Claims
- 1. A light-emitting diode having a plurality of hetero-junctions of aluminum gallium arsenide, comprising:
- a substrate of p-type gallium arsenide;
- an intervening layer of p-type Al.sub.x1 Ga.sub.1-x As formed on said substrate;
- a cladding layer of p-type Al.sub.x2 Ga.sub.1-x2 As formed on said intervening layer;
- an active layer of p-type Al.sub.x3 Ga.sub.1-x3 As formed an said cladding layer; and
- a window layer of n-type Al.sub.x4 Ga.sub.1-x4 As formed on said active layer;
- wherein x1, x2, x3 and x4 represent mixed crystal ratios of aluminum to arsenic of said layers, respectively, and meet the condition in that;
- x2.gtoreq.x4>x1.gtoreq.x3 (0.ltoreq.x1, x2, x3, x4.ltoreq.1).
- 2. A light-emitting diode, according to claim 1, wherein:
- a thickness of said cladding layer is 0.05-10 micro meters.
- 3. A light-emitting diode having a plurality of hetero-junctions of aluminum gallium arsenide layers, each of said aluminum gallium arsenide being formed by epitaxial growth, comprising:
- a substrate of p-type gallium arsenide;
- an intervening layer of aluminum gallium arsenide formed on said substrate;
- a cladding layer of aluminum gallium arsenide formed on said intervening layer;
- an active layer of aluminum gallium arsenide formed on said cladding layer; and
- a window layer of aluminum gallium arsenide formed on said active layer;
- wherein said intervening, cladding and active layers are doped with at least one p-type dopant, respectively, and said window layer is doped with at least one n-type dopant, said at least one p-type dopant in said cladding layer being thermally diffused from said intervening layer by subsequent epitaxial growths of said active layer and said window layer so as to invert the initial type of conduction of said cladding layer.
- 4. A light-emitting diode, according to claim 3, wherein:
- a thickness of said cladding layer is 0.05-10 micro meters.
Parent Case Info
This application is a divisional of application Ser. No. 08/766,867 filed Dec. 13, 1996 now U.S. Pat. No. 5,888,843.
US Referenced Citations (5)
Foreign Referenced Citations (5)
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5-63235 |
Mar 1993 |
JPX |
5-243611 |
Sep 1993 |
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6-252444 |
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Divisions (1)
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Number |
Date |
Country |
Parent |
766867 |
Dec 1996 |
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