TREA

Light emitting diode device

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Information

  • Patent Grant
  • D826871
  • Patent Number
    D826,871
  • Date Filed
    Thursday, December 11, 2014
    11 years ago
  • Date Issued
    Tuesday, August 28, 2018
    8 years ago
  • US Classifications
    Field of Search
    • US
    • D13 180
    • D26 1
    • CPC
    • H01L25/167
    • H01L25/0753
    • H01L27/15
    • H01L27/156
    • H01L31/02
    • H01L33/00
    • H01L33/04
    • H01L33/08
    • H01L33/10
    • H01L33/20
    • H01L33/38
    • H01L33/42
    • H01L33/48
    • H01L33/62
    • H01L33/483
    • H01L33/486
    • F21K9/00
    • F21K9/30
    • F21K9/54
  • International Classifications
    • 1303
    • Term of Grant
      14Years
Information
Abstract
Description


FIG. 1 is a bottom perspective view of a light emitting diode device according to an embodiment of the present invention.



FIG. 2 is a top view of the light emitting diode device shown in FIG. 1.



FIG. 3 is a bottom view of the light emitting diode device shown in FIG. 1.



FIG. 4 is a front elevation view of the light emitting diode device shown in FIG. 1.



FIG. 5 is a right side elevation view of the light emitting diode device shown in FIG. 1.



FIG. 6 is a back elevation view of the light emitting diode device shown in FIG. 1.



FIG. 7 is a left side elevation view of the light emitting diode device shown in FIG. 1.



FIG. 8 is a bottom perspective view of a light emitting diode device according to an embodiment of the present invention.



FIG. 9 is a top view of the light emitting diode device shown in FIG. 8.



FIG. 10 is a bottom view of the light emitting diode device shown in FIG. 8.



FIG. 11 is a front elevation view of the light emitting diode device shown in FIG. 8.



FIG. 12 is a right side elevation view of the light emitting diode device shown in FIG. 8.



FIG. 13 is a back elevation view of the light emitting diode device shown in FIG. 8.



FIG. 14 is a left side elevation view of the light emitting diode device shown in FIG. 8.



FIG. 15 is a bottom perspective view of a light emitting diode device according an embodiment of to the present invention.



FIG. 16 is a top view of the light emitting diode device shown in FIG. 15.



FIG. 17 is a bottom view of the light emitting diode device shown in FIG. 15.



FIG. 18 is a front elevation view of the light emitting diode device shown in FIG. 15.



FIG. 19 is a right side elevation view of the light emitting diode device shown in FIG. 15.



FIG. 20 is a back elevation view of the light emitting diode device shown in FIG. 15.



FIG. 21 is a left side elevation view of the light emitting diode device shown in FIG. 15.



FIG. 22 is a bottom perspective view of a light emitting diode device according to an embodiment of the present invention.



FIG. 23 is a top view of the light emitting diode device shown in FIG. 22.



FIG. 24 is a bottom view of the light emitting diode device shown in FIG. 22.



FIG. 25 is a front elevation view of the light emitting diode device shown in FIG. 22.



FIG. 26 is a right side elevation view of the light emitting diode device shown in FIG. 22.



FIG. 27 is a back elevation view of the light emitting diode device shown in FIG. 22.



FIG. 28 is a left side elevation view of the light emitting diode device shown in FIG. 22.



FIG. 29 is a bottom perspective view of a light emitting diode device according to an embodiment of the present invention.



FIG. 30 is a top view of the light emitting diode device shown in FIG. 29.



FIG. 31 is a bottom view of the light emitting diode device shown in FIG. 29.



FIG. 32 is a front elevation view of the light emitting diode device shown in FIG. 29.



FIG. 33 is a right side elevation view of the light emitting diode device shown in FIG. 29.



FIG. 34 is a back elevation view of the light emitting diode device shown in FIG. 29.



FIG. 35 is a left side elevation view of the light emitting diode device shown in FIG. 29.



