Formula 201, a compound represented by Formula 202, or any combination thereof, which will be described later, and at least one of R201 to R203 in Formula 201 and R201 to R204 in Formula 202 may be a C6-C60 aryl group unsubstituted or substituted with at least one R10a. For example, the arylamine-containing compound may further include a carbazole group. For example, the arylamine-containing compound may be 4,4′,4″-tris(N-carbazolyl)triphenylamine (TCTA), but is not limited thereto.
In an embodiment, in the light-emitting device, the first emission layer may include a first host and a first dopant, and the first host may include a pyrene-containing compound;
For example, the pyrene-containing compound may be an organic compound including a pyrene group. For example, the pyrene-containing compound may be a compound represented by Formula 301 to be described later, and Ar301 in Formula 301 may be a pyrene group unsubstituted or substituted with at least one R10a. For example, the pyrene-containing compound may be one of Compounds 1-1 to 1-18 and H29 to H35, but is not limited thereto:
For example, the anthracene-containing compound may be an organic compound including an anthracene group. In an embodiment, the anthracene-containing compound may be an anthracene-containing compound substituted with at least one deuterium. For example, the anthracene-containing compound may be a compound represented by Formula 301 to be described later, and Ar301 in Formula 301 may be an anthracene group unsubstituted or substituted with at least one R10a. For example, Ar301 in Formula 301 may be an anthracene group substituted with at least one R10a and at least one R10a is deuterium. For example, the anthracene-containing compound may be one of Compounds 2-1 to 2-3, H1 to H26, and H56 to H120, but is not limited thereto:
In an embodiment, the hole blocking layer of the light-emitting device may include a triazine-containing compound. For example, the triazine-containing compound may be an organic compound including a triazine group. For example, the triazine-containing compound may be a compound represented by Formula 601 to be described later, and Ar601 in Formula 601 may be a triazine group unsubstituted or substituted with at least one R10a. For example, the triazine-containing compound may be one of Compounds ET25 to ET28, ET30, ET37 to ET39, and ET46 to ET48, but is not limited thereto:
In an embodiment, the first electrode in the light-emitting device may be an anode,
In the light-emitting device, because the refractive index of the first emission layer may be greater than the refractive index of the hole transport region, and the refractive index of the second emission layer may be equal to or greater than the refractive index of the electron transport region, a phenomenon in which light generated from the emission layer (first emission layer and/or second emission layer) is lost by waveguide mode may be reduced, thereby increasing light emission efficiency. This is because the lower the refractive index is, the lesser light generated from the emission layer is lost in a horizontal direction by waveguide mode. Because light emission efficiency increases, luminescence efficiency of the light-emitting device (for example, external quantum efficiency) may be improved.
Because the refractive index of the electron blocking layer and the refractive index of the hole blocking layer of the light-emitting device may each independently be about 1.70 or more, the amount of light trapped within the device may be reduced and thus heat may be reduced, thereby increasing stability and lifespan of the device.
Accordingly, the light-emitting device may have excellent luminescence efficiency and a long lifespan, and thus may be used for manufacturing a high-quality electronic apparatus.
According to embodiments, a light-emitting device may include: a first electrode;
A number, m, of the emitting parts, may vary according to the purpose, and the upper limit of the number is not particularly limited. In an embodiment, the light-emitting device may include 2, 3, 4, 5, or 6 emitting parts. An emitting part herein is not particularly limited as long as the emitting part has a function capable of emitting light. In an embodiment, an emitting part may include one or more emission layers. In case that it is necessary, the emitting part may further include an organic layer other than the emission layer.
The emission layer located in the m emitting parts may each independently emit red light, green light, blue light, and/or white light. For example, of the m emitting parts, an emission layer included in a emitting parts may emit blue light, an emission layer included in b emitting parts may emit red light, an emission layer included in c emitting parts may emit green light, and an emission layer included in d emitting parts may emit white light. a, b, c, and d may be each an integer or 0 or more, and a sum of a, b, c, and d may be m. For example, emission layers included in a emitting parts of the m emitting parts may each emit blue light, and the blue light may each independently have a maximum emission wavelength in a range of about 400 nm to about 490 nm, based on a front peak wavelength. For example, at least one of the emission layers included in the a emitting parts may emit blue light, and the maximum emission wavelength of blue light may be in a range of about 400 nm to about 490 nm.
At least one of the emitting part of the m emitting parts may include a first emission layer and a second emission layer. In an embodiment, the first emission layer and the second emission layer may each independently emit red light, green light, blue light, and/or white light. For example, the first emission layer and the second emission layer may each emit blue light, and the maximum emission wavelength of blue light may be in a range of about 400 nm to about 490 nm.
In an embodiment, the maximum emission wavelength of light emitted from at least one of the m emitting parts may be different from the maximum emission wavelength of light emitted from another one of the remaining emitting parts. In an embodiment, in a light-emitting device in which the first emitting part and the second emitting part are stacked each other, a maximum luminescence wavelength of light emitted from the first emitting part may be different from a maximum luminescence wavelength of light emitted from the second emitting part. An emission layer of the first emitting part and an emission layer of the second emitting part each independently may have i) a single-layered structure consisting of a single layer consisting of a single material, ii) a single-layer structure consisting of a single layer consisting of a multiple different materials, and iii) a multi-layered structure having multiple layers consisting of multiple different materials. Accordingly, the light emitted from the first emitting part or the second emitting part may be a single-color light or a mixed-color light.
For example, at least one of the m emitting parts may emit blue light having a maximum emission wavelength in a range of about 410 nm to about 490 nm. For example, at least one of the m emitting parts may emit green light having a maximum emission wavelength in a range of about 490 nm to about 580 nm.
In an embodiment, in a light-emitting device in which a first emitting part, a second emitting part, and a third emitting part are stacked each other, the maximum emission wavelength of light emitted from the first emitting part may be the same as the maximum emission wavelength of light emitted from the second emitting part but different from the maximum emission wavelength of light emitted from the third emitting part. In an embodiment, the maximum emission wavelength of light emitted from the first emitting part, the maximum emission wavelength of light emitted from the second emitting part, and the maximum emission wavelength of light emitted from the third emitting part may be different from one another.
In an embodiment, in case that m is 4, the light-emitting device may be a device in which a first emitting part, a second emitting part, a third emitting part, and a fourth emitting part are stacked each other, the first emitting part to the third emitting part may each emit blue light, and the fourth emitting part may emit green light.
In an embodiment, the maximum emission wavelength of light emitted from at least one of the m emitting parts may be identical to the maximum emission wavelength of light emitted from another one of the remaining emitting parts.
In an embodiment, m emission layers included in the m emitting parts may each independently include a phosphorescent dopant, a fluorescence dopant, a delayed fluorescence material, or any combination thereof. The phosphorescent dopant, the fluorescence dopant, and the delayed fluorescence material may be respectively the same as the phosphorescent dopant, the fluorescence dopant, and the delayed fluorescence material as described herein.
In embodiments, all the m emission layers may include: a phosphorescent dopant; a fluorescence dopant; or a delayed fluorescence material.
In embodiments, at least one of the m emission layers may include a phosphorescent dopant and the remaining emission layers may include a fluorescence dopant. In embodiments, at least one of the m emission layers may include a phosphorescent dopant and the remaining emission layers may include a delayed fluorescence material. In embodiments, at least one of the m emission layers may include a fluorescence dopant and the remaining emission layers may include a delayed fluorescence material.
In embodiments, at least one of the m emission layers may include a phosphorescent dopant, at least one of the m emission layers may include a fluorescence dopant, and the remaining emission layers may include a delayed fluorescence material.
In an embodiment, at least one of the m emitting parts may include a quantum dot. For example, the quantum dot may be included in at least one emission layer among the m emission layers included in the m emitting parts.
A charge generation layer may be included between two neighboring ones of the m emitting parts, and “neighboring” may refer to the arrangement relationship of layers that are closest to each other among other layers. In an embodiment, the “two neighboring emitting parts” may refer to the location relationship of two emitting parts located closest to each other from multiple emitting parts. The “neighboring” may refer to a case where two layers are physically in contact with each other, or a case where a third layer is located between the two layers. For example, the “emitting part neighboring to a second electrode” may refer to an emitting part located closest to the second electrode. Also, the second electrode and the emitting part may be in physical contact. In an embodiment, however, other layers other than the emitting part may be located between the second electrode and the emitting part. In an embodiment, an electron transport layer may be located between the second electrode and the emitting part. However, a charge generation layer may be also located between two neighboring emitting parts.
The “charge generation layer” may generate electrons with respect to an emitting part of two neighboring emitting parts and thus acts as a cathode, and may generate holes with respect to another emitting part and thus acts as an anode. The charge generation layer may be not directly connected to an electrode, and may separate neighboring emitting parts. A light-emitting device including m emitting parts may contain m-1 charge generation layers.
Each of the m-1 charge generation layers may include an n-type charge generation layer and a p-type charge generation layer. The n-type charge generation layer and the p-type charge generation layer may directly contact with each other to form an NP junction. By the NP junction, electrons and holes may be simultaneously generated between the n-type charge generation layer and the p-type charge generation layer. The generated electrons may be transferred to one of the two neighboring emitting parts through the n-type charge generation layer. The generated holes may be transferred to another one of the two neighboring emitting parts through the p-type charge generation layer. Because the charge generation layers each include an n-type charge generation layer and a p-type charge generation layer, a light-emitting device including m-1 charge generation layers may include m-1 n-type charge generation layers and m-1 p-type charge generation layers.
The n-type may have n-type semiconductor characteristics, for example, the characteristics of injecting or transporting electrons. The p-type may have p-type semiconductor characteristics, for example, the characteristics of injecting or transporting holes.
