Patent Application
20100213437
This application is based upon and claims the benefit of priority under Article 4 of the Paris Convention from the prior Japanese Patent Applications No. 256371/2007, filed on Sep. 28, 2007, the entire contents of the specifications, drawings, etc. of which are incorporated herein by reference.
The present invention relates to a light emitting device and more specifically relates to a light emitting device comprising an EL luminescent layer containing quantum dots.
An organic electroluminescence device (hereinafter referred to also as organic EL device) is a light emitting device having a laminate structure comprising an organic luminescent layer held between an anode and a cathode and is a self-luminous device utilizing luminescence attributable to recombination, within the luminescent layer, between holes injected from the anode and electrons injected from the cathode. The task of the organic EL device is to realize the prolongation of the service life and improvement in luminescence efficiency of the luminescent material constituting the organic luminescent layer, and studies are currently energetically made to attain the task.
On the other hand, a light emitting device has been proposed that utilizes, as an EL luminescent material, a semiconductor fine particles (called “quantum dots”) that can regulate luminescent color by varying the particle diameter (see, for example, document: Seth Coe et. al., Nature, 420, 800-803 (2002)). The document describes a typical example of quantum dots having a core-shell structure comprising a core of CdSe, a shell of ZnS provided on the outer periphery of the core, and a capping compound provided on the outer periphery of the shell. The light emitting device using the quantum dots as a luminescent material is advantageous in that the width of a luminescence spectrum is smaller than that in a light emitting device using the organic EL material and, thus, the color purity can be enhanced.
As shown in
Japanese Translation of PCT Publication No. 502176/2005 and Japanese Translation of PCT Publication No. 513478/2007 propose an example of a light emitting device comprising a luminescent layer that comprises quantum dots dispersed in a host material to enhance the probability of recombination of charges within the luminescent layer. The claimed advantage of this light emitting device is that the produced excitons migrate within the luminescent layer to cause EL luminescence of the quantum dots.
The present invention has been made with a view to solving the problem of non-patent document 1 that satisfactory brightness and luminescence efficiency cannot be realized, and an object of the present invention is to provide a light emitting device that comprises a luminescent layer using quantum dots as an EL luminescent material and has enhanced brightness and luminescence efficiency.
The above object can be attained by a light emitting device comprising at least an anode, a hole transport luminescent layer formed of a material containing a hole transport material and quantum dots, an electron transport layer, and a cathode provided in that order, characterized in that the hole mobility of the electron transport layer is smaller than that of tris(8-quinolinolato)aluminum complex (Alq3), and in the hole transport luminescent layer, excitons generated in the electron transport layer migrate into the luminescent layer to emit light.
According to the present invention, since the hole mobility of the electron transport layer is smaller than that of tris(8-quinolinolato)aluminum complex (Alq3), a part of holes injected from the anode into the hole transport luminescent layer is recombined with electrons within the hole transport luminescent layer while the other holes are passed through the hole transport luminescent layer and are recombined with electrons within the electron transport layer at its portion close to the hole transport luminescent layer. As a result, excitons produced by recombination within the electron transport layer easily migrate into the hole transport luminescent layer and are consumed in EL luminescence of quantum dots, and, thus, a recombination area which substantially contributes to the luminescence of quantum dots is increased, leading to an enhanced luminescence efficiency.
In a preferred embodiment of the light emitting device according to the present invention, the light emitting device is constructed to meet [Ip(ETL)]<[Ip(HTL)+1.0 eV] wherein Ip(ETL) represents the absolute value of the ionization potential of an electron transport material that forms the electron transport layer; and Ip(HTL) represents the absolute value of the ionization potential of the hole transport material.
In a preferred embodiment of the light emitting device according to the present invention, the electron transport layer has a hole mobility of not more than 10−7 cm2/V/sec.
In a preferred embodiment of the light emitting device according to the present invention, the hole mobility is measured by providing a test piece formed of ITO (150 nm)/PEDOT (20 nm)/αNPD (20 nm)/measuring object (100 nm)/Au (100 nm), applying 10 V to the test piece, and, in this state, measuring a current value in a hole-only device.
