Patent Application
20250098397
This application claims priority to and benefits of Korean Patent Application No. 10-2023-0123318 under 35 U.S.C. § 119, filed on Sep. 15, 2023, in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference.
Embodiments relate to a light-emitting device and an electronic apparatus including the same.
Organic light-emitting devices are self-emissive devices that have wide viewing angles, high contrast ratios, short response times, and excellent characteristics in terms of luminance, driving voltage, and response speed, compared to devices in the art.
In an example, an organic light-emitting device may have a structure in which a first electrode is arranged on a substrate, and a hole transport region, an emission layer, an electron transport region, and a second electrode may be sequentially formed on the first electrode. Holes provided from the first electrode move toward the emission layer through the hole transport region, and electrons provided from the second electrode move toward the emission layer through the electron transport region. Carriers, such as holes and electrons, recombine in the emission layer to produce excitons. The excitons may transition from an excited state to a ground state, thereby generating light.
It is to be understood that this background of the technology section is, in part, intended to provide useful background for understanding the technology. However, this background of the technology section may also include ideas, concepts, or recognitions that were not part of what was known or appreciated by those skilled in the pertinent art prior to a corresponding effective filing date of the subject matter disclosed herein.
Embodiments include a light-emitting device having improved efficiency and an electronic apparatus including the same.
Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the embodiments of the disclosure.
According to embodiments, a light-emitting device may include a first electrode, a second electrode facing the first electrode, and an organic layer between the first electrode and the second electrode, wherein the organic layer may include m emitting units, and m−1 charge generation units, each arranged between every two adjacent emitting units among the m emitting units. Each of the m emitting units may include a first subpixel, a second subpixel, and a third subpixel, and m may be an integer of 2 or more. The m emitting units may include a first emitting unit and a second emitting unit, and the first emitting unit may include a 1-1 emission layer, a 2-1 emission layer, and a 3-1 emission layer. The 1-1 emission layer may be arranged on the first subpixel of the first emitting unit and may emit first-color light, the 2-1 emission layer may be arranged on the second subpixel of the first emitting unit and may emit second-color light, and the 3-1 emission layer may be commonly arranged on the first subpixel, the second subpixel, and the third subpixel of the first emitting unit and may emit third-color light. The 1-1 emission layer may include a 1-1 host, the 2-1 emission layer may include a 2-1 host, and the 3-1 emission layer may include a 3-1 host. A lowest unoccupied molecular orbital (LUMO) energy (LUMO1-1) level of the 1-1 host, a LUMO energy (LUMO2-1) level of the 2-1 host, and a LUMO energy (LUMO3-1) level of the 3-1 host may satisfy Conditions a1 and b1:
LUMO1-1<LUMO3-1 [Condition a1]
LUMO2-1<LUMO3-1. [Condition b1]
In an embodiment, the first-color light may be red light, the second-color light may be green light, and the third-color light may be blue light.
In an embodiment, the m−1 charge generation units may each include an n-type charge generation layer and a p-type charge generation layer.
In an embodiment, the second emitting unit may include a 1-2 emission layer, a 2-2 emission layer, and a 3-2 emission layer; the 1-2 emission layer may be arranged on the first subpixel of the second emitting unit and may emit first-color light; the 2-2 emission layer may be arranged on the second subpixel of the second emitting unit and may emit second-color light; and the 3-2 emission layer:
In an embodiment, the LUMO1-1 level, the LUMO2-1 level, and the LUMO3-1 level may satisfy Conditions c1 and d1, which are explained below.
In an embodiment, the 3-1 emission layer may be arranged on or under the 1-1 emission layer and the 2-1 emission layer.
In an embodiment, the 1-1 host and the 2-1 host may each independently be a compound that includes a nitrogen-containing C1-C60 heteroaryl group.
In an embodiment, the 1-1 host and the 2-1 host may each independently be a compound represented by Formula 1, which is explained below.
In an embodiment, L1 to L3 may each independently be a single bond, a C6-C30 arylene group unsubstituted or substituted with at least one R10a, or a C1-C30 heteroarylene group unsubstituted or substituted with at least one R10a.
In an embodiment, Ar1 to Ar3 may each independently be hydrogen, deuterium, —F, —Cl, —Br, —I, a cyano group, a C1-C60 alkyl group, a C2-C60 alkenyl group, a C6-C60 aryl group unsubstituted or substituted with at least one R10a, a C1-C60 heteroaryl group unsubstituted or substituted with at least one R10a, or —Si(Q1)(Q2)(Q3).
In an embodiment, R1 and R2 may each independently be hydrogen, deuterium, —F, —Cl, —Br, —I, a cyano group, a C1-C60 alkyl group, a C2-C60 alkenyl group, a C6-C60 aryl group unsubstituted or substituted with at least one R10a, or a C1-C60 heteroaryl group unsubstituted or substituted with at least one R10a.
In an embodiment, the 1-1 host and the 2-1 host may each independently be selected from compounds which are explained below
In an embodiment, the first emitting unit may include a first hole transport region and a first electron transport region, and the second emitting unit may include a second hole transport region and a second electron transport region.
In an embodiment, the first electrode may be an anode; the second electrode may be a cathode; the first hole transport region and the second hole transport region may each independently include a hole injection layer, a hole transport layer, an emission auxiliary layer, an electron blocking layer, or any combination thereof; and the first electron transport region and the second electron transport region may each independently include a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, an electron injection layer, or any combination thereof.
In an embodiment, the first electron transport region may include a first electron-transporting material; and a lowest unoccupied molecular orbital (LUMO) energy (LUMOET1) level of the first electron-transporting material and a LUMO energy (LUMO3-1) level of the 3-1 host may satisfy Condition e1, which is described below.
In an embodiment, the first electron transport region may include a first electron-transporting material; and a lowest unoccupied molecular orbital (LUMO) energy (LUMOET1) level of the first electron-transporting material and a LUMO energy (LUMO3-1) level of the 3-1 host may satisfy Condition f1, which is described below.
In an embodiment, the light-emitting device may further include: a first capping layer outside the first electrode; or a second capping layer outside the second electrode.
Embodiments provide an electronic apparatus which may include the light-emitting device.
In an embodiment, the electronic apparatus may further include a thin-film transistor, wherein the thin-film transistor may include a source electrode and a drain electrode, and the first electrode of the light-emitting device may be electrically connected to the source electrode or the drain electrode.
In an embodiment, the electronic apparatus may further include a color filter, a color conversion layer, a touch screen layer, a polarizing layer, or any combination thereof.
It is to be understood that the embodiments above are described in a generic and explanatory sense only and not for the purpose of limitation, and the disclosure is not limited to the embodiments described above.
The above and other aspects and features of the disclosure will be more apparent by describing in detail embodiments thereof with reference to the accompanying drawings, in which:
The disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which embodiments are shown. This disclosure may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
In the drawings, the sizes, thicknesses, ratios, and dimensions of the elements may be exaggerated for ease of description and for clarity. Like reference numbers and/or like reference characters refer to like elements throughout.
In the description, it will be understood that when an element (or region, layer, part, etc.) is referred to as being “on”, “connected to”, or “coupled to” another element, it can be directly on, connected to, or coupled to the other element, or one or more intervening elements may be present therebetween. In a similar sense, when an element (or region, layer, part, etc.) is described as “covering” another element, it can directly cover the other element, or one or more intervening elements may be present therebetween.
In the description, when an element is “directly on,” “directly connected to,” or “directly coupled to” another element, there are no intervening elements present. For example, “directly on” may mean that two layers or two elements are disposed without an additional element such as an adhesion element therebetween.
As used herein, the expressions used in the singular such as “a,” “an,” and “the,” are intended to include the plural forms as well, unless the context clearly indicates otherwise.
As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items. For example, “A and/or B” may be understood to mean “A, B, or A and B.” The terms “and” and “or” may be used in the conjunctive or disjunctive sense and may be understood to be equivalent to “and/or”.
In the specification and the claims, the term “at least one of” is intended to include the meaning of “at least one selected from the group consisting of” for the purpose of its meaning and interpretation. For example, “at least one of A, B, and C” may be understood to mean A only, B only, C only, or any combination of two or more of A, B, and C, such as ABC, ACC, BC, or CC. When preceding a list of elements, the term, “at least one of,” modifies the entire list of elements and does not modify the individual elements of the list.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. Thus, a first element could be termed a second element without departing from the teachings of the disclosure. Similarly, a second element could be termed a first element, without departing from the scope of the disclosure.
The spatially relative terms “below”, “beneath”, “lower”, “above”, “upper”, or the like, may be used herein for ease of description to describe the relations between one element or component and another element or component as illustrated in the drawings. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation, in addition to the orientation depicted in the drawings. For example, in the case where a device illustrated in the drawing is turned over, the device positioned “below” or “beneath” another device may be placed “above” another device. Accordingly, the illustrative term “below” may include both the lower and upper positions. The device may also be oriented in other directions and thus the spatially relative terms may be interpreted differently depending on the orientations.
The terms “about” or “approximately” as used herein is inclusive of the stated value and means within an acceptable range of deviation for the recited value as determined by one of ordinary skill in the art, considering the measurement in question and the error associated with measurement of the recited quantity (i.e., the limitations of the measurement system). For example, “about” may mean within one or more standard deviations, or within +20%, +10%, or +5% of the stated value.
It should be understood that the terms “comprises,” “comprising,” “includes,” “including,” “have,” “having,” “contains,” “containing,” and the like are intended to specify the presence of stated features, integers, steps, operations, elements, components, or combinations thereof in the disclosure, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.
Unless otherwise defined or implied herein, all terms (including technical and scientific terms) used have the same meaning as commonly understood by those skilled in the art to which this disclosure pertains. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and should not be interpreted in an ideal or excessively formal sense unless clearly defined in the specification.
The term “organic layer” as used herein may be a single layer and/or multiple layers between a first electrode and a second electrode of a light-emitting device.
The nomenclature of 1-1, 2-1, and 3-1 may also be respectively considered herein as first-first, second-first, and third-first. However, these are only non-limiting descriptors and other combinations can be used. For example, 3-2 may be considered as third-second. It is to be understood that, for example, 1-second and first-2 may each be considered as first-second and may be interchangeable.
An embodiment provides a light-emitting device which may include: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer may include: m emitting units; and m−1 charge generation units, each arranged between every two adjacent emitting units among the m emitting units. Each of the m emitting units may include a first subpixel, a second subpixel, and a third subpixel; and m may be an integer of 2 or more. The m emitting units may include a first emitting unit and a second emitting unit, wherein the first emitting unit may include a 1-1 emission layer, a 2-1 emission layer, and a 3-1 emission layer. The 1-1 emission layer may be arranged on the first subpixel of the first emitting unit and may emit first-color light, the 2-1 emission layer may be arranged on the second subpixel of the first emitting unit and may emit second-color light, and the 3-1 emission layer may be commonly arranged over the first subpixel, the second subpixel, and the third subpixel of the first emitting unit and may emit third-color light. The 1-1 emission layer may include a 1-1 host, the 2-1 emission layer may include a 2-1 host, and the 3-1 emission layer may include a 3-1 host. A lowest unoccupied molecular orbital (LUMO) energy (LUMO1-1) level of the 1-1 host, a LUMO energy (LUMO2-1) level of the 2-1 host, and a LUMO energy (LUMO3-1) level of the 3-1 host may satisfy Conditions a1 and b1:
LUMO1-1<LUMO3-1 [Condition a1]
LUMO2-1<LUMO3-1. [Condition b1]
The first-color light, the second-color light, and the third-color light may be identical to or different from one another.
In an embodiment, the first-color light may be red light, the second-color light may be green light, and the third-color light may be blue light.
