Patent Application
20130256719
The present invention relates to a light emitting device.
Inorganic electroluminescent (EL) elements have attracted attention because of its long lifetime and power-saving function. In order to make the inorganic EL element emit light, it is necessary to apply a voltage of 200 to 300 V to the inorganic EL element. A conventional power supply device for applying the voltage to the inorganic EL element has a basic configuration in which a commercial AC voltage is boosted and applied to the inorganic EL element, and the AC voltage having a constant voltage and a constant frequency is outputted to make the inorganic EL element emit light (refer to a patent document 1). More specifically, there is a method for applying a sine-wave voltage to the inorganic EL element through a voltage-boost circuit of a series resonance circuit of an electric current resonance type.
However, when the voltage is applied from the conventional power supply device to the inorganic EL element to make the inorganic EL element emit light, there is a problem that the inorganic EL element generates heat.
The present invention was made in such circumstance, and it provides a light emitting device in which heat generation can be suppressed while a voltage is applied.
The present invention provides a light emitting device comprising: a light emitting element including a semiconductor layer, a first electrode, a dielectric layer sandwiched between the semiconductor layer and the first electrode, and a light emitter; and a power supply circuit for applying a voltage between the semiconductor layer and the first electrode, wherein the light emitter is formed in at least one region of regions in the semiconductor layer, in the dielectric layer, between the semiconductor layer and the dielectric layer, and between the first electrode and the dielectric layer, the light emitting element emits light in one of first and second cases, but does not substantially emit light in the other case, the first case using a current applied to the dielectric layer under a condition that the semiconductor layer serves as a positive electrode and the first electrode serves as a negative electrode, the second case using a current applied to the dielectric layer under a condition that the semiconductor layer serves as the negative electrode and the first electrode serves as the positive electrode, and the power supply circuit is electrically connected to each of the semiconductor layer and the first electrode so that a unidirectional current flows in the dielectric layer while the light emitting element emits the light.
According to the present invention, the light emitting element includes the semiconductor layer, the first electrode, the dielectric layer sandwiched between the semiconductor layer and the first electrode, and the light emitter, and the light emitter is formed in at least one region of regions in the semiconductor layer, in the dielectric layer, between the semiconductor layer and the dielectric layer, and between the first electrode and the dielectric layer, so that when the voltage is applied between the semiconductor layer and the first electrode, the light emitting element can emit the light.
According to the present invention, the light emitting element emits light in one of first and second cases, but does not substantially emit light in the other case, the first case using a current applied to the dielectric layer under a condition that the semiconductor layer serves as a positive electrode and the first electrode serves as a negative electrode, the second case using a current applied to the dielectric layer under a condition that the semiconductor layer serves as the negative electrode and the first electrode serves as the positive electrode. Therefore, when the voltage is applied to the light emitting element such that the current flows in the dielectric layer in the constant direction in which the light emitting element emits the light, the light emitting element can efficiently emit the light with less power consumption.
According to the present invention, the voltage is applied to the light emitting element such that the current does not flow in the dielectric layer in the direction in which the light is not substantially emitted, so that the power outputted from the drive power supply is prevented from being converted to heat, and the light emitting element can be prevented from generating heat.
a) to (d) are schematic cross-sectional views showing configurations of light emitting elements included in the light emitting device according to each one embodiment of the present invention.
a) to (c) are circuit diagrams showing power supply circuits in which drive power supplies apply voltages to the light emitting elements included in the light emitting device according to each one embodiment of the present invention.
A light emitting device according to the present invention comprises: a light emitting element including a semiconductor layer, a first electrode, a dielectric layer sandwiched between the semiconductor layer and the first electrode, and a light emitter; and a power supply circuit for applying a voltage between the semiconductor layer and the first electrode, wherein the light emitter is formed in at least one region of regions in the semiconductor layer, in the dielectric layer, between the semiconductor layer and the dielectric layer, and between the first electrode and the dielectric layer, the light emitting element emits light in one of first and second cases, but does not substantially emit light in the other case, the first case using a current applied to the dielectric layer under a condition that the semiconductor layer serves as a positive electrode and the first electrode serves as a negative electrode, the second case using a current applied to the dielectric layer under a condition that the semiconductor layer serves as the negative electrode and the first electrode serves as the positive electrode, and the power supply circuit is electrically connected to each of the semiconductor layer and the first electrode so that a unidirectional current flows in the dielectric layer while the light emitting element emits the light.