FIG. 36 is a bottom perspective view of a light emitting diode device according to an embodiment of the present invention.



FIG. 37 is a top view of the light emitting diode device shown in FIG. 36.



FIG. 38 is a bottom view of the light emitting diode device shown in FIG. 36.



FIG. 39 is a front elevation view of the light emitting diode device shown in FIG. 36.



FIG. 40 is a right side elevation view of the light emitting diode device shown in FIG. 36.



FIG. 41 is a back elevation view of the light emitting diode device shown in FIG. 36; and,



FIG. 42 is a left side elevation view of the light emitting diode device shown in FIG. 36.


The broken lines of FIGS. 1-42 illustrate portions of the various embodiments of the light emitting diode device which form no part of the claimed design.


Claims
  • The ornamental design for light emitting diode device, as shown and described herein.
US Referenced Citations (122)
Number Name Date Kind
4214251 Schairer Jul 1980 A
4824767 Chambers et al. Apr 1989 A
5334865 Fathimulla et al. Aug 1994 A
5500381 Yoshida et al. Mar 1996 A
5563079 Shin et al. Oct 1996 A
5712175 Yoshida Jan 1998 A
5990531 Taskar et al. Nov 1999 A
6197609 Tsutsui et al. Mar 2001 B1
6375340 Biebl Apr 2002 B1
6380564 Chen Apr 2002 B1
6395572 Tsutsui et al. May 2002 B1
6410942 Thibeault et al. Jun 2002 B1
6462358 Lin et al. Oct 2002 B1
6480389 Shie Nov 2002 B1
6486499 Krames et al. Nov 2002 B1
6489637 Sakamoto Dec 2002 B1
6495862 Okazaki et al. Dec 2002 B1
6586813 Nagahara Jul 2003 B2
6614172 Chiu et al. Sep 2003 B2
6642652 Collins et al. Nov 2003 B2
6646292 Steigerwald et al. Nov 2003 B2
6657236 Thibeault et al. Dec 2003 B1
6741029 Matsubara May 2004 B2
6784462 Schubert Aug 2004 B2
6791259 Stokes Sep 2004 B1
6828596 Steigerwald et al. Dec 2004 B2
6869812 Liu Mar 2005 B1
6885036 Tarsa et al. Apr 2005 B2
6888171 Liu et al. May 2005 B2
6946309 Camras et al. Sep 2005 B2
6953255 Horiuchi Oct 2005 B2
7049639 Wang May 2006 B2
7141825 Horio et al. Nov 2006 B2
7154125 Koide et al. Dec 2006 B2
7348212 Schiaffino et al. Mar 2008 B2
7439166 Milosavljevic et al. Oct 2008 B1
7608497 Milosavljevic et al. Oct 2009 B1
7622742 Kim et al. Nov 2009 B2
7622746 Lester et al. Nov 2009 B1
7648849 Lee et al. Jan 2010 B2
7709282 Fukshima et al. May 2010 B2
7781791 Sakai et al. Aug 2010 B2
D631020 Chuang Jan 2011 S
D646235 Kuwaharada Oct 2011 S
D646643 Wu Oct 2011 S
D658139 Andrews Apr 2012 S
D660257 Andrews May 2012 S
8212273 McKenzie et al. Jul 2012 B2
D675169 Chou Jan 2013 S
8368100 Donofrio Feb 2013 B2
D691973 Donofrio Oct 2013 S
D693781 Kobayashi Nov 2013 S
D694201 Iino Nov 2013 S
D698323 Noichi Jan 2014 S
D709464 Abare Jul 2014 S
D710810 Noichi Aug 2014 S
D713804 Britt Sep 2014 S
8835959 Nakamura Sep 2014 B2
D718725 Reiherzer Dec 2014 S
D741821 Song Oct 2015 S
D746240 Bergmann Dec 2015 S
9638852 Sakai May 2017 B2
D790486 Reiherzer Jun 2017 S
D800679 Omori Oct 2017 S