In an embodiment, the LUMO1-1 level, the LUMO2-1 level, and the LUMO3-1 level may satisfy Conditions c1 and d1:
0 eV<LUMO3-1−LUMO1-1≤0.5 eV [Condition c1]
0 eV<LUMO3-1−LUMO2-1≤0.5 eV. [Condition d1]
In an embodiment, the 3-1 emission layer may be arranged on the 1-1 emission layer and the 2-1 emission layer.
In embodiments, the 3-1 emission layer may be arranged under the 1-1 emission layer and the 2-1 emission layer.
In an embodiment, the second emitting unit may include a 1-2 emission layer, a 2-2 emission layer, and a 3-2 emission layer, wherein the 1-2 emission layer may be arranged on the first subpixel of the second emitting unit and may emit first-color light, the 2-2 emission layer may be arranged on the second subpixel of the second emitting unit and may emit second-color light, and the 3-2 emission layer may be commonly arranged over the first subpixel of the second emitting unit, the second subpixel of the second emitting unit, and a third subpixel of the second emitting unit and may emit third-color light. The 1-2 emission layer may include a 1-2 host, the 2-2 emission layer may include a 2-2 host, and the 3-2 emission layer may include a 3-2 host.
In embodiments, the second emitting unit may include a 1-2 emission layer, a 2-2 emission layer, and a 3-3 emission layer, wherein the 1-2 emission layer may be arranged on the first subpixel of the second emitting unit and may emit first-color light, the 2-2 emission layer may be arranged on the second subpixel of the second emitting unit and may emit second-color light, and the 3-3 emission layer may be arranged on a third subpixel of the second emitting unit and may emit third-color light. The 1-2 emission layer may include a 1-2 host, the 2-2 emission layer may include a 2-2 host, and the 3-3 emission layer may include a 3-3 host.
In an embodiment, the LUMO1-2 level of the 1-2 host, the LUMO2-2 level of the 2-2 host, and the LUMO3-2 level of the 3-2 host may satisfy Conditions a2 and b2:
LUMO1-2<LUMO3-2 [Condition a2]
LUMO2-2<LUMO3-2. [Condition b2]
In embodiments, the LUMO1-2 level, the LUMO2-2 level, and the LUMO3-2 level may satisfy Conditions c2 and d2:
0 eV<LUMO3-2−LUMO1-2≤0.5 eV [Condition c2]
0 eV<LUMO3-2−LUMO2-2≤0.5 eV. [Condition d2]
In an embodiment, the 3-2 emission layer may be arranged on the 1-2 emission layer and the 2-2 emission layer.
In an embodiment, the 3-2 emission layer may be arranged under the 1-2 emission layer and the 2-2 emission layer.
The first emitting unit and the second emitting unit may have a same structure or different structures from each other.
In an embodiment, the first emitting unit may be arranged closest to the first electrode, and the second emitting unit may be arranged closest to the second electrode.
In embodiments, the second emitting unit may be arranged closest to the first electrode, and the first emitting unit may be arranged closest to the second electrode.
In an embodiment, the 1-1 host, the 2-1 host, the 1-2 host, and the 2-2 host may each independently be a compound that includes a nitrogen-containing C1-C60 heteroaryl group. For example, the 1-1 host, the 2-1 host, the 1-2 host, and the 2-2 host may each independently be a compound that includes an electron-accepting group.
In an embodiment, the 1-1 host, the 2-1 host, the 1-2 host, and the 2-2 host may each independently be a compound represented by Formula 1:
In an embodiment, in Formula 1, L1 to L3 may each independently be a single bond, a C6-C30 arylene group unsubstituted or substituted with at least one R10a, or a C1-C60 heteroarylene group unsubstituted or substituted with at least one R10a.
In an embodiment, in Formula 1, Ar1 to Ar3 may each independently be hydrogen, deuterium, —F, —Cl, —Br, —I, a cyano group, a C1-C60 alkyl group, a C2-C60 alkenyl group, a C6-C60 aryl group unsubstituted or substituted with at least one R10a, a C1-C60 heteroaryl group unsubstituted or substituted with at least one R10a, or —Si(Q1)(Q2)(Q3).
In an embodiment, in Formula 1, R1 and R2 may each independently be hydrogen, deuterium, —F, —Cl, —Br, —I, a cyano group, a C1-C60 alkyl group, a C2-C60 alkenyl group, a C6-C60 aryl group unsubstituted or substituted with at least one R10a, or a C1-C60 heteroaryl group unsubstituted or substituted with at least one R10a.
In an embodiment, the 1-1 host, the 2-1 host, the 1-2 host, and the 2-2 host may each not include an anthracene group.
In an embodiment, the 1-1 host, the 2-1 host, the 1-2 host, and the 2-2 host may each independently be selected from the following compounds:
In an embodiment, the 3-1 host and the 3-2 host may each independently be selected from the following compounds:
The number of emitting units, m, may vary according to the purpose, and the upper limit of the number is not particularly limited. In an embodiment, the light-emitting device may include 2, 3, 4, 5, or 6 emitting units. The emitting unit is not particularly limited as long as it has a function capable of emitting light. In an embodiment, the emitting unit may include one or more emission layers. In an embodiment, the emitting unit may further include an organic layer other than the emission layer.
The emission layers included in the m emitting units may each independently emit red light, green light, blue light, and/or white light. For example, an emission layer(s) included in a emitting units among the m emitting units may emit blue light, an emission layer(s) included in b emitting units may emit red light, an emission layer(s) included in c emitting units may emit green light, and an emission layer(s) included in d emitting units may emit white light. The sum of a, b, c, and d, each of which are an integer of 0 or more, may be m.
In an embodiment, a maximum emission wavelength of light emitted from at least one of the m emitting units may be different from a maximum emission wavelength of light emitted from at least one emitting unit among the remaining emitting units. In an embodiment, in a light-emitting device in which a first emitting unit and a second emitting unit are stacked, a maximum emission wavelength of light emitted from the first emitting unit may be different from a maximum emission wavelength of light emitted from the second emitting unit. In an embodiment, emission layers of the first emitting unit and the second emitting unit may each independently have a structure consisting of a layer consisting of a single material, a structure consisting of a layer including different materials, and a structure including multiple layers including different materials. Accordingly, light emitted from the first emitting unit or the second emitting unit may be single-color light or mixed-color light.
In an embodiment, a maximum emission wavelength of light emitted from the m emitting units may all be the same.
In an embodiment, m emission layers included in the m emitting units may each independently include a phosphorescent dopant, a fluorescent dopant, a delayed fluorescence material, or any combination thereof.
A charge generation layer may each be included between every two adjacent emitting units among the m emitting units. The term “adjacent” refers to an arrangement relationship of emitting units arranged closest to each other among multiple adjacent emitting units. In an embodiment, the “two adjacent emitting units” may be an arrangement relationship of two emitting units arranged closest to each other from among the emitting units. The term “adjacent” may be a case where two layers physically contact each other, or a case where another layer, not mentioned, may be between the two layers. For example, “the emitting unit adjacent to the second electrode” may be the emitting unit arranged closest to the second electrode. The second electrode and the emitting unit may physically contact each other, but layers other than the emitting unit may be between the second electrode and the emitting unit. In an embodiment, an electron transport layer may be between the second electrode and the emitting unit. Here, the charge generation layer may be arranged between every two adjacent emitting units.
The “charge generation layer” may generate electrons with respect to one emitting unit of two adjacent emitting units, and thus may serve as a cathode. The “charge generation layer” may generate holes with respect to the other emitting unit, and thus may serve as an anode. In this regard, the charge generation layer refers to a layer that is not directly connected to an electrode and separates adjacent emitting units. A light-emitting device including m emitting units may include m−1 charge generation layer(s).
The charge generation layer may include an n-type charge generation layer and a p-type charge generation layer. In an embodiment, the n-type charge generation layer and the p-type charge generation layer may contact (e.g., directly contact) each other to form an NP junction. By the NP junction, electrons and holes may be generated between the n-type charge generation layer and the p-type charge generation layer. The generated electrons may be transferred to one of the two adjacent emitting units through the n-type charge generation layer. The generated holes may be transferred to the other one of the two adjacent emitting units through the p-type charge generation layer. In an embodiment, the m−1 charge generation layer(s) may each include an n-type charge generation layer and an p-type charge generation layer. Thus, the light-emitting device including m−1 charge generation layer(s) may include m−1 n-type charge generation layer(s) and m−1 p-type charge generation layer(s).
The n-type refers to n-type semiconductor characteristics, that is, the characteristics of injecting or transporting electrons. The p-type refers to p-type semiconductor characteristics, that is, the characteristics of injecting or transporting holes.
The m emitting units may each include a hole transport region, the emission layer, and an electron transport region arranged in the stated order. In an embodiment, the first emitting unit may include a first hole transport region and a first electron transport region, and the second emitting unit may include a second hole transport region and a second electron transport region.
In an embodiment, the first emitting unit may include a first electron transport region that includes a first electron-transporting material, and a LUMO energy (LUMOET1) level of the first electron-transporting material and a LUMO energy (LUMO3-1) level of the 3-1 host may satisfy Condition e1:
LUMO3-1≥LUMOET1. [Condition e1]
In embodiments, the first emitting unit may include a first electron transport region that includes a first electron-transporting material, and a LUMO energy (LUMOET1) level of the first electron-transporting material and a LUMO energy (LUMO3-1) level of the 3-1 host may satisfy Condition f1:
0 eV≤LUMO3-1−LUMOET1≤0.3 eV. [Condition f1]
In an embodiment, the second emitting unit may include a second electron transport region that includes a second electron-transporting material, and a LUMO energy (LUMOET2) level of the second electron-transporting material and a LUMO energy (LUMO3-2) level of the 3-2 host may satisfy Condition e2:
LUMO3-2≥LUMOET2. [Condition e2]
In embodiments, the second emitting unit may include a second electron transport region that includes a second electron-transporting material, and a LUMO energy (LUMOET2) level of the second electron-transporting material and a LUMO energy (LUMO3-2) level of the 3-2 host may satisfy Condition f2:
0 eV≤LUMO3-2−LUMOET2≤0.3 eV. [Condition f2]
In the light-emitting device satisfying Condition e1 and/or Condition e2, electron injection from the first electron transport region to the 3-1 emission layer and/or electron injection from the second electron transport region to the 3-2 emission layer may be facilitated. In the light-emitting device satisfying Condition f1 and/or Condition f2, excessive gap formation may result in a high injection barrier, which increases driving voltage and prevents deterioration of materials.
The light-emitting device may be a tandem device in which at least one emitting unit includes a common emission layer commonly arranged over a first subpixel, a second subpixel, and a third subpixel, and the common emission layer may be blue-color common emission layer. In the case of a tandem device in which two or more emitting units each include a common emission layer, multiple emitting units that emit light may be included so that the efficiency of the device may be significantly improved compared to a light-emitting device consisting of a single stack including a common emission layer. Accordingly, the current stress on the device may be reduced, thereby improving the lifespan of the device.
In an embodiment, the first emitting unit may satisfy the conditions in which the LUMO energy level of the 1-1 host is smaller than the LUMO energy level of the 3-1 host and the LUMO energy level of the 2-1 host is smaller than the LUMO energy level of the 3-1 host, and thus there is no barrier when electrons are injected from the 3-1 emission layer, which is a common emission layer, to the 1-1 emission layer and the 2-1 emission layer. In this regard, due to the common emission layer, driving voltage may be minimized.
Therefore, the light-emitting device, for example, an organic light-emitting device, may have high luminescence efficiency and a long lifespan.
