LIQUID-CRYSTALLINE MEDIUM AND LIQUID-CRYSTAL DISPLAY COMPRISING THE SAME

Information

  • Patent Application
  • 20190093013
  • Publication Number
    20190093013
  • Date Filed
    September 26, 2018
    6 years ago
  • Date Published
    March 28, 2019
    5 years ago
Abstract
A liquid-crystalline medium, preferably having a nematic phase and exhibiting a dielectric anisotropy of 0.5 or more, which contains compounds of formula B and formula S
Description

The present invention relates to novel liquid crystalline media, in particular for use in liquid crystal displays, and to these liquid-crystal displays, particularly to liquid-crystal displays which use the IPS (in-plane switching) or, preferably, the FFS (fringe field switching) effect using dielectrically positive liquid crystals. The last one is also called SB-FFS (super brighness FFS) effect occasionally. For this effect dielectrically positive liquid crystals are used, which comprise one or more compounds having at the same time a high dielectric constant parallel to the molecular director and perpendicular to the molecular director, leading to a large average dielectric constant and a high dielectric ratio and, preferably, to a relatively small dielectric anisotropy at the same time. The liquid crystalline media optionally additionally comprise dielectrically negative, dielectrically neutral compounds or both. The liquid crystalline media are used in a homogeneous (i.e. planar) initial alignment. The liquid-crystal media according to the invention have a positive dielectric anisotropy and comprise compounds having at the same time large dielectric constants parallel and perpendicular to the molecular director.


The media are distinguished by a particularly high transmission and reduced response time in respective displays, which is brought about by their unique combination of physical properties, especially by their dielectric properties and in particular by their high ratio of (εav.) respectively of the high values of their dielectric ratio (ε/Δε). This also leads to their excellent performance in the displays according to the invention.


IPS and FFS displays using dielectrically positive liquid crystals are well known in the field and have been widely adopted for various types of displays like e.g. desk top monitors and TV sets, but also for mobile applications.


However, recently, IPS and in particular FFS displays using dielectrically negative liquid crystals are widely adopted. The latter ones are sometimes also called UB-FFS (ultra bright FFS). Such displays are disclosed e.g. in US 2013/0207038 A1. These displays are characterized by a markedly increased transmission compared to the previously used IPS- and FFS displays, which have been dielectrically positive liquid crystals. These displays using dielectrically negative liquid crystals, however, have the severe disadvantage of requiring a higher operation voltage than the respective displays using dielectrically positive liquid crystals. Liquid crystalline media used for UB-FFS have a dielectric anisotropy of −0.5 or less and preferably of −1.5 or less.


Liquid crystalline media used for HB-FFS (high brightness FFS) have a dielectric anisotropy of 0.5 or more and preferably of 1.5 or more. Respective media comprising both dielectrically negative and dielectrically positive liquid crystalline compounds, respectively mesogenic compounds are disclosed e.g. in US 2013/0207038 A1. These media feature rather large values of ε and of εav. already, however, their ratio of (ε/Δε) is relatively small.


According to the present application, however, the IPS or the FFS effect with dielectrically positive liquid crystalline media in a homogeneous alignment are preferred.


Industrial application of this effect in electro-optical display elements requires LC phases which have to meet a multiplicity of requirements. Particularly important here are chemical resistance to moisture, air and physical influences, such as heat, radiation in the infrared, visible and ultraviolet regions, and direct (DC) and alternating (AC) electric fields.


Furthermore, LC phases which can be used industrially are required to have a liquid-crystalline mesophase in a suitable temperature range and low viscosity.


None of the series of compounds having a liquid-crystalline mesophase that have been disclosed hitherto includes a single compound which meets all these requirements. Mixtures of two to 25, preferably three to 18, compounds are therefore generally prepared in order to obtain substances which can be used as LC phases.


Matrix liquid-crystal displays (MLC displays) are known. Non-linear elements which can be used for individual switching of the individual pixels are, for example, active elements (i.e. transistors). The term “active matrix” is then used, where in general use is made of thin-film transistors (TFTs), which are generally arranged on a glass plate as substrate.


A distinction is made between two technologies: TFTs comprising compound semiconductors, such as, for example, CdSe, or metal oxides like ZnO or TFTs based on polycrystalline and, inter alia, amorphous silicon. The latter technology currently has the greatest commercial importance worldwide.


The TFT matrix is applied to the inside of one glass plate of the display, while the other glass plate carries the transparent counter electrode on its inside. Compared with the size of the pixel electrode, the TFT is very small and has virtually no adverse effect on the image. This technology can also be extended to fully colour-capable displays, in which a mosaic of red, green and blue filters is arranged in such a way that a filter element is located opposite each switchable pixel.


The TFT displays most used hitherto usually operate with crossed polarisers in transmission and are backlit. For TV applications, ECB (or VAN) cells or FFS cells are used, whereas monitors usually use IPS cells or TN (twisted nematic) cells, and notebooks, laptops and mobile applications usually use TN, VA or FFS cells.


The term MLC displays here encompasses any matrix display having integrated non-linear elements, i.e., besides the active matrix, also displays with passive elements, such as varistors or diodes (MIM=metal-insulator-metal).


MLC displays of this type are particularly suitable for TV applications, monitors and notebooks or for displays with a high information density, for example in automobile manufacture or aircraft construction. Besides problems regarding the angle dependence of the contrast and the response times, difficulties also arise in MLC displays due to insufficiently high specific resistance of the liquid-crystal mixtures [TOGASHI, S., SEKIGUCHI, K., TANABE, H., YAMAMOTO, E., SORIMACHI, K., TAJIMA, E., WATANABE, H., SHIMIZU, H., Proc. Eurodisplay 84, September 1984: A 210-288 Matrix LCD Controlled by Double Stage Diode Rings, pp. 141 ff., Paris; STROMER, M., Proc. Eurodisplay 84, September 1984: Design of Thin Film Transistors for Matrix Addressing of Television Liquid Crystal Displays, pp. 145 ff., Paris]. With decreasing resistance, the contrast of an MLC display deteriorates. Since the specific resistance of the liquid-crystal mixture generally drops over the life of an MLC display owing to interaction with the inside surfaces of the display, a high (initial) resistance is very important for displays that have to have acceptable resistance values over a long operating period.


Displays which use the ECB effect have become established as so-called VAN (vertically aligned nematic) displays, besides IPS displays (for example: Yeo, S. D., Paper 15.3: “An LC Display for the TV Application”, SID 2004 International Symposium, Digest of Technical Papers, XXXV, Book II, pp. 758 and 759) and the long-known TN displays, as one of the three more recent types of liquid-crystal display that are currently the most important, in particular for television applications.


The most important designs may be mentioned here: MVA (multi-domain vertical alignment, for example: Yoshide, H. et al., Paper 3.1: “MVA LCD for Notebook or Mobile PCs . . . ”, SID 2004 International Symposium, Digest of Technical Papers, XXXV, Book I, pp. 6 to 9, and Liu, C. T. et al., Paper 15.1: “A 46-inch TFT-LCD HDTV Technology . . . ”, SID 2004 International Symposium, Digest of Technical Papers, XXXV, Book II, pp. 750 to 753), PVA (patterned vertical alignment, for example: Kim, Sang Soo, Paper 15.4: “Super PVA Sets New State-of-the-Art for LCD-TV”, SID 2004 International Symposium, Digest of Technical Papers, XXXV, Book II, pp. 760 to 763) and ASV (advanced super view, for example: Shigeta, Mitzuhiro and Fukuoka, Hirofumi, Paper 15.2: “Development of High Quality LCDTV”, SID 2004 International Symposium, Digest of Technical Papers, XXXV, Book II, pp. 754 to 757). More modern versions of the VA effect, are the so called PAVA (photo-alignment VA) and PSVA (polymer-stabilized VA).


In general form, the technologies are compared, for example, in Souk, Jun, SID Seminar 2004, Seminar M-6: “Recent Advances in LCD Technology”, Seminar Lecture Notes, M-6/1 to M-6/26, and Miller, Ian, SID Seminar 2004, Seminar M-7: “LCD-Television”, Seminar Lecture Notes, M-7/1 to M-7/32. Although the response times of modern ECB displays have already been significantly improved by addressing methods with overdrive, for example: Kim, Hyeon Kyeong et al., Paper 9.1: “A 57-in. Wide UXGA TFT-LCD for HDTV Application”, SID 2004 International Symposium, Digest of Technical Papers, XXXV, Book I, pp. 106 to 109, the achievement of video-compatible response times, in particular in the switching of grey shades, is still a problem which has not yet been solved to a satisfactory extent.


ECB displays, like ASV displays, use liquid-crystalline media having negative dielectric anisotropy (Δε), whereas TN and to date all conventional IPS displays use liquid-crystalline media having positive dielectric anisotropy. However, presently there is an increasing demand for IPS and FFS displays utilizing dielectrically negative liquid crystalline media.


In liquid-crystal displays of this type, the liquid crystals are used as dielectrics, whose optical properties change reversibly on application of an electrical voltage.


Since in displays in general, i.e. also in displays in accordance with these mentioned effects, the operating voltage should be as low as possible, use is made of liquid-crystal media which are generally predominantly composed of liquid-crystal compounds, all of which have the same sign of the dielectric anisotropy and have the highest possible value of the dielectric anisotropy. In general, at most relatively small proportions of neutral compounds and if possible no compounds having a sign of the dielectric anisotropy which is opposite to that of the medium are employed. In the case of liquid-crystal media having negative dielectric anisotropy e.g. for ECB or UB-FFS displays, predominantly compounds having negative dielectric anisotropy are thus employed. The respective liquid-crystalline media employed generally consist predominantly and usually even essentially of liquid-crystal compounds having negative dielectric anisotropy.


In the media used in accordance with the present application, significant amounts of dielectrically positive liquid-crystal compounds and generally only very small amounts of dielectrically compounds or even none at all are typically employed, since in general the liquid-crystal displays are intended to have the lowest possible addressing voltages. At the same time small amounts of dielectrically neutral compounds may be beneficially used in some cases.


US 2013/0207038 A1 discloses liquid crystalline media for HB-FFS displays proposing to improve the performance of the FFS displays using liquid crystals having a positive dielectric anisotropy by the additional incorporation of dielectrically negative liquid crystals. This, however, leads to the necessity of a compensation of the negative contribution of these compounds to the overall dielectric anisotropy of the resultant media. To this end, either the concentration of the dielectrically positive materials has to be increased, which, in turn, leaves less room for the use of dielectrically neutral compounds as diluters in the mixtures, or, alternatively, compounds with a stronger positive dielectric anisotropy have to be used. Both of these alternatives have the strong drawback of increasing the response time of the liquid crystals in the displays.


Liquid crystalline media having a positive dielectric anisotropy for IPS and FFS displays have already been disclosed. In the following some examples will be given.


CN 104232105 A discloses liquid crystalline media with a positive dielectric anisotropy having dielectric ratios (ε/Δε) AO of up to 0.7.


WO 2014/192390 also discloses liquid crystalline media with a positive dielectric anisotropy having rather high values of εμ, but having dielectric ratios (ε/Δε) of only about 0.5.


WO 2015/007173 discloses liquid crystalline media with a positive dielectric anisotropy, some of which have a dielectric ratio (ε/Δε) of about 0.7 and slightly above, up to 0.88.


Laid open DE 102016003902, EP 3 081 620 and EP 3 095 834 are related to liquid crystal compounds respectively liquid crystalline media for application in respective displays.


Pending, not yet published Applications EP 17164891.8, EP 16190393.5, EP 16194162.0EP 16197206.2 and EP 16199580.8 of the applicant of the instant application are also related to liquid crystal compounds respectively liquid crystalline media for application in respective displays.


Obviously, the range of the nematic phase of the liquid-crystal mixture must be sufficiently broad for the intended application of the display.


The response times of the liquid-crystal media in the displays also have to be improved, i.e. reduced. This is particularly important for displays for television or multimedia applications. In order to improve the response times, it has repeatedly been proposed in the past to optimise the rotational viscosity of the liquid-crystal media (γ1), i.e. to achieve media having the lowest possible rotational viscosity. However, the results achieved here are inadequate for many applications and therefore make it appear desirable to find further optimisation approaches.


Adequate stability of the media to extreme loads, in particular to UV exposure and heating, is very particularly important. In particular in the case of applications in displays in mobile equipment, such as, for example, mobile telephones, this may be crucial.


Besides their relatively poor transmission and their relatively long response times, the MLC displays disclosed hitherto, have further disadvantages. These are e.g. their comparatively low contrast, their relatively high viewing-angle dependence and the difficulty in the reproduction of grey scales in these displays, especially when observed from an oblique viewing angle, as well as their inadequate VHR and their inadequate lifetime. The desired improvements of the transmission of the displays and of their response times are required in order to improve their energy efficiency, respectively their capacity to render rapidly moving pictures.


There thus continues to be a great demand for MLC displays having very high specific resistance at the same time as a large working-temperature range, short response times and a low threshold voltage, with the aid of which various grey shades can be produced and which have, in particular, a good and stable VHR.


The invention has the object of providing MLC displays, not only for monitor and TV applications, but also for mobile applications such as e.g. telephones and navigation systems, which are based on the ECB, IPS or FFS effect, do not have the disadvantages indicated above, or only do so to a lesser extent, and at the same time have very high specific resistance values. In particular, it must be ensured for mobile telephones and navigation systems that they also work at extremely high and extremely low temperatures.


Surprisingly, it has been found that it is possible to achieve liquid-crystal displays which have, in particular in IPS and FFS displays, a low threshold voltage with short response times, a sufficiently broad nematic phase, favourable, relatively low birefringence (Δn) and, at the same time, a high transmission, good stability to decomposition by heating and by UV exposure, and a stable, high VHR if use is made in these display elements of nematic liquid-crystal mixtures which comprise one or more compounds, preferably two or more compounds of formula B, preferably selected from the group of the compounds of the sub-formulae B-1 and B-2, one or more compounds, preferably two or more compounds of formula S, preferably selected from the group of the compounds of the sub-formulae S-1 and S-2, and optionally of formula S0, preferably selected from S0-1, S0-2, and optionally of formula I, preferably selected from I-1, I-2, I-3 and I-4, particularly preferably of these of the sub-formulate I-2 and/or I-3 and/or I-4, more preferably I-2 and/or I-4, and preferably additionally at least one compound, preferably two or more compounds, selected from the group of the compounds of the formulae II and III, the former preferably of formula II-1 and/or II-2, and/or at least one compound, preferably two or more compounds selected from the group of formulae IV and/or V and, preferably, one or more compounds selected from the group of formulae VII to IX (all formulae as defined herein below).


Media of this type can be used, in particular, for electro-optical displays having active-matrix addressing for IPS—or FFS displays.


The media according to the present invention preferably additionally comprise a one or more compounds selected from the group of compounds of formulae II and III, preferably one or more compounds of formula II, more preferably in addition one or more compounds of formula III and, most preferably, additionally one or more compounds selected from the group of the compounds of formulae IV and V and, again preferably, one or more compounds selected from the group of compounds of formulae VI to IX (all formulae as defined below).


The mixtures according to the invention exhibit very broad nematic phase ranges with clearing points ≥70° C., very favourable values for the capacitive threshold, relatively high values for the holding ratio and at the same time good low-temperature stabilities at −20° C. and −30° C., as well as very low rotational viscosities. The mixtures according to the invention are furthermore distinguished by a good ratio of clearing point and rotational viscosity and by a relatively high positive dielectric anisotropy.


Now, it has been found surprisingly that LCs of the FFS type using liquid crystals with positive dielectric anisotropy may be realised using specially selected liquid crystalline media. These media are characterised by a particular combination of physical properties. Most decisive amongst these are their dielectric properties and here a high average dielectric constant (εav.), a high dielectric constant perpendicular to the director of the liquid crystal molecules (ε), a high value of the dielectric anisotropy (Δε), and, in particular, the relatively high ratio of these latter two values: (ε/Δε).


The liquid crystalline media according to the present invention preferably have a positive dielectric anisotropy, preferably in the range from 1.5 or more to 20.0 or less, more preferably in the range from 3.0 or more to 8.0 or less and, most preferably in the range from 4.0 or more to 7.0. or less.


The liquid crystalline media according to the present invention preferably have a dielectric constant perpendicular to the director of the liquid crystal molecules (ε) of 5.0 or more, more preferably of 6.0 or more, more preferably of 7.0 or more, more preferably of 8.0 or more, more preferably of 9 or more and, most preferably, of 10.0 or more.


The liquid crystalline media according to the present invention preferably have a dielectric ratio (ε/Δε) of 0.65 or more, more preferably of 0.75 or more and, most preferably, of 1.0 or more.


