Claims
- 1. In combination,
- a substrate of one conductivity type semiconductor material having a first layer and a second layer, said first layer being of substantially uniform thickness and overlying said second layer, the resistivity of said first layer being substantially greater than the resistivity of said second layer,
- an insulator overlying said first layer,
- a conductor member overlying said insulator member,
- said second layer includes a first region of low resistivity and a second region of higher resistivity, said first region underlying said conductor member and substantially coextensive with said conductor member in a plane through said first region parallel to the plane of said conductor member, said first region being bounded within said plane by said second region,
- means for applying a voltage between said conductor member and said second layer to deplete entirely of majority carriers the portion of said first layer underlying said conductor member and to deplete at least a portion of said second layer underlying said conductor member, said first layer being sufficiently thick so that substantially all of the potential drop produced by said voltage in said layers appears across said first layer,
- means for introducing charge in the form of minority carriers corresponding to a signal into said portion of said first layer in a manner to cause the surface potential thereof to change in absolute magnitude while still maintaining depletion in at least a portion of said second layer whereby the change in surface potential of said depleted portion of said first layer is substantially linearly proportional to the charge introduced therein.
Parent Case Info
This application is a continuation of our patent application Ser. No. 591,637, filed June 30, 1975, how abandoned.
US Referenced Citations (9)
Continuations (1)
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Number |
Date |
Country |
Parent |
591637 |
Jun 1975 |
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