1. Field of the Invention
The present disclosure relates to a lighting apparatus which utilizes light generated through irradiation of light, which is emitted from a light source, to a wavelength conversion element; a vehicle; and a method for controlling light distribution of the lighting apparatus.
2. Description of the Related Art
As illustrated in
PTL 1 has been known as prior art document information relating to this application, for example.
The conventional lighting apparatus described above has a problem of poor durability.
Specifically, the above conventional lighting apparatus is configured to use a MEMS mirror which is a mechanical component for controlling light distribution. The MEMS mirror moves a mirror with electrostatic power applied to an electrode formed on the movable mirror. Such mechanical component is worn with long-term use, so that controllability of the lighting apparatus is deteriorated, and durability is lowered.
In view of this, the present disclosure aims to enhance durability of a lighting apparatus having a wavelength conversion element and a condenser lens, and a vehicle using the lighting apparatus.
In order to solve the foregoing problem, the lighting apparatus according to the present disclosure includes: a light source; a wavelength conversion element that receives first light emitted from the light source and emits second light; a condenser that converges the first light onto a predetermined focal position of the wavelength conversion element; a projection lens that projects the second light; and a plurality of electrodes that change the focal position with a control signal.
This configuration enables changing of the place where the first light is converged on the wavelength conversion element without using a mechanical component. Consequently, durability of the lighting apparatus can be enhanced.
Preferably, in the lighting apparatus according to the present disclosure, the plurality of electrodes are disposed on the condenser.
Preferably, in the lighting apparatus according to the present disclosure, the plurality of electrodes are formed on a plane perpendicular to a principal axis of the first light.
Preferably, in the lighting apparatus according to the present disclosure, the plurality of electrodes are disposed at the light source.
Preferably, in the lighting apparatus according to the present disclosure, the light source has a plurality of optical waveguides, and the plurality of electrodes are respectively connected to the plurality of optical waveguides.
Preferably, in the lighting apparatus according to the present disclosure, the wavelength conversion element includes a plurality of segmented light conversion portions.
Preferably, in the lighting apparatus according to the present disclosure, the optical conversion portion has a phosphor.
Preferably, in the lighting apparatus according to the present disclosure, the condenser includes a collimator lens and a condenser lens.
A vehicle according to the present disclosure preferably has the above lighting apparatus.
Preferably, a method for controlling a lighting apparatus according to the present disclosure includes: providing the lighting apparatus with a controller that independently supplies power to the plurality of electrodes; and changing an amount of power to be supplied to the plurality of electrodes.
According to the present disclosure, the place where the first light is converged on the wavelength conversion element can be changed without using a mechanical component. Consequently, durability of the lighting apparatus can be enhanced.
Exemplary embodiments of the present disclosure will be described with reference to the drawings.
A lighting apparatus and a method for controlling the lighting apparatus according to a first exemplary embodiment of the present disclosure will be described below with reference to the drawings.
As illustrated in
Condenser 20 includes one or more lenses. In the present exemplary embodiment, condenser 20 includes collimator lens 25 and condenser lens 30.
As illustrated in
More specific description will be made below.
As illustrated in
Firstly, wavelength conversion element 50 that radiates second light 81 will be described. In the present exemplary embodiment, it is supposed that a wavelength of first light 71 ranges from 380 nm to 499 nm.
When first light 71 has a wavelength ranging from 420 nm to 499 nm, wavelength conversion element 50 can be formed by dispersing yellow phosphor having a main emission wavelength ranging from 540 nm to 610 nm and having an emission wavelength up to 660 nm into a transparent substrate, or by forming the yellow phosphor on a transparent substrate as a phosphor layer. Examples of materials used for the transparent substrate include silicone, low-melting-point glass, transparent ceramic, sapphire, and zinc oxide. The transparent base is formed such that a phosphor material is laminated as a phosphor layer using silicone, low-melting-point glass, and zinc oxide as binder. The phosphor material described below may be sintered to be used as the transparent substrate. When wavelength conversion element 50 described above is used, the material of the phosphor of wavelength conversion element 50, concentration of the distributed phosphor or concentration of the phosphor in the phosphor layer, or the formation position of the phosphor layer is controlled to adjust an intensity ratio between first light 71 and radiation light from the yellow phosphor. This results in allowing second light 81 emitted from wavelength conversion element 50 described above to be white light having a main wavelength ranging from 420 nm to 660 nm. Examples of usable yellow phosphor include Ce-activated YAG phosphor ((Y, Gd)3(Al, Ga)5O12:Ce), Eu-activated alpha-SiAlON phosphor, and Eu-activated (Ba, Sr)Si2O2N2 phosphor.
