This invention relates to light emitting display devices, for example electroluminescent displays, particularly active matrix display devices.
Matrix display devices employing electroluminescent, light-emitting, display elements are well known. The display elements may comprise organic thin film electroluminescent elements, for example using polymer materials, or else light emitting diodes (LEDs) using traditional III-V semiconductor compounds. Recent developments in organic electroluminescent materials, particularly polymer materials, have demonstrated their ability to be used practically for video display devices. These polymer materials typically comprise one or more layers of a semiconducting conjugated polymer sandwiched between a pair of electrodes, one of which is transparent and the other of which is of a material suitable for injecting holes or electrons into the polymer layer.
The polymer material can be fabricated using a CVD process, or a spin coating technique using a solution of a soluble conjugated polymer. Ink-jet printing may also be used. Organic electroluminescent materials exhibit diode-like I-V properties, so that they are capable of providing both a display function and a switching function, and can therefore be used in passive type displays. Alternatively, these materials may be used for active matrix display devices, with each pixel comprising a display element and a switching device for controlling the current through the display element.
Display devices of this type have current-driven display elements, so that a conventional, analogue drive scheme involves supplying a controllable current to the display element. It is known to provide a current source transistor as part of the pixel configuration, with the gate voltage supplied to the current source transistor determining the current through the display element. A storage capacitor holds the gate voltage after the addressing phase.
The electroluminescent display element 2 comprises an organic light emitting diode, represented here as a diode element (LED) and comprising a pair of electrodes between which one or more active layers of organic electroluminescent material is sandwiched. The display elements of the array are carried together with the associated active matrix circuitry on one side of an insulating support. Either the cathodes or the anodes of the display elements are formed of transparent conductive material. The support is of transparent material such as glass and the electrodes of the display elements 2 closest to the substrate may consist of a transparent conductive material such as ITO so that light generated by the electroluminescent layer is transmitted through these electrodes and the support so as to be visible to a viewer at the other side of the support.
The drive transistor 22 in this circuit is implemented as a p-type TFT, so that the storage capacitor 24 holds the gate-source voltage fixed. This results in a fixed source-drain current through the transistor, which therefore provides the desired current source operation of the pixel.
The invention is concerned particularly with pixel configurations in which the power supply lines 26 are parallel to the column conductors 6, for example formed from the same metal layer. This metal layer is typically the top metal of the fabrication process, which can be thicker and therefore less resistive than the bottom metal layer usually used for forming the row conductors. The length of the power line is also then shorter for landscape displays, so that the voltage drops along the line will be lower, enabling larger displays to be fabricated.
If the pixel circuit of
Current mirror circuits do not suffer this drawback, as the power supply to the pixel can be continuous and does not need to be interrupted. For this reason, current mirror circuits are typically used for implementing pixel configurations with vertical power supply lines. These are current-addressed pixel circuits rather than voltage-addressed pixel circuits.
However, the driver circuitry and drive scheme is simpler for voltage-addressed pixels than for current-addressed pixels, and there remains a need to solve the problem of vertical cross talk in a simple manner for voltage-addressed pixels using vertical power lines.
According to the invention, there is provided an active matrix electroluminescent display device comprising an array of display pixels arranged in rows and columns, each pixel comprising:
In this display device, pixel drive signals are loaded into the display array in one phase, in a row by row manner. As the power supply lines are in columns, during loading of the pixel drive signals, a current is provided to only one pixel along the power supply line at a time. No current is drawn by any display elements during this time, so that vertical cross talk is avoided. This enables pixel data to be stored accurately on the pixels.
The EL display element and the drive transistor are preferably connected in series between first and second power lines.
The isolating transistor is preferably connected between the display element and the drive transistor.
Each pixel may further comprise a storage capacitor between the gate and source of the drive transistor. In this case, each pixel may further comprise a light-dependent device for discharging the storage capacitor in dependence on the light output of the display element.
This optical feedback arrangement provides compensation for ageing of the display element characteristics. However, this also requires higher peak (initial) currents to be drawn by the display elements.
To overcome the higher initial peak current, in the second mode, the isolating transistors for different rows of pixels can be turned on to couple the drive transistors to the display elements for rows of pixels in sequence. This enables the initial driving of pixels to be staggered, so that any column of pixels (sharing a power supply line) has only one pixel drawing the peak initial current, and the total current drawn from the power supply always approximates to an average value.
The invention also provides a method of addressing the pixels of an active matrix electroluminescent display device, comprising an array of rows and columns of display pixels, each comprising an electroluminescent (EL) display element and a drive transistor for driving a current through the display element, the method comprising:
in a first mode, isolating the drive transistor from the display element in each pixel, and providing pixel drive signals to all pixels of the array in a row-by-row sequence; and
in a second mode, coupling the drive transistor to the display element in each pixel and driving current through the display elements by drawing current from a column power supply line through the drive transistor and the display element.
