Claims
- 1. A liquid crystal device having a memory property comprising:
- a pair of organic ferroelectric layers; and
- a liquid crystal layer interposed between said layers.
- 2. The device of claim 1, wherein said ferroelectric layers are supported by at least one substrate.
- 3. The device of claim 1 further comprising at least one electrode arrangement formed adjacent to one of said ferroelectric layers.
- 4. The device of claim 1, wherein said ferroelectric layers comprise a copolymer of vinylidenfluoride and a trifluoroethylene.
- 5. A liquid crystal device having a memory property comprising:
- a pair of organic ferroelectric layers;
- a liquid crystal layer interposed between said ferroelectric layers; and
- at least one orientation control film formed on one of said ferroelectric layers.
- 6. The device of claim 5, wherein said ferroelectric layers are supported by at least one substrate.
- 7. The device of claim 5 further comprising at least one electrode arrangement formed adjacent to one of said ferroelectric layers.
- 8. The device of claim 5, wherein said ferroelectric layers comprise a copolymer of vinylidenfluoride and a trifluoroethylene.
- 9. A liquid crystal device having a memory property comprising a liquid crystal layer formed contiguous to an organic ferroelectric layer.
- 10. The device of claim 9 wherein said liquid crystal layer and ferroelectric layer are supported by at least one substrate.
- 11. The device of claim 9 further comprising at least one electrode arrangement formed on at least one outside surface of said layers.
- 12. The device of claim 9, wherein said ferroelectric layers comprise a copolymer of vinylidenfluoride and a trifluoroethylene.
- 13. A liquid crystal device having a memory property comprising:
- an organic ferroelectric layer;
- an orientation control film formed on said ferroelectric layer; and
- a liquid crystal layer formed contiguous to said orientation control film.
- 14. The device of claim 13 supported by at least one substrate.
- 15. The device of claim 13 further comprising at least one electrode arrangement formed adjacent to said ferroelectric layer.
- 16. The device of claim 13, wherein said ferroelectric layers comprise a copolymer of vinylidenfluoride and a trifluoroethylene.
Priority Claims (3)
Number |
Date |
Country |
Kind |
60-173935 |
Aug 1985 |
JPX |
|
60-173936 |
Aug 1985 |
JPX |
|
60-271245 |
Dec 1985 |
JPX |
|
RELATED APPLICATION
This application is a continuation-in-part of copending application Ser. No. 07/302,104 filed Jan. 25, 1989 now abandoned, which in turn is a continuation of application Ser. No. 06/894,279 filed Aug. 7, 1986, now abandoned.
US Referenced Citations (4)
Foreign Referenced Citations (4)
Number |
Date |
Country |
55-455322 |
Dec 1980 |
JPX |
59-216126 |
Dec 1984 |
JPX |
60-178092 |
Sep 1985 |
JPX |
62-132249 |
Jun 1987 |
JPX |
Continuations (1)
|
Number |
Date |
Country |
Parent |
894279 |
Aug 1986 |
|
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
302104 |
Jan 1989 |
|