20020017648 Kasahara et al. Feb 2002 A1
20020180351 McNulty Dec 2002 A1
20030102484 Hata Apr 2003 A1
20030218183 Micovic et al. Nov 2003 A1
20030227250 Nee Dec 2003 A1
20040016936 Tanaka et al. Jan 2004 A1
20040135166 Yamada Jul 2004 A1
20040183081 Shishov Sep 2004 A1
20040217364 Tarsa et al. Nov 2004 A1
20040227149 Ibbetson Nov 2004 A1
20050082562 Ou et al. Apr 2005 A1
20050147923 Sawada Jul 2005 A1
20050159009 Makiyama et al. Jul 2005 A1
20050211989 Horio et al. Sep 2005 A1
20050224821 Sakano Oct 2005 A1
20050242364 Moustakas Nov 2005 A1
20050258431 Smith et al. Nov 2005 A1
20050258450 Saxler Nov 2005 A1
20050258451 Saxler et al. Nov 2005 A1
20060006414 Germain et al. Jan 2006 A1
20060054907 Lai Mar 2006 A1
20060063289 Negley Mar 2006 A1
20060081869 Lu et al. Apr 2006 A1
20060091405 Kwak May 2006 A1
20060108606 Saxler et al. May 2006 A1
20060244005 Chen Nov 2006 A1
20060273332 Kang Dec 2006 A1
20060273333 Wu et al. Dec 2006 A1
20060273335 Asahara Dec 2006 A1
20070018182 Beeson et al. Jan 2007 A1
20070018184 Beeson et al. Jan 2007 A1
20070063215 Shinichi et al. Mar 2007 A1
20070102715 Ko et al. May 2007 A1
20070111473 Furukawa et al. May 2007 A1
20070145380 Shum et al. Jun 2007 A1
20070145392 Haberern Jun 2007 A1
20070200493 Hsu Aug 2007 A1
20070202624 Yoon et al. Aug 2007 A1
20070262338 Higashi et al. Nov 2007 A1
20080064133 Lee et al. Mar 2008 A1
20080157115 Chuang et al. Jul 2008 A1
20080182369 Jeong et al. Jul 2008 A1
20080203541 Makiyama Aug 2008 A1
20080217635 Emerson et al. Sep 2008 A1
20080241757 Xu et al. Oct 2008 A1
20080251858 Ahn et al. Oct 2008 A1
20080258161 Edmond Oct 2008 A1
20080274431 Nozaki et al. Nov 2008 A1
20080290364 Kamiya et al. Nov 2008 A1
20080308322 Hsieh et al. Dec 2008 A1
20090039359 Yoon Feb 2009 A1
20090050907 Yuan Feb 2009 A1
20090108281 Keller Apr 2009 A1
20090140272 Beeson et al. Jun 2009 A1
20090283787 Donofrio et al. Nov 2009 A1
20110163347 Hasnain Jul 2011 A1
20130105835 Wu May 2013 A1
20130328074 Lowes Dec 2013 A1
Foreign Referenced Citations (53)
Number Date Country
1816917 Sep 2006 CN
102007019776 Oct 2008 DE
102007046743 Apr 2009 DE
57042179 Mar 1982 JP
4284620 Oct 1992 JP
0811544 Apr 1996 JP
08111544 Apr 1996 JP
9129532 May 1997 JP
09153646 Jun 1997 JP
09008403 Oct 1997 JP
10189649 Jul 1998 JP
11150298 Jun 1999 JP
H11220218 Aug 1999 JP
2000311704 Jul 2000 JP
2001308380 Nov 2001 JP
02299699 Oct 2002 JP
2002353499 Dec 2002 JP
2003017757 Jan 2003 JP
03124522 Apr 2003 JP
2003347589 Dec 2003 JP
200447988 Feb 2004 JP
2004047988 Feb 2004 JP
3105430 Oct 2004 JP
2004047988 Dec 2004 JP
200517289 Jul 2005 JP
2005244152 Sep 2005 JP
2005123489 Dec 2005 JP
2006128727 May 2006 JP
2006216933 Aug 2006 JP
2006313888 Nov 2006 JP
2007073965 Mar 2007 JP
2007511065 Apr 2007 JP
2007527123 Sep 2007 JP
200731704 Nov 2007 JP
WO2008038842 Apr 2008 JP
2008112957 May 2008 JP
2008112957 May 2008 JP
2008192782 Aug 2008 JP
2008205005 Sep 2008 JP
2008288548 Nov 2008 JP