In a preferred embodiment of the present invention the liquid crystalline medium, preferably having a dielectric anisotropy (Δε) of 0.5 or more, preferably comprises

    • a) one or more compounds of formula B, preferably selected from the group of compounds of formulae B-1 and B-2, preferably in a concentration in the range from 1% to 60%, more preferably in the range from 5% to 40%, particularly preferably in the range from 8% to 35%,




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in which




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denotes




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denotes, in each occurrence independently of one another,




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preferably




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    • n denotes 1 or 2, preferably 1,

    • RB denotes alkyl, alkoxy, fluorinated alkyl or fluorinated alkoxy, preferably having 1 to 7 C atoms, alkenyl, alkenyloxy, alkoxyalkyl or fluorinated alkenyl having 2 to 7 C atoms, preferably alkyl, alkoxy, alkenyl or alkenyloxy, more preferably alkyl, alkenyl, alkoxy or alkenyloxy, and, most preferably alkyl, and

    • XB denotes F, Cl, CN, NCS, fluorinated alkyl, fluorinated alkenyl, fluorinated alkoxy or fluorinated alkenlyoxy, the latter four groups preferably having 1 to 4 C atoms, more preferably F, Cl, CF3 or OCF3, and

    • b) one or more compounds of formula S, having both a high dielectric constant perpendicular to the director and parallel to the director, preferably in a concentration in the range from 1% to 60%, more preferably in the range from 5% to 40%, particularly preferably in the range from 8% to 35%,







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in which




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denotes




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denotes




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    • n denotes 1 or 2,

    • RS denotes alkyl, alkoxy, fluorinated alkyl or fluorinated alkoxy, preferably having 1 to 7 C atoms, alkenyl, alkenyloxy, alkoxyalkyl or fluorinated alkenyl having 2 to 7 C atoms and preferably alkyl or alkenyl, and

    • XS denotes F, Cl, CN, NCS, fluorinated alkyl, fluorinated alkenyl, fluorinated alkoxy or fluorinated alkenyloxy, the latter four groups preferably having 1 to 4 C atoms, preferably F, Cl, CF3 or OCF3, more preferably F, CF3 or OCF3, and

    • b) one or more compounds selected from the group of compounds of formulae II and III, being dielectrically positive, preferably of compounds having a dielectric anisotropy of 3 or more each:







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in which

    • R2 denotes alkyl, alkoxy, fluorinated alkyl or fluorinated alkoxy having 1 to 7 C atoms, alkenyl, alkenyloxy, alkoxyalkyl or fluorinated alkenyl having 2 to 7 C atoms and preferably alkyl or alkenyl,




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      • on each appearance, independently of one another, denote









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preferably




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    • L21 and L22 denote independently of each other H or F, preferably L21 denotes F,

    • X2 denotes halogen, halogenated alkyl or alkoxy having 1 to 3 C atoms or halogenated alkenyl or alkenyloxy having 2 or 3 C atoms, preferably F, C1, —OCF3, —O—CH2CF3, —O—CH═CH2, —O—CH═CF2 or —CF3, very preferably F, Cl, —O—CH═CF2 or —OCF3,

    • m denotes 0, 1, 2 or 3, preferably 1 or 2 and particularly preferably 1,

    • R3 denotes alkyl, alkoxy, fluorinated alkyl or fluorinated alkoxy having 1 to 7 C atoms, alkenyl, alkenyloxy, alkoxyalkyl or fluorinated alkenyl having 2 to 7 C atoms and preferably alkyl or alkenyl,







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      • on each appearance, independently of one another, are









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preferably




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    • L31 and L32, independently of one another, denote H or F, preferably L31 denotes F,

    • X3 denotes halogen, halogenated alkyl or alkoxy having 1 to 3 C atoms or halogenated alkenyl or alkenyloxy having 2 or 3 C atoms, F, Cl, —OCF3, —OCHF2, —O—CH2CF3, —O—CH═CF2, —O—CH═CH2 or —CF3, very preferably F, Cl, —O—CH═CF2, —OCHF2 or —OCF3,

    • Z3 denotes —CH2CH2—, —CF2CF2—, —COO—, trans-CH═CH—, trans-CF═CF—, —CH2O— or a single bond, preferably —CH2CH2—, —COO—, trans-CH═CH— or a single bond and very preferably —COO—, trans-CH═CH— or a single bond, and

    • n denotes 0, 1, 2 or 3, preferably 1, 2 or 3 and particularly preferably 1, and

    • c) optionally one or more compounds selected from the group of formulae IV and V, preferably being dielectrically neutral:







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in which

    • R41 and R42, independently of one another, have the meaning indicated above for R2 under formula II, preferably R41 denotes alkyl and R42 denotes alkyl or alkoxy or R41 denotes alkenyl and R42 denotes alkyl,




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      • independently of one another and, if









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occurs twice,

      • also these independently of one another, denote




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      • preferably one or more of









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      • denotes or denote,









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    • Z41 and Z42, independently of one another and, if Z41 occurs twice, also these independently of one another, denote —CH2CH2—, —COO—, trans-CH═CH—, trans-CF═CF—, —CH2O—, —CF2O—, —C═C— or a single bond, preferably one or more thereof denotes/denote a single bond, and

    • p denotes 0, 1 or 2, preferably 0 or 1, and

    • R51 and R52, independently of one another, have one of the meanings given for R41 and R42 and preferably denote alkyl having 1 to 7 C atoms, preferably n-alkyl, particularly preferably n-alkyl having 1 to 5 C atoms, alkoxy having 1 to 7 C atoms, preferably n-alkoxy, particularly preferably n-alkoxy having 2 to 5 C atoms, alkoxyalkyl, alkenyl or alkenyloxy having 2 to 7 C atoms, preferably having 2 to 4 C atoms, preferably alkenyloxy,







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      • if present, each, independently of one another, denote









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preferably




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preferably




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denotes




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and, if present,




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preferably denotes




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    • Z51 to Z53 each, independently of one another, denote —CH2—CH2—, —CH2—O—, —CH═CH—, —C≡C—, —COO— or a single bond, preferably —CH2—CH2—, —CH2—O— or a single bond and particularly preferably a single bond,

    • i and j each, independently of one another, denote 0 or 1,

    • (i+j) preferably denotes 0, 1 or 2, more preferably 0 or 1 and, most preferably, 1,

    • d) again optionally, either alternatively or additionally, one or more compounds selected from the group of formulae VI to IX, preferably being dielectrically negative:







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    • wherein

    • R61 denotes an unsubstituted alkyl radical having 1 to 7 C atoms, preferably a straight-chain alkyl radical, more preferably an n-alkyl radical, most preferably propyl or pentyl, an unsubstituted alkenyl radical having 2 to 7 C atoms, preferably a straight-chain alkenyl radical, particularly preferably having 2 to 5 C atoms, an unsubstituted alkoxy radical having 1 to 6 C atoms or an unsubstituted alkenyloxy radical having 2 to 6 C atoms,

    • R62 denotes an unsubstituted alkyl radical having 1 to 7 C atoms, an unsubstituted alkoxy radical having 1 to 6 C atoms or an unsubstituted alkenyloxy radical having 2 to 6 C atoms, and

    • I denotes 0 or 1,

    • R71 denotes an unsubstituted alkyl radical having 1 to 7 C atoms, preferably a straight-chain alkyl radical, more preferably an n-alkyl radical, most preferably propyl or pentyl, or an unsubstituted alkenyl radical having 2 to 7 C atoms, preferably a straight-chain alkenyl radical, particularly preferably having 2 to 5 C atoms,

    • R72 denotes an unsubstituted alkyl radical having 1 to 7 C atoms, preferably having 2 to 5 C atoms, an unsubstituted alkoxy radical having 1 to 6 C atoms, preferably having 1, 2, 3 or 4 C atoms, or an unsubstituted alkenyloxy radical having 2 to 6 C atoms, preferably having 2, 3 or 4 C atoms, and







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denotes




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    • R81 denotes an unsubstituted alkyl radical having 1 to 7 C atoms, preferably a straight-chain alkyl radical, more preferably an n-alkyl radical, most preferably propyl or pentyl, or an unsubstituted alkenyl radical having 2 to 7 C atoms, preferably a straight-chain alkenyl radical, particularly preferably having 2 to 5 C atoms,

    • R82 denotes an unsubstituted alkyl radical having 1 to 7 C atoms, preferably having 2 to 5 C atoms, an unsubstituted alkoxy radical having 1 to 6 C atoms, preferably having 1, 2, 3 or 4 C atoms, or an unsubstituted alkenyloxy radical having 2 to 6 C atoms, preferably having 2, 3 or 4 C atoms,







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denotes




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      • preferably









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      • more preferably









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    • Z8 denotes —(C═O)—O—, —CH2—O—, —CF2—O— or —CH2—CH2—, preferably
      • —(C═O)—O— or —CH2—O—, and

    • o denotes 0 or 1,

    • R91 and R92 independently of one another have the meaning given for R72 above,

    • R91 preferably denotes an alkyl radical having 2 to 5 C atoms, preferably having 3 to 5 C atoms,

    • R92 preferably denotes an alkyl or alkoxy radical having 2 to 5 C atoms, more preferably an alkoxy radical having 2 to 4 C atoms, or an alkenyloxy radical having 2 to 4 C atoms.







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denotes




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    • p and q independently of each other denote 0 or 1, and

    • (p+q) preferably denotes 0 or 1, and in case







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denotes




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    • alternatively, preferably p=q=1,

    • e) again optionally, one or more compounds of formula I, having both a high dielectric constant perpendicular to the director and parallel to the director, preferably in a concentration in the range from 1% to 60%, more preferably in the range from 5% to 40%, particularly preferably in the range from 8% to 35%,







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in which




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denotes




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denotes




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    • n denotes 0 or 1,

    • R11 and R12 independently of each other denote alkyl, alkoxy, fluorinated alkyl or fluorinated alkoxy, preferably having 1 to 7 C atoms, alkenyl, alkenyloxy, alkoxyalkyl or fluorinated alkenyl having 2 to 7 C atoms and preferably alkyl, alkoxy, alkenyl or alkenyloxy, most preferably alkyl, alkoxy or alkenyloxy, and R11 alternatively denotes R1 and R12 alternatively denotes X1,

    • R1 denotes alkyl, alkoxy, fluorinated alkyl or fluorinated alkoxypreferably having 1 to 7 C atoms, alkenyl, alkenyloxy, alkoxyalkyl or fluorinated alkenyl having 2 to 7 C atoms and preferably alkyl or alkenyl, and

    • X1 denotes F, Cl, fluorinated alkyl, fluorinated alkenyl, fluorinated alkoxy or fluorinated alkenyoxy, the latter four groups preferably having 1 to 4 C atoms, preferably F, Cl, CF3 or OCF3, in particular for formulae I-1 and I-2 preferably F and for formula I-4 preferably OCF3 and

    • f) again optionally, one or more compounds of formula S0, having both a high dielectric constant perpendicular to the director and parallel to the director, preferably in a concentration in the range from 1% to 60%, more preferably in the range from 5% to 40%, particularly preferably in the range from 8% to 35%,







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    • in which







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denotes




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denotes




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    • RS1 and RS2 independently of each other denote alkyl, alkoxy, fluorinated alkyl or fluorinated alkoxy, preferably having 1 to 7 C atoms, alkenyl, alkenyloxy, alkoxyalkyl or fluorinated alkenyl having 2 to 7 C atoms and preferably alkyl, alkoxy, alkenyl or alkenyloxy, most preferably alkyl, alkoxy or alkenyloxy, and RS1 alternatively denotes RS and RS2 alternatively denotes XS,

    • RS and XS have the meanings given under formula S above

    • n denotes 0, and in case RS2 denotes XS, alternatively may denote 1.





The liquid-crystalline media in accordance with the present application preferably have a nematic phase.


Preferably the compounds of formula B are selected from the group of compounds of formulae B-1 and B-2:




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in which

    • RB denotes alkyl, alkoxy, fluorinated alkyl or fluorinated alkoxy, preferably having 1 to 7 C atoms, alkenyl, alkenyloxy, alkoxyalkyl or fluorinated alkenyl having 2 to 7 C atoms and preferably alkyl or alkenyl, and
    • XB denotes F, Cl, CN, NCS, fluorinated alkyl, fluorinated alkenyl, fluorinated alkoxy or fluorinated alkenlyoxy, the latter four groups preferably having 1 to 4 C atoms, preferably F, Cl, CF3 or OCF3, more preferably F, CF3, or OCF3 and, most preferably, OCF3 or CF3.


Preferably the compounds of formula S are selected from the group of compounds of formulae S-1 and S-2:




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in which

    • RS denotes alkyl, alkoxy, fluorinated alkyl or fluorinated alkoxy, preferably having 1 to 7 C atoms, alkenyl, alkenyloxy, alkoxyalkyl or fluorinated alkenyl having 2 to 7 C atoms and preferably alkyl, alkoxy, alkenyl or alkenyloxy, most preferably alkoxy or alkenyloxy,
    • XS denotes F, Cl, CN, NCS, fluorinated alkyl, fluorinated alkenyl, fluorinated alkoxy or fluorinated alkenyloxy, the latter four groups preferably having 1 to 4 C atoms, preferably F, Cl, CF3 or OCF3, more preferably CF3 or OCF3.


The compounds of formula B are prepared according to the following scheme (Scheme B 1).




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wherein the parameters have the respective meanings given under formula B above.


The stereomers of B-1, if any, are separated by usual means, such as flash chromatography and or re-recystallization, either with or without use of seed crystals, which may be applied as single, sole steps or repeatedly and/or in combination with each other. The process and the subsequent work-up of the reaction mixture can basically be carried out as batch reaction or in a continuous reaction manner. The continuous reaction manner comprises, for example, the reaction in a continuous stirred-tank reactor, a stirred-reactor cascade, a loop or cross-flow reactor, a flow tube or in a micro-reactor. The reaction mixtures are optionally worked up, as required, by filtration via solid phases, chromatography, separation between immiscible phases (for example extraction), adsorption on solid supports, distilling-off of solvents and/or azeotropic mixtures, selective distillation, sublimation, crystallization, co-crystallization or by nanofiltration on membranes.


The compounds of formula I are prepared according to WO 02/055463 and compounds of the formula I-1, containing two alkoxy groups (R11=>R1—O; R12=>R2—O) are preferably prepared starting from the basic compound dibenzofuran according to the following scheme: (Scheme B 2).




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The compounds of formula I-1 containing one alkoxy group (R1—O) and one alkyl group (R2), (R11=>R1—O; R12=>R2) are preferably prepared starting from the basic compound dibenzofuran according to the following scheme: (Scheme B 3).




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The compounds of formula I-1, containing two alkyl groups (R11=>R1; R12=>R2), are preferably prepared starting from the basic compound dibenzofuran according to the following scheme: (Scheme B 4).




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The compounds of formula I-2 are preferably prepared e.g. according to the following scheme (Scheme B 5).




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The compounds of formula S, and in particular of formulae S-1 and S-2, may be prepared via various synthetic route. The essential step is in all cases the formation of the S-heterocyclic ring system via successive Migita coupling and closure of the ring induced by a base. These reactions optionally, and in many cases beneficially, may be performed as a “one pot” (or “single pot”) reaction.


The compounds of formula S-1 are prepared similar to the synthesis of compounds of formula I-3 according to WO 02/055463 and compounds of the formula S-1 containing two alkoxy groups: (Scheme S 1)




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Remarks:


X1═F, CF3 or OCF3; R=ethyl or 2-ethylhexyl, R1=alkyl or, in case of 1,4-cyclohexenylene compound, alternatively also alkenyl.


Instead of the cyclohexanone compound also a respective cyclohexylcyclohexanone derivative may be used.


An alternative synthetic route is exemplified for the following propyl homologue of formula S-1.




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Remarks:


X1═F, CF3 or OCF3; R=ethyl or 2-ethylhexyl, R1=alkyl or alkenyl. (Tf=trifluoromethanesulfonyl=—SO2—CF3


Also here the product may be hydrogenated, leading to the corresponding 1,4-cyclohexylene compound and instead of the cyclohexanone compound also a respective cyclohexylcyclohexanone derivative may be used.


Particularly suitable synthetic routes to the compounds of formulae S-1 and S-2 used according to the invention are explained below with reference to Scheme S 3.




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Scheme 3 should only be regarded as illustrative. The person skilled in the art will be able to carry out corresponding variations of the syntheses presented, and also follow other suitable synthetic routes, in order to obtain compounds of the formulae S-1 and S-2.


In accordance with the synthesis depicted above and below, the present invention in an embodiment also encompasses one or more processes for the preparation of compounds of the formulae S-1 and S-2.


The invention thus encompasses a process for the preparation of compounds of the formula I which is characterised in that it comprises a process step in which a compound of the formula II is converted into compounds of the formulae S-1 and S-2 in the presence of a base, as shown in Scheme S 4 and in which R, A, Z, X1, X2, W and m have the meaning indicated above and G denotes —OH, —SH or SG′ and G′ denotes a base-labile protecting group for thiols. Preferred protecting groups are acetyl, dimethylaminocarbonyl, 2-tetrahydropyranyl, ethoxycarbonylethyl, tert-butyl, methyl and 2-ethylhexyloxycarbonyl-ethyl, particularly preferably ethoxycarbonylethyl or 2-ethylhexyloxy-carbonylethyl.




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The process and the subsequent work-up of the reaction mixture can basically be carried out as a batch reaction or in a continuous reaction procedure. The continuous reaction procedure encompasses, for example, reaction in a continuous stirred-tank reactor, a stirred-reactor cascade, a loop or cross-flow reactor, a flow tube or in a micro reactor. The reaction mixtures are optionally worked up, as necessary, by filtration via solid phases, chromatography, separation between immiscible phases (for example extraction), adsorption onto solid supports, removal of solvents and/or azeotropic mixtures by distillation, selective distillation, sublimation, crystallisation, co-crystallisation or by nanofiltration on membranes.


The invention furthermore relates to the use of liquid-crystal mixtures and liquid-crystalline media according to the invention in IPS and FFS displays, in particular the use in SG-FFS displays containing a liquid-crystalline medium, for improving the response times and/or the transmission.


The invention furthermore relates to a liquid-crystal display containing a liquid-crystalline medium according to the invention, in particular an IPS or FFS display, particularly preferably a FFS or SG-FFS display.


The invention furthermore relates to a liquid-crystal display of the IPS or FFS type comprising a liquid-crystal cell consisting of two substrates, where at least one substrate is transparent to light and at least one substrate has an electrode layer, and a layer, located between the substrates, of a liquid-crystalline medium comprising a polymerised component and a low-molecular-weight component, where the polymerised component is obtainable by polymerisation of one or more polymerisable compounds in the liquid-crystalline medium between the substrates of the liquid-crystal cell, preferably with application of an electrical voltage and where the low-molecular-weight component is a liquid-crystal mixture according to the invention as described above and below.


The displays in accordance with the present invention are preferably addressed by an active matrix (active matrix LCDs, AMDs for short), preferably by a matrix of thin-film transistors (TFTs). However, the liquid crystals according to the invention can also be used in an advantageous manner in displays having other known addressing means.


The invention furthermore relates to a process for the preparation of a liquid-crystalline medium according to the invention by mixing one or more compounds of formula S, preferably selected from the group of compounds of formulae S-1 and S-2 with one or more low-molecular-weight liquid-crystalline compounds, or a liquid-crystal mixture and optionally with further liquid-crystalline compounds and/or additives.


The following meanings apply above and below:


The term “FFS” is, unless indicated otherwise, used to represent FFS and SG-FFS displays.


The term “mesogenic group” is known to the person skilled in the art and is described in the literature, and denotes a group which, due to the anisotropy of its attracting and repelling interactions, essentially contributes to causing a liquid-crystalline (LC) phase in low-molecular-weight or polymeric substances. Compounds containing mesogenic groups (mesogenic compounds) do not necessarily have to have a liquid-crystalline phase themselves. It is also possible for mesogenic compounds to exhibit liquid-crystalline phase behaviour only after mixing with other compounds and/or after polymerisation. Typical mesogenic groups are, for example, rigid rod- or disc-shaped units. An overview of the terms and definitions used in connection with mesogenic or liquid-crystalline compounds is given in Pure Appl. Chem. 73(5), 888 (2001) and C. Tschierske, G. PeIzl, S. Diele, Angew. Chem. 2004, 116, 6340-6368.


