1. Technical Field
The present invention relates to a linear light-emitting device in which an electroluminescence element is used.
2. Background Art
In recent years, among many kinds of flat-face-type display devices, high expectations have been drawn to display devices using electroluminescence elements. The display device using the El elements has such characteristics that it exerts a spontaneous light emitting property, is superior in visibility, has a wide viewing angle and is fast in response. Moreover, the currently developed EL elements include inorganic EL elements that use an inorganic material as an illuminant and organic EL elements that use an organic material as an illuminant.
In the inorganic EL element, for example, an inorganic phosphor such as zinc sulfide is used as the luminescent material, and electrons accelerated by a high electric field such as 106 V/cm are allowed to collide with the luminescence center of the phosphor so as to be excited, and light is emitted as those electrons are relaxed. Moreover, the inorganic EL elements include dispersion-type EL elements in which a phosphor layer formed by dispersing powdered phosphor in a polymer organic material or the like is prepared, with electrodes being formed on the upper and lower sides thereof, and thin-film-type EL elements in which two layers of dielectric layers are formed between a pair of electrodes, and a thin-film phosphor layer, sandwiched between the two dielectric layers, is formed. Among these, the former dispersion-type EL elements have low luminance and a short service life, although they are easily manufactured, with the result that the application thereof has been limited. In contrast, in the latter thin-film-type EL elements, those elements having a double insulating structure, proposed by Inokuchi, et al. in 1974, have been proved to have high luminance and a long service life, and have been put into practical use as in-vehicle displays and the like, as described in Japanese Patent Laid-open Publication No. 52-33491.
Conventional inorganic EL elements will be described with reference to
Dielectric materials to be used as the dielectric layers 53 and 54 preferably have a high dielectric constant, with high insulating resistance and high withstand voltage, and in general, dielectric materials having a perovskite structure, such as Y2O3, Ta2O5, Al2O3, Si3N4, BaTiO3, SrTiO3, PbTiO3, CaTiO3 and Sr(Zr, Ti)O3, are used. In general, inorganic phosphor materials to be used as the phosphor layer 54, on the other hand, have a structure in which an insulating substance crystal is used as a host crystal that is doped with an element serving as a luminescence center. Since those materials that are stable physically as well as chemically are used as the host crystal, the inorganic EL element is superior in reliability, and achieves a service life for 30,000 hours or more. For example, the phosphor layer is mainly composed of ZnS, and doped with a transition metal element and a rare-earth element, such as Mn, Cr, Tb, Eu, Tm and Yb, so that the light emission luminance can be improved, as described in Japanese Patent Publication No. 54-8080
In general, a compound semiconductor consisting of Group 12 and Group 16, such as ZnS, to be used as the phosphor layer 54, has a polycrystalline structure. For this reason, there are many crystal grain boundaries in the phosphor layer 54. Since these crystal grain boundaries serve as scattering bodies for electrons accelerated by an electric field application, the exciting efficiency of the luminescence center is extremely lowered. Moreover, in the crystal grain boundaries, a lattice strain becomes greater due to deviations and the like of the crystal orientation, with the result that there are many non-irradiation recombination centers that give adverse effects to the EL light emission. Because of these influences, the light emission luminance of the inorganic EL element is low, failing to be practically used.
In order to solve the above-mentioned problems, methods for enlargement of the grain size and the improvement of the crystallinity of the crystal grain diameter of the phosphor layer have been proposed. In accordance with a technique, as described in Japanese Patent Laid-open Publication No. H06-36876, an inorganic EL element is designed so that a first electrode has a specific crystal orientation, a first dielectric layer to be laminated thereon has a crystal orientation equivalent to that of the first electrode and a phosphor layer to be further laminated thereon has a crystal orientation equivalent to that of the first dielectric layer; thus, the crystal grain boundary relative to the thickness direction is suppressed so that light emission luminance is improved. Moreover, in accordance with a technique, as described in Patent Laid-open Publication No. H06-196262, in the phosphor layer to which a rare-earth element has been added, the number of crystal growing cores in the initial growing period is set to a uniform and appropriate value by specifying the concentration of the rare earth element. With this arrangement, pillar-shaped crystals having uniformed particle sizes can be formed from the initial stage of the growth so that the light emission luminance can be improved.
In the case where the above-mentioned inorganic EL element is utilized as a backlight for use in a high quality display device such as a television, luminance as high as 300 cd/cm2 is required. Although the above-mentioned proposal provides a certain degree of effects, the light emission luminance is 150 cd/cm2, which is still an insufficient level. Moreover, upon light emission, it is normally necessary to apply a voltage of several 100 V. Moreover, in order to maintain the light emission, it is necessary to apply a high frequency AC voltage with several 10 kHz.
An object of the present invention is to provide a linear light-emitting device that is capable of emitting light at a low voltage, and has high luminance and high efficiency.
A linear light-emitting device according to the present invention includes: a pair of first and second linear electrodes opposing each other; and
a linear phosphor layer sandwiched between the paired electrodes,
wherein at least one of the paired first and second electrodes is a transparent electrode, and the phosphor layer has a polycrystalline structure made from a first semiconductor substance, with a second semiconductor substance different from the first semiconductor substance being segregated on a grain boundary of the polycrystalline structure.
The phosphor layer may have an electric resistance value between the first and second electrodes that is varied in a longitudinal direction.
The phosphor layer may be divided into a plurality of regions by a plurality of insulators placed between the paired electrodes.
The phosphor layer may have a film thickness that is varied in the longitudinal direction.
