Materials Letters, vol. 2, No. 3, Feb. 1984, pp. 184-188, Amsterdam, NL; S. Mahajan et al., "The Origin of Dark Spot Defects in InP/InGa As P Aged Light Emitting Diodes", FIG. 1, p. 184, last paragraph. |
Applied Physics Letters, vol. 43, No. 1, Jul. 1, 1983, pp. 103-105, New York (US), K. Mohammed et al.: "Effects of V/III Variation on the Optical Properties of GaAs and GaACAs Grown by Metalorganic Chemical Vapor Deposition". |
Optical Communication; 9th European Conference of Optical Communication-ECOC83, Genev. 23-26 Oct. 1983, (Switzerland); edited by H. Melchior & A. Sollberger, Institute for Applied Physics, Zurich (CH), pp. 471-474, M. Krakowski et al.: AlGaAs/GaAs Double Heterostructure Super Luminescent Diodes for Fibre Gyro. *Abstract; p. 471, paragraphs 5 and 6, FIG. 1. |
IEEE Journal of Quantum Electronics, vol. QE15, No. 3, Mar. 1979, pp. 128-135, New York (US), R. Dupuis et al.: "Preparation and Properties of GaAlAs-GaAs Heterostructure Lasers Grown by Metal Organic Chemical Vapor Deposition". |
Ibid, vol. QE17, No. 3, Mar. 1981, pp. 387-391, New York (US), T. P. Lee: "Improved Molecular Beam Epitaxial Growth of AlGaAs/GaAs High Radiance LED's for Optical Communications.", *FIG. 1; Section II and Section V*. |
European Conference of Optical Communication Held at Cannes (FR), 21-24 Sep. 1982; Communication B1-4, pp. 118-123, P. Hirtz et al., "Life Tests of L.P.E. and M.O.V.P.E. Shallow Proton Stripe GaInAsP Laser Diodes", *p. 120, section 3, entitled "Metal Organic Vapour Phase Epitaxy"; FIG. 3. |
Japanese Journal of Applied Physics, vol. 22, No. 7, part 2, Jul. 1983, pp. L450-L451, Tokyo (JP), Y. Shinoda et al.: "GaAs Light Emitting Diodes Fabricated on SiO2/Si Wafers.", *p. L450, left hand col., last paragraph-right-hand col., pentultimate paragraph*. |
Applied Physics Letters, vol. 43, No. 1, Jul. 1, 1983, pp. 103-105, New York (US), K. Mohammed et al.: "Effect of V/III Variation of GaAs and GaACAs Grown by Metalorganic Chemical Vapor Deposition". |
J. Cryst. Growth; vol. 55, 1981, pp. 223-228. |