Preferably, in the light emitting device of the present invention, the light emitting element is higher in electric resistance in a case where the current flows in the dielectric layer while the light emitting element emits the light than in a case where the current flows in the dielectric layer while the light emitting element does not emit the light.
According to this configuration, the light emitting element can emit the light with less power consumption.
Preferably, in the light emitting device of the present invention, the power supply circuit comprises a rectifying diode to apply the current to the dielectric layer provided between the semiconductor layer and the first electrode, and the power supply circuit is supplied with a power from an AC power supply.
According to this configuration, even when the AC power supply is used as the drive power supply, the voltage can be applied to the light emitting element so that the unidirectional current flows in the dielectric layer.
Preferably, in the light emitting device of the present invention, the power supply circuit is supplied with a power from a DC power supply.
According to this configuration, the voltage can be applied to the light emitting element so that the unidirectional current flows in the dielectric layer.
Preferably, in the light emitting device of the present invention, the semiconductor layer is made of an n-type semiconductor or a p-type semiconductor, and the power supply circuit is electrically connected to each of the semiconductor layer and the first electrode so that the semiconductor layer serves as the positive electrode and the first electrode serves as the negative electrode when the semiconductor layer is made of the n-type semiconductor, while the power supply circuit is electrically connected to each of the semiconductor layer and the first electrode so that the semiconductor layer serves as the negative electrode and the first electrode serves as the positive electrode when the semiconductor layer is made of the p-type semiconductor.
According to this configuration, when the voltage is applied to the light emitting element so that the unidirectional current flows in the dielectric layer, the light emitting element can emit the light.
Preferably, in the light emitting device of the present invention, the light emitter comprises germanium atoms.
According to this configuration, the light emitting element can emit the light.
Preferably, in the light emitting device of the present invention, the light emitter comprises ZnS.
According to this configuration, the light emitting element can emit the light.
Preferably, in the light emitting device of the present invention, the light emitting element has a surface temperature of 60° C. or lower in the case where the current flows in the dielectric layer while the light emitting element emits the light.
According to this configuration, even when the light emitting element is mounted on an opto-electronic circuit, the heat generation of the light emitting element can be prevented from affecting another element. In addition, even when the light emitting element is used for a light source such as illumination, the heat generation of the light emitting element can be prevented from being involved in deterioration in brightness.
Hereinafter, one embodiment of the present invention will be described with reference to the drawings. Configurations shown in the drawings and the following description are illustrative and the scope of the present invention is not limited to those described in the drawings and the following description.
A light emitting device 20 according to this embodiment comprises: a light emitting element 12 including a semiconductor layer 1, a first electrode 7, a dielectric layer 3 sandwiched between the semiconductor layer 1 and the first electrode 7, and a light emitter 5; and a power supply circuit 13 for applying a voltage between the semiconductor layer 1 and the first electrode 7, wherein the light emitter 5 is formed in at least one region of regions in the semiconductor layer 1, in the dielectric layer 3, between the semiconductor layer 1 and the dielectric layer 3, and between the first electrode 7 and the dielectric layer 3, the light emitting element 12 emits light in one of first and second cases, but does not substantially emit light in the other case, the first case using a current applied to the dielectric layer 3 under a condition that the semiconductor layer 1 serves as a positive electrode and the first electrode 7 serves as a negative electrode, the second case using a current applied to the dielectric layer 3 under a condition that the semiconductor layer 1 serves as the negative electrode and the first electrode 7 serves as the positive electrode, and the power supply circuit 13 is electrically connected to each of the semiconductor layer 1 and the first electrode 7 so that a unidirectional current flows in the dielectric layer 3 while the light emitting element 12 emits the light.
Hereinafter, the light emitting device 20 in this embodiment will be described.
The light emitting element 12 includes the semiconductor layer 1, the first electrode 7, the dielectric layer 3 sandwiched between the semiconductor layer 1 and the first electrode 7, and the light emitter 5. In addition, the light emitter 5 is formed in at least one region of regions in the semiconductor layer 1, in the dielectric layer 3, between the semiconductor layer 1 and the dielectric layer 3, and between the first electrode 7 and the dielectric layer 3. In addition, the light emitting element 12 emits light in one of first and second cases, but does not substantially emit light in the other case, the first case using a current applied to the dielectric layer 3 under a condition that the semiconductor layer 1 serves as a positive electrode and the first electrode 7 serves as a negative electrode, the second case using a current applied to the dielectric layer 3 under a condition that the semiconductor layer 1 serves as the negative electrode and the first electrode 7 serves as the positive electrode. In addition, according to this application, the current flowing in the dielectric layer 3 in the case where the light emitting element 12 emits the light is referred to as a “current accompanied with the light emission”, and the current flowing in the dielectric layer 3 in the case where the light emitting element 12 does not substantially emit the light is referred to as a “current not accompanied with the light emission”. The light emitting element 12 may be an inorganic EL element. In addition, the term “the light emitting element 12 does not substantially emit light” includes a case where the light emitting element 12 does not emit the light even when the current flows in the dielectric layer 3, and a case where an emitted light amount provided when the “current not accompanied with the light emission” flows in the dielectric layer 3 is sufficiently small compared with an emitted light amount provided when “the current accompanied with the light emission” flows therein.