The linear light-emitting device may further include an electric resistance adjusting layer that is formed so as to be sandwiched between at least either one of the first and second electrodes and the phosphor layer, and has an electric resistance value that is varied in the longitudinal direction. The electric resistance adjusting layer may have a film thickness that is varied in the longitudinal direction.
The transparent electrode may have a terminal to be connected to a power supply that is formed on one of end portions of two ends thereof in the longitudinal direction.
The first semiconductor substance and the second semiconductor substance may have semiconductor structures with mutually different conductive types. The first semiconductor substance may have an n-type semiconductor structure and the second semiconductor substance may have a p-type semiconductor structure.
The first semiconductor substance and the second semiconductor substance may be compound semiconductors respectively. The first semiconductor substance may be a compound semiconductor consisting of Group 12 and Group 16.
The first semiconductor substance may have a cubic crystal structure.
The first semiconductor substance includes at least one kind of element selected from the group consisting of Cu, Ag, Au, Ir, Al, Ga, In, Mn, Cl, Br, I, Li, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm and Yb.
The polycrystalline structure, made from the first semiconductor substance, may have an average crystal grain size in a range from 5 to 500 nm.
The second semiconductor substance includes at least one kind of compound selected from the group consisting of Cu2S, ZnS, ZnSe, ZnSSe, ZnSeTe, ZnTe, GaN and InGaN.
The first semiconductor substance may be a zinc-based material containing simple zinc. In this case, at least one of the electrodes is preferably made from a material containing zinc. Here, the material containing zinc that forms one of the electrodes is mainly composed of zinc oxide, and may contain at least one kind selected from the group consisting of aluminum, gallium, titanium, niobium, tantalum, tungsten, copper, silver and boron.
A linear light-emitting device according to the present invention includes: a pair of first and second linear electrodes opposing each other; and
a linear phosphor layer sandwiched between the paired electrodes,
wherein at least one of the paired first and second electrodes is a transparent electrode, and the phosphor layer has a p-type semiconductor and an n-type semiconductor.
The phosphor layer may have a structure in which n-type semiconductor particles are dispersed in a medium made from a p-type semiconductor. The phosphor layer may be formed by an aggregated body of n-type semiconductor particles, with the p-type semiconductor being segregated between the particles.
The n-type semiconductor particles may be electrically jointed to the first and second electrodes through the p-type semiconductor.
The phosphor layer may have an electric resistance value between the first and second electrodes that is varied in a longitudinal direction.
The phosphor layer may be divided into a plurality of regions by a plurality of insulators placed between the paired electrodes.
The phosphor layer may have a film thickness that is varied in the longitudinal direction.
The linear light-emitting device may further include an electric resistance adjusting layer that is formed so as to be sandwiched between at least either one of the first and second electrodes and the phosphor layer, and has an electric resistance value that is varied in the longitudinal direction.
The electric resistance adjusting layer may have a film thickness that is varied in the longitudinal direction.
The transparent electrode may have a terminal to be connected to a power supply that is formed on one of end portions of two ends thereof in the longitudinal direction.
The n-type semiconductor and the p-type semiconductor may be compound semiconductors respectively. The n-type semiconductor may be a compound semiconductor consisting of Group 12 and Group 16. The n-type semiconductor may be a compound semiconductor consisting of Group 12 and Group 16. The n-type semiconductor may be a chalcopyrite type compound semiconductor.
The n-type semiconductor may be at least one kind of compound selected from the group consisting of ZnS, ZnSe, ZnSSe, ZnSeTe, ZnTe, GaN and InGaN.
The n-type semiconductor may be a zinc-based material containing zinc. In this case, at least either one of the first and second electrodes is preferably made from a material containing zinc. The material containing zinc that forms one of the electrodes is mainly composed of zinc oxide, and preferably contains at least one kind selected from the group consisting of aluminum, gallium, titanium, niobium, tantalum, tungsten, copper, silver and boron.
The linear light-emitting device may further include a supporting substrate that faces at least one of the electrodes and supports the device. In addition, the linear light-emitting device may further include a color conversion layer that faces the respective electrodes, and is placed in front of the direction in which light is emitted.
A plane light source according to the present invention includes the linear light-emitting device described above; and
a light guide plate that reflects linear light outputted from the linear light-emitting device to form planar light.
In accordance with the present invention, it becomes possible to provide a linear light-emitting device that uses a light-emitting element having a long service life and high light emission luminance.
The present invention will become readily understood from the following description of preferred embodiments thereof made with reference to the accompanying drawings, in which like parts are designated by like reference numeral and in which:
A best mode for carrying out the invention will be described with reference to the attached drawings. Here, in the drawings, those members that are substantially the same are indicated by the same reference numerals, and the description thereof is not given.
Moreover, in the linear light-emitting device 10, the transparent electrode 2 and the back electrode 4 are electrically connected to each other with a DC power supply 5 interposed therebetween. When power is supplied from the DC power supply 5, a potential difference is exerted between the transparent electrode 2 and the back electrode 4 so that a voltage is applied on the phosphor layer 3. Thus, the phosphor layer 3, disposed between the transparent electrode 2 and the back electrode 4, is allowed to emit light, and the light transmits through the transparent electrode 2 and is extracted from the linear light-emitting device 10.
Here, not limited by the above-mentioned structure, the following modifications may be made on demand: a plurality of dielectric layers are formed between the electrode and the phosphor layer in order to regulate the electric current, a driving operation is carried out by using an AC power supply, a transparent back electrode is used, a black electrode is used as the back electrode, a structure that seals the entire or a part of the linear light-emitting device 10 is further provided, and a structure for converting the color of light emission from the phosphor layer 3 is placed on the front side of the light emitting direction. For example, a blue-color phosphor layer and a color-converting layer that converts blue color into green color and red color can be combined with each other to produce a white-color linear light-emitting device.