In an embodiment, a process of manufacturing the light-emitting device may be simplified by including a blue-color common emission layer, and thus the processability of the light-emitting device may be improved compared to a light-emitting device that does not include a blue-color common emission layer.
In an embodiment, the first electrode may be an anode; the second electrode may be a cathode; the first hole transport region and the second hole transport region may each independently include a hole injection layer, a hole transport layer, an emission auxiliary layer, an electron blocking layer, or any combination thereof; and the first electron transport region and the second electron transport region may each independently include a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, an electron injection layer, or any combination thereof.
In an embodiment, the light-emitting device may further include a first capping layer outside the first electrode or a second capping layer outside the second electrode.
Another embodiment provides an electronic apparatus which may include the light-emitting device. The electronic apparatus may further include a thin-film transistor. In an embodiment, the electronic apparatus may further include a thin-film transistor including a source electrode and a drain electrode, wherein the first electrode of the light-emitting device may be electrically connected to the source electrode or the drain electrode. In an embodiment, the electronic apparatus may further include a color filter, a color conversion layer, a touch screen layer, a polarizing layer, or any combination thereof. Further details on the electronic apparatus may be the same as described herein.
As shown in
The light-emitting device 20 may include a first emitting unit 150-1 and a second emitting unit 150-2.
The first emitting unit 150-1 and the second emitting unit 150-2 may each include a first subpixel, a second subpixel, and a third subpixel.
The first emitting unit 150-1 may include a first hole transport region 140-1, a first emission layer 152-1, and a first electron transport region 160-1 that are stacked in the stated order.
The first emission layer 152-1 may include a 1-1 emission layer 152a-1, a 2-1 emission layer 152b-1, and a 3-1 emission layer 152c-1.
The 1-1 emission layer 152a-1 may be arranged on a first subpixel SP1 of the first emitting unit, the 2-1 emission layer 152b-1 may be arranged on a second subpixel SP2 of the first emitting unit, and the 3-1 emission layer 152c-1 may be commonly arranged on the first subpixel SP1, the second subpixel SP2, and a third subpixel SP3 of the first emitting unit.
The second emitting unit 150-2 may include a second hole transport region 140-2, a second emission layer 152-2, and a second electron transport region 160-2 that are stacked in the stated order.
The second emission layer 152-2 may include a 1-2 emission layer 152a-2, a 2-2 emission layer 152b-2, and a 3-2 emission layer 152c-2.
The 1-2 emission layer 152a-2 may be arranged on a first subpixel SP1 of the second emitting unit, the 2-2 emission layer 152b-2 may be arranged on a second subpixel SP2 of the second emitting unit, and the 3-2 emission layer 152c-2 may be commonly arranged on the first emissionSP1, the second subpixel SP2, and a third subpixelSP3 of the second emitting unit.
The first and second electron transport regions 160-1 and 160-2 may each independently include a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, an electron injection layer, or any combination thereof.
The first electron transport region 160-1 may include a first electron-transporting material, and the second electron transport region 160-2 may include a second electron-transporting material. The first electron-transporting material and the second electron-transporting materials may be the same as described herein.
The light-emitting device 20 may include a first charge generation layer 170-1 between the first emitting unit 150-1 and the second emitting unit 150-2.
The first charge generation layer 170-1 may include a first n-type charge generation layer 171-1 and a first p-type charge generation layer 172-1. The first n-type charge generation layer 171-1 may contact (e.g., directly contact) the first p-type charge generation layer 172-1.
Hereinafter, a structure of the light-emitting device 20 according to an embodiment and a method of manufacturing the light-emitting device 20 will be described with reference to
In
The first electrode 110 may be formed by, for example, depositing or sputtering a material for forming the first electrode 110 on the substrate. When the first electrode 110 is an anode, a material for forming the first electrode 110 may be a high-work function material that facilitates injection of holes.
The first electrode 110 may be a reflective electrode, a semi-transmissive electrode, or a transmissive electrode. In an embodiment, when the first electrode 110 is a transmissive electrode, a material for forming the first electrode 110 may include indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), or any combination thereof. In embodiments, when the first electrode 110 is a semi-transmissive electrode or a reflective electrode, a material for forming the first electrode 110 may include magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al—Li), calcium (Ca), magnesium-indium (Mg—In), magnesium-silver (Mg—Ag), or any combination thereof.
The first electrode 110 may have a structure consisting of a single layer or a structure including multiple layers. For example, the first electrode 110 may have a three-layer structure of ITO/Ag/ITO.
The organic layer 150 may be arranged on the first electrode 110. The organic layer 150 may include emission layers 152-1 and 152-2.
In an embodiment, the organic layer 150 may include two emitting units 150-1 and 150-2 that are stacked between the first electrode 110 and the second electrode 190, and the charge generation layer 170-1 between the two emitting units 150-1 and 150-2. In an embodiment, when the organic layer 150 includes the emitting units 150-1 and 150-2 and the charge generation layer 170-1, the light-emitting device 10 may be a tandem light-emitting device.
The two light-emitting units 150-1 and 150-2 may respectively include the hole transport region 140-1 and 140-2, the emission layer 152-1 and 152-2, and the electron transport region 160-1 and 160-2, that are stacked in their respective order.
The organic layer 150 may further include a metal-containing compound, such as an organometallic compound, an inorganic material, such as a quantum dot, or the like, in addition to various organic materials.
The hole transport region 140-1 and 140-2 may each have a structure consisting of a layer consisting of a single material, a structure consisting of a layer including different materials, or a structure including multiple layers including different materials.
The hole transport region 140-1 and 140-2 may each independently include a hole injection layer, a hole transport layer, an emission auxiliary layer, an electron blocking layer, or any combination thereof.
For example, the hole transport region 140-1 and 140-2 may each independently have a multi-layer structure including a hole injection layer/hole transport layer structure, a hole injection layer/hole transport layer/emission auxiliary layer structure, a hole injection layer/emission auxiliary layer structure, a hole transport layer/emission auxiliary layer structure, or a hole injection layer/hole transport layer/electron blocking layer structure, wherein the layers of each structure may be stacked from the first electrode 110 in its respective stated order, but the structure of the hole transport region 140-1 and 140-2 is not limited thereto.
In an embodiment, the hole transport region 140-1 and 140-2 may each independently include a compound represented by Formula 201, a compound represented by Formula 202, or any combination thereof:
In Formulae 201 and 202,
In embodiments, the compound represented by Formula 201 and the compound represented by Formula 202 may each independently include at least one of groups represented by Formulae CY201 to CY217:
In Formulae CY201 to CY217, R10b and R10c may each independently be the same as described in connection with R10a, ring CY201 to ring CY204 may each independently be a C3-C20 carbocyclic group or a C1-C20 heterocyclic group, and at least one hydrogen in Formulae CY201 to CY217 may be unsubstituted or substituted with R10a.
In an embodiment, in Formulae CY201 to CY217, ring CY201 to ring CY204 may each independently be a benzene group, a naphthalene group, a phenanthrene group, or an anthracene group.
In embodiments, the compound represented by Formula 201 and the compound represented by Formula 202 may each independently include at least one of groups represented by Formulae CY201 to CY203.
In embodiments, the compound represented by Formula 201 may include at least one of groups represented by Formulae CY201 to CY203 and at least one of groups represented by Formulae CY204 to CY217.
In embodiments, in Formula 201, xa1 may be 1, R201 may be one of groups represented by Formulae CY201 to CY203, xa2 may be 0, and R202 may be one of groups represented by Formulae CY204 to CY207.
In embodiments, the compound represented by Formula 201 and the compound represented by Formula 202 may not include the groups represented by Formulae CY201 to CY203.
In embodiments, each of Formulae 201 and 202 may each not include groups represented by Formulae CY201 to CY203, and may each independently include at least one of groups represented by Formulae CY204 to CY217.
In embodiments, the compound represented by Formula 201 and the compound represented by Formula 202 may not include groups represented by Formulae CY201 to CY217.
In an embodiment, the hole transport region 140-1 and 140-2 may each independently include one of Compounds HT1 to HT46, m-MTDATA, TDATA, 2-TNATA, NPB (NPD), β-NPB, TPD, Spiro-TPD, Spiro-NPB, methylated NPB, TAPC, HMTPD, 4,4′,4″-tris(N-carbazolyl)triphenylamine (TCTA), polyaniline/dodecylbenzenesulfonic acid (PANI/DBSA), poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) (PEDOT/PSS), polyaniline/camphor sulfonic acid (PANI/CSA), polyaniline/poly(4-styrenesulfonate) (PANI/PSS), or any combination thereof:
A thickness of the hole transport region 140-1 and 140-2 may each independently be in a range of about 50 Å to about 10,000 Å. For example, the thickness of the hole transport region 140-1 and 140-2 may each independently be in a range of about 100 Å to about 4,000 Å. When the hole transport region 140-1 or 140-2 includes a hole injection layer, a hole transport layer, or any combination thereof, a thickness of the hole injection layer may each independently be in a range of about 100 Å to about 9,000 Å, and a thickness of the hole transport layer may each independently be in a range of about 50 Å to about 2,000 Å. For example, the thickness of the hole injection layer may each independently be in a range of about 100 Å to about 1,000 Å. For example, the thickness of the hole transport layer may each independently be in a range of about 100 Å to about 1,500 Å. When the thicknesses of the hole transport region 140-1 and 140-2, the hole injection layer, and the hole transport layer are within these ranges, satisfactory hole transporting characteristics may be obtained without a substantial increase in driving voltage.
The emission auxiliary layer may increase light emission efficiency by compensating for an optical resonance distance according to a wavelength of light emitted by the emission layer 152-1 or 152-2, and the electron blocking layer may block the leakage of electrons from the emission layer to the hole transport region 140-1 or 140-2. Materials that may be included in the hole transport region 140-1 and 140-2 may be included in the emission auxiliary layer and the electron blocking layer.
[p-Dopant]
The hole transport region 140-1 and 140-2 may each independently further include a charge-generation material for the improvement of conductive characteristics, in addition to the aforementioned materials. The charge-generation material may be uniformly or non-uniformly dispersed in the hole transport region 140-1 or 140-2 (for example, in the form of a single layer consisting of the charge-generation material).
The charge-generation material may be, for example, a p-dopant.
For example, the p-dopant may have a LUMO energy level may be equal to or less than about-3.5 eV.
In an embodiment, the p-dopant may include a quinone derivative, a cyano group-containing compound, a compound including element EL1 and element EL2, or any combination thereof.
Examples of a quinone derivative may include TCNQ, F4-TCNQ, and the like.
Examples of a cyano group-containing compound may include HAT-CN, a compound represented by Formula 221, and the like:
In Formula 221,
R221 to R223 may each independently be a C3-C60 carbocyclic group unsubstituted or substituted with at least one R10a or a C1-C60 heterocyclic group unsubstituted or substituted with at least one R10a, and
at least one of R221 to R223 may each independently be a C3-C60 carbocyclic group or a C1-C60 heterocyclic group, each substituted with: a cyano group; —F; —Cl; —Br; —I; a C1-C20 alkyl group substituted with a cyano group, —F, —Cl, —Br, —I, or any combination thereof; or any combination thereof.
In the compound including element EL1 and element EL2, element EL1 may be a metal, a metalloid, or any combination thereof, and element EL2 may be a non-metal, a metalloid, or any combination thereof.
Examples of a metal may include an alkali metal (for example, lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), etc.); an alkaline earth metal (for example, beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), etc.); a transition metal (for example, titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), etc.); a post-transition metal (for example, zinc (Zn), indium (In), tin (Sn), etc.); a lanthanide metal (for example, lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc.); and the like.