In a preferred embodiment of the light emitting device according to the present invention, the electron transport layer has a thickness of not less than 30 nm and not more than 150 nm.
In a preferred embodiment of the light emitting device according to the present invention, the electron transport layer comprises BAlq2 as an electron transport material.
In a preferred embodiment of the light emitting device according to the present invention, a dopant that enhances a recombination probability at sites on the hole transport luminescent layer side is contained at least at sites on the hole transport luminescent layer side of the electron transport layer.
In a preferred embodiment of the light emitting device according to the present invention, the hole transport luminescent layer is any one of a layer comprising the hole transport material and the quantum dots dispersed in each other, a layer comprising a hole transport layer formed by phase separation between the hole transport material and the quantum dots and a monomolecular film of quantum dots, and a layer in a state intermediate between the layers.
According to the light emitting device of the present invention, a part of holes injected from the anode into the hole transport luminescent layer is recombined with electrons within the hole transport luminescent layer, and other holes which could not have contributed to the recombination are passed through the hole transport luminescent layer and are recombined with electrons within the electron transport layer at its portion close to the hole transport luminescent layer. Thus, all the holes contribute to luminescence of the quantum dots. As a result, excitons produced by recombination within the electron transport layer easily migrate into the hole transport luminescent layer and are consumed in EL luminescence of quantum dots, and, thus, a recombination area which substantially contributes to the luminescence of quantum dots is increased, leading to an enhanced luminescence efficiency.
Embodiments of the light emitting device according to the present invention will be described. The present invention, however, is not to be construed as being limited to the following embodiments and the accompanying drawings.
The “hole transport luminescent layer 5” referred to herein is defined as including a single layer 5A, as shown in
Next, the constituent elements of the light emitting device according to the present invention will be described in more detail. The present invention, however, is not to be construed to the following embodiments only. In the following description, when the expression “upper” and “lower” are used, the upper side and the lower side in a planar view of
(Base Material)
In the embodiment shown in
(Electrode)
The anode 3 and the cathode 4 are electrodes that inject holes and electrodes for emitting light from the quantum dots which are an EL luminescent material. In general, as shown in
A thin film formed of, for example, a metal, an electroconductive oxide, or an electroconductive polymer is used as the anode 3. Specific examples thereof include transparent electroconductive films such as ITO (indium tin oxide), indium oxide, IZO (indium zinc oxide), SnO2, and ZnO, large-work function metals having good hole injectability such as gold and chromium, and electroconductive polymers such as polyaniline, polyacetylene, polyalkylthiophene derivatives, and polysilane derivatives. The anode 3 can be formed by vacuum processes such as vacuum deposition, sputtering, and CVD or coating. The thickness of the anode 3 may vary depending, for example, upon the material used, but is preferably, for example, approximately 10 nm to 1000 nm.
A thin film formed of, for example, a metal, an electroconductive oxide, an electroconductive polymer is used as the cathode 4. Specific examples thereof include small-work function metals having good electron injectability, for example, single metals such as aluminum and silver, magnesium alloys such as MgAg, aluminum alloys such as AlLi, AlCa, and AlMg, alkali metals including Li and Ca, and alloys of the alkali metals. As with the anode 3, the cathode 4 can be formed by vacuum processes such as vacuum deposition, sputtering, and CVD or coating. The thickness of the cathode 4 may vary depending, for example, upon the material used, but is preferably, for example, approximately 10 nm to 1000 nm.