The term “spacer group” or “spacer” for short, also referred to as “Sp” above and below, is known to the person skilled in the art and is described in the literature, see, for example, Pure Appl. Chem. 73(5), 888 (2001) and C. Tschierske, G. PeIzl, S. Diele, Angew. Chem. 2004, 116, 6340-6368. Unless indicated otherwise, the term “spacer group” or “spacer” above and below denotes a flexible group which connects the mesogenic group and the polymerisable group(s) to one another in a polymerisable mesogenic compound.


For the purposes of this invention, the term “liquid-crystalline medium” is intended to denote a medium which comprises a liquid-crystal mixture and one or more polymerisable compounds (such as, for example, reactive mesogens). The term “liquid-crystal mixture” (or “host mixture”) is intended to denote a liquid-crystalline mixture which consists exclusively of unpolymerisable, low-molecular-weight compounds, preferably of two or more liquid-crystalline compounds and optionally further additives, such as, for example, chiral dopants or stabilisers.


Particular preference is given to liquid-crystal mixtures and liquid-crystalline media which have a nematic phase, in particular at room temperature.


In a preferred embodiment of the present invention, the liquid-crystal medium comprises one or more compounds of formula I, preferably selected from the group of compounds of formulae I-1 to I-4




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in which the parameters have the meanings given above and preferably

    • R11 and R12 independently of each other denote alkyl, alkoxy, fluorinated alkyl or fluorinated alkoxy, preferably having 1 to 7 C atoms, alkenyl, alkenyloxy, alkoxyalkyl or fluorinated alkenyl having 2 to 7 C atoms and preferably alkyl, alkoxy, alkenyl or alkenyloxy, most preferably alkoxy or alkenyloxy,
    • R1 denotes alkyl, alkoxy, fluorinated alkyl or fluorinated alkoxypreferably having 1 to 7 C atoms, alkenyl, alkenyloxy, alkoxyalkyl or fluorinated alkenyl having 2 to 7 C atoms and preferably alkyl or alkenyl, and
    • X1 denotes F, Cl, CN, NCS, fluorinated alkyl, fluorinated alkenyl, fluorinated alkoxy or fluorinated alkenyoxy, the latter four groups preferably having 1 to 4 C atoms, preferably F, Cl, CF3 or OCF3, in particular for formulae I-1 and I-2 preferably F and for formula I-4 preferably OCF3.


In a preferred embodiment of the present invention, the liquid-crystal medium comprises one or more compounds of formula S0, preferably selected from the group of compounds of formulae S0-1 and S0-2




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in which the parameters have the meanings given above and preferably

    • RS1 and RS2 independently of each other denote alkyl, alkoxy, fluorinated alkyl or fluorinated alkoxy, preferably having 1 to 7 C atoms, alkenyl, alkenyloxy, alkoxyalkyl or fluorinated alkenyl having 2 to 7 C atoms and preferably alkyl, alkoxy, alkenyl or alkenyloxy, most preferably alkoxy or alkenyloxy,
    • XS denotes F, Cl, CN, NCS, fluorinated alkyl, fluorinated alkenyl, fluorinated alkoxy or fluorinated alkenyoxy, the latter four groups preferably having 1 to 4 C atoms, preferably F, Cl, CF3 or OCF3, more preferably CF3 or OCF3.


In a preferred embodiment of the present invention, the liquid-crystal medium comprises one or more dielectrically positive compounds having a dielectric anisotropy of 3 or more, selected from the group of the compounds of the formulae II-1 and II-2:




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in which the parameters have the respective meanings indicated above under formula II, and L23 and L24, independently of one another, denote H or F, preferably L23 denotes F, and




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has one of the meanings given for




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and, in the case of formulae II-1 and II-2, X2 preferably denotes F or OCF3, particularly preferably F, and, in the case of formula II-2,




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independently of one another, preferably denote




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and/or selected from the group of the compounds of the formulae III-1 and III-2:




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in which the parameters have the meanings given under formula III,


and the media in accordance with the present invention may comprise, alternatively or in addition to the compounds of the formulae III-1 and/or III-2, one or more compounds of the formula III-3




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in which the parameters have the respective meanings indicated above, and the parameters L31 and L32, independently of one another and of the other parameters, denote H or F.


The liquid-crystal medium preferably comprises compounds selected from the group of the compounds of the formulae II-1 and II-2 in which L21 and L22 and/or L23 and L24 both denote F.


In a preferred embodiment, the liquid-crystal medium comprises compounds selected from the group of the compounds of the formulae II-1 and II-2 in which L21, L22, L23 and L24 all denote F.


The liquid-crystal medium preferably comprises one or more compounds of the formula II-1. The compounds of the formula II-1 are preferably selected from the group of the compounds of the formulae II-1 a to II-1e, preferably one or more compounds of formulaell-1a and/or II-1 b and/or II-1d, preferably of formula II-1a and/or II-1d or II-1 b and/or II-1d, most preferably of formula II-1d:




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in which the parameters have the respective meanings indicated above, and L25 and L26, independently of one another and of the other parameters, denote H or F, and preferably


in the formulae II-1 a and II-1b,


L21 and L22 both denote F,


in the formulae II-1c and II-1d,


L21 and L22 both denote F and/or L23 and L24 both denote F, and in formula II-1e,


L21, L22 and L23 denote F.


The liquid-crystal medium preferably comprises one or more compounds of the formula II-2, which are preferably selected from the group of the compounds of the formulae II-2a to II-2k, preferably one or more compounds each of formulae II-2a and/or II-2h and/or II-2j:




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in which the parameters have the respective meanings indicated above, and L25 to L28, independently of one another, denote H or F, preferably L27 and L28 both denote H, particularly preferably L26 denotes H.


The liquid-crystal medium preferably comprises compounds selected from the group of the compounds of the formulae II-1a to II-1e in which L21 and L22 both denote F and/or L23 and L24 both denote F.


In a preferred embodiment, the liquid-crystal medium comprises compounds selected from the group of the compounds of the formulae II-2a to II-2k in which L21, L22, L23 and L24 all denote F.


Especially preferred compounds of the formula II-2 are the compounds of the following formulae, particularly preferred of formulae II-2a-1 and/or II-2h-1 and/or II-2k-2:




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in which R2 and X2 have the meanings indicated above, and X2 preferably denotes F.


The liquid-crystal medium preferably comprises one or more compounds of the formula III-1. The compounds of the formula III-1 are preferably selected from the group of the compounds of the formulae III-1 a to III-1j, preferably from formulae III-1c, III-1f, III-1g and III-1j:




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in which the parameters have the meanings given above and preferably in which the parameters have the respective meanings indicated above, the parameters L35 and L36, independently of one another and of the other parameters, denote H or F, and the parameters L35 and L36, independently of one another and of the other parameters, denote H or F.


The liquid-crystal medium preferably comprises one or more compounds of the formula III-1c, which are preferably selected from the group of the compounds of the formulae III-1c-1 to III-1c-5, preferably of formulae III-1c-1 and/or III-1c-2, most preferably of formula III-1c-1:




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in which R3 has the meaning indicated above.


The liquid-crystal medium preferably comprises one or more compounds of the formula III-1f, which are preferably selected from the group of the compounds of the formulae III-1f-1 to III-1f-6, preferably of formulae III-1f-1 and/or III-1f-2 and/or III-1f-3 and /or III-1f-6, more preferably of formula III-1f-3 and/or III-1f-6, more preferably of formula III-1f-6:




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in which R3 has the meaning indicated above.


The liquid-crystal medium preferably comprises one or more compounds of the formula III-1g, which are preferably selected from the group of the compounds of the formulae III-1g-1 to III-1g-5, preferably of formula III-1g-3:




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in which R3 has the meaning indicated above.


The liquid-crystal medium preferably comprises one or more compounds of the formula III-1h, which are preferably selected from the group of the compounds of the formulae III-1h-1 to III-1 h-3, preferably of the formula III-1 h-3:




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in which the parameters have the meanings given above, and X3 preferably denotes F.


The liquid-crystal medium preferably comprises one or more compounds of the formula III-1i, which are preferably selected from the group of the compounds of the formulae III-1i-1 and III-1i-2, preferably of the formula III-1i-2:




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in which the parameters have the meanings given above, and X3 preferably denotes F.


The liquid-crystal medium preferably comprises one or more compounds of the formula III-1j, which are preferably selected from the group of the compounds of the formulae III-1j-1 and III-1j-2, preferably of the formula III-1j-1:




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in which the parameters have the meanings given above.


The liquid-crystal medium preferably comprises one or more compounds of the formula III-2. The compounds of the formula III-2 are preferably selected from the group of the compounds of the formulae III-2a and III-2b, preferably of formula III-2b:




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in which the parameters have the respective meanings indicated above, and the parameters L33 and L34, independently of one another and of the other parameters, denote H or F.


The liquid-crystal medium preferably comprises one or more compounds of the formula III-2a, which are preferably selected from the group of the compounds of the formulae III-2a-1 to III-2a-6:




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in which R3 has the meaning indicated above.


The liquid-crystal medium preferably comprises one or more compounds of the formula III-2b, which are preferably selected from the group of the compounds of the formulae III-2b-1 to III-2b-4, preferably III-2b-4:




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in which R3 has the meaning indicated above.


Alternatively or in addition to the compounds of the formulae III-1 and/or III-2, the media in accordance with the present invention may comprise one or more compounds of the formula III-3




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in which the parameters have the respective meanings indicated above under formula III.


These compounds are preferably selected from the group of the formulae III-3a and III-3b:




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in which R3 has the meaning indicated above.


The liquid-crystalline media in accordance with the present invention preferably comprise one or more dielectrically neutral compounds, preferably having a dielectric anisotropy in the range from −1.5 to 3, preferably selected from the group of the compounds of the formulae VI, VII, VIII and IX.


In the present application, the elements all include their respective isotopes. In particular, one or more H in the compounds may be replaced by D, and this is also particularly preferred in some embodiments. A correspondingly high degree of deuteration of the corresponding compounds enables, for example, detection and recognition of the compounds. This is very helpful in some cases, in particular in the case of the compounds of formula I.


In the present application,

    • alkyl particularly preferably denotes straight-chain alkyl, in particular CH3—, C2H5—, n-C3H7—, n-C4H9— or n-C5H11—, and
    • alkenyl particularly preferably denotes CH2═CH—, E-CH3—CH═CH—, CH2═CH—CH2—CH2—, E-CH3—CH═CH—CH2—CH2— or E-(n-C3H7)—CH═CH—.


In a preferred embodiment of the present invention, the media according to the invention in each case comprise one or more compounds of formula VI selected from the group of the compounds of the formulae VI-1 and VI-2, preferably one or more compounds each of formulae VI-1 and one or more compounds of formula VI-2,




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    • in which the parameters have the respective meanings given above under formula VI, and preferably in formula VI-1

    • R61 and R62 independently of each other denote methoxy, ethoxy, propoxy, butoxy (also or pentoxy, preferably ethoxy, butoxy or pentoxy, more preferably ethoxy or butoxy and, most preferably butoxy.

    • in formula VI-2

    • R61 preferably denotes vinyl, 1-E-propenyl, but-4-en-1-yl, pent-1-en-1-yl or pent-3-en-1-yl and n-propyl or n-pentyl and

    • R62 denotes an unsubstituted alkyl radical having 1 to 7 C atoms, preferably having 2 to 5 C atoms, or, preferably, an unsubstituted alkoxy radical having 1 to 6 C atoms, particularly preferably having 2 or 4 C atoms and, most preferably, ethoxy, and





In a preferred embodiment of the present invention, the media according to the invention in each case comprise one or more compounds of formula VII selected from the group of the compounds of the formulae VII-1 to VII-3, preferably one or more compounds each of the formulae VII-1 and one or more compounds of formula VII-2,




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    • in which the parameters have the respective meanings given above under formula VII, and preferably
      • R71 denotes vinyl, 1-E-propenyl, but-4-en-1-yl, pent-1-en-1-yl or pent-3-en-1-yl, n-propyl or n-pentyl and
      • R72 denotes an unsubstituted alkyl radical having 1 to 7 C atoms, preferably having 2 to 5 C atoms, or, preferably, an unsubstituted alkoxy radical having 1 to 6 C atoms, particularly preferably having 2 or 4 C atoms and, most preferably, ethoxy.





In a preferred embodiment of the present invention, the media according to the invention in each case comprise one or more compounds of formula VI-1 selected from the group of the following compounds:




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In a preferred embodiment of the present invention, the media according to the invention in each case comprise one or more compounds of formula VI-2 selected from the group of the following compounds:




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In a preferred embodiment of the present invention, the media according to the invention in each case comprise one or more compounds of formula VII-1 selected from the group of the following compounds:




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In a preferred embodiment of the present invention, the media according to the invention in each case comprise one or more compounds of formula VII-2 selected from the group of the following compounds:




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In addition to the compounds of formula I or the preferred sub-formulae thereof, the media in accordance with the present invention preferably comprise one or more, preferably dielectrically neutral, compounds selected from the group of compounds of the formulae VI and VII, preferably in a total concentration in the range from 5% or more to 90% or less, preferably from 10% or more to 80% or less, particularly preferably from 20% or more to 70% or less.


In a preferred embodiment of the present invention, the media according to the invention in each case comprise one or more compounds of formula VIII selected from the group of the compounds of the formulae VIII-1 to VIII-3, preferably one or more compounds each of the formulae VIII-1 and/or one or more compounds of formula VIII-3,




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    • in which the parameters have the respective meanings given above under formula VIII, and preferably
      • R81 denotes vinyl, 1-E-propenyl, but-4-en-1-yl, pent-1-en-1-yl or pent-3-en-1-yl, ethyl, n-propyl or n-pentyl, alkyl, preferably ethyl, n-propyl or n-pentyl and
      • R82 denotes an unsubstituted alkyl radical having 1 to 7 C atoms, preferably having 1 to 5 C atoms or an unsubstituted alkoxy radical having 1 to 6 C atoms.





In formulae VIII-1 and VIII-2 R82denotes preferably alkoxy having 2 or 4 C atoms and, most preferably, ethoxy and in formula VIII-3 it denotes preferably alkyl, preferably methyl, ethyl or n-propyl, most preferably methyl.


In a further preferred embodiment, the medium comprises one or more compounds of formula IV


one or more compounds of formula IV




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in which

    • R41 denotes an unsubstituted alkyl radical having 1 to 7 C atoms or an unsubstituted alkenyl radical having 2 to 7 C atoms, preferably an n-alkyl radical, particularly preferably having 2, 3, 4 or 5 C atoms, and
    • R42 denotes an unsubstituted alkyl radical having 1 to 7 C atoms, an unsubstituted alkenyl radical having 2 to 7 C atoms, or an unsubstituted alkoxy radical having 1 to 6 C atoms, both preferably having 2 to 5 C atoms, an unsubstituted alkenyl radical having 2 to 7 C atoms, preferably having 2, 3 or 4 C atoms, more preferably a vinyl radical or 1-propenyl radical and in particular a vinyl radical.


In a particularly preferred embodiment, the medium comprises one or more compounds of formula IV selected from the group of the compounds of the formulae IV-1 to IV-4, preferably of formula IV-1,




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in which

    • alkyl and alkyl′, independently of one another, denote alkyl having 1 to 7 C atoms, preferably having 2 to 5 C atoms,
    • alkenyl and alkenyl′ independently of one another, denote an alkenyl radical having 2 to 5 C atoms, preferably having 2 to 4 C atoms, particularly preferably 2 C atoms,
    • alkenyl′ denotes an alkenyl radical having 2 to 5 C atoms, preferably having 2 to 4 C atoms, particularly preferably having 2 to 3 C atoms, and
    • alkoxy denotes alkoxy having 1 to 5 C atoms, preferably having 2 to 4 C atoms.


In a particularly preferred embodiment, the media according to the invention comprise one or more compounds of formula IV-1 and/or one or more compounds of formula IV-2.


In a further preferred embodiment, the medium comprises one or more compounds of formula V.


The media according to the invention preferably comprise the following compounds in the total concentrations indicated:

    • 1-60%, preferably 1-to 30%, by weight of one or more compounds selected from the group of the compounds of formula B and
    • 1-60%, preferably 1-30%, by weight of one or more compounds selected from the group of the compounds of formula S and
    • 2-61%, preferably 3-50%, by weight of one or more compounds selected from the group of the compounds of formulae B and S and,
    • 0-60%, preferably 1-by 60%, by weight of one or more compounds selected from the group of the compounds of formula I and/or
    • 5-60% by weight of one or more compounds of formula II, preferably selected from the group of the compounds of the formulae II-1 and II-2 and/or
    • 5-25% by weight of one or more compounds of formula III, and/or
    • 5-45% by weight of one or more compounds of formula IV and/or
    • 5-25% by weight of one or more compounds of formula V, and/or
    • 5-25% by weight of one or more compounds of formula VI, and/or
    • 5-20% by weight of one or more compounds of formula VII, and/or
    • 5-30% by weight of one or more compounds of formula VIII, preferably selected from the group of the compounds of the formulae VIII-1 and VIII-2 and/or
    • 0-60% by weight of one or more compounds of formula IX,
    • where the total content of all compounds of formulae B, S, S0 and I to IX, which are present, in the medium preferably is 95% or more and, more preferably 100%.


The latter condition is preferred for all media according to the present application.


In a further preferred embodiment, the media in accordance with the present invention in addition to the compounds of formula S or the preferred sub-formulae thereof, and/or of formula I or the preferred sub-formulae thereof and to the compounds of formulae VI and/or VII and/or VIII and/or IX, preferably comprise one or more, preferably dielectrically neutral, compounds selected from the group of compounds of formulae IV and V preferably in a total concentration in the range from 5% or more to 90% or less, preferably from 10% or more to 80% or less, particularly preferably from 20% or more to 70% or less.


The medium according to the invention in a particularly preferred embodiment comprises

    • one or more compounds of formula II in a total concentration in the range from 5% or more to 50% or less, preferably in the range from 10% or more to 40% or less, and/or
    • one or more compounds of formula VII-1 in a total concentration in the range from 5% or more to 30% or less, and/or
    • one or more compounds of formula VII-2 in a total concentration in the range from 3% or more to 30% or less.


Preferably the concentration of the compounds of formula S in the media according to the invention is in the range from 1% or more to 60% or less, more preferably from 5% or more to 40% or less, most preferably from 8% or more to 35% or less


Preferably the concentration of the compounds of formula I, if present, in the media according to the invention is in the range from 1% or more to 60% or less, more preferably from 5% or more to 40% or less, most preferably from 8% or more to 35% or less


In a preferred embodiment of the present invention the media comprise one or more compounds of formula S, preferably selected from the group of formulae S-1 and S-2 and one or more compounds of formula I, preferably selected from the group of formulae I-1 to I-4, preferably of formulae I-3 and/or I-4.