The phosphor is not limited to one type as described above. For example, red phosphor having a main emission wavelength ranging from 590 nm to 660 nm and green phosphor having a main emission wavelength ranging from 500 nm to 590 nm may be mixed to generate white light.
Examples of usable red phosphor include Eu-activated (Sr, Ca)AlSiN3 phosphor, and Eu-activated CaAlSiN3 phosphor. Examples of usable green phosphor include Ce-activated Lu3Al5O12 phosphor, Eu-activated beta SiAlON phosphor, Eu-activated SrSi2O2N2 phosphor, and Eu-activated (Ba, Sr)Si2O2N2 phosphor.
When first light 71 has a wavelength ranging from 380 nm to 430 nm, wavelength conversion element 50 can be formed by dispersing red phosphor having a main emission wavelength ranging from 590 nm to 660 nm, green phosphor having a main emission wavelength ranging from 500 nm to 590 nm, and blue phosphor having a main emission wavelength ranging from 430 nm to 500 nm into a transparent substrate, or by forming these phosphors on a transparent substrate as a phosphor layer. Wavelength conversion element 50 described above is used, and intensity ratio of radiation lights from the above red, green, and blue phosphors is adjusted. With this, second light 81 having high color rendering properties and wavelength ranging from 430 nm to 660 nm can be generated. Examples of usable blue phosphor include Eu-activated BaMgAl10O17 phosphor, Eu-activated Sr3MgSi2O8 phosphor, and Eu-activated Sr5(PO4)3Cl (SCA) phosphor. Examples of usable red phosphor include Eu-activated (Sr, Ca)AlSiN3 phosphor and Eu-activated CaAlSiN3 and also Y2O2S:Eu3+ phosphor.
Notably, when the wavelength of first light 71 ranges from 380 nm to 420 nm, a combination of blue phosphor having a main emission wavelength ranging from 430 nm to 500 nm and yellow phosphor having a main emission wavelength ranging from 540 nm to 610 nm and having an emission wavelength up to 700 nm may be used.
A method for controlling the lighting apparatus will next be described.
Lighting apparatus 1 for a vehicle illustrated in
The change in the focal position of condenser lens 30 will be described more specifically below with reference to
In
For condenser lens 30 illustrated in
As illustrated in
Although not illustrated, a second insulating film (not illustrated) is formed between first electrode 37A and second electrode 37B and between third electrode 37C and fourth electrode 37D. With the formation of the second insulating film (not illustrated), voltage between first electrode 37A and second electrode 37B and voltage between third electrode 37C and fourth electrode 37D can individually be controlled.
Although not illustrated, a second insulating film (not illustrated) is formed between fifth electrode 37E and sixth electrode 37F and between seventh electrode 37G and eighth electrode 37H. With the formation of the second insulating film (not illustrated), voltage between fifth electrode 37E and sixth electrode 37F and voltage between seventh electrode 37G and eighth electrode 37H can individually be controlled.
First light 72 enters condenser lens 30 thus configured, and wavelength conversion element 50 receives first light 72 (converged light 73) converged by condenser lens 30, and emits second light 81.
First liquid 31 and second liquid 32 have different refractive indices. First liquid 31 and second liquid 32 are located separately at the side of first transparent substrate 33 and at the side of second transparent substrate 34 without being mixed. Conductive aqueous solution can be used for first liquid 31, and non-conductive silicon oil can be used for second liquid 32, for example. Especially when vehicle 100 is used in cold area, it is desirable to use antifreeze liquid for first liquid 31 and second liquid 32. For example, it is desirable to use ethylene glycol for first liquid 31 and immersion oil for second liquid 32.
It is supposed below that the refractive index of second liquid 32 is larger than the refractive index of first liquid 31.
When first voltage V1 (e.g., 40V) is applied among first electrode 37A, second electrode 37B, third electrode 37C, fourth electrode 37D, fifth electrode 37E, sixth electrode 37F, seventh electrode 37G, eighth electrode 37H, and common electrode (counter electrode) 38, first liquid 31 is drawn toward the plurality of peripheral electrodes (all of first electrode 37A to eighth electrode 37H). With the motion of first liquid 31, second liquid 32 is concentrated in the direction of the center of condenser lens 30. As a result, a curvature of a curved plane where first liquid 31 and second liquid 32 having different refractive indices contact becomes large. Therefore, first light 72 can be converged at almost the center of wavelength conversion element 50 by appropriately adjusting the applied voltage.