The respective structures of this linear light-emitting device will be described below.
Here,
A material that can support respective layers formed thereon is used as the substrate 1. Moreover, the material needs to have a light transmitting property to a light wavelength that is emitted from an illuminant of the phosphor layer 3. Examples of the material include glass, such as corning 1737, quartz, ceramics and the like. In order to prevent alkaline ion or the like, contained in normal glass, from giving adverse effects to the light-emitting element, non-alkaline glass, or soda lime glass, formed by coating alumina or the like as an ion barrier layer on the glass surface, may be used. Moreover, a combination of resins, such as a polyester-based, polyethylene terephthalate-based, or polychlorotrifluoroethylene-based resin and nylon 6, a fluororesine-based material, and a resin film, such as polyethylene, polypropylene, polyimide and polyamide, may also be used. Those resin films having superior durability, flexibility, transparency, electrical insulating property, and moisture-preventive property, are preferably used. These are only examples, and the material of the substrate 1 is not intended to be limited by these.
Moreover, in the case of a structure in which no light is taken out from the substrate side, the above-mentioned light transmitting property is not required, and a material having no light transmitting property may also be used.
The electrodes include the transparent electrode 2 on the side from which light is taken out and the back electrode 4 on the other side. Here, another structure may be used in which the transparent electrode 2 is formed on the substrate 1 and the phosphor layer 3 and the back electrode 4 are formed successively thereon. In contrast, still another structure may be used in which the back electrode 4 is formed on the substrate 1 and the phosphor layer 3 and the transparent electrode 2 are formed successively thereon. Alternatively, both of the transparent electrode 2 and the back electrode 4 may be formed as transparent electrodes.
First, the transparent electrode 2 is explained. Any material may be used as the transparent electrode 2 as long as it has a light-transmitting property so as to take light emission generated in the phosphor layer 3 out of the layer, and in particular, those materials having a high transmittance within a visible light range are desirably used. Moreover, those materials that have low resistance when used as the electrode are preferably used, and in particular, those materials having a superior adhesive property to the substrate 1 and the phosphor layer 3 are desirably used. In particular, preferred examples of materials for the transparent electrode 2 include those ITO materials (In2O3 doped with SnO2, referred to also as indium tin oxide), metal oxides mainly composed of InZnO, ZnO, SnO2 or the like, metal thin films such as Pt, Au, Pd, Ag, Ni, Cu, Al, Ru, Rh, and Ir, and conductive polymers, such as polyaniline, polypyrrole, PEDOT/PSS and polythiophene, and the like; however, the material is not particularly limited by these. These transparent electrodes 2 may be formed by using a film-forming method, such as a sputtering method, an electron beam vapor deposition method and an ion plating method so as to improve the transparency thereof or to lower the resistivity thereof. Moreover, after the film-forming process, the film may be surface-treated by a plasma treatment or the like so as to control the resistivity thereof. The film thickness of the transparent electrode 2 is determined based upon the sheet resistance value and visible light transmittance to be required.
The carrier concentration of the transparent electrode 2 is preferably set in a range from 1E17 to 1E22 cm−3. Moreover, in order to obtain performances as the transparent electrode 2, the volume resistivity of the transparent electrode 2 is preferably set to 1E-3 Ω·cm or less, and the transmittance is preferably set to 75% or more in a wavelength range from 380 to 780 nm. Furthermore, the refractive index of the transparent electrode 2 is preferably set to 1.85 to 1.95. Furthermore, in general, the film thickness of the transparent electrode 2 is set from approximately 100 to 200 nm. Here, in the case of a film such as ZnO, when the film thickness is set to 30 nm or less, it becomes possible to achieve a solid film with stable characteristics.
Moreover, any of generally well-known conductive materials may be applied as the back electrode 4. Preferably, those materials that are superior in adhesion to the phosphor layer 3 are preferably used. Preferred examples thereof include metal oxides, such as ITO, InZnO, ZnO and SnO2, metals, such as Pt, Au, Pd, Ag, Ni, Cu, Al, Ru, Rh, Ir, Cr, Mo, W, Ta and Nb, and laminated products thereof, or conductive polymers, such as polyaniline, polypyrrole and PEDOT[poly(3,4-ethylenedioxythiophene)]/PSS(polystyrene sulfonate), or conductive carbon.
The phosphor layer 3 will be described below.
As the first semiconductor substance 21, those materials having a band gap size ranging from a near ultraviolet area to a visible light area (from 1.7 eV to 3.6 eV) are preferably used, and more preferably, those materials having a band gap size ranging from the near ultraviolet area to a blue color area (from 2.6 eV to 3.6 eV) are used. Specific examples thereof include: the aforementioned compounds consisting of Group 12 and Group 16 elements, such as ZnS, ZnSe, ZnTe, CdS and CdSe, and mixed crystals of these (for example, ZnSSe or the like), compounds consisting of Group 2 and Group 16 elements, such as CaS and SrS, and mixed crystals of these (for example, CaSSe or the like), compounds consisting of Group 13 and Group 15 elements, such as AlP, AlAs, GaN and GaP, and mixed crystals of these (for example, InGaN or the like), and mixed crystals of the above-mentioned compounds, such as ZnMgS, CaSSe and CaSrS. Moreover, chalcopyrite-type compounds, such as CuAIS2, may be used. Furthermore, as the polycrystalline material made of the first semiconductor substance 21, those having a cubic crystal structure in the main portion thereof are preferably used. Here, one or a plurality of kinds of atoms or ions, selected from the group consisting of the following elements, may be contained as additives: Cu, Ag, Au, Ir, Al, Ga, In, Mn, Cl, Br, I, Li, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm and Yb. The light emission color from the phosphor layer 3 is also determined by the kinds of these elements.
