Patent Grant
11942568
This application claims priority of Chinese Invention Patent Application No. 201910722072.X, filed on Aug. 6, 2019.
The disclosure relates to a lighting device and a method of manufacturing the same, and more particularly to a light-emitting diode (LED) device and a method for manufacturing the same.
Referring to
However, the reflective layer 102 does not directly contact the ohmic contact element 105, and the adhesive layer 103 may have a resistance greater than that of the ohmic contact element 105 to result in an increase in series resistance, thereby causing the conventional LED device having a relatively high operating voltage.
Therefore, an object of the disclosure is to provide an LED device and a method for manufacturing an LED device that can alleviate at least one of the drawbacks of the prior art.
According to the disclosure, the LED device includes an epitaxial structure, a light transmittable dielectric element, an adhesive layer, and a metal contact element.
The epitaxial structure includes a first-type semiconductor unit that has a contact surface, an active layer that is disposed on the first-type semiconductor unit opposite to the contact surface, and a second-type semiconductor unit that is disposed on the active layer opposite to the first-type semiconductor unit and that has a light emitting surface opposite to the active layer.
The light transmittable dielectric element is disposed on the contact surface of the first-type semiconductor unit, and is formed with at least one first through hole to expose the contact surface of the first-type semiconductor unit.
The adhesive layer is disposed on a surface of the light transmittable dielectric element opposite to the first-type semiconductor unit, and is formed with at least one second through hole that is in spatial communication with and corresponds in position to the first through hole. The adhesive layer has a thickness that is at most one fifth of a thickness of the light transmittable dielectric element.
The metal contact element is disposed on a surface of the adhesive layer opposite to the light transmittable dielectric element, and extends into the first and second through holes and electrically contacts the contact surface of the first-type semiconductor unit.
According to the disclosure, the method includes steps 1) to 3). Step 1) is to provide an epitaxial structure that includes a first-type semiconductor unit having a contact surface, an active layer disposed on the first-type semiconductor unit opposite to the contact surface, and a second-type semiconductor unit disposed on the active layer opposite to the first-type semiconductor unit and having a light emitting surface opposite to the active layer.
Step 2) is to forma light transmittable dielectric element on the contact surface of the first-type semiconductor unit, and then to form an adhesive layer on a surface of the light transmittable dielectric element opposite to the first-type semiconductor unit. The light transmittable dielectric element is formed with at least one first through hole to expose the contact surface. The adhesive layer is formed with at least one second through hole that is in spatial communication with and corresponds in position to the first through hole, and has a thickness that is at most one fifth of a thickness of the light transmittable dielectric element.
Step 3) is to form a metal contact element on a surface of the adhesive layer opposite to the light transmittable dielectric element. The metal contact element extends into the first and second through holes and electrically contacts the contact surface of the first-type semiconductor unit.
Other features and advantages of the disclosure will become apparent in the following detailed description of the embodiment(s) with reference to the accompanying drawings, of which:
Before the disclosure is described in greater detail, it should be noted that where considered appropriate, reference numerals or terminal portions of reference numerals have been repeated among the figures to indicate corresponding or analogous elements, which may optionally have similar characteristics.
Referring to
The epitaxial structure includes a first-type semiconductor unit 206, an active layer 207, and a second-type semiconductor unit 208. The first-type semiconductor unit 206 has a contact surface 21. The active layer 207 is disposed on the first-type semiconductor unit 206 opposite to the contact surface 21. The second-type semiconductor unit 208 is disposed on the active layer 207 opposite to the first-type semiconductor unit 206 and has alight emitting surface 20 opposite to the active layer 207. The light emitting surface 20 of the second-type semiconductor unit 208 may be roughened to enhance the light extraction efficiency.
As used herein, the term “first-type” refers to being doped with a first type dopant, and the term “second-type” refers to being doped with a second type dopant that is opposite in conductivity to the first type dopant. For instance, the first type dopant may be a p-type dopant, and the second type dopant may be an n-type dopant, and vice versa.
In this embodiment, the first-type semiconductor unit 206 is a p-type semiconductor unit, and the second-type semiconductor unit 208 is an n-type semiconductor unit. The p-type semiconductor unit may include a covering layer made of aluminum indium phosphide (AlInP)-based material, and a current spreading layer disposed on the covering layer and made of gallium nitride (GaN)-based material (not shown in the figures). The n-type semiconductor unit may include a covering layer made of aluminum indium phosphide (AlInP)-based material, and a current spreading layer disposed on the covering layer opposite to the active layer 207 and made of aluminum gallium indium nitride (AlGaInN)-based material (not shown in the figures).