The m emitting parts may further include a hole transport region located between the first electrode and the emission layer and an electron transport region located between the emission layer and the second electrode. For example, of the m emitting parts, a emitting parts may further include a hole transport region and an electron transport region, and b emitting parts may include: a hole transport region including an electron blocking layer; a first emission layer located between the electron blocking layer and the second electrode; a second emission layer located between the first emission layer and the second electrode; and an electron transport region located between the second emission layer and the second electrode and including a hole blocking layer. a may be an integer of 1 or more, b may be an integer of 0 or more, and the sum of a and b may be m. The hole transport region and the electron transport region may each be the same as described herein.
In embodiments, a light-emitting device may include: multiple first electrodes located on a first subpixel, a second subpixel, and a third subpixel;
In an embodiment, in the light-emitting device,
In an embodiment, the m emitting parts may further include a hole transport region and an electron transport region.
In an embodiment, the hole transport region may be located between emission layers in the form of a common layer, and the electron transport region may be located between the emission layer and the second electrode in the form of a common layer.
In an embodiment, the first electrode of the light-emitting device may be an anode, and the second electrode of the light-emitting device may be a cathode.
In an embodiment, the light-emitting device may include a capping layer located outside of the first electrode or outside of the second electrode. Details on the quantum dots may be the same as described herein.
In embodiments, an electronic apparatus may include a light-emitting device. The electronic apparatus may further include a thin-film transistor. For example, the electronic apparatus may further include a thin-film transistor including a source electrode and a drain electrode, wherein the first electrode of the light-emitting device may be electrically connected to the source electrode or the drain electrode of the thin-film transistor. In an embodiment, the electronic apparatus may further include a color filter, a color conversion layer, a touch screen layer, a polarizing layer, or any combination thereof.
An electronic apparatus may include: the light-emitting device located on a substrate, and a color filter located on at least one direction in which light emitted from the light-emitting device travels, wherein the color filter includes a quantum dot. For more details on the electronic apparatus, related descriptions provided herein may be referred to.
Hereinafter, the structure of the light-emitting device 10 according to an embodiment and a method of manufacturing the light-emitting device 10 will be described with reference to
In
The first electrode 110 may be formed by, for example, depositing or sputtering a material for forming the first electrode 110 on the substrate. In case that the first electrode 110 is an anode, a material for forming the first electrode 110 may be a high-work function material that facilitates injection of holes.
The first electrode 110 may be a reflective electrode, a semi-transmissive electrode, or a transmissive electrode. In case that the first electrode 110 is a transmissive electrode, a material for forming the first electrode 110 may include indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), or any combination thereof. In embodiments, in case that the first electrode 110 is a semi-transmissive electrode or a reflective electrode, a material for forming the first electrode 110 may include magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al—Li), calcium (Ca), magnesium-indium (Mg—In), magnesium-silver (Mg—Ag), or any combination thereof.
The first electrode 110 may have a single-layered structure consisting of a single layer or a multi-layered structure including multiple layers. For example, the first electrode 110 may have a three-layered structure of ITO/Ag/ITO.
The interlayer 150 is located on the first electrode 110. The interlayer 150 may include: a hole transport region 140 including an electron blocking layer; a first emission layer 152 located between the electron blocking layer and the second electrode 190; a second emission layer 154 located between the first emission layer 152 and the second electrode 190; and an electron transport region 160 located between the second emission layer 154 and the second electrode 190 and including a hole blocking layer.
The interlayer 150 may further include metal-containing compounds such as organometallic compounds, inorganic materials such as quantum dots, and the like, in addition to various organic materials.
In embodiments, the interlayer 150 may include, i) two or more emitting parts sequentially stacked each other between the first electrode 110 and the second electrode 190, and ii) a charge generation layer located between the two or more emitting parts. In case that the interlayer 150 includes the emitting parts and the charge generation layer as described above, the light-emitting device 10 may be a tandem light-emitting device.
The hole transport region 140 may include an electron blocking layer.
The hole transport region 140 may have: i) a single-layered structure consisting of a single layer consisting of a single material; ii) a single-layered structure consisting of a single layer consisting of multiple different materials; or iii) a multi-layered structure including multiple layers including different materials.
The hole transport region 140 may further include a hole injection layer, a hole transport layer, an emission auxiliary layer, or any combination thereof.
For example, the hole transport region 140 may have a multi-layered structure including a hole injection layer/hole transport layer/electron blocking layer structure, a hole injection layer/hole transport layer/emission auxiliary layer/electron blocking layer structure, a hole injection layer/emission auxiliary layer/electron blocking layer structure, a hole transport layer/emission auxiliary layer/electron blocking layer structure, or a hole injection layer/hole transport layer/electron blocking layer structure, wherein in each structure, layers are stacked each other sequentially from the first electrode 110.
The hole transport region may include a compound represented by Formula 201, a compound represented by Formula 202, or any combination thereof:
[00179] wherein in Formulae 201 and 202,
For example, each of Formulae 201 and 202 may include at least one of groups represented by Formulae CY201 to CY217.
In Formulae CY201 to CY217, R10b and R10c may each be the same as described with respect to R10a, ring CY201 to ring CY204 may each independently be a C3-C20 carbocyclic group or a C1-C20 heterocyclic group, and at least one hydrogen in Formulae CY201 to CY217 may be unsubstituted or substituted with R10a as described above.
In an embodiment, ring CY201 to ring CY204 in Formulae CY201 to CY217 may each independently be a benzene group, a naphthalene group, a phenanthrene group, or an anthracene group.
In embodiments, each of Formulae 201 and 202 may include at least one of groups represented by Formulae CY201 to CY203.
In embodiments, Formula 201 may include at least one of the groups represented by Formulae CY201 to CY203 and at least one of the groups represented by Formulae CY204 to CY217.
In embodiments, in Formula 201, xa1 may be 1, R201 may be a group represented by one of Formulae CY201 to CY203, xa2 may be 0, and R202 may be a group represented by one of Formulae CY204 to CY207.
In embodiments, each of Formulae 201 and 202 may not include a group represented by one of Formulae CY201 to CY203.
In embodiments, each of Formulae 201 and 202 may not include a group represented by one of Formulae CY201 to CY203, and may include at least one of the groups represented by Formulae CY204 to CY217.
In embodiments, each of Formulae 201 and 202 may not include a group represented by one of Formulae CY201 to CY217.
In embodiments, the hole transport region 140 may include one of Compounds HT1 to HT47 and m-MTDATA, TDATA, 2-TNATA, NPB (NPD), β-NPB, TPD, spiro-TPD, spiro-NPB, methylated-NPB, TAPC, HMTPD, 4,4′,4″-tris(N-carbazolyl)triphenylamine (TCTA), polyaniline/dodecylbenzenesulfonic acid (PANI/DBSA), poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) (PEDOT/PSS), polyaniline/camphorsulfonic acid (PANI/CSA), polyaniline/poly(4-styrenesulfonate (PANI/PSS), or any combination thereof:
The hole transport region 140 may have a thickness in a range of about 50 Å to about 10,000 Å, for example, about 100 Å to about 4,000 Å. In case that the hole transport region includes a hole injection layer, a hole transport layer, or any combination thereof, a thickness of the hole injection layer may be in a range of about 100 Å to about 9,000 Å, for example, about 100 Å to about 1,000 Å, and a thickness of the hole transport layer may be in a range of about 50 Å to about 2,000 Å, for example, about 100 Å to about 1,500 Å. In case that the thicknesses of the hole transport region, the hole injection layer, and the hole transport layer are within these ranges, satisfactory hole transporting characteristics may be obtained without a substantial increase in driving voltage.
The emission auxiliary layer may increase light-emission efficiency by compensating for an optical resonance distance according to the wavelength of light emitted by an emission layer, and the electron blocking layer may block the leakage of electrons from an emission layer to a hole transport region. Materials that may be included in the hole transport region may be included in the emission auxiliary layer and the electron blocking layer.
The hole transport region 140 may further include, in addition to the materials as described above, a charge-generation material for the improvement of conductive characteristics. The charge-generation material may be uniformly or non-uniformly dispersed in the hole transport region 140 (for example, in the form of a single layer consisting of a charge generation material).
The charge-generation material may be, for example, a p-dopant.
For example, the lowest unoccupied molecular orbital (LUMO) energy level of the p-dopant may be about -3.5 eV or less.
In embodiments, the p-dopant may include a quinone derivative, a cyano group-containing compound, a compound including element EL1 and element EL2, or any combination thereof.
Examples of the quinone derivative may include TCNQ, F4-TCNQ, etc.
Examples of the cyano group-containing compound may include HAT-CN, and a compound represented by Formula 221:
In Formula 221,
For example, the compound represented by Formula 221 may be Compound P1:
In the compound including element EL1 and element EL2, element EL1 may be metal, metalloid, or any combination thereof, and element EL2 may be non-metal, metalloid, or any combination thereof.
Examples of the metal may include an alkali metal (for example, lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), etc.); alkaline earth metal (for example, beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), etc.); transition metal (for example, titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), etc.); post-transition metal (for example, zinc (Zn), indium (In), tin (Sn), etc.); and lanthanide metal (for example, lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc.).
Examples of the metalloid may include silicon (Si), antimony (Sb), and tellurium (Te).
Examples of the non-metal may include oxygen (O) and a halogen (for example, F, Cl, Br, I, etc.).
Examples of the compound including element EL1 and element EL2 may include metal oxide, metal halide (for example, metal fluoride, metal chloride, metal bromide, or metal iodide), metalloid halide (for example, metalloid fluoride, metalloid chloride, metalloid bromide, or metalloid iodide), metal telluride, or any combination thereof.