(Luminescent Layer)
The luminescent layer 5 is held between the anode 3 and the cathode 4. Holes injected from the anode 3 are recombined with electrons injected from the cathode 4, and excitons generated by the recombination cause emission of light from quantum dots 11 which are an EL material constituting the luminescent layer 5. As described above, the luminescent layer 5 may be any of a single layer 5A, as shown in
The quantum dots 11 constituting the luminescent layer 5 are semiconductor fine particles that can regulate luminescent color by varying the particle diameter. The quantum dots 11 are called nanoparticles and nanocrystals, and a typical example thereof comprises a core of CdSe, a ZnS shell provided on the outer periphery of the core, and a capping compound provided on the outer periphery of the shell. When the particle diameter of the quantum dots 11 is varied, light having a different color is emitted. For example, when the quantum dots consist of a core of CdSe only, the peak wavelengths of fluorescence spectra for particle diameters of 2.3 nm, 3.0 nm, 3.8 nm, and 4.6 nm are 528 nm, 570 nm, 592 nm, and 637 nm, respectively.
The quantum dots 11 are not particularly limited as long as they are semiconductor fine particles (semiconductor nanocrystals) of nanometer size and are a luminescent material that exhibits a quantum confinement effect (quantum size effect). Specific examples of such luminescent materials include group II-VI semiconductor compounds such as MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe, BaTe, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, and HgTe, group III-V semiconductor compounds such as AlN, AlP, AlAs, AlSb, GaAs, GaP, GaN, GaSb, InN, InAs, InP, InSb, TiN, TiP, TiAs, and TiSb, semiconductor crystals containing group IV semiconductors such as Si, Ge, and Pb, and, further, semiconductor compounds containing three or more elements such as InGaP. Alternatively, semiconductor crystals comprising the semiconductor compound doped with a cation of a rare earth metal or a cation of a transition metal, for example, Eu3+, Tb3+, Ag+, or Cu+, may also be used.
Among others, semiconductor crystals such as CdS, CdSe, CdTe, or InGaP are suitable from the viewpoints of easiness of preparation, the controllability of the particle diameter which provides luminescence in a visible range, and fluorescence quantum yield.
The quantum dots 11 may be formed of one semiconductor compound or two or more semiconductor compounds. For example, the quantum dots 11 may have a core-shell structure comprising a core formed of a semiconductor compound and a shell formed of a semiconductor compound different from the compound constituting the core. The luminescence efficiency of the core-shell-type quantum dots can be enhanced by using, as a semiconductor compound constituting the shell, a material that has a higher band gap than the semiconductor compound constituting the core so that excitons are confined in the core. Examples of the core-shell structure (core/shell) having a magnitude relation in the band gap between the core and the shell include CdSe/ZnS, CdSe/ZnSe, CdSe/CdS, CdTe/CdS, InP/ZnS, GaP/ZnS, Si/ZnS, InN/GaN, InP/CdSSe, InP/ZnSeTe, GaInP/ZnSe, GaInP/ZnS, Si/AlP, InP/ZnSTe, GaInP/ZnSTe, and GaInP/ZnSSe.
The size of the quantum dots 11 may be properly regulated depending upon the material for constituting the quantum dots to obtain light having a desired wavelength. The energy band gap of the quantum dots increases with reducing the particle diameter of the quantum dots. That is, as the crystal size decreases, the luminescence of the quantum dots shifts toward blue, that is, higher energy. Accordingly, the luminescence wavelength can be regulated over wavelength ranges of an ultraviolet range spectrum, a visible range spectrum, and an infrared range spectrum by varying the size of quantum dots.
In general, the particle diameter of the quantum dots 11 is preferably in the range of 0.5 to 20 nm, particularly preferably in the range of 1 to 10 nm. When the size distribution of the quantum dots is narrower, a luminescent color having higher sharpness can be provided.
The shape of the quantum dots 11 is not particularly limited, and the quantum dots 11 may be in a spherical, rod, disk, or other form. When the quantum dots are not spherical, the particle diameter of the quantum dots may be assumed to be the particle diameter of spheres having the same volume as the non-spherical quantum dots.
Information about the particle diameter, shape, dispersed state and the like of the quantum dots 11 can be obtained with a transmission electron microscope (TEM). Further, the crystal structure and particle diameter of the quantum dots can be learned from X-ray crystal diffraction (XRD). Furthermore, the particle diameter of the quantum dots and information about the surface of the quantum dots can also be obtained by a UV-Vis absorption spectrum.
