The present invention relates to liquid crystal displays (LCDs), and more particularly to an LCD having a brightness detector and a method for manufacturing the LCD.
Because LCDs have the advantages of portability, low power consumption, and low radiation, they have been widely used in various portable information products such as notebooks, personal digital assistants (PDAs), video cameras, and the like. Furthermore, LCDs are considered by some to have the potential to completely replace CRT (cathode ray tube) monitors and televisions.
Brightness is an important parameter to evaluate the performance of a display of an LCD. A user may adjust the brightness of the display according to the prevailing operational environment in which he/she is viewing the display.
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The LCD 100 thus automatically adjusts the brightness of light provided by the backlight module 120 according to the brightness of the ambient environment. However, the backlight module 120 also includes other components such as a plastic frame, a metal bottom plate, and various kinds of optical films. All together, the brightness detector 122, the control circuit 123 and the other components make the backlight module 120 rather complicated and bulky. This correspondingly makes the structure of the LCD 100 unduly complicated and bulky.
Accordingly, what is needed is an LCD that can overcome the above-described deficiencies, and a method for making such LCD.
A liquid crystal display includes a liquid crystal panel having a first substrate, a second substrate, a liquid crystal layer between the first and second substrates, and a brightness detector provided at a blank edge area of the second substrate, the blank edge area having driving circuits.
A method for manufacturing a liquid crystal display includes: providing a first substrate and a second substrate; synchronously depositing an N− type amorphous silicon layer at a blank edge area of the second substrate which has driving circuits and etching the N− type amorphous silicon layer while forming a thin film transistor array at the second substrate; depositing an N+ type amorphous silicon layer on the N− type amorphous silicon layer and etching the N+ type amorphous silicon layer such that the N+ type amorphous silicon layer partly overlaps the N− type amorphous silicon layer; depositing an indium-tin-oxide layer on the N+ type amorphous silicon layer and depositing another indium-tin-oxide layer on the N− type amorphous silicon layer such that said another indium-tin-oxide layer partly overlaps the N− type amorphous silicon layer, in order to form a brightness detector; and filling liquid crystal material between the substrates, and assembling the substrates to form a liquid crystal panel.
Other advantages and novel features will become more apparent from the following detailed description when taken in conjunction with the accompanying drawings.
Reference will now be made to the drawings to describe the present invention in detail.
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The N+ type amorphous silicon layer 312 between the second indium-tin-oxide layer 322 and the N− type amorphous silicon layer 311 forms a schottky barrier. Thus the N− type amorphous silicon layer 311 can generate a kind of photoelectric effect when it absorbs light beams emitted by the backlight. That is, electrons in the N− type amorphous silicon layer 311 can absorb energy of photons of the light beams, undergo transition to higher energy levels, and transmit to the indium-tin-oxide layer 320 that has a lower electric potential. The transmission of the electrons generates electric current, and the current is output to an outside circuit (not shown) via the second indium-tin-oxide layer 322 and the N− type amorphous silicon layer 311.
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Typically, at least one predetermined signal that corresponds to at least one reference brightness of the backlight module is configured and inputted to the control circuit 232 at the time the LCD 200 is manufactured on a production line. Thereby, the control circuit 232 can adjust the brightness of the light source 240 using the at least one reference brightness as a benchmark.
The brightness detector 214 is formed on the second substrate 212 at the time when a semiconductor layer is deposited on the second substrate 212 and a thin film transistor array is formed on the second substrate 212 by etching the semiconductor layer. This simplifies the overall process of fabricating the LCD 200, and lowers costs.
In particular, an exemplary method for manufacturing the LCD 200 includes the steps of: a) providing a first substrate 211 and a second substrate 212; b) synchronously depositing and etching an N− type amorphous silicon layer 311 at a blank edge area of the second substrate 212 that has driving circuits while forming a thin film transistor array on the second substrate 212; c) depositing and etching an N+ type amorphous silicon layer 312 that partly overlaps the N− type amorphous silicon layer 311; d) depositing a first indium-tin-oxide layer 321 that partly overlaps the N+ type amorphous silicon layer 311; e) depositing a second indium-tin-oxide layer 322 on the N+ type amorphous silicon layer 312 to form a schottky diode type brightness detector 214, whereby the second indium-tin-oxide layer 322 and the N− type amorphous silicon layer 311 are configured to be electrically connected to an outside circuit (not shown); f) forming a signal amplifier 215 on the second substrate 212 adjacent to the brightness detector 214; and g) filling liquid crystal material between the substrates 211 and 212, and assembling the substrates 211 and 212 to form the liquid crystal panel 210.
After that, a plurality of flexible printed circuit boards 220 is connected with the liquid crystal panel 210. An analog-to-digital converter 231 and a control circuit 232 are arranged on a printed circuit board 230. The printed circuit board 230 is electrically connected with the liquid crystal panel 210 via the flexible printed circuit boards 220. Thus, the LCD 200 is obtained.
According to the above-described method, the brightness detector 214 is formed on the second substrate 212 while a thin film transistor array is formed on the second substrate 212 by deposition and etching. This simplifies the overall process of fabricating the LCD 200, and lowers costs.
It is to be understood, however, that even though numerous characteristics and advantages of the present embodiments have been set out in the foregoing description, together with details of the structures and functions of the embodiments, the disclosure is illustrative only, and changes may be made in detail, especially in matters of shape, size, and arrangement of parts within the principles of the invention to the full extent indicated by the broad general meaning of the terms in which the appended claims are expressed.
Number | Date | Country | Kind |
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94135977 | Oct 2005 | TW | national |