The active layer 207 may be one of an intrinsic semiconductor layer, a p-type semiconductor layer and an n-type semiconductor layer, and may be excited by an electrical current passing through the epitaxial structure to emit light. The active layer 207, when made of nitride-based material, is configured to emit blue or green light. The active layer 207, when made of AlGaInN-based material, is configured to emit red, orange or yellow light. The active layer 207, when made of aluminum gallium arsenide (AlGaAs)-based material, is configured to emit infrared light. In this embodiment, the active layer 207 is made of AlGaInN-based material.
The light transmittable dielectric element 205 is disposed on the contact surface 21 of the first-type semiconductor unit 206, and is formed with at least one first through hole 22 to expose the contact surface 21 of the first-type semiconductor unit 206. The light transmittable dielectric element 205 may include at least one layer made of an insulating material having high resistance. Examples of the insulating material may include, but are not limited to, a fluoride compound (such as magnesium fluoride (MgF2)), an oxide compound (such as silicone oxide, zinc oxide), a nitride compound (such as silicon nitride), and combinations thereof.
In addition, the light transmittable dielectric element 205 is capable of reflecting light from the active layer 207 back toward the light emitting surface 20 or a lateral surface of the epitaxial structure to emit light outside the LED device. Therefore, the light transmittable dielectric element 205 may have a refractive index lower than that of the epitaxial structure, so as to increase the amount of light reflected by the light transmittable dielectric element 205. In certain embodiments, the refractive index of the light transmittable dielectric element 205 is not greater than 1.5 (e.g., not greater than 1.4). The light transmittable dielectric element 205 may exhibit a light transmittance of at least 60%, 70%, 80% or 90%.
The light transmittable dielectric element 205 may be a single-layer structure, or may be a multi-layered structure that may be made of the same insulating material or at least two different insulating materials as mentioned above which have different refractive indices. For example, the light transmittable dielectric element 205, when in the form of the multi-layered structure, may include multiple pairs of dielectric layers, each of which including a first dielectric layer and a second dielectric layer that are made of different insulating materials. The first dielectric layers and the second dielectric layers in the light transmittable dielectric element 205 are alternately-stacked.
The light transmittable dielectric element 205 may have a thickness that is equal to or greater than 50 nm (such as 50 nm to 500 nm). In certain embodiments, the light transmittable dielectric element 205 has a thickness ranging from 50 nm to 150 nm (such as 100 nm to 150 nm). The light transmittable dielectric element 205 may have an optical thickness that is equal to an integer multiple of one-quarter of the emitting wavelength (i.e., λ/4) of the active layer 207.
The light transmittable dielectric element 205 has at least one hole-defining wall 1 that defines the first through hole 22. The hole-defining wall 1 may angularly extend away from the contact surface 21 at an angle that is equal to or greater than 90°, and that is not greater than 180°. The cross section of the hole-defining wall 1 may be in a shape of circle, oval, polygon, etc. In this embodiment, the light transmittable dielectric element 205 is formed with a plurality of the first through holes 22, each of which independently has a width ranging from 2 μm to 10 μm. Each of the hole-defining walls 1 perpendicularly extends from the contact surface 21, i.e., the first through hole 22 has a consistent width along the hole-defining wall 1.
Alternatively, in a variation of the first embodiment, the hole-defining wall 1 of each of the first through holes 22 angularly extends away from the contact surface 21 at an angle ranging from 110° to 170° (see
The adhesive layer 204 is disposed on a surface of the light transmittable dielectric element 205 opposite to the first-type semiconductor unit 206. The adhesive layer 204 is formed with at least one second through hole 23 that is in spatial communication with and corresponds in position to the first through hole 22. It should be noted that a width of the second through hole 23 is not restricted to that of the first through hole 22. In this embodiments, the width of the second through hole 23 is equal to (or may be greater than) the largest width of the first through hole 22. That is, the second through hole 23 may be configured to expose the hole-defining wall 1 of the light transmittable dielectric element 205 and the contact surface 21.
