Claims
- 1. A light emitting element, comprising:
a light emitting layer; a rectangular first principal surface being parallel to the light emitting layer; a rectangular second principal surface opposing to the first principal surface so that the light emitting layer is sandwiched between the first and second principal surfaces; and first through fourth side surfaces of the light emitting element provided with a rough surface, the first through fourth side surfaces connecting between the first principal surface and the second principal surface, respectively so as to define a solid shape.
- 2. The light emitting element of claim 1, wherein the first and second side surfaces are disposed opposite each other and between the first and second principal surface, having a trapezoid shape for a cross section orthogonal to a set of opposite edges of the first principal surface, and the third and fourth side surfaces are disposed opposite each other and between the first and second principal surface, having an inverse-trapezoid shape for a cross section orthogonal to another set of opposite edges of the first principal surface.
- 3. The light emitting element of claim 1, wherein the first and second side surfaces of the light emitting element are configured to have a stress applied thereto and induced in a direction, extending from a set of opposite edges of the first principal surface to a corresponding set of opposite edges of the second principal surface, and the third and fourth side surfaces of the light emitting element are configured to have another stress applied thereto and induced in a reverse direction to the stress, extending from another set of opposite edges of the first principal surface to a corresponding set of opposite edges of the second principal surface.
- 4. The light emitting element of claim 1, wherein a surface roughness interval is in a range of between approximately 0.5 and 5 μm.
- 5. The light emitting element of claim 2, wherein respective angles between the first principal surface and the first or second side surface, and between the second principal surface and the third or fourth side surface is in a range of between approximately 20 and 40 degrees.
- 6. The light emitting element of claim 2, wherein crystal orientations of the first and second principal surfaces are in a range of between a (100) plane and approximately 20 degrees from the (100) plane.
- 7 The light emitting element of claim 2 wherein a surface roughness interval is in a range of between approximately 0.5 and 5 μm.
- 8. The light emitting element of claim 3 wherein respective angles between the first principal surface and the first or second side surface, and between the second principal surface and the third or fourth side surface is in a range of between approximately 20 and 40 degrees.
- 9 The light emitting element of claim 3 wherein crystal orientations of the first and second principal surfaces are in a range of between a (100) plane and approximately 20 degrees from the (100) plane.
- 10 The light emitting element of claim 3 wherein a surface roughness interval is in a range of between approximately 0.5 and 5 μm.
- 11 A manufacturing method for a light emitting element, comprising:
forming first cuts in a first direction using a V-shaped blade on a first principal surface of a semiconductor substrate having a light emitting layer; forming second cuts in a second direction perpendicular to the first direction facing the first principal surface using the V-shaped blade on a second principal surface of the semiconductor substrate having the light emitting layer; separating the semiconductor substrate into chips along the first and second cuts; and forming rough surfaces on side surfaces of the first and second cuts by a wet etching process.
- 12 The manufacturing method of claim 11 wherein the wet etching is performed after forming the first cuts and performed after forming the second cuts.
- 13 The manufacturing method of claim 11 wherein a surface roughness interval is in a range of between approximately 0.5 and 5 μm.
- 14 The manufacturing method of claim 11 wherein the wet etching is performed using a hydrochloric acid,
- 15 A manufacturing method for a light emitting element, comprising:
separating a semiconductor substrate having a light emitting layer into chips; and forming rough surfaces on all of side surfaces of the chips by wet etching using hydrofluoric acid.
- 16. The manufacturing method of claim 15, wherein a crystal orientation of a principal surface of the semiconductor substrate is in a range of between a (100) plane and approximately 20 degrees from the (100) plane.
- 17. The manufacturing method of claim 15, wherein a surface roughness interval is in a range of between approximately 0.5 and 5 μm.
- 18. The manufacturing method of claim 15, wherein the chip is in a shape of a rectangular solid.
Priority Claims (2)
Number |
Date |
Country |
Kind |
P2002-20185 |
Jan 2002 |
JP |
|
P2003-16275 |
Jan 2003 |
JP |
|
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is based upon and claims the benefit of priority from prior Japanese Patent Application P2002-20185 filed on Jan. 29, 2002 and Japanese Patent Application P2003-16275 filed on Jan. 24, 2003; the entire contents of which are incorporated by reference herein.