2008288548 Nov 2008 JP
2009049342 Mar 2009 JP
200988299 Apr 2009 JP
564584 Dec 2003 TW
200627674 Aug 2006 TW
200627675 Aug 2006 TW
WO 8300408 Feb 1983 WO
WO 2006006555 Jan 2006 WO
WO 07136391 Nov 2007 WO
WO 07136392 Nov 2007 WO
WO 07141763 Dec 2007 WO
WO 2007141763 Dec 2007 WO
WO 09039805 Apr 2009 WO
Non-Patent Literature Citations (64)
Entry
Examination Pretrial Report for Japanese Application No. 2015-130167; dated Jul. 28, 2017.
Office Action from U.S. Appl. No. 11/738,171, dated Sep. 14, 2015.
Office Action from U.S. Appl. No. 14/159,209, dated Nov. 17, 2015.
Certificate of Patent for Invention from Chinese Patent Appl. No. ZL200880020777.7, dated Aug. 5, 2015.
Foreign OA European Application No. 08745097.9 1551; Dated Mar. 14, 2017.
Steigerwald, Daniel A., et al; A GaInN Flip Chip Light Emitting Device Having High Reflectance OHMIC Contact; Nov. 22, 2002; Japanese Application No. 2002-33014.
Office Action for Application No. 2015-130167; Dated Mar. 9, 2016.
Trial Decision from Japanese Patent Appl. No. 2012-510802, dated Jul. 21, 2015.
Notification of the Fifth Office Action from Chinese Patent Appl. No 200880020777.7. dated Jan. 21, 2015.
Allowance Decision from Taiwanew Patent Appl. No. 097114378, dated Sep. 5, 2014.
Pretrial Report from Japanese Patent Appl. No. 2012-510802, dated Jul. 2, 2014..
Office Action from U.S. Appl. No. 11/904,054, dated May 2, 2014.
Office Action from Taiwanese Patent Appl. No. 097114378. dated May 12, 2014.
Second Office Action from Chinese Patent Appl. No 201080026730.9 dated Apr. 9, 2014.
Decision of Dismissal of Amendment from Japanese Patent Appl. No. 2012-510802. dated Feb. 18, 2014.
First Office Action from Chinese Patent Appl. No. 201080026730.9, dated Oct. 23, 2013.
Notice of Reasons for Rejection from Japanese Patent Application 2010-54010, dated Jun. 26, 2012.
Rejection Decision from Chinese Patent Appl. No. 200680020777.7, dated Jul. 3, 2013.
Interrogatory from Japanese Patent Appl. No 2010-504160, dated Jul. 16, 2013.
Preliminary Examination Report from Japanese Patent Appl. No. 2010-504160, dated Jun. 25, 2013.
Notice of Reasons for Rejection from Japanese Patent Application No. 2012-510802, dated May 21, 2013.
Interrogation from Japanese Patent Application No. 2009-132243, dated Apr. 23, 2013.
Fourth Office Action from Chinese Patent Appl. No. 200380020777.7, dated Feb 17, 2013.
Decision of Rejection from Japanese Patent Application No. 2009-132243, dated Oct. 2, 2012.
Office Action from U.S. Appl. No. 11/904,064, dated Jul. 26, 2012.
Response to OA from U.S. Appl. No. 11/904,064. filed Jan. 28, 2013.
Office Action from U.S. Appl. No. 12/432,478, dated Jun. 20, 2012.
Response to OA from U.S. Appl. No. 12/432,478, dated Aug. 17, 2012.
Office Action from U.S. Appl. No. 12/185,031, dated Jun. 12, 2012.
Response to OA from U.S. Appl. No. 12/185,031, filed Aug. 24, 2012.
Office Action from U.S. Appl. No. 11/904,064, dated Feb. 25, 2013.