Examples of the metal oxide may include tungsten oxide (for example, WO, W2O3, WO2, WO3, W2O5, etc.), vanadium oxide (for example, VO, V2O3, VO2, V2O5, etc.), molybdenum oxide (MoO, Mo2O3, MoO2, MoO3, Mo2O5, etc.), and rhenium oxide (for example, ReO3, etc.).
Examples of the metal halide may include alkali metal halide, alkaline earth metal halide, transition metal halide, post-transition metal halide, and lanthanide metal halide.
Examples of the alkali metal halide may include LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, Lil, NaI, KI, RbI, and CsI.
Examples of the alkaline earth metal halide may include BeF2, MgF2, CaF2, SrF2, BaF2, BeCl2, MgCl2, CaCl2, SrCl2, BaCl2, BeBr2, MgBr2, CaBr2, SrBr2, BaBr2, BeI2, MgI2, CaI2, SrI2, and BaI2
Examples of the transition metal halide may include titanium halide (for example, TiF4, TiCl4, TiBr4, TiI4, etc.), zirconium halide (for example, ZrF4, ZrCl4, ZrBr4, ZrI4, etc.), hafnium halide (for example, HfF4, HfCl4, HfBr4, HfI4, etc.), vanadium halide (for example, VF3, VCl3, VBr3, VI3, etc.), niobium halide (for example, NbF3, NbCl3, NbBr3, NbI3, etc.), tantalum halide (for example, TaF3, TaCl3, TaBr3, TaI3, etc.), chromium halide (for example, CrF3, CrCl3, CrBr3, CrI3, etc.), molybdenum halide (for example, MoF3, MoCl3, MoBr3, MoI3, etc.), tungsten halide (for example, WF3, WCl3, WBr3, WI3, etc.), manganese halide (for example, MnF2, MnCl2, MnBr2, MnI2, etc.), technetium halide (for example, TcF2, TcCl2, TcBr2, TcI2, etc.), rhenium halide (for example, ReF2, ReCl2, ReBr2, ReI2, etc.), iron halide (for example, FeF2, FeCl2, FeBr2, FeI2, etc.), ruthenium halide (for example, RuF2, RuCl2, RuBr2, RuI2, etc.), osmium halide (for example, OsF2, OsCl2, OsBr2, Osl2, etc.), cobalt halide (for example, CoF2, CoCl2, CoBr2, CoI2, etc.), rhodium halide (for example, RhF2, RhCl2, RhBr2, RhI2, etc.), iridium halide (for example, IrF2, IrCl2, IrBr2, IrI2, etc.), nickel halide (for example, NiF2, NiCl2, NiBr2, NiI2, etc.), palladium halide (for example, PdF2, PdCl2, PdBr2, PdI2, etc.), platinum halide (for example, PtF2, PtCl2, PtBr2, PtI2, etc.), copper halide (for example, CuF, CuCl, CuBr, CuI, etc.), silver halide (for example, AgF, AgCl, AgBr, AgI, etc.), and gold halide (for example, AuF, AuCl, AuBr, Aul, etc.).
Examples of the post-transition metal halide may include zinc halide (for example, ZnF2, ZnCl2, ZnBr2, ZnI2, etc.), indium halide (for example, InI3, etc.), and tin halide (for example, SnI2, etc.).
Examples of the lanthanide metal halide may include YbF, YbF2, YbF3, SmF3, YbCl, YbCl2, YbCl3 SmCl3, YbBr, YbBr2, YbBr3 SmBr3, YbI, YbI2, Ybl3, and SmI3
Examples of the metalloid halide may include antimony halide (for example, SbCl5, etc.).
Examples of the metal telluride may include alkali metal telluride (for example, Li2Te, Na2Te, K2Te, Rb2Te, Cs2Te, etc.), alkaline earth metal telluride (for example, BeTe, MgTe, CaTe, SrTe, BaTe, etc.), transition metal telluride (for example, TiTe2, ZrTe2, HfTe2, V2Te3, Nb2Te3, Ta2Te3, Cr2Te3, Mo2Te3, W2Te3, MnTe, TcTe, ReTe, FeTe, RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu2Te, CuTe, Ag2Te, AgTe, Au2Te, etc.), post-transition metal telluride (for example, ZnTe, etc.), and lanthanide metal telluride (for example, LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, etc.).
In case that the light-emitting device 10 is a full-color light-emitting device, the emission layer may be patterned into a red emission layer, a green emission layer, and/or a blue emission layer, according to a sub-pixel. In embodiments, the emission layer may have a stacked structure of two or more layers of a red emission layer, a green emission layer, and a blue emission layer, in which the two or more layers contact each other or are separated from each other to emit white light. In embodiments, the emission layer may include two or more materials of a red light-emitting material, a green light-emitting material, and a blue light-emitting material, in which the two or more materials are mixed with each other in a single layer to emit white light.
The emission layer may include a host and a dopant. The dopant may include a phosphorescent dopant, a fluorescent dopant, or any combination thereof.
The amount of the dopant in the emission layer may be from about 0.01 part by weight to about 15 parts by weight based on 100 parts by weight of the host.
In embodiments, the emission layer may include a quantum dot.
The emission layer may include a delayed fluorescence material. The delayed fluorescence material may act as a host or a dopant in the emission layer.
A thickness of the emission layer may be in a range of about 100 Å to about 1,000 Å, for example, about 200 Å to about 600 Å. In case that the thickness of the emission layer is within these ranges, excellent light-emission characteristics may be obtained without a substantial increase in driving voltage.
In embodiments, the host may include a compound represented by Formula 301 below:
In Formula 301,
For example, in case that xb11 in Formula 301 is 2 or more, two or more of Ar301(s) may be linked to each other via a single bond.
In embodiments, the host may include a compound represented by Formula 301-1, a compound represented by Formula 301-2, or any combination thereof:
In Formulae 301-1 and 301-2,
In embodiments, the host may include an alkali earth metal complex, a post-transition metal complex, or any combination thereof. For example, the host may include a Be complex (for example, Compound H55), an Mg complex, a Zn complex, or any combination thereof.
In an embodiment, the host may include one of Compounds H1 to H124, 9,10-di(2-naphthyl)anthracene (ADN), 2-methyl-9,10-bis(naphthalen-2-yl)anthracene (MADN), 9,10-di-(2-naphthyl)-2-t-butyl-anthracene (TBADN), 4,4′-bis(N-carbazolyl)-1,1′-biphenyl (CBP), 1,3-di-9-carbazolylbenzene (mCP), 1,3,5-tri(carbazol-9-yl)benzene (TCP), or any combination thereof:
In embodiments, the phosphorescent dopant may include at least one transition metal as a central metal.
The phosphorescent dopant may include a monodentate ligand, a bidentate ligand, a tridentate ligand, a tetradentate ligand, a pentadentate ligand, a hexadentate ligand, or any combination thereof.
The phosphorescent dopant may be electrically neutral.
For example, the phosphorescent dopant may include an organometallic compound represented by Formula 401:
[00258] wherein in Formulae 401 and 402,
For example, in Formula 402, i) X401 may be nitrogen, and X402 may be carbon, or ii) each of X401 and X402 may be nitrogen.
In embodiments, in case that xc1 in Formula 402 is 2 or more, two ring A401(S) in two or more of L401(S) may be optionally linked to each other via T402, which is a linking group, or two ring A402(S) may be optionally linked to each other via T403, which is a linking group (see Compounds PD1 to PD4 and PD7). T402 and T403 may each be the same as described herein with respect to T401.
L402 in Formula 401 may be an organic ligand. For example, L402 may include a halogen group, a diketone group (for example, an acetylacetonate group), a carboxylic acid group (for example, a picolinate group), —C(═O), an isonitrile group, —CN group, a phosphorus group (for example, a phosphine group, a phosphite group, etc.), or any combination thereof.
The phosphorescent dopant may include, for example, one of compounds PD1 to PD39, or any combination thereof:
The fluorescent dopant may include an amine group-containing compound, a styryl group-containing compound, or any combination thereof.
For example, the fluorescent dopant may include a compound represented by Formula 501:
[00278] wherein in Formula 501,
For example, Ar501 in Formula 501 may be a condensed cyclic group (for example, an anthracene group, a chrysene group, or a pyrene group) in which three or more monocyclic groups are condensed together.
In embodiments, xd4 in Formula 501 may be 2.
In an embodiment, the fluorescent dopant may include: one of Compounds FD1 to FD37; DPVBi; DPAVBi; or any combination thereof:
The emission layer may include a delayed fluorescence material.
In the specification, the delayed fluorescence material may be selected from compounds capable of emitting delayed fluorescent light based on a delayed fluorescence emission mechanism.
The delayed fluorescence material included in the emission layer may act as a host or a dopant depending on the type of other materials included in the emission layer.
In embodiments, the difference between the triplet energy level (eV) of the delayed fluorescence material and the singlet energy level (eV) of the delayed fluorescence material may be greater than or equal to about 0 eV and less than or equal to about 0.5 eV. In case that the difference between the triplet energy level (eV) of the delayed fluorescence material and the singlet energy level (eV) of the delayed fluorescence material satisfies the above-described range, up-conversion from the triplet state to the singlet state of the delayed fluorescence materials may effectively occur, and thus, the luminescence efficiency of the light-emitting device 10 may be improved.
For example, the delayed fluorescence material may include i) a material including at least one electron donor (for example, a π electron-rich C3-C60 cyclic group, such as a carbazole group) and at least one electron acceptor (for example, a sulfoxide group, a cyano group, or a π electron-deficient nitrogen-containing C1-C60 cyclic group), and ii) a material including a C8-C60 polycyclic group in which two or more cyclic groups are condensed while sharing boron (B).
Examples of the delayed fluorescence material may include at least one of the following compounds DF1 to DF9:
The emission layer may include a quantum dot.
