The present invention relates to a light-emitting device comprising a light-emitting element such as a light-emitting diode.
Recently, in a field of lighting, for example, development is in progress of light-emitting devices comprising a light-emitting element. A light-emitting element is a light-emitting diode made of a semiconductor material, for example. Some of the light-emitting devices include a base and a frame member. In the development of light-emitting devices, improvement in light-emitting property is required.
In one aspect of the invention, a light-emitting device comprises a base, a frame member and a light-emitting element. The light-emitting device further comprises an intervening layer. The frame member is disposed on the base. The light-emitting element is made of a semiconductor material. The light-emitting element is disposed in a region defined by the frame member, and mounted on the base. The intervening layer contains a plurality of light transmitting particles, and is disposed between the base and the frame member.
In another aspect of the invention, a light-emitting device comprises a base, a light source and reflecting means. The light-emitting device further comprises an intervening layer. The light source is disposed on the base, and emits primary light. The reflecting means changes a direction of travel of part of the primary light. The intervening layer contains a plurality of light transmitting particles that absorb part of the primary light, and bonds the base and the reflecting means to each other.
According to the above-mentioned one aspect of the invention, since the light-emitting device comprises the intervening layer which contains the plurality of light transmitting particles and is disposed between the base and the frame member, effect by light that is emitted from the light-emitting element and then enters between the base and the frame member is reduced.
According to the above-mentioned another aspect of the invention, since the light-emitting device comprises the intervening layer which contains the plurality of light transmitting particles that absorb part of the primary light, effect by light that is emitted from the light-emitting element and then enters between the base and the frame member is reduced.
Other and further objects, features, and advantages of the invention will be more explicit from the following detailed description taken with reference to the drawings wherein:
Hereafter, a preferable embodiment of the invention will be described with reference to the drawings.
A lighting apparatus 100 according to an embodiment of the invention is shown in
As shown in
In
The base 11 is made of an insulating material. An example of insulating materials is ceramics. An example of ceramics is alumina. Another example of insulating materials is resin. An external terminal 17 is fixed to the base 11.
The frame member 12 is disposed on the base 11. The frame member 12 is made of an insulating material. An example of insulating materials is ceramics. An example of ceramics is alumina. Another example of insulating materials is resin. Another example of the material of the frame member 12 is a metal material. The frame member 12 is means for reflecting primary light emitted from the light-emitting element 13.
The light-emitting element 13 is mounted on the base 11, and disposed in a region defined by the frame member 12. “A region defined by the frame member 12” means a region in which the light-emitting element 13 is disposed such that light emitted from the light-emitting element 13 reaches the frame member 12. The light-emitting element 13 is surrounded by the frame member 12.
The light-emitting element 13 is a light-emitting diode (LED) made of a semiconductor material. The light-emitting element 13 is made of a plurality of semiconductor layers including an active layer. The light-emitting element 13 is a light source that emits primary light. The primary light is included in a wavelength region ranging from 210 nm to 500 nm or overlaps with the wavelength region.
As shown in
As shown in
The n-type semiconductor layer 13n and the p-type semiconductor layer 13p are stacked on a light transmitting substrate 13b. The semiconductor active layer 13a is formed between the n-type semiconductor layer 13n and the p-type semiconductor layer 13p. The light-emitting element 13 comprises electrodes 13pp and 13np. The p-side electrode 13pp is formed on the p-type semiconductor layer 13p. The n-side electrode 13np is formed on the n-type semiconductor layer 13n.
The intervening layer 14 is disposed between the base 11 and the frame member 12. The intervening layer 14 contains a matrix material 14-1 and a plurality of light transmitting particles 14-2. The intervening layer 14 is an adhesive that fixes the base 11 and the frame member 12. An example of the matrix material 14-1 is an acrylic resin. Light included in a UV wavelength region ranging from 210 nm to 400 nm or overlapping with the UV wavelength region is transmitted by the matrix material 14-1.
“Light transmitting” with respect to the particles 14 means that at least part of the light emitted from the light-emitting element 13 is transmitted by the particles. The plurality of light transmitting particles 14-2 are embedded in the matrix material 14-1. The plurality of light transmitting particles 14-2 are dispersed in the matrix material 14-1.