Examples of a metalloid may include silicon (Si), antimony (Sb), tellurium (Te), and the like.
Examples of a non-metal may include oxygen (O), a halogen (for example, F, Cl, Br, I, etc.), and the like.
Examples of a compound including element EL1 and element EL2 may include a metal oxide, a metal halide (for example, a metal fluoride, a metal chloride, a metal bromide, a metal iodide, etc.), a metalloid halide (for example, a metalloid fluoride, a metalloid chloride, a metalloid bromide, a metalloid iodide, etc.), a metal telluride, or any combination thereof.
Examples of a metal oxide may include a tungsten oxide (for example, WO, W2O3, WO2, WO3, W2O5, etc.), a vanadium oxide (for example, VO, V2O3, VO2, V2O5, etc.), a molybdenum oxide (MoO, Mo2O3, MoO2, MoO3, Mo2O5, etc.), a rhenium oxide (for example, ReO3, etc.), and the like.
Examples of a metal halide may include an alkali metal halide, an alkaline earth metal halide, a transition metal halide, a post-transition metal halide, a lanthanide metal halide, and the like.
Examples of an alkali metal halide may include LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI, RbI, CsI, and the like.
Examples of an alkaline earth metal halide may include BeF2, MgF2, CaF2, SrF2, BaF2, BeCl2, MgCl2, CaCl2), SrCl2, BaCl2, BeBr2, MgBr2, CaBr2, SrBr2, BaBr2, BeI2, MgI2, CaI2, SrI2, BaI2, and the like.
Examples of a transition metal halide may include a titanium halide (for example, TiF4, TiCl4, TiBr4, TiI4, etc.), a zirconium halide (for example, ZrF4, ZrCl4, ZrBr4, ZrI4, etc.), a hafnium halide (for example, HfF4, HfCl4, HfBr4, HfI4, etc.), a vanadium halide (for example, VF3, VCI3, VBr3, VI3, etc.), a niobium halide (for example, NbF3, NbCl3, NbBr3, NbI3, etc.), a tantalum halide (for example, TaF3, TaCl3, TaBr3, TaI3, etc.), a chromium halide (for example, CrF3, CrCl3, CrBr3, CrI3, etc.), a molybdenum halide (for example, MoF3, MoCl3, MoBr3, MoI3, etc.), a tungsten halide (for example, WF3, WCl3, WBr3, WI3, etc.), a manganese halide (for example, MnF2, MnCl2, MnBr2, MnI2, etc.), a technetium halide (for example, TcF2, TcCl2, TcBr2, TcI2, etc.), a rhenium halide (for example, ReF2, ReCl2, ReBr2, ReI2, etc.), an iron halide (for example, FeF2, FeCl2, FeBr2, FeI2, etc.), a ruthenium halide (for example, RuF2, RuCl2, RuBr2, RuI2, etc.), an osmium halide (for example, OsF2, OsCl2, OsBr2, OsI2, etc.), a cobalt halide (for example, CoF2, CoCl2, CoBr2, CoI2, etc.), a rhodium halide (for example, RhF2, RhCl2, RhBr2, RhI2, etc.), an iridium halide (for example, IrF2, IrCl2, IrBr2, IrI2, etc.), a nickel halide (for example, NiF2, NiCl2, NiBr2, NiI2, etc.), a palladium halide (for example, PdF2, PdCl2, PdBr2, PdI2, etc.), a platinum halide (for example, PtF2, PtCl2, PtBr2, PtI2, etc.), a copper halide (for example, CuF, CuCl, CuBr, CuI, etc.), a silver halide (for example, AgF, AgCl, AgBr, AgI, etc.), a gold halide (for example, AuF, AuCl, AuBr, AuI, etc.), and the like.
Examples of a post-transition metal halide may include a zinc halide (for example, ZnF2, ZnCl2, ZnBr2, ZnI2, etc.), an indium halide (for example, InI3, etc.), a tin halide (for example, SnI2, etc.), and the like.
Examples of a lanthanide metal halide may include YbF, YbF2, YbF3, SmF3, YbCl, YbCl2, YbCl3 SmCl3, YbBr, YbBr2, YbBr3 SmBr3, YbI, YbI2, YbI3, and SmI3.
Examples of a metalloid halide may include an antimony halide (for example, SbCl5, etc.) and the like.
Examples of a metal telluride may include an alkali metal telluride (for example, Li2Te, Na2Te, K2Te, Rb2Te, Cs2Te, etc.), an alkaline earth metal telluride (for example, BeTe, MgTe, CaTe, SrTe, BaTe, etc.), a transition metal telluride (for example, TiTe2, ZrTe2, HfTe2, V2Te3, Nb2Te3, Ta2Te3, Cr2Te3, Mo2Te3, W2Te3, MnTe, TcTe, ReTe, FeTe, RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu2Te, CuTe, Ag2Te, AgTe, Au2Te, etc.), a post-transition metal telluride (for example, ZnTe, etc.), a lanthanide metal telluride (for example, LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, etc.), and the like.
When the light-emitting device 20 is a full-color light-emitting device, the emission layer 152-1 and 152-2 may each independently be patterned into a red emission layer, a green emission layer, and/or a blue emission layer, according to each subpixel. In an embodiment, the emission layer 152-1 and 152-2 may each independently have a stacked structure of two or more layers among a red emission layer, a green emission layer, and a blue emission layer, in which the two or more layers may contact each other or may be separated from each other, to emit white light. In embodiments, the emission layer 152-1 and 152-2 may each independently include two or more materials among a red light-emitting material, a green light-emitting material, and a blue light-emitting material, in which the two or more materials may be mixed with each other in a single layer, to emit white light.
The emission layer 152-1 and 152-2 may each independently include a host and a dopant. The dopant may include a phosphorescent dopant, a fluorescent dopant, or any combination thereof.
An amount of the dopant in the emission layer 152-1 and 152-2 may each independently be in a range of about 0.01 parts by weight to about 15 parts by weight, based on 100 parts by weight of the host.
In embodiments, the emission layer 152-1 and 152-2 may each independently include quantum dots.
In embodiments, the emission layer 152-1 and 152-2 may each independently include a delayed fluorescence material. The delayed fluorescence material may serve as a host or as a dopant in the emission layer 152-1 and 152-2.
A thickness of the emission layer 152-1 and 152-2 may each independently be in a range of about 100 Å to about 1,000 Å. For example, the thickness of the emission layer 152-1 and 152-2 may each independently be in a range of about 200 Å to about 600 Å. When the thickness of the emission layer 152-1 and 152-2 is each within any of these ranges, excellent luminescence characteristics may be obtained without a substantial increase in driving voltage.
In an embodiment, the host may include a compound represented by Formula 301:
[Ar301]xb11-[(L301)xb1-R301]xb21 [Formula 301]
In Formula 301,
For example, in Formula 301, when xb11 is 2 or more, two or more of Ar301 may be linked to each other via a single bond.
In embodiments, the host may include a compound represented by Formula 301-1, a compound represented by Formula 301-2, or any combination thereof:
In Formulae 301-1 and 301-2,
In embodiments, the host may include an alkali earth metal complex, a post-transition metal complex, or any combination thereof. In embodiments, the host may include a Be complex (for example, Compound H55), an Mg complex, a Zn complex, or any combination thereof.
In embodiments, the host may include: one of Compounds H1 to H124; 9,10-di(2-naphthyl) anthracene (ADN); 2-methyl-9,10-bis(naphthalen-2-yl) anthracene (MADN); 9,10-di-(2-naphthyl)-2-t-butyl-anthracene (TBADN); 4,4′-bis(N-carbazolyl)-1,1′-biphenyl (CBP); 1,3-di-9-carbazolylbenzene (mCP); 1,3,5-tri (carbazol-9-yl)benzene (TCP); or any combination thereof:
The phosphorescent dopant may include at least one transition metal as a central metal.
The phosphorescent dopant may include a monodentate ligand, a bidentate ligand, a tridentate ligand, a tetradentate ligand, a pentadentate ligand, a hexadentate ligand, or any combination thereof.
The phosphorescent dopant may be electrically neutral.
In an embodiment, the phosphorescent dopant may include an organometallic compound represented by Formula 401:
M(L401)xc1(L402)xc2 [Formula 401]
In Formulae 401 and 402,
In an embodiment, in Formula 402, X401 may be nitrogen and X402 may be carbon, or X401 and X402 may each be nitrogen.
In embodiments, in Formula 402, when xc1 is 2 or more, two ring A401 (s) in two or more of L401 (s) may optionally be linked to each other via T402, which may be a linking group, or two ring A402 (s) may optionally be linked to each other via T403, which may be a linking group (see Compounds PD1 to PD4 and PD7). T402 and T403 may each independently be the same as described in connection with T401.
In Formula 401, L402 may be an organic ligand. For example, L402 may include a halogen group, a diketone group (for example, an acetylacetonate group), a carboxylic acid group (for example, a picolinate group), —C(═O), an isonitrile group, a —CN group, a phosphorus group (for example, a phosphine group, a phosphite group, etc.), or any combination thereof.
The phosphorescent dopant may include, for example, one of Compounds PD1 to PD39, or any combination thereof:
The fluorescent dopant may include an amine group-containing compound, a styryl group-containing compound, or any combination thereof.
In an embodiment, the fluorescent dopant may include a compound represented by Formula 501:
In Formula 501,
In an embodiment, in Formula 501, Ar501 may be a condensed cyclic group (for example, an anthracene group, a chrysene group, a pyrene group, etc.) in which three or more monocyclic groups are condensed together.
In an embodiment, xd4 in Formula 501 may be 2.
In an embodiment, the fluorescent dopant may include: one of Compounds FD1 to FD36; DPVBi; DPAVBi; or any combination thereof:
In embodiments, the emission layer 152-1 and 152-2 may each independently include a delayed fluorescence material.
In the specification, the delayed fluorescence material may be selected from compounds capable of emitting delayed fluorescence based on a delayed fluorescence emission mechanism.
The delayed fluorescence material included in the emission layer 152-1 or 152-2 may serve as a host or as a dopant, depending on the types of other materials included in the emission layer 152-1 or 152-2.
In an embodiment, a difference between a triplet energy level (eV) of the delayed fluorescence material and a singlet energy level (eV) of the delayed fluorescence material may be in a range of about 0 eV to about 0.5 eV. When the difference between the triplet energy level (eV) of the delayed fluorescence material and the singlet energy level (eV) of the delayed fluorescence material is satisfied within the range above, up-conversion from the triplet state to the singlet state of the delayed fluorescence materials may effectively occur, and thus, the light-emitting device 20 may have improved luminescence efficiency.
In embodiments, the delayed fluorescence material may include: a material including at least one electron donor (for example, a TT electron-rich C3-C60 cyclic group and the like, such as a carbazole group) and at least one electron acceptor (for example, a sulfoxide group, a cyano group, a Ir electron-deficient nitrogen-containing C1-C60 cyclic group, and the like); a material including a C8-C60 polycyclic group including at least two cyclic groups condensed to each other while sharing boron (B); or the like.
Examples of a delayed fluorescence material may include at least one of Compounds DF1 to DF9:
In an embodiment, the emission layer 152-1 and 152-2 may each independently include quantum dots.
In the specification, a “quantum dot” may be a crystal of a semiconductor compound, and may include any material capable of emitting light of various emission wavelengths according to a size of the crystal.
A diameter of the quantum dot may be, for example, in a range of about 1 nm to about 10 nm.
The quantum dots may be synthesized by a wet chemical process, a metal organic chemical vapor deposition process, a molecular beam epitaxy process, or any process similar thereto.