This method provides operation of a pixel circuit with column power supply lines which eliminates vertical cross talk.
In the second mode, the drive transistors can be coupled to the display elements for rows of pixels in sequence. This is particularly suitable for an optical feedback pixel, in which part of the light output from the display element is used to control operation of the drive transistor. This drive scheme requires higher initial pixel drive currents, and by coupling the drive transistors to the display elements for rows of pixels in sequence, these initial peak currents are staggered.
Examples of the invention will now be described in detail with reference to the accompanying drawings, in which:
The invention provides an active matrix electroluminescent display device having column power supply lines and in which the drive transistor of each pixel is isolated from the display element during pixel programming. Pixel programming is carried out for all pixels, row-by-row, before any display pixels are driven. As the power supply lines are in columns and pixel programming is row-by-row, during pixel programming a current is provided to only one pixel along the power supply line at a time. No current is drawn by any display elements during this time, so that vertical cross talk is avoided.
The pixel is operable in two modes, and these are explained with reference to
Plot 40 shows the field pulse, which separates the addressing of sequential frames of image data. Plots 42 show row address pulses, which are used to switch on the address transistors 16 for complete rows of pixels. A pulse represents an ON condition of the address transistor.
A first mode 50 is a pixel programming mode. The isolating transistor 30 isolates the drive transistor 22 from the display element 2 for each pixel, and pixel drive signals are provided to all pixels of the array in a row-by-row sequence. As the power supply lines 26 are in columns, during loading of the pixel drive signals, a current is provided to only one pixel along the power supply line at a time. No current is drawn by any display elements during this time as a result of the isolating transistor, so that vertical cross talk is avoided. This enables pixel data to be stored accurately on the pixels.
A second mode 52 is a pixel drive mode. The isolating transistor 30 couples the drive transistor 22 to the display element 2 and current is driven through the display elements 2.
In the drive scheme of
There have been proposals for voltage-addressed pixel circuits which compensate for the aging of the LED material. For example, various pixel circuits have been proposed in which the pixels include a light sensing element. This element is responsive to the light output of the display element and acts to leak stored charge on the storage capacitor in response to the light output, so as to control the integrated light output of the display during the address period.
In the pixel circuit of
In this equation, ρPD is the efficiency of the photodiode, which is very uniform across the display, Cs is the storage capacitance, V(0) is the initial gate-source voltage of the drive transistor and VT is the threshold voltage of the drive transistor. The light output is therefore independent of the EL display element efficiency and thereby provides aging compensation. VT does vary across the display, and various other techniques have been proposed for compensating for these threshold voltage variations.
As the light output decays in this circuit, high initial currents are required to achieve high initial brightness, which is then reduced by the optical feedback system to provide the desired average light output. This means that very large currents will flow along the power rows at the beginning of the pixel driving phase in the circuit of
In particular, the rows of pixels are conventionally addressed simultaneously, and in the conventional circuit of
For this reason, the use of vertical power lines is particularly desirable for optical feedback circuits of the type explained with reference to
The invention can be applied to such optical feedback circuits, again in order to overcome the vertical cross talk problems associated with column power supply lines. The circuit of
As shown in
The drive scheme of
By staggering the starting the of time emission pulse 44 for the rows, the high initial currents drawn by the pixels in one row does not coincide with the high initial currents drawn by the pixels in another row. As a result, the total current drawn from the column power supply approximates to an average value of the pixel drive current.
This modification can be applied to all pixel designs and has benefits not only in the optical feedback implementation.
The drive scheme of the invention involves programming data into the pixels, followed by a short delay before the pixel drive phase. This delay is different for different rows, although less for the operation of
This transistor stops leakage or dark currents in the photodiode from discharging the storage capacitor.
As mentioned above, compensation schemes have also been proposed for compensating for threshold voltage variations across the substrate. These schemes can be used to modify the pixel circuits and drive schemes described above. Different threshold voltage compensation schemes have been proposed for amorphous silicon and for polysilicon drive transistors. Amorphous silicon transistors suffer in particular from voltage stress-induced variations in threshold voltage, so that compensation is required over time. Polysilicon transistors, suffer in particular from variations in threshold voltage over the substrate, but these remain fairly constant over time, so that initial compensation is required.
The invention can be applied to pixel circuits using n-type or p-type drive transistors, using any transistor technology, and using any appropriate additional compensation schemes for threshold voltage or for other compensation factors.
Other modifications will be apparent to those skilled in the art.
Number | Date | Country | Kind |
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0400209.3 | Jan 2004 | GB | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/IB2005/050026 | 1/4/2005 | WO | 00 | 6/28/2006 |