The section headings used herein are for organizational purposes only and should not to be construed as limiting the subject matter described in the present application in any way.
Large area substrate deposition systems have been used for processing flexible web substrates and rigid panel substrates of numerous types of substrate materials for many years. Many known systems are designed to process plastic web substrates and rigid panel glass substrates. The web substrates or rigid panels are passed directly above a linear deposition source. Known linear deposition sources that are suitable for evaporating materials on a web substrate or on a rigid panel substrate include a boat-shaped crucible, which is typically formed of a refractory material for containing deposition source materials. The crucible is placed in the interior of a vapor outlet tube. The vapor outlet tube functions simultaneously as a vaporizing space and as a space to distribute the vapors. One or more vapor outlet openings are arranged linearly along the source.
The present teaching, in accordance with preferred and exemplary embodiments, together with further advantages thereof, is more particularly described in the following detailed description, taken in conjunction with the accompanying drawings. The skilled person in the art will understand that the drawings, described below, are for illustration purposes only. The drawings are not necessarily to scale, emphasis instead generally being placed upon illustrating principles of the teaching. The drawings are not intended to limit the scope of the teachings in any way.
Reference in the specification to “one embodiment” or “an embodiment” means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the teaching. The appearances of the phrase “in one embodiment” in various places in the specification are not necessarily all referring to the same embodiment.
It should be understood that the individual steps of the methods of the present teachings may be performed in any order and/or simultaneously as long as the teaching remains operable. Furthermore, it should be understood that the apparatus and methods of the present teachings can include any number or all of the described embodiments as long as the teaching remains operable.
The present teaching will now be described in more detail with reference to exemplary embodiments thereof as shown in the accompanying drawings. While the present teaching is described in conjunction with various embodiments and examples, it is not intended that the present teaching be limited to such embodiments. On the contrary, the present teaching encompasses various alternatives, modifications and equivalents, as will be appreciated by those of skill in the art. Those of ordinary skill in the art having access to the teaching herein will recognize additional implementations, modifications, and embodiments, as well as other fields of use, which are within the scope of the present disclosure as described herein.
The present teaching relates generally to apparatus and methods for producing a flux of source material vapor for deposition on a substrate. Some aspects of the present teaching relate to linear deposition sources that are suitable for producing a flux of source material vapor for depositing material on a web substrate, a rigid panel substrate, or another type of an elongated workpiece. Other aspects of the present teaching relate to linear deposition sources that are suitable for producing a flux of source material vapor for depositing material on a substrate holder that supports a plurality of conventional substrates, such as semiconductor substrates.
In many embodiments of the present teaching, the methods and apparatus relate to deposition by evaporation. The term “evaporation” as used herein means to convert the source material to a vapor and includes the normal use of several terms in the art, such as evaporation, vaporization, and sublimation. The source material being converted to a vapor can be in any state of matter. In many embodiments, the apparatus and method of the present teaching are used to co-evaporate two or more different materials onto a substrate, such as a web substrate or a rigid panel substrate. In some embodiments, the apparatus and method of the present teaching are used to evaporate a single material onto a substrate, such as a web substrate or a rigid panel substrate. Using a single deposition material in multiple or partitioned crucibles will add redundancy and will increase the flux rate.
One application of the present teaching relates to methods and apparatus for co-deposition of copper, indium, and gallium onto a web substrate or a rigid panel substrate. Compounds of copper indium diselenide (CIS compounds) that have gallium substituted for all or part of the indium are known as copper indium gallium diselenide compounds (CIGS compounds). CIGS compounds are commonly used to fabricate photovoltaic cells. In particular, CIGS compounds are commonly used as absorber layers in thin-film solar cells. These CIGS compounds have a direct band gap which permits strong absorption of solar radiation in the visible region of the electromagnetic spectrum. CIGS photovoltaic cells have been demonstrated to have high conversion efficiencies and good stability as compared to commonly used photovoltaic cells with other types of absorber layer compounds, such as cadmium telluride (CdTe) and amorphous silicon (a-Si).
CIGS absorbing layers are typically p-type compound semiconductor layers with good crystallinity. Good crystallinity is generally required to achieve desired charge transport properties necessary for high efficiency photovoltaic operation. In practice, the CIGS absorbing layer must be at least partially crystallized in order to achieve high efficiency photovoltaic operation. Crystallized CIGS compounds have a crystallographic structure which can be characterized as either chalcopyrite or sphalerite depending on the deposition temperature used to form the CIGS compound.