The light transmitting particles 14-2 are made of an inorganic material. Therefore, degradation of the light transmitting particles 14-2 due to the primary light emitted from the light-emitting element 13 is reduced. An example of inorganic materials is ceramics. An example of ceramics is alumina.
The light transmitting particles 14-2 have a refractive index that is greater than that of the matrix material 14-1. At least part of the light in the wavelength region ranging from 210 nm to 500 nm is transmitted by the light transmitting particles 14-2. Especially, at least part of the light in the UV wavelength region ranging from 210 nm to 400 nm is transmitted by the light transmitting particles 14-2.
As shown in
Within the light transmitting particles 14-2, the light L13-1 is totally reflected when it enters the interface at an incident angle greater than a critical angle. Assuming that the refractive index of the matrix material is n14-1 and the refractive index of the light transmitting particles 14-2 is n14-2, the critical angle θ is represented by the following formula.
sin θ=n14-1/n14-2
The totally reflected light L13-1 attenuates gradually within the light transmitting particles 14-2. Thus, light entering between the base 11 and the frame member 12 attenuates gradually due to the light transmitting particles 14-2. In the light-emitting device 1, effect by the light emitted from the light-emitting element 13 and then entering between the base 11 and the frame member 12 is reduced.
Degradation of properties of the matrix material 14-1 by the light L13-1 is reduced, due to the fact that the light L13-1 attenuates within the light transmitting particles 14-2. An amount of light L13-1 leaking through a gap between the base 11 and the frame member 12 is reduced, due to the fact that the light L13-1 attenuates.
It is preferable that a difference in refractive index between the light transmitting particles 14-2 and the matrix material 14-1 is equal to or greater than 0.2. Then, an amount of the light L13-1 attenuating within the light transmitting particles 14-2 becomes larger. Therefore, light-emitting property of the light-emitting device 1 is further improved.
The sealing layer 15 is attached to the light-emitting element 13. The sealing layer 15 is made of a light transmitting material. “Light transmitting” with respect to the sealing layer 15 means that at least part of the light emitted from the light-emitting element 13 is transmitted by the sealing layer.
The sealing layer 15 has a refractive index that is smaller than that of the matrix material 14-1. Therefore, part of light traveling in a direction from the matrix material 14-1 to the sealing layer 15 is totally reflected at an interface between the matrix material 14-1 and the sealing layer 15. Therefore, possibility is lowered that light that is emitted from the light-emitting element 13 and then changed in its wavelength by the matrix material 14-1 travels into the sealing layer 15. Thus, the light-emitting device 1 is improved regarding the light-emitting property.
The light-emitting member 16 is disposed on or above the light-emitting element 13. The light-emitting member 16 contains a fluorescence material, which emits secondary light with use of primary light. The light-emitting member 16 converts the wavelength of the primary light. The secondary light has a wavelength spectrum that is larger than that of the primary light.
As shown in
In the base 11, it is preferable that a surface to which the intervening layer 14 is attached is porous. As shown in
In the frame member 12, it is preferable that a surface to which the intervening layer 14 is attached is porous. As shown in
The invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description and all changes which come within the meaning and the range of equivalency of the claims are therefore intended to be embraced therein.
Number | Date | Country | Kind |
---|---|---|---|
2007-116904 | Apr 2007 | JP | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
---|---|---|---|---|
PCT/JP2008/056216 | 3/28/2008 | WO | 00 | 2/12/2013 |
Publishing Document | Publishing Date | Country | Kind |
---|---|---|---|
WO2008/136230 | 11/13/2008 | WO | A |
Number | Name | Date | Kind |
---|---|---|---|
20090128912 | Okada et al. | May 2009 | A1 |
Number | Date | Country |
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2003-037292 | Feb 2003 | JP |
2004-296792 | Oct 2004 | JP |
2005-051194 | Feb 2005 | JP |
2006-303039 | Nov 2006 | JP |
2007-095998 | Apr 2007 | JP |
WO 2007032217 | Mar 2007 | WO |
Entry |
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Machine English translation of JP2006303039. |
Machine English translation of JP2004296792. |
Machine English translation of JP2006303039, electrically obtained from JPO on Jun. 12, 2014. |
Machine English translation of JP2004296792, electrically obtained from JPO on Jun. 12, 2014. |
Number | Date | Country | |
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20130175561 A1 | Jul 2013 | US |