Patent Grant
7554305
This application is based on and hereby claims priority to Japanese Application No. 2004-205912 filed on Jul. 13, 2004 in Japan, the contents of which are hereby incorporated by reference.
(1) Field of the Invention
The present invention relates to a step-down circuit, which is mounted on, for example, semiconductor integrated circuits, for stepping down the power supply voltage.
(2) Description of Related Art
Recently, minute processing for higher density integration of LSI (Large Scale Integration) has been progressing. As the higher integration progresses, the withstand voltage of transistor decreases; and thus, it is getting difficult to increase the power supply voltage.
On the other hand, depending on the purpose, there is such a case that, due to the system power supply, the power supply voltage is high. In such a case, the power supply voltage cannot be used as it is for the operating voltage within the LSI. Accordingly, the power supply voltage is stepped down once within the LSI, and then, supplied to the interior of the LSI.
Also, there is such a case that, in order to reduce the power consumption, the operating voltage within the LSI is intentionally reduced.
For that reason, a step-down circuit, which steps down the power supply voltage, is used.
For example, as shown in
In this step-down circuit, it is arranged so that the comparator 104 compares the divided voltage, which is the step-down output (step-down voltage) of the output transistor 101 divided by the voltage dividing circuit 103, with the reference voltage from the reference voltage generating device 106, and based on the comparison result, the operation of the booster 102 is controlled. And as shown in
However, for example, when a noise enters into a load circuit 107 connected to the output end of the step-down circuit from the outside, the output voltage (step-down voltage, step-down output) of the step-down circuit changes. On the other hand, since the transistor 101 has parasitic capacitance between the output side and the gate side thereof, for example, when the step-down voltage changes due to a noise from the outside, there may be a case that a coupling occurs between the output side and the gate side of the output transistor 101 and a small amount of electric charge is injected thereinto.
When such electric charge is injected, even after the step-down voltage has reached a required voltage, and the operation of the booster 102 is stopped and the gate voltage of the output transistor 101 is maintained at a constant level, as shown with broken lines in
Further, when the above-described injection of electric charge occurs repeatedly, as shown with broken lines in
Still further, in the case where the load circuit 107, which is connected to the step-down circuit, has a CMOS structure, a large change is caused in the current (load current), which flows to the load circuit 107. In this case also, the same problem as the above arises.
When the power supply voltage is a low voltage (for example, 3V), since the step-down voltage hardly reaches to a required voltage (expected value), the booster 102 continues to operate. As a result, there may be a case that the gate voltage of the output transistor 101 rises too much resulting in a breakdown. Accordingly, in order to prevent the gate voltage from rising to a level that the output transistor 101 may be broken down (for example, in the case of thick film transistor, approximately 6V), the clamp circuit 105 is provided. However, the clamp circuit 105 cannot prevent the voltage from rising abnormally due to the injection of electric charge as described above.
In this case, as described above, when the step-down circuit is configured using an N channel type transistor 101 as the output transistor so as to raise the gate voltage by the booster 102, in the case where the step-down voltage is equal to or lower than a target voltage, a feedback control to raise the step-down voltage using the booster 102 is possible. However, since the booster 102 has only the function to raise the voltage only, when the step-down voltage rises exceeding the target voltage, such feedback control to lower the voltage is impossible.
Accordingly, in the step-down circuit, which has the configuration as described above, for example, even when an injection of electric charge occurs due to a noise from the outside causing the step-down voltage to rise, it is not possible to cope with the problem.
The present invention has been proposed in view of the above problems. An object of the present invention is accordingly to provide a step-down circuit, which is, even when the output transistor is injected with electric charge due to an external causes such as, for example, noise from the outside, capable of preventing the step-down voltage from rising.
For this reason, a step-down circuit according to the present invention comprises
an N channel type output transistor of which voltage at a control end thereof is controlled so as to step down a power supply voltage inputted from an input end thereof to a desired voltage and output the step-down voltage from an output end thereof;
a booster, connected to the control end of the output transistor, for raising the voltage of the control end; and
a discharge circuit for discharging the electric charge at the control end of the output transistor.