Alternatively, the width of the second through hole 23 is smaller than the width of the first through hole 23. That is, the adhesive layer 204 extends into the first through hole 22 to cover at least a portion of the hole-defining wall 1 of the light transmittable dielectric element 205 or the entire hole-defining wall 1 so as to contact the contact surface 21 (see
The adhesive layer 204, which is required to have a desired adhesion between the light transmittable dielectric element 205 and the metal contact element 203, is made of a transparent electrically conductive material. Examples of the transparent electrically conductive material may include, but are not limited to, indium zinc oxide (IZO), indium tin oxide (ITO), and the combination thereof. The adhesive layer 204 may have a refractive index greater than that of the light transmittable dielectric element 205. In addition, the adhesive layer 204 may exhibit a light transmittance lower than that of the light transmittable dielectric element 205.
In certain embodiments, the adhesive layer 204 has a thickness that is at most one fifth of a thickness of the light transmittable dielectric element. For example, the adhesive layer 204 may have a thickness that is equal to or less than 10 nm, such as 0.1 nm to 10 nm, 1 nm to 5 nm or 5 nm to 10 nm. When the thickness is greater than 10 nm, the light absorption of the adhesive layer 204 becomes a serious problem. When the thickness is lower than 0.1 nm, the adhesive layer 204 exhibits poor adhesion. The adhesive layer 204 may be in a form of continuous layer, or may consist of a plurality of spaced apart discrete regions when the adhesive layer 204 becomes thinner (e.g. having a thickness ranging from 0.5 nm to 2 nm).
The metal contact element 203 is disposed on a surface of the adhesive layer 204 opposite to the light transmittable dielectric element 205, and extends into and fills the first and second through holes 22, 23 and electrically contacts the contact surface 21 of the first-type semiconductor unit 206. The metal contact element 203 may include at least one metal layer. When a plurality of the metal layers are applied, the metal layers are stacked on one another on the surface of the adhesive layer 204 to form the metal contact element 203.
The metal contact element 203 may include an ohmic contact part 24 that is disposed in the first through hole 22 to electrically contact the first-type semiconductor unit 206, and a reflective part 25 that is disposed on the ohmic contact part 24 and that covers the adhesive layer 204. As compared to the conventional LED device shown in
The ohmic contact part 24 of the metal contact element 203 may be made of an alloy material, such as AuZn, AuGe, AuGeNi, AuBe, AuNi, etc. The reflective part 25 may be made of a reflective metal material, such as gold, silver, and the combination thereof. The reflective part 25 may have a reflectance not less than that of the ohmic contact part 24.
The LED device of this disclosure may further include a first electrode 201 that is disposed on and electrically connects to the metal contact element 203 (e.g., through a bonding substrate 202 with electrical conductivity), and a second electrode 209 that is disposed on and electrically connects to the second-type semiconductor unit 208 (see
In certain embodiments, the LED device may further include a bonding layer (not shown in the figures) that is disposed between the reflective part 25 and the bonding substrate 202 to bond the epitaxial structure to the bonding substrate 202. The bonding layer may be Au—Au bonding layer, Au—In bonding layer, etc.
In addition, the LED device may further include a blocking layer (not shown in the figures) disposed between the bonding layer and the reflective part 25 to prevent the metal(s) (such as silver) of the ohmic contact part 24 and/or of the reflective part 25 from diffusing toward the bonding layer. The blocking layer may be made of Au, Ti, Pt, Cr, and combinations thereof. The blocking layer may be a laminated structure containing a Ti sublayer and a Pt sublayer.
For obtaining an improved ohmic contact between the second electrode 209 and the second-type semiconductor unit 208, the second-type semiconductor unit 208 may further include an ohmic contact layer (such as n-type ohmic contact layer made of gallium arsenide-based material) disposed on the window layer opposite to the active layer 207, and the second electrode 209 is disposed on the ohmic contact layer.
In the first embodiment, the light transmittable dielectric element 205 is made of MgF2, and has a thickness ranging from 100 nm to 150 nm, a relatively low refractive index of 1.38 and a relatively high thermal conductivity ranging from 14 W/mK to 15 W/mK. The adhesive layer 204 is made of IZO by a sputtering process, and has a thickness ranging from 0.1 nm to 10 nm. The metal contact element 203 includes the ohmic contact part 24 that is made of AuZn, the reflective part 25 that is made of Au or mainly made of Au (e.g., may have a certain content of Zn from the ohmic contact part 24 due to diffusion phenomena). In addition to the alloy material of the ohmic contact part 24, the light transmittable dielectric element 205 and the reflective part 25 cooperatively form an omni-directional reflector (ODR), which may greatly improve the light output (LOP) of the LED device.