The light emitting element 12 may have high electric resistance in the case where the current accompanied with the light emission flows in the dielectric layer 3, compared with the case where the current not accompanied with the light emission flows in the dielectric layer 3. In this case, in a case where the same voltage is applied between the semiconductor layer 1 and the first electrode 7 with polarities reversed, a magnitude of the “current not accompanied with the light emission” is greater than a magnitude of the “current accompanied with the light emission”. In addition, when it is assumed that a light emission voltage threshold represents −Va, and a current value at this time represents −I1, a current value +I2 when a voltage of +Va is applied can be |I2|>10×|I1|.
According to a light emission mechanism of the light emitting element 12, it is considered that an electric field is formed in the dielectric layer 3 and the semiconductor layer 1 by a voltage applied between the semiconductor layer 1 and the first electrode 7, electrons introduced from the semiconductor layer 1 or the first electrode 7 to the dielectric layer 3 are accelerated by the electric field, and the accelerated electrons excite the light emitter 5 and its excited level is relaxed, whereby the light emitter 5 emits the light.
The semiconductor layer 1 is provided so as to sandwich the dielectric layer 3 with the first electrode 7, and can serve as an electrode for applying the voltage from the drive power supply 15 to the dielectric layer 3. The semiconductor layer 1 is not limited in particular as long as it is made of a semiconductor which can serve as the electrode, and it may be a p-type semiconductor or an n-type semiconductor, for example. As for many semiconductor materials, their resistivity can be adjusted by impurity doping. In addition, when the light emitting element 12 is mounted on an opto-electronic substrate, it is to be configured as a discrete element to be provided on the semiconductor substrate without being bonded, because it is thought that there is a merit in an aspect such as an occupied area.
The semiconductor layer 1 may have both of the p-type semiconductor and the n-type semiconductor on a surface which is in contact with the dielectric layer 3. In addition, the semiconductor layer 1 may be a semiconductor layer formed on the substrate, may be a semiconductor substrate, or may be a part of the semiconductor substrate. More specifically, it can be a p-type silicon substrate or an n-type silicon substrate, for example. In addition, it may be provided by forming p-type silicon or n-type silicon on a SiO2 substrate, or forming the dielectric layer 3 of SiO2 on a Si substrate and forming p-type silicon or n-type silicon thereon. In this case, the light emitting element 12 may be formed on a crystal silicon substrate included in a SOI (Silicon On Insulator) substrate, or amorphous silicon is formed on the dielectric layer 3 of SiO2 by CVD, and the light emitting element 12 may be formed thereon.
The first electrode 7 is provided to sandwich the dielectric layer 3 with the semiconductor layer 1, and can serve as an electrode for applying the voltage from the drive power supply to the dielectric layer 3. The first electrode 7 is not limited in particular as long as it serves as the electrode, but it preferably has translucency. The first electrode 7 can be a translucent electrode, for example. In addition, transmittance of the first electrode 7 for light having a wavelength between 300 nm and 500 nm may be 60% to 99.99%. Thus, the light emitted from the light emitter 5 can be taken out from a side of the first electrode. The first electrode 7 is a metal oxide thin film of ITO, a metal thin film of Al, Ti, or Ta, or a semiconductor thin film of Si, SiC, or GaN, for example.
The dielectric layer 3 is provided so as to be sandwiched between the semiconductor layer 1 and the first electrode 7. For example, the dielectric layer 3 is made of silicon oxide, silicon nitride, or silicon oxynitride. In addition, since the film can be formed of silicon oxide, silicon nitride, or silicon oxynitride by a general silicon semiconductor process, its productivity is great and it can be combined with another electronic circuit. In addition, when it is assumed that the dielectric layer 3 is made of silicon oxide, and the semiconductor layer 1 is the silicon substrate, the dielectric layer 3 can be a thermally-oxidized film of the silicon substrate, so that it can be easily formed.