A semiconductor integrated circuit according to the present invention comprises the above-described step-down circuit.
Consequently, by the step-down circuit of the present invention, the following advantage is provided. That is, even when the output transistor is injected with electric charge due to external causes such as, a noise from the outside, when the output voltage (step-down voltage) of the step-down circuit gets higher, since the output voltage is discharged. Thus, the step-down voltage (step-down output) is prevented from rising. As a result, the electric power consumption can be prevented from increasing resulting in low electric power consumption. Further, a voltage exceeding the voltage in which the load circuit operates normally can be prevented from being supplied. Thus, operation failure can be prevented resulting in a high reliability.
Hereinafter, referring to the drawings, a step-down circuit according to embodiments of the present invention will be described.
First of all, referring to
In this embodiment, taking the stability into consideration, as for the output transistors, not a P channel type transistor but an N channel type transistor is employed.
Here, a drain (input end) of the output transistor 1 is connected to the power supply line of the power supply voltage VDD, a source (output end) thereof is connected to a load circuit 7, and a gate (control end) thereof is connected to a control circuit (feed back control circuit; control section) including the voltage dividing circuit 3, the comparator 4, the booster 2, and the discharge circuit 5.
It is adapted so that the power supply voltage VDD, which is inputted to the input end of the output transistor 1, is stepped down based on the voltage (gate voltage) of the control end thereof, which is controlled by the control circuit, and is outputted from the output end thereof to the load circuit 7 as a predetermined step-down voltage (step-down output) VOUT.
In this embodiment, it is adapted so that, when the step-down voltage VOUT, which is outputted from the output end of the output transistor 1, decreases lower than a target voltage, the raising side feed back control circuit, which includes the voltage dividing circuit 3, the comparator 4, a reference voltage generating device 8 and the booster 2, performs the feedback control to raise the step-down voltage VOUT; on the other hand, when the step-down voltage VOUT, which is outputted from the output end of the output transistor 1, rises higher than the target voltage, the lowering side feed back control circuit, which includes the voltage dividing circuit 3, the comparator 4, the reference voltage generating device 8 and the discharge circuit 5, performs the feedback control to lower the step-down voltage VOUT.
Here, the control circuit is connected to the gate (control end) and the source (output end) of the output transistor 1. And it is adapted so that the gate voltage of the output transistor 1 is raised based on the comparison result of the comparator 4.
Hereinafter, the embodiment will be described more particularly.
As shown in
As shown in
In this embodiment, it is adapted so that, when the divided voltage, which is inputted to the inverting input terminal (−input terminal) of the comparator 4, is equal to or lower than the reference voltage, which is inputted to the noninverting input terminal (+input terminal) of the comparator 4, the EN signal, which is outputted as the comparison result of the comparator 4, comes out as “H” (H level; high voltage potential; power supply voltage VDD). And the EN signal is given to one of the input ends of the booster 2, and based on the EN signal (i.e., based on the output of the comparator 4), the booster 2 raises the voltage.
On the other hand, when the step-down voltage (step-down output) VOUT, which is output from the output transistor 1, rises and the divided voltage, which is inputted to the inverting input terminal (−input terminal) of the comparator 4 is higher than the reference voltage, which is inputted to the noninverting input terminal (+input terminal) of the comparator 4, the EN signal, which is outputted as the comparison result of the comparator 4, comes out as “L” (L level; low voltage potential; grounding voltage). The EN signal is given to one of the input ends of the booster 2, and based on the EN signal (i.e., based on the output of the comparator 4), the booster 2 stops the operation. Thus, the raising of the voltage by the booster 2 is stopped.
To the other input end of the booster 2, as shown in
The reason why the booster 2 is provided as described above to raise the gate voltage VG of the output transistor 1 is as described below. That is, in the case where an N channel type transistor is used as the output transistor 1, satisfactory step-down output cannot be obtained by providing the power supply voltage VDD only as the gate voltage VG.