In a preferred embodiment of the present invention the concentration of the compounds of formula II in the media is in the range from 3% or more to 60% or less, more preferably from 5% or more to 55% or less, more preferably from 10% or more to 50% or less and, most preferably, from 15% or more to 45% or less.


In a preferred embodiment of the present invention the concentration of the compounds of formula VII in the media is in the range from 2% or more to 50% or less, more preferably from 5% or more to 40% or less, more preferably from 10% or more to 35% or less and, most preferably, from 15% or more to 30% or less.


In a preferred embodiment of the present invention the concentration of the compounds of formula VII-1 in the media is in the range from 1% or more to 40% or less, more preferably either from 2% or more to 35% or less, or, alternatively, from 15% or more to 25% or less.


In a preferred embodiment of the present invention the concentration of the compounds of formula VII-2 in the media, if present, is in the range from 1% or more to 40% or less, more preferably from 5% or more to 35% or less and, most preferably, from 10% or more to 30% or less.


The present invention also relates to electro-optical displays or electro-optical components which contain liquid-crystalline media according to the invention. Preference is given to electro-optical displays which are based on the VA, ECB, IPS or FFS effect, preferably on the VA; IPS or FFS effect, and in particular those which are addressed by means of an active-matrix addressing device.


Accordingly, the present invention likewise relates to the use of a liquid-crystalline medium according to the invention in an electro-optical display or in an electro-optical component, and to a process for the preparation of the liquid-crystalline media according to the invention, characterised in that one or more compounds of formula I are mixed with one or more compounds of formula II, preferably with one or more compounds of the sub-formulae II-1 and/or II-2 and/or with one or more compounds of formula VII, preferably with one or more compounds of the sub-formulae VII-1 and/or VII-2, particularly preferably one or more compounds from two or more, preferably from three or more, different formulae thereof and very particularly preferably from all four of these formulae II-1, II-2, VII-1 and VII-2 and one or more further compounds, preferably selected from the group of the compounds of the formulae IV and V, more preferably with one or more compounds both of formula IV and of formula V.


In a further preferred embodiment, the medium comprises one or more compounds of formula IV, selected from the group of the compounds of the formulae IV-2 and IV-3,




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in which

    • alkyl and alkyl′, independently of one another, denote alkyl having 1 to 7 C atoms, preferably having 2 to 5 C atoms,
    • alkoxy denotes alkoxy having 1 to 5 C atoms, preferably having 2 to 4 C atoms.


In a further preferred embodiment, the medium comprises one or more compounds of formula V selected from the group of the compounds of the formulae V-1 and V-2, preferably of formulae V-1,




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in which the parameters have the meanings given above under formula V, and preferably

    • R51 denotes alkyl having 1 to 7 C atoms or alkenyl having 2 to 7 C atoms, and
    • R52 denotes alkyl having 1 to 7 C atoms, alkenyl having 2 to 7 C atoms or alkoxy having 1 to 6 C atoms, preferably alkyl or alkenyl, particularly preferably alkyl.


In a further preferred embodiment, the medium comprises one or more compounds of formula V-1 selected from the group of the compounds of the formulae V-1a and V-1b,




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in which

    • alkyl and alkyl′, independently of one another, denote alkyl having 1 to 7 C atoms, preferably having 2 to 5 C atoms, and
    • alkenyl denotes alkenyl having 2 to 7 C atoms, preferably having 2 to 5 C atoms.


In addition, the present invention relates to a method for the reduction of the wavelength dispersion of the birefringence of a liquid-crystalline medium which comprises one or more compounds of formula II, optionally one or more compounds selected from the group of the compounds of the formulae VII-1 and VII-2 and/or one or more compounds of formula IV and/or one or more compounds of formula V, characterised in that one or more compounds of formula I are used in the medium.


Besides compounds of the formulae I to V, other constituents may also be present, for example in an amount of up to 45%, but preferably up to 35%, in particular up to 10%, of the mixture as a whole.


The media according to the invention may optionally also comprise a dielectrically positive component, whose total concentration is preferably 20% or less, more preferably 10% or less, based on the entire medium.


In a preferred embodiment, the liquid-crystal media according to the invention comprise in total, based on the mixture as a whole,


1% or more to 50% or less, preferably 2% or more to 35% or less, particularly preferably 3% or more to 25% or less, of the compound of formula S,


1% or more to 20% or less, preferably 2% or more to 15% or less, particularly preferably 3% or more to 12% or less, of the compound of formula I.


20% or more to 50% or less, preferably 25% or more to 45% or less, particularly preferably 30% or more to 40% or less, of compounds of formulae II and/or III, and


0% or more to 35% or less, preferably 2% or more to 30% or less, particularly preferably 3% or more to 25% or less, of compounds of formulae IV and/or V, and


5% or more to 50% or less 10% or more to 45% or less, preferably 15% or more to 40% or less of compounds of the formulae VI and/or VII and/or VIII and/or IX.


The liquid-crystal media in accordance with the present invention may comprise one or more chiral compounds.


Particularly preferred embodiments of the present invention meet one or more of the following conditions,


wher the acronyms (abbreviations) are explained in Tables A to C and illustrated by examples in Table D.


Preferably the media according to the present invention fulfil one or more of the following conditions.

    • i. The liquid-crystalline medium has a birefringence of 0.060 or more, particularly preferably 0.070 or more.
    • ii. The liquid-crystalline medium has a birefringence of 0.200 or less, particularly preferably 0.180 or less.
    • iii. The liquid-crystalline medium has a birefringence in the range from 0.090 or more to 0.120 or less.
    • iv. The liquid-crystalline medium comprises one or more particularly preferred compounds of formula 1-4.
    • v. The total concentration of the compounds of formula IV in the mixture as a whole is 25% or more, preferably 30% or more, and is preferably in the range from 25% or more to 49% or less, particularly preferably in the range from 29% or more to 47% or less, and very particularly preferably in the range from 37% or more to 44% or less.
    • vi. The liquid-crystalline medium comprises one or more compounds of formula IV selected from the group of the compounds of the following formulae: CC-n-V and/or CC-n-Vm and/or CC-V-V and/or CC-V-Vn and/or CC-nV-Vn, particularly preferably CC-3-V, preferably in a concentration of up to 60% or less, particularly preferably up to 50% or less, and optionally additionally CC-3-V1, preferably in a concentration of up to 15% or less, and/or CC-4-V, preferably in a concentration of up to 24% or less, particularly preferably up to 30% or less.
    • vii. The media comprise the compound of formula CC-n-V, preferably CC-3-V, preferably in a concentration of 1% or more to 60% or less, more preferably in a concentration of 3% or more to 35% or less.
    • viii. The total concentration of the compounds of formula CC-3-V in the mixture as a whole preferably either is 15% or less, preferably 10% or less or 20% or more, preferably 25% or more.
    • ix. The total concentration of the compounds of formula Y-nO-Om in the mixture as a whole is 2% or more to 30% or less, preferably 5% or more to 15% or less.
    • x. The total concentration of the compounds of formula CY-n-Om in the mixture as a whole is 5% or more to 60% or less, preferably 15% or more to 45% or less.
    • xi. The total concentration of the compounds of formula CCY-n-Om and/or CCY-n-m, preferably of CCY-n-Om, in the mixture as a whole is 5% or more to 40% or less, preferably 1% or more to 25% or less.
    • xii. The total concentration of the compounds of formula CLY-n-Om in the mixture as a whole is 5% or more to 40% or less, preferably 10% or more to 30% or less.
    • xiii. The liquid-crystalline medium comprises one or more compounds of formula IV, preferably of the formulae IV-1 and/or IV-2, preferably in a total concentration of 1% or more, in particular 2% or more, and very particularly preferably 3% or more to 50% or less, preferably 35% or less.
    • xiv. The liquid-crystalline medium comprises one or more compounds of formula V, preferably of the formulae V-1 and/or V-2, preferably in a total concentration of 1% or more, in particular 2% or more, and very particularly preferably 15% or more to 35%or less, preferably to 30% or less.
    • xv. The total concentration of the compounds of formula CCP-V-n, preferably CCP-V-1, in the mixture as a whole preferably is 5% or more to 30% or less, preferably 15% or more to 25% or less.
    • xvi. The total concentration of the compounds of formula CCP-V2-n, preferably CCP-V2-1, in the mixture as a whole preferably is 1% or more to 15% or less, preferably 2% or more to 10% or less.


The invention furthermore relates to an electro-optical display having active-matrix addressing based on the VA, ECB, IPS, FFS or UB-FFS effect, characterised in that it contains, as dielectric, a liquid-crystalline medium in accordance with the present invention.


The liquid-crystal mixture preferably has a nematic phase range having a width of at least 70 degrees.


The rotational viscosity γ1 is preferably 200 mPa·s or less, preferably 150·s or less and, in particular, 120 mPa·s or less.


The mixtures according to the invention are suitable for all IPS and FFS-TFT applications using dielectrically positive liquid crystalline media, such as, e.g. SG-FFS (Super Grip FFS).


The liquid-crystalline media according to the invention preferably virtually completely consist of 4 to 18, in particular 5 to 15, and particularly preferably 12 or less, compounds. These are preferably selected from the group of the compounds of the formulae B, S, S0, I, II III, IV, V, VI, VII, VIII and IX.


The liquid-crystalline media according to the invention may optionally also comprise more than 18 compounds. In this case, they preferably comprise 18 to 25 compounds.


In a preferred embodiment, the liquid-crystal media according to the invention predominantly consist of, preferably essentially consist of and, most preferably, virtually completely consist of compounds which do not comprise a cyano group.


In a preferred embodiment, the liquid-crystal media according to the invention comprise compounds selected from the group of the compounds of the formulae B, S, S0, I, II and III, IV and V and VI to IX, preferably selected from the group of the compounds of the formulae B-1, B-2, S-1, S-2, S0, preferably selected from S0-1 and S0-2, I, preferably selected from I-1, I-2, I-3 and I-4, II, preferably selected from II-1 and II-2, III, preferably selected from III-1 and III-2, IV, V, VII, preferably selected from VII-1 and VII-2, VIII and IX; they preferably consist predominantly, particularly preferably essentially and very particularly preferably virtually completely of the compounds of the said formulae.


The liquid-crystal media according to the invention preferably have a nematic phase from in each case at least −10° C. or less to 70° C. or more, particularly preferably from −20° C. or less to 80° C. or more, very particularly preferably from −30° C. or less to 85° C. or more and most preferably from −40° C. or less to 90° C. or more.


The expression “have a nematic phase” here means on the one hand that no smectic phase and no crystallisation are observed at low temperatures at the corresponding temperature and on the other hand that no clearing occurs on heating out of the nematic phase. The investigation at low temperatures is carried out in a flow viscometer at the corresponding temperature and checked by storage in test cells having a cell thickness corresponding to the electro-optical application for at least 100 hours. If the storage stability at a temperature of −20° C. in a corresponding test cell is 1000 h or more, the medium is regarded as stable at this temperature. At temperatures of −30° C. and −40° C., the corresponding times are 500 h and 250 h respectively. At high temperatures, the clearing point is measured in capillaries by conventional methods.


In a preferred embodiment, the liquid-crystal media according to the invention are characterised by optical anisotropy values in the moderate to low range. The birefringence values are preferably in the range from 0.075 or more to 0.130 or less, particularly preferably in the range from 0.085 or more to 0.120 or less and very particularly preferably in the range from 0.090 or more to 0.115 or less.


In this embodiment, the liquid-crystal media according to the invention have a positive dielectric anisotropy and relatively high absolute values of the dielectric anisotropy Ac, which preferably is in the range from 0.5 or more, preferably of 1.0 or more, more preferably of 2.0 or more to 20 or less, more preferably to 15 or less, more preferably from 3.0 or more to 10 or less, particularly preferably from 4.0 or more to 9.0 or less and very particularly preferably from 4.5 or more to 8.0 or less.


The liquid-crystal media according to the invention preferably have relatively low values for the threshold voltage (V0) in the range from 1.0 V or more to 2.7 V or less, preferably from 1.2 V or more to 2.5 V or less, particularly preferably from 1.3 V or more to 2.2 V or less.


In a further preferred embodiment, the liquid-crystal media according to the invention preferably have relatively high values of the average dielectric constant (εav.≡(ε+2ε)/3) which are preferably in the range from 4.0 or more to 25.0 or less, preferably from5.0 or more to 20.0 or less, still more preferably from 6.0 or more to 19.0 or less, particularly preferably from 10.0 or more to 18.0 or less and very particularly preferably from 9.0 or more to 16.5 or less.


In addition, the liquid-crystal media according to the invention have high values for the VHR in liquid-crystal cells.


In freshly filled cells at 20° C. in the cells, these values of the VHR are greater than or equal to 95%, preferably greater than or equal to 97%, particularly preferably greater than or equal to 98% and very particularly preferably greater than or equal to 99%, and after 5 minutes in the oven at 100° C. in the cells, these are greater than or equal to 90%, preferably greater than or equal to 93%, particularly preferably greater than or equal to 96% and very particularly preferably greater than or equal to 98%.


In general, liquid-crystal media having a low addressing voltage or threshold voltage here have a lower VHR than those having a higher addressing voltage or threshold voltage, and vice versa. These preferred values for the individual physical properties are preferably also in each case maintained by the media according to the invention in combination with one another.


In the present application, the term “compounds”, also written as “compound(s)”, means both one and also a plurality of compounds, unless explicitly indicated otherwise.


In a preferred embodiment, the liquid-crystalline media according to the invention comprise:


one or more compounds of formula B and


one or more compounds of formula S and


one or more compounds of formula S0 and/or


one or more compounds of formula I and/or


one or more compounds of formula II, preferably of the formulae PUQU-n-F, CDUQU-n-F, APUQU-n-F and PGUQU-n-F, and/or


one or more compounds of formula III, preferably of the formulae CCP-n-OT, CLP-n-T, CGG-n-F, and CGG-n-OD, and/or


one or more compounds of formula IV, preferably of the formulae CC-n-V, CC-n-Vm, CC-n-m, and CC-V-V and/or


one or more compounds of formula V, preferably of the formulae CCP-n-m, CCP-V-n, CCP-V2-n, CLP-V-n, CCVC-n-V, and CGP-n-m and/or


one or more compounds of formula VI, preferably of the formulae


Y-n-Om, Y-nO-Om and/or CY-n-Om, selected from the group of the compounds of the formulae Y-3-O1, Y-40-O4, CY-3-O2, CY-3-O4, CY-5-O2 and CY-5-O4, and/or


optionally, preferably obligatorily, one or more compounds of formula VII-1, preferably selected from the group of the compounds of the formulae CCY-n-m and CCY-n-Om, preferably of formula CCY-n-Om, preferably selected from the group of the compounds of the formulae CCY-3-O2, CCY-2-O2, CCY-3-O1, CCY-3-O3, CCY-4-O2, CCY-3-O2 and CCY-5-O2, and/or


optionally, preferably obligatorily, one or more compounds of formula VII-2, preferably of formula CLY-n-Om, preferably selected from the group of the compounds of the formulae CLY-2-O4, CLY-3-O2, CLY-3-O3, and/or


one or more compounds of formula VIII, preferably of the formulae CZY-n-On and CCOY-n-m and/or


one or more compounds of formula IX, preferably of the formula PYP-n-m and/or


optionally, preferably obligatorily, one or more compounds of formula IV, preferably selected from the group of the compounds of the formulae CC-n-V, CC-n-Vm and CC-nV-Vm, preferably CC-3-V, CC-3-V1, CC-4-V, CC-S-V and CC-V-V, particularly preferably selected from the group of the compounds CC-3-V, CC-3-V1, CC-4-V and CC-V-V, very particularly preferably the compound CC-3-V, and optionally additionally the compound(s) CC-4-V and/or CC-3-V1 and/or CC-V-V, and/or


optionally, preferably obligatorily, one or more compounds of formula V, preferably of the formulae CCP-V-1 and/or CCP-V2-1.


In a specific preferred embodiment of the present invention, the media according to the invention comprise one or more compounds of formula IX,


The compounds of formula IX, are also highly suitable as stabilisers in liquid-crystal mixtures, especially in case p=q=1 and ring A9=1,4-phenylene. In particular, they stabilise the VHR of the mixtures against UV exposure.


In a preferred embodiment the media according to the invention comprise one or more compounds of formula IX selected from one or more formulae of the group of the compounds of the formulae IX-1 to IX-4, very particularly preferably of the formulae IX-1 to IX-3,




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in which the parameters have the meanings given under formula IX. In a further preferred embodiment, the medium comprises one or more compounds of formula IX-3, preferably of formula IX-3-a,




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in which

    • alkyl and alkyl′, independently of one another, denote alkyl having 1 to 7 C atoms, preferably having 2 to 5 C atoms.


In case the compounds of formula IX are used in the liquid crystalline media according to the present application, they are preferably present in a concentration of 20% or less, more preferably of 10% or less and, most preferably, of 5% or less and for the individual i.e. (homologous) compounds preferably in a concentration of 10% or less and, more preferably, of 5% or less.


For the present invention, the following definitions apply in connection with the specification of the constituents of the compositions (but these definitions are not for the interpretation of these terms in the claims), unless indicated otherwise in individual cases:

    • “comprise”: the concentration of the constituents in question in the composition is preferably 5% or more, particularly preferably 10% or more, very particularly preferably 20% or more,
    • “predominantly consist of”: the concentration of the constituents in question in the composition is preferably 50% or more, particularly preferably 55% or more and very particularly preferably 60% or more,
    • “essentially consist of”: the concentration of the constituents in question in the composition is preferably 80% or more, particularly preferably 90% or more and very particularly preferably 95% or more, and
    • “virtually completely consist of”: the concentration of the constituents in question in the composition is preferably 98% or more, particularly preferably 99% or more and very particularly preferably 100.0%.


This applies both to the media as compositions with their constituents, which can be components and compounds, and also to the components with their constituents, the compounds. Only in relation to the concentration of an individual compound relative to the medium as a whole does the term comprise mean: the concentration of the compound in question is preferably 1% or more, particularly preferably 2% or more, very particularly preferably 4% or more.


For the present invention, “≤” means less than or equal to, preferably less than, and “≥” means greater than or equal to, preferably greater than.


For the present invention,




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denote trans-1,4-cyclohexylene,




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denotes 1,4-cyclohexylene, preferably trans-1,4-cyclohexylene, and




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denote 1,4-phenylene.