CIGS compounds can be formed by various techniques. One method for forming CIGS compounds uses chemical precursors. The chemical precursors are deposited in thin films and are then subsequently annealed to form the desired CIGS layer. When CIGS precursor materials are deposited at a low temperature, the resulting CIGS thin films are amorphous or only weakly crystallized. The CIGS thin films are then annealed at elevated temperatures to improve the crystallization of the CIGS compound in order to provide the desired charge transport properties.
However, at the elevated temperatures necessary to cause partial crystallization of the CIGS thin films, the selenium in the deposited thin film is more volatile than the other elements. Consequently, selenium is often added while annealing the precursor layers to improve crystallized and to provide the CIGS compound with the desired composition and stoichiometry. This method of forming CIGS thin film compounds is relatively time consuming and requires large volumes of selenium in the vapor phase, which adds to the manufacturing costs.
Another method for forming CIGS compounds uses vacuum evaporation. CIGS photovoltaic cells fabricated by co-evaporation can have high photovoltaic conversion efficiencies compared to CIGS photovoltaic cells fabricated with precursor materials. In this method, copper, indium, gallium, and selenium are co-evaporated onto a substrate. Co-evaporation allows for precise control of the thin film stoichiometry and allows for compositional grading in the thin film light-absorbing layer. Therefore, co-evaporation can be used to precisely tailor the bandgap in order to achieve optimum photovoltaic performance. However, co-evaporation of copper, indium, gallium, and selenium is a process technique that can be difficult to use on an industrial scale because it is difficult to evaporate materials uniformly over large surface areas.
One aspect of the present teaching is to provide deposition sources, systems, and methods of operating such sources and systems to efficiently and controllably provide multiple vaporized source materials for fabrication of numerous types of devices, such as CIGS photovoltaic cells. Another aspect of the present teaching is to provide deposition sources, systems, and methods of operating such sources and systems to efficiently and controllably provide a single vaporized source material for fabrication of numerous types of devices, such as organic light-emitting diode (OLED) devices. One skilled in the art will appreciate that although some aspects of the present teachings are described in connection with the fabrication of CIGS photovoltaic cells and OLED devices, the teachings in this disclosure apply to any other type of device that can be fabricated using evaporated materials.
A housing 108 contains the plurality of crucibles 102. The housing 108 is formed of stainless steel or a similar material. In some embodiments, fluid cooling channels are positioned along the housing 108. The housing 108 also includes a sealing flange 110 that attaches the housing 108 to a vacuum chamber (not shown). One feature of the linear deposition source 100 is that the crucibles are outside of the vacuum chamber and, therefore, they are easily refilled and serviced, thereby increasing availability. A body 112 including the plurality of conductance channels 104 and the plurality of nozzles 106 extends past the sealing flange 110 of the housing 108. In some embodiments, fluid cooling channels are positioned along the body 112.
In the embodiment shown in
One skilled in the art will appreciate that numerous types of crucibles can be used. For example, at least some of the plurality of crucibles can include at least one crucible formed inside another crucible as described in connection with
One or more crucible heaters 114 are positioned in thermal communication with the plurality of crucibles 102. The crucible heaters 114 are designed and positioned to increase the temperature of the plurality of crucibles 102 so that each of the plurality of crucibles 102 evaporates its respective deposition source material into a respective one of the plurality of conductance channels 104. Some crucible heaters 114 are required to heat the evaporation source material to very high temperatures. Such crucible heaters can be formed of graphite, silicon carbide, refractory materials, or other very high melting point materials. The crucible heaters 114 can be one single heater or can be a plurality of heaters. For example, in one embodiment, each of a plurality of crucible heaters is individually controllable so that a respective one of the plurality of crucible heaters is in thermal communication with a respective one of each of the plurality of crucibles 102.