Here, the booster 2 is configured as a charge pump. As shown in
The discharge circuit 5 has a function to discharge the electric charge at the control end (gate) of the output transistor 1, and is configured including an inverter 51, an N channel type (Nch) transistor (switching transistor; for example, nMOSFET) 52 as the discharge transistor and a resistor 53 of resistance value R3.
Here, one end of the discharge circuit 5 is connected to the output end of the comparator 4, and the other end thereof is connected to the output end of the booster 2 (i.e., the gate of the output transistor 1). It is arranged so that, based on the comparison result of the comparator 4, the electric charge at the gate of the output transistor 1 is discharged.
A specific description will be given below.
The input end of the inverter 51 is connected to the output end of the comparator 4 so that the comparison result of the comparator 4 is inputted. On the other hand, the output end of the inverter 51 is connected to the gate (control end) of the discharge transistor 52 so that the output voltage (i.e., inverted signal which is the inverted output signal of the comparator 4) outputted from the inverter 51 is supplied to the gate of the discharge transistor 52 as the discharge signal (DC signal). Owing to this arrangement, the switching (ON/OFF control) of the discharge transistor 52 is carried out based on the DC signal.
In this embodiment, when the divided voltage, which is inputted to the inverting input terminal (−input terminal) of the comparator 4, is equal to or lower than the reference voltage, which is inputted to the noninverting input terminal (+input terminal) of the comparator 4, the signal, which is outputted as the comparison result of the comparator 4, comes out as “H” (H level; power supply voltage). However, the signal is inverted by the inverter 51, and the DC signal comes out as “L” (L level), and the discharge transistor 52 turns to OFF. In this case, the discharge circuit 5 does not operate, and accordingly, the electric charge at the gate of the output transistor 1 is not discharged.
On the other hand, when the step-down voltage (step-down output) VOUT, which is outputted from the output transistor 1, becomes high and when the divided voltage, which is inputted to the inverting input terminal (−input terminal) of the comparator 4, is equal to or higher than the reference voltage, which is inputted to the noninverting input terminal (+input terminal) of the comparator 4, the signal, which is outputted as the comparison result of the comparator 4 comes out as “L” (L level). However the signal is inverted by the inverter 51. The DC signal comes out as “H” (H level), and the discharge transistor 52 turns ON accordingly. Owing to this, the discharge circuit 5 operates, and thus, the electric charge (booster output) at the gate of the output transistor 1 is discharged.
In this embodiment, taking the ON resistance Ron of the discharge transistor 52 into consideration, to eliminate the influence thereof, the resistor (discharging resistor) 53 of resistance value R3 is provided in series with the discharge transistor 52. That is, the drain (input end) of the discharge transistor 52 is connected to the output end of the booster 2 (i.e., the gate of the output transistor 1) being interposed by the resistor 53. The source (output end) of the discharge transistor 52 is grounded.
Here, a description about the speed of discharge will be given.
The speed of discharge depends on the capacity (additional capacity of booster output) CL of the capacitor 23, which accumulates the raised voltage VBT raised by the booster 2, the resistance value R3 of the discharge resistor 53 and the resistance value (ON resistance) Ron of the discharge transistor 52 in the ON state.
That is, the time constant of the discharge (in the ideal state where no electric charge is injected from the outside), which represents the discharge speed, is obtained by the following formula:
time constant of discharge=CL×(R3+Ron)
The time constant of discharge is critical. Because, when the value is too large, the voltage cannot be prevented from rising due to the injection of the electric charge from the load circuit 7 side, which is driven by the step-down output. While, when the value is too small, the booster output voltage lowers faster, and accordingly, changes of the step-down output voltage become larger. Accordingly, the capacity CL of the capacitor 23, the resistance value R3 of the discharging resistor 53 and the ON resistance Ron of the discharge transistor 52 have to be set so that the time constant of the discharge is not too large or too small.