A thickness of the dielectric layer 3 is between 10 nm and 100 nm (a range between any two of 10, 20, 30, 40, 50, 60, 70, 80, 90, and 100 nm, for example).
The dielectric layer 3 can have translucency. In this case, the light emitted from the light emitter 5 can be extracted. Light transmittance of the dielectric layer 3 for light having a wavelength of 300 to 500 nm is preferably 80% or higher. In a case where the light emitter 5 is composed of fine particles containing GeO and GeO2, a peak wavelength of the light emitted from the light emitter 5 is around 390 nm, if the transmittance of the light with the wavelength of 300 to 500 nm is high, a light extraction efficiency is heightened correspondingly.
The light emitter 5 is formed in at least one region of regions in the semiconductor layer 1, in the dielectric layer 3, between the semiconductor layer 1 and the dielectric layer 3, and between the first electrode 7 and the dielectric layer 3.
The atom of the light emitter 5 includes germanium atom, silicon atom, or tin atom, and it can be formed by implanting ions of the germanium atoms or the like into the dielectric layer 3 made of silicon oxide. The fine particle of the light emitter 5 includes germanium fine particle, for example. In addition, the layer-shaped light emitter 5 includes a layer made of ZnS.
Hereinafter, the case where the light emitter 5 is made of germanium fine particles will be described.
The germanium fine particles can be formed by implanting ions of the germanium atoms into the dielectric layer 3 made of silicon oxide and aggregating the germanium atoms through a heat treatment, for example. In this case, the formed germanium particles may be subjected to a heat treatment to become germanium fine particles containing a germanium oxide. Furthermore, the germanium atom contained in the germanium oxide may be divalent or quadrivalent, or the divalent germanium atom (hereinafter, referred to as Ge2+) and the quadrivalent germanium atom (hereinafter, referred to as Ge4+) may be mixed. In addition, a number density of an atom composing the light emitter 5 in the dielectric layer 3 is, for example, 1×1016/cm3 to 1×1021/cm3.
The light emitter 5 is preferably a fine particle having a maximum particle diameter between 1 nm and 20 nm. It is because light emission efficiency is particularly heightened in this case. In the present invention, the “maximum particle diameter” means a diameter of the fine particle whose diameter is maximum among the fine particles which can be observed when a TEM observes a range of 100 nm square in a certain cross-sectional surface (which may be a cross-sectional surface shown in
A ratio of Ge2+ to an entire germanium oxide (Ge4++Ge2+) can be determined by measuring peak surface area SGe4+ attributed to Ge4+ and peak surface area SGe2+ attributed to Ge2+ in a spectrum near 3d peak of Ge of XPS spectrum, and calculating SGe2+/(SGe4++SGe2+). As an X-ray source for the XPS measurement, Al, K-α ray (1486.6 eV) made monochromatic can be employed, for example. The peak attributed to Ge4+ and the peak attributed to Ge2+ are overlapped in skirt parts; however Gaussian-fitting may be carried out to separate a waveform of the peak attributed to Ge4+ and the peak attributed to Ge2+ and thus the surface areas SGe4+ and SGe2+ can be measured. Peak energies of Ge4+ and Ge2+ are about 33.5 eV and 32 eV, respectively.
In the case where the light emitter 5 is the germanium fine particles containing Ge2+ and Ge4+, the light emitter 5 can contain 10% or more of Ge2+ when assuming that a total of Ge2+ and Ge4+ is 100%. When the ratio of Ge2+ is too small, the emission may sometimes be impossible or emission intensity may become too low. More specifically, the ratio of Ge2+ is 10, 20, 30, 40, 50, 60, 70, 80, 90, 95, 99, or 100%, for example. The ratio of Ge2+ may be in a range of whichever two numeral values exemplified herein.
By the way, in the spectrum near 2p peak of Ge of the XPS spectrum, an oxidation rate of Ge can be determined by measuring peak surface area SGe attributed to zero-valent germanium (hereinafter, referred to as Geo) and peak surface area S(oxidation)Ge attributed to germanium oxide (Ge2+ and Ge4+), and calculating SGe2+/(SGe+S(oxidation)Ge). An average value of the oxidation rate is not limited in particular, and it is 1, 5, 10, 15, 20, 25, 30, 34.9, 35, 40, 45, 50, 55, 60, 60.1, 65, 70, 70.1, 75, 80, 85, 90, 95, 99, or 100%, for example. The average value of this oxidation rate may be in a range of whichever two numeral values exemplified herein.