The wet chemical process is a method that includes mixing a precursor material with an organic solvent and growing quantum dot particle crystals. When the crystals grow, the organic solvent naturally serves as a dispersant coordinated on the surface of the quantum dot crystals and controls the growth of the crystals so that the growth of quantum dot particles may be controlled through a process which costs less and may be more readily performed than vapor deposition methods, such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).
A quantum dot may include: a Group II-VI semiconductor compound; a Group III-V semiconductor compound; a Group III-VI semiconductor compound; a Group I-III-VI semiconductor compound; a Group IV-VI semiconductor compound; a Group IV element or compound; or any combination thereof.
Examples of a Group II-VI semiconductor compound may include: a binary compound, such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and the like; a ternary compound, such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, and the like; a quaternary compound, such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and the like; or any combination thereof.
Examples of a Group III-V semiconductor compound may include: a binary compound, such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and the like; a ternary compound, such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAS, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, and the like; a quaternary compound, such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and the like; or any combination thereof. In an embodiment, the Group III-V semiconductor compound may further include a Group II element. Examples of a Group III-V semiconductor compound further including a Group II element may include InZnP, InGaZnP, InAlZnP, and the like.
Examples of a Group III-VI semiconductor compound may include: a binary compound, such as GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, InTe, and the like; a ternary compound, such as InGaS3, InGaSe3, and the like; or any combination thereof.
Examples of a Group I-III-VI semiconductor compound may include: a ternary compound, such as AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, AgAlO2, and the like; or any combination thereof.
Examples of a Group IV-VI semiconductor compound may include: a binary compound, such as SnS, SnSe, SnTe, PbS, PbSe, PbTe, and the like; a ternary compound, such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and the like; a quaternary compound, such as SnPbSSe, SnPbSeTe, SnPbSTe, and the like; or any combination thereof.
Examples of a Group IV element or compound may include: a single element material, such as Si, Ge, and the like; a binary compound, such as SiC, SiGe, and the like; or any combination thereof.
Each element included in a multi-element compound, such as a binary compound, a ternary compound, and a quaternary compound, may be present at a uniform concentration or at a non-uniform concentration in a particle.
In embodiments, the quantum dots may have a single structure in which the concentration of each element in the quantum dots is uniform, or the quantum dot may have a core-shell structure. For example, materials included in the core and materials included in the shell may be different from each other.
The shell of the quantum dots may serve as a protective layer that prevents chemical degeneration of the core to maintain semiconductor characteristics, and/or may serve as a charging layer that imparts electrophoretic characteristics to the quantum dots. The shell may be single-layered or multi-layered. The interface between the core and the shell may have a concentration gradient in which the concentration of a material in the shell decreases toward the core.
Examples of a material forming the shell of the quantum dots may include: a metal oxide, a metalloid oxide, or a non-metal oxide, a semiconductor compound: or any combination thereof. Examples of a metal oxide, a metalloid oxide, or a non-metal oxide may include: a binary compound, such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, and the like; a ternary compound, such as MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, and the like; or any combination thereof. Examples of the semiconductor compound, as described herein, may include: a Group II-VI semiconductor compound; a Group III-V semiconductor compound; a Group III-VI semiconductor compound; a Group I-III-VI semiconductor compound; a Group IV-VI semiconductor compound; or any combination thereof. Examples of the semiconductor compound may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof.
A full width at half maximum (FWHM) of an emission wavelength spectrum of the quantum dots may be less than or equal to about 45 nm. For example, a FWHM of an emission wavelength spectrum of the quantum dots may be less than or equal to about 40 nm. For example, a FWHM of an emission wavelength spectrum of the quantum dots may be less than or equal to about 30 nm. Within these ranges, color purity or color reproducibility of the quantum dots may be improved. Light emitted through the quantum dots may be emitted in all directions, such that a wide viewing angle may be improved.
In an embodiment, the quantum dots may be in the form of a spherical nanoparticle, a pyramidal nanoparticle, a multi-arm nanoparticle, a cubic nanoparticle, a nanotube, a nanowire, a nanofiber, a nanoplate, or the like.
By controlling the size of the quantum dot, an energy band gap may be adjusted so that light having various wavelength bands may be obtained from the quantum dot containing emission layer. Accordingly, by using quantum dots of different sizes, a light-emitting device that emits light of various wavelengths may be implemented. In an embodiment, the size of quantum dots may be selected to emit red light, green light, and/or blue light. The size of quantum dots may be configured to emit white light by combining light of various colors.
The electron transport region 160-1 and 160-2 may have a structure consisting of a layer consisting of a single material, a structure consisting of a layer including different materials, or a structure including multiple layers including different materials.
The electron transport region 160-1 and 160-2 may each independently include a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, an electron injection layer, or any combination thereof.
In embodiments, the electron transport region 160-1 and 160-2 may each independently have an electron transport layer/electron injection layer structure, a hole blocking layer/electron transport layer/electron injection layer structure, an electron control layer/electron transport layer/electron injection layer structure, or a buffer layer/electron transport layer/electron injection layer structure, wherein the layers of each structure may be stacked from the emission layer 152-2 or 152-1 in its respective stated order, but the structure of the electron transport region 160-1 and 160-2 is not limited thereto.
In an embodiment, the electron transport region 160-1 and 160-2 (for example, the buffer layer, the hole blocking layer, the electron control layer, or the electron transport layer in the electron transport region 160-1 or 160-2) may each independently include a metal-free compound including at least one TT electron-deficient nitrogen-containing C1-C60 cyclic group.
In an embodiment, the electron transport region 160-1 and 160-2 may each independently include a compound represented by Formula 601:
[Ar601]xe11-[(L601)xe1-R601]xe21. [Formula 601]
In Formula 601,
In an embodiment, in Formula 601, when xe11 is 2 or more, two or more of Ar601 may be linked to each other via a single bond.
In an embodiment, in Formula 601, Ar601 may be a substituted or unsubstituted anthracene group.
In embodiments, the electron transport region 160-1 and 160-2 may each independently include a compound represented by Formula 601-1:
In Formula 601-1,
In an embodiment, in Formulae 601 and 601-1 xe1 and xe611 to xe613 may each independently be 0, 1, or 2.
In an embodiment, the electron transport region 160-1 and 160-2 may each independently include: one of Compounds ET1 to ET45; 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP); 4,7-diphenyl-1,10-phenanthroline (Bphen); Alq3; BAlq; TAZ; NTAZ; or any combination thereof:
A thickness of the electron transport region 160-1 and 160-2 may each independently be in a range of about 100 Å to about 5,000 Å. For example, the thickness of the electron transport region 160-1 and 160-2 may each independently be in a range of about 160 Å to about 4,000 Å. When the electron transport region 160-1 or 160-2 includes a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, or any combination thereof, thicknesses of the buffer layer, the hole blocking layer, or the electron control layer may each independently be in a range of about 20 Å to about 1,000 Å, and a thickness of the electron transport layer may be in a range of about 100 Å to about 1,000 Å. For example, the thickness of the buffer layer, the hole blocking layer, or the electron control layer may each independently be in a range of about 30 Å to about 300 Å. For example, the thickness of the electron transport layer may be in a range of about 150 Å to about 500 Å. When the thicknesses of the buffer layer, the hole blocking layer, the electron control layer, the electron transport layer, and/or the electron transport region 160-1 and 160-2 are within these ranges, satisfactory electron transporting characteristics may be obtained without a substantial increase in driving voltage.
The electron transport region 160-1 and 160-2 (for example, an electron transport layer in the electron transport region 160-1 or 160-2) may further include, in addition to the aforementioned materials, a metal-containing material.
The metal-containing material may include an alkali metal complex, an alkaline earth metal complex, or any combination thereof. A metal ion of an alkali metal complex may be a Li ion, a Na ion, a K ion, a Rb ion, or a Cs ion, and a metal ion of an alkaline earth metal complex may be a Be ion, a Mg ion, a Ca ion, a Sr ion, or a Ba ion. A ligand coordinated with the metal ion of the alkali metal complex or the alkaline earth-metal complex may include a hydroxyquinoline, a hydroxyisoquinoline, a hydroxybenzoquinoline, a hydroxyacridine, a hydroxyphenanthridine, a hydroxyphenyloxazole, a hydroxyphenylthiazole, a hydroxyphenyloxadiazole, a hydroxyphenylthiadiazole, a hydroxyphenylpyridine, a hydroxyphenylbenzimidazole, a hydroxyphenylbenzothiazole, a bipyridine, a phenanthroline, a cyclopentadiene, or any combination thereof.
For example, the metal-containing material may include a Li complex. The Li complex may include, for example, Compound ET-D1 (LiQ) or Compound ET-D2:
The electron transport region 160-1 and 160-2 may each independently include an electron injection layer that facilitates the injection of electrons from the second electrode 190. The electron injection layer may contact (e.g., directly contact) the second electrode 190.
The electron injection layer may have a structure consisting of a layer consisting of a single material, a structure consisting of a layer including different materials, or a structure including multiple layers including different materials.
The electron injection layer may include an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof.
The alkali metal may include Li, Na, K, Rb, Cs, or any combination thereof. The alkaline earth metal may include Mg, Ca, Sr, Ba, or any combination thereof. The rare earth metal may include Sc, Y, Ce, Tb, Yb, Gd, or any combination thereof.
The alkali metal-containing compound, the alkaline earth metal-containing compound, and the rare earth metal-containing compound may be oxides, halides (for example, fluorides, chlorides, bromides, iodides, etc.), or tellurides of the alkali metal, the alkaline earth metal, and the rare earth metal, or any combination thereof.
The alkali metal-containing compound may include: an alkali metal oxide, such as Li2O, Cs2O, K2O, and the like; alkali metal halides, such as LiF, NaF, CsF, KF, LiI, NaI, CsI, KI, and the like; or any combination thereof. The alkaline earth metal-containing compound may include an alkaline earth metal oxide, such as BaO, SrO, CaO, BaxSr1-xO (wherein x is a real number satisfying 0<x<1), BaxCa1-xO (wherein x is a real number satisfying 0<x<1), and the like. The rare earth metal-containing compound may include YbF3, ScF3, SC2O3, Y2O3, Ce2O3, GdF3, TbF3, YbI3, ScI3, TbI3, or any combination thereof. In an embodiment, the rare earth metal-containing compound may include a lanthanide metal telluride. Examples of the lanthanide metal telluride may include LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La2Te3, Ce2Te3, Pr2Te3, Nd2Te3, Pm2Te3, Sm2Te3, Eu2Te3, Gd2Te3, Tb2Te3, Dy2Te3, Ho2Te3, Er2Te3, Tm2Te3, Yb2Te3, Lu2Te3, and the like.
The alkali metal complex, the alkaline earth-metal complex, and the rare earth metal complex may include an alkali metal ion, an alkaline earth metal ion, and a rare earth metal ion and a ligand bonded to the metal ion (for example, hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenyl benzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof).
In an embodiment, the electron injection layer may consist of an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof, as described above. In embodiments, the electron injection layer may further include an organic material (for example, a compound represented by Formula 601).
In an embodiment, the electron injection layer may consist of an alkali metal-containing compound (for example, alkali metal halide); or the electron injection layer may consist of an alkali metal-containing compound (for example, alkali metal halide), and an alkali metal, an alkaline earth metal, a rare earth metal, or any combination thereof. For example, the electron injection layer may be a KI:Yb co-deposited layer, an RbI:Yb co-deposited layer, or the like.
When the electron injection layer further includes an organic material, an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth-metal complex, a rare earth metal complex, or any combination thereof may be uniformly or non-uniformly dispersed in a matrix including the organic material.