The term “quantum dots” as used herein may be crystals of a semiconductor compound, and may include any material capable of emitting light of various emission wavelengths according to the size of the crystals.
A diameter of the quantum dot may be, for example, in a range of about 1 nm to about 10 nm.
The quantum dot may be synthesized by a wet chemical process, a metal organic chemical vapor deposition process, a molecular beam epitaxy process, or any process similar thereto.
The wet chemical process may be a method including mixing a precursor material with an organic solvent and then growing a quantum dot particle crystal. In case that the crystal grows, the organic solvent may naturally act as a dispersant coordinated on the surface of the quantum dot crystal and may control the growth of the crystal so that the growth of quantum dot particles may be controlled through a process which may cost lower, and may be easier than vapor deposition methods, such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE),
The quantum dot may include Group II-VI semiconductor compounds, Group III-V semiconductor compounds, Group III-VI semiconductor compounds, Group I-III-VI semiconductor compounds, Group IV-VI semiconductor compounds, Group IV elements or compounds, or any combination thereof.
Examples of the Group II-VI semiconductor compound may include a binary compound, such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, or MgS; a ternary compound, such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, or MgZnS; a quaternary compound, such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, or HgZnSTe; or any combination thereof.
Examples of the Group III-V semiconductor compound may include: a binary compound, such as GaN, GaP, GaAs, GaSb, AIN, AIP, AlAs, AlSb, InN, InP, InAs, or InSb; a ternary compound, such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AINP, AINAs, AINSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, or InPSb; a quaternary compound, such as GaAINP, GaAlNAs, GaAlNSb, GaAIPAs, GaAIPSb, GalnNP, GalnNAs, GaInNSb, GalnPAs, GalnPSb, InAlNP, InAlNAs, InAlNSb, InAIPAs, or InAIPSb; or any combination thereof. The Group III-V semiconductor compound may further include a Group II element. Examples of the Group III-V semiconductor compound further including a Group II element are InZnP, InGaZnP, InAIZnP, etc.
Examples of the Group III-VI semiconductor compound may include: a binary compound, such as GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, or InTe; a ternary compound, such as InGaS3, or InGaSe3; and any combination thereof.
Examples of the Group I-III-VI semiconductor compound may include: a ternary compound, such as AglnS, AglnS2, CulnS, CulnS2, CuGaO2, AgGaO2, or AgAlO2; or any combination thereof.
Examples of the Group IV-VI semiconductor compound may include: a binary compound, such as SnS, SnSe, SnTe, PbS, PbSe, or PbTe; a ternary compound, such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, or SnPbTe; a quaternary compound, such as SnPbSSe, SnPbSeTe, or SnPbSTe; or any combination thereof.
The Group IV element or compound may include: a single element compound, such as Si or Ge; a binary compound, such as SiC or SiGe; or any combination thereof.
Each element included in a multi-element compound such as the binary compound, the ternary compound, and the quaternary compound may be present at a uniform concentration or non-uniform concentration in a particle.
The quantum dot may have a single structure in which the concentration of each element in the quantum dot is uniform, or a core-shell dual structure. For example, the material included in the core and the material included in the shell may be different from each other.
The shell of the quantum dot may act as a protective layer that prevents chemical degeneration of the core to maintain semiconductor characteristics, and/or as a charging layer that provides electrophoretic characteristics to the quantum dot. The shell may be a single layer or a multi-layer. The interface between the core and the shell may have a concentration gradient in which the concentration of an element in the shell decreases toward the center of the core.
Examples of the shell of the quantum dot may include an oxide of metal, metalloid, or non-metal, a semiconductor compound, and any combination thereof. Examples of the oxide of metal, metalloid, or non-metal of the shell may include a binary compound, such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, or NiO; a ternary compound, such as MgAl2O4, CoFe2O4, NiFe2O4, or CoMn2O4; and any combination thereof. Examples of the semiconductor compound of the shell may include, as described herein, a Group II-VI semiconductor compound; a Group III-V semiconductor compound; a Group III-VI semiconductor compound; a Group I-III-VI semiconductor compound; a Group IV-VI semiconductor compound; and any combination thereof. For example, the semiconductor compound may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AIP, AlSb, or any combination thereof.
A full width at half maximum (FWHM) of the emission wavelength spectrum of the quantum dot may be about 45 nm or less, about 40 nm or less, or about 30 nm or less, and within these ranges, color purity or color reproducibility may be increased. Since the light emitted through the quantum dot may be emitted in all directions, the wide viewing angle may be improved.
The quantum dot may be in the form of a spherical particle, a pyramidal particle, a multi-arm particle, a cubic nanoparticle, a nanotube particle, a nanowire particle, a nanofiber particle, or a nanoplate particle.
Since the energy band gap may be adjusted by controlling the size of the quantum dot, light having various wavelength bands may be obtained from the quantum dot emission layer. Accordingly, by using quantum dots of different sizes, a light-emitting device that emits light of various wavelengths may be implemented. In embodiments, the size of the quantum dot may be selected to emit red, green and/or blue light. The size of the quantum dot may be controlled to emit white light by combination of light of various colors.
The electron transport region 160 may include a hole blocking layer.
The electron transport region 160 may have i) a single-layered structure consisting of a single layer consisting of a single material, ii) a single-layered structure consisting of a single layer consisting of multiple different materials, or iii) a multi-layered structure including multiple layers including different materials.
The electron transport region 160 may further include a buffer layer, an electron control layer, an electron transport layer, an electron injection layer, or any combination thereof.
In an embodiment, the electron transport region may have a hole blocking layer/electron transport layer/electron injection layer structure, a hole blocking layer/electron control layer/electron transport layer/electron injection layer structure, an electron control layer/electron transport layer/electron injection layer structure, or a buffer layer/electron transport layer/electron injection layer structure, wherein for each structure, constituting layers are sequentially stacked each other from an emission layer.
In an embodiment, the electron transport region (for example, the buffer layer, the hole blocking layer, the electron control layer, or the electron transport layer in the electron transport region) may include a metal-free compound including at least one π electron-deficient nitrogen-containing C1-C60 cyclic group.
For example, the electron transport region may include a compound represented by Formula 601 below:
[00319] wherein in Formula 601,
In embodiments, Ar601 in Formula 601 may be an anthracene group unsubstituted or substituted with at least one R10a.
In embodiments, the electron transport region may include a compound represented by Formula 601-1:
[00330] wherein in Formula 601-1,
For example, xe1 and xe611 to xe613 in Formulae 601 and 601-1 may each independently be 0, 1, or 2.
The electron transport region may include one of Compounds ET1 to ET48, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), Alq3, BAlq, TAZ, NTAZ, or any combination thereof:
The thickness of the electron transport region may be in a range of about 100 Angstroms (Å) to about 5,000 Å, or about 100 Å to about 4,000 Å. In case that the electron transport region includes a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, or any combination thereof, the thickness of the buffer layer, the hole blocking layer, or the electron control layer may each independently be from about 20 Å to about 1000 Å, for example, about 30 Å to about 300 Å, and the thickness of the electron transport layer may be from about 100 Å to about 1000 Å, for example, about 150 Å to about 500 Å. In case that the thickness of the buffer layer, the hole blocking layer, the electron control layer, the electron transport layer, and/or the electron transport region are within these ranges, satisfactory electron transporting characteristics may be obtained without a substantial increase in driving voltage.
The electron transport region (for example, the electron transport layer in the electron transport region) may further include, in addition to the materials described above, a metal-containing material.
The metal-containing material may include an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The metal ion of an alkali metal complex may be a Li ion, a Na ion, a K ion, a Rb ion, or a Cs ion, and the metal ion of an alkaline earth metal complex may be a Be ion, a Mg ion, a Ca ion, a Sr ion, or a Ba ion. A ligand coordinated with the metal ion of the alkali metal complex or the alkaline earth-metal complex may include a hydroxyquinoline, a hydroxyisoquinoline, a hydroxybenzoquinoline, a hydroxyacridine, a hydroxyphenanthridine, a hydroxyphenyloxazole, a hydroxyphenylthiazole, a hydroxyphenyloxadiazole, a hydroxyphenylthiadiazole, a hydroxyphenylpyridine, a hydroxyphenylbenzimidazole, a hydroxyphenylbenzothiazole, a bipyridine, a phenanthroline, a cyclopentadiene, or any combination thereof.
For example, the metal-containing material may include a Li complex. The Li complex may include, for example, Compound ET-D1 (LiQ) or ET-D2:
The electron transport region may include an electron injection layer that facilitates the injection of electrons from the second electrode 190. The electron injection layer may contact (e.g., direct contact) the second electrode 190.
The electron injection layer may have: i) a single-layered structure consisting of a single layer consisting of a single material, ii) a single-layered structure consisting of a single layer consisting of multiple different materials, or iii) a multi-layered structure including multiple layers including different materials.
The electron injection layer may include an alkali metal, alkaline earth metal, a rare earth metal, an alkali metal-containing compound, alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof.
The alkali metal of the electron injection layer may include Li, Na, K, Rb, Cs, or any combination thereof. The alkaline earth metal of the electron injection layer may include Mg, Ca, Sr, Ba, or any combination thereof. The rare earth metal of the electron injection layer may include Sc, Y, Ce, Tb, Yb, Gd, or any combination thereof.
The alkali metal-containing compound, the alkaline earth metal-containing compound, and the rare earth metal-containing compound of the electron injection layer may be oxides, halides (for example, fluorides, chlorides, bromides, or iodides), or tellurides of the alkali metal, the alkaline earth metal, and the rare earth metal, or any combination thereof.