The crucible heaters 114 can be any type of heater. For example, the crucible heaters 114 can be resistive heaters as shown in
The crucible heaters 114 or separate conductance channel heaters are positioned in thermal communication with at least one of the plurality of conductance channels 104 so that the temperature of each of the plurality of conductance channels 104 is raised above the condensation point of deposition source materials passing through the particular conductance channel. Conductance channel heaters are described in connection with
Crucible heaters 114 are used to increase the temperature of the three crucibles 102 so the crucibles evaporate the deposition material into the conductance channel 104′. The crucible heaters 114 or a separate conductance channel heater is positioned in thermal communication with the conductance channel 104′ so that the temperature of the conductance channel 104′ is raised above the condensation point of deposition source materials passing through the conductance channel 104′. The conductance channel heater is described in connection with
An input of each of the plurality of nozzles 106 is coupled to an output of the conductance channel 104′ so that evaporated deposition material is transported from the plurality of crucibles 102 through the conductance channel 104′ to the plurality of nozzles 106 where the evaporated deposition material is ejected from the plurality of nozzles 106 to form a deposition flux.
The single crucible 202 can have a single compartment that is designed for one type of deposition source material. Such a crucible coupled to the plurality of conductance channels 204 will have relatively high deposition flux throughput. Alternatively, the single crucible 202 can have a plurality of partitions 210 that partially isolate sections of the crucible 202 where each of the partially isolated sections is dimensioned for positioning one of a plurality of deposition source materials. The plurality of deposition source materials can be the same material or can be a different material. Using the same source material in each of the partially isolated sections will add redundancy and will increase the flux rate. In embodiments where the single crucible 202 includes a plurality of partially isolated sections, an input of each of the plurality of conductance channels 204 is positioned proximate one of the plurality of partially isolated sections.
A heater 212 is positioned in thermal communication with the single crucible 202. The heater 212 increases the temperature of the crucible 202 so that the crucible evaporates the at least one deposition material into the plurality of conductance channels 204 or into the single conductance channel 204′ (
A heat shield 214 is positioned proximate to the crucible 202 and to the plurality of conductance channels 204 to provide at least partial thermal isolation of the crucible 202 and of the plurality of conductance channels 204. In some embodiments, the heat shield 214 is designed and positioned to control the temperature of one section of the crucible 202 relative to another section of the crucible 202. Also, in some embodiments, the heat shield 214 is designed and positioned in order to provide at least partial thermal isolation of at least one of the plurality of conductance channels 204 relative to at least one other conductance channels 204 so that different temperatures can be maintained in at least two of the plurality of conductance channels 204. In this embodiment, at least two of the plurality of conductance channels 204 can be shielded with heat shielding material having different thermal properties.
The plurality of nozzles 206 are coupled to the plurality of conductance channels 204. Evaporated deposition materials are transported from the single crucible 202 through the plurality of conductance channels 204 to the plurality of nozzles 206 where the evaporated deposition material is ejected from the plurality of nozzles 206 to form a deposition flux.
The linear sources of the present teaching are well suited for evaporating one or more different deposition source materials on large area workpieces, such as web substrates and rigid panel substrates. The linear geometry of the sources makes them well suited for processing wide and large area workpieces, such as web substrates and rigid panel substrates used for photovoltaic cells because the source can provide efficient and highly controllable vaporized material over a relatively large area.
One feature of the linear deposition sources of the present teaching is that they are relatively compact. Another feature of the linear deposition sources of the present teaching is that they uses common heaters and common heat shielding materials for each the plurality of deposition sources and for each of the plurality of conductance channels, which improves many equipment performance metrics, such as the size, equipment cost, and operating costs.
For example, in one embodiment, one or more of the plurality of crucibles 102 (
Referring to
The expansion link 500 shown in
In one embodiment, the outer layer 652 is carbon fiber board. For example, the outer layer 652 can be carbon fiber board with a thickness that is in a range of 0.02 to 0.08 inches thick. In some embodiments, the carbon fiber board is coated with a conductive material, such as a metal carbide on at least one surface.
The heat shield 650 also includes a plurality of heat resistant material layers 654 on the top and bottom surfaces and on the side surfaces. In some embodiments, the heat resistant material layers 654 can be heat resistance tiles. For example, there can be more than five, more than ten, or more than 20 heat resistant material layers 654 positioned on the top, bottom, and/or side surfaces of the heat shield 650. In some embodiments, at least some of the plurality of heat resistant material layers 654 has a thickness that is in the range of 0.001 inches to 0.020 inches thick. In some embodiments, a reflective material is positioned on at least one outer surface of at least one of the plurality of heat resistant material layers 654.
In some embodiments, the heat resistant material layers 654 are one of various types of refractory metal foil layers. Also, in some embodiments, the heat resistant material layers are graphite material layers. Numerous types of graphite material layers can be used. For example, the graphite material layers can be formed of Grafoil®, or any other type of flexible graphite material that is made from pure, natural graphite flake. Grafoil® is well suited for uses as a heat shielding material because it is resistant to heat, fire, corrosion and aggressive chemicals.
