Claims
- 1. A method of manufacturing a liquid crystal device comprising:preparing a first substrate having a driving circuit area and a display area; forming first thin film transistors on said display area to constitute an active matrix circuit; forming second thin film transistors on said driving circuit area to constitute a first driving circuit; applying a sealing member on the first substrate; mating a second substrate having a second driving circuit to said first substrate with said sealing member therebetween wherein said second substrate covers both said active matrix circuit and said first driving circuit; and cutting said first and second substrates simultaneously to constitute at least one liquid crystal cell, wherein said second driving circuit is electrically connected to said first driving circuit, wherein said first substrate of said liquid crystal cell after the cutting has at least one side plane which is substantially aligned with a side plane of said second substrate.
- 2. A method of manufacturing a liquid crystal device according to claim 1 wherein said sealing member is cured by UV light.
- 3. A method of manufacturing a liquid crystal device according to claim 1 wherein said second thin film transistors are crystalline transistors.
- 4. A method of manufacturing a liquid crystal device comprising:preparing a first substrate having a driving circuit area and a display area; forming first thin film transistors on said display area to constitute an active matrix circuit; forming second thin film transistors on said driving circuit area to constitute a first driving circuit; applying a sealing member on the first substrate; mating a second substrate having a second driving circuit to said first substrate with said sealing member therebetween wherein said second substrate covers both said active matrix circuit and said first driving circuit; and cutting said first and second substrates simultaneously to constitute at least one liquid crystal cell, wherein said second driving circuit is electrically connected to said first driving circuit, wherein said second thin film transistors are crystalline transistors obtained by laser irradiation.
- 5. A method of manufacturing a liquid crystal device according to claim 4 wherein said sealing member is cured by UV light.
- 6. A method of manufacturing a liquid crystal device comprising:preparing a first substrate having a driving circuit area and a display area; forming first thin film transistors on said display area to constitute an active matrix circuit; forming second thin film transistors on said driving circuit area to constitute a first driving circuit; applying a sealing member on the first substrate; mating a second substrate having a second driving circuit to said first substrate with said sealing member therebetween wherein said second substrate covers both said active matrix circuit and said first driving circuit; and disposing a resin between said first driving circuit and said second substrate; and cutting said first and second substrates simultaneously to constitute at least one liquid crystal cell, wherein said second driving circuit is electrically connected to said first driving circuit.
- 7. A method of manufacturing a liquid crystal device according to claim 6 wherein said sealing member is cured by UV light.
- 8. A method of manufacturing a liquid crystal device according to claim 6 wherein said second thin film transistors are crystalline transistors.
- 9. A method of manufacturing a liquid crystal device comprising:preparing a first substrate having a driving circuit area and a display area; forming first thin film transistors on said display area to constitute an active matrix circuit; forming second thin film transistors on said driving circuit area to constitute a first driving circuit, said second thin film transistors are crystalline transistors obtained by laser irradiation; forming a passivation film on said second thin film transistors; applying a sealing member on the first substrate; mating a second substrate having a second driving circuit to said first substrate with said sealing member therebetween wherein said second substrate covers both said active matrix circuit and said first driving circuit; and cutting said first and second substrates simultaneously to constitute at least one liquid crystal cell, wherein said second driving circuit is electrically connected to said first driving circuit, wherein said passivation film is covered with an organic resin.
- 10. A method of manufacturing a liquid crystal device according to claim 9 wherein said passivation film comprises a material selected from the group consisting of silicon nitride, silicon oxide, PSG, BSG and polyimide.
- 11. A method of manufacturing a liquid crystal device comprising:preparing a first substrate having a driving circuit area and a display area; forming first thin film transistors on said display area to constitute an active matrix circuit; forming second thin film transistors on said driving circuit area to constitute a first driving circuit, said second thin film transistors are crystalline transistors obtained by laser irradiation; forming a passivation film on said second thin film transistors; applying a sealing member on the first substrate; mating a second substrate having a second driving circuit to said first substrate with said sealing member therebetween wherein said second substrate covers both said active matrix circuit and said first driving circuit; and cutting said first and second substrates simultaneously to constitute at least one liquid crystal cell, wherein said second driving circuit is electrically connected to said first driving circuit, wherein said passivation film is covered with an organic resin, wherein a material of said organic resin is same as said sealing member.
- 12. A method of manufacturing a liquid crystal device according to claim 11 wherein said passivation film comprises a material selected from the group consisting of silicon nitride, silicon oxide, PSG, BSG and polyimide.
Priority Claims (1)
Number |
Date |
Country |
Kind |
5-256571 |
Sep 1993 |
JP |
|
Parent Case Info
This a Divisional application of Ser. No. 08/698,204, filed Aug. 14, 1996, which itself is a Continuation of Ser. No. 08/301,774, filed Sep. 7, 1994, now abandoned.
US Referenced Citations (18)
Foreign Referenced Citations (14)
Number |
Date |
Country |
62-109026 |
May 1987 |
JP |
62-240934 |
Oct 1987 |
JP |
62-251723 |
Nov 1987 |
JP |
64-49022 |
Feb 1989 |
JP |
1-68725 |
Mar 1989 |
JP |
4-78819 |
Mar 1992 |
JP |
4-116623 |
Apr 1992 |
JP |
4-133029 |
May 1992 |
JP |
4-355433 |
Dec 1992 |
JP |
5-66413 |
Mar 1993 |
JP |
5-066413 |
Mar 1993 |
JP |
5-203977 |
Aug 1993 |
JP |
6-186579 |
Jul 1994 |
JP |
6-186580 |
Jul 1994 |
JP |
Non-Patent Literature Citations (5)
Entry |
English Translation of Japanese Patent Laid-Open No. 62-251723, published Nov. 2, 1987.* |
English Translation of Japanese Patent Laid-Open No. 4-78819, published Mar. 12, 1992.* |
English Translation of Japanese Patent Laid-Open No. 64-49022, published Feb. 23, 1989.* |
English Translation of Japanese Patent Laid-Open No. 4-116623, published Apr. 17, 1992.* |
“'93 The Latest Liquid Crystal Process Techniques”, p. 272, published Oct. 1, 1992 including English Translation thereof. |
Continuations (1)
|
Number |
Date |
Country |
Parent |
08/301774 |
Sep 1994 |
US |
Child |
08/698204 |
|
US |