The alkali metal-containing compound of the electron injection layer may include: alkali metal oxides, such as Li2O, Cs2O, or K2O; alkali metal halides, such as LiF, NaF, CsF, KF, Lil, Nal, Csl, or KI; or any combination thereof. The alkaline earth metal-containing compound of the electron injection layer may include an alkaline earth metal compound, such as BaO, SrO, CaO, BaxSr1-xO (wherein x is a real number satisfying the condition of 0<x<1), BaxCa1-xO (wherein x is a real number satisfying the condition of 0<x<1), or the like. The rare earth metal-containing compound of the electron injection layer may include YbF3, ScF3, Sc2O3, Y2O3, Ce2O3, GdF3, TbF3, Ybl3, Scl3, Tbl3, or any combination thereof. In embodiments, the rare earth metal-containing compound of the electron injection layer may include lanthanide metal telluride. Examples of the lanthanide metal telluride may include LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La2Te3, Ce2Te3, Pr2Te3, Nd2Te3, Pm2Te3, Sm2Te3, Eu2Te3, Gd2Te3, Tb2Te3, Dy2Te3, Ho2Te3, Er2Te3, Tm2Te3, Yb2Te3, and Lu2Te3.
The alkali metal complex, the alkaline earth-metal complex, and the rare earth metal complex of the electron injection layer may include i) one of ions of the alkali metal, the alkaline earth metal, and the rare earth metal and ii), as a ligand bonded to the metal ion, for example, a hydroxyquinoline, a hydroxyisoquinoline, a hydroxybenzoquinoline, a hydroxyacridine, a hydroxyphenanthridine, a hydroxyphenyloxazole, a hydroxyphenylthiazole, a hydroxyphenyloxadiazole, a hydroxyphenylthiadiazole, a hydroxyphenylpyridine, a hydroxyphenyl benzimidazole, a hydroxyphenylbenzothiazole, a bipyridine, a phenanthroline, a cyclopentadiene, or any combination thereof.
The electron injection layer may consist of an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof, as described above. In embodiments, the electron injection layer may further include an organic material (for example, a compound represented by Formula 601).
In embodiments, the electron injection layer may consist of: i) an alkali metal-containing compound (for example, an alkali metal halide); or ii) a) an alkali metal-containing compound (for example, an alkali metal halide), and b) an alkali metal, an alkaline earth metal, a rare earth metal, or any combination thereof. For example, the electron injection layer may be a KI:Yb co-deposited layer, an Rbl:Yb co-deposited layer, a LiF:Yb co-deposited layer, or the like.
In case that the electron injection layer further includes an organic material, an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth-metal complex, a rare earth metal complex, or any combination thereof may be uniformly or non-uniformly dispersed in a matrix including the organic material.
A thickness of the electron injection layer may be in a range of about 1 Å to about 100 Å, and, for example, about 3 Å to about 90 Å. In case that the thickness of the electron injection layer is within the ranges described above, satisfactory electron injection characteristics may be obtained without a substantial increase in driving voltage.
The second electrode 190 may be located on the interlayer 150 having such a structure. The second electrode 190 may be a cathode, which is an electron injection electrode, and as a material for the second electrode 190, a metal, an alloy, an electrically conductive compound, or any combination thereof, each having a low work function, may be used.
The second electrode 190 may include lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al—Li), calcium (Ca), magnesium-indium (Mg—In), magnesium-silver (Mg—Ag), ytterbium (Yb), silver-ytterbium (Ag—Yb), ITO, IZO, or any combination thereof. The second electrode 190 may be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode.
The second electrode 190 may have a single-layered structure or a multi-layered structure including two or more layers.
A first capping layer may be arranged outside of the first electrode 110, and/or a second capping layer may be arranged outside of the second electrode 190. In detail, the light-emitting device 100 may have a structure in which the first capping layer, the first electrode 110, the interlayer 150, and the second electrode 190 are sequentially stacked each other in this stated order, a structure in which the first electrode 110, the interlayer 150, the second electrode 190, and the second capping layer are sequentially stacked each other in this stated order, or a structure in which the first capping layer, the first electrode 110, the interlayer 150, the second electrode 190, and the second capping layer are sequentially stacked each other in this stated order.
Light generated in an emission layer of the interlayer 150 of the light-emitting device 10 may be sent toward the outside through the first electrode 110 which is a semi-transmissive electrode or a transmissive electrode, and the first capping layer. Light generated in an emission layer of the interlayer 150 of the light-emitting device 10 may be sent toward the outside through the second electrode 190 which is a semi-transmissive electrode or a transmissive electrode, and the second capping layer.
The first capping layer and the second capping layer may increase external emission efficiency according to the principle of constructive interference. Accordingly, the light emission efficiency of the light-emitting device 10 may be increased, so that the luminescence efficiency of the light-emitting device 10 may be improved.
The first capping layer and the second capping layer may each include a material having a refractive index of about 1.6 or more (at 589 nm).
The first capping layer and the second capping layer may each independently be an organic capping layer including an organic material, an inorganic capping layer including an inorganic material, or an organic-inorganic composite capping layer including an organic material and an inorganic material.
At least one of the first capping layer and the second capping layer may each independently include carbocyclic compounds, heterocyclic compounds, amine group-containing compounds, porphine derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, alkali metal complexes, alkaline earth metal complexes, or any combination thereof. Optionally, the carbocyclic compound, the heterocyclic compound, and the amine group-containing compound may be substituted with a substituent including O, N, S, Se, Si, F, Cl, Br, l, or any combination thereof. In embodiments, at least one of the first capping layer and the second capping layer may each independently include an amine group-containing compound.
For example, at least one of the first capping layer and the second capping layer may each independently include a compound represented by Formula 201, a compound represented by Formula 202, or any combination thereof.
In embodiments, at least one of the first capping layer and the second capping layer may each independently include one of Compounds HT28 to HT33, one of Compounds CP1 to CP6, β-NPB, or any combination thereof:
The light-emitting device may be included in various electronic apparatuses. For example, the electronic apparatus including the light-emitting device may be a light-emitting apparatus, an authentication apparatus, or the like.
The electronic apparatus (for example, a light-emitting apparatus) may further include, in addition to the light-emitting device, i) a color filter, ii) a color conversion layer, or iii) a color filter and a color conversion layer. The color filter and/or the color conversion layer may be located in at least one traveling direction of light emitted from the light-emitting device. For example, the light emitted from the light-emitting device may be blue light or white light. For details on the light-emitting device, related description provided above may be referred to. In embodiments, the color conversion layer may include a quantum dot. The quantum dot may be, for example, a quantum dot as described herein.
The electronic apparatus may include a first substrate. The first substrate may include multiple subpixels, the color filter may include multiple color filter areas respectively corresponding to the subpixels, and the color conversion layer may include multiple color conversion areas respectively corresponding to the subpixels.
A pixel-defining film may be located between the subpixels to define each of the subpixels.
The color filter may further include multiple color filter areas and light-shielding patterns located between the color filter areas, and the color conversion layer may further include multiple color conversion areas and light-shielding patterns located between the color conversion areas.
The color filter areas (or the color conversion areas) may include a first area emitting first color light, a second area emitting second color light, and/or a third area emitting third color light, wherein the first color light, the second color light, and/or the third color light may have different maximum emission wavelengths from one another. For example, the first color light may be red light, the second color light may be green light, and the third color light may be blue light. For example, the color filter areas (or the color conversion areas) may include quantum dots. In particular, the first area may include a red quantum dot, the second area may include a green quantum dot, and the third area may not include a quantum dot. For details on the quantum dot, related descriptions provided herein may be referred to. The first area, the second area, and/or the third area may each include a scatterer.
For example, the light-emitting device may emit first light, the first area may absorb the first light to emit first-first color light, the second area may absorb the first light to emit second-first color light, and the third area may absorb the first light to emit third-first color light. In this regard, the first-first color light, the second-first color light, and the third-first color light may have different maximum emission wavelengths. In particular, the first light may be blue light, the first-first color light may be red light, the second-first color light may be green light, and the third-first color light may be blue light.
The electronic apparatus may further include a thin-film transistor, in addition to the light-emitting device as described above. The thin-film transistor may include a source electrode, a drain electrode, and an activation layer, wherein any one of the source electrode and the drain electrode may be electrically connected to any one of the first electrode and the second electrode of the light-emitting device.
The thin-film transistor may further include a gate electrode, a gate insulating film, or the like.
The activation layer may include crystalline silicon, amorphous silicon, an organic semiconductor, an oxide semiconductor, or the like.
The electronic apparatus may further include a sealing portion for sealing the light-emitting device. The sealing portion may be located between the color filter and/or the color conversion layer and the light-emitting device. The sealing portion may allow light from the light-emitting device to be sent to the outside, and simultaneously prevents ambient air and moisture from penetrating into the light-emitting device. The sealing portion may be a sealing substrate including a transparent glass substrate or a plastic substrate. The sealing portion may be a thin-film encapsulation layer including at least one layer of an organic layer and/or an inorganic layer. In case that the sealing portion is a thin film encapsulation layer, the electronic apparatus may be flexible.
Various functional layers may be additionally located on the sealing portion, in addition to the color filter and/or the color conversion layer, according to the use of the electronic apparatus. Examples of the functional layers may include a touch screen layer, a polarizing layer, and the like. The touch screen layer may be a pressure-sensitive touch screen layer, a capacitive touch screen layer, or an infrared touch screen layer. The authentication apparatus may be, for example, a biometric authentication apparatus that authenticates an individual by using biometric information of a living body (for example, fingertips, pupils, etc.).
The authentication apparatus may further include, in addition to the light-emitting device as described above, a biometric information collector.