For the present invention, the expression “dielectrically positive compounds” means compounds having a Δε of >1.5, the expression “dielectrically neutral compounds” means those where −1.5≤Δε≤1.5 and the expression “dielectrically negative compounds” means those where Δε<−1.5. The dielectric anisotropy of the compounds is determined here by dissolving 10% of the compounds in a liquid-crystalline host and determining the capacitance of the resultant mixture in each case in at least one test cell having a cell thickness of 20 μm with homeotropic and with homogeneous surface alignment at 1 kHz. The measurement voltage is typically 0.5 V to 1.0 V, but is always lower than the capacitive threshold of the respective liquid-crystal mixture investigated.


The host mixture used for dielectrically positive and dielectrically neutral compounds is ZLI-4792 and that used for dielectrically negative compounds is ZLI-2857, both from Merck KGaA, Germany. The values for the respective compounds to be investigated are obtained from the change in the dielectric constant of the host mixture after addition of the compound to be investigated and extrapolation to 100% of the compound employed. The compound to be investigated is dissolved in the host mixture in an amount of 10%. If the solubility of the substance is too low for this purpose, the concentration is halved in steps until the investigation can be carried out at the desired temperature.


The liquid-crystal media according to the invention may, if necessary, also comprise further additives, such as, for example, stabilisers and/or pleochroitic, e.g. dichroitic, dyes and/or chiral dopants in the usual amounts. The amount of these additives employed is preferably in total 0% or more to 10% or less, based on the amount of the entire mixture, particularly preferably 0.1% or more to 6% or less. The concentration of the individual compounds employed is preferably 0.1% or more to 3% or less. The concentration of these and similar additives is generally not taken into account when specifying the concentrations and concentration ranges of the liquid-crystal compounds in the liquid-crystal media.


In a preferred embodiment, the liquid-crystal media according to the invention comprise a polymer precursor which comprises one or more reactive compounds, preferably reactive mesogens, and, if necessary, also further additives, such as, for example, polymerisation initiators and/or polymerisation moderators, in the usual amounts. The amount of these additives employed is in total 0% or more to 10% or less, based on the amount of the entire mixture, preferably 0.1% or more to 2% or less. The concentration of these and similar additives is not taken into account when specifying the concentrations and concentration ranges of the liquid-crystal compounds in the liquid-crystal media.


The compositions consist of a plurality of compounds, preferably 3 or more to 30 or fewer, particularly preferably 6 or more to 20 or fewer and very particularly preferably 10 or more to 16 or fewer compounds, which are mixed in a conventional manner. In general, the desired amount of the components used in lesser amount is dissolved in the components making up the principal constituent of the mixture. This is advantageously carried out at elevated temperature. If the selected temperature is above the clearing point of the principal constituent, completion of the dissolution operation is particularly easy to observe. However, it is also possible to prepare the liquid-crystal mixtures in other conventional ways, for example using pre-mixes or from a so-called “multi-bottle system”.


The mixtures according to the invention exhibit very broad nematic phase ranges having clearing points of 65° C. or more, very favourable values for the capacitive threshold, relatively high values for the voltage holding ratio (VHR) and at the same time very good low-temperature stabilities at −30° C. and −40° C. Furthermore, the mixtures according to the invention are distinguished by low rotational viscosities γi.


It goes without saying to the person skilled in the art that the media according to the invention for use in VA, IPS, FFS or PALC displays may also comprise compounds in which, for example, H, N, O, Cl, F have been replaced by the corresponding isotopes.


The structure of the liquid-crystal displays according to the invention corresponds to the usual geometry, as described, for example, in EP-A 0 240 379.


The liquid-crystal phases according to the invention can be modified by means of suitable additives in such a way that they can be employed in any type of, for example, IPS and FFS LCD display that has been disclosed to date.


Table E below indicates possible dopants which can be added to the mixtures according to the invention. If the mixtures comprise one or more dopants, it is (they are) employed in amounts of 0.01% to 4%, preferably 0.1% to 1.0%.


Stabilisers which can be added, for example, to the mixtures according to the invention, preferably in amounts of 0.01% to 6%, in particular 0.1% to 3%, are shown below in Table F.


For the purposes of the present invention, all concentrations are, unless explicitly noted otherwise, indicated in per cent by weight and relate to the corresponding mixture as a whole or to the respective mixture component, again as a whole, unless explicitly indicated otherwise. In this context the term “the mixture” describes the liquid crystalline medium.


All temperature values indicated in the present application, such as, for example, the melting point T(C,N), the smectic (S) to nematic (N) phase transition T(S,N) and the clearing point T(N,I), are indicated in degrees Celsius (° C.) and all temperature differences are correspondingly indicated in differential degrees (° or degrees), unless explicitly indicated otherwise.


For the present invention, the term “threshold voltage” relates to the capacitive threshold (V0), also known as the Freedericks threshold, unless explicitly indicated otherwise.


All physical properties are and have been determined in accordance with “Merck Liquid Crystals, Physical Properties of Liquid Crystals”, status November 1997, Merck KGaA, Germany, and apply for a temperature of 20° C., and Δn is determined at 436 nm, 589 nm and at 633 nm, and Δε at 1 kHz, unless explicitly indicated otherwise in each case.


The electro-optical properties, for example the threshold voltage (V0) (capacitive measurement), are, as is the switching behaviour, determined in test cells produced at Merck Japan. The measurement cells have soda-lime glass substrates and are constructed in an ECB or VA configuration with polyimide alignment layers (SE-1211 with diluent **26 (mixing ratio 1:1), both from Nissan Chemicals, Japan), which have been rubbed perpendicularly to one another and effect homeotropic alignment of the liquid crystals. The surface area of the transparent, virtually square ITO electrodes is 1 cm2.


Unless indicated otherwise, a chiral dopant is not added to the liquid-crystal mixtures used, but the latter are also particularly suitable for applications in which doping of this type is necessary.


The rotational viscosity is determined using the rotating permanent magnet method and the flow viscosity in a modified Ubbelohde viscometer. For liquid-crystal mixtures ZLI-2293, ZLI-4792 and MLC-6608, all products from Merck KGaA, Darmstadt, Germany, the rotational viscosity values determined at 20° C. are 161 mPa·s, 133 mPa·s and 186 mPa·s respectively, and the flow viscosity values (v) are 21 mm2·s−1, 14 mm2·s−1 and 27 mm2·s−1, respectively.


The dispersion of the refractive index of the materials may for practical purposes be conveniently characterized in the following way, which is used throughout this application unless explicitly stated otherwise. The values of the birefringence are determined at a temperature of 20° C. at several fixed wavelengths using a modified Abbé refractometer with homeotropically aligning surfaces on the sides of the prisms in contact with the material. The birefringence values are determined at the specific wavelength values of 436 nm (respective selected spectral line of a low pressure mercury lamp), 589 nm (sodium “D” line) and 633 nm (wavelength of a HE-Ne laser (used in combination with an attenuator/diffusor in order to prevent damage to the eyes of the observers. In the following table Δn is given at 589 nm and Δ(Δn) is given as Δ(Δn)=Δn(436 nm)−Δn(633 nm).


The following symbols are used, unless explicitly indicated otherwise:

    • V0 threshold voltage, capacitive [V] at 20° C.,
    • ne extraordinary refractive index measured at 20° C. and 589 nm,
    • no ordinary refractive index measured at 20° C. and 589 nm,
    • Δn optical anisotropy measured at 20° C. and 589 nm,
    • λ wavelength λ [nm],
    • Δn(λ) optical anisotropy measured at 20° C. and wavelength λ,
    • Δ(Δn) change in optical anisotropy defined as: Δn(20° C., 436 nm)-Δn(20° C., 633 nm),
    • Δ(Δn*) “relative change in optical anisotropy” defined as: Δ(Δn)/Δn(20° C.,589 nm),
    • ε dielectric susceptibility perpendicular to the director at 20° C. and 1 kHz,
    • ε dielectric susceptibility parallel to the director at 20° C. and 1 kHz,
    • Δε dielectric anisotropy at 20° C. and 1 kHz,
    • T(N,I) or cl.p.clearing point [° C.],
    • v flow viscosity measured at 20° C. [mm2·s−1],
    • γ1 rotational viscosity measured at 20° C. [mPa·s],
    • k11 elastic constant, “splay” deformation at 20° C. [pN],
    • k22 elastic constant, “twist” deformation at 20° C. [pN],
    • k33 elastic constant, “bend” deformation at 20° C. [pN],
    • LTS low-temperature stability of the phase, determined in test cells,
    • VHR voltage holding ratio,
    • ΔVHR decrease in the voltage holding ratio, and
    • Srel relative stability of the VHR,


The following examples explain the present invention without limiting it. However, they show the person skilled in the art preferred mixture concepts with compounds preferably to be employed and the respective concentrations thereof and combinations thereof with one another. In addition, the examples illustrate the properties and property combinations that are accessible.


For the present invention and in the following examples, the structures of the liquid-crystal compounds are indicated by means of acronyms, with the transformation into chemical formulae taking place in accordance with Tables A to C below. All radicals CnH2n+1, CmH2m+1 and ClH2l+1 or CnH2n, CmH2m and ClH2l are straight-chain alkyl radicals or alkylene radicals, in each case having n, m and l C atoms respectively. Preferably n, m and I are independently of each other 1, 2, 3, 4, 5, 6, or 7. Table A shows the codes for the ring elements of the nuclei of the compound, Table B lists the bridging units, and Table C lists the meanings of the symbols for the left- and right-hand end groups of the molecules. The acronyms are composed of the codes for the ring elements with optional linking groups, followed by a first hyphen and the codes for the left-hand end group, and a second hyphen and the codes for the right-hand end group. Table D shows illustrative structures of compounds together with their respective abbreviations.









TABLE A





Ring elements


















C


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D


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DI


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A


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AI


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P


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G


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GI


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U


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UI


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Y


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P(F, Cl)Y


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P(Cl,F)Y


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np


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n3f


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nN3fI


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th


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thI


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tH2F


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tH2fI


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o2f


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o2fI


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dh


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B


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B(S)


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K


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KI


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L


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LI


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F


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FI


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TABLE B





Bridging units




















E
—CH2—CH2





V
—CH═CH—



T
—C≡C—



W
—CF2—CF2



B
—CF═CF—



Z
—CO—O—
ZI
—O—CO—



X
—CF═CH—
XI
—CH═CF—



O
—CH2—O—
OI
—O—CH2



Q
—CF2—O—
QI
—O—CF2

















TABLE C





End groups
















On the left individually or in combination
On the right individually or in combination













-n-
CnH2n+1
-n
—CnH2n+1


-nO-
CnH2n+1—O—
-nO
—O—CnH2n+1


-V-
CH2═CH—
-V
—CH═CH2


-nV-
CnH2n+1—CH═CH—
-nV
—CnH2n—CH═CH2


-Vn-
CH2═CH—CnH2n
-Vn
—CH═CH—CnH2n+1


-nVm-
CnH2n+1—CH═CH—CmH2m
-nVm
—CnH2n—CH═CH—CmH2m+1


-N-
N≡C—
-N
—C≡N


-S-
S═C═N—
-S
—N═C═S


-F-
F—
-F
—F


-CL-
Cl—
-CL
—Cl


-M-
CFH2
-M
—CFH2


-D-
CF2H—
-D
—CF2H


-T-
CF3
-T
—CF3


-MO-
CFH2O—
-OM
—OCFH2


-DO-
CF2HO—
-OD
—OCF2H


-TO-
CF3O—
-OT
—OCF3


-A-
H—C≡C—
-A
—C≡C—H


-nA-
CnH2n+1—C≡C—
-An
—C≡C—CnH2n+1


-NA-
N≡C—C≡C—
-AN
—C≡C—C≡N











On the left only in combination
On the right only in combination













- . . . n . . . -
—CnH2n
- . . . n . . .
—CnH2n


- . . . M . . . -
—CFH—
- . . . M . . .
—CFH—


- . . . D . . . -
—CF2
- . . . D . . .
—CF2


- . . . V . . . -
—CH═CH—
- . . . V . . .
—CH═CH—


- . . . Z . . . -
—CO—O—
- . . . Z . . .
—CO—O—


- . . . ZI . . . -
—O—CO—
- . . . ZI . . .
—O—CO—


- . . . K . . . -
—CO—
- . . . K . . .
—CO—


- . . . W . . . -
—CF═CF—
- . . . W . . .
—CF═CF—





in which n and m are each integers, and the three dots “. . .” are placeholders for other abbreviations from this table.






Besides the compounds of formula I, the mixtures according to the invention preferably comprise one or more compounds of the compounds mentioned below.


The following abbreviations are used:


(n, m and l are, independently of one another, each an integer, preferably 1 to 6, l possibly also 0 and preferably 0 or 2)









TABLE D







Exemplary, preferred compounds of formula I haying a high ϵ:




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B(S)-n-Om







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B(S)-nO-Om







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B(S)-n-F







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B(S)-nO-F







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B(S)-n-T







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B(S)-nO-T







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B(S)-n-OT







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B(S)-nO-OT





as well as







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YG-n-F







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YG-nO-F







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YG-nO-OD







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YG-n-OD







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YG-n-T







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YG-nO-T







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YG-n-OT







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YG-nO-OT







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CK-n-F





and also







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B-n-m







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B-n-Om







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B-nO-Om







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B-n-F







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B-nO-F







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B-n-T







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B-nO-T







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B-n-OT







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B-nO-OT





Exemplary, preferred dielectrically positive compounds




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CP-n-F







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CP-n-CL







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GP-n-F







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GP-n-CL







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CLP-n-T







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CLP-n-OT







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CCP-n-OT







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CCG-n-OT







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CCG-n-F







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CCG-V-F







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CCG-nV-F







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CCU-n-F







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CCEP-n-F







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CCEG-n-F







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CCEU-n-F







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CDU-n-F







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CPG-n-F







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CPU-n-F







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CPU-n-OXF







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CGG-n-F







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CGG-n-OD







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CGU-n-F







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PGU-n-F







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GGP-n-F







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GGP-n-CL







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PGIGI-n-F







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PGIGI-n-CL







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CCPU-n-F







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CCGU-n-F







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CPGU-n-F







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CPGU-n-OT







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PPGU-n-F







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DPGU-n-F







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CCZU-n-F







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PUZU-n-F







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CCOC-n-m







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CCQG-n-F







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CCQU-n-F







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PUQU-n-F







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CDUQU-n-F







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CPUQU-n-F







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CGUQU-n-F







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PGUQU-n-F







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APUQU-n-F







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DPUQU-n-F







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DGUQU-n-F







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CPU-n-F







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DAUQU-n-F







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CLUQU-n-F







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ALUQU-n-F







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DLUQU-n-F







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LGPQU-n-F





Exemplary, preferred dielectrically neutral compounds




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CC-n-m







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CC-n-Om







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CC-n-V







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CC-n-Vm







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CC-n-mV







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CC-n-mVI







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CC-V-V







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CC-V-mV







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CC-V-Vm







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CC-Vn-mV







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CC-nV-mV







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CC-nV-Vm







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CC-n-VV







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CC-n-VVm







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CVC-n-V







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CVC-n-Vm







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CP-n-m







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CP-n-Om







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PP-n-m







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PP-n-Om







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PP-n-mV







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PP-n-mVI







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CCP-n-m







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CCP-n-Om







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CCP-V-m







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CCP-nV-m







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CCP-Vn-m







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CCP-nVm-I







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CLP-V-n







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CPP-n-m







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CPG-n-F







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CGP-n-m







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PGP-n-m







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PGP-n-mV







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PGP-n-mVI







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CCVC-n-V







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CCZPC-n-m







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CPPC-n-m







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CGPC-n-m







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CPGP-n-m





Exemplary, preferred dielectrically negative compounds




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CY-n-Om







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CY-V-n







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CY-V-On







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CY-nV-m







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CY-nV-Om







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CY-Vn-m







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CY-Vn-Om







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CY-nVm-I







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CY-nVm-OI







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PY-V-n







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PY-V-On







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PY-nV-m







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PY-nV-Om







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PY-Vn-m







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PY-Vn-Om







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PY-nVm-I







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PY-nVm-OI







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CCY-V-n







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CCY-V-On







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CCY-nV-m







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CCY-nV-Om







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CCY-Vn-m







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CCY-Vn-Om







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CCY-nVm-I







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CCY-nVm-OI







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CPY-V-n







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CPY-V-On







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CPY-nV-m







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CPY-nV-Om







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CPY-Vn-m







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CPY-Vn-Om







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CPY-nVm-I







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CPY-nVm-OI







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CY-n-m







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CY-n-Om







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CVY-n-m







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CVY-V-n







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CZY-n-Om







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COY-n-m







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COY-n-Om







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Y-n-m







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Y-n-Om







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Y-nO-Om







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PY-n-m







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PY-n-Om







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CCY-n-m







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CCY-n-Om







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CCY-n-mOI







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CCZY-n-Om







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CCOY-n-m







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CCOY-n-Om







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CPY-n-m







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CPY-n-Om







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PYP-n-m







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CP(F,Cl)-n-Om







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CLY-n-m







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CLY-n-Om









Table E shows chiral dopants which are preferably employed in the mixtures according to the invention.









TABLE E









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C15







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CB 15







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CM 21







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R S-811/S-811







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CM 44







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CM 45







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CM 47







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CN







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R-1011/S-1011







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R-2011/S-2011







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R-3011/S-3011







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R-4011/S-4011







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R-5011/S-5011









n a preferred embodiment of the present invention, the media according to the invention comprise one or more compounds selected from the group of the compounds from Table E.


Table F shows stabilisers which can preferably be employed in the mixtures according to the invention in addition to the compounds of formula I. The parameter n here denotes an integer in the range from 1 to 12. In particular, the phenol derivatives shown can be employed as additional stabilisers since they act as antioxidants.









TABLE F









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In a preferred embodiment of the present invention, the media according to the invention comprise one or more compounds selected from the group of the compounds from Table F, in particular one or more compounds selected from the group of the compounds of the following two formulae




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EXAMPLES

The following examples explain the present invention without restricting it in any way. However, the physical properties make it clear to the person skilled in the art what properties can be achieved and in what ranges they can be modified. In particular, the combination of the various properties which can preferably be achieved is thus well defined for the person skilled in the art.


Synthesis Examples

Exemplary compounds of formula B (having a high dielectric constant perpendicular to the director (ε)) are synthesized.


