LIGHT-EMITTING MATERIAL, LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND MANUFACTURING METHOD OF LIGHT-EMITTING MATERIAL

Abstract

To provide a light-emitting material made of an inorganic compound, which exhibits higher luminance than the conventional material, due to its crystal structure. The light-emitting material includes a host material and an impurity element which serves as a luminescence center. The main crystal structure of the light-emitting material is hexagonal. The host material is a compound of a Group 2 element and a Group 16 element, or a compound of a Group 12 element and a Group 16 element. The impurity element includes at least one of manganese (Mn), samarium (Sm), terbium (Tb), erbium (Er), thulium (Tm), europium (Eu), cerium (Ce), and praseodymium (Pr).

Description

BRIEF DESCRIPTION OF DRAWINGS

In the accompanying drawings:

FIG. 1 illustrates a light-emitting element of the invention;

FIGS. 2A to 2C illustrate light-emitting elements of the invention;

FIG. 3 illustrates a light-emitting device of the invention;

FIGS. 4A and 4B illustrate a light-emitting device of the invention;

FIGS. 5A to 5D illustrate electronic devices of the invention;

FIG. 6 illustrates an electronic device of the invention;

FIG. 7 shows the result of XRD analysis of ZnS:Mn;

FIG. 8 shows the result of XRD analysis of ZnS:MnS;

FIG. 9 shows the result of XRD analysis of ZnS:MnS:Si; and

FIG. 10 illustrates a conventional light-emitting element.

Claims

1. A light-emitting material comprising: a host material;an impurity element; anda Group 14 element,wherein a main crystal structure of the light-emitting material is hexagonal;wherein the host material comprises at least one of a compound of a Group 2 element and a Group 16 element and a compound of a Group 12 element and a Group 16 element; andwherein the impurity element includes at least one selected from the group consisting of manganese (Mn), samarium (Sm), terbium (Tb), erbium (Er), thulium (Tm), europium (Eu), cerium (Ce), and praseodymium (Pr).

2. A light-emitting material comprising: a host material; andan impurity element,wherein a main crystal structure of the light-emitting material is hexagonal;wherein the host material comprises at least one of a compound of a Group 2 element and a Group 16 element and a compound of a Group 12 element and a Group 16 element, andwherein the impurity element includes at least one selected from the group consisting of manganese (Mn), samarium (Sm), terbium (Tb), erbium (Er), thulium (Tm), europium (Eu), cerium (Ce), and praseodymium (Pr).

3. The light-emitting material according to claim 1, wherein the Group 14 element comprises at least one selected from the group consisting of carbon (C), silicon (Si), germanium (Ge), tin (Sn), and lead (Pb).

4. The light-emitting material according to claim 1 or 2, wherein the compound of the Group 2 element and the Group 16 element includes at least one selected from the group consisting of magnesium oxide (MgO), calcium oxide (CaO), strontium oxide (SrO), barium oxide (BaO), magnesium sulfide (MgS), calcium sulfide (CaS), strontium sulfide (SrS), barium sulfide (BaS), magnesium selenide (MgSe), calcium selenide (CaSe), strontium selenide (SrSe), barium selenide (BaSe), magnesium telluride (MgTe), calcium telluride (CaTe), strontium telluride (SrTe), and barium telluride (BaTe).

5. The light-emitting material according to claim 1 or 2, wherein the compound of the Group 12 element and the Group 16 element includes at least one selected from the group consisting of zinc oxide (ZnO), cadmium oxide (CdO), mercury oxide (HgO), zinc sulfide (ZnS), cadmium sulfide (CdS), mercury sulfide (HgS), zinc selenide (ZnSe), cadmium selenide (CdSe), mercury selenide (HgSe), zinc telluride (ZnTe), cadmium telluride (CdTe), and mercury telluride (HgTe).

6. A light-emitting element comprising: a first electrode;a second electrode; anda light-emitting layer interposed between the first electrode and the second electrode, the light-emitting layer including a light-emitting material comprising; a host material; andan impurity element,wherein a main crystal structure of the light-emitting material is hexagonal;wherein the host material comprises at least one of a compound of a Group 2 element and a Group 16 element and a compound of a Group 12 element and a Group 16 element, andwherein the impurity element includes at least one selected from the group consisting of manganese (Mn), samarium (Sm), terbium (Tb), erbium (Er), thulium (Tm), europium (Eu), cerium (Ce), and praseodymium (Pr).

