Patent Application
20170329185
The present invention relates to a liquid crystal display device. More specifically, the present invention relates to a liquid crystal display device including an oxide semiconductor in a thin-film transistor substrate.
Liquid crystal display devices are display devices utilizing a liquid crystal composition for display. According to a typical display mode thereof, light is incident on a liquid crystal panel including a liquid crystal composition sealed in between a pair of substrates and a voltage is applied to the liquid crystal composition to change the alignment of liquid crystal molecules, thereby controlling the amount of light passing through the liquid crystal panel. Such liquid crystal display devices have advantageous characteristics such as thin profile, light weight, and low power consumption and thus are applied in various fields.
Conventionally used materials for a channel layer included in a thin-film transistor (TFT) that is provided in each pixel of a liquid crystal display device are silicon materials such as polycrystalline silicon and amorphous silicon. Recently, oxide semiconductors have been used as materials for a channel layer with an aim of improving the performance of the TFT.
The alignment of liquid crystal molecules in a state where no voltage is applied is normally controlled by an alignment film subjected to alignment treatment. Conventionally, rubbing is widely employed as an alignment treatment technique. Recently, research and development have been made on a photo-alignment method that enables contactless alignment treatment (for example, see Patent Literature 1).
In the case where a photolysis alignment film including a cyclobutane structure is used for the photo-alignment treatment, the threshold voltage (Vth) of the TFT may be lowered (negative shift). The use of an electrostatic chuck or a transfer step in production of liquid crystal display devices may cause static generation, and through a pixel transistor subjected to the negative shift, information of the static is unintendedly written into the corresponding pixel. As a result, a direct current (DC) potential applied to the liquid crystal causes a residual DC voltage in the liquid crystal, leading to display unevenness (nonuniform DC charging).
The present invention has been devised under the current situation in the art, and aims to provide a liquid crystal display device in which display unevenness is suppressed by preventing degradation of TFT characteristics due to photo-alignment treatment.
In the research on the degradation of TFT characteristics due to photo-alignment treatment, the inventors of the present invention noted that TFT characteristics are degraded when the TFT has a channel etch (CE) structure and an oxide semiconductor is used in a channel layer. As a result of study on the cause of the degradation of TFT characteristics, they found the followings. When the channel layer includes an oxide semiconductor, the oxide semiconductor is damaged during a process of forming the CE structure. The damaged oxide semiconductor generates electron-hole pairs upon irradiation with light. Due to the generation of electron-hole pairs, current-voltage characteristics (I-V characteristics) of the TFT are shifted to the negative side, leading to display unevenness.
The present inventors noted that employment of the etching stopper (ES) structure, instead of the channel etch structure, can suppress damage of the oxide semiconductor. Further, they found out that the use of a liquid crystal having negative dielectric anisotropy can reduce an influence of DC charging unintendedly written to a pixel, and that combination of these techniques can prevent degradation of TFT characteristics even in the case where a TFT including an oxide semiconductor is subjected to photo-alignment treatment. The present inventors thus arrived at the solution of the above problems to complete the present invention.
An aspect of the present invention may be a liquid crystal display device including: a thin film transistor substrate; and a liquid crystal layer, the thin film transistor substrate including a thin film transistor having an etching stopper structure, an alignment film, and a pair of electrodes for applying an electric field to the liquid crystal layer, the thin film transistor including a gate electrode, a gate insulating film, a channel layer containing an oxide semiconductor, an etching stopper layer, and a pair of a source electrode and a drain electrode in the stated order, the alignment film including a photofunctional group, the liquid crystal layer having negative dielectric anisotropy.
Since the liquid crystal display device of the present invention includes a thin film transistor having an etching stopper structure, damage of the oxide semiconductor included in the channel layer during channel etching can be prevented. This can thus prevent degradation of the current-voltage (I-V) characteristics of the TFT due to the photo-alignment treatment. Further, since the liquid crystal display device of the present invention includes a liquid crystal layer having negative dielectric anisotropy, an influence of DC charging unintendedly written to a pixel can be reduced. These can effectively prevent nonuniform DC charging due to the TFT characteristics, realizing a liquid crystal display device excellent in the display quality.