In some embodiments, the heat shield 650 includes a rigid material 656 that is positioned between some of the plurality of heat resistant material layers 654. The rigid material 656 is typically thicker than the heat resistant material layers 654. The rigid material 656 provides mechanical strength and corrosion protection to the heat shield. Numerous types of rigid materials can be used that can be the same as or different than the rigid material positioned on the outer surface of at least one of the plurality of heat resistant material layers 654. For example, the rigid material can be one of many types of carbon fiber board, such as carbon fiber cloth with a carbon matrix that is commonly referred to in the industry as CFC or carbon/carbon. In one embodiment, the carbon fiber board has a thickness that is in a range of 0.02 and 0.08 inches thick. In some embodiments, the carbon fiber board is coated with a conductive material, such as a metal carbide on at least one surface. In addition, the rigid material can be a non fiber-reinforced graphite board.
Thus, in various embodiments, rigid materials 652, 656 can be positioned on outer and/or inner surfaces of the heat resistant material layers 654. For example, in one specific embodiment, the heat shield 650 includes top and bottom surfaces that includes the following layers: (1) at least one layer of rigid material coated with a refractory ceramic material, for example, one or two layers of Niobium carbide coated carbon fiber board or similar materials; (2) a plurality of refractory metal foil and/or graphite layers, for example, 2-20 refractory metal foil and/or graphite layers; (3) at least one layer of rigid material, for example, one or two layers of carbon fiber board; (4) a plurality of refractory metal foil and/or graphite layers, for example, 2-20 refractory metal foil and/or graphite layers; and (5) at least one layer of rigid material coated with a refractory ceramic material, for example, one or two layers of Niobium carbide coated carbon fiber board or similar materials.
Referring to
In various other embodiments, the first section 602 of the heat shield 600 can include a plurality of separate heat shields where a respective one of the plurality of separate heat shields 600 surrounds a respective one of the plurality of crucibles 102. Each of the plurality of separate heat shields can be the same or can be a different heat shield. For example, crucibles that are used to heat higher temperature deposition source materials can be formed of different or thicker heat shielding materials with different thermal properties.
The second section 604 of the heat shield 600 is positioned proximate to the plurality of conductance channels 104 in order to provide at least partial thermal isolation of the plurality of conductance channels 104 from the plurality of crucibles 102. Each of the plurality of conductance channels 104 can be shielded by a separate heat shield or a single heat shield can be used. In some embodiments, the second section 604 of the heat shield 600 is positioned in order to provide at least partial thermal isolation of at least one of the plurality of conductance channels 104 relative to at least one other conductance channel. In other words, the design and positioning of the second section 604 of the heat shield 600 can be chosen to allow a different operating temperature in at least one of the plurality of conductance channels 104 relative to at least one other of the plurality of conductance channels 104. In these embodiments, at least two of the plurality of conductance channels 104 can be shielded with heat shielding material having different thermal properties. For example, at least two of the plurality of conductance channels 104 can be shielded by different heat shielding materials, different heat shielding thickness, and/or different proximities of the heat shielding material to particular conductance channels.
The heat shield 600 is exposed to very high temperatures during normal operation. Some heat shields according to the present teachings are constructed with at least one surface being formed of a low emissivity material or having a low emissivity coating that reduces the emission of thermal radiation. For example, an inner or outer surface of the heat shield 600 can be coated with a low emissivity coating or any other type of coating that reduced heat transfer. Any such coating is usually designed to maintain constant emissivity over the operational lifetime of the source.
The heat shield 600 also expands and contracts at different rates compared to the housing 108 and the body 112 and compared to components in the housing 108 and body 112. In one embodiment, the heat shield 600 is movably attached to at least one of the housing 108 and the frame 500 (
The source 100 shown in
In some embodiments, the spacing of the plurality of nozzles 106 is chosen to obtain high material utilization in order to lower the operating cost of the deposition source 100 and to increase the process time and availability between service intervals. Also, in some embodiments, the spacing of the plurality of nozzles 106 is chosen to provide a desired overlap of deposition flux from the plurality of nozzles 106 in order to achieve a predetermine mixture of evaporated materials.