A quantum dot having a CdSe/ZnS-type core-shall structure basically comprising a core of CdSe, a ZnS shell provided on the outer periphery of the core, and a capping compound provided on the outer periphery of the ZnS shell may be mentioned as a preferred example of the quantum dots 11. When the core-shell structure comprises a core formed of a semiconductor compound and a shell of a semiconductor compound that is different from the compound constituting the core and has a higher band gap than the semiconductor compound constituting the core, excitons are confined in the core. The capping compound functions as a dispersing agent. Specific examples of such capping compounds include, for example, TOPO (tri-n-octylphosphine oxide), TOP (trioctylphosphine), and TBP (tributylphosphine). The above material can realize the dispersion of the quantum dots in an organic solvent.
When the luminescent layer 5 is a single layer 5A shown in
The luminescent layer 5 can be formed by any method without particular limitation. For example, the single layer 5A shown in
For example, when the luminescent layer 5 is a single layer 5A, shown in
(Hole Transport Material and Hole Transport Layer)
The hole transport material that constitutes the luminescent layer 5 in the embodiment shown in
The hole transport material may be a low-molecular weight material or a high-molecular weight material. Examples of such hole transport materials include arylamine derivatives, anthracene derivatives, carbazole derivatives, thiophene derivatives, fluorene derivatives, distyrylbenzene derivatives, and spiro compounds. When the hole transport layer 6 and the monomolecular film 5B are simultaneously formed by the phase separation, the use of N,N′-bis-(3-methylphenyl)-N,N′-bis-(phenyl)-benzidine (TPD) is preferred. The hole transport material is not limited thereto. Specific examples of arylamine derivatives include bis(N-(1-naphthyl-N-phenyl)-benzidine (α-NPD) and copoly[3,3′-hydroxy-tetraphenylbenzidine/diethylene glycol]carbonate (PC-TPD-DEG). Specific examples of carbazoles include polyvinylcarbazole (PVK). Specific examples of thiophene derivatives include poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(bithiophene)]. Specific examples of fluorene derivatives include poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4′-(N-(4-sec-butylphenyl))diphenylamine)] (TFB). Specific examples of spiro compounds include poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-co-(9,9′-spiro-bifluorene-2,7-diyl)]. These materials may be used either solely or in a combination of two or more.
When the hole transport layer 6 is formed in the embodiment shown in
(Electron Transport Layer)
The electron transport layer 7 is provided between the luminescent layer 5 and the cathode 4 and generally functions to transport electrons injected from the cathode 4 toward the luminescent layer 5. In the present invention, as shown in
The reason for this will be described with reference to the embodiment shown in
This is true of the single layer 5A (luminescent layer 5) formed of the hole transport material and the quantum dots 11 shown in
For example, as shown in working examples which will be described later, the electron transport layer 7 formed of BAlq2 has a smaller hole mobility than that of the electron transport layer formed of Alq3 having a hole mobility of not more than 10−7 cm2/V/sec. In the electron transport material used in the electron transport layer, the electron mobility is generally higher than the hole mobility. Accordingly, when the electron transport layer is formed of BAlq2, the difference in mobility between the holes and the electrons is larger than that in the case where the electron transport layer is formed of Alq3. In this case, there is a high possibility that the holes and the electrons are recombined with each other within the electron transport layer at its portion near the interface on the luminescent layer side. Preferably, the recombination occurs at a portion near the interface of the electron transport layer 7 and the luminescent layer 5, and, preferably, excitons generated by the recombination are easily supplied to the quantum dots 11. To this end, while taking into consideration, for example, the thickness and charge mobility of other hole transport layer 6, other electron transport layer and the like, a dopant which delays the hole mobility of the whole or a part of the inside of the electron transport layer 7 and functions as a recombination center may be added so that an area 7A near the luminescent layer 5 becomes a recombination area.