The electronic apparatus may be applied to various displays, light sources, lighting, personal computers (for example, a mobile personal computer), mobile phones, digital cameras, electronic organizers, electronic dictionaries, electronic game machines, medical instruments (for example, electronic thermometers, sphygmomanometers, blood glucose meters, pulse measurement devices, pulse wave measurement devices, electrocardiogram displays, ultrasonic diagnostic devices, or endoscope displays), fish finders, various measuring instruments, meters (for example, meters for a vehicle, an aircraft, and a vessel), projectors, and the like.
As illustrated in
The light-emitting device 20 may include a first emitting part 150-1 closest to the first electrode 110, a fourth emitting part 150-4 closest to the second electrode 190, a second emitting part 150-2 located between the first emitting part 150-1 and the fourth emitting part 150-4, and a third emitting part 150-3 located between the second emitting part 150-2 and the fourth emitting part 150-4.
For example, the first emitting part to the third emitting part 150-1, 150-2, 150-3 may each emit blue light, and the fourth emitting part 150-4 may emit green light.
The light-emitting device 20 may include a first charge generation layer 170-1 located between the first emitting part 150-1 and the second emitting part 150-2, a second charge generation layer 170-2 located between the second emitting part 150-2 and the third emitting part 150-3, and a third charge generation layer 170-3 located between the third emitting part 150-3 and the fourth emitting part 150-4.
The first emitting part 150-1 may include a first hole transport region 140-1, a first first emission layer 152-1, a first second emission layer 154-1, and a first electron transport region 160-1, which are sequentially stacked each other.
The second emitting part 150-2 may include a second hole transport region 140-2, a second first emission layer 152-2, a second second emission layer 154-2, and a second electron transport region 160-2, which are sequentially stacked each other.
The third emitting part 150-3 may include a third hole transport region 140-3, a third first emission layer 152-3, a third second emission layer 154-3, and a third electron transport region 160-3, which are sequentially stacked each other.
The fourth emitting part 150-4 may include a fourth hole transport region 140-4, a fourth first emission layer 152-4, a fourth second emission layer 154-4, and a fourth electron transport region 160-4, which are sequentially stacked each other.
The first charge generation layer 170-1 may include a first n-type charge generation layer 171-1 and a first p-type charge generation layer 172-1. The first n-type charge generation layer 171-1 may directly contact with the first p-type charge generation layer 172-1.
The second charge generation layer 170-2 may include a second n-type charge generation layer 171-2 and a second p-type charge generation layer 172-2. The second n-type charge generation layer 171-2 may directly contact with the second p-type charge generation layer 172-2.
The third charge generation layer 170-3 may include a third n-type charge generation layer 171-3 and a third p-type charge generation layer 172-3. The third n-type charge generation layer 171-3 may directly contact with the third p-type charge generation layer 172-3.
The first charge generation layer 170-1 to the third charge generation layer 170-3 may each be identical to or different from each other.
As illustrated in
The first emitting part 150-1 may include a first hole transport region 140-1, a first first emission layer 152-1, a second first emission layer 154-1, and a first electron transport region 160-1, which are sequentially stacked each other.
The first first emission layer 152-1 may include a first first a emission layer 152a-1 located on the first subpixel SP1 and emitting first first a color light, a first first b emission layer 152b-1 located on the second subpixel SP2 and emitting first first b color light, and a first first c emission layer 152c-1 located on the third subpixel SP3 and emitting first first c color light. In an embodiment, the first first a color light may be red light, the first first b color light may be green light, and the first first c color light may be blue light.
The second first emission layer 154-1 may include a second first a emission layer 154a-1 located on the first subpixel SP1 and emitting second first a color light, a second first b emission layer 154b-1 located on the second subpixel SP2 and emitting second first b color light, and a second first c emission layer 154c-1 located on the third subpixel SP3 and emitting second first c color light. In an embodiment, the second first a color light may be red light, the second first b color light may be green light, and the second first c color light may be blue light.
The second emitting part 150-2 may include a second hole transport region 140-2, a first second emission layer 152-2, a second second emission layer 154-2, and a second electron transport region 160-2, which are sequentially stacked each other.
The first second emission layer 152-2 may include a first second a emission layer 152a-2 located on the first subpixel SP1 and emitting first second a color light, a first second b emission layer 152b-2 located on the second subpixel SP2 and emitting first second b color light, and a first second c emission layer 152c-2 located on the third subpixel SP3 and emitting first second c color light. In an embodiment, the first second a color light may be red light, the first second b color light may be green light, and the first second c color light may be blue light.
The second second emission layer 154-2 may include a second second a emission layer 154a-2 located on the first subpixel SP1 and emitting second second a color light, a second second b emission layer 154b-2 located on the second subpixel SP2 and emitting second second b color light, and a second second c emission layer 154c-2 located on the third subpixel SP3 and emitting second second c color light. In an embodiment, the second second a color light may be red light, the second second b color light may be green light, and the second second c color light may be blue light.
The electronic apparatus of
The substrate 100 may be a flexible substrate, a glass substrate, or a metal substrate. A buffer layer 210 may be located on the substrate 100. The buffer layer 210 may prevent penetration of impurities through the substrate 100 and may provide a flat surface on the substrate 100.
A TFT may be located on the buffer layer 210. The TFT may include an activation layer 220, a gate electrode 240, a source electrode 260, and a drain electrode 270.
The activation layer 220 may include an inorganic semiconductor such as silicon or polysilicon, an organic semiconductor, or an oxide semiconductor, and may include a source region, a drain region, and a channel region.
A gate insulating film 230 for insulating the activation layer 220 from the gate electrode 240 may be located on the activation layer 220, and the gate electrode 240 may be located on the gate insulating film 230.
An interlayer insulating film 250 may be located on the gate electrode 240. The interlayer insulating film 250 may be located between the gate electrode 240 and the source electrode 260 and between the gate electrode 240 and the drain electrode 270, to insulate from one another.
The source electrode 260 and the drain electrode 270 may be located on the interlayer insulating film 250. The interlayer insulating film 250 and the gate insulating film 230 may be formed to expose the source region and the drain region of the activation layer 220, and the source electrode 260 and the drain electrode 270 may be located in contact with the exposed portions of the source region and the drain region of the activation layer 220.
The TFT may be electrically connected to the light-emitting device to drive the light-emitting device, and may be covered by a passivation layer 280. The passivation layer 280 may include an inorganic insulating film, an organic insulating film, or any combination thereof. A light-emitting device may be provided on the passivation layer 280. The light-emitting device may include a first electrode 110, an interlayer 150, and a second electrode 190.
The first electrode 110 may be located on the passivation layer 280. The passivation layer 280 may be located to expose a portion of the drain electrode 270, not fully covering the drain electrode 270, and the first electrode 110 may be located to be electrically connected to the exposed portion of the drain electrode 270.
A pixel defining layer 290 including an insulating material may be located on the first electrode 110. The pixel defining layer 290 may expose a certain region of the first electrode 110, and an interlayer 130 may be formed in the exposed region of the first electrode 110. The pixel defining layer 290 may be a polyimide or polyacrylic organic film. Although not shown in
The second electrode 190 may be located on the interlayer 150, and a capping layer 195 may be additionally formed on the second electrode 190. The capping layer 195 may be formed to cover the second electrode 190.
The encapsulation portion 300 may be located on the capping layer 195. The encapsulation portion 300 may be located on a light-emitting device to protect the light-emitting device from moisture or oxygen. The encapsulation portion 300 may include: an inorganic film including silicon nitride (SiNx), silicon oxide (SiOx), indium tin oxide, indium zinc oxide, or any combination thereof; an organic film including polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, an acrylic resin (for example, polymethyl methacrylate, polyacrylic acid, or the like), an epoxy-based resin (for example, aliphatic glycidyl ether (AGE), or the like), or any combination thereof; or any combination of the inorganic films and the organic films.
The electronic apparatus of
Respective layers included in the hole transport region, the emission layer (including the first and second emission layers), and respective layers included in the electron transport region may be formed in a certain region by using one or more suitable methods selected from vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) method, ink-jet printing, laser-printing, and laser-induced thermal imaging (LITI).
In case that layers constituting the hole transport region, an emission layer, and layers constituting the electron transport region are formed by vacuum deposition, the deposition may be performed at a deposition temperature of about 100° C. to about 500° C., a vacuum degree of about 10-8 torr to about 10-3 torr, and a deposition speed of about 0.01 Å/sec to about 100 Å/sec, depending on a material to be included in a layer to be formed and the structure of a layer to be formed.
The term “C3-C60 carbocyclic group” as used herein may be a cyclic group consisting of carbon only as a ring-forming atom and having three to sixty carbon atoms, and the term “C1-C60 heterocyclic group” as used herein may be a cyclic group that has one to sixty carbon atoms and further has, in addition to carbon, a heteroatom as a ring-forming atom. The C3-C60 carbocyclic group and the C1-C60 heterocyclic group may each be a monocyclic group consisting of one ring or a polycyclic group in which two or more rings are condensed with each other. For example, the C1-C60 heterocyclic group may have 3 to 61 ring-forming atoms.
The “cyclic group” as used herein may include the C3-C60 carbocyclic group, and the C1-C60 heterocyclic group.
The term “π electron-rich C3-C60 cyclic group” as used herein may be a cyclic group that has three to sixty carbon atoms and does not include *—N═*’ as a ring-forming moiety, and the term “π electron-deficient nitrogen-containing C1-C60 cyclic group” as used herein may be a heterocyclic group that has one to sixty carbon atoms and includes *—N═*’ as a ring-forming moiety.
For example,
The terms “the cyclic group, the C3-C60 carbocyclic group, the C1-C60 heterocyclic group, the π electron-rich C3-C60 cyclic group, or the π electron-deficient nitrogen-containing C1-C60 cyclic group” as used herein may be a group condensed to any cyclic group, a monovalent group, or a polyvalent group (for example, a divalent group, a trivalent group, a tetravalent group, etc.) according to the structure of a formula for which the corresponding term is used. For example, the “benzene group” may be a benzo group, a phenyl group, a phenylene group, or the like, which may be readily understood by one of ordinary skill in the art according to the structure of a formula including the “benzene group.”