Alternatively, in certain embodiments, the light transmittable dielectric element 205 is made of silicon oxide, and the adhesive layer 204 is made of IZO and has a thickness ranging from 0.1 nm to 10 nm.
Referring to
In step S1, referring to
In step S2, referring to
To be specific, referring to
In substep S21, referring to
In substep S22, referring to
Since IZO has a relatively high reactivity, the adhesive layer 204 is prone to be easily removed together with the sacrificial unit 301 in a subsequent removal process (such as etching process), particularly when the adhesive layer 204 has a thinner thickness. Therefore, referring to
In substep S23, referring to
In certain embodiments, the substep S23 is conducted using an etching solution which selectively etches the sacrificial unit 301, and does not etch the adhesive layer 204 and the light transmittable dielectric element 205 formed on the first-type semiconductor unit 206.
Referring to
As shown in
The first and second sacrificial elements 3011, 3012 may be prepared as follows. First and second sacrificial layers that are made of etchable materials having different etching rates are sequentially formed on the first-type semiconductor unit 206 via a deposition process. Then, the first and second sacrificial layers are subjected to an etching process using an etching solution, so as to obtain the first sacrificial element 3011 and the the second sacrificial element 3012 which has a diameter larger than that of the first sacrificial element 3011. The etching solution is used to etch the material of the first sacrificial element 3011 at a first etching rate and etch the material of the second sacrificial element 3012 at a second etching rate, the first etching rate being higher than the second etching rate.
For example, the first sacrificial layer made of silicon oxide is formed on the first-type semiconductor unit 206, and then the second sacrificial layer made of silicon oxide is formed on the first sacrificial element 3011 under a temperature higher than that for the first sacrificial layer, such that the compactness of the second sacrificial layer is greater than the first sacrificial layer (i.e., the etching rate of the second sacrificial layer is higher). Next, the second sacrificial layer is covered with a photomask, and then the first and second sacrificial layers are etched with a buffered oxide etch (BOE) solution, so as to obtain the first sacrificial element 3011 having a diameter smaller than that of the second sacrificial element 3012.
Referring to
Afterward, the adhesive layer 204 and the metallic protective layer 302 (if present) are formed as a discontinuous layer in a shape similar to the light transmittable dielectric element 205. That is, the adhesive layer 204 covers the light transmittable dielectric element 205, and has an inclined surface extending away from the contact surface 21 and is formed with a gap that is defined between the first sacrificial element 3011 and the inclined surface of the adhesive layer 204 and that corresponds in position to the second through hole 23 to be formed in the subsequent substep S23. The metallic protective layer 302 covers the adhesive layer 204, and has an inclined surface extending away from the contact surface 21 and is formed with a gap that is defined between the first sacrificial element 3011 and the inclined surface of the metallic protective layer 302 and that corresponds in position to the third through hole 31 to be formed in the subsequent substep S23.
Referring to
The thus obtained semi-product from step S2 has a structural configuration shown in
In step S3, referring to
To be specific, an ohmic contact layer, which may be made of AuZn, AuGe, AuNi, AuBe, AuNi, etc., and a reflective layer, which may be made of the same material as the metallic protective layer 302, are subsequently formed on the metallic protective layer 302 and fills the first and second through holes 22, 23.
Alternatively, the ohmic contact layer and the reflective layer are directly formed on the metallic protective layer 302. Thereafter, the ohmic contact layer, the reflective layer and the metallic protective layer 302 are subjected to a heating treatment, such that the diffusible metal present in the ohmic contact layer (such as Zn, Ge, AuNi, Be, Ni, etc.) is diffused to be proximate to the contact surface 21 to form ohmic contact (i.e., the ohmic contact part 24). The metallic protective layer 302 and the reflective layer made of the same metal material cooperatively form a part of the metal contact element 203 (i.e., the reflective part 25). That is, the metallic protective layer 302 can function as the reflective part 25 to reflect light from the light transmittable dielectric element 205.
In step S4, referring to
In step S5, referring to
Referring to
To be specific, in the second embodiment, the epitaxial structure is formed with at least one recess 210 which is defined by a recess-defining surface 211 extending from the first-type semiconductor unit 206 to the second-type semiconductor unit 208. The recess 210 may have a width of at least 1 μm, and may have a cross-sectional area ranging from 1% to 20% based on a total area of the contact surface 21.
The light transmittable dielectric element 205 and the adhesive layer 204 are disposed at least on the contact surface 21. The light transmittable dielectric element 205 may further extends into the recess 210 along the recess-defining surface 211 to cover the recess-defining surface 211, and a surface of the second-type semiconductor unit 208 opposite to the light emitting surface 20 is exposed therefrom.