Dopants which cause fluorescent emission or phosphorescent emission may be added. Examples of such dopants include perylene derivatives, coumarin derivatives, rubrene derivatives, quinacridone derivatives, squalium derivatives, porphyrin derivatives, styryl dyes, tetracene derivatives, pyrazoline derivatives, decacyclenes, phenoxazones, quinoxaline derivatives, carbazole derivatives, and fluorene derivatives. Specific examples thereof include 1-tert-butyl-perylene (TBP), coumarin 6, nile red, 1,4-bis(2,2-diphenylvinyl)benzene (DPVBi), and 1,1,4,4-tetraphenyl-1,3-butadiene (TPB). Further, organic metal complexes which has a heavy metal ion such as platinum and iridium at the center thereof and exhibit phosphorescence may be used as phosphorescent dopants. Specific examples thereof include Ir(ppy)3, (ppy)2Ir(acac), Ir(BQ)3, (BQ)2Ir(acac), Ir(THP)3, (THP)2Ir(acac), Ir(BO)3, (BO)2(acac), Ir(BT)3, (BT)2Ir(acac), Ir(BTP)3, (BTP)2Ir(acac), FIr6, and PtOEP.
Whether or not the hole mobility of the electron transport layer 7 has the above hole mobility can be evaluated by the following measurement which will be described later in detail in the working examples. Specifically, for hole mobility measurement, a test piece formed of ITO (150 nm)/PEDOT (20 nm)/αNPD (20 nm)/measuring object (100 nm)/Au (100 nm) is prepared. The term “measuring object” as used herein is an object material of which the hole mobility is to be measured. The test piece having the above construction is provided, and 10 V is applied across both electrodes of the test piece to measure the current value at that time in the hole-only device. The magnitude of the hole mobility can be evaluated by comparing the results obtained by the measurement, for example, with the results of measurement using Alq3 as the measuring object. The hole mobility is a conventional method that measures the mobility. For example, a time-of-flight method (TOF method) may also be used.
The thickness T2 of the recombination area 7A is preferably, for example, 1 nm to 10 nm. Consequently, for example, as shown in
The lower limit of the hole mobility of the electron transport layer 7 is not particularly limited. Likewise, the thickness of the electron transport layer 7 cannot be unconditionally determined but is generally not less than 30 nm and not more than 150 nm, preferably 50 nm to 120 nm, further preferably 70 nm to 100 nm.
Such materials for the formation of the electron transport layer 7 include, for example, metal complexes, oxadiazole derivatives, triazole derivatives, phenanthroline derivatives, silole derivatives, cyclopentadiene derivatives, and silyl compounds. Specific examples thereof include oxadiazole derivatives, for example, (2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole) (PBD); phenanthrolines, for example, bathocuproine (BCP) or bathophenanthroline (BPhen); and aluminum complexes, for example, tris(8-quinolinol)aluminum complex (Alq3) or bis(2-methyl-8-quinolilato)(p-phenylphenolate)aluminum complex (BAlq2). BAlq2 is particularly preferred. The electron transport layer 7 can be formed by either vacuum deposition or coating using a coating liquid containing the above material for the formation of the electron transport layer.
The light emitting device particularly preferably meets [Ip(ETL)]<[Ip(HTL)+1.0 eV] wherein Ip(ETL) represents the absolute value of the ionization potential of an electron transport material that forms the electron transport layer 7; and Ip(HTL) represents the absolute value of the ionization potential of the hole transport material for hole transport layer 6 formation. Since the electron transport layer 7 and the hole transport layer 6 are respectively formed of the electron transport material and the hole transport material having the above relationship, the recombination area 7A can be formed on the luminescent layer side of the electron transport layer 7.
The value of a work function measured with a photoelectron spectrometer AC-1 (manufactured by RIKEN KEIKI Co., Ltd.) was applied to the ionization potential. A layer formed of a material to be measured was formed as a single layer on a cleaned glass substrate (manufactured by Sanyo Vacuum Industries Co., Ltd.) with ITO, and the energy value at which photoelectrons was released was measured with a photoelectron spectrometer AC-1 to determine the ionization potential. The measurement was carried out under conditions of a quantity of light of 50 nW and intervals of 0.05 eV.