Embodiments of the present invention are described in the following. The present invention is not limited to the contents described in the following embodiments, and may be appropriately modified within a range where the configuration of the present invention is satisfied.
The liquid crystal display device of the present embodiment is a liquid crystal display device including: a thin film transistor substrate; and a liquid crystal layer, the thin film transistor substrate comprising a thin film transistor having an etching stopper structure, an alignment film, and a pair of electrodes for applying an electric field to the liquid crystal layer, the thin film transistor including a gate electrode, a gate insulating film, a channel layer containing an oxide semiconductor, an etching stopper layer, and a pair of a source electrode and a drain electrode in the stated order, the alignment film including a photofunctional group, the liquid crystal layer having negative dielectric anisotropy.
The thin film transistor substrate includes a thin film transistor (TFT) having an etching stopper structure. The etching stopper structure is provided to a TFT in the case where an etching stopper layer is formed on a channel layer for protection of the channel layer prior to channel etching (process of removing a conductive film on the channel layer by etching) for forming a source electrode and a drain electrode. In other words, in the etching stopper structure, an etching stopper layer is arranged on a channel layer, and end portions of a source electrode and a drain electrode are opposed to each other on the etching stopper layer. In a region where the end portions of the source electrode and the drain electrode are opposed to each other, the etching stopper layer is present between the channel layer and the source and drain electrodes, while in a region where no etching stopper layer is arranged, the channel layer is connected with the source and drain electrodes. In such an etching stopper structure, the etching stopper layer can prevent exposure of the channel layer during channel etching, thereby reducing damage of the channel layer.
The etching stopper layer is preferably formed of a material excellent in resistance against an etchant or etching gas used for removal of a conductive film in a step of channel etching. The etching stopper layer is preferably formed of an insulating material. Examples of the material of the etching stopper layer include silicon dioxide (SiO2), silicon nitride (SiNx), tantalum oxide, aluminum oxide, and titanium oxide. The etching stopper layer may have any thickness. The thickness is preferably 50 nm or more and 500 nm or less. In the case where the etching stopper layer is thin, the layer may be etched back upon patterning of a source electrode and a drain electrode to allow exposure of the channel layer, failing to fulfill the original function as an etching stopper. In the case where the etching stopper layer is thick, formation of such a layer takes a time, resulting in lower mass productivity.
The TFT includes a gate electrode, a gate insulating film, a channel layer containing an oxide semiconductor, an etching stopper layer, and a pair of a source electrode and a drain electrode in the stated order. Namely, the TFT has a bottom gate structure. In the bottom gate structure, the gate electrode is formed prior to the channel layer, and therefore, the surface of the channel layer is not covered with the gate electrode. Accordingly, if the channel layer is damaged by channel etching, light of the photo-alignment treatment is incident on the damaged surface of the channel layer without being shielded by the gate electrode.
As above, the respective members included in the TFT substrate are stacked in the order of (1) the gate electrode, (2) the gate insulating film, (3) the channel layer, (4) the etching stopper layer, and (5) the source electrode and the drain electrode based on their formation order. The side of (5) the source electrode and the drain electrode is closer to the alignment film.
Examples of the material of the gate electrode include high-melting-point metals such as tungsten, molybdenum, tantalum, and titanium, and nitrides of high-melting-point metals. The gate electrode may be either a single-layer electrode or an electrode including two or more layers laminated to each other.
Examples of the material of the gate insulating film include insulating materials such as silicon dioxide (SiO2), silicon nitride (SiNx), tantalum oxide, and aluminum oxide.
The oxide semiconductor used in the channel layer may be, for example an oxide semiconductor containing oxygen and at least one of In, Ga, Zn, Al, Fe, Sn, Mg, Ca, Si, Ge, Y, Zr, La, Ce, and Hf. In particular, preferred is an oxide semiconductor containing indium, gallium, zinc, and oxygen (In—Ga—Zn—O oxide semiconductor). The In—Ga—Zn—O oxide semiconductor exhibits excellent electron mobility and realizes a TFT that is less likely to suffer a leakage current.