On the other hand, as illustrated in
As an example of a vehicle to which the above lighting apparatus 1 is mounted as its head lamp, vehicle 100 illustrated in
As illustrated in
As an example of the vehicle having above lighting apparatus 1 as a head lamp, vehicle 100 illustrated in
A light source having high directionality of emission light, such as laser, especially nitride semiconductor laser element, can be used for light source 10, for example. Such light source has higher emission efficiency and smaller emission area than LED or lamp, so that light source 10 can be configured with a compact optical system. Thus, lighting apparatus 1 can be made compact, can be high in efficiency, and can be low in cost.
As a result, a freedom in design upon using lighting apparatus 1 as a head lamp is increased, whereby a novel design, such as a thinner head lamp in vehicle 100 illustrated in
In addition, as illustrated in
Next, a modification of the first exemplary embodiment will be described with reference to
Compared to the lighting apparatus illustrated in
Dichroic mirror 53 transmitting light with a wavelength of 500 nm or lower and reflecting light with a wavelength of 500 nm or higher is provided to be in contact with the surface of base 52, close to condenser 20, in wavelength conversion element 50. Dichroic mirror 53 is formed such that a filter which is a dielectric multilayer film, for example, is formed on a transparent substrate such as glass, or sapphire or aluminum nitride.
In the present modification, power applied to the plurality of electrodes formed on condenser lens 30 is changed to allow first light 71 to enter any one of light conversion portion 51A, light conversion portion 51B, and light conversion portion 51C. For example, first light 71 enters light conversion portion 51B disposed on a principal axis in
In
In this configuration, the phosphor of wavelength conversion element 50 is formed on through-hole 52A, through-hole 52B, and through-hole 52C, each of which has a side face made of an alumina alloy having high optical reflectivity. In addition, dichroic mirror 53 reflecting light emitted from the phosphor is disposed at the light incident side. With this configuration, projection light having high conversion from first light to second light can easily be obtained, and the radiation direction of the projection light can easily be changed.
In the present modification as well, the emission wavelength of light emitted from light source 10 and the material of the wavelength conversion element can be changed in the similar way as in the first exemplary embodiment. In this case, when light emitted from light source 10 has an emission wavelength ranging from 380 nm to 420 nm, the characteristic of dichroic mirror 53 disposed on wavelength conversion element 50 may be set according to emission wavelength such that light with a wavelength of 420 nm or lower is transmitted and light with a wavelength of 420 nm or higher is reflected.
Next, a configuration of a lighting apparatus according to the second exemplary embodiment will be descried with reference to
Semiconductor light-emitting element 11 has a structure in which a semiconductor layer is laminated on a substrate, and semiconductor light-emitting element 11 emits light with a wavelength ranging from 380 nm to 499 nm. Specifically, a semiconductor layer that is nitride of Group III element (Al, Ga, In) is laminated on a substrate that is an n-type GaN substrate in the order of an n-type clad layer, n-type optical guide layer, InGaN quantum well layer, p-type optical guide layer, electron block layer, p-type clad layer, and p-type electrode contact layer.
Optical waveguide 11a, optical waveguide 11b, and optical waveguide 11c, which are formed on semiconductor light-emitting element 11, are made of ridge stripe of semiconductor laser, for example. For example, optical waveguides 11a to 11c are formed with pattern formation with a semiconductor photolithography or dry etching. Specifically, a SiO2 film not illustrated is formed on a surface of a wafer on which a semiconductor layer is laminated with chemical vapor deposition (CVD) or the like. Mask patterning of ridge stripe is performed to this SiO2 film with a photolithography, and a plurality of ridge-like stripe structures are formed with dry etching. With this, a plurality of optical waveguides (optical waveguide 11a, optical waveguide 11b, and optical waveguide 11c) can easily be formed on one semiconductor light-emitting element 11 in the present exemplary embodiment.
Any one or more of metals of Pd, Pt, Ni, Ti, and Au are vapor deposited or patterned to form first electrode 37A, second electrode 37B, and third electrode 37C on the stripe structures. Accordingly, a plurality of electrodes can easily be connected to the plurality of optical waveguides.
First electrode 37A, second electrode 37B, and third electrode 37C can easily electrically be connected to lead pin 16a, lead pin 16b, and lead pin 16c respectively with fine metal wires which are gold wires, and can be electrically isolated from one another.