Here, as the second semiconductor substance 23, any one of Cu2S, ZnS, ZnSe, ZnSSe, ZnSeTe, ZnTe, GaN and InGaN may be used. These materials may contain one kind or plural kinds of elements, selected from N, Cu and In, as additives used for imparting the p-type conductivity thereto.
The feature of the linear light-emitting device 10 relating to first embodiment lies in that the phosphor layer 3 has a polycrystalline structure made from the n-type semiconductor substance 21, with the p-type semiconductor substance 23 being segregated on the grain boundary 22 of the polycrystalline structure. In the conventional inorganic EL, by enhancing the crystallinity of the phosphor layer, electrons accelerated by a high electric field are prevented from being diffused; however, in general, since ZnS, ZnSe or the like exhibits the n-type conductivity, a supply of holes is not sufficient, with the result that light emission with high luminance derived from a recombination of an electron and a hole is not expected. In contrast, when the crystal grains of the phosphor layer are grown, the crystal grain boundary is uniquely expanded as well, unless it is a single crystal. In the case of a conventional inorganic EL element to which a high voltage is applied, the grain boundary in the film thickness direction forms a conductive path, resulting in a problem of a reduction in withstand voltage. In contrast, after hard studies, the inventor has found that, in a phosphor layer 3 having a polycrystalline structure made from the n-type semiconductor substrate 21, by providing a structure in which the p-type semiconductor substance 23 is segregated on the grain boundary 22 of the polycrystalline structure, the injecting property of holes is improved by the p-type semiconductor substance segregated on the grain boundary. Moreover, the inventor has also found that by scattering the segregated portions in the phosphor layer 3 with a high concentration, the recombination-type light emission of electrons and holes can be efficiently generated. Thus, it becomes possible to achieve a light-emitting element that emits light with high luminance at a low voltage, and consequently to complete the present invention. Moreover, by introducing a donor or an acceptor thereto, free electrons and holes captured by acceptors can be recombined, free holes and electrons captured by donors can be recombined, and light emission of the paired donor and acceptor can also take place. Furthermore, since other kinds of ions are located closely, light emission derived from energy transfer can also occur.
Moreover, in the case where a zinc-based material such as ZnS is used as the n-type semiconductor particles 21 of the phosphor layer 3, an electrode, made from a metal oxide containing zinc, such as ZnO, AZO (zinc oxide doped with, for example, aluminum) and GZO (zinc oxide doped with, for example, gallium), is preferably used as at least one of the transparent electrode 2 and the back electrode 4. The inventor has found that, by adopting a combination of specific n-type semiconductor particles 21 and a specific transparent electrode 2 (or back electrode 4), light emission can be produced with high efficiency.
Specifically, paying attention to a work function in the transparent electrode 2 (or back electrode 4), the work function of ZnO is 5.8 eV, while the work function of ITO (indium-tin oxide) that has been conventionally used as the transparent electrode is 7.0 eV. Here, since the work function of a zinc-based material that is the n-type semiconductor particles 21 of the phosphor layer 3 is 5 to 6 eV, the work function of ZnO is closer to the work function of the zinc-based material in comparison with that of ITO; therefore, the resulting advantage is that the electron injecting property to the phosphor layer 3 is improved. The same is true in the case where AZO or GZO, which is a zinc-based material, is used as the transparent electrode 2 (or back electrode 4) in the same manner.
As shown in
In a comparative example, on the other hand, as shown in
As described above, in the case where a zinc-based material, such as ZnS and ZnSe, is used as the n-type semiconductor particles 21 of the phosphor layer 3, by combining the particles with the transparent electrode 2 (or back electrode 4) made from a zinc oxide-based material, it becomes possible to provide a linear light-emitting device having superior light emitting efficiency.
Here, in the above-mentioned example, the explanation has been given by exemplifying AZO doped with aluminum and GZO doped with gallium as the transparent electrode 2 (or back electrode 4) containing zinc; however, the same effects can be obtained even by using zinc oxide doped with at least one kind selected from the group consisting of aluminum, gallium, titanium, niobium, tantalum, tungsten, copper, silver and boron.
One example of a method for manufacturing the linear light-emitting device 10, in accordance with first embodiment, will be described. Here, the same manufacturing method may be applicable to a phosphor layer made from another material as described above.
(a) First, Corning 1737 is prepared as a substrate 1.
(b) A linear back electrode 4 is formed on the substrate 1. For example, Al is used, and this is formed by using a photolithography method. The film thickness is set to 200 nm.
(c) A linear phosphor layer 3 is formed on the back electrode 4. Powdered ZnS and Cu2S are respectively charged into a plurality of evaporating sources, and each of the material is irradiated with an electron beam under vacuum (about 10−6 Torr) so as to be film-formed thereon. At this time, the substrate temperature is set to 200° C. so that ZnS and Cu2S are vapor deposited together.
(d) After forming the film, this is subjected to an annealing process at 700° C. for about one hour in a sulfur atmosphere so that a linear phosphor layer 3 is obtained. By examining this film by using the X-ray diffraction and the SEM, the polycrystalline structure with minute ZnS crystal grains and the segregated portion of CuxS on its grain boundary can be observed. Although the reason for this has not been clarified, it is considered that a phase separation occurs between ZnS and CuxS, with the result that the above-mentioned segregated structure is formed.