Examples of the monovalent C3-C60 carbocyclic group and the monovalent C1-C60 heterocyclic group may include a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group. Examples of the divalent C3-C60 carbocyclic group and the monovalent C1-C60 heterocyclic group may include a C3-C10 cycloalkylene group, a C1-C10 heterocycloalkylene group, a C3-C10 cycloalkenylene group, a C1-C10 heterocycloalkenylene group, a C6-C60 arylene group, a C1-C60 heteroarylene group, a divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group.
The term “C1-C60 alkyl group” as used herein may be a linear or branched aliphatic hydrocarbon monovalent group that has one to sixty carbon atoms, and specific examples thereof may include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, an isobutyl group, a tert-butyl group, an n-pentyl group, a tert-pentyl group, a neopentyl group, an isopentyl group, a sec-pentyl group, a 3-pentyl group, a sec-isopentyl group, an n-hexyl group, an isohexyl group, a sec-hexyl group, a tert-hexyl group, an n-heptyl group, an isoheptyl group, a sec-heptyl group, a tert-heptyl group, an n-octyl group, an isooctyl group, a sec-octyl group, a tert-octyl group, an n-nonyl group, an isononyl group, a sec-nonyl group, a tert-nonyl group, an n-decyl group, an isodecyl group, a sec-decyl group, and a tert-decyl group. The term “C1-C60 alkylene group” as used herein may be a divalent group having the same structure as the C1-C60 alkyl group.
The term “C2-C60 alkenyl group” as used herein may be a monovalent hydrocarbon group having at least one carbon-carbon double bond in the middle or at the terminus of the C2-C60 alkyl group, and examples thereof may include an ethenyl group, a propenyl group, and a butenyl group. The term “C2-C60 alkenylene group” as used herein may be a divalent group having the same structure as the C2-C60 alkenyl group.
The term “C2-C60 alkynyl group” as used herein may be a monovalent hydrocarbon group having at least one carbon-carbon triple bond in the middle or at the terminus of the C2-C60 alkyl group, and examples thereof may include an ethynyl group, a propynyl group, and the like. The term “C2-C60 alkynylene group” as used herein may be a divalent group having the same structure as the C2-C60 alkynyl group.
The term “C1-C60 alkoxy group” as used herein may be a monovalent group represented by -OA101 (wherein A101 is the C1-C60 alkyl group), and examples thereof may include a methoxy group, an ethoxy group, and an isopropyloxy group.
The term “C3-C10 cycloalkyl group” as used herein may be a monovalent saturated hydrocarbon cyclic group having 3 to 10 carbon atoms, and examples thereof may include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, an adamantanyl group, a norbornanyl group (or bicyclo[2.2.1]heptyl group), a bicyclo[1.1.1]pentyl group, a bicyclo[2.1.1]hexyl group, and a bicyclo[2.2.2]octyl group. The term “C3-C10 cycloalkylene group” as used herein may be a divalent group having the same structure as the C3-C10 cycloalkyl group.
The term “C1-C10 heterocycloalkyl group” as used herein may be a monovalent cyclic group of 1 to 10 carbon atoms, further including, in addition to carbon atoms, at least one heteroatom, as ring-forming atoms, and specific examples may include a 1,2,3,4-oxatriazolidinyl group, a tetrahydrofuranyl group, and a tetrahydrothiophenyl group. The term “C1-C10 heterocycloalkylene group” as used herein may be a divalent group having the same structure as the C1-C10 heterocycloalkyl group.
The term C3-C10 cycloalkenyl group used herein may be a monovalent cyclic group that has three to ten carbon atoms and at least one carbon-carbon double bond in the ring thereof and no aromaticity, and specific examples thereof may include a cyclopentenyl group, a cyclohexenyl group, and a cycloheptenyl group. The term “C3-C10 cycloalkenylene group” as used herein may be a divalent group having the same structure as the C3-C10 cycloalkenyl group.
The term “C1-C10 heterocycloalkenyl group” as used herein may be a monovalent cyclic group of 1 to 10 carbon atoms, further including, in addition to carbon atoms, at least one heteroatom, as ring-forming atoms, and having at least one carbon-carbon double bond in the cyclic structure thereof. Examples of the C1-C10 heterocycloalkenyl group may include a 4,5-dihydro-1,2,3,4-oxatriazolyl group, a 2,3-dihydrofuranyl group, and a 2,3-dihydrothiophenyl group. The term “C1-C10 heterocycloalkenylene group” as used herein may be a divalent group having the same structure as the C1-C10 heterocycloalkenyl group.
The term “C6-C60 aryl group” as used herein may be a monovalent group having a carbocyclic aromatic system of 6 to 60 carbon atoms, and the term “C6-C60 arylene group” as used herein may be a divalent group having a carbocyclic aromatic system of 6 to 60 carbon atoms. Examples of the C6-C60 aryl group may include a phenyl group, a pentalenyl group, a naphthyl group, an azulenyl group, an indacenyl group, an acenaphthyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a heptalenyl group, a naphthacenyl group, a picenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, and an ovalenyl group. In case that the C6-C60 aryl group and the C6-C60 arylene group each include two or more rings, the rings may be condensed with each other.
The term “C1-C60 heteroaryl group” as used herein may be a monovalent group having a heterocyclic aromatic system of 1 to 60 carbon atoms, further including, in addition to carbon atoms, at least one heteroatom, as ring-forming atoms. The term “C1-C60 heteroarylene group” as used herein may be a divalent group having a heterocyclic aromatic system of 1 to 60 carbon atoms, further including, in addition to carbon atoms, at least one heteroatom, as ring-forming atoms. Examples of the C1-C60 heteroaryl group may include a pyridinyl group, a pyrimidinyl group, a pyrazinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, a benzoquinolinyl group, an isoquinolinyl group, a benzoisoquinolinyl group, a quinoxalinyl group, a benzoquinoxalinyl group, a quinazolinyl group, a benzoquinazolinyl group, a cinnolinyl group, a phenanthrolinyl group, a phthalazinyl group, and a naphthyridinyl group. In case that the C1-C60 heteroaryl group and the C1-C60 heteroarylene group each include two or more rings, the rings may be condensed with each other.
The term “monovalent non-aromatic condensed polycyclic group” as used herein may be a monovalent group (for example, having 8 to 60 carbon atoms) having two or more rings condensed to each other, only carbon atoms as ring-forming atoms, and no aromaticity in its entire molecular structure. Examples of the monovalent non-aromatic condensed polycyclic group may include an indenyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, an indenophenanthrenyl group, and an indeno anthracenyl group. The term “divalent non-aromatic condensed polycyclic group” as used herein may be a divalent group having the same structure as the monovalent non-aromatic condensed polycyclic group described above.
The term “monovalent non-aromatic condensed heteropolycyclic group” as used herein may be a monovalent group (for example, having 1 to 60 carbon atoms) having two or more rings condensed to each other, further including, in addition to carbon atoms, at least one heteroatom, as ring-forming atoms, and having non-aromaticity in its entire molecular structure. Examples of the monovalent non-aromatic condensed heteropolycyclic group may include a pyrrolyl group, a thiophenyl group, a furanyl group, an indolyl group, a benzoindolyl group, a naphtho indolyl group, an isoindolyl group, a benzoisoindolyl group, a naphthoisoindolyl group, a benzosilolyl group, a benzothiophenyl group, a benzofuranyl group, a carbazolyl group, a dibenzosilolyl group, a dibenzothiophenyl group, a dibenzofuranyl group, an azacarbazolyl group, an azafluorenyl group, an azadibenzosilolyl group, an azadibenzothiophenyl group, an azadibenzofuranyl group, a pyrazolyl group, an imidazolyl group, a triazolyl group, a tetrazolyl group, an oxazolyl group, an isoxazolyl group, a thiazolyl group, an isothiazolyl group, an oxadiazolyl group, a thiadiazolyl group, a benzopyrazolyl group, a benzimidazolyl group, a benzoxazolyl group, a benzothiazolyl group, a benzoxadiazolyl group, a benzothiadiazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, an imidazotriazinyl group, an imidazopyrazinyl group, an imidazopyridazinyl group, an indenocarbazolyl group, an indolocarbazolyl group, a benzofurocarbazolyl group, a benzothienocarbazolyl group, a benzosilolocarbazolyl group, a benzoindolocarbazolyl group, a benzocarbazolyl group, a benzonaphthofuranyl group, a benzonaphthothiophenyl group, a benzonaphthosilolyl group, a benzofurodibenzofuranyl group, a benzofurodibenzothiophenyl group, and a benzothienodibenzothiophenyl group. The term “divalent non-aromatic condensed heteropolycyclic group” as used herein may be a divalent group having the same structure as the monovalent non-aromatic condensed heteropolycyclic group described above.
The term “C6-C60 aryloxy group” as used herein may indicate -OA102 (wherein A102 is a C6-C60 aryl group), and the term “C6-C60 arylthio group” as used herein may indicate -SA103 (wherein A103 is a C6-C60 aryl group).
The term “C7-C60 aryl alkyl group” used herein may be -A104A105 (where A104 may be a C1-C54 alkylene group, and A105 may be a C6-C59 aryl group), and the term C2-C60 heteroaryl alkyl group” used herein may be -A106A107 (where A100 may be a C1-C59 alkylene group, and A107 may be a C1-C59 heteroaryl group).