(Other Layers)
The electron injection layer (not shown) is optionally provided and functions to facilitate injection of electrons from the cathode 4. Materials for electron injection layer formation include alkali metals, halides of alkali metals, and organic complexes of alkali metals, for example, aluminum, lithium fluoride, strontium, magnesium oxide, magnesium fluoride, strontium fluoride, calcium fluoride, barium fluoride, aluminum oxide, strontium oxide, calcium, sodium polymethylmethacrylate polystyrene sulfonate, lithium, cesium, and cesium fluoride. The electron injection layer can be formed by various methods. The thickness of the electron injection layer may vary depending, for example, upon the material used, but is preferably, for example, approximately 0.1 nm to 30 nm.
The hole injection layer (not shown) is optionally provided and functions to facilitate injection of holes from the anode 3. Materials which have hitherto been known as materials for hole injection layer formation, for example, poly(3,4)ethylenedioxythiophene/polystyrenesulfonate (abbreviated to PEDOT/PSS, manufactured by Bayer Co. Ltd., tradename; Baytron P CH8000, commercially available as an aqueous solution), may be used as the material for hole injection layer formation. The hole injection layer can be formed by various methods. The thickness of the hole injection layer may vary depending, for example, upon the material used, but is preferably, for example, approximately 1 nm to 100 nm.
A passivation layer (not shown) is also optionally provided. The passivation layer is a layer that is provided so as to cover the whole device to prevent the formed luminescent layer 5 and electron transport layer 7 and the like from being deteriorated by water vapor or oxygen. Materials for passivation layer formation include silicon oxide, silicon nitride, and silicon oxynitride. The thickness of the passivation layer may vary depending upon the material for passivation layer formation, and the passivation layer is formed to a thickness large enough to avoid a deterioration by water vapor or oxygen.
The reflective layer (not shown) is also not an indispensable layer. The reflective layer functions to efficiently take out light produced in the luminescent layer 5 into the outside of the device and to enhance luminescence efficiency and thus is preferably provided. The reflective layer may be provided solely as an independent layer, or alternatively may be provided in a resonator structure of a totally reflective layer/semi-transparent reflective layer pair. The reflective layer is generally preferably a transparent electroconductive film or a metal layer such as a gold or chromium layer.
(Energy Diagram)
The characteristics of the light emitting device according to the present invention will be described with reference to an energy diagram.
As described above, according to the light emitting device 1 of the present invention, since the hole mobility of the electron transport layer 7 is smaller than that of tris(8-quinolinolato)aluminum complex (Alq3), holes injected from the anode 3 are passed through the luminescent layer 5 and are recombined with electrons injected from the cathode 4 within the electron transport layer 7 at its portion close to the luminescent layer 5. Excitons 12 generated by the recombination easily migrate into the luminescent layer 5 to cause EL luminescence of the quantum dots 11. Accordingly, the brightness and the luminescence efficiency can be improved, and, thus, a high luminescence efficiency can be realized.
The present invention will be described in more detail with reference to the following Examples. The present invention, however, is not to be construed as being limited thereto.
A thin film (thickness: 150 nm) of indium tin oxide (ITO) was first formed by spattering on a glass substrate to form an anode. The substrate with the anode formed thereon was cleaned and was subjected to UV ozone treatment. Thereafter, a solution of polyethylenedioxythiophene-polystyrene sulfonic acid (abbreviated to “PEDOT-PSS”) was then spin coated in the air onto the ITO thin film, and the coating was dried to form a hole injection layer (thickness: 20 nm).