7. A light-emitting element comprising: a first electrode;a second electrode; anda light-emitting layer interposed between the first electrode and the second electrode, the light-emitting layer including a light-emitting material comprising: a host material;an impurity element; anda Group 14 element,wherein a main crystal structure of the light-emitting material is hexagonal;wherein the host material comprises a compound of a Group 2 element and a Group 16 element and a compound of a Group 12 element and a Group 16 element, andwherein the impurity element includes at least one selected from the group of manganese (Mn), samarium (Sm), terbium (Tb), erbium (Er), thulium (Tm), europium (Eu), cerium (Ce), and praseodymium (Pr).

8. The light-emitting element according to claim 7, wherein the Group 14 element comprises at least one selected from the group consisting of carbon (C), silicon (Si), germanium (Ge), tin (Sn), and lead (Pb).

9. The light-emitting element according to claim 6 or 7, wherein the compound of the Group 2 element and the Group 16 element includes at least one selected from the group consisting of magnesium oxide (MgO), calcium oxide (CaO), strontium oxide (SrO), barium oxide (BaO), magnesium sulfide (MgS), calcium sulfide (CaS), strontium sulfide (SrS), barium sulfide (BaS), magnesium selenide (MgSe), calcium selenide (CaSe), strontium selenide (SrSe), barium selenide (BaSe), magnesium telluride (MgTe), calcium telluride (CaTe), strontium telluride (SrTe), and barium telluride (BaTe).

10. The light-emitting element according to claim 6 or 7, wherein the compound of the Group 12 element and the Group 16 element includes at least one selected from the group consisting of zinc oxide (ZnO), cadmium oxide (CdO), mercury oxide (HgO), zinc sulfide (ZnS), cadmium sulfide (CdS), mercury sulfide (HgS), zinc selenide (ZnSe), cadmium selenide (CdSe), mercury selenide (HgSe), zinc telluride (ZnTe), cadmium telluride (CdTe), and mercury telluride (HgTe).

11. A light-emitting device comprising the light-emitting element according to claim 6 or 7.

12. An electronic device comprising the light-emitting element according to claim 6 or 7.

13. A manufacturing method of a light-emitting material, comprising the step of: forming a main crystal structure into a hexagonal crystal structure by baking a host material and an impurity element,wherein the host material comprises at least one of a compound of a Group 2 element and a Group 16 element and a compound of a Group 12 element and a Group 16 element, andwherein the impurity element includes at least one selected from the group consisting of manganese (Mn), samarium (Sm), terbium (Tb), erbium (Er), thulium (Tm), europium (Eu), cerium (Ce), and praseodymium (Pr).

14. A manufacturing method of a light-emitting material, comprising the step of: forming a main crystal structure into a hexagonal crystal structure by baking a host material, an impurity element, and a Group 14 element,wherein the host material comprises at least one of a compound of a Group 2 element and a Group 16 element and a compound of a Group 12 element and a Group 16 element, andwherein the impurity element includes at least one selected from the group consisting of manganese (Mn), samarium (Sm), terbium (Tb), erbium (Er), thulium (Tm), europium (Eu), cerium (Ce), and praseodymium.

15. The manufacturing method of a light-emitting material according to claim 14, wherein the Group 14 element comprises at least one selected from the group consisting of carbon (C), silicon (Si), germanium (Ge), tin (Sn), or lead (Pb).

16. The manufacturing method of a light-emitting material according to claim 13 or 14, wherein the compound of the Group 2 element and the Group 16 element includes at least one selected from the group consisting of magnesium oxide (MgO), calcium oxide (CaO), strontium oxide (SrO), barium oxide (BaO), magnesium sulfide (MgS), calcium sulfide (CaS), strontium sulfide (SrS), barium sulfide (BaS), magnesium selenide (MgSe), calcium selenide (CaSe), strontium selenide (SrSe), barium selenide (BaSe), magnesium telluride (MgTe), calcium telluride (CaTe), strontium telluride (SrTe), and barium telluride (BaTe).

17. The manufacturing method of a light-emitting material according to claim 13 or 14, wherein the compound of the Group 12 element and the Group 16 element includes at least one selected from the group consisting of zinc oxide (ZnO), cadmium oxide (CdO), mercury oxide (HgO), zinc sulfide (ZnS), cadmium sulfide (CdS), mercury sulfide (HgS), zinc selenide (ZnSe), cadmium selenide (CdSe), mercury selenide (HgSe), zinc telluride (ZnTe), cadmium telluride (CdTe), and mercury telluride (HgTe).