The term “R10a” as used herein may be:
The term “heteroatom” as used herein may be any atom other than a carbon atom. Examples of the heteroatom may include O, S, N, P, Si, B, Ge, Se, and any combinations thereof.
The term “third-row transition metal” used herein may indicate hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au), and the like.
“Ph” as used herein may be a phenyl group, “Me” as used herein may be a methyl group, “Et” as used herein may be an ethyl group, “tert-Bu” or “But” as used herein may be a tert-butyl group, and “OMe” as used herein may be a methoxy group.
The term “biphenyl group” as used herein may be “a phenyl group substituted with a phenyl group.” In other words, the “biphenyl group” may be a substituted phenyl group having a C6-C60 aryl group as a substituent.
The term “terphenyl group” as used herein may be “a phenyl group substituted with a biphenyl group”. In other words, the “terphenyl group” may be a substituted phenyl group having, as a substituent, a C6-C60 aryl group substituted with a C6-C60 aryl group.
* and *’ as used herein, unless defined otherwise, each may be a binding site to a neighboring atom in a corresponding formula or moiety.
Hereinafter, a light-emitting device according to embodiments will be described in detail with reference to Examples. The wording “B was used instead of A” used in describing Examples may mean that an identical molar equivalent of B was used in place of A.
As an anode, a glass substrate with 15 Ω/cm2 (1,200 Å) ITO thereon, which was manufactured by Corning Inc., was cut to a size of 50 mm × 50 mm × 0.5 mm, and the glass substrate was sonicated by using isopropyl alcohol and pure water for 15 minutes each, and then ultraviolet light was irradiated for 30 minutes thereto and ozone was exposed thereto for cleaning. The resultant glass substrate was loaded onto a vacuum deposition apparatus.
On the ITO anode, P1 was deposited to form a layer having a thickness of 10 nm and HT3 was deposited to form a layer having a thickness of 10 nm. Subsequently, TCTA was deposited thereon to form a first electron blocking layer having a thickness of 5 nm. Compound 1-1 (first host): DF13 (first dopant) were co-deposited on the first electron blocking layer to a weight ratio of 98: 2 to form a first first emission layer having a thickness of 10 nm, and Compound 2-1 (second host): DF13 (second dopant) were co-deposited thereon to a weight ratio of 98: 2 to form a second first emission layer having a thickness of 10 mm. ET46 was deposited on the second first emission layer to form a first hole blocking layer having a thickness of 5 nm, thereby forming a first emitting part.
On the first emitting part, BCP and Li (wherein an amount of Li was 1 wt%) were co-deposited to form an n-type charge generation layer having a thickness of 5 nm, and HAT-CN was deposited thereon to form a p-type charge generation layer having a thickness of 5 nm, thereby forming a first charge generation layer.
HT3 was deposited on the first charge generation layer to form a layer having a thickness of 10 nm. Subsequently, a second electron blocking layer, a first second emission layer, a second second emission layer, and a second hole blocking layer were formed in the same manner as used to form the first electron blocking layer, the first first emission layer, the second first emission layer, and the first hole blocking layer, thereby forming a second emitting part.
A second charge generation layer was formed on the second emitting part in the same manner as used to form the first charge generation layer.
A third emitting part was formed on the second charge generation layer in the same manner as used to form the second emitting part.
A third charge generation layer was formed on the third emitting part in the same manner as used to form the first charge generation layer.
HT3 was deposited on the third charge generation layer to form a layer having a thickness of 10 nm, Compound 1-1 (host):Ir(ppy)3 (dopant) were co-deposited thereon to a weight ratio of 98: 2 to form a fourth emission layer having a thickness of 10 nm. Yb was deposited on the fourth emission layer to form a layer having a thickness of 1 nm, thereby forming a fourth emitting part.
Ag and Mg were co-deposited on the fourth emitting part to a weight ratio of 9: 1 to form a cathode having a thickness of 100 nm, thereby completing the manufacture of a light-emitting device.
A light-emitting device was manufactured in the same manner as in Example 1-1, except that ET47 was used instead of ET46 for the first emitting part of Example 1-1 in forming a first hole blocking layer.
A light-emitting device was manufactured in the same manner as in Example 1-1, except that HT47 was used instead of TCTA for the first emitting part of Example 1-1 in forming a first electron blocking layer.
The refractive index at a wavelength of 450 nm of the compounds used in Examples 1-1 and 1-2 and Comparative Example 1-1 were measured using an Elipsometer (manufactured by J.A. Woollam Co., RC2), and the results are shown in Table 1.
To evaluate the characteristics of the light-emitting devices manufactured according to Examples 1-1 and 1-2 and Comparative Example 1-1, the luminescence efficiency at a current density of 10 mA/cm2 thereof was measured using a source meter (manufactured by Keithley Instrument, 2400 series) and a luminance meter PR650, and the results are shown in Table 1. The luminescence efficiency in Table 1 is shown on a percentage basis compared to the luminescence efficiency of Comparative Example 1-1.
In Table 1, the electron blocking layer, the first emission layer, the second emission layer, and the hole blocking layer are identical to the first to third electron blocking layers, the first first to first third emission layers, the second first to second third emission layers, and the first to third hole blocking layers of the first to third emitting parts. The first to third emitting parts emitted blue fluorescence, and the fourth emitting part emitted green phosphorescence.
From Table 1, it was confirmed that the light-emitting devices of Examples 1-1 and 1-2 have excellent luminescence efficiency characteristics compared to those of Comparative Example 1-1.
As an anode, a glass substrate with 15 Ω/cm2 (1,200 Å) ITO thereon, which was manufactured by Corning Inc., was cut to a size of 50 mm × 50 mm × 0.5 mm, and the glass substrate was sonicated by using isopropyl alcohol and pure water for 15 minutes each, and then ultraviolet light was irradiated for 30 minutes thereto and ozone was exposed thereto for cleaning. The resultant glass substrate was loaded onto a vacuum deposition apparatus.
P1 was vacuum-deposited on the ITO anode to form a hole injection layer having a thickness of 10 nm, and HT3 was vacuum-deposited on the hole injection layer to form a hole transport layer having a thickness of 100 nm. TCTA was vacuum-deposited on the hole transport layer to form an electron blocking layer having a thickness of 5 nm.
Compound 1-1 (first host): DF13 (first dopant) were co-deposited on the electron blocking layer to a weight ratio of 98: 2 to form a first emission layer having a thickness of 10 nm. Compound 2-1 (second host): DF13 (second dopant) were co-deposited on the first emission layer to a weight ratio of 98: 2 to form a second emission layer having a thickness of 10 nm.
Subsequently, ET46 was deposited on the second emission layer to form a hole blocking layer having a thickness of 5 nm, ET37 was deposited on the hole blocking layer to form an electron transport layer having a thickness of 10 nm, and Yb was deposited on the electron transport layer to form an electron injection layer having a thickness of 1 nm.
Ag: Mg were co-deposited on the electron injection layer to a weight ratio of 97: 3 to form an electrode having a thickness of 10 nm, thereby completing the manufacture of a light-emitting device.
A light-emitting device was manufactured in the same manner as in Example 2-1, except that the compounds in Table 2 were used in forming the electron blocking layer, the host of the first emission layer, the host of the second emission layer, and the hole blocking layer of Example 2-1.
The refractive index at a wavelength of 450 nm of the compounds used in Examples 1-1 to 1-4 and Comparative Examples 1-1 to 1-7 were measured using an Elipsometer (manufactured by J.A. Woollam Co., RC2), and the results are shown in Table 2.
To evaluate the characteristics of the light-emitting devices manufactured according to Example 2-1 and Comparative Examples 2-1 to 2-3, the luminescence efficiency at a current density of 10 mA/cm2 thereof was measured using a source meter (manufactured by Keithley Instrument, 2400 series) and a luminance meter PR650, and the results are shown in Table 2. The luminescence efficiency in Table 2 is shown on a percentage basis compared to the luminescence efficiency of Comparative Example 1-1.
From Table 2, it was confirmed that the light-emitting devices of Example 2-1 has excellent luminescence efficiency characteristics compared to those of Comparative Examples 2-1 to 2-3.
After deriving compounds satisfying the refractive indices of Table 3 by simulation, a simulation evaluation was performed according to Evaluation Example 3 on a light-emitting device identical to Example 2-1 except for including the compounds as an electron blocking layer, a first emission layer, a second emission layer, and a hole blocking layer, respectively.
A simulation evaluation of the refractive indices of the compounds the luminescence efficiency of the light-emitting devices of Examples 3-1 to 3-3 and Comparative Examples 3-1 to 3-4 were performed using FDTD (manufactured by Lumerical) and LightTools (manufactured by Synopsys). The luminescence efficiency in Table 3 is shown on a percentage basis compared to the luminescence efficiency of Comparative Example 2-1.
From Table 3, it was confirmed that the light-emitting devices of Examples 3-1 to 3-3 have excellent luminescence efficiency characteristics compared to those of Comparative Examples 2-1 and 3-1 to 3-4.
Accordingly, due to the increase in light extraction efficiency, the light-emitting device may have excellent luminescence efficiency and a long lifespan, and thus may be used for manufacturing a high-quality electronic apparatus.
Embodiments have been disclosed herein, and although terms are employed, they are used and are to be interpreted in a generic and descriptive sense only and not for purpose of limitation. In some instances, as would be apparent by one of ordinary skill in the art, features, characteristics, and/or elements described in connection with an embodiment may be used singly or in combination with features, characteristics, and/or elements described in connection with other embodiments unless otherwise specifically indicated. Accordingly, it will be understood by those of ordinary skill in the art that various changes in form and details may be made without departing from the spirit and scope of the disclosure as set forth in the claims.
| Number | Date | Country | Kind |
|---|---|---|---|
| 10-2022-0007353 | Jan 2022 | KR | national |