Response to OA from U.S. Appl. No. 11/904,064, filed May 24, 2013.
Office Action from U.S. Appl. No. 11/904,064, dated Jun. 12, 2013.
Response to OA from U.S. Appl. No. 11/904,064, filed Aug. 20, 2013.
Office Action from U.S. Appl. No. 13/023,788, dated Mar. 12, 2013.
Response to OA from U.S. Appl. No. 13/023,788, filed Jun. 11, 2013.
Office Action from U.S. Appl. No. 11/738,171, dated Jun. 27, 2013.
Office Action from U.S. Appl. No. 12/432,478, dated Jul. 1, 2013.
Office Action from U.S. Appl. No. 13/023,788, dated Jul. 2, 2013.
Extended European Search Report for European Patent Application No. 10185708.4, dated Dec. 2, 2010.
International Search and Written Opinion for PCT application No. PCT/US2010/024980, dated Oct. 6, 2010.
U.S. Appl. No. 12/463,709, filed May 11, 2009, entitled Semiconductor Light Emitting Diodes Having Reflective Structures and Methods of Fabricating Same.
U.S. Appl. No. 11/985,410, filed Nov. 14, 2007, Wire Bond Free Wafer Level LED.
U.S. Appl. No. 12/329,713, filed Dec. 8, 2008, Light Emitting Diode With Improved Light Extraction.
Huang et al. “High-Performance GaN-Based Vertical-Injection Light-Emitting diodes with TiO2-SiO2 Omnidirectional Reflector and n-GaN Roughness” IEEE Photonics Technology Letters. 19(8) 565-567 (2007).
Official Notice of Rejection for Japanese Patent Application No. 2006-513442, dated Jun. 8, 2010.
Office Action for Korean Patent Application No. 10-2005-7020463, dated Dec. 21, 2010.
Grundbacher et al., “Utilization of an Electron Beam Resist Process to Examine the Effects of Asymmetric Gate Recess on the Device Characteristics of AlGaAs/InGaAs PHEMT's,” IEEE, vol. 44. No. 12, Dec. 1997.
Office Action from U.S. Appl. No. 12/012,376, dated Jul. 8, 2010.
Office Action from U.S. Appl. No. 12/012,376, dated Dec. 3, 2010.
Office Action from U.S. Appl. No. 12/432,478, dated Nov. 17, 2010.
Office Action from U.S. Appl. No. 11/904,064, dated Apr. 22, 2011.
Office Action from U.S. Appl. No. 12/432,478, dated May 16, 2011.
Office Action from U.S. Appl. No. 12/165,031, dated Jun. 14, 2011.
Notice of Reasons for Rejection from Japanose Patent Appl. No. 2009-132243, dated Oct. 1, 2013.
Office Action from Japanese Patent Appl. No. 2012-510802, dated Oct. 8, 2013.
Office Action from U.S. Appl. No. 11/904,064, dated Sep. 12, 2013.
Response to OA from U.S. Appl. No. 11/904,064, filed Nov. 11, 2013.
Office Action from U.S. Appl. No. 11/904,064, dated Jan. 7, 2014.
Foreign Office Action for European Appl. No. 8745097.9; dated Jul. 25, 2016.
W.H. Southwell: (Gradient-index antireflection coatings, Optical Letters, vol. 8, No. 11, Nov. 1, 1983 (Nov. 1, 1983), p. 584.
Second Examination from European Patent Appl. No. 09 159 460.6-1552, dated Feb. 10, 2016.
Notice of Reasons for Rejection for Japanese Application No. 2017-098246; Dated Mar. 13, 2018.
Summons to Attend Oral Proceedings for European Application No. 09159460.6; Dated May 16, 2018.