As for the light emitting element 12 in which the light emitter 5 is composed of the germanium fine particles formed in the dielectric layer 3, a peak of a wavelength of electroluminescence (EL) when a voltage is applied between the semiconductor layer 1 and the first electrode 7 falls within a range of 340 to 440 nm (more strictly, 350 to 430 nm, 360 to 420 nm, 370 to 410 nm, 380 to 400 nm, or 385 to 395).
A second electrode 10 is formed to be electrically connected to the semiconductor layer 1. The semiconductor layer 1 can be connected to the drive power supply 15 through the second electrode. Alternatively, the semiconductor layer 1 can be connected to the ground through the second electrode. The second electrode 10 can be a metal electrode such as an aluminum electrode, for example.
The drive power supply 15 applies the voltage between the semiconductor layer 1 and the first electrode 7 so that a unidirectional current flows in the dielectric layer 3 while the light emission element 12 emits the light. A power outputted from the drive power supply 15 is supplied to the light emitting element 12 through the power supply circuit 13. The drive power supply 15 may be a DC power supply or an AC power supply as long as a direction of the current flowing in the dielectric layer 3 is constant. In addition, in the case where the drive power supply 15 is the AC power supply, a rectifying diode 16 may be included in the power supply circuit 13 used when the drive power supply 15 applies the voltage to the dielectric layer 3. In this case, power supply having an opposite polarity is converted and a voltage having a desired polarity can be outputted. In addition, a voltage-boost circuit or a voltage-drop circuit may be included in the power supply circuit 13 used when the drive power supply 15 applies the voltage to the dielectric layer 3. In this case, the output of the drive power supply 15 can be converted to a desired voltage value and outputted to the light emitting element 12.
In addition, in the present invention, the “unidirectional current” means a current in which a current value is increased as an applied voltage is increased and a current flow direction is constant.
In the case where the drive power supply 15 is the AC power supply, the drive power supply may be a power supply which outputs a voltage having a desired waveform. The drive power supply 15 may output a square-wave voltage, or may output a sine-wave voltage.
In addition, as shown in
In addition, as shown in
Hereinafter, a description will be given of a method for fabricating the light emitting element 12 when the light emitter 5 is composed of the germanium fine particles.
In a case where as the semiconductor layer 1, the p-type silicon substrate or the n-type silicon substrate is used, this can serve as the semiconductor layer 1. Alternatively, the semiconductor layer 1 may be formed in a part of the silicon substrate by diffusing a p-type impurity or an n-type impurity in the silicon substrate.
The dielectric layer 3 is formed on the semiconductor layer 1. For example, the dielectric layer 3 can be formed of silicon oxide by performing a heat treatment on the silicon substrate, or the dielectric layer 3 can be formed by depositing a silicon oxide or a silicon nitride by CVD or sputtering.
The light emitter 5 is formed in the dielectric layer 3. A method for forming the light emitter 5 in the dielectric layer 3 is not limited in particular, but as a conceivable method, germanium ions are implanted into the dielectric layer 3, and then a heat treatment is performed. The germanium ions are aggregated by the heat treatment after the ion implantation and many fine particles are formed in the dielectric layer, and Ge0 is oxidized and the germanium oxides including Ge2+ and Ge4+ are formed. The ion implantation of germanium can be performed under a condition that an implantation energy is set to 5 to 100 keV, and an implantation amount is 1×1014 to 1×1017 ions/cm2.
The ratio of Ge2+ and Ge4+ can be appropriately adjusted by changing the implantation amount of germanium, a heat treatment time, a heat treatment temperature, a heat treatment atmosphere, or the like. More specifically, by adjusting a partial pressure and a flow rate of oxygen in the heat treatment atmosphere, the ratio of Ge2+ can be increased. For example, in a case where an atomic concentration of germanium in the silicon oxide with a film thickness of 100 nm is 10% or lower, when an inert gas is supplied (50 mL per minute) while vacuum evacuation is carried out (400 L per minute) in a heat treatment for one hour at 800° C., germanium is partially combined with oxygen, but not completely oxidized because oxygen is insufficient, and Ge2+ can be formed. In an atmosphere having one atmospheric pressure in which 20% by volume of oxygen is mixed in the inert gas, an amount of Ge4+ is increased and an amount of Ge2+ is reduced because oxygen is supplied too much. An atmosphere suitable to increase the ratio of Ge2+ is influenced by other parameters such as germanium implantation condition, and the heat treatment time and temperature, but as one example, the ratio of Ge2+ can be increased by setting the atomic concentration of germanium relatively high, and supplying a gas in which the oxygen is mixed to the inert gas while vacuum evacuation is carried out.