Further, it is preferred to set the time constant so that the fluctuation is as small as possible. However, the ON resistance of the discharge transistor 52 changes depending on the manufacturing fluctuation and the temperature dependency. Also, the ON resistance changes depending on the “H” (H level; power supply voltage) of the gate voltage. Therefore, in this embodiment, in order to reduce the influence of the fluctuation factors of the time constant, the discharging resistor 53 is provided in series with the discharge transistor 52. However, the discharging resistor 53 may not be provided with the discharge transistor 52.
The clamp circuit 6 is for preventing the gate voltage of the output transistor 1 from rising exceeding a predetermined voltage. For example, the clamp circuit 6 prevents the gate voltage from rising exceeding a gate voltage in which the output transistor 1 is broken down (for example, in the case of thick film transistor, approximately 6V).
Next, referring to
First of all, as shown in
On the other hand, since the signal, which is outputted as the comparison result of the comparator 4, is inverted by the inverter 51, the DC signal comes out as “L” (L level; low voltage; grounding voltage), the discharge transistor 52 turns to OFF. Accordingly, the discharge circuit 5 does not operate, and the electric charge of the gate of the output transistor 1 is not discharged.
After that, when the step-down voltage (step-down output) VOUT, which is outputted from the output transistor 1, becomes higher than the required voltage, the divided voltage, which is inputted to the inverting input terminal (−input terminal) of the comparator 4, becomes higher than the reference voltage, which is inputted to the noninverting input terminal (+input terminal) of the comparator 4. Thus, the EN signal outputted as the comparison result of the comparator 4 comes out as “L” (L level). As a result, the operation of the booster 2 is stopped.
On the other hand, since the signal, which is outputted as the comparison result of the comparator 4, is inverted by the inverter 51, the DC signal comes out as “H” (H level); and thus, the discharge transistor 52 turns to ON. Owing to this, the discharge circuit 5 operates, and the discharge of the electric charge (booster output) from the gate of the output transistor 1 starts.
As described above, when the operation of the booster 2 is stopped and the discharge by the discharge circuit 5 starts, the output voltage VBT of the booster 2 (booster output; i.e., the gate voltage VG of the output transistor 1) gradually decreases. Accompanying this, the step-down voltage (step-down output) VOUT also, which is outputted from the output transistor 1, decreases. And further, the divided voltage also, which is inputted to the inverting input terminal (−input terminal) of the comparator 4 decreases.
And when the step-down voltage (step-down output) VOUT, which is outputted from the output transistor 1, becomes equal to or lower than the required voltage, the divided voltage, which is inputted to the inverting input terminal (−input terminal) of the comparator 4, becomes equal to or lower than the reference voltage, which is inputted to the noninverting input terminal (+input terminal) of the comparator 4. Therefore, the EN signal, which is outputted as the comparison result of the comparator 4, comes out as “H” (H level; power supply voltage). As a result, the booster 2 is caused to operate and the raising of the output voltage (booster output; i.e., the gate voltage of the output transistor 1) of the booster 2 is caused to start.
On the other hand, since the signal, which is outputted as the comparison result of the comparator 4, is inverted by the inverter 51, the DC signal comes out as “L” (L level); and thus, the discharge transistor 52 turns to OFF. As a result, the operation of the discharge circuit 5 is stopped. The period of time when the discharge circuit 5 operates and the discharge is carried out is referred to as discharge period.
After that, the control as described above is repeated.
Consequently, by the step-down circuit according to this embodiment, even when, for example, electric charge is injected into the output transistor 1 due to an external cause such as noise from the outside, when the output voltage (step-down voltage) VOUT of the step-down circuit becomes higher, the electric charge is discharged. Accordingly, such advantage that the step-down voltage (step-down output) VOUT can be prevented from rising is obtained. As a result, since the electric power consumption can be prevented from increasing; and thus, the above contributes to low power consumption. Further, the voltage greater than a level where normal operation of the load circuit 7 is ensured can be prevented from being supplied. Thus, such advantage that operation failure is prevented contributing to a high reliability also obtained.
Next, the configuration of a step-down circuit according to a second embodiment of the present invention will be described with reference to
Compared to the above-described first embodiment, the step-down circuit according to the second embodiment is different in the following points; i.e., the discharge transistor is a P channel type (Pch) transistor, and a level converter is connected to the gate of the P channel type transistor.