A mixed solution prepared by mixing N,N′-bis-(3-methylphenyl)-N,N′-bis-(phenyl)-benzidine (TPD) and quantum dots (core: CdSe; shell: ZnS; luminescence wavelength: 520 nm; manufactured by Evident Technologies, Inc.) with toluene was spin coated onto the hole injection layer within a glove box in a low-oxygen (oxygen concentration: not more than 0.1 ppm) and low-humidity (water vapor concentration: not more than 0.1 ppm) state to form a hole transport layer and a luminescent layer (total thickness: 40 nm). The hole transport layer and the luminescent layer were formed by converting a luminescent layer formed of quantum dots to a monomolecular film through the phase separation between TPD and the quantum dots. The weight ratio between TPD and the quantum dots in the mixed solution was TPD/quantum dot=9/2.
A film of bis(2-methyl-8-quinolilato)(p-phenylphenolate)aluminum complex (BAlq2) was formed on the substrate on which layers up to the luminescent layer formed thereto in vacuo (pressure: 5×10−5 Pa) by a resistance heating-type vapor deposition method to form an electron transport layer (thickness: 80 nm). Further, a film of LiF (thickness: 0.5 nm) and a film of Al (thickness: 150 nm) were formed in that order by a resistance heating-type vapor deposition method to form an electron injection layer and a cathode. The assembly was sealed in a glove box in a low-oxygen (oxygen concentration: not more than 0.1 ppm) and low-humidity (water vapor concentration: not more than 0.1 ppm) state with an alkali-free glass to produce a light emitting device.
A voltage was applied across the anode and the cathode in the light emitting device, and the brightness of light emitted in a direction perpendicular to the substrate plane was measured. As a result, light emission derived from the quantum dots was observed. Light emission defects such as dark spots were not observed when the light emitting device was inspected with the naked eye.
A light emitting device of Comparative Example 1 was produced in the same manner as in Example 1, except that, instead of the electron transport layer formed of BAlq2, a 10-nm thick layer of TAZ (3-(4-biphenyl)-4-phenyl-5-t-butylphenyl-1,2,4-triazole) and a 40 nm-thick electron transport layer of Alq3 were formed in that order in vacuo (pressure: 5×10−5 Pa) by a resistance heating-type vapor deposition method.
A light emitting device of Comparative Example 2 was produced in the same manner as in Example 1, except that a 40 nm-thick electron transport layer of Alq3 was formed instead of the electron transport layer of BAlq2.
A light emitting device of Example 2 was produced in the same manner as in Example 1, except that the hole transport layer and the luminescent layer were simultaneously formed by coating, on the hole injection layer, the same mixed solution as in Example 1 except that the mixing ratio of TPD to the quantum dots in the mixed solution was changed to 9:5, and a 60 nm-thick electron transport layer of BAlq2 was formed instead of the electron transport layer of BAlq2 in Example 1.
A light emitting device of Example 3 was produced in the same manner as in Example 2, except that the thickness of the electron transport layer of BAlq2 in Example 2 was changed to 40 nm.
A light emitting device of Example 4 was produced in the same manner as in Example 1, except that the thickness of the electron transport layer of BAlq2 in Example 2 was changed to 20 nm.
(Measurement of Layer Thickness of Light Emitting Devices)
Unless otherwise specified, the thickness of each of the layers according to the present invention was determined by stacking PEDOT-PSS (20 nm) on a cleaned glass substrate with ITO (manufactured by Sanyo Vacuum Industries Co., Ltd.) in the same manner as described above, forming each layer having a single layer structure on the glass substrate, and measuring the thickness of the formed difference in level, provided that the thickness of PEDOT-PSS was excluded. The layer thickness was measured with a probe microscope (Nanopics1000, manufactured by SII NanoTechnology Inc.).
(Current Efficiency and Power Efficiency)
The current efficiency and service lifetime properties of the light emitting devices were evaluated. The current efficiency and the power efficiency were calculated by current-voltage-brightness (I-V-L) measurement. I-V-L measurement was carried out by connecting the cathode to ground and applying a positive direct current voltage to the anode while scanning at 100 mV intervals (1 sec./div.) to record current and brightness at each voltage. The brightness was measured with a luminance meter BM-8 manufactured by TOPCON CORPORATION. Based on the results thus obtained, the luminescence efficiency (cd/A) was calculated from the luminescent area, current, and brightness. The results thus obtained are shown in Tables 1 and 2.