In addition, the ion implantation of germanium is preferably performed so that the germanium concentration in the dielectric layer 3 reaches 0.1 to 10.0% by atom. This is because in a case where the inert gas is supplied (50 mL per minute) while vacuum evacuation is carried out (400 L per minute) in a heat treatment for one hour at 600° C., light emission efficiency can be relatively high in this range. More specifically, the germanium concentration is 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1.0, 2.0, 3.0, 4.0, 5.0, 6.0, 7.0, 8.0, 9.0, or 10.0% by atom. This concentration may be in a range of whichever two numeral values exemplified herein. The germanium concentration can be measured by a high-resolution RBS (Rutherford back scattering) method. In addition, it can be measured by various analysis methods such as SIMS (secondary ion mass spectrometry). In addition, the germanium concentration is measured to the extent that the germanium concentration reaches 1/100 or more of a peak value. A temperature of the heat treatment is preferably 400 to 900° C., and more preferably 500 to 800° C. This is because the light emission efficiency is relatively high in this range.
A translucent electrode serving as the first electrode 7 is formed on the dielectric layer 3 in which the light emitter 5 is formed. For example, when it is an ITO electrode, it can be formed by coating, sputtering, or the like.
The second electrode 10 is formed so as to be electrically connected to the semiconductor layer 1. A method for forming the second electrode is not limited in particular, and an aluminum electrode, for example, can be formed on the semiconductor layer 1 by coating, sputtering, or the like.
An experiment was performed to confirm the effect of the light emitting device in the present invention by a following method.
First, an n-type silicon substrate having an impurity concentration of 5×1015 cm−3 was thermally oxidized in an oxygen atmosphere at 1050° C., whereby a thermally-oxidized silicon film of 60 nm was formed on its surface.
Then, Ge ions were implanted into the thermally-oxidized silicon film under a condition of 9.2×1015 ions/cm2 at 50 keV.
Then, the silicon substrate in which the thermally oxidized film was formed was set in an electric furnace, and subjected to a heat treatment at 600° C. for one hour while vacuuming was performed by a rotary pump and nitrogen was introduced.
Then, an ITO electrode was formed on the thermally-oxidized silicon film, and an aluminum electrode was formed on a side of the silicon substrate, whereby a light emitting element used for an EL experiment was obtained.
The fabricated EL element has a cross-sectional surface like a cross-sectional view of the light emitting element 12 shown in
Under a condition that the aluminum electrode of this light emitting element was connected to the ground, when a voltage was applied to the thermally-oxidized silicon film (dielectric layer 3) with the n-type silicon substrate (semiconductor layer 1) serving as the positive electrode and the ITO electrode (first electrode 7) serving as the negative electrode while ITO electrode was at about −40 V, it was confirmed that blue light was emitted.
As for the above EL element, the n-type silicon substrate was used as the semiconductor layer 1, so that when the negative voltage was applied between the ITO electrode and the silicon substrate, the light was emitted. In the case where the p-type silicon substrate is used as the semiconductor layer 1, when the positive voltage is applied between the ITO electrode and the silicon substrate, the light is emitted.
In addition,
In addition, with an n-type silicon substrate and a p-type silicon substrate each having an impurity concentration of 1.0×1017 cm−3, light emitting elements were fabricated by the same method, respectively, and a voltage was applied between the silicon substrate and the ITO electrode, but light emission was not confirmed. Furthermore, with a p-type silicon substrate having an impurity concentration of 5×1015 cm−3, a light emitting element was fabricated by the same method, and when a voltage was applied between the silicon substrate and the ITO electrode, light emission was confirmed.
As a result, it has been found that the light emitting element can emit the electroluminescence light by fabricating the light emitting element with the silicon substrate having the impurity concentration of 5×1015 cm−3 or less.
The aluminum electrode of the fabricated EL element was connected to the ground, and a potential of the ITO electrode was changed between −70 V and +70 V, and I-V characteristics and light emission-voltage characteristics of the EL element were measured.