A thickness of the electron injection layer may be in a range of about 1 Å to about 100 Å. For example, the thickness of the electron injection layer may be in a range of about 3 Å to about 90 Å. When the thickness of the electron injection layer is within these ranges, satisfactory electron injection characteristics may be obtained without a substantial increase in driving voltage.
The second electrode 190 may be arranged on the aforementioned second electron transport region 160-2. The second electrode 190 may be a cathode, which is an electron injection electrode. The second electrode 190 may include a material having a low-work function, for example, a metal, an alloy, an electrically conductive compound, or any combination thereof.
The second electrode 190 may include lithium (Li), silver (Ag), magnesium (Mg), aluminum (AI), aluminum-lithium (Al—Li), calcium (Ca), magnesium-indium (Mg—In), magnesium-silver (Mg—Ag), ytterbium (Yb), silver-ytterbium (Ag—Yb), ITO, IZO, or any combination thereof. The second electrode 190 may be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode.
The second electrode 190 may have a single-layer structure or a multi-layer structure.
The light-emitting device 20 may include a first capping layer outside the first electrode 110, and/or a second capping layer outside the second electrode 190. For example, the light-emitting device 20 may have a structure in which the first capping layer, the first electrode 110, the organic layer 150, and the second electrode 190 may be stacked in the stated order, a structure in which the first electrode 110, the organic layer 150, the second electrode 190, and the second capping layer may be stacked in the stated order, or a structure in which the first capping layer, the first electrode 110, the organic layer 150, the second electrode 190, and the second capping layer may be stacked in the stated order.
Light generated in the emission layer 152-1 or 152-2 of the organic layer 150 of the light-emitting device 20 may be extracted toward the outside through the first electrode 110, which may be a semi-transmissive electrode or a transmissive electrode, and though the first capping layer. Light generated in the emission layer 152-1 or 152-2 of the organic layer 150 of the light-emitting device 20 may be extracted toward the outside through the second electrode 190, which may be a semi-transmissive electrode or a transmissive electrode, and through the second capping layer.
The first capping layer and the second capping layer may each increase external emission efficiency according to the principle of constructive interference. Accordingly, the light extraction efficiency of the light-emitting device 20 may be increased, and accordingly, the luminescence efficiency of the light-emitting device 20 may be improved.
The first capping layer and the second capping layer may each include a material having a refractive index of greater than or equal to about 1.6 (with respect to a wavelength of about 589 nm).
The first capping layer and the second capping layer may each independently be an organic capping layer including an organic material, an inorganic capping layer including an inorganic material, or an organic-inorganic composite capping layer including an organic material and an inorganic material.
At least one of the first capping layer and the second capping layer may each independently include a carbocyclic compound, a heterocyclic compound, an amine group-containing compound, a porphine derivative, a phthalocyanine derivative, a naphthalocyanine derivative, an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The carbocyclic compound, the heterocyclic compound, and the amine group-containing compound may optionally be substituted with a substituent including O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof.
In an embodiment, at least one of the first capping layer and the second capping layer may each independently include an amine group-containing compound.
In embodiments, at least one of the first capping layer and the second capping layer may each independently include a compound represented by Formula 201, a compound represented by Formula 202, or any combination thereof.
In embodiments, at least one of the first capping layer and the second capping layer may each independently include one of Compounds HT28 to HT33, one of Compounds CP1 to CP6, B—NPB, or any combination thereof:
In
In
The light-emitting device may be included in various electronic apparatuses. For example, the electronic apparatus including the light-emitting device may be a light-emitting apparatus, an authentication apparatus, or the like.
The electronic apparatus (for example, a light-emitting apparatus) may further include a color filter, a color conversion layer, or a color filter and a color conversion layer, in addition to the light-emitting device. The color filter and/or the color conversion layer may be arranged in at least one traveling direction of light emitted from the light-emitting device. In an embodiment, the light emitted from the light-emitting device may be blue light or white light. Details on the light-emitting device may be the same as described herein. In an embodiment, the color conversion layer may include quantum dots. The quantum dots may be, for example, the aforementioned quantum dots.
The electronic apparatus may include a first substrate. The first substrate may include subpixels, the color filter may include color filter areas respectively corresponding to the subpixels, and the color conversion layer may include color conversion areas respectively corresponding to the subpixels.
A pixel-defining layer may be arranged among the subpixels to define each subpixel.
The color filter may further include color filter areas and light-shielding patterns arranged between the color filter areas, and the color conversion layer may further include color conversion areas and light-shielding patterns arranged between the color conversion areas.
The color filter areas (or the color conversion areas) may include a first area emitting first color light, a second area emitting second color light, and/or a third area emitting third color light, wherein the first color light, the second color light, and/or the third color light may have different maximum emission wavelengths from one another. For example, the first color light may be red light, the second color light may be green light, and the third color light may be blue light. For example, the color filter areas (or the color conversion areas) may include quantum dots. For example, the first area may include a red quantum dot, the second area may include a green quantum dot, and the third area may not include a quantum dot. The quantum dots may be the same as described herein. The first area, the second area, and/or the third area may each further include a scatterer.
For example, in the light-emitting device may emitting first-color light, the first area may absorb the first-color light to emit a first-1 color light, the second area may absorb the first-color light to emit a second-1 color light, and the third area may absorb the first light to emit a third-1 color light. Here, the first-1 color light, the second-1 color light, and the third-1 color light may each have different maximum emission wavelengths from one another. For example, the first light may be blue light, the first-1 color light may be red light, the second-1 color light may be green light, and the third-1 color light may be blue light.
The electronic apparatus may further include a thin-film transistor, in addition to the light-emitting device as described above. The thin-film transistor may include a source electrode, a drain electrode, and an active layer, wherein any one of the source electrode and the drain electrode may be electrically connected to any one of the first electrode and the second electrode of the light-emitting device.
The thin-film transistor may further include a gate electrode, a gate insulating film, and the like.
The active layer may include crystalline silicon, amorphous silicon, an organic semiconductor, an oxide semiconductor, and the like.
The electronic apparatus may further include a sealing portion for sealing the light-emitting device. The sealing portion may be arranged between the color filter and/or the color conversion layer and the light-emitting device. The sealing portion allows light from the light-emitting device to be extracted to the outside, and may prevent ambient air and moisture from penetrating into the light-emitting device. The sealing portion may be a sealing substrate including a transparent glass substrate or a plastic substrate. The sealing portion may be a thin-film encapsulation layer including an organic layer and/or an inorganic layer. When the sealing portion is a thin film encapsulation layer, the electronic apparatus may be flexible.
Various functional layers may be further included on the sealing portion, in addition to the color filter and/or the color conversion layer, according to the use of the electronic apparatus. Examples of a functional layers may include a touch screen layer, a polarizing layer, and the like. The touch screen layer may be a pressure-sensitive touch screen layer, a capacitive touch screen layer, or an infrared touch screen layer. The authentication apparatus may be, for example, a biometric authentication apparatus that authenticates an individual by using biometric information of a living body (for example, fingertips, pupils, etc.).
The authentication apparatus may further include, in addition to the light-emitting device as described above, a biometric information collector.
The electronic apparatus may be applied to various displays, light sources, lighting, personal computers (for example, a mobile personal computer), mobile phones, digital cameras, electronic organizers, electronic dictionaries, electronic game machines, medical instruments (for example, electronic thermometers, sphygmomanometers, blood glucose meters, pulse measurement devices, pulse wave measurement devices, electrocardiogram displays, ultrasonic diagnostic devices, or endoscope displays), fish finders, various measuring instruments, meters (for example, meters for a vehicle, an aircraft, and a vessel), projectors, and the like.
The electronic apparatus (for example, a light-emitting apparatus) of
The substrate 100 may be a flexible substrate, a glass substrate, or a metal substrate. A buffer layer 210 may be arranged on the substrate 100. The buffer layer 210 may prevent penetration of impurities through the substrate 100 and may provide a flat surface on the substrate 100.
A TFT may be arranged on the buffer layer 210. The TFT may include an active layer 220, a gate electrode 240, a source electrode 260, and a drain electrode 270.
The active layer 220 may include an inorganic semiconductor, such as silicon or polysilicon, an organic semiconductor, or an oxide semiconductor, and may include a source region, a drain region, and a channel region.
A gate insulating film 230 for insulating the active layer 220 from the gate electrode 240 may be arranged on the active layer 220, and the gate electrode 240 may be arranged on the gate insulating film 230.
An interlayer insulating film 250 may be arranged on the gate electrode 240. The interlayer insulating film 250 may be arranged between the gate electrode 240 and the source electrode 260 to insulate the gate electrode 240 from the source electrode 260 and between the gate electrode 240 and the drain electrode 270 to insulate the gate electrode 240 from the drain electrode 270.
The source electrode 260 and the drain electrode 270 may be arranged on the interlayer insulating film 250. The interlayer insulating film 250 and the gate insulating film 230 may be formed to expose the source region and the drain region of the active layer 220, and the source electrode 260 and the drain electrode 270 may respectively contact the exposed portions of the source region and the drain region of the active layer 220.
The TFT may be electrically connected to a light-emitting device to drive the light-emitting device, and may be covered and protected by a passivation layer 280. The passivation layer 280 may include an inorganic insulating film, an organic insulating film, or any combination thereof. A light-emitting device may be provided on the passivation layer 280. The light-emitting device may include the first electrode 110, the organic layer 150, and the second electrode 190.
The first electrode 110 may be arranged on the passivation layer 280. The passivation layer 280 may be arranged to expose a portion of the drain electrode 270, and may not fully cover the drain electrode 270. The first electrode 110 may be electrically connected to the exposed portion of the drain electrode 270.
A pixel defining layer 290 including an insulating material may be arranged on the first electrode 110. The pixel-defining film 290 may expose a region of the first electrode 110, and an organic layer 150 may be formed in the exposed region of the first electrode 110. The pixel defining layer 290 may be a polyimide-based organic film or a polyacrylic-based organic film. Although not shown in
The second electrode 190 may be arranged on the organic layer 150, and a capping layer 195 may be further included on the second electrode 190. The capping layer 195 may be formed to cover the second electrode 190.
The encapsulation portion 300 may be arranged on the capping layer 195. The encapsulation portion 300 may be arranged on the light-emitting device to protect the light-emitting device from moisture or oxygen. The encapsulation portion 300 may include: an inorganic film including silicon nitride (SiNx), silicon oxide (SiOx), indium tin oxide, indium zinc oxide, or any combination thereof; an organic film including polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, an acrylic resin (for example, polymethyl methacrylate, polyacrylic acid, or the like), an epoxy-based resin (for example, aliphatic glycidyl ether (AGE), or the like), or any combination thereof; or any combination of the inorganic films and the organic films.
The electronic apparatus (for example a light-emitting apparatus) of
In embodiments, the light-emitting device included in the electronic apparatus of
Constituent layers of the hole transport region 140-1 and 140-2, the emission layer 152-1 and 152-2, and constituent layers of the electron transport region 160-1 and 160-2 may each be formed in a region by using various methods such as vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) deposition, ink-jet printing, laser-printing, laser-induced thermal imaging (LITI), or the like.
When the constituent layers of the hole transport region 140-1 and 140-2, the emission layer 152-1 and 152-2, and the constituent layers of the electron transport region 160-1 and 160-2 are formed by vacuum deposition, the deposition conditions may be selected, for example, to include a deposition temperature in a range of about 100° C. to about 500° C., a vacuum degree in a range of about 10-8 torr to about 10-3 torr, and a deposition speed in a range of about 0.01 Å/sec to about 100 Å/sec, according to the material and structure of a layer to be formed.