(e) Successively, a linear transparent electrode 2 is formed by using, for example, ITO. The film thickness is set to 200 nm.
(f) Next, a transparent insulator layer made from, for example, silicon nitride or the like is formed on the phosphor layer 3 and the transparent electrode 2 as a protective layer (not shown in the figure).
By using the above-mentioned processes, a linear light-emitting device 10 of first embodiment is obtained.
In the linear light-emitting device 10 of first embodiment, the transparent electrode 2 and the back electrode 4 were connected to a DC power supply 5, with a DC voltage being applied therebetween, so that light emission evaluations were carried out, and as a result, light emission was initiated at an applied voltage of 15 V, and a light emission luminance of about 600 cd/m2 was exerted at 35 V
In accordance with this plane light source 100, since the linear light-emitting device 10 relating to first embodiment is used, and since the device is arranged in combination with the light-guide plate 80 that changes the linear light outputted from the linear light-emitting device 10 into the planar light, a thinner device can be achieved at a low cost.
Here, the linear light-emitting device using the above-mentioned inorganic EL light-emitting element causes a reduction in electric resistance of the phosphor layer. For this reason, in the case where the phosphor layer, as it is, is used with a large surface area, as a plane light source for a backlight for use in, for example, a liquid crystal display or the like, too much current tends to flow, making it difficult to use this as the plane light source. Therefore, in the case where the linear light-emitting device is used as a backlight or the like, a linear light-source type use in combination with a light-guide plate like a cold cathode-ray tube, as described above, or a dot light-source type use like an LED, is preferably adopted.
The linear light-emitting device 20 in accordance with second embodiment of the present invention has a featured portion in structure in which the phosphor layer 3 is electrically divided into respective regions 3a to 3g along the longitudinal direction by a plurality of insulators 25. By finding out the following problems with the linear light-emitting device relating to first embodiment, the present inventor has reached the above-mentioned new feature so as to solve the problems.
The following description will explain the problems with the linear light-emitting device relating to first embodiment found by the present inventor, and then explain how the problems can be solved by the feature of the present invention.
<Problems with Linear Light-Emitting Device Relating to First Embodiment>
First, the present inventor has found a problem of luminance non-uniformity in the case where a linear light-emitting device of first embodiment is used as a linear light source. Specifically, since the electric resistance of the phosphor layer 3 is low, a comparatively large electric current flows upon light emission, and this causes a voltage drop in the transparent electrode 2 having a comparatively high resistance value, with the result that the current value of each of paths that pass through the respective portions of the phosphor layer 3 becomes gradually smaller from a terminal corresponding to a contact point from a power supply in the longitudinal direction of the transparent electrode 2 to cause a problem of low uniformity in luminance.
Referring to
The featured point of the linear light-emitting device 20 relating to the present second embodiment has been devised so as to solve the problem that, when a linear light-emitting device is used as a linear light source, the uniformity in luminance in the longitudinal direction is lowered. In other words, in the present invention, in a plurality of paths that extend through the phosphor layer 3 between the paired electrodes 2 and 4 of the linear light-emitting device, by changing the inner resistance values of the respective paths depending on respective portions thereof, it becomes possible to solve the problem with the uniformity in luminance.
The structure of the phosphor layer 3 in this linear light-emitting device 20 will be described bellow. This phosphor layer 3 is electrically divided into a plurality of regions 3a to 3g by a plurality of insulators 25. First, the insulators 25 will be explained, and next, the layout of the insulators will be explained.
The insulators 25 are formed in the phosphor layer 3, and used for electrically dividing the phosphor layer 3 into the regions 3a to 3g. As the material for the insulators 25, for example, insulating materials, such as, oxide insulators like SiO2 and Al2O3, and plastic resins, may be used, although not particularly limited thereby.
Moreover, the insulators 25 may be formed by using the following processes.
a) A phosphor layer 3 is formed by using a predetermined method.
b) The phosphor layer 3, thus formed, is subjected to an etching process at its portions where the insulators 25 are to be formed later, by using a photolithography method or the like.
c) In the case where, for example, SiO2 is embedded into the etched concave portions as the insulators 25, the embedding process is carried out by using a sputtering method, and in the case where a resin is embedded therein as the insulators 25, the embedding process is carried out by using a coating method.
d) Thereafter, the insulators on the upper portion of the phosphor layer 3 are removed by etching or grinding.
The insulators 25 can be disposed inside the phosphor layer 3 by the above-mentioned processes.
Here, not limited to the above-mentioned method, another method may be used in which the insulators 25 are preliminarily formed on the transparent electrode 2, and after patterning the insulators 25 by using a photolithography method or the like, the phosphor layer 3 is formed thereon, and the phosphor layer 3 on the upper portion of the insulators 25 is smoothed by grinding or the like so that regions 3a to 3g, formed by dividing the phosphor layer 3 with the insulators 25, may be obtained.