In addition, referring to
Next, a surface temperature of the EL element at the time of the voltage application was measured. More specifically, a type-k thermocouple wrapped with a thin polyimide tape was attached to the aluminum electrode surface connected to the ground in the fabricated EL element, the drive power supply was connected to the ITO electrode, the voltage was applied to the EL element at 25° C. by each of methods 1 to 8 described in table 1, and the surface temperature of the EL element was measured. The reason why the thermocouple was wrapped with the polyimide tape is to prevent the current flowing in the EL element at the time of the voltage application from affecting the temperature measurement.
A result of this measurement is shown in table 1. An element temperature shown in table 1 is provided by calculating a measurement average value for 100 seconds after the voltage has been applied by each method and the element temperature has reached its saturated state.
According to the voltage application methods 1 to 3 in table 1, each shows an element surface temperature when the square-wave voltage is applied to the EL element, and a maximum voltage and a minimum voltage are different from each other.
It has been found that according to the voltage application methods 1 and 2, the element surface temperature is 70° C. or more, while according to the voltage application method 3, the element surface temperature is as low as about 30° C. According to the voltage application methods 1 and 2, since the maximum voltage is +60 V, the ITO electrode serves as the positive electrode and the silicon substrate serves as the negative electrode, so that the current (current not accompanied with the light emission) flows in the thermally-oxidized film, but according to the voltage application method 3, since the maximum voltage is 0 V, it is considered that the “current not accompanied with the light emission” does not flow. Therefore, it has been found that when the “current not accompanied with the light emission” flows, an amount of heat generation of the EL element is large. In addition, it has been found that when the voltage is applied to the EL element such that this “current not accompanied with the light emission” will not flow, the heat generation of the EL element can be suppressed.
In addition, according to the voltage application methods 1 and 3, since the minimum voltage is −60 V, the ITO electrode serves as the negative electrode and the silicon substrate serves as the positive electrode, so that the current (“current accompanied with the light emission”) flows in the thermally-oxidized film, but according to the voltage application method 2, since the minimum voltage is 0 V, it is considered that the “current accompanied with the light emission” does not flow. According to the voltage application method 3, the element surface temperature is as low as 30° C., and according to the voltage application method 1, the voltage is only higher by 15° C. than the voltage application method 2. Therefore, it has been found that even when the “current accompanied with the light emission” flows, the amount of heat generation of the EL element is small.
According to the voltage application method 4 in table 1, it shows an element surface temperature when the sine-wave voltages of a maximum voltage +60 V and a minimum voltage −60 V are applied to the EL element. Compared with the voltage application method 1 in which the maximum voltage and the minimum voltage are the same, the temperature rise is suppressed to be lower in the voltage application method 4. It is considered that this is because the applied voltage in the voltage application method 4 is the sine wave, so that the “current not accompanied with the light emission” is small.
According to the voltage application methods 5 and 6 shown in table 1, each shows an element surface temperature when a DC voltage is applied to the EL element so that the ITO electrode reaches −60 V or +60 V. According to the voltage application method 5, the element surface temperature is as low as 35° C. It is considered that this is because the voltage is applied so that the ITO electrode reaches −60 V, so that the “current accompanied with the light emission” flows, but the “current not accompanied with the light emission” does not flow. According to the voltage application method 6, the element surface temperature is as high as 115° C. It is considered that this is because the voltage is applied so that the ITO electrode reaches +60 V, so that the “current accompanied with the light emission” flows a lot, but the “current not accompanied with the light emission” does not flow.
According to the voltage application methods 7 and 8 in table 1, each shows an element surface temperature when square-wave voltages of a maximum voltage +60 and a minimum voltage −60V which are symmetrical with respect to 0 V to be positive and negative are applied to the EL element with a duty ratio changed. Here, the duty ratio means (application time of positive voltage)/(application time of positive voltage+application time of negative voltage). From the above results, it has been found that as the application time of the positive voltage is increased, the element surface temperature is increased.
To summarize the above, it has been found that as for the fabricated EL elements, when only the negative voltage is applied, the heat generation can be suppressed to be small without regard to its waveform, but when the positive voltage is applied a little, the heat generation is immediately increased. Especially, in the case of the opto-electronic circuit, the LSI and the light emitting element are closely provided, and the LSI is strongly influenced by temperature, so that the heat generation is preferably small. As one target, the element surface temperature is preferably suppressed to be 85° C. or lower. This temperature 85° C. is one target for reliability of the LSI or the like. In addition, the element surface temperature is preferably suppressed to be 60° C. or lower.