The term “C3-C60 carbocyclic group” as used herein may be a cyclic group consisting of carbon atoms as the only ring-forming atom and having three to sixty carbon atoms, and the term “C1-C60 heterocyclic group” as used herein may be a cyclic group that has one to sixty carbon atoms and further has, in addition to a carbon atom, at least one heteroatom as a ring-forming atom. The C3-C60 carbocyclic group and the C1-C60 heterocyclic group may each be a monocyclic group consisting of one ring or a polycyclic group in which two or more rings are condensed with each other. For example, the number of ring-forming atoms of a C1-C60 heterocyclic group may be from 3 to 61.
The term “cyclic group” as used herein may be a C3-C60 carbocyclic group or a C1-C60 heterocyclic group.
The term “π electron-rich C3-C60 cyclic group” as used herein may be a cyclic group that has three to sixty carbon atoms and may not include *—N═*′ as a ring-forming moiety, and the term “TT electron-deficient nitrogen-containing C1-C60 cyclic group” as used herein may be a heterocyclic group that has one to sixty carbon atoms and may include *—N═*′ as a ring-forming moiety.
In embodiments,
The T2 group may be a furan group, a thiophene group, a 1H-pyrrole group, a silole group, a borole group, a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazole group, a triazole group, a tetrazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, an azasilole group, an azaborole group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, a tetrazine group, a pyrrolidine group, an imidazolidine group, a dihydropyrrole group, a piperidine group, a tetrahydropyridine group, a dihydropyridine group, a hexahydropyrimidine group, a tetrahydropyrimidine group, a dihydropyrimidine group, a piperazine group, a tetrahydropyrazine group, a dihydropyrazine group, a tetrahydropyridazine group, or a dihydropyridazine group.
The T3 group may be a furan group, a thiophene group, a 1H-pyrrole group, a silole group, or a borole group.
The T4 group may be a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazole group, a triazole group, a tetrazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, an azasilole group, an azaborole group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, or a tetrazine group.
The terms “cyclic group”, “C3-C60 carbocyclic group”, “C1-C60 heterocyclic group”, “TT electron-rich C3-C60 cyclic group”, or “TT electron-deficient nitrogen-containing C1-C60 cyclic group” as used herein may each be a group condensed to any cyclic group, a monovalent group, or a polyvalent group (for example, a divalent group, a trivalent group, a tetravalent group, etc.) according to the structure of a formula for which the corresponding term is used. In an embodiment, a “benzene group” may be a benzo group, a phenyl group, a phenylene group, or the like, which may be readily understood by one of ordinary skill in the art according to the structure of a formula including the “benzene group.”
Examples of a monovalent C3-C60 carbocyclic group or a monovalent C1-C60 heterocyclic group may include a C5-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group. Examples of a divalent C3-C60 carbocyclic group or a divalent C1-C60 heterocyclic group may include a C3-C10 cycloalkylene group, a C1-C10 heterocycloalkylene group, a C3-C10 cycloalkenylene group, a C1-C10 heterocycloalkenylene group, a C6-C60 arylene group, a C1-C60 heteroarylene group, a divalent non-aromatic condensed polycyclic group, and a divalent non-aromatic condensed heteropolycyclic group.
The term “C1-C60 alkyl group” as used herein may be a linear or branched aliphatic hydrocarbon monovalent group that has one to sixty carbon atoms, and examples thereof may include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, an isobutyl group, a tert-butyl group, an n-pentyl group, a tert-pentyl group, a neopentyl group, an isopentyl group, a sec-pentyl group, a 3-pentyl group, a sec-isopentyl group, an n-hexyl group, an isohexyl group, a sec-hexyl group, a tert-hexyl group, an n-heptyl group, an isoheptyl group, a sec-heptyl group, a tert-heptyl group, an n-octyl group, an isooctyl group, a sec-octyl group, a tert-octyl group, an n-nonyl group, an isononyl group, a sec-nonyl group, a tert-nonyl group, an n-decyl group, an isodecyl group, a sec-decyl group, and a tert-decyl group. The term “C1-C60 alkylene group” as used herein may be a divalent group having a same structure as the C1-C60 alkyl group.
The term “C2-C60 alkenyl group” as used herein may be a monovalent hydrocarbon group having at least one carbon-carbon double bond in the middle or at a terminus of the C2-C60 alkyl group, and examples thereof may include an ethenyl group, a propenyl group, a butenyl group, and the like. The term “C2-C60 alkenylene group” as used herein may be a divalent group having a same structure as the C2-C60 alkenyl group.
The term “C2-C60 alkynyl group” as used herein may be a monovalent hydrocarbon group having at least one carbon-carbon triple bond in the middle or at a terminus of the C2-C60 alkyl group, and examples thereof may include an ethynyl group, a propynyl group, and the like. The term “C2-C60 alkynylene group” as used herein may be a divalent group having a same structure as the C2-C60 alkynyl group.
The term “C1-C60 alkoxy group” as used herein may be a monovalent group represented by —O(A101) (wherein A101 may be a C1-C60 alkyl group), and examples thereof may include a methoxy group, an ethoxy group, an isopropyloxy group, and the like.
The term “C3-C10 cycloalkyl group” as used herein may be a monovalent saturated hydrocarbon cyclic group having 3 to 10 carbon atoms, and examples thereof may include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, an adamantanyl group, a norbornanyl group (or bicyclo[2.2.1]heptyl group), a bicyclo[1.1.1]pentyl group, a bicyclo[2.1.1]hexyl group, a bicyclo[2.2.2]octyl group, and the like. The term “C3-C10 cycloalkylene group” as used herein may be a divalent group having a same structure as the C3-C10 cycloalkyl group.
The term “C1-C10 heterocycloalkyl group” as used herein may be a monovalent cyclic group of 1 to 10 carbon atoms, further including, in addition to carbon atoms, at least one heteroatom, as ring-forming atoms, and examples thereof may include a 1,2,3,4-oxatriazolidinyl group, a tetrahydrofuranyl group, a tetrahydrothiophenyl group, and the like. The term “C1-C10 heterocycloalkylene group” as used herein may be a divalent group having a same structure as the C1-C10 heterocycloalkyl group.
The term “C3-C10 cycloalkenyl group” as used herein may be a monovalent cyclic group that has three to ten carbon atoms and at least one carbon-carbon double bond in the ring thereof and no aromaticity, and examples thereof may include a cyclopentenyl group, a cyclohexenyl group, a cycloheptenyl group, and the like. The term “C3-C10 cycloalkenylene group” as used herein may be a divalent group having a same structure as the C3-C10 cycloalkenyl group.
The term “C1-C10 heterocycloalkenyl group” as used herein may be a monovalent cyclic group of 1 to 10 carbon atoms, further including, in addition to carbon atoms, at least one heteroatom, as ring-forming atoms, and having at least one carbon-carbon double bond in the cyclic structure thereof. Examples of a C1-C10 heterocycloalkenyl group may include a 4,5-dihydro-1,2,3,4-oxatriazolyl group, a 2,3-dihydrofuranyl group, a 2,3-dihydrothiophenyl group, and the like. The term “C1-C10 heterocycloalkenylene group” as used herein may be a divalent group having a same structure as the C1-C10 heterocycloalkenyl group.
The term “C6-C60 aryl group” as used herein may be a monovalent group having a carbocyclic aromatic system of 6 to 60 carbon atoms, and the term “C6-C60 arylene group” as used herein may be a divalent group having a carbocyclic aromatic system of 6 to 60 carbon atoms. Examples of a C6-C60 aryl group may include a phenyl group, a pentalenyl group, a naphthyl group, an azulenyl group, an indacenyl group, an acenaphthyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a heptalenyl group, a naphthacenyl group, a picenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, an ovalenyl group, and the like. When the C6-C60 aryl group and the C6-C60 arylene group each include two or more rings, the respective rings may be condensed with each other.
The term “C1-C60 heteroaryl group” as used herein may be a monovalent group having a heterocyclic aromatic system of 1 to 60 carbon atoms, further including, in addition to carbon atoms, at least one heteroatom, as ring-forming atoms. The term “C1-C60 heteroarylene group” as used herein may be a divalent group having a heterocyclic aromatic system of 1 to 60 carbon atoms, further including, in addition to carbon atoms, at least one heteroatom, as ring-forming atoms. Examples of a C1-C60 heteroaryl group may include a pyridinyl group, a pyrimidinyl group, a pyrazinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, a benzoquinolinyl group, an isoquinolinyl group, a benzoisoquinolinyl group, a quinoxalinyl group, a benzoquinoxalinyl group, a quinazolinyl group, a benzoquinazolinyl group, a cinnolinyl group, a phenanthrolinyl group, a phthalazinyl group, and a naphthyridinyl group. When the C1-C60 heteroaryl group and the C1-C60 heteroarylene group each include two or more rings, the respective rings may be condensed with each other.
The term “monovalent non-aromatic condensed polycyclic group” as used herein may be a monovalent group (for example, having 8 to 60 carbon atoms) having two or more rings condensed to each other, only carbon atoms as ring-forming atoms, and no aromaticity in its entire molecular structure. Examples of a monovalent non-aromatic condensed polycyclic group may include an indenyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, an indenophenanthrenyl group, an indeno anthracenyl group, and the like. The term “divalent non-aromatic condensed polycyclic group” as used herein may be a divalent group having a same structure as the monovalent non-aromatic condensed polycyclic group described above.
The term “monovalent non-aromatic condensed heteropolycyclic group” as used herein may be a monovalent group (for example, having 1 to 60 carbon atoms) having two or more rings condensed to each other, further including, in addition to carbon atoms, at least one heteroatom, as ring-forming atoms, and having non-aromaticity in its entire molecular structure. Examples of a monovalent non-aromatic condensed heteropolycyclic group may include a pyrrolyl group, a thiophenyl group, a furanyl group, an indolyl group, a benzoindolyl group, a naphthoindolyl group, an isoindolyl group, a benzoisoindolyl group, a naphthoisoindolyl group, a benzosilolyl group, a benzothiophenyl group, a benzofuranyl group, a carbazolyl group, a dibenzosilolyl group, a dibenzothiophenyl group, a dibenzofuranyl group, an azacarbazolyl group, an azafluorenyl group, an azadibenzosilolyl group, an azadibenzothiophenyl group, an azadibenzofuranyl group, a pyrazolyl group, an imidazolyl group, a triazolyl group, a tetrazolyl group, an oxazolyl group, an isoxazolyl group, a thiazolyl group, an isothiazolyl group, an oxadiazolyl group, a thiadiazolyl group, a benzopyrazolyl group, a benzimidazolyl group, a benzoxazolyl group, a benzothiazolyl group, a benzoxadiazolyl group, a benzothiadiazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, an imidazotriazinyl group, an imidazopyrazinyl group, an imidazopyridazinyl group, an indeno carbazolyl group, an indolocarbazolyl group, a benzofurocarbazolyl group, a benzothienocarbazolyl group, a benzosilolocarbazolyl group, a benzoindolocarbazolyl group, a benzocarbazolyl group, a benzonaphthofuranyl group, a benzonaphthothiophenyl group, a benzonaphthosilolyl group, a benzofurodibenzofuranyl a group, benzofurodibenzothiophenyl group, and a benzothienodibenzothiophenyl group. The term “divalent non-aromatic condensed heteropolycyclic group” as used herein may be a divalent group having a same structure as the monovalent non-aromatic condensed heteropolycyclic group described above.
The term “C6-C60 aryloxy group” as used herein may be a group represented by —O(A102) (wherein A102 may be a C6-C60 aryl group), and the term “C6-C60 arylthio group” as used herein may be a group represented by —S(A103) (wherein A103 may be a C6-C60 aryl group).