Examples of the material of the source electrode and drain electrode include metals such as titanium, chromium, aluminum, and molybdenum, and alloys of these. The source electrode and drain electrode each may be either a single-layer electrode or an electrode including two or more layers laminated to each other. The source electrode and drain electrode can be formed, for example, by etching (channel etching) a conductive film by photolithography. Specifically, treatment is performed in the order of application of a resist, pre-baking, exposure, development, post-baking, dry etching, and resist stripping, thereby patterning the conductive film.
The TFT is preferably a pixel TFT present in a display region. In the case of a drive TFT present in a region other than the display region such as a frame region, generation of a photo-leakage current may be suppressed by shielding light of the photo-alignment treatment. By contrast, since light of the photo-alignment treatment cannot be shielded in the display region, generation of a photo-leakage current is desired to be prevented by forming an etching stopper layer to reduce the damage of the channel layer.
The alignment film is arranged on the liquid crystal layer side surface of the TFT substrate and controls the alignment of liquid crystal molecules in the liquid crystal layer. When the voltage applied to the liquid crystal layer is smaller than the threshold voltage (including a case of applying no voltage), the alignment of liquid crystal molecules in the liquid crystal layer is mainly controlled by the alignment film.
The alignment film has a photofunctional group. The photofunctional group refers to a functional group that is structurally changed by irradiation with light (electromagnetic wave) such as ultraviolet light or visible light. The alignment film is a so-called photo-alignment film having a photofunctional group to show photo-alignment properties. Materials that show photo-alignment properties refer to overall materials which, when irradiated with light, exhibit properties (alignment regulating force) of regulating the alignment of liquid crystal molecules present therearound or change the level of the alignment regulating force and/or the direction of the alignment.
The alignment film may include any photofunctional group, and preferably includes at least one selected from the group consisting of a cinnamate structure, a chalcone structure, a cyclobutane structure, an azobenzene structure, a stilbene structure, a coumarin structure, and a phenyl ester structure. These structures enable the alignment treatment with light. In polymers included in the alignment film, the cinnamate structure, chalcone structure, cyclobutane structure, azobenzene structure, stilbene structure, coumarin structure, and phenyl ester structure may be included in either the main chain or a side chain.
The cinnamate structure, chalcone structure, coumarin structure, and stilbene structure each are a photofunctional group which develops dimerization (dimer formation) and isomerization by irradiation with light or a group resulting from dimerization or isomerization of the photofunctional group. The cyclobutane structure is a photofunctional group that undergoes ring-opening decomposition by irradiation with light. The azobenzene structure is a photofunctional group which develops isomerization by irradiation with light or a group resulting from isomerization of the photofunctional group. The phenyl ester structure is a photofunctional group which develops photo-fries rearrangement by irradiation with light or a group resulting from photo-fries rearrangement of the photofunctional group.
The alignment film may be either a single-layer film or a film including two or more layers laminated to each other.
The alignment film can be formed by treatment performed in the order of application of an alignment agent containing a material that shows photo-alignment properties, pre-baking, exposure for alignment treatment, and post-baking, or in the order of application of an alignment agent containing a material that shows photo-alignment properties, pre-baking, post-baking, and exposure for alignment treatment.
On the liquid crystal layer side surface of the alignment film, a polymer layer may be formed by polymer sustained alignment (PSA). In the PSA, a liquid crystal material that contains a photopolymerizable monomer (precursor) and liquid crystal molecules is sealed in a liquid crystal panel, and irradiated with light so that the photopolymerizable monomer is photopolymerized. The polymer resulting from the photopolymerization has lower solubility into a liquid crystal material than the photofunctional monomer, so that a polymer layer can be formed on the alignment film. The photopolymerizable monomer used is preferably, for example, an acrylate monomer or a methacrylate monomer as it can be efficiently radically polymerized with light. A polymer layer to be formed by polymerization of the acrylate monomer and/or methacrylate monomer includes an acrylate structure and/or a methacrylate structure.
Examples of the acrylate monomer and methacrylate monomer include monomers represented by the formula (C):
Al—(R1)n—Y—(R2)m-A2 (C),
wherein Y represents a structure including at least one (condensed) benzene ring in which a hydrogen atom may be substituted with a halogen atom; at least one of A1 and A2 represents acrylate or methacrylate, A1 and A2 are bonded to the (condensed) benzene ring via R1 and R2; R1 and R2 each represent a spacer, specifically, an alkyl chain having a carbon number of 10 or smaller in which a methylene group may be substituted with a functional group selected from ester, ether, amide, and ketone groups, and a hydrogen atom may be substituted with a halogen atom; n and m are each 0 or 1, and no spacer is provided when n and m both represent 0.