That is, the second embodiment is configured such that, as shown in
As described-above, the ON resistance of the N channel type transistor is changed by the “H” (H level; power supply voltage VDD) of the gate voltage, and the time constant of the discharge tends to change. Here, in order to improve this point, the discharge transistor is replaced with the P channel type transistor 60. That is, the P channel type transistor 60 turns ON when the gate voltage is “L” (L level). Accordingly, the ON resistance of the P channel type transistor 60 is free from the influence of the power supply voltage. Therefore, the P channel type transistor 60 is adopted as the discharge transistor.
The P channel type transistor 60 does not turn OFF unless a gate voltage of the same potential as that of the source voltage is applied thereto. On the other hand, the source voltage of the P channel type transistor 60 as the discharge transistor becomes a voltage, which is raised by the booster 2; ordinarily, to a voltage higher than the power supply voltage VDD. For this reason, even when the signal voltage of “H” (H level), i.e., power supply voltage VDD is applied thereto as the gate voltage of the P channel type transistor 60, the P channel type transistor 60 can not be turned to OFF.
In this embodiment, in order to cause the P channel type transistor 60 as the discharge transistor to turn to OFF, the level converter 61 is provided, and it is adapted so that the signal voltage of “H” (H level; power supply voltage VDD) is shifted to the output level (boost level; boosted voltage VBT) of the booster 2 by the level converter 61 and supplied to the gate of the P channel type transistor 60. Thus, the output voltage VBT of the booster 2 is supplied as the high voltage potential side level (H level) of the level converter 61.
Even when the P channel type transistor 60 is used as the discharge transistor, same as the case of the above-described first embodiment, the ON resistance changes depending on the manufacturing fluctuation and/or the temperature dependency. For this reason, in order to reduce the influence of these fluctuation factors in the time constant, the resistor 53 of resistance value R3 is provided in series with the P channel type transistor 60. In this case, when shifting the signal voltage of “H” (H level; power supply voltage VDD) to the output level (boosted voltage VBT) of the booster 2 with the level converter 61, the voltage drop due to the resistor 53 also has to be considered. However, the resistor 53 may not be provided.
In this embodiment, a level converter 61 is interposed before the gate of the P channel type transistor 60, i.e., between the P channel type transistor 60 and the gate comparator 4.
For example, as shown in
When a signal outputted from the comparator 4 is inputted to the input end of the level converter 61, the signal is given to the gate of the transistor Tr2 and the inverter INV. The signal inverted by the inverter INV is given to the gate of the transistor Tr1. On the other hand, the output of the level converter circuit 61A is obtained from a node N1, which is the connection point of the transistor Tr4 and the transistor Tr2.
The output of the level converter circuit 61A is given to the buffer circuit 61B. That is, the output of the level converter circuit 61A is given to the gate of the transistors Tr5 and Tr6 constituting the buffer circuit 61B. The output from these transistors Tr5 and Tr6 is given to the transistors Tr7 and Tr8 constituting the buffer circuit 61B. And the output of the level converter 61 is obtained from a node N2, which is the connection point of the transistor Tr7 and the transistor Tr8.
For example, when the signal inputted to the level converter 61 (i.e., the output signal of the comparator 4) is high level (H level; for example, 5V), the transistor Tr1 is ON, and the gate of the transistor Tr4 is grounding level (L level). For this reason, the transistor Tr4 is also turned to ON. The transistor Tr2 is OFF. Accordingly, the output of the level converter circuit 61A becomes the high voltage potential side level (H level) i.e., the output voltage VBT (for example, 6V) of the booster 2. The output is outputted from the node N2 as the output of the level converter 61 via the buffer circuit 61B.
On the other hand, when the signal inputted to the level converter 61 (i.e., comparator output signal) is low level (L level), the transistor Tr2 turns to ON, and the output of the level converter circuit 61A becomes the low voltage potential side level (L level, grounding level). The output is outputted from the node N2 as the output of the level converter 61 via the buffer circuit 61B.