Synthesis Example B1
Synthesis of 4,6-Difluoro-3-(4-propyl-cyclohex-1-enyl)-7-trifluoromethoxy-dibenzofuran



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Step 1.1: 3,2′,3′-Trifluoro-4-trifluoromethoxy-biphenyl-2-ol



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A mixture of 6-bromo-2-fluoro-3-trifluoromethoxyphenol (2) (100 g, 0.36 mol), potassium carbonate (75 g, 0.54 mol), tris(dibenzylideneacetone)-dipalladium(0) (1.6 g, 1.7 mmol) and CataCXium A (2.0 g, 5.3 mmol) in THF (500 mL) and distilled water (250 mL) is heated to reflux under nitrogen atmosphere, followed by dropwise addition of a solution of 2,3-difluoro-4-phenylboronic acid (1) (63 g, 0.38 mol) in THF (250 mL). The reaction mixture is heated at reflux temperature overnight. Then it is cooled to room temperature and diluted with MTB ether and distilled water. Throughout this application, unless explicitly stated otherwise, room temperature and ambient temperature are used synonymously and signify a temperature of about 20° C., typically (20±1)° C. The aqueous phase is separated and extracted with MTB ether. The combined organic phases are washed with distilled water and brine, dried (sodium sulphate) and concentrated in vacuo. The residue is purified by silica gel chromatography (solvent dichloromethane followed by 1-chlorobutane). 3,2′,3′-Trifluoro-4-trifluoromethoxy-biphenyl-2-ol (3) is isolated as a brown solid.


Step 1.2: 4,6-Difluoro-3-trifluoromethoxy-dibenzofuran



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A mixture of 3,2′,3′-trifluoro-4-trifluoromethoxy-biphenyl-2-ol (3) (11.0 g, 35 mmol) and potassium phosphate monohydrate (10.0 g, 44 mmol) in DMPU (300 mL) is stirred at 110° C. for 16 h. Then it is cooled to room temperature and diluted with MTB ether and distilled water. The aqueous phase is separated and extracted with MTB ether. The combined organic phases are washed with distilled water and brine, dried (sodium sulphate) and concentrated in vacuo. The residue is purified by silica gel chromatography (solvent 1-chlorobutane) to give 4,6-difluoro-3-trifluoromethoxy-dibenzofuran (4) as yellowish crystals.


Step 1.3: 1-(4,6-Difluoro-7-trifluoromethoxy-dibenzofuran-3-yl)-4-propyl-cyclohexanol



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n-Butyllithium (27 mL, 15% in hexane, 43 mmol) is added to a solution of 4,6-difluoro-3-trifluoromethoxy-dibenzofuran (4) (10.3 g, 34 mmol) in THF (100 mL) at −70° C. under nitrogen atmosphere. A solution of 4-propylcyclohexanone (6.0 g, 43 mmol) in THF (100 mL) is added after 1 h, and the reaction mixture is stirred for 2 h at −70° C. Then it is allowed to warm to room temperature and is stirred for additional 72 h. The reaction is quenched with distilled water and hydrochloric acid (2 N) at 0° C. and diluted with MTB ether. The aqueous phase is separated and extracted with MTB ether. The combined organic phases are washed with distilled water and brine, dried (sodium sulphate) and concentrated in vacuo. The residue is purified by silica gel chromatography (solvent 1-chlorobutane) to give 1-(4,6-difluoro-7-trifluoromethoxy-dibenzofuran-3-yl)-4-propyl-cyclohexanol (5) as yellow crystals.


Step 1.4: 4,6-Difluoro-3-(4-propyl-cyclohex-1-enyl)-7-trifluoromethoxy-dibenzofuran



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A mixture of 1-(4,6-difluoro-7-trifluoromethoxy-dibenzofuran-3-yl)-4-propyl-cyclohexanol (5) (7.9 g, 15 mmol) and toluene-4-sulfonic acid monohydrate (300 mg, 1.7 mmol) in toluene (100 mL) is heated in a Dean Stark trap at reflux temperature overnight. Then it is cooled to room temperature and diluted with MTB ether and distilled water. The aqueous phase is separated and extracted with MTB ether. The combined organic phases are washed with distilled water and brine, dried (sodium sulphate) and concentrated in vacuo. The residue is purified by silica gel chromatography (solvent 1-chlorobutane). Subsequent recrystallization of the crude product from methanol/heptane and ethanol results in colorless crystals of 4,6-difluoro-3-(4-propyl-cyclohex-1-enyl)-7-trifluoromethoxy-dibenzofuran (B-2-A). This compounds has the following phase characteristics:

    • K 62° C. SA 121° C. I.


Synthesis Example B2
Synthesis of 4,6-Difluoro-3-(4-propyl-cyclohexyl)-7-trifluoromethoxy-dibenzofuran



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Step 2.1: 4,6-Difluoro-3-(4-propyl-cyclohexyl)-7-trifluoromethoxy-dibenzofuran



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4,6-Difluoro-3-(4-propyl-cyclohex-1-enyl)-7-trifluoromethoxy-dibenzofuran (B-2-A) (2.4 g, 6 mmol) in toluene (30 mL) is reacted with hydrogen in the presence of a catalytic amount of Palladium on activated charcoal for 24 h. The reaction mixture is concentrated in vacuo, and the residue is purified by silica gel chromatography (solvent 1-chlorobutane) to give the trans-isomer of the desired product. 4,6-Difluoro-3-(4-propyl-cyclohexyl)-7-trifluoromethoxy-dibenzofuran (B-1-A) is isolated as colorless crystals after subsequent recrystallization from ethanol and heptane.


This compound has the following phase characteristics:

    • Tg −49° C. K 69° C. SA 86° C. N 98° C. I.


Synthesis Example B3
Synthesis of 4,6-Difluoro-3-(4-propyl-cyclohex-1-enyl)-7-trifluoromethyl-dibenzofuran



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4,6-Difluoro-3-(4-propyl-cyclohex-1-enyl)-7-trifluoromethyl-dibenzofuran (B-2-B) is synthesized in analogy to 4,6-Difluoro-3-(4-propyl-cyclohex-1-enyl)-7-trifluoromethoxy-dibenzofuran (B-2-A), starting from 6-bromo-2-fluoro-3-trifluoromethylphenol and 2,3-difluoro-4-phenylboronic acid (1). Recrystallization of the crude product from heptane gives colorless crystals of 4,6-difluoro-3-(4-propyl-cyclohex-1-enyl)-7-trifluoromethyl-dibenzofuran (B-2-B). This compounds has the following phase characteristics:

    • K 89° C. SA 108° C. I.


Synthesis Example B4
Synthesis of 4,6-Difluoro-3-(4-propyl-cyclohexyl)-7-trifluoromethyl-dibenzofuran



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This compounds is prepared analogously to the compound of synthesis example 2. It has the following phase characteristics:

    • K 116° C. SA (64° C.) N (84.4° C.) I.


Synthesis Example B5
Synthesis of 4,6,7-Trfluoro-3-(4-propyl-cyclohex-1-enyl)dibenzofuran



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This compounds is prepared analogously to the compounds of synthesis examples 1 and 3. It has the following phase characteristics:

    • K 103° C. N (93.0° C.) I.


Synthesis Example B6
Synthesis of 4,6,7-Trifluoro-3-(4-propyl-cyclohexyl)dibenzofuran



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This compounds is prepared analogously to the compounds of synthesis examples 2 and 4. It has the following phase characteristics:

    • K 123° C. N (106.4° C.) I.


Analogously are Prepared Compounds of the Formula B-1




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wherein















No:
RB
XB
Phase Range







B7
CH3
F



B8
C2H5
F



B9 =
n-C3H7
F
K 123° C. N (106.4° C.) I


B6





B10
n-C4H9
F



B11
n-C5H11
F



B12
n-C6H13
F



B13
n-C7H15
F



B14
n-C8H17
F



B15
CH3
CF3



B16
C2H5
CF3



B17 =
n-C3H7
CF3
K 116° C. SA (64° C.) N (84.4° C.) I


B4





B18
n-C4H9
CF3
K 98 ° C. SA (57° C.) N (73.3° C.) I


B19
n-C5H11
CF3
K 100° C. N (85.0° C.) I


B20
n-C6H13
CF3



B21
n-C7H15
CF3



B22
n-C8H17
CF3



B23
CH3
OCF3



B24
C2H5
OCF3



B25 =
n-C3H7
OCF3
Tg −49° C. K 69° C. SA 86° C. N 98° C. I


B2





B26
n-C4H9
OCF3



B27
n-C5H11
OCF3



B28
n-C6H13
OCF3



B29
n-C7H15
OCF3



B30
n-C8H17
OCF3









Analogously are Prepared Compounds of the Formula B-2




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wherein


















No:
RB
XB
Phase Range









B31
CH3
F




B32
C2H5
F




B33 =
n-C3H7
F
K 103° C. N (93. 0° C.) I



B5






B34
n-C4H9
F




B35
n-C5H11
F




B36
n-C6H13
F




B37
n-C7H15
F




B38
n-C8H17
F




B39
CH3
CF3
K 119° C. I



B40
C2H5
CF3
K 69° C. SA 88° C. I



B41 =
n-C3H7
CF3
K 89° C. SA 108° C. I



B3






B42
n-C4H9
CF3
K 82° C. SA 106° C. I



B43
n-C5H11
CF3
K 81° C. S? 107° C. I



B44
n-C6H13
CF3
K 67° C. SA 102° C. I



B45
n-C7H15
CF3




B46
n-C8H17
CF3




B47
CH3
OCF3




B48
C2H5
OCF3




B49 =
n-C3H7
OCF3
K 62° C. SA 121° C. I



B1






B50
n-C4H9
OCF3




B51
n-C5H11
OCF3




B52
n-C6H13
OCF3
K 60° C. SA 115° C. I



B53
n-C7H15
OCF3




B54
n-C8H17
OCF3










Compound Examples

Exemplary compounds having a high dielectric constant perpendicular to the director (ε) and a high average dielectric constant (εav.) are exemplified in the following compound examples.


Compound examples B1.1 to B1.3

Compounds of formula B-1 are e.g.




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This compound (CB-3-OT) has a glass transition temperature (Tg) of −49° C., a melting point of 69° C., an extrapolated clearing point (5% in ZLI-4792) of 102° C., a phase sequence of Tg −49° C. K 69° C. SA 86° C. N 98 C I, a Δε of 1.7 and an εof 10.5.




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Compound Examples B1.4 to B1.6



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This compound (LB-3-OT) has a melting point of 62° C., an extrapolated clearing point (5% in ZLI-4792) of 97° C., a phase sequence of K 62° C. SA 121° C. I, a Δε of 2.5 and an ε of 10.5.




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This compound (LB-3-T) has a melting point of 89° C., a phase sequence of K 89° C. SA 108° C. I, an extrapolated clearing point (10% in ZLI-4792) of 83° C., a Δε of 3.5 and an ε of 12.5.




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Synthesis Example 1



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The following abbreviations are used in the synthetic examples.


DMAP 4-(Dimethylamino)pyridine


MTB ether tertButyl methyl ether


TEA Triethylamine


THF Tetrahydrofuran


Synthesis Example 1 (LB(S)-3-OT)
Synthesis of 4,6-Difluoro-3-(4-propyl-cyclohex-1-enyl)-7-trifluoromethoxy-dibenzothiophene



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Step 1.1: 3,2′,3′-Trifluoro-4′-(4-propyl-cyclohex-1-enyl)-4-trifluoromethoxy-biphenyl-2-ol



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A mixture of 6-bromo-2-fluoro-3-trifluoromethoxyphenol (2, CAS 1805580-01-1) (68.0 g, 0.25 mol), potassium carbonate (50.0 g, 0.36 mol), tris(dibenzylideneacetone)-dipalladium(0) (1.2 g, 1.25 mmol) and CataCXium A (1.4 g, 3.71 mmol) in THF (500 mL) and distilled water (100 mL) is heated to reflux under nitrogen atmosphere, followed by dropwise addition of a solution of 2,3-difluoro-4-(4-propyl-cyclohex-1-enyl)-phenylboronic acid (1, CAS 947607-78-5) (70.6 g, 0.25 mol) in THF (200 mL). The reaction mixture is heated at reflux temperature overnight. Then it is cooled to room temperature and diluted with MTB ether and distilled water. Throughout this application, unless explicitly stated otherwise, room temperature and ambient temperature are used synonymously and signify a temperature of about 20° C., typically (20±1)° C. The aqueous phase is separated and extracted with MTB ether. The combined organic phases are washed with distilled water and brine, dried (sodium sulphate) and concentrated in vacuo. The residue is purified by silica gel chromatography (solvent 1-chlorobutane/heptane 1:1). 3,2′,3′-Trifluoro-4′-(4-propyl-cyclohex-1-enyl)-4-trifluoromethoxy-biphenyl-2-ol (3) is isolated as a brown solid.


Step 1.2: Trifluoromethanesulfonic acid 3,2′,3′-trifluoro-4′-(4-propylcyclohex-1-eny)-4-trifluoromethoxy-biphenyl-2-yl ester



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Trifluoromethanesulfonic anhydride (31 mL, 0.19 mol) is slowly added to a solution of 3,2′,3′-trifluoro-4′-(4-propyl-cyclohex-1-enyl)-4-trifluoromethoxy-biphenyl-2-ol (3) (66 g, 0.15 mol), TEA (32 mL, 0.23 mol) and DMAP (560 mg, 4.58 mmol) in dichloromethane (500 mL) at 5° C. under nitrogen atmosphere. The solution is stirred at room temperature overnight. The reaction mixture is purified by silica gel chromatography (solvent dichlormethane) to give trifluoromethanesulfonic acid 3,2′,3′-trifluoro-4′-(4-propyl-cyclohex-1-enyl)-4-trifluoromethoxy-biphenyl-2-yl ester (4) as a brown oil.


Step 1.3: 4,6-Difluoro-3-(4-propyl-cyclohex-1-enyl)-7-trifluoromethoxy-dibenzothiophene



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This reaction is performed as a one-pot reaction. In the first step, a solution of trifluoromethanesulfonic acid 3,2′,3′-trifluoro-4′-(4-propylcyclohex-1-enyl)-4-trifluoromethoxy-biphenyl-2-yl ester (4) (87 g, 0.15 mol), 3-mercapto-propionic acid 2-ethylhexyl ester (45 mL, 0.19 mol), N-ethyldiisopropylamine (40 mL, 0.24 mol) and toluene (350 mL) is degassed with Argon for 1 h. Tris(dibenzylideneacetone)dipalladium(0) (1.5 g, 1.56 mmol) and (oxydi-2,1-phenylene)bis(diphenylphosphine) (1.6 g, 2.91 mmol) are quickly added to the solution, and the reaction mixture is heated at reflux temperature overnight. Then it is allowed to cool to room temperature. In the second step, a solution of potassium tert-butylate (22 g, 0.20 mol) in THF (200 mL) is added to the reaction mixture containing intermediate (5) in situ. The reaction mixture is heated at reflux temperature overnight, followed by addition of a second portion of a solution of potassium tert-butylate (11 g, 0.1 mol) in THF (100 mL). The reaction mixture is heated again at reflux temperature overnight. Then it is cooled to room temperature, quenched with distilled water and hydrochloric acid (25%) at 0° C. and diluted with MTB ether. The aqueous phase is separated and extracted with MTB ether. The combined organic phases are washed with distilled water and brine, dried (sodium sulphate) and concentrated in vacuo. The residue is purified by silica gel chromatography (solvent heptane) to give 4,6-difluoro-3-(4-propyl-cyclohex-1-enyl)-7-trifluoromethoxy-dibenzothiophene (6) as white crystals.


Compound (6) has the following phase characteristics:

    • K 66° C. SmA 181° C. I.


Synthesis Example 2 (LB(S)-3-T)
Synthesis of 4,6-Difluoro-3-(4-propyl-cyclohex-1-enyl)-7-trifluoromethyl-dibenzothiophene



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Step 1.1: 3,2′,3′-Trifluoro-4-trifluoromethyl-biphenyl-2-ol



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A mixture of 6-bromo-2-fluoro-3-trifluoromethylphenol (2, CAS 1804908-52-8) (100 g, 0.38 mol), potassium carbonate (80 g, 0.58 mol), tris(dibenzylideneacetone)-dipalladium(0) (1.9 g, 2.0 mmol) and CataCXium A (2.2 g, 5.8 mmol) in THF (500 mL) and distilled water (200 mL) is heated to reflux under nitrogen atmosphere, followed by dropwise addition of a solution of 2,3-difluoro-4-phenylboronic acid (1, CAS 121219-16-7) (70 g, 0.43 mol) in THF (300 mL). The reaction mixture is heated at reflux temperature overnight. Then it is cooled to room temperature and diluted with MTB ether and distilled water. Throughout this application, unless explicitly stated otherwise, room temperature and ambient temperature are used synonymously and signify a temperature of about 20° C., typically (20±1)° C. The aqueous phase is separated and extracted with MTB ether. The combined organic phases are washed with distilled water and brine, dried (sodium sulphate) and concentrated in vacuo. The residue is purified by silica gel chromatography (solvent dichloromethane). 3,2′,3′-Trifluoro-4-trifluoromethyl-biphenyl-2-ol (3) is isolated as a brown solid.


Step 1.2: Trifluoromethanesulfonic acid 3,2′,3′-trifluoro-4-trifluoromethyl-biphenyl-2-yl ester



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Trifluoromethanesulfonic anhydride (30.0 mL, 0.18 mol) is slowly added to a solution of 3,2′,3′-trifluoro-4-trifluoromethyl-biphenyl-2-ol (3) (46.8 g, 0.15 mol), TEA (32 mL, 0.23 mol) and DMAP (600 mg, 4.9 mmol) in dichloromethane (300 mL) at 5° C. under nitrogen atmosphere. The solution is stirred at room temperature overnight. The reaction mixture is purified by silica gel chromatography (solvent dichlormethane) to give trifluoromethanesulfonic acid 3,2′,3′-trifluoro-4-trifluoromethyl-biphenyl-2-yl ester (4) as a yellow oil.


Step 1.3: 4,6-Difluoro-3-trifluoromethyl-dibenzothiophene



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This reaction is performed as a one-pot reaction. In the first step, a solution of trifluoromethanesulfonic acid 3,2′,3′-trifluoro-4-trifluoromethyl-biphenyl-2-yl ester (4) (66 g, 0.15 mol) and ethyl 3-mercaptopropionate (24 mL, 0.18 mol) in toluene (500 mL) is heated under nitrogen atmosphere to 80° C. Potassium carbonate (50 g, 0.36 mol), tris(dibenzylideneacetone)dipalladium(0) (7.0 g, 7.3 mmol) and (oxydi-2,1-phenylene)bis(diphenylphosphine) (8.0 g, 14.6 mmol) are quickly added to the solution, and the reaction mixture is heated at reflux temperature overnight. Then it is allowed to cool to room temperature. In the second step, a solution of potassium tent-butylate (18 g, 0.16 mol) in THF (150 mL) is added to the reaction mixture containing intermediate (5) in situ. The reaction mixture is heated at reflux temperature overnight. Then it is cooled to room temperature, quenched with distilled water and hydrochloric acid (25%) at 0° C. and diluted with MTB ether. The aqueous phase is separated and extracted with MTB ether. The combined organic phases are washed with distilled water and brine, dried (sodium sulphate) and concentrated in vacuo. The residue is purified by silica gel chromatography (solvent heptane) to give 4,6-difluoro-3-trifluoromethyl-dibenzothiophene (6) as yellow crystals.