The layout of the insulators 25 inside the phosphor layer 3 will be described below. The intervals of the insulators 25 are determined depending on electric resistance values of the respective paths. The intervals are determined so that the electric resistance values in the paths each of which extends from the power supply 5 through the terminal serving as the contact point to the power supply 5, formed on the transparent electrode 2, and the transparent electrode 2 and the phosphor layer 3 to reach the metal electrode 4 are made virtually equal to one another with respect to the paths respectively passing through the regions 3a to 3g of the phosphor layer 3, divided by the insulators 25. That is, in the linear light-emitting device 20, as the distance to the terminal formed on the transparent electrode 2 becomes shorter, in other words, as the length of the passage through the transparent electrode 2 becomes shorter, the intervals between the insulators 25 are made narrower so that the electric resistance in the phosphor layer 3 is made higher. In contrast, as the distance to the terminal formed on the transparent electrode 2 becomes longer, in other words, as the length of the passage through the transparent electrode 2 becomes longer, the intervals between the insulators 25 are made wider so that the electric resistance in the phosphor layer 3 is made lower. Here, at a position close to the connection terminal side, the electric resistance of the transparent electrode 2 is low because of the short passage length in the transparent electrode 2, while, at a position far from the connection terminal side, the electric resistance of the transparent electrode 2 is high because of the long passage length in the transparent electrode 2. Therefore, the intervals of the insulators 25 are determined so that the total value of electric resistance values determined by the intervals between the insulators 25 and the passage lengths in the transparent conductive film 2 are made virtually equal to one another, with respect to the paths respectively passing through the divided regions 3a to 3g of the phosphor layer 3.
In
Here, in the linear light-emitting device 20 of
Moreover, the present second embodiment is characterized by the fact that the phosphor layer 3 is electrically divided into a plurality of regions 3a to 3g by the insulators 25, and the material properties, the structures and the materials, shown here, are examples, and the present invention is not intended to be limited thereby.
Moreover, in the same manner as in first embodiment, another feature of the linear light-emitting device 20 is that the phosphor layer 3 has a polycrystalline structure made from an n-type semiconductor substance 21, with a p-type semiconductor substance 23 being segregated to a grain boundary 22 of this polycrystalline structure.
A method for forming the phosphor layer 3 of the linear light-emitting device 20b will be described, with reference to
Here, in the present third embodiment also, the substrate may be placed on the metal electrode 4 side in the same manner as in first embodiment.
In the linear light-emitting device 20c of the present fourth embodiment, the resistance value in the thickness direction is changed by continuously changing the film thickness of the electric resistance adjusting layer 26 in the longitudinal direction; however, the materials, the structures and the forming methods of the respective components, shown here, are examples, and the present invention is not intended to be limited thereby.
In this linear light-emitting device 10, as shown in
Moreover, in the linear light-emitting device 10, the transparent electrode 2 and the back electrode 4 are electrically connected to each other with a DC power supply 5 interposed therebetween. When power is supplied from the DC power supply 5, a potential difference is generated between the transparent electrode 2 and the back electrode 4 so that a voltage is applied to the phosphor layer 3. Thus, the phosphor layer 3, placed between the transparent electrode 2 and the back electrode 4, is allowed to emit light, and the resulting light transmits through the transparent electrode 2, and is extracted from the linear light-emitting device 10.
Here, not limited to the above-mentioned structure, various modifications may be made therein on demand: for example, a plurality of thin dielectric layers may be formed between the electrode and the phosphor layer so as to regulate an electric current; a driving process is carried out by an AC power supply; the back electrode is made transparent; the back electrode is prepared as a black electrode; a structure to seal the entire or a part of the linear light-emitting device 10 is further provided; and a structure for color-converting the light-emission color of the phosphor layer 3 is further provided the front side in a light emission taking-out direction. For example, a white-color linear light-emitting device may be prepared by combining a blue-color phosphor layer and a color-conversion layer that converts a blue color into a green color and a red color, with each other.
Here, with respect to the respective component members of the linear light-emitting device relating to fifth embodiment of the present invention, except for those members the features of which are explained, virtually the same members as those of the respective component members of the linear light-emitting device relating to first embodiment may be used.
Moreover, although
The phosphor layer 3, which is sandwiched between the transparent electrode 2 and the back electrode 4, has either one of the following two structures.
(i) A structure (see
(ii) A structure (see
Here, the respective n-type semiconductor particles 21 forming the phosphor layer 3 are preferably electrically joined to the electrodes 2 and 4 through the p-type semiconductor 23.
The material for n-type semiconductor particles 21 is an n-type semiconductor material having a majority of carriers as electrons that exhibits an n-type conductive property. The material may be a compound semiconductor consisting of Group 12 and Group 16. Moreover, the material may be a compound semiconductor consisting of Group 13 and Group 15. More specifically, the material has an optical band gap size in a range of visible light rays, and examples thereof include: ZnS, ZnSe, GaN, InGaN, AlN, GaAlN, GaP, CdSe, CdTe, SrS and CaS, serving as host crystals, and these may be used as host crystals, or may include as additives, one or a plurality of kinds of atoms or ions, selected from the group consisting of Cu, Ag, Au, Ir, Al, Ga, In, Mn, Cl, Br, I, Li, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm and Yb. The light emission color from the phosphor layer 3 is also determined by the kinds of these elements.
In contrast, the material for the p-type semiconductor 23 is a p-type semiconductor material having a majority of carriers as holes that exhibits a p-type conductive property. Examples of this p-type semiconductor material include compounds, such as Cu2S, ZnS, ZnSe, ZnSSe, ZnSeTe and ZnTe, and nitrides, such as GaN and InGaN. Among these p-type semiconductor materials, Cu2S and the like inherently exhibit a p-type conductive property; however, with respect to the other materials, one or more kinds of elements, selected from the group consisting of nitrogen, Ag, Cu and In, are added thereto as additives and used. Moreover, a chalcopyrite type compound, such as CuGaS2 and CuAIS2, that exerts a p-type conductive property may be used.