The skeleton Y in the formula (C) is preferably a structure represented by the formula (C-1), (C-2), or (C-3). Hydrogen atoms in the formulae (C-1), (C-2), and (C-3) may be each independently substituted with a halogen atom, a methyl group, or an ethyl group.
Specific examples of the monomer represented by the formula (C) include those represented by the formulae (C-1-1), (C-1-2), and (C-3-1).
The polymer layer formed by PSA may be either a film covering the entire surface of the alignment film or a film dispersively formed on the alignment film.
The pretilt angle (angle formed between the surface of the alignment film and the major axis of the liquid crystal molecules) of the liquid crystal molecules provided by the alignment film (or the alignment film and the polymer layer) is not particularly limited. The alignment film may be either a horizontal alignment film or a vertical alignment film. In the case of the horizontal alignment film used for a transverse electric field mode such as an IPS mode and an FFS mode, the pre-tilt angle is preferably substantially 0° (for example, smaller than 10°), more preferably 0°.
The pair of electrodes is not particularly limited as long as it is configured to be able to apply an electric field to the liquid crystal layer, and may be designed in accordance with the type of the display mode of the liquid crystal display device or the like. The display mode of the liquid crystal display device of the present embodiment is not particularly limited, as long as the pair of electrodes applies an electric field to the liquid crystal layer for image display. Preferred is a transverse electric field mode such as a fringe field switching (FFS) mode or an in-plane switching (IPS) mode. In the transverse electric field mode, a liquid crystal having negative dielectric anisotropy is not likely to move in accordance with a vertical electric field created by nonuniform DC charging, so that an influence of the nonuniform DC charging on the display quality can be reduced.
In the FFS mode, the TFT substrate is provided with a structure (FFS electrode structure) including a planar electrode, a slit electrode, and an insulating film placed between the planar electrode and the slit electrode, and an oblique electric field (fringe electric field) is created in the liquid crystal layer adjacent to the TFT substrate. Normally, the slit electrode, the insulating film, and the planar electrode are arranged in the stated order from the liquid crystal layer side. In this mode, the slit electrode and the planar electrode correspond to a pair of electrodes for applying an electric field to the liquid crystal layer. The slit electrode may be, for example, an electrode provided with, as a slit, a linear aperture with its whole circumference surrounded by the electrode or a comb-shaped electrode in which multiple teeth portions are provided and linear cut portions between the teeth portions form slits.
In the IPS mode, the thin-film transistor substrate is provided with a pair of comb-shaped electrodes and a transverse electric field is created in the liquid crystal layer adjacent to the thin-film transistor substrate. In this mode, the pair of comb-shaped electrodes corresponds to a pair of electrodes for applying an electric field to the liquid crystal layer. The pair of comb-shaped electrodes may be, for example, a pair of electrodes each provided with multiple teeth portions, arranged in such a manner that the teeth portions mesh with each other.
The liquid crystal layer may be one commonly used in a liquid crystal display device in which the initial alignment of a liquid crystal is controlled by an alignment film. Liquid crystal molecules contained in the liquid crystal layer have negative dielectric anisotropy. Specifically, the anisotropy of dielectric constant (AO) defined by the formula (P) of the liquid crystal molecules is a negative value. For example, the liquid crystal molecules used may have a Δε of −1 to −20.
Δε=(Dielectric constant in the major axis direction)−(Dielectric constant in the minor axis direction) (P)
The liquid crystal molecules having negative dielectric anisotropy tend to have higher ion dissolving power than liquid crystal molecules having positive dielectric anisotropy. Accordingly, the influence of DC charging unintendedly written to a pixel can be reduced by formation of an electric double layer, so that the liquid crystal display of the present embodiment is less likely to be influenced by nonuniform charging.