In one embodiment, at least one of the plurality of nozzles 106 is positioned at an angle relative to the normal angle from the top surface 160 of the conductance channels 104 in order to achieve certain process goals. For example, in one embodiment, at least one of the plurality of nozzles 106 is positioned at an angle relative to the normal angle from the top surface 160 of the conductance channels 104 that is chosen to provide a uniform deposition flux across the surface of the substrates or workpieces being processed. Also, in some embodiments, at least one of the plurality of nozzles 106 is positioned at an angle relative to the normal angle from the top surface 160 of the conductance channels 104 that is chosen to provide a desired overlap of deposition flux from the plurality of nozzles 106 to achieve a predetermine mixture of evaporated materials.
The geometry of some or all of the nozzles 106 can be chosen to improve uniformity. For example, at least one of the plurality of nozzles 106 can include an output aperture that is shaped to pass a non-uniform deposition flux. The geometry of the tube 170 corresponding to one of the plurality of nozzles 106 can be different from a geometry of the tube 170 corresponding to at least one other of the plurality of nozzles 106.
A spacing of the plurality of nozzles 106 can be non-uniform to achieve certain process goals. For example, a spacing of the plurality of nozzles 106 can be closer proximate to an edge of the body 112 than a spacing of the plurality of nozzles 106 proximate to a center of the body 112. A spacing of the plurality of nozzles 106 can be chosen to achieve ejection of substantially uniform deposition material flux from the plurality of nozzles 106. Also, a spacing of the plurality of nozzles 106 can be chosen to increase utilization of deposition material. Also, a spacing of the plurality of nozzles 106 can be chosen to provide a desired overlap of deposition flux ejected from the plurality of nozzles 106.
The dimensions of the tubes 170, such as the length and diameter of the tubes 170, determine the amount of deposition material that is supplied from the conductance channel 104 to the corresponding nozzles 106. In addition, the positioning of the tubes 170, such as the distance that the tubes 170 are positioned in the conductance channel 104, also determines the amount of deposition material that is supplied from the conductance channel 104 to the corresponding nozzle 106.
For example, changing the diameter of the tubes 170 changes the deposition flux pattern emanating from the nozzle 106. The length of the tubes 170 is generally chosen to match the overall flow resistance and design of the tubes 170. In some embodiments, longer tubes 170 that penetrate further into the conductance channel 104 will supply less evaporated deposition material to the corresponding nozzle 106. In various embodiments, the geometry and position of particular tubes 170 can be the same or can be different. In one embodiment, at least two of the plurality of tubes 170 can have different lengths and/or different geometries in order to obtain a particular conductance through each of the plurality of tubes 170 that achieves certain process goals. For example, tubes 170 with different dimensions can be used to compensate for pressure differentials in the source 100 from the body 112 near the sealing flange 110 to the end of the body 112.
Thus, one feature of the deposition source 100 of the present teaching is that the geometry and positioning of the tubes 170 can be chosen to precisely control the quantity of evaporated source material supplied to each of the plurality of nozzles 106 without changing the distribution of the evaporated material emanating from the plurality of nozzles 106. For example, a geometry and position of particular tubes 170 can be chosen to achieve certain process goals, such as a predetermined deposition flux from particular nozzles or from the plurality of nozzles 106.
In some embodiments, at least one of the plurality of nozzles 106 extends above the top surface of the conductance channel 104 in order to prevent vapor condensation and material accumulation building up over time. Nozzles can also be positioned to achieve a desired deposition flux distribution pattern. Individual nozzle heaters can be positioned proximate to one or more of the plurality of nozzles 106 to control the temperature of the vaporized material emanating from the nozzles 106 to prevent condensation and material accumulation. In other embodiments, at least one of the plurality of nozzles 106 is positioned below the top surface 160 of the plurality of conductance channels 104 in order to conduct the desired amount of heat from the heater and the plurality of conductance channels 104 and/or to achieve a desired deposition flux distribution pattern.
At least one of the plurality of nozzles 106 can be formed of certain materials and can include certain coatings to improve performance. For example, the nozzle 106 can be formed of a material having a thermal conductivity that results in a substantially uniform operating temperature which reduces spitting of deposition materials from the nozzle. For example, the nozzle 106 can be formed of graphite, silicon carbide, a refractory material, or other very high melting point materials. In some embodiments, the nozzle 106 is designed to reduce thermal gradients experienced by materials passing through the nozzle 106. In addition, the nozzle 106 can be designed to minimize overall radiation losses. The nozzle 106 can include a low emissivity coating on at least one outer surface.