In the light emitting device of Comparative Example 2, the luminescence intensity of Alq3 was higher than that of the quantum dots. The reason for this is believed to reside in that holes which had gone from the luminescent layer into the electron transport layer are recombined within the electron transport layer remote from the interface of the luminescent layer, disadvantageously resulting in luminescence of Alq3 within the electron transport layer (the same results as in non-patent document 1). On the other hand, in the light emitting device of Comparative Example 1, since the layer of TAZ functioned as a hole block layer, the luminescence of TAZ and the luminescence of Alq3 were prevented and, consequently, strong luminescence derived from the quantum dots was observed (the same results as in non-patent document 1).
In the light emitting device produced in Example 1, the luminescence efficiency was higher than that of the light emitting device produced in Comparative Example 1. The reason for this is that holes were introduced into the electron transport layer (BAlq2) constituting the light emitting device of Example 1 and could function as a recombination site. Further, the comparison of the results of the light emitting devices of Examples 2 to 4 shows that, when the thickness of the electron transport layer of BAlq2 is larger, the efficiency is higher because the recombination site is more biased toward the luminescent layer side within the electron transport layer and the produced excitons could efficiently migrate into the luminescent layer.
(Measurement of Hole Mobility)
In order to simply conduct relative evaluation of the hole mobility, the hole mobility of Alq3 and BAlq2 was indirectly relatively evaluated by the following method. A device for mobility measurement was prepared as follows.
A thin film of indium tin oxide (ITO) (thickness: 150 nm) was first formed by sputtering on a glass substrate to form an anode. The substrate with the anode formed thereon was cleaned and subjected to UV ozone treatment. Thereafter, a solution of polyethylenedioxythiophene-polystyrene sulfonic acid (abbreviated to “PEDOT-PSS”) was spin coated in the air onto the ITO thin film, and the coating was dried to form a hole injection layer (thickness: 20 nm). Next, a film of α-NPD and a film of Alq3 were formed in that order by a resistance heating-type vapor deposition method in vacuo (pressure: 5×10−5 Pa) to form a hole transport layer (thickness: 20 nm) and a measuring object layer (thickness: 100 nm) in that order. Further, a film of Au (thickness: 150 nm) was formed by a resistance heating-type vapor deposition method to form a cathode. Further, the assembly was sealed with an alkali-free glass in a glove box in a low-oxygen (oxygen concentration: not more than 0.1 ppm) and low-humidity (water vapor concentration: not more than 0.1 ppm) state to produce a device 1 for mobility measurement.
A device 2 for mobility measurement was produced in the same manner as described above, except that, instead of Alq3, BAlq2 was used as the measuring object layer.
It is considered that, when a voltage is applied to the devices 1 and 2 for mobility measurement, until the voltage increases to a value at which light is emitted, electrons do not flow and only holes flow. Further, the amount of current is greatly governed by the mobility of bulk rather than injection barrier at the interface under a high voltage. Accordingly, the amount of current under a high voltage reflects the hole mobility of the hole transport layer and the measuring object layer. In particular, when the hole mobility of the measuring object layer is lower than that of α-NPD (10−3 cm2/V/sec), the amount of current reflects the hole mobility of the measuring object layer having a larger thickness. For example, the comparison of current density at 10 V upon the application of voltage to the devices 1 and 2 for mobility measurement shows that the current density in the device 2 for mobility measurement is lower, and the hole mobility of BAlq2 is lower than that of Alq3.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2007-256371 | Sep 2007 | JP | national |
| Filing Document | Filing Date | Country | Kind | 371c Date |
|---|---|---|---|---|
| PCT/JP2008/067667 | 9/29/2008 | WO | 00 | 5/5/2010 |