Package 19 includes base 15b made of iron or copper, for example, and post 15a formed on the base 15b, post 15a being made of iron or copper, for example, and having sub-mount 13 and semiconductor light-emitting element 11 mounted thereon. An aperture is formed on base 15b, and lead pin 16a, lead pin 16b, lead pin 16c, and lead pin 16g are fixed through an insulating material not illustrated. Lead pin 16a, lead pin 16b, lead pin 16c, and lead pin 16g are connected to wiring lines disposed at base 15b at the opposite side of post 15a for connection to controller 90. Common electrode (counter electrode) 38 is formed on sub-mount 13. Common electrode 38 electrically connects the surface of semiconductor light-emitting element 11 opposite to first electrode 37A to lead pin 16g through the fine metal wire.
Cap 17a provided with translucent window 17b is mounted to light source 10 in airtight manner so as to seal semiconductor light-emitting element 11.
As illustrated in
Semiconductor light-emitting element 11 emits laser light having a main wavelength of 405 nm, for example, from emission point 12a, emission point 12b, and emission point 12c, each of which is connected to each of three optical waveguides. Dichroic mirror 53 is configured such that a dielectric multilayer film transmitting light with a wavelength of 430 nm or lower and reflecting light with a wavelength of 430 nm or higher is formed on a transparent substrate made of glass or sapphire.
Projection lens 60 is disposed on wavelength conversion element 50 at the position opposite to condenser lens 40. Projection lens 60 is an optical element including one lens or a lens group including a plurality of lenses, and is set to have high numerical aperture (NA), such as 0.8 or higher, for efficiently receiving fluorescence or emission light, i.e., diffusion light, which is radiated from wavelength conversion element 50.
Next, a method for controlling lighting apparatus 1 according to the present exemplary embodiment will be described with reference to
Controller 90 connected to light source 10 independently applies power to optical waveguides connected to emission point 12a, emission point 12b, and emission point 12c through first electrode 37A, second electrode 37B, and third electrode 37C.
As described above, power is independently applied to first electrode 37A, second electrode 37B, and third electrode 37C, and the amount of the power is adjusted, whereby the radiation direction of projection light emitted from lighting apparatus 1 can optionally be changed. The change in the direction of lighting apparatus 1 can be performed without using a mechanical component. Therefore, the radiation direction of projection light can easily be changed, and durability of lighting apparatus 1 can be enhanced.
The method for supplying power to any one of first electrode 37A, second electrode 37B, and third electrode 37C has been described above. However, the method is not limited thereto. For example, there are a method for supplying power to both of first electrode 37A and second electrode 37B, and a method for supplying power to both of first electrode 37A and second electrode 37B wherein a half of the power to first electrode 37A is supplied to second electrode 37B. With these methods, an optional light distribution pattern can be formed by independently and freely supplying power to first electrode 37A, second electrode 37B, and third electrode 37C.
In the above description of the operation, wavelength conversion element 50 includes phosphor as in the first exemplary embodiment, for example (see the above (Method for generating second light)).
In the above, the emission light of semiconductor light-emitting element 11 may be set as blue light with a wavelength from 430 nm to 500 nm, and light conversion portion 51A, light conversion portion 51B, and light conversion portion 51C of wavelength conversion element 50 may be configured as light conversion portions including phosphor having a main wavelength ranging from 500 nm to 660 nm of the emission light. With this, the first light may be radiated as second light with the wavelength of a part or all of the first light being changed with the phosphor. With this configuration, a part of light emitted from semiconductor light-emitting element 11 can be radiated as second light. In this case, dichroic mirror 53 is desirably designed to have property in consideration of polarizing property so as to transmit first light 71 that is polarized light and to reflect a part of a blue light component of second light 81 that is unpolarized light.
Lighting apparatus 1 according to a third exemplary embodiment of the present disclosure will be described below with reference to
Wavelength conversion element 50 includes base 52 made of an aluminum alloy and formed with apertures 52A, 52B, and 52C into which light conversion portions 51A, 51B, and 51C containing blue phosphor and yellow phosphor are buried, for example. Heat dissipation unit 55 for efficiently dissipating heat generated at the light conversion portions is mounted to base 52 on the position opposite to condenser lens 40. Semiconductor light-emitting element 11 has optical waveguides respectively connected to three emission points 12a, 12b, and 12c, and emits laser light having a main wavelength present within the range of from 400 nm to 410 nm, for example. Collimator lens 25, dichroic mirror 58, and condenser lens 40 are disposed between light source 10 and wavelength conversion element 50. Dichroic mirror 58 is configured such that a dielectric multilayer film transmitting light with a wavelength of 430 nm or lower and reflecting light with a wavelength of 430 nm or higher is formed on a glass plate, the light being incident from the direction of 45 degrees.