The metal contact element 203 includes the ohmic contact part 24 that extends into the first and second through holes 22, 23 and electrically contacts the contact surface 21, and the reflective part 25 that is disposed on the ohmic contact part 24 and covers the adhesive layer 204. The metal contact element 203 may further include the metal blocking layer disposed on the reflective part 25 (not shown in the figures).
In addition, the second embodiment of the LED device may further include an insulating layer 303 disposed on metal contact element 203. The insulating layer 303 may be made of silicon oxide, silicon nitride or a fluoride compound.
The second embodiment may further include a metal covering film 304 that is disposed on the insulating layer 303, extends into and fills the recess 210, and electrically contacts the second-type semiconductor unit 208. The bonding substrate 202 may be made of a non-conductive material or an electrically conductive material. In certain embodiments, the bonding layer (not shown in the figures) may be further interposed between the bonding substrate 202 and the metal covering film 304 to bond therebetween. The metal contact element 203 may be configured to prevent the metal(s) (such as silver) of the reflective part 25 from diffusing toward the the the bonding layer.
The first electrode 201 is disposed on a surface of the metal contact element 203 opposite to the insulating layer 303. The second electrode 209 is disposed on a surface of the metal covering film 304 opposite to the bonding substrate 202. The first and second electrodes 201, 209 are located at the same side of the epitaxial structure opposite to the light emitting surface 20 for electrically connecting to an external electrical component (not shown in the figures).
Referring to
In summary, by virtue of the adhesive layer 204 formed with the second through hole(s) 23 that is in spatial communication with and corresponds in position to the first through hole(s) 22 of the light transmittable dielectric element 25, the metal contact element 23, which is disposed on the adhesive layer 204, can further extend into the first and second through holes 22, 23 and electrically contact the contact surface 21 of the first-type semiconductor unit 206, such that the LED device of this disclosure can be operated under a relatively low operating voltage as compared to the conventional device as shown in
In the description above, for the purposes of explanation, numerous specific details have been set forth in order to provide a thorough understanding of the embodiments. It will be apparent, however, to one skilled in the art, that one or more other embodiments may be practiced without some of these specific details. It should also be appreciated that reference throughout this specification to “one embodiment,” “an embodiment,” an embodiment with an indication of an ordinal number and so forth means that a particular feature, structure, or characteristic may be included in the practice of the disclosure. It should be further appreciated that in the description, various features are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of various inventive aspects, and that one or more features or specific details from one embodiment may be practiced together with one or more features or specific details from another embodiment, where appropriate, in the practice of the disclosure.
While the disclosure has been described in connection with what are considered the exemplary embodiments, it is understood that this disclosure is not limited to the disclosed embodiment(s) but is intended to cover various arrangements included within the spirit and scope of the broadest interpretation so as to encompass all such modifications and equivalent arrangements.
| Number | Date | Country | Kind |
|---|---|---|---|
| 201910722072.X | Aug 2019 | CN | national |
| Number | Name | Date | Kind |
|---|---|---|---|
| 10305003 | Hwang | May 2019 | B2 |
| 10333025 | Park | Jun 2019 | B1 |
| 20120193785 | Lin | Aug 2012 | A1 |
| 20160172528 | Okushiba | Jun 2016 | A1 |
| 20180287021 | Chae | Oct 2018 | A1 |
| 20190214373 | Kim | Jul 2019 | A1 |
| 20190334061 | Yoon | Oct 2019 | A1 |
| 20200295229 | Kim | Sep 2020 | A1 |
| Number | Date | Country |
|---|---|---|
| 101937960 | Aug 2012 | CN |
| 108258097 | Jul 2018 | CN |
| 2012114130 | Jun 2012 | JP |
| Entry |
|---|
| Search Report for Chinese Application No. 201910722072.X (priority application), mailed by the CNIPA dated Apr. 29, 2020 (English translation included). |
| Search Report appended to an Office Action, which was issued to Chinese counterpart application No. 202110171687.5 by the CNIPA dated May 2022, with an English translation thereof. |
| Search Report appended to an Office Action, which was issued to Chinese counterpart application No. 202110171687.5 by the CNIPA dated Sep. 29, 2021 with an English translation thereof. |
| Number | Date | Country | |
|---|---|---|---|
| 20210043798 A1 | Feb 2021 | US |
