LIGHT EMITTING MATERIAL, LIGHT EMITTING DEVICE, AND ELECTRONIC DEVICE

Abstract

An object is to provide a novel light emitting material. Another object is to provide a light emitting device and an electronic device with reduced power consumption. Still another object is to provide a light emitting device and an electronic device which can be manufactured at low cost. Provided is a light emitting element including a base material, a first impurity element, a second impurity element, and a third impurity element. The base material is one of ZnS, CdS, CaS, Y2S3, Ga2S3, SrS, BaS, ZnO, Y2O3, AlN, GaN, InN, ZnSe, ZnTe, and SrGa2S4; the first impurity element is any of Cu, Ag, Au, Pt, and Si; the second impurity element is any of F, Cl, Br, I, B, Al, Ga, In, and Tl; and the third impurity element is any of Li, Na, K, Rb, Cs, N, P, As, Sb, and Bi.

Description

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a diagram illustrating a light emitting element of the present invention.

FIG. 2 is a diagram illustrating a light emitting element of the present invention.

FIG. 3 is a diagram illustrating a light emitting device of the present invention.

FIGS. 4A and 4B are diagrams illustrating a light emitting device of the present invention.

FIGS. 5A to 5D are diagrams illustrating electronic devices of the present invention.

FIG. 6 is a diagram illustrating an electronic device of the present invention.

FIG. 7 is a diagram showing an emission spectrum of a light emitting material of Embodiment 1.

FIG. 8 is a diagram showing an emission spectrum of a light emitting material of Embodiment 2.

Claims

1. A light emitting material comprising: a base material;a first impurity element;a second impurity element; anda third impurity element,wherein the base material is a material selected from the group consisting of zinc sulfide, cadmium sulfide, calcium sulfide, yttrium sulfide, gallium sulfide, strontium sulfide, barium sulfide, zinc oxide, yttrium oxide, aluminum nitride, gallium nitride, indium nitride, zinc selenide, zinc telluride, strontium gallium sulfide, and a combination thereof,wherein the first impurity element is at least an element selected from the group consisting of copper, silver, gold, platinum, and silicon,wherein the second impurity element is at least an element selected from the group consisting of fluorine, chlorine, bromine, iodine, boron, aluminum, gallium, indium, and thallium, andwherein the third impurity element is at least an element selected from the group consisting of lithium, sodium, potassium, rubidium, cesium, nitrogen, phosphorus, arsenic, antimony, and bismuth.

2. The light emitting material according to claim 1, wherein a concentration of each of the first impurity element, the second impurity element, and the third impurity element with respect to the base material is 0.01 atomic % to 10 atomic %.

3. The light emitting material according to claim 1, wherein a concentration of each of the first impurity element, the second impurity element, and the third impurity element with respect to the base material is 0.1 atomic % to 5 atomic %.

4. A light emitting material comprising: a base material;a material selected from the group consisting of copper fluoride, copper chloride, copper iodide, copper bromide, copper nitride, copper phosphide, silver fluoride, silver chloride, silver iodide, silver bromide, gold chloride, gold bromide, platinum chloride, and a combination thereof; andan impurity element,wherein the base material is a material selected from the group consisting of zinc sulfide, cadmium sulfide, calcium sulfide, yttrium sulfide, gallium sulfide, strontium sulfide, barium sulfide, zinc oxide, yttrium oxide, aluminum nitride, gallium nitride, indium nitride, zinc selenide, zinc telluride, strontium gallium sulfide, and a combination thereof, andwherein the impurity element is at least an element selected from the group consisting of lithium, sodium, potassium, rubidium, cesium, nitrogen, phosphorus, arsenic, antimony, and bismuth.

5. A light emitting material comprising: a base material;an impurity element; anda material selected from the group consisting of lithium fluoride, lithium chloride, lithium iodide, copper bromide, and sodium chloride, boron nitride, aluminum nitride, aluminum antimonide, gallium phosphide, gallium arsenide, indium phosphide, indium arsenide, indium antimonide, and a combination thereof,wherein the base material is a material selected from the group consisting of zinc sulfide, cadmium sulfide, calcium sulfide, yttrium sulfide, gallium sulfide, strontium sulfide, barium sulfide, zinc oxide, yttrium oxide, aluminum nitride, gallium nitride, indium nitride, zinc selenide, zinc telluride, strontium gallium sulfide, and a combination thereof, andwherein the impurity element is at least an element selected from the group consisting of copper, silver, gold, platinum, and silicon.