The liquid crystal display device of the present embodiment may include, in addition to the thin-film transistor substrate and the liquid crystal layer, members such as a color filter substrate; a polarizing plate; a backlight; an optical film such as a phase difference film, a viewing angle expansion film, or a brightness enhancement film; an external circuit such as a tape carrier package (TCP) or a printed circuit board (PCB); and a bezel (frame). These members are not particularly limited, and those commonly used in the field of liquid crystal display devices may be used. Therefore, descriptions thereof are omitted.
Here, each and every detail described for the above embodiment of the present invention shall be applied to all the aspects of the present invention.
The present invention is more specifically described in the following based on examples and comparative examples with reference to drawings. The examples, however, are not intended to limit the present invention.
Example 1 relates to a liquid crystal display device of the fringe field switching (FFS) mode that is a horizontal alignment mode.
As illustrated in
As illustrated in
On the gate electrode 22g was provided a gate insulating film 23 that was a laminate (SiO2/SiNx) of a silicon oxide film with a thickness of 50 nm and a silicon nitride film with a thickness of 300 nm to cover the entire surface of the substrate.
On the gate insulating film 23 was provided a channel layer 24 including an oxide semiconductor with a thickness of 50 nm. The oxide semiconductor used contained indium, gallium, zinc, and oxygen (In—Ga—Zn—O oxide semiconductor). The channel layer 24 was formed by forming the oxide semiconductor into a film by sputtering and patterning the formed film as desired by photolithography including a wet etching step and a resist stripping step.
On the channel layer 24 was provided a silicon oxide film with a thickness of 100 nm as an etching stopper layer 31.
On the etching stopper layer 31 were provided a source electrode 25s and a drain electrode 25d each of which was a laminate (Ti/Al/Ti) including a titanium film with a thickness of 100 nm, an aluminum film with a thickness of 300 nm, and a titanium film with a thickness of 30 nm, in a predetermined pattern. As illustrated in
On the source electrode 25s and the drain electrode 25d was provided an inorganic insulating film 26 that was a silicon oxide film (SiO2) with a thickness of 300 nm to cover the entire surfaces of the substrates. An acrylic resin film 27 with a thickness of 2.0 μm was further provided to cover the entire surfaces of the substrates.
Since the liquid crystal display device of the present example is of the FFS mode, an auxiliary capacitance electrode 28 that was an indium-zinc-oxygen film (IZO) with a thickness of 100 nm was provided in a predetermined pattern on the acrylic resin film 27. An aperture penetrating the inorganic insulating film 26 and the acrylic resin film 27 was further formed to partly expose the drain electrode 25d.
Subsequently, an auxiliary capacitance insulating film 29 that was a silicon nitride (SiNx) film with a thickness of 100 nm was provided except for the region where the drain electrode 25d was partly exposed. Further, a pixel electrode 30 that was an indium-zinc-oxygen (IZO) film with a thickness of 100 nm was provided in a predetermined pattern. As described above, a TFT substrate having the structure as illustrated in
Though not illustrated in
The alignment films 50 were formed by the following procedure. First, an alignment agent containing, as a solid content, a polyimide polymer that included a cyclobutane structure in the main chain was applied to the TFT substrate 20. The alignment agent had a composition of N-methyl-2-pyrrolidone (NMP):butyl cellosolve (BC):solid content=66:30:4 (weight ratio). The same alignment agent was also applied to the CF substrate 40.
The TFT substrate 20 and the CF substrate 40 each with the alignment agent applied thereto were pre-baked at 70° C. for two minutes. The alignment films formed by the pre-baking each had a thickness of 100 nm. After the pre-baking, the alignment films were post-baked at 230° C. for 30 minutes. After the post-baking, irradiation with polarized ultraviolet rays in the normal direction of the substrate was performed as exposure for alignment treatment.
Next, a predetermined pattern was drawn with a sealing agent (produced by Kyoritsu Chemical & Co., Ltd., trade name: WORLD ROCK) on the CF substrate 40. Then, a liquid crystal was dropped to the TFT substrate 20 by one drop filling (ODF). The liquid crystal used was MLC6610 (Δε=−3.1) produced by Merck KGaA. The CF substrate 40 and the TFT substrate 20 were attached to each other in such a manner that the polarization axes of the polarized ultraviolet rays in the alignment treatment coincided with each other, and the liquid crystal was sealed in between the TFT substrate 20 and the CF substrate 40. The heat treatment was then carried out at 130° C. for 40 minutes. The formed liquid crystal layer 60 had a d·Δn (product of the thickness d and the refractive index anisotropy Δn) of 330 nm. A pair of polarizing plates was attached to the back side of the TFT substrate 20 and the viewing surface side of the CF substrate 40 in such a manner that the polarization axes were in a relation of crossed Nicols. Further, the backlight 10 equipped with a light emitting diode (LED) was mounted on the back side of the TFT substrate 20, thereby completing the FFS-mode liquid crystal display device of Example 1.