In order to suppress the element surface temperature, it is preferable that the drive power supply only applies the voltage having the polarity to the light emitting element. In order to attain this configuration, the drive power supply is to be composed of the DC power supply, or the AC power supply having the diode provided in a supply line.
Next, a light emitting time was measured when the voltage was applied to the EL element by each of the voltage application method 1 (square wave, maximum voltage=+60 V, minimum voltage=−60 V) and the voltage application method 3 (square wave, maximum voltage=0 V, minimum voltage=−60 V). A result of this is shown in
The EL element fabricated in this experiment contains the germanium atoms or germanium oxides as the light emitter, but the EL element may contain ZnS as the light emitter. In addition, the EL element may contain both of the germanium atoms or germanium oxides and ZnS. The EL element can be fabricated by additionally introducing ZnS to the light emitting layer containing the germanium atoms or germanium oxides, by ion implantation or CVD.
By a method shown hereinafter, it has been confirmed that the germanium oxides (including Ge4+ and Ge2+) are related to the light emission of the light emitting element according to the present invention.
First, two hypotheses about the light emitting mechanism were made. According to a first hypothesis, Ge nanoparticles cause the light emission due to a quantum size effect. This light emission mechanism is the same as a light emission mechanism of normal nanoparticles, and a light emission wavelength depends on a particle size. According to a second hypothesis, the germanium oxides (including Ge4+ and Ge2+) are related to the light emission. An energy level difference of GeO (Ge2+) between an excited state and a ground state is 2.9 to 3.2 eV (387 to 427 nm) (refer to L. Skuja, J. Non-Cryst. Solids, 239 (1998) 16-48.), so that according to the second hypothesis, the light emission wavelength is about 387 to 427 nm, and it is considered that this wavelength does not depend on a particle size.
In order to verify which hypothesis of them is correct, light emitting elements were fabricated under variously different temperature conditions and implantation conditions, and an EL wavelength when the voltage was applied to each of the light emitting elements by each of the above methods was measured. The EL wavelength was measured with “spectrofluorophotometer RF-5300PC made by Shimadzu Corporation). A method for manufacturing the light emitting element was the same as that described in the “1. Effect confirming experiment” except that the heat treatment temperature and the Ge implantation amount were appropriately changed.
Obtained results are shown in
Referring to
As described above, it is found that the EL wavelength from the light emitting element in the present invention cannot be explained by the first hypothesis but can be explained by the second hypothesis. Therefore, it can be confirmed that the germanium oxides (including Ge4+ and Ge2+) are related to the light emission of the light emitting element of the present invention.
By the way, referring to
A light emitting element was manufactured according to the method described in the “1. Effect confirming experiment”, and a depth direction distribution of the ratios of Ge0, Ge2+, and Ge4+ in the silicon oxide film was examined. A Ge concentration of the light emitting element manufactured here is 5.0% by atom, and a heat treatment temperature thereof is 800° C. (a time is one hour).
Since a range between a sample surface and a depth of several nm can be analyzed by the XPS in general, etching with argon ion beam and the XPS measurement were alternately performed to examine a change in ratio of Ge0, Ge2+, and Ge4+ in the depth direction in a region to a depth of 50 nm. An energy of the argon ion beam was 4 kV, a beam current was 15 mA, and irradiation was performed for 300 seconds at one time.
According to this, in a region of depth 10 to 50 nm having relatively high Ge implantation concentration implanted by the implantation method described in the “1. Effect confirming experiment”, a ratio of Ge0 which is not oxidized is 30 to 70%. In addition, Ge4+ is between 0 and 20%, and about 10%. In addition, Ge2+ in which Ge is not completely oxidized but partially oxidized is between 10 and 50%.
The ratio of Ge0, Ge2+, and Ge4+ in each depth was determined by measuring the peak surface area SGe attributed to Ge0, the peak surface area SGe2+ attributed to Ge2+, and the peak surface area SGe4+ attributed to Ge4+, and calculating SGe/(SGe+SGe2++SGe4+), SGe2+/(SGe+SGe2++SGe4+), and SGe4+/(SGe+SGe2++SGe4+) in each depth, in the XPS spectrum near 3d peak of Ge of the spectrum. The XPS spectrum was measured with Al, K-α ray (1486.6 eV) made monochromatic used as an X-ray source.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2010-228751 | Oct 2010 | JP | national |
| Filing Document | Filing Date | Country | Kind | 371c Date |
|---|---|---|---|---|
| PCT/JP2011/066720 | 7/22/2011 | WO | 00 | 6/12/2013 |