The linear light-emitting device 10 of the present embodiment is characterized in that the phosphor layer 3 is provided with: either one of (i) a structure in which the p-type semiconductor 23 is segregated between the particles of the n-type semiconductor particles 21 (
In the case where a zinc-based material, such as ZnS, is used as the n-type semiconductor particles 21 of the phosphor layer 3, an electrode made of a metal oxide containing zinc, such as ZnO, AZO (made by doping zinc oxide, for example, with aluminum) and GZO (made by doping zinc oxide, for example, with gallium), is preferably used as, at least, either one of the transparent electrode 2 and the back electrode 4. The present inventor has found that, by using a combination of specific n-type semiconductor particles 21 and a specific transparent electrode 2 (or a back electrode 4), light emission with high efficiency is obtained.
In other words, considering of the work function of the transparent electrode 2 (or the back electrode 4), shows that the work function of ZnO is 5.8 eV, while the work function of ITO (indium tin oxide) conventionally used as a transparent electrode is 7.0 eV. Here, since the work function of the zinc-based material used as the n-type semiconductor particles 21 of the phosphor layer 3 is 5 to 6 eV, the work function of ZnO, which is closer to the work function of a zinc-based material in comparison with that of ITO, provides an advantage that the electron injecting property to the phosphor layer 3 is improved. This advantage is also obtained when a zinc-based material, such as AZO and GZO, is used as the transparent electrode 2 (or the back electrode 4).
As shown in
In contrast, in the comparative example, the transparent electrode is made from ITO that is not a zinc-based material, as shown in
As described above, in the case where a zinc-based material, such as ZnS and ZnSe, is used as the n-type semiconductor particles 21 of the phosphor layer 3, by combining it with the transparent electrode 2 (or the back electrode 4) made from a zinc oxide-based material, it becomes possible to provide a linear light-emitting device with superior light-emitting efficiency.
In the above-mentioned example, an explanation has been given by exemplifying AZO doped with aluminum and GZO doped with gallium as the material for the transparent electrode 2 (or the back electrode 4) containing zinc; however, the same effects can be obtained even when zinc oxide, doped with at least one kind of material selected from the group consisting of aluminum, gallium, titanium, niobium, tantalum, tungsten, copper, silver and boron, is used.
One example of a method for manufacturing the linear light-emitting device 10, in accordance with fifth embodiment, will be described. In this manufacturing method, an explanation is given to the structure using a substrate 1. Here, the same manufacturing method may be applicable to a phosphor layer made from another material as described above.
(a) First, Corning 1737 is prepared as the substrate 1.
(b) A linear back electrode 4 is formed on the substrate 1. For example, Al is used, and the film thickness is set to 200 nm.
(c) A linear phosphor layer 3 is formed on the back electrode 4. Powdered ZnS and Cu2S are respectively charged into a plurality of evaporating sources, and each of the material is irradiated with an electron beam under vacuum under vacuum (about 10−6 Torr) so as to be film-formed on the substrate 1 as the phosphor layer 3. At this time, the substrate temperature is set to 200° C. so that ZnS and Cu2S are vapor deposited together.
(d) After forming the film, this is subjected to an annealing at 700° C. for about one hour in a sulfur atmosphere. By examining this film by using the X-ray diffraction and the SEM, the polycrystalline structure with minute ZnS crystal grains and the segregated portion of CuxS can be observed. Although the reason for this has not been clarified, it is considered that a phase separation occurs between ZnS and CuxS, with the result that the above-mentioned segregated structure is formed.
(e) Successively, a linear transparent electrode 2 is formed by using, for example, ITO. The film thickness is set to 200 nm.
(f) Next, a transparent insulator layer made from, for example, silicon nitride or the like is formed on the phosphor layer 3 and the transparent electrode 2 as a protective layer (not shown in the figure).
By using the above-mentioned processes, a linear light-emitting device 10 of fifth embodiment is obtained.
In the linear light-emitting device 10 of fifth embodiment, the transparent electrode 2 and the back electrode 4 were connected to a power supply 5, with a DC voltage being applied therebetween, so that light emission evaluations were carried out, and as a result, light emission was initiated at an applied voltage of 15 V, and a light emission luminance of about 600 cd/m2 was exerted at 35 V.
In accordance with this plane light source 100, since the linear light-emitting device 10 relating to fifth embodiment is used, and since the device is arranged in combination with the light-guide plate 80 that changes the linear light outputted from the linear light-emitting device 10 into the planar light, a thinner apparatus can be achieved at a low cost.
Here, the linear light-emitting device using the above-mentioned inorganic EL light-emitting element causes a reduction in electric resistance of the phosphor layer. For this reason, in the case where the phosphor layer, as it is, is used with a large surface area, as a plane light source for a backlight for use in, for example, a liquid crystal display or the like, too much current tends to flow, making it difficult to use this as the plane light source. Therefore, in the case where the linear light-emitting device is used as a backlight or the like, a linear light-source type use in combination with a light-guide plate as described above, or a dot light-source type use like an LED, is preferably adopted, in the same manner as in a cold cathode tube.
The linear light-emitting device 20 in accordance with sixth embodiment of the present invention has a featured portion in structure in which the phosphor layer 3 is electrically divided into respective regions 3a to 3g along the longitudinal direction by a plurality of insulators 25. By finding out the following problems with the linear light-emitting device relating to fifth embodiment, the present inventor has reached the above-mentioned new feature so as to solve the problems.
The following description will explain the problems with the linear light-emitting device relating to first embodiment, found by the present inventor, and then explain how the problems can be solved by the feature of the present invention.
<Problems with Linear Light-Emitting Device Relating to Fifth Embodiment>
First, the present inventor has found a problem of luminance non-uniformity in the case where a linear light-emitting device of fifth embodiment is used as a linear light source. In other words, since the electric resistance of the phosphor layer 3 is low, a comparatively large electric current flows upon light emission, and this causes a voltage drop in the transparent electrode 2 having a comparatively high resistance value, with the result that the current value of each of paths that pass through the respective portions of the phosphor layer 3 becomes gradually smaller from a terminal corresponding to a contact point from a power supply in the longitudinal direction of the transparent electrode 2 to cause a problem of non-uniformity in luminance.