Step 1.4: 1-(4,6-Difluoro-7-trifluoromethyl-dibenzothiophen-3-yl)-4-propyl-cyclohexanol



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Lithiumdiisopropylamide (6 mL, 2 M in cyclohexane/ethylbenzene/THF, 12 mmol) is added to a solution of 4,6-difluoro-3-trifluoromethyl-dibenzothiophene (6) (3.2 g, 10 mmol) in THF (100 mL) at −70° C. under nitrogen atmosphere. A solution of 4-propylcyclohexanone (1.7 g, 12 mmol) in THF (10 mL) is added after 1 h, and the reaction mixture is stirred for 2 h at −70° C. Then it is allowed to warm to room temperature and is stirred overnight. The reaction is quenched with distilled water and hydrochloric acid (25%) at 0° C. and diluted with MTB ether. The aqueous phase is separated and extracted with MTB ether. The combined organic phases are washed with distilled water and brine, dried (sodium sulphate) and concentrated in vacuo. The residue is purified by silica gel chromatography (solvent dichlormethane) to give 1-(4,6-difluoro-7-trifluoromethyl-dibenzothiophen-3-yl)-4-propyl-cyclohexanol (7) as yellow crystals.


Step 1.5: 4,6-Difluoro-3-(4-propyl-cyclohex-1-enyl)-7-trifluoromethyl-dibenzothiophene



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A mixture of 1-(4,6-difluoro-7-trifluoromethyl-dibenzothiophen-3-yl)-4-propyl-cyclohexanol (7) (1.2 g, 2.5 mmol) and toluene-4-sulfonic acid monohydrate (50 mg, 0.3 mmol) in toluene (50 mL) is heated in a Dean Stark trap at reflux temperature overnight. Then it is cooled to room temperature and diluted with MTB ether and distilled water. The aqueous phase is separated and extracted with MTB ether. The combined organic phases are washed with distilled water and brine, dried (sodium sulphate) and concentrated in vacuo. The residue is purified by silica gel chromatography (solvent 1-chlorobutane). Subsequent recrystallization of the crude product from heptane results in colorless crystals of 4,6-difluoro-3-(4-propyl-cyclohex-1-enyl)-7-trifluoromethyl-dibenzothiophene.


Compound (7) has the following phase characteristics:

    • K 121° C. SmA 162° C. I.


Synthesis Example 2



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Synthesis Example 3 (CB(S)-3-T)
Synthesis of 4,6-Difluoro-3-(4-propyl-cyclohexyl)-7-trifluoromethyl-dibenzothiophene



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Step 3.1: 3,2′,3′-Trifluoro-4′-(4-propyl-cyclohexyl)-4-trifluoromethyl-biphenyl-2-ol



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A mixture of 6-bromo-2-fluoro-3-trifluoromethylphenol (2, CAS 1804908-52-8) (7.1 g, 26.9 mmol), potassium carbonate (5.6 g, 40.5 mmol), tris(dibenzylideneacetone)-dipalladium(0) (130 mg, 0.14 mmol) and CataCXium A (150 mg, 0.40 mmol) in THF (50 mL) and distilled water (15 mL) is heated to reflux under nitrogen atmosphere, followed by dropwise addition of a solution of 2,3-difluoro-4-(4-propyl-cyclohexyl)-phenylboronic acid (1, CAS 183438-45-1) (7.8 g, 27.2 mmol) in THF (25 mL). The reaction mixture is heated at reflux temperature overnight. Then it is cooled to room temperature and diluted with MTB ether and distilled water. Throughout this application, unless explicitly stated otherwise, room temperature and ambient temperature are used synonymously and signify a temperature of about 20° C., typically (20±1)° C. The aqueous phase is separated and extracted with MTB ether. The combined organic phases are washed with distilled water and brine, dried (sodium sulphate) and concentrated in vacuo. The residue is purified by silica gel chromatography (solvent 1-chlorobutane/heptane 1:1). 3,2′,3′-Trifluoro-4′-(4-propyl-cyclohexyl)-4-trifluoromethyl-biphenyl-2-ol (3) is isolated as a yellow solid.


Step 3.2: Trifluoromethanesulfonic acid 3,2′,3′-trifluoro-4′-(4-propyl-cyclohexyl)-4-trifluoromethyl-biphenyl-2-yl ester



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Trifluoromethanesulfonic anhydride (2.8 mL, 17.0 mmol) is slowly added to a solution of 3,2′,3′-trifluoro-4′-(4-propyl-cyclohexyl)-4-trifluoromethyl-biphenyl-2-ol (3) (5.5 g, 13.2 mmol), TEA (2.8 mL, 20.2 mmol) and DMAP (50 mg, 0.41 mmol) in dichloromethane (50 mL) at 5° C. under nitrogen atmosphere. The solution is stirred at room temperature overnight. The reaction mixture is purified by silica gel chromatography (solvent dichlormethane) to give trifluoromethanesulfonic acid 3,2′,3′-trifluoro-4′-(4-propyl-cyclohexyl)-4-trifluoromethyl-biphenyl-2-yl ester (4) as a yellow oil.


Step 3.3: 4,6-Difluoro-3-(4-propyl-cyclohexyl)-7-trifluoromethyl-dibenzothiophene



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This reaction is performed as a one-pot reaction. In the first step, a solution of trifluoromethanesulfonic acid 3,2′,3′-trifluoro-4′-(4-propyl-cyclohexyl)-4-trifluoromethyl-biphenyl-2-yl ester (4) (7.3 g, 13.1 mmol) and ethyl 3-mercaptopropionate (2.2 mL, 16.7 mmol) in toluene (70 mL) is quickly heated under nitrogen atmosphere to 80° C. Potassium carbonate (5.0 g, 36.2 mmol), tris(dibenzylideneacetone)dipalladium(0) (0.7 g, 0.73 mmol) and (oxydi-2,1-phenylene)bis(diphenylphosphine) (0.8 g, 1.46 mmol) are quickly added to the solution, and the reaction mixture is heated at reflux temperature overnight. Then it is allowed to cool to room temperature. In the second step, a solution of potassium tert-butylate (1.8 g, 16.0 mmol) in THF (20 mL) is added to the reaction mixture containing intermediate (5) in situ. The reaction mixture is heated at reflux temperature overnight, followed by addition of a second portion of a solution of potassium tert-butylate (1.8 g, 16.0 mmol) in THF (20 mL). The reaction mixture is heated at reflux temperature overnight. Then it is cooled to room temperature, quenched with distilled water and hydrochloric acid (25%) at 0° C. and diluted with MTB ether. The aqueous phase is separated and extracted with MTB ether. The combined organic phases are washed with distilled water and brine, dried (sodium sulphate) and concentrated in vacuo. The residue is purified by silica gel chromatography (solvent heptane) to give 4,6-difluoro-3-(4-propyl-cyclohexyl)-7-trifluoromethyl-dibenzothiophene (6) as yellowish crystals.


Compound (6) has the following phase characteristics:

    • K 150° C. N (139° C.) I


Synthesis Example 3a (CB(S)-3-T)

Alternatively, 4,6-Difluoro-3-(4-propyl-cyclohexyl)-7-trifluoromethyl-dibenzothiophene is obtained by hydrogenation of 4,6-Difluoro-3-(4-propyl-cyclohex-1-enyl)-7-trifluoromethyl-dibenzothiophene:




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Synthesis Example 4 (CB(S)-3-OT)
Synthesis of 4,6-Difluoro-3-(4-propyl-cyclohexyl)-7-trifluoromethoxy-dibenzothiophene



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Step 4.1: 3,2′,3′-Trifluoro-4′-(4-propyl-cyclohexyl)-4-trifluoromethoxy-biphenyl-2-ol



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A mixture of 6-bromo-2-fluoro-3-trifluoromethoxyphenol (2, CAS 1805580-01-1) (33.0 g, 0.12 mol), potassium carbonate (25.0 g, 0.18 mol), tris(dibenzylideneacetone)-dipalladium(0) (600 mg, 0.6 mmol) and CataCXium A (700 mg, 1.9 mmol) in THF (250 mL) and distilled water (75 mL) is heated to reflux under nitrogen atmosphere, followed by dropwise addition of a solution of 2,3-difluoro-4-(4-propyl-cyclohexyl)-phenylboronic acid (1, CAS 183438-45-1) (34.4 g, 0.12 mol) in THF (100 mL). The reaction mixture is heated at reflux temperature overnight. Then it is cooled to room temperature and diluted with MTB ether and distilled water. Throughout this application, unless explicitly stated otherwise, room temperature and ambient temperature are used synonymously and signify a temperature of about 20° C., typically (20±1)° C. The aqueous phase is separated and extracted with MTB ether. The combined organic phases are washed with distilled water and brine, dried (sodium sulphate) and concentrated in vacuo. The residue is purified by silica gel chromatography (solvent 1-chlorobutane/heptane 1:1). 3,2′,3′-Trifluoro-4′-(4-propyl-cyclohexyl)-4-trifluoromethoxy-biphenyl-2-ol (3) is isolated as a yellow solid.


Step 4.2: Trifluoromethanesulfonic acid 3,2′,3′-trifluoro-4′-(4-propyl-cyclohexyl)-4-trifluoromethoxy-biphenyl-2-yl ester



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Trifluoromethanesulfonic anhydride (6.0 mL, 36.4 mmol) is slowly added to a solution of 3,2′,3′-trifluoro-4′-(4-propyl-cyclohexyl)-4-trifluoromethoxy-biphenyl-2-ol (3) (12.6 g, 29.0 mmol), TEA (6.3 mL, 45.4 mmol) and DMAP (110 mg, 0.9 mmol) in dichloromethane (100 mL) at 5° C. under nitrogen atmosphere. The solution is stirred at room temperature overnight. The reaction mixture is purified by silica gel chromatography (solvent dichlormethane) to give trifluoromethanesulfonic acid 3,2′,3′-trifluoro-4′-(4-propyl-cyclohexyl)-4-trifluoromethoxy-biphenyl-2-yl ester (4) as a yellow oil.


Step 4.3: 4,6-Difluoro-3-(4-propyl-cyclohexyl)-7-trifluoromethoxy-dibenzothiophene



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This reaction is performed as a one-pot reaction. In the first step, a solution of trifluoromethanesulfonic acid 3,2′,3′-trifluoro-4′-(4-propyl-cyclohexyl)-4-trifluoromethoxy-biphenyl-2-yl ester (4) (16.3 g, 28.1 mmol) and ethyl 3-mercaptopropionate (5.0 mL, 37.9 mmol) in toluene (150 mL) is quickly heated under nitrogen atmosphere to 80° C.


Potassium carbonate (10 g, 72.4 mmol), tris(dibenzylidene-acetone)dipalladium(0) (1.4 g, 1.5 mmol) and (oxydi-2,1-phenylene)bis(diphenylphosphine) (1.6 g, 2.9 mmol) are quickly added to the solution, and the reaction mixture is heated at reflux temperature overnight. Then it is allowed to cool to room temperature. In the second step, a solution of potassium tert-butylate (3.5 g, 31.2 mmol) in THF (50 mL) is added to the reaction mixture containing intermediate (5) in situ. The reaction mixture is heated at reflux temperature overnight, followed by addition of a second portion of a solution of potassium tert-butylate (3.5 g, 31.2 mmol) in THF (50 mL). The reaction mixture is heated at reflux temperature overnight. Then it is cooled to room temperature, quenched with distilled water and hydrochloric acid (25%) at 0° C. and diluted with MTB ether. The aqueous phase is separated and extracted with MTB ether. The combined organic phases are washed with distilled water and brine, dried (sodium sulphate) and concentrated in vacuo. The residue is purified by silica gel chromatography (solvent heptane) to give 4,6-difluoro-3-(4-propyl-cyclohexyl)-7-trifluoromethoxy-dibenzothiophene (6) as colorless crystals.


Compound (6) has the following phase characteristics:

    • K 108° C. SmA 141° C. N 169° C. I


Synthesis Example 4a (CB(S)-3-OT)

Alternatively, 4,6-Difluoro-3-(4-propyl-cyclohexyl)-7-trifluoromethoxy-dibenzothiophene is obtained by hydrogenation of 4,6-Difluoro-3-(4-propyl-cyclohex-1-enyl)-7-trifluoromethoxy-dibenzothiophene:




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Compound Examples

Exemplary compounds having a high dielectric constant perpendicular to the director KO and a high average dielectric constant (εav.) are exemplified in the following compound examples.


Compound Examples 1 to 6

Compounds of formula S-1 are e.g.




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This compound (LB(S)-3-F) has a melting point of 133° C., a clearing point of 155.3° C., a phase range of K 133° C. N 155.3° C. I and a Δε of +1.3.




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This compound (LB(S)-3-OT), the compound of synthesis example 2, has a melting point of 66° C., a clearing point of 181° C., a phase range of K 66° C. SA 181° C. I and a Δε of +4.7.




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Compounds of formula S-2 are e.g.


This compound (LB(S)-3-T) has a melting point of 121° C., a clearing point of 162° C., a phase range of 121° C. SA 162° C. I and a Δε of +7.8.




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This compound (CB(S)-3-F) has a melting point of 157° C., a clearing point of 170.3° C., a phase range of K 157° C. N 170.3 I.




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This compound (CB(S)-3-OT), the compound of synthesis example 2, has a melting point of 108° C., a clearing point of 168.5° C., a phase range of K 108° C. SA 141° C. N 168.5° C. I and a Δε of +4.5.




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This compound (CB(S)-3-T) has a melting point of 150° C., a (monotropic) clearing point of 138.8° C., a phase range of K 150° C. N (138.8° C.) I and a Δε of +8.1.


Analogously the following compounds of formula S-1 are prepared




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RS
XS
Phase range
Δε









CH3
F





C2H5
F





C4H9
F





C5H11
F





C6H13
F





C7H15
F










Analogously the following compounds of formula S-2 are prepared




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RS
XS
Phase range
Δε







CH3
F




C2H5
F




C4H9
F




C5H11
F




C6H13
F




C7H15
F




CH2═CH
F




CH2═CH—CH2
F




CH2═CH—[CH2]2
F




CH3—CH2═CH
F




CH3—CH2═CH—[CH2]2
F




CH3
OCF3




C2H5
OCF3




C4H9
OCF3




C5H11
OCF3




C6H13
OCF3




C7H15
OCF3




CH2═CH
OCF3




CH2═CH—CH2
OCF3




CH2═CH—[CH2]2
OCF3




CH3—CH2═CH
OCF3




CH3—CH2═CH—[CH2]2
OCF3




CH3
CF3




C2H5
CF3




C4H9
CF3




C5H11
CF3




C6H13
CF3




C7H15
CF3




CH2═CH
CF3




CH2═CH—CH2
CF3




CH2═CH—[CH2]2
CF3




CH3—CH2═CH
CF3




CH3—CH2═CH—[CH2]2
CF3









Mixture Examples

In the following are exemplary mixtures disclosed.


Example 1

The following mixture (M-1) is prepared and investigated.












Mixture 1








Composition










Compound
Concentration/











No.
Abbreviation
% by weight
Physical properties













1
CC-3-V
37.0
T(N, I) = 103.0° C.


2
CC-3-V1
4.0
ne(20° C., 589 nm) = 1.6117


3
LB-4-T
3.0
Δn(20° C., 589 nm) = 0.1198


4
LB(S)-3-OT
3.0
ε||(20°, 1 kHz) = 7.0


5
CCP-V-1
11.0
ε(20°, 1 kHz) = 3.2


6
CCP-V2-1
3.0
Δε(20°, 1 kHz) = 3.8


7
CLP-V-1
6.0
εav.(20°, 1 kHz) = 4.5


8
CCVC-3-V
5.0
γ1(20° C.) = t.b.d. mPa · s


9
PUQU-3-F
6.0
k11(20° C.) = 17.0 pN


10
PGP-1-2V
5.0
k22(20° C.) = t.b.d. pN


11
PGP-2-2V
7.0
k33(20° C.) = 17.3 pN


12
APUQU-2-F
3.0
V0(20° C.) = 2.24 V


13
DGUQU-4-F
2.0



14
DPGU-4-F
2.0



15
CPGP-5-2
2.5



16
PPGU-3-F
0.5



Σ

100.0






Remark: t.b.d.: to be determined






Example 2

The following mixture (M-2) is prepared and investigated.












Mixture 2








Composition










Compound
Concentration/











No.
Abbreviation
% by weight
Physical properties













1
CC-3-V
45.0
T(N, I) = 75.5° C.


2
CC-3-V1
7.0
ne(20° C., 589 nm) = 1.6037


3
CC-3-2V1
4.5
Δn(20° C., 589 nm) = 0.1163


4
PP-1-2V1
7.5
ε||(20°, 1 kHz) = 6.0


5
LB-4-T
4.0
ε(20°, 1 kHz) = 3.6


6
LB(S)-3-OT
12.0
Δε(20°, 1 kHz) = 2.4


7
CLP-3-T
2.5
εav.(20°, 1 kHz) = 4.4


8
PGP-1-2V
4.5
γ1(20° C.) = 55 mPa · s


9
PGP-2-2V
7.0
k11(20° C.) = 16.0 pN


10
DGUQU-4-F
4.0
k22(20° C.) = t.b.d. pN


11
PGUQU-4-F
2.0
k33(20° C.) = 14.6 pN


Σ

100.0
V0(20° C.) = 2.70 V





Remark: t.b.d.: to be determined






Example 3

The following mixture (M-3) is prepared and investigated.












Mixture 3








Composition










Compound
Concentration/











No.
Abbreviation
% by weight
Physical properties













1
CC-3-V
48.0
T(N, I) = 80.0° C.


2
CC-3-V1
7.0
ne(20° C., 589 nm) = 1.5814


3
CC-3-2V1
5.5
Δn(20° C., 589 nm) = 0.0994


4
PP-1-2V1
2.0
ε||(20°, 1 kHz) = 6.8


5
LB-4-T
6.0
ε(20°, 1 kHz) = 3.9


6
LB(S)-3-OT
14.0
Δε(20°, 1 kHz) = 2.9


7
CLP-V-1
4.0
εav.(20°, 1 kHz) = 4.9


8
CLP-1V-1
3.0
γ1(20° C.) = 58 mPa · s


9
PGP-2-2V
1.5
k11(20° C.) = 15.8 pN


10
DGUQU-4-F
5.0
k22(20° C.) = t.b.d. pN


11
APUQU-2-F
4.0
k33(20° C.) = 15.3 pN


Σ

100.0
V0(20° C.) = 2.45 V





Remark: t.b.d.: to be determined






Example 4

The following mixture (M-4) is prepared and investigated.