6. A light emitting device comprising: a pair of electrodes;a light emitting layer including a light emitting material between the pair of electrodes; andan insulating layer between the light emitting layer and one of the pair of electrodes,wherein the light emitting material comprises a base material, a first impurity element, a second impurity element, and a third impurity element,wherein the base material is a material selected from the group consisting of zinc sulfide, cadmium sulfide, calcium sulfide, yttrium sulfide, gallium sulfide, strontium sulfide, barium sulfide, zinc oxide, yttrium oxide, aluminum nitride, gallium nitride, indium nitride, zinc selenide, zinc telluride, strontium gallium sulfide, and a combination thereof,wherein the first impurity element is at least an element selected from the group consisting of copper, silver, gold, platinum, and silicon,wherein the second impurity element is at least an element selected from the group consisting of fluorine, chlorine, bromine, iodine, boron, aluminum, gallium, indium, and thallium, andwherein the third impurity element is at least an element selected from the group consisting of lithium, sodium, potassium, rubidium, cesium, nitrogen, phosphorus, arsenic, antimony, and bismuth.

7. The light emitting device according to claim 6, wherein a concentration of each of the first impurity element, the second impurity element, and the third impurity element with respect to the base material is 0.01 atomic % to 10 atomic %.

8. The light emitting device according to claim 6, wherein a concentration of each of the first impurity element, the second impurity element, and the third impurity element with respect to the base material is 0.1 atomic % to 5 atomic %.

9. The light emitting device according to claim 6, wherein a thickness of the insulating layer is 1 nm to 500 nm.

10. The light emitting device according to claim 6, wherein a thickness of the insulating layer is 1 nm to 100 nm.

11. The light emitting device according to claim 6, wherein the insulating layer includes at least one selected from the group consisting of yttrium oxide, aluminum oxide, tantalum oxide, silicon oxide, and silicon nitride.

12. The light emitting device according to claim 6, wherein the insulating layer includes at least one of barium titanate and lead titanate.

13. Alight emitting device comprising: a pair of electrodes;a light emitting layer including a light emitting material between the pair of electrodes; andan insulating layer between the light emitting layer and one of the pair of electrodes,wherein the light emitting material comprises a base material, a material, and an impurity element,wherein the material is at least one selected from the group consisting of copper fluoride, copper chloride, copper iodide, copper bromide, copper nitride, copper phosphide, silver fluoride, silver chloride, silver iodide, silver bromide, gold chloride, gold bromide, platinum chloride, and a combination thereof,wherein the base material is a material selected from the group consisting of zinc sulfide, cadmium sulfide, calcium sulfide, yttrium sulfide, gallium sulfide, strontium sulfide, barium sulfide, zinc oxide, yttrium oxide, aluminum nitride, gallium nitride, indium nitride, zinc selenide, zinc telluride, strontium gallium sulfide, and a combination thereof, andwherein the impurity element at least an element selected from the group consisting of lithium, sodium, potassium, rubidium, cesium, nitrogen, phosphorus, arsenic, antimony, and bismuth.

14. The light emitting device according to claim 13, wherein a thickness of the insulating layer is 1 nm to 500 nm.

15. The light emitting device according to claim 13, wherein a thickness of the insulating layer is 1 nm to 100 nm.

16. The light emitting device according to claim 13, wherein the insulating layer includes at least one selected from the group consisting of yttrium oxide, aluminum oxide, tantalum oxide, silicon oxide, and silicon nitride.

17. The light emitting device according to claim 13, wherein the insulating layer includes at least one of barium titanate and lead titanate.

18. A light emitting device comprising: a pair of electrodes;a light emitting layer including a light emitting material between the pair of electrodes; andan insulating layer between the light emitting layer and one of the pair of electrodes,wherein the light emitting material comprises a base material, a material, and an impurity element,wherein the material is a material selected from the group consisting of lithium fluoride, lithium chloride, lithium iodide, copper bromide, and sodium chloride, boron nitride, aluminum nitride, aluminum antimonide, gallium phosphide, gallium arsenide, indium phosphide, indium arsenide, indium antimonide, and a combination thereof,wherein the base material is a material selected from the group consisting of zinc sulfide, cadmium sulfide, calcium sulfide, yttrium sulfide, gallium sulfide, strontium sulfide, barium sulfide, zinc oxide, yttrium oxide, aluminum nitride, gallium nitride, indium nitride, zinc selenide, zinc telluride, strontium gallium sulfide, and a combination thereof, andwherein the impurity element is at least an element selected from the group consisting of copper, silver, gold, platinum, and silicon.

19. The light emitting device according to claim 18, wherein a thickness of the insulating layer is 1 nm to 500 nm.

20. The light emitting device according to claim 18, wherein a thickness of the insulating layer is 1 nm to 100 nm.

21. The light emitting device according to claim 18, wherein the insulating layer includes at least one selected from the group consisting of yttrium oxide, aluminum oxide, tantalum oxide, silicon oxide, and silicon nitride.

22. The light emitting device according to claim 18, wherein the insulating layer includes at least one of barium titanate and lead titanate.

23. An electronic device having the light emitting device according to any one of claims 6 to 22, wherein the light emitting device includes a display device.