Referring to
The featured point of the linear light-emitting device 20 relating to the present sixth embodiment has been devised so as to solve the problem that, when a linear light-emitting device is used as a linear light source, the uniformity in luminance in the longitudinal direction is lowered. In other words, in the present invention, in a plurality of paths that extend through the phosphor layer 3 between the paired electrodes 2 and 4 of the linear light-emitting device, by changing the inner resistance values of the respective paths depending on respective portions thereof, it becomes possible to solve the problem with the uniformity in luminance.
The structure of the phosphor layer 3 in this linear light-emitting device 20 will be described. This phosphor layer 3 is electrically divided into a plurality of regions 3a to 3g by a plurality of insulators 25. First, the insulators 25 will be explained, and next, the layout of the insulators will be explained.
The insulators 25 are formed in the phosphor layer 3, and used for electrically dividing the phosphor layer 3 into the regions 3a to 3g. As the material for the insulators 25, for example, insulating materials, such as, oxide insulators like SiO2 and Al2O3, and plastic resins, may be used, although not particularly limited thereby.
Moreover, the insulators 25 may be formed, for example, by using the following processes.
a) A phosphor layer 3 is formed by using a predetermined method.
b) The phosphor layer 3, thus formed, is subjected to an etching process at its portions where the insulators 25 are to be formed later, by using a photolithography method or the like.
c) In the case where, for example, SiO2 is embedded into the etched concave portions as the insulators 25, the embedding process is carried out by using a sputtering method, and in the case where a resin is embedded therein as the insulators 25, the embedding process is carried out by using a coating method.
d) Thereafter, the insulators on the upper portion of the phosphor layer 3 are removed by etching or grinding.
The insulators 25 can be disposed inside the phosphor layer 3 by the above-mentioned processes.
Here, not limited to the above-mentioned method, another method may be used in which the insulators 25 are preliminarily formed on the transparent electrode 2, and after patterning the insulators 25 by using a photolithography method or the like, the phosphor layer 3 is formed thereon, and the phosphor layer 3 on the upper portion of the insulators 25 is smoothed by grinding or the like so that regions 3a to 3g, formed by dividing the phosphor layer 3 with the insulators 25, may be obtained.
The layout of the insulators 25 inside the phosphor layer 3 will be described. The intervals of the insulators 25 are determined depending on electric resistance values of the respective paths. The intervals are determined so that the electric resistance values in the paths each of which extends from the power supply 5 through the terminal serving as the contact point to the power supply 5, formed on the transparent electrode 2, and the transparent electrode 2 and the phosphor layer 3 to reach the metal electrode 4 are made virtually equal to one another with respect to the paths respectively passing through the regions 3a to 3g of the phosphor layer 3, divided by the insulators 25. That is, in the linear light-emitting device 20, as the distance to the terminal formed on the transparent electrode 2 becomes shorter, in other words, as the length of the passage through the transparent electrode 2 becomes shorter, the intervals between the insulators 25 are made narrower so that the electric resistance in the phosphor layer 3 is made higher. In contrast, as the distance to the terminal formed on the transparent electrode 2 becomes longer, in other words, as the length of the passage through the transparent electrode 2 becomes longer, the intervals between the insulators 25 are made wider so that the electric resistance in the phosphor layer 3 is made lower. Here, at a position close to the connection terminal side, the electric resistance of the transparent electrode 2 is low because of the short passage length in the transparent electrode 2, while, at a position far from the connection terminal side, the electric resistance of the transparent electrode 2 is high because of the long passage length in the transparent electrode 2. Therefore, the intervals of the insulators 25 are determined so that the total value of electric resistance values determined by the intervals between the insulators 25 and the passage lengths in the transparent conductive film 2 are made virtually equal to one another, with respect to the paths respectively passing through the divided regions 3a to 3g of the phosphor layer 3.
In
Here, in the linear light-emitting device 20 of
Moreover, the present sixth embodiment is characterized by the fact that the phosphor layer 3 is electrically divided into a plurality of regions 3a to 3g by the insulators 25, and the material properties, the structures and the materials, shown here, are examples, and the present invention is not intended to be limited thereby.
Moreover, in the same manner as in fifth embodiment, another feature of the linear light-emitting device 20 is that the phosphor layer 3 has either one of (i) a structure in which a p-type semiconductor 23 is segregated between particles of an n-type semiconductor 21 (
A method for forming the phosphor layer 3 of the linear light-emitting device 20b will be described with reference to
Here, in the present seventh embodiment also, the substrate may be placed on the metal electrode 4 side in the same manner as in first embodiment.
In the linear light-emitting device 20c of the present eighth embodiment, the resistance value in the thickness direction is changed by continuously changing the film thickness of the electric resistance adjusting layer 26 in the longitudinal direction; however, the materials, the structures and the forming methods of the respective components, shown here, are examples, and the present invention is not particularly intended to be limited thereby.
The linear light-emitting device of the present invention is capable of providing a linear light source having high uniformity in luminance, in particular, as a linear light source with high uniformity in luminance. In particular, the linear light-emitting device can be applied to a linear light source used as a light source for use in a backlight of a liquid crystal display.
Number | Date | Country | Kind |
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2006-338127 | Dec 2006 | JP | national |
2006-338130 | Dec 2006 | JP | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/JP2007/073476 | 12/5/2007 | WO | 00 | 6/15/2009 |