The I-V characteristics of the TFT of Example 1 were analyzed before and after the exposure for alignment treatment using a semiconductor parameter analyzer 4156C produced by Agilent Technologies. In the analysis, the voltage between the source electrode 25s and the drain electrode 25d was set to 10 V (Vds=10 V), and the amount of the current (Id) flowing in the channel layer 24 upon change of the voltage (Vg) of the gate electrode 22g was measured.
2) Display unevenness a gray scale value of 31
The screen lit at the gray scale value of 31 was visually observed to evaluate the display unevenness. The gray scale value of 31 corresponds to the rising portion of the voltage-transmittance curve (V-T line) and shows a steep change of the transmittance against the voltage change, so that the display unevenness tends to be significant. As a result of the observation, the liquid crystal display device of Example 1 had favorable display quality without display unevenness. Accordingly, it was confirmed that nonuniform DC charging due to the TFT characteristics did not occur.
An FFS-mode liquid crystal display device was produced in the same manner as in Example 1, except that the etching stopper layer 31 was not provided.
The I-V characteristics of the TFT of Comparative Example 1 were analyzed before and after the exposure for alignment treatment in the same manner as in Example 1.
The screen lit at the gray scale value of 31 was visually observed to evaluate the display unevenness. As a result of the observation, the liquid crystal display device of Comparative Example 1 had display unevenness even through a neutral density filter (ND10 filter) that passes 10% of the light. Namely, the liquid crystal display device of Comparative Example 1 did not have enough display quality. The display unevenness is presumably caused by nonuniform DC charging due to the TFT characteristics.
An FFS-mode liquid crystal display device was produced in the same manner, except for the formation of the alignment film, as in Example 1.
The alignment film was formed by the following procedure. First, an alignment agent containing, as a solid content, a polyimide polymer that included an azobenzene structure in the main chain was applied to the TFT substrate. The alignment agent had a composition of NMP:BC:solid content=66:30:4 (weight ratio). The same alignment agent was also applied to the CF substrate.
The TFT substrate and the CF substrate each with the alignment agent applied thereto were pre-baked at 70° C. for two minutes. The alignment films formed by the pre-baking each had a thickness of 100 nm. After the pre-baking, irradiation with polarized ultraviolet rays in the normal direction of the substrate was performed as exposure for alignment treatment.
The I-V characteristics of the TFT of Example 2 were analyzed before and after the exposure for alignment treatment in the same manner as in Example 1.
The screen lit at the gray scale value of 31 was visually observed to evaluate the display unevenness. As a result of the observation, the liquid crystal display device of Example 2 had favorable display quality without display unevenness (nonuniform DC charging due to TFT characteristics).
An FFS-mode liquid crystal display device was produced in the same manner, except for the formation of the alignment film, as in Example 1.
The alignment film was formed by the following procedure. First, an alignment agent containing, as a solid content, an acrylic polymer that included a cinnamate structure in a side chain was applied to the TFT substrate. The alignment agent had a composition of NMP:BC:solid content=66:30:4 (weight ratio). The same alignment agent was also applied to the CF substrate.
The TFT substrate and the CF substrate each with the alignment agent applied thereto were pre-baked at 70° C. for two minutes. The alignment films formed by the pre-baking each had a thickness of 100 nm. After the pre-baking, irradiation with polarized ultraviolet rays in the normal direction of the substrate was performed as exposure for alignment treatment. The light source of the polarized ultraviolet rays used was a high-intensity point light source (produced by Ushio Inc., trade name: Deep UV lamp). No bandpass filter was used. The polarized ultraviolet rays with which the alignment films were irradiated had a strength measured with an accumulated UV meter (produced by Ushio Inc., trade name: UIT-250, photodetector type: UVD-S313) of 6 J/cm2. After the exposure for alignment treatment, the alignment films were post-baked at 230° C. for 30 minutes.