First light which is not illustrated and emitted from emission point 12a, emission point 12b, and emission point 12c, passes through collimator lens 25, dichroic mirror 58, and condenser lens 40 to be precisely converged on each of light conversion portion 51A, light conversion portion 51B, and light conversion portion 51C of wavelength conversion element 50.
Controller 90 connected to light source 10 independently applies power to optical waveguides connected to emission point 12a, emission point 12b, and emission point 12c through first electrode 37A, second electrode 37B, and third electrode 37C.
With this configuration, the same lens can be used for the condenser lens for converging the first light and for the condenser lens for collecting the second light, whereby the configuration of the lighting apparatus can be simplified. In addition, heat generated upon the conversion of the first light into the second light can efficiently be dissipated with heat dissipation unit 55 of the wavelength conversion element, whereby durability of the wavelength conversion element can be enhanced.
As described above, power is independently applied to first electrode 37A, second electrode 37B, and third electrode 37C, and the amount of the power is adjusted, whereby the radiation direction of projection light emitted from lighting apparatus 1 can optionally be changed. In this case, lighting apparatus 1 does not include mechanical components as a constitute element. Therefore, the radiation direction of projection light can easily be changed, and durability of lighting apparatus 1 can be enhanced.
The method for supplying power to any one of first electrode 37A, second electrode 37B, and third electrode 37C has been described above. However, the method is not limited thereto. For example, there are a method for supplying power to both of first electrode 37A and second electrode 37B, and a method for supplying power to both of first electrode 37A and second electrode 37B wherein a half of the power to first electrode 37A is supplied to second electrode 37B. With these methods, an optional light distribution pattern can be formed by independently and freely supplying power to first electrode 37A, second electrode 37B, and third electrode 37C.
In the above, the emission light of semiconductor light-emitting element 11 may be set as blue light with a wavelength ranging from 430 nm to 500 nm, and light conversion portions 51A, 51B, and 51C of wavelength conversion element 50 may be configured as light conversion portions including phosphor having a main wavelength ranging from 500 nm to 660 nm of the emission light.
With this, the first light may be radiated as second light with the wavelength of a part or all of the first light being changed with the phosphor. With this configuration, a part of light emitted from semiconductor light-emitting element 11 can be radiated as second light. In this case, dichroic mirror 58 is desirably designed to have property in consideration of polarizing property so as to transmit first light that is polarized light and to reflect a part of a blue light component of second light 81 that is unpolarized light.
In the above second and third exemplary embodiments, the number of the optical waveguides of the semiconductor light-emitting element is set to be three. However, it is not limited thereto. The number of the optical waveguides may be two according to usage. Alternatively, the number of the optical waveguides of the semiconductor light-emitting element may be four or more for enabling light distribution control more freely.
In the first to third exemplary embodiments, an aluminum alloy is used for the material of the base of the wavelength conversion element. However, it is not limited thereto. A material which has high thermal conductivity for exhausting heat generated on the phosphor composing the light conversion portion, and reflects visible light radiated from the light conversion portion may preferably be used. For example, a material formed by performing nickel plating or silver plating on a copper surface may be used.
In the first to third exemplary embodiments, the semiconductor light-emitting element is specified as semiconductor laser. However, a semiconductor light-emitting element which radiates emission light having high directionality, such as a superluminescent diode, may be used.
In the first to third exemplary embodiments, light emitted from the lighting apparatus is white light. However, it is not limited to white light and it is applicable to a light source having low color temperature, such as a light source with a color close to orange or pale yellow color, which is called bulb color, or a light source having high color temperature such as a light source with a color close to blue, on the contrary.
The lighting apparatus, vehicle, and control method for the lighting apparatus of the present disclosure provide effects of easily performing a light distribution control, and improving durability of the lighting apparatus, and thus useful.
Number | Date | Country | Kind |
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2013-163881 | Aug 2013 | JP | national |
Number | Date | Country | |
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Parent | PCT/JP2014/003339 | Jun 2014 | US |
Child | 14997445 | US |