The configuration of the level converter 61 is not limited to the above.
In this embodiment, when the divided voltage, which is inputted to the inverting input terminal (−input terminal) of the comparator 4 is equal to or lower than the reference voltage, which inputted to the noninverting input terminal (+input terminal) of the comparator 4, the signal, which is outputted as the comparison result of the comparator 4, is resulted in “H” (H level; power supply voltage) In this case, since the signal voltage of “H” is shifted to the output level of the booster 2 (when the resistor R3 is provided, to a voltage level in which the voltage drop is taken into consideration) by the level converter 61, the DC signal becomes the output level (when the resistor R3 is provided, to voltage level in which the voltage drop is taken into consideration) of the booster 2, thus, the P channel type transistor 60 as the discharge transistor turns to OFF. In this case, the discharge circuit 5 does not operate, and thus, the electric charge of the gate of the output transistor 1 is not discharged.
On the other hand, when the step-down voltage (step-down output), which is outputted from the output transistor 1 gets higher and the divided voltage, which is inputted to the inverting input terminal (−input terminal) of the comparator 4 gets higher than the reference voltage, which is inputted to the noninverting input terminal (+input terminal) of the comparator 4, the signal outputted as the comparison result of the comparator 4 becomes “L” (L level). In this case, the level converter 61 outputs the “L” (L level) as it is. Accordingly, the DC signal becomes “L” (L level), the P channel type transistor 60 as the discharge transistor turns to ON. Owing to this, the discharge circuit 5 operates and the electric charge (booster output) of the gate of the output transistor 1 is discharged.
Since the other configuration is the same as that of the above-described first embodiment, the description thereof will be omitted.
Next, referring to
Compared to the above described first embodiment, as shown in
Since the other operations are the same as that of the above-described first embodiment, the description thereof is omitted.
Consequently, by the step-down circuit according to the second embodiment, the same effect as that of the above-described first embodiment is obtained. Further, the P channel type transistor 60 is adopted as the discharge transistor. Accordingly, the time constant of the discharge can be adapted so as not to depend on the power supply voltage. Accordingly, such advantage that the time constant of the discharge can be prevented from changing depending on the power supply voltage.
Next, referring to
Compared to the above-described second embodiment, the step-down circuit according to the third embodiment is different therefrom in the following point. That is, the EN signal, which controls the booster 2 to operate/stop, is fixed to “H” (H level; power supply voltage VDD) to allow the booster 2 to operate anytime. That is, in this embodiment, the input end of the booster 2 for inputting the EN signal is not connected to the output end of the comparator 4, but connected to the power supply line of the power supply voltage VDD so that the EN signal is at “H” (H level; power supply voltage VDD) anytime and the booster 2 is in operation anytime.
In this case, the booster 2 is allowed to operate anytime, and the step-down voltage (step-down output) VOUT, which is outputted from the output transistor 1, is controlled depending on the discharge.
Also, since the booster 2 operates anytime, the electric charge is supplied to the gate of the output transistor 1 anytime including the period when the discharge is carried out.
The reason why it is arranged so that the electric charge is supplied anytime including the period when the discharge is carried out is as described below. That is, not only that too large or too small time constant of discharge is not preferable, but also that, since the injection amount of the electric charge from the load circuit 7 side, which is driven by the step-down output VOUT, changes depending on the operation frequency and size of the circuit at the load circuit 7 side, the setting of the time constant of discharge is extremely difficult.
Since the other configuration is the same as that in the above-described first embodiment, the description thereof is omitted.
Next, referring to
Compared to the above-described second embodiment, the operation of the step-down circuit of the third embodiment is different therefrom in the following point. That is, since the booster operates during the discharge period, the output voltage (booster output), the step-down voltage (step-down output) and the divided voltage (the voltage inputted to the −input terminal of the comparator) of the booster is fluctuates up and down. In
When the capacity (resistance value of R3+Ron) of the discharge circuit in the third embodiment is the same as that in the above-described second embodiment, needless to say, the discharge period becomes longer. To adapt the discharge period in the third embodiment to be the same as the discharge period in the above-described second embodiment, the discharge capacity of the discharge circuit has to be adapted so as to be larger than the capacity of the discharge circuit of the above-described second embodiment. That is, when the booster is allowed to operate during the discharge period as the third embodiment, the resistance value of the resistors constituting the above-described discharge circuit and the resistance value Ron of the ON resistance of the P channel type transistor has to be adapted to be smaller (i.e., R3+Ron has to be smaller).