The I-V characteristics of the TFT of Example 3 were analyzed before and after the exposure for alignment treatment in the same manner as in Example 1. As a result, the I-V characteristics were hardly changed before and after the exposure for alignment treatment. Specifically, the threshold voltage of the TFT was slightly lowered by 0.01 V (ΔVth=−0.01 V) after the exposure. The photofunctional group including a cinnamate structure which enables alignment exposure with low irradiance is particularly preferred in the present invention.
The screen lit at the gray scale value of 31 was visually observed to evaluate the display unevenness. As a result of the observation, the liquid crystal display device of Example 3 had favorable display quality without display unevenness (nonuniform DC charging due to TFT characteristics).
The threshold voltage of the TFT of Comparative Example 1 was significantly lowered by the exposure for alignment treatment, leading to display unevenness. In the TFT having a channel etch (CE) structure, the surface of the channel layer (back channel) is exposed in the dry etching process for separating a source electrode and a drain electrode, to be damaged by plasma discharge. This damage creates a defect level in the channel layer which mainly generates electron-hole pairs when irradiated with light for the alignment treatment. As a result, the I-V characteristics of the TFT are presumably negatively shifted. The spectrum of the light used in the alignment treatment included ultraviolet rays having a short wavelength of 350 nm or shorter which may give a significant influence on the characteristics of the oxide semiconductor (In—Ga—Zn—O) included in the channel layer.
In contrast, in Examples 1 to 3, exposure of the surface of the channel layer was prevented by the etching stopper layer, and therefore, the surface of the channel layer was not damaged by plasma discharge, presumably resulting in significant reduction in creation of a defect level.
Technical features mentioned in the examples of the present invention may be combined with each other to provide another embodiment of the present invention.
An aspect of the present invention may be a liquid crystal display device including: a thin film transistor substrate; and a liquid crystal layer, the thin film transistor substrate including a thin film transistor having an etching stopper structure, an alignment film, and a pair of electrodes for applying an electric field to the liquid crystal layer, the thin film transistor including a gate electrode, a gate insulating film, a channel layer containing an oxide semiconductor, an etching stopper layer, and a pair of a source electrode and a drain electrode in the stated order, the alignment film including a photofunctional group, the liquid crystal layer having negative dielectric anisotropy. According to the aspect, since the liquid crystal display device includes a thin film transistor having an etching stopper structure, damage of the oxide semiconductor included in the channel layer during channel etching can be prevented. Degradation of the current-voltage (I-V) characteristics of the TFT due to the photo-alignment treatment can be thus prevented. Further, since the liquid crystal display device of the present invention includes a liquid crystal layer having negative dielectric anisotropy, an influence of DC charging unintendedly written to a pixel can be reduced. These can effectively prevent nonuniform DC charging due to the TFT characteristics, realizing a liquid crystal display device excellent in the display quality.
The photofunctional group may include at least one selected from the group consisting of a cinnamate structure, a chalcone structure, a cyclobutane structure, an azobenzene structure, a stilbene structure, a coumarin structure, and a phenyl ester structure. These structures enable alignment treatment with light. The cinnamate structure is preferably used as the photofunctional group.
A polymer layer including at least one of the acrylate structure and the methacrylate structure may be provided between the alignment film and the liquid crystal layer. Such a polymer layer can be produced by PSA. The polymer layer is preferred as it can be formed by efficiently radically polymerizing a precursor (e.g., monomer) contained in the liquid crystal with light.
The oxide semiconductor preferably contains indium, gallium, zinc, and oxygen. Such an oxide semiconductor has excellent electron mobility and realizes a thin-film transistor that is less likely to suffer a leakage current. Accordingly, the use of the oxide semiconductor having such excellent TFT characteristics and the etching stopper layer in combination can provide a significant effect of preventing degradation of the TFT characteristics.
The technical features of the present invention described above may be appropriately combined within the spirit of the present invention.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2014-242116 | Nov 2014 | JP | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2015/082872 | 11/24/2015 | WO | 00 |