The term “C7-C60 arylalkyl group” as used herein refers to -(A104)(A105) (wherein A104 may be a C1-C54 alkylene group, and A105 may be a C6-C59 aryl group), and the term “C2-C60 heteroarylalkyl group” as used herein may be -(A106)(A107) (wherein A106 may be a C1-C59 alkylene group, and A107 may be a C1-C59 heteroaryl group).
In the specification, the group term “R10a” may be:
In the specification, Q1 to Q3, Q11 to Q13, Q21 to Q23, and Q31 to Q33 may each independently be: hydrogen; deuterium; —F; —Cl; —Br; —I; a hydroxyl group; a cyano group; a nitro group; a C1-C60 alkyl group; a C2-C60 alkenyl group; a C2-C60 alkynyl group; a C1-C60 alkoxy group; a C3-C60 carbocyclic group, a C1-C60 heterocyclic group, a C7-C60 arylalkyl group, or a C2-C60 heteroarylalkyl group, each unsubstituted or substituted with deuterium, —F, a cyano group, a C1-C60 alkyl group, a C1-C60 alkoxy group, a phenyl group, a biphenyl group, or any combination thereof.
The term “heteroatom” as used herein may be any atom other than a carbon atom or a hydrogen atom. Examples of the heteroatom may include O, S, N, P, Si, B, Ge, Se, and any combination thereof.
The term “third-row transition metal” as used herein may include Hf, Ta, W, Re, Os, Ir, Pt, Au, and the like.
In the specification, the term “Ph” refers to a phenyl group, the term “Me” refers to a methyl group, the term “Et” refers to an ethyl group, the terms “tert-Bu” or “But” each refer to a tert-butyl group, and the term “OMe” refers to a methoxy group.
The term “biphenyl group” as used herein may be a “phenyl group substituted with a phenyl group.” For example, the “biphenyl group” may be a substituted phenyl group having a C6-C60 aryl group as a substituent.
The term “terphenyl group” as used herein may be a “phenyl group substituted with a biphenyl group.” For example, the “terphenyl group” may be a substituted phenyl group having, as a substituent, a C6-C60 aryl group substituted with a C6-C60 aryl group.
The symbols * and *′ as used herein, unless defined otherwise, each refer to a binding site to a neighboring atom in a corresponding formula or moiety.
Hereinafter, compounds according to embodiments and light-emitting devices according to embodiments will be described in detail with reference to the following Synthesis Examples and Examples. The wording “B was used instead of A” used in describing Synthesis Examples means that an identical molar equivalent of B was used in place of A.
A 15 Ω/cm2 ITO/Ag/ITO (120 Å/500 Å/120 Å) glass substrate (by Corning Company) was cut into a size of 50 mm×50 mm×0.7 mm, ultrasonicated with isopropyl alcohol and pure water for 5 minutes each, cleaned by UV irradiation and ozone exposure for 15 minutes, and installed in a vacuum evaporation apparatus.
HT3 and F4-TCNQ were co-deposited at a weight ratio of 98:2 on the glass substrate (including the ITO/Ag/ITO anode) to form a first hole injection layer having a thickness of 100 Å, and HT3 was deposited on the first hole injection layer to form a first hole transport layer having a thickness of 200 Å.
In a red subpixel, RH as a red host and PD9 (Ir(piq)2(acac)) as a red dopant were co-deposited at a weight ratio of 97:3 on the first hole transport layer to form a first red emission layer having a thickness of 450 Å. In a green subpixel, GH as a green host and PD13 (Ir(ppy)3) as a green dopant were co-deposited at a weight ratio of 92:8 on the first hole transport layer to form a first green emission layer having a thickness of 350 Å. In a red subpixel, a green subpixel, and a blue subpixel, BH as a blue host and FD5 as a blue dopant were co-deposited at a weight ratio of 99:1 commonly over the first red emission layer and the first green emission layer to form a first blue emission layer having a thickness of 200 Å. As a result, a first emission layer including the first red emission layer, the first green emission layer, and the first blue emission layer was formed.
ET29 was deposited on the first blue emission layer to form a first electron transport layer having a thickness of 150 Å, thereby forming a first emitting unit including the first hole injection layer, the first hole transport layer, the first emission layer, and the first electron transport layer.
As an n-type charge generation layer, ET36 and Yb (wherein an amount of Yb was 1 wt %) were co-deposited on the first electron transport layer to a thickness of 100 Å, and as a p-type charge generation layer, HT3 and F4-TCNQ were co-deposited at a weight ratio of 95:5, thereby forming a first charge generation layer having a thickness of 100 Å.
HT3 was deposited on the first charge generation layer to form a second hole transport layer having a thickness of 300 Å.
In a red subpixel, HT18 was deposited on the second hole transport layer to a thickness of 400 Å, and in a green subpixel, HT45 was deposited on the second hole transport layer to a thickness of 100 Å, thereby forming a hole auxiliary layer.
In a red subpixel, RH as a red host and PD9 (Ir(piq)2(acac)) as a red dopant were co-deposited at a weight ratio of 97:3 on the hole auxiliary layer to form a second red emission layer having a thickness of 450 Å. In a green subpixel, GH as a green host and PD13 (Ir(ppy)3) as a green dopant were co-deposited at a weight ratio of 92:8 on the hole auxiliary layer to form a second green emission layer having a thickness of 350 Å. In a red subpixel, a green subpixel, and a blue subpixel, BH as a blue host and FD5 as a blue dopant were co-deposited at a weight ratio of 99:1 commonly over the second red emission layer and the second green emission layer to form a second blue emission layer having a thickness of 200 Å. As a result, a second emission layer including the second red emission layer, the second green emission layer, and the second blue emission layer was formed.
ET37 was deposited on commonly over the second emission layer to form a second buffer layer having a thickness of 50 Å, and ET29 and Liq were co-deposited at a ratio of 1:1 to form a second electron transport layer having a thickness of 150 Å, thereby forming a second emitting unit including the second hole transport layer, the hole auxiliary layer, the second emission layer, the second buffer layer, and the second electron transport layer.
Ag:Mg were deposited on the second electron transport layer to form a cathode having a thickness of 120 Å, and HT28 was deposited on the cathode to form a capping layer having a thickness of 700 Å, thereby completing the manufacture of a light-emitting device.
A light-emitting device was manufactured in the same manner as in Example 1, except that a first blue emission layer was formed on a first hole transport layer in a blue subpixel instead of being formed commonly over a first red emission layer and a first green emission layer in a red subpixel, a green subpixel, and a blue subpixel.
A light-emitting device was manufactured in the same manner as in Example 1, except that a first blue emission layer was formed on a first hole transport layer in a blue subpixel instead of being formed commonly over a first red emission layer and a first green emission layer in a red subpixel, a green subpixel, and a blue subpixel, a second blue emission layer was formed on a second hole transport layer in a blue subpixel instead of being formed on a hole auxiliary layer in a red subpixel, a green subpixel, and a blue subpixel, and a thickness of a second electron transport layer was changed to 300 Å.
A light-emitting device was manufactured in the same manner as in Example 1, except that CBP was used as a red host instead of RH and CBP was used as a green host instead of GH in forming a first emission layer and a second emission layer.
A 15 Ω/cm2 ITO/Ag/ITO (120 Å/500 Å/120 Å) glass substrate (by Corning Company) was cut into a size of 50 mm×50 mm×0.7 mm, ultrasonicated with isopropyl alcohol and pure water for 5 minutes each, cleaned by UV irradiation and ozone exposure for 15 minutes, and installed in a vacuum evaporation apparatus.
HT3 and F4-TCNQ were co-deposited at a weight ratio of 98:2 on the glass substrate (i.e., an ITO/Ag/ITO anode) to form a hole injection layer having a thickness of 100 Å, and HT3 was deposited on the first hole injection layer to form a hole transport layer having a thickness of 1,200 Å.
In a red subpixel, HT18 was deposited on the hole transport layer to a thickness of 700 Å, and HT45 was deposited on the hole transport layer to a thickness of 200 Å, thereby forming a hole auxiliary layer.
In a red subpixel, RH as a red host and PD9 (Ir(piq)2(acac)) as a red dopant were co-deposited at a weight ratio of 97:3 on the hole auxiliary layer to form a red emission layer having a thickness of 450 Å. In a green subpixel, GH as a green host and PD13 (Ir(ppy)3) as a green dopant were co-deposited at a weight ratio of 92:8 on the hole auxiliary layer to form a green emission layer having a thickness of 350 Å. In a red subpixel, a green subpixel, and a blue subpixel, BH as a blue host and FD5 as a blue dopant were co-deposited at a weight ratio of 99:1 commonly over the red emission layer and the green emission layer to form a blue emission layer having a thickness of 200 Å. As a result, an emission layer including the red emission layer, the green emission layer, and the blue emission layer was formed.
ET37 was deposited on the emission layer to form a buffer layer having a thickness of 50 Å, and ET29 and Liq were co-deposited at a ratio of 1:1 to form an electron transport layer having a thickness of 150 Å.
Ag:Mg was deposited on the electron transport layer to form a cathode having a thickness of 120 Å, and HT28 was deposited on the cathode to form a capping layer having a thickness of 700 Å, thereby completing the manufacture of a light-emitting device.
For the light-emitting devices of Examples 1 and 2 and Comparative Examples 1 to 3, a LUMO energy (LUMORH) level of the red host, a LUMO energy (LUMOGH) level of the green host, a LUMO energy (LUMOBH) level of the blue host in each of the light-emitting devices were measured, and the results are shown in Table 1.
By using a color luminance meter, Keithley source meter apparatus, a current-fixed room temperature lifespan apparatus, the driving voltage (V) and efficiency (Cd/A) at a luminance of 1,500 nit were measured, and the results are shown in Table 1. The efficiency was evaluated based on the efficiency of Comparative Example 2 as 100%, and the characteristics of each device were evaluated therefrom.
Referring to Table 1, the light-emitting device of Example 1 satisfied Condition i in which the LUMORH level of the red host was smaller than the LUMOBH level of the blue host, and Condition ii in which the LUMOGH level of the green host was smaller than the LUMOBH level of the blue host. In this regard, it was confirmed that the light-emitting device of Example 1 had excellent efficiency compared to the light-emitting device of Comparative Example 2 which did not satisfy Condition i and/or Condition ii.
Referring to Table 1, it was confirmed that the light-emitting device of Comparative Example 3 consisting of a single stack exhibited significantly inferior efficiency characteristics to the tandem light-emitting devices of Examples 1 and 2. Referring to Table 1, the light-emitting apparatus of Comparative Example 1 had the same device characteristics as the light-emitting apparatus of Example 2. However, although different from Comparative Example 1, in the case of the light-emitting apparatus of Example 2, the manufacturing process was simplified by applying a blue common emission layer without applying a fine metal mask (FMM), thereby improving the processability compared to the light-emitting apparatus of Comparative Example 1 in which a blue common emission layer was not used.
According to the embodiments, a light-emitting device may have high efficiency and a long lifespan, and thus may be used to manufacture a high-quality electronic apparatus with excellent light efficiency and a long lifespan.
Embodiments have been disclosed herein, and although terms are employed, they are used and are to be interpreted in a generic and descriptive sense only and not for purposes of limitation. In some instances, as would be apparent by one of ordinary skill in the art, features, characteristics, and/or elements described in connection with an embodiment may be used singly or in combination with features, characteristics, and/or elements described in connection with other embodiments unless otherwise specifically indicated. Accordingly, it will be understood by those of ordinary skill in the art that various changes in form and details may be made without departing from the spirit and scope of the disclosure.
| Number | Date | Country | Kind |
|---|---|---|---|
| 10-2023-0123318 | Sep 2023 | KR | national |