Since, the other operation is the same as that in the above described first embodiment, the description thereof is omitted.
Consequently, by the step-down circuit according to the third embodiment, the same effect as that in the above-described second embodiment can be obtained. Further, since the injection amount of the electric charge, which is charged in the capacitor 23 while the booster 2 operates, is much larger than the injection amount of the electric charge from the outside such as, for example, external noise. Therefore, by allowing the booster 2 to operate to supply the electric charge anytime including the period when the discharge is carried out, the influence due to the injection amount of the electric charge from the outside can be reduced. Accordingly, such advantage that the fluctuation of the time constant of the discharge is reduced can be obtained.
The third embodiment has been described as a modification of the above-described second embodiment. Likewise, the third embodiment can be applied to the above-described first embodiment. That is, in the circuit in the above-described first embodiment, the EN signal, which controls the booster 2 to operate/stop, may be fixed to “H” (H level; power supply voltage VDD) to allow the booster 2 to operate anytime. That is, in place that the input end of the booster 2 for inputting the EN signal is connected to the output end of the comparator 4, the input end of the booster 2 may be connected to the power supply line of the power supply voltage VDD so that the EN signal is at “H” (H level; power supply voltage VDD) anytime to allow the booster 2 in operation anytime.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2004-205912 | Jul 2004 | JP | national |
| Number | Name | Date | Kind |
|---|---|---|---|
| 5450025 | Shay | Sep 1995 | A |
| 5545970 | Parkes et al. | Aug 1996 | A |
| 5545980 | Nakamoto | Aug 1996 | A |
| 5548204 | Armstrong et al. | Aug 1996 | A |
| 5689208 | Nadd | Nov 1997 | A |
| 5847950 | Bhagwat | Dec 1998 | A |
| 5923156 | Casper | Jul 1999 | A |
| 6005378 | D'Angelo et al. | Dec 1999 | A |
| 6049201 | Feldtkeller | Apr 2000 | A |
| 6127882 | Vargha et al. | Oct 2000 | A |
| 6150800 | Kinoshita et al. | Nov 2000 | A |
| 6208124 | Fuchigami et al. | Mar 2001 | B1 |
| 6396334 | Aram | May 2002 | B1 |
| 6442079 | Lee et al. | Aug 2002 | B2 |
| 6456155 | Takai | Sep 2002 | B2 |
| 6522111 | Zadeh et al. | Feb 2003 | B2 |
| 6559689 | Clark | May 2003 | B1 |
| 6600299 | Xi | Jul 2003 | B2 |
| 6654263 | Kurotsu | Nov 2003 | B2 |
| 6686728 | Nakajima | Feb 2004 | B2 |
| 6690148 | Harrison | Feb 2004 | B2 |
| 6710585 | Schmitt et al. | Mar 2004 | B2 |
| 6812678 | Brohlin | Nov 2004 | B1 |
| 7042281 | Baglin et al. | May 2006 | B2 |
| 7068094 | Jamal et al. | Jun 2006 | B1 |
| 7119606 | Fahim | Oct 2006 | B2 |
| 7199565 | Demolli | Apr 2007 | B1 |
| 20030098675 | Harrison | May 2003 | A1 |
| 20030197543 | Imai | Oct 2003 | A1 |
| Number | Date | Country |
|---|---|---|
| 10248498 | May 2004 | DE |
| 2087818 | Mar 1990 | JP |
| 6169565 | Jun 1995 | JP |
| WO 2004040760 | May 2004 | WO |
| Number | Date | Country | |
|---|---|---|---|
| 20060012354 A1 | Jan 2006 | US |
