1. Technical Field
The present disclosure generally relates to solid state light emitting devices and, more particularly, to a light emitting diode (LED) with high light extraction efficiency and a manufacturing method thereof.
2. Description of the Related Art
LEDs have many advantages, such as high luminosity, low operational voltage, low power consumption, compatibility with integrated circuits, easy driving, long term reliability, and environmental friendliness, which have promoted the wide use of LEDs as a light source.
Generally, an LED includes a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer arranged on the substrate in sequence. Part of light emitted from the active layer transmits to the substrate and is absorbed by the substrate; therefore, the light extraction efficiency of the LED is not as high as desired.
Therefore, what is needed is an LED and a manufacturing method thereof which can overcome the described limitations.
Referring to
The substrate 11 preferably is a monocrystal plate and made of sapphire. The substrate 11 includes a first surface 111 having a patterning structure. In the present embodiment, the patterning structure includes a plurality of projections 112 evenly formed on the first surface 111. A distance between each two adjacent projections 112 is 2 μm. Each projection 112 has a convex arc surface 113, and a diameter of the arc surface 113 is 3 μm. In the present embodiment, each of the convex arc surfaces 113 has a peak, and the peaks of the convex arc surfaces 113 are coplanar.
The buffer layer 12 is formed on the first surface 111 of the substrate 11 and covers the patterning structure.
The epitaxial structure 13 is grown on the buffer layer 12 by epitaxy. The buffer layer 12 is used to reduce the lattice mismatch between the substrate 11 and the epitaxial structure 13. The epitaxial structure 13 includes a first semiconductor layer 132, an active layer 133 and a second semiconductor layer 134 arranged on the buffer layer 12 in sequence. The first semiconductor layer 132 includes a second surface 131 attached to the active layer 133. In the present embodiment, a distance D between the peaks of the convex arc surfaces 113 and the second surface 131 of the first semiconductor layer 132 ranges from 0.5 to 2.5 μm. In the present embodiment, the first semiconductor layer 132 is an N-type nitride layer, and the second semiconductor layer 134 is a P-type nitride layer.
Referring to
Referring to
Step 1: referring to
Step 2: referring to
Step 3: referring to
Step 4: referring to
Step 5: referring to
The distance D between the peaks of the convex arc surfaces 113 and the second surface 131 of the first semiconductor layer 132 ranges from 0.5 to 2.5 μm, light emitted from the LED 10 can be reflected by the first surface 111 of the substrate 11 more effectively; therefore, the light extraction efficiency of the LED 10 can be improved.
It is to be further understood that even though numerous characteristics and advantages have been set forth in the foregoing description of embodiments, together with details of the structures and functions of the embodiments, the disclosure is illustrative only; and that changes may be made in detail, especially in matters of shape, size, and arrangement of parts within the principles of the disclosure to the full extent indicated by the broad general meaning of the terms in which the appended claims are expressed.
Number | Date | Country | Kind |
---|---|---|---|
2011 1 0443704 | Dec 2011 | CN | national |
Number | Name | Date | Kind |
---|---|---|---|
20110095327 | Shinohara et al. | Apr 2011 | A1 |
Number | Date | Country | |
---|---|---|---|
20130161652 A1 | Jun 2013 | US |