The subject matter herein generally relates to a light source device and a display with the light source device.
Displays are widely used. A display generally includes a light source device. A quality of the light source device affects a display quality of the display.
Implementations of the present technology will now be described, by way of embodiment, with reference to the attached figures.
It will be appreciated that for simplicity and clarity of illustration, where appropriate, reference numerals have been repeated among the different figures to indicate corresponding or analogous elements. In addition, numerous specific details are set forth in order to provide a thorough understanding of the embodiments described herein. However, it will be understood by those of ordinary skill in the art that the embodiments described herein can be practiced without these specific details. In other instances, methods, procedures, and components have not been described in detail so as not to obscure the related relevant feature being described. Also, the description is not to be considered as limiting the scope of the embodiments described herein. The drawings are not necessarily to scale and the proportions of certain parts may be exaggerated to better illustrate details and features of the present disclosure.
The term “comprising,” when utilized, means “including, but not necessarily limited to”; it specifically indicates open-ended inclusion or membership in the so-described combination, group, series, and the like.
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Each light emitting diode package 20 includes a substrate 201, a first light emitting diode chip 206, a second light emitting diode chip 207, and a package layer 208.
The substrate 201 is formed on the carrier 10, and electrically connected to the first control wiring 101 and the second control wiring 102.
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In at least one embodiment, the first electrode 202, the second electrode 203, the third electrode 204, and the fourth electrode 205 may be made of a material selected from a group consisting of germanium (Ge), nickel (Ni), chromium (Cr), titanium (Ti), gold (Au), wolfram (W) and any combination thereof.
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In at least one embodiment, the first light emitting diode chip 206 may emit a first beam of light having a wavelength of 400 nm to 480 nm. The wavelength at a peak of the first beam of light is 450 nm. A frequency band of the first beam of light has a full width at half maximum of 30 nm to 40 nm. In at least one embodiment, the first beam of light is within a narrow frequency band. The first control wiring 101 controls the first light emitting diode chip 206 to emit the first beam of light.
The second light emitting diode chip 207 corresponds to the second control wiring 102. When the light source device 100 includes a plurality of light emitting diode packages 20, the second light emitting diode chips 207 are arranged along the second control wiring 102. The second light emitting diode chip 207 is formed on the second electrode 203 and the fourth electrode 205, and electrically connected to the second electrode 203 and the fourth electrode 205.
In at least one embodiment, the second light emitting diode chip 207 may emit a second beam of light having a wavelength of 500 nm to 545 nm. The wavelength at a peak of the second beam of light is 530 nm. A frequency band of the second beam of light has a full width at half maximum of 30 nm to 40 nm. In at least one embodiment, the second beam of light is within a narrow frequency band. The second control wiring 102 controls the second light emitting diode chip 207 to emit the second beam of light.
The package layer 208 is formed on the substrate 201 and covers the first light emitting diode chip 206 and the second light emitting diode chip 207. The package layer 208 includes a material for converting wavelengths, the converted wavelengths having a narrow range. The wavelength converting material is excited by the first and second beams of light to generate a third beam of light. The third beam has a wavelength of 635 nm to 640 nm. A frequency band of the third beam of light has a full width at half maximum of 10 nm to 50 nm. In at least one embodiment, the third beam of light is within a narrow frequency band. The frequency band of the third beam of light has a full width at half maximum of about 10 nm. When the full width at half maximum of the third beam of light is reduced from 50 nm to 10 nm, a color contrast of the light source device 100 is significantly improved, thereby improving a quality of the light source device 100.
In at least one embodiment, the wavelength converting material includes a compound containing at least one tetravalent manganese ion or a nitride. In at least one embodiment, the compound containing at least one tetravalent manganese ion may have a chemical structural formula of K2Si2F6:Mn4+. The nitride may have a chemical structural formula of SrLiAl3N4:Eu2+. The color contrast of the light source device 100 can be improved by controlling the full width at half maximum of the narrow frequency bands of the first and second beams of light to be within 40 nm, and the full width at half maximum of the narrow frequency band of the third beam of light to be within 50 nm. The color contrast enhances the consumer experience.
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The light guide plate 210 includes a light incident surface 2101. The light source device 100 faces toward the light incident surface 2101, such that the first, second, and third beams of light are incident into the light guide plate 210 from the light incident surface 2101.
The light guide plate 210 further includes a first light emitting surface 2102 connected to the light incident surface 2101. In at least one embodiment, the first light emitting surface 2102 may be perpendicular to the light incident surface 2101. The first, second, and third beams of light emitted from the first light emitting surface 2102 are incident into the diffusion plate 220.
The diffusion plate 220 is located on the first light emitting surface 2102, and includes a second light emitting surface2201 parallel to the first light emitting surface 2102. The first, second, and third beams of light emitted from the second light emitting surface2201 are incident into the filter 230.
The filter 230 is located on the second light emitting surface2201, and includes a third light emitting surface 2301. The first, second, and third beams of light are emitted from the third light emitting surface 2301.
It is to be understood, even though information and advantages of the present embodiments have been set forth in the foregoing description, together with details of the structures and functions of the present embodiments, the disclosure is illustrative only; changes may be made in detail, especially in matters of shape, size, and arrangement of parts within the principles of the present embodiments to the full extent indicated by the plain meaning of the terms in which the appended claims are expressed.
Number | Date | Country | Kind |
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201910426016.1 | May 2019 | CN | national |