The nozzle 106 includes an aperture 180 for passing the evaporated source material from the associated conductance channel 104. The output aperture 180 of at least one of the plurality of nozzles can be positioned at an angle relative to a normal angle to a top surface of the conductance channel 104 as described in connection with
The aperture 180 is designed to eject a desired plume of evaporated material. A generally round aperture 108 is shown in the nozzle 106 of
In some embodiments, at least one of the plurality of nozzles 106 has an aperture 180 that is shaped to pass a non-uniform deposition flux. In these embodiments, at least some of the plurality of apertures 180 can be shaped to pass non-uniform deposition flux that combines to form a desired deposition flux pattern. For example, the desired combined deposition flux pattern can be a uniform deposition flux pattern over a predetermined area.
In operation, a method of generating deposition flux from multiple deposition sources includes heating a plurality of crucibles 102 that each contains a deposition source material so that each of the plurality of crucibles 102 evaporates deposition material. The method can include independently controlling separate crucible heaters to achieve different crucible temperatures for each deposition source material. The method can also include shielding each of the plurality of crucibles 102 so that different temperatures can be maintained in particular crucibles.
Deposition material from each of the plurality of crucibles 102 transports through the conductance channel 104′ in the body 112. In embodiments including a plurality of conductance channels 104, deposition material from each of the plurality of crucibles 102 transports through respective conductance channels 104 in the body 112 without intermixing the deposition materials evaporated from any of plurality of crucibles 102. The conductance channels 104 are heated so that the vaporized deposition material does not condense before emanating from the nozzles 106. The conductance channels 104 can be separately heated so as to achieve different temperatures for at least two of the plurality of conductance channels 104. Each of the plurality of conductance channels 104 can be shielded so that different temperatures can be maintained in different conductance channels 104. Many methods include providing movable components and space for thermal expansion of heater and heat shielding material proximate to the plurality of crucibles 102 and proximate to the plurality of conductance channels 104.
Evaporated deposition material is transported from the conductance channel 104′ or from each of the plurality of conductance channels 104 to respective ones of the plurality of nozzles 106. In various embodiments, the evaporated deposition material is transported from the conductance channel 104′ or from each of the plurality of conductance channels 104 to a respective one of the plurality of nozzles 106 through a respective one of a plurality of tubes 170 or other structures that control the flow of the deposition material.
In various embodiments of the method of the present teaching, the flow of the deposition material through the plurality of nozzles 106 is controlled by using tubes with varying length, geometry, and/or position of the tube inlet relative to the conductance channel 104. The length, geometry, and/or position of the tube inlet relative to the conductance channel 104 are chosen to achieve certain process goals such as uniform deposition flux and/or high deposition material utilization.
The plurality of nozzles 106 then passes the evaporated deposition material, thereby forming a deposition flux. The method can include selecting a spacing of the plurality of nozzles 106 to achieve certain process goals, such as uniform deposition flux from the plurality of nozzles 106 and/or high deposition material utilization.
While the applicant's teaching are described in conjunction with various embodiments, it is not intended that the applicant's teaching be limited to such embodiments. On the contrary, the applicant's teaching encompass various alternatives, modifications, and equivalents, as will be appreciated by those of skill in the art, which may be made therein without departing from the spirit and scope of the teaching.
This application is a continuation-in-part of U.S. patent application Ser. No. 12/628,189, file Nov. 30, 2009, entitled Linear Deposition Source, which claims priority to both U.S. Provisional Patent Application Ser. No. 61/156,348 filed Feb. 27, 2009, entitled “Deposition Sources, Systems, and Related Methods for Co-Depositing Copper, Indium, and Gallium,” and US. Provisional Application Ser. No. 61/138,932 filed Dec. 18, 2008, entitled “Deposition Sources, Systems, and Related Methods for Co-Depositing Copper, Indium, and Gallium.” The entire specifications of U.S. patent application Ser. No. 12/628,189, U.S. Provisional Application Ser. No. 61/156,348 and U.S. Provisional Application Ser. No. 61/138,932 are incorporated herein by reference.
Number | Date | Country | |
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61156348 | Feb 2009 | US | |
61138932 | Dec 2008 | US |
Number | Date | Country | |
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Parent | 12628189 | Nov 2009 | US |
Child | 12818101 | US |