Mixture 4








Composition










Compound
Concentration/











No.
Abbreviation
% by weight
Physical properties













1
CC-3-V
49.0
T(N, I) = 79.5° C.


2
CC-3-V1
7.0
ne(20° C., 589 nm) = 1.5818


3
CC-3-2V1
5.5
Δn(20° C., 589 nm) = 0.0990


4
PP-1-2V1
2.5
ε||(20°, 1 kHz) = 6.5


5
LB-4-T
3.5
ε(20°, 1 kHz) = 3.6


6
LB(S)-3-OT
14.0
Δε(20°, 1 kHz) = 2.8


7
CLP-V-1
4.0
εav.(20°, 1 kHz) = 4.6


8
CLP-1V-1
3.0
γ1(20° C.) = 55 mPa · s


9
PGP-2-2V
3.0
k11(20° C.) = 15.6 pN


10
DGUQU-4-F
5.0
k22(20° C.) = t.b.d. pN


11
APUQU-2-F
3.5
k33(20° C.) = 15.9 pN


Σ

100.0
V0(20° C.) = 2.48 V





Remark: t.b.d.: to be determined






Example 5

The following mixture (M-5) is prepared and investigated.












Mixture 5








Composition










Compound
Concentration/











No.
Abbreviation
% by weight
Physical properties













1
CC-3-V
43.0
T(N, I) = 76.0° C.


2
CC-3-V1
7.0
ne(20° C., 589 nm) = 1.6020


3
CC-3-2V1
5.0
Δn(20° C., 589 nm) = 0.1160


4
PP-1-2V1
7.0
ε||(20°, 1 kHz) = 6.4


5
LB-4-T
8.0
ε(20°, 1 kHz) = 4.0


6
LB(S)-3-OT
13.0
Δε(20°, 1 kHz) = 2.4


7
CLP-3-T
2.5
εav.(20°, 1 kHz) = 4.8


8
PGP-1-2V
2.0
γ1(20° C.) = 57 mPa · s


9
PGP-2-2V
6.5
k11(20° C.) = 16.6 pN


10
DGUQU-4-F
4.0
k22(20° C.) = t.b.d. pN


11
PGUQU-4-F
2.0
k33(20° C.) = 14.5 pN


Σ

100.0
V0(20° C.) = 2.76 V





Remark: t.b.d.: to be determined






Example 6

The following mixture (M-6) is prepared and investigated.












Mixture 6








Composition










Compound
Concentration/











No.
Abbreviation
% by weight
Physical properties













1
CC-3-V
48.0
T(N, I) = 80.5° C.


2
CC-3-V1
7.0
ne(20° C., 589 nm) = 1.5822


3
CC-3-2V1
5.5
Δn(20° C., 589 nm) = 0.1011


4
PP-1-2V1
1.5
ε||(20°, 1 kHz) = 6.6


5
LB-4-T
8.0
ε(20°, 1 kHz) = 4.1


6
LB(S)-3-OT
14.0
Δε(20°, 1 kHz) = 2.6


7
CLP-V-1
4.0
εav.(20°, 1 kHz) = 4.9


8
CLP-1V-1
3.0
γ1(20° C.) = 62 mPa · s


9
PGP-2-2V
1.5
k11(20° C.) = 16.0 pN


10
DGUQU-4-F
5.0
k22(20° C.) = t.b.d. pN


11
APUQU-2-F
2.5
k33(20° C.) = 15.4 pN


Σ

100.0
V0(20° C.) = 2.63 V





Remark: t.b.d.: to be determined






Example 7

The following mixture (M-7) is prepared and investigated.












Mixture 7








Composition










Compound
Concentration/











No.
Abbreviation
% by weight
Physical properties













1
CC-3-V
44.0
T(N, I) = 76.0° C.


2
CC-3-V1
6.0
ne(20° C., 589 nm) = 1.6046


3
CC-3-2V1
5.0
Δn(20° C., 589 nm) = 0.1160


4
PP-1-2V1
7.5
ε||(20°, 1 kHz) = 6.0


5
LB-4-T
4.0
ε(20°, 1 kHz) = 3.6


6
LB(S)-3-OT
12.0
Δε(20°, 1 kHz) = 2.4


7
PGU-3-F
3.0
εav.(20°, 1 kHz) = 4.4


8
CLP-V-1
5.0
γ1(20° C.) = 53 mPa · s


9
PGP-2-2V
9.0
k11(20° C.) = 16.4 pN


10
DGUQU-4-F
4.5
k22(20° C.) = t.b.d. pN


Σ

100.0
k33(20° C.) = 14.6 pN





V0(20° C.) = 2.74 V





Remark: t.b.d.: to be determined






Example 8

The following mixture (M-8) is prepared and investigated.












Mixture 8








Composition










Compound
Concentration/











No.
Abbreviation
% by weight
Physical properties













1
CC-3-V
46.0
T(N, I) = 81.0° C.


2
CC-3-V1
7.0
ne(20° C., 589 nm) = 1.5851


3
CC-3-2V1
5.5
Δn(20° C., 589 nm) = 0.1020


4
PP-1-2V1
2.5
ε||(20°, 1 kHz) = 6.8


5
LB-4-T
6.0
ε(20°, 1 kHz) = 4.0


6
LB(S)-3-OT
8.0
Δε(20°, 1 kHz) = 2.8


7
LB(S)-4-OT
8.0
εav.(20°, 1 kHz) = 4.9


8
CLP-V-1
4.0
γ1(20° C.) = 62 mPa · s


9
CLP-1V-1
4.0
k11(20° C.) = 16.2 pN


10
PGU-3-F
2.5
k22(20° C.) = t.b.d. pN


11
DGUQU-4-F
4.5
k33(20° C.) = 15.3 pN


12
APUQU-2-F
2.0
V0(20° C.) = 2.55 V


Σ

100.0






Remark: t.b.d.: to be determined






Example 9

The following mixture (M-9) is prepared and investigated.












Mixture 9








Composition










Compound
Concentration/











No.
Abbreviation
% by weight
Physical properties













1
CCGU-3-F
4.0
T(N, I) = 111.0° C.


2
CDUQU-3-F
9.0
ne(20° C., 589 nm) = 1.5918


3
CPGP-4-3
1.0
Δn(20° C., 589 nm) = 0.1078


4
DGUQU-4-F
4.5
ε||(20°, 1 kHz) = 8.5


5
CCP-3-OT
4.0
ε(20°, 1 kHz) = 3.6


6
CCP-V-1
13.0
Δε(20°, 1 kHz) = 5.0


7
CCP-V2-1
1.0
εav.(20°, 1 kHz) = 5.2


8
CCVC-3-V
6.0
γ1(20° C.) = 107 mPa · s


9
PGP-1-2V
5.0
k11(20° C.) = 19.7 pN


10
CC-3-2V1
9.0
k22(20° C.) = t.b.d. pN


11
CC-3-V
25.5
k33(20° C.) = 20.1 pN


12
CC-3-V1
5.5
V0(20° C.) = 2.10 V


13
PP-1-2V1
2.5



14
LB(S)-3-OT
5.0



15
LB-4-T
5.0



Σ

100.0






Remark: t.b.d.: to be determined






Example 10

The following mixture (M-10) is prepared and investigated.












Mixture 10








Composition










Compound
Concentration/











No.
Abbreviation
% by weight
Physical properties













1
CC-3-V
43.5
T(N, I) = 75.0° C.


2
CC-3-V1
6.0
ne(20° C., 589 nm) = 1.6065


3
CC-3-2V1
5.0
Δn(20° C., 589 nm) = 0.1180


4
PP-1-2V1
7.5
ε||(20°, 1 kHz) = 6.3


5
LB-4-T
4.0
ε(20°, 1 kHz) = 3.7


6
LB(S)-3-OT
7.0
Δε(20°, 1 kHz) = 2.6


7
LB(S)-4-OT
7.0
εav.(20°, 1 kHz) = 4.6


8
PGU-3-F
3.5
γ1(20° C.) = 55 mPa · s


9
CLP-V-1
2.0
k11(20° C.) = 16.2 pN


10
PGP-2-2V
10.0
k22(20° C.) = t.b.d. pN


11
DGUQU-4-F
4.5
k33(20° C.) = 14.8 pN


Σ

100.0
V0(20° C.) = 2.65 V





Remark: t.b.d.: to be determined






Example 11

The following mixture (M-11) is prepared and investigated.












Mixture 11








Composition










Compound
Concentration/











No.
Abbreviation
% by weight
Physical properties













1
CC-3-V
46.5
T(N, I) = 80.5° C.


2
CC-3-V1
7.0
ne(20° C., 589 nm) = 1.5840


3
CC-3-2V1
6.0
Δn(20° C., 589 nm) = 0.1014


4
PP-1-2V1
2.0
ε||(20°, 1 kHz) = 6.9


5
LB-4-T
6.0
ε(20°, 1 kHz) = 4.0


6
LB(S)-3-OT
8.0
Δε(20°, 1 kHz) = 3.0


7
LB(S)-4-OT
8.0
εav.(20°, 1 kHz) = 5.0


8
CLP-V-1
3.0
γ1(20° C.) = 61 mPa · s


9
CLP-1V-1
4.0
k11(20° C.) = 16.0 pN


10
PGU-3-F
2.5
k22(20° C.) = t.b.d. pN


11
DGUQU-4-F
4.5
k33(20° C.) = 15.2 pN


12
APUQU-2-F
2.5
V0(20° C.) = 2.46 V


Σ

100.0






Remark: t.b.d.: to be determined






Example 12

The following mixture (M-12) is prepared and investigated.












Mixture 12








Composition










Compound
Concentration/











No.
Abbreviation
% by weight
Physical properties













 1
CCGU-3-F
2.2
T(N, I) = 113.0° C.


 2
CDUQU-3-F
9.0
ne(20° C., 589 nm) = 1.5906


 3
CPGP-4-3
1.8
Δn(20° C., 589 nm) = 0.1082


 4
DGUQU-4-F
4.6
ε(20°, 1 kHz) = 8.8


 5
CCP-3-OT
4.0
ε(20°, 1 kHz) = 3.6


 6
CCP-V-1
5.2
Δε(20°, 1 kHz) = 5.1


 7
CCP-V2-1
5.0
εav.(20°, 1 kHz) = 5.3


 8
CCVC-3-V
6.0
γ1(20° C.) = 112 mPa · s


 9
PGP-1-2V
3.2
k11(20° C.) = 21.7 pN


10
CC-3-2V1
9.0
k22(20° C.) = t.b.d. pN


11
CC-3-V
23.0
k33(20° C.) = 21.6 pN


12
CC-3-V1
9.0
V0(20° C.) = 2.17 V


13
PP-1-2V1
2.0



14
LB(S)-3-OT
10.0



15
LB-4-T
3.0



16
CLP-3-T
3.0



Σ

100.0





Remark: t.b.d.: to be determined






Example 13

The following mixture (M-13) is prepared and investigated.












Mixture 13








Composition










Compound
Concentration/











No.
Abbreviation
% by weight
Physical properties













 1
CCGU-3-F
2.2
T(N, I) = 112.0° C.


 2
CDUQU-3-F
9.0
ne(20° C., 589 nm) = 1.5931


 3
CPGP-4-3
1.8
Δn(20° C., 589 nm) = 0.1106


 4
DGUQU-4-F
4.6
ε(20°, 1 kHz) = 8.8


 5
CCP-3-OT
4.0
ε(20°, 1 kHz) = 4.0


 6
CCP-V-1
5.2
Δε(20°, 1 kHz) = 4.8


 7
CCP-V2-1
5.0
εav.(20°, 1 kHz) = 5.6


 8
CCVC-3-V
6.0
γ1(20° C.) = 112 mPa · s


 9
PGP-1-2V
3.2
k11(20° C.) = 21.3 pN


10
CC-3-2V1
9.0
k22(20° C.) = t.b.d. pN


11
CC-3-V
23.0
k33(20° C.) = 21.1 pN


12
CC-3-V1
9.0
V0(20° C.) = 2.22 V


13
PP-1-2V1
2.0



14
LB(S)-3-OT
10.0



15
LB-4-T
3.0



16
LB-3-T
3.0



Σ

100.0





Remark: t.b.d.: to be determined






Example 14

The following mixture (M-14) is prepared and investigated.












Mixture 14








Composition










Compound
Concentration/











No.
Abbreviation
% by weight
Physical properties













 1
CC-3-V
29.5
T(N, I) = 102.5° C.


 2
CC-3-V1
8.0
ne(20° C., 589 nm) = 1.5775


 3
CC-3-2V1
8.5
Δn(20° C., 589 nm) = 0.0960


 4
CCP-V-1
8.0
ε(20°, 1 kHz) = 8.7


 5
CCP-V2-1
4.5
ε(20°, 1 kHz) = 3.5


 6
CCVC-3-V
4.0
Δε(20°, 1 kHz) = 5.2


 7
CCP-3-OT
5.0
εav.(20°, 1 kHz) = 5.2


 8
CLP-V-1
4.0
γ1(20° C.) = 89 mPa · s


 9
CLP-3-T
3.0
k11(20° C.) = 19.2 pN


10
CDUQU-3-F
4.0
k22(20° C.) = t.b.d. pN


11
DGUQU-4-F
2.5
k33(20° C.) = 20.0 pN


12
DGUQU-2-F
4.0
V0(20° C.) = 2.02 V


13
APUQU-3-F
2.5



14
PUQU-3-F
1.5



15
LB(S)-3-OT
9.0



16
LB-4-T
2.0



Σ

100.0





Remark: t.b.d.: to be determined






Example 15

The following mixture (M-15) is prepared and investigated.












Mixture 15








Composition










Compound
Concentration/











No.
Abbreviation
% by weight
Physical properties













 1
CC-3-V
30.5
T(N, I) = 104.0° C.


 2
CC-3-V1
8.0
ne(20° C., 589 nm) = 1.5729


 3
CC-3-2V1
8.5
Δn(20° C., 589 nm) = 0.0918


 4
CCP-V-1
10.0
ε(20°, 1 kHz) = 8.5


 5
CCP-V2-1
4.5
ε(20°, 1 kHz) = 3.2


 6
CCVC-3-V
4.0
Δε(20°, 1 kHz) = 5.2


 7
CCP-3-OT
5.5
εav.(20°, 1 kHz) = 5.0


 8
CLP-V-1
4.0
γ1(20° C.) = 87 mPa · s


 9
CLP-3-T
3.0
k11(20° C.) = 18.7 pN


10
CDUQU-3-F
4.5
k22(20° C.) = t.b.d. pN


11
DGUQU-4-F
4.0
k33(20° C.) = 20.1 pN


12
DGUQU-2-F
2.5
V0(20° C.) = 1.99 V


13
APUQU-3-F
4.0



14
LB(S)-3-OT
5.0



15
LB-4-T
2.0



Σ

100.0





Remark: t.b.d.: to be determined






Example 16

The following mixture (M-16) is prepared and investigated.












Mixture 16








Composition










Compound
Concentration/











No.
Abbreviation
% by weight
Physical properties





 1
CC-3-V
27.0
T(N, I) = 105.5° C.


 2
CC-3-V1
7.5
ne(20° C., 589 nm) = 1.5744


 3
CC-3-2V1
8.5
Δn(20° C., 589 nm) = 0.0917


 4
CCP-V-1
17.0
ε(20°, 1 kHz) = 8.3


 5
CCP-V2-1
6.5
ε(20°, 1 kHz) = 3.2


 6
CCP-3-1
4.5
Δε(20°, 1 kHz) = 5.1


 7
CLP-3-T
4.0
εav.(20°, 1 kHz) = 4.9


 8
CDUQU-3-F
6.5
γ1(20 C.) = 94 mPa · s


 9
DGUQU-4-F
4.0
k11(20° C.) = 18.8 pN


10
APUQU-2-F
2.0
k22(20° C.) = t.b.d. pN


11
APUQU-3-F
2.0
k33(20° C.) = 20.9 pN


12
LB(S)-3-OT
5.0
V0(20° C.) = 2.02 V


13
LB-4-T
1.5



14
CCQU-3-F
4.0



Σ

100.0





Remark: t.b.d.: to be determined






Example 17

The following mixture (M-17) is prepared and investigated.












Mixture 17








Composition










Compound
Concentration/











No.
Abbreviation
% by weight
Physical properties













 1
CC-3-V
29.0
T(N, I) = 106.0° C.


 2
CC-3-V1
7.5
ne(20° C., 589 nm) = 1.5746


 3
CC-3-2V1
8.5
Δn(20° C., 589 nm) = 0.0926


 4
PP-1-2V1
2.0
ε(20°, 1 kHz) = 8.3


 5
CCP-V-1
9.5
ε(20°, 1 kHz) = 3.0


 6
CCP-V2-1
2.5
Δε(20°, 1 kHz) = 5.2


 7
CCVC-3-V
4.0
εav.(20°, 1 kHz) = 4.8


 8
CCP-3-OT
5.0
γ1(20° C.) = 92 mPa · s


 9
CLP-V-1
7.0
k11(20° C.) = 19.4 pN


10
CLP-3-T
4.0
k22(20° C.) = t.b.d. pN


11
CDUQU-3-F
8.0
k33(20° C.) = 20.8 pN


12
DGUQU-2-F
1.5
V0(20° C.) = 2.03 V


13
DGUQU-4-F
4.0



14
CCGU-3-F
3.5



15
LB(S)-3-OT
2.5



16
LB-4-T
1.5



Σ

100.0





Remark: t.b.d.: to be determined






Example 18

The following mixture (M-18) is prepared and investigated.












Mixture 18








Composition










Compound
Concentration/











No.
Abbreviation
% by weight
Physical properties













 1
CC-3-V
28.0
T(N, I) = 104.5° C.


 2
CC-3-V1
7.5
ne(20° C., 589 nm) = 1.5756


 3
CC-3-2V1
8.5
Δn(20° C., 589 nm) = 0.0936


 4
PP-1-2V1
2.0
ε(20°, 1 kHz) = 8.4


 5
CCP-V-1
10.5
ε(20°, 1 kHz) = 3.1


 6
CCP-V2-1
1.5
Δε(20°, 1 kHz) = 5.3


 7
CCVC-3-V
4.5
εav.(20°, 1 kHz) = 4.8


 8
CCP-3-OT
5.0
γ1(20° C.) = 91 mPa · s


 9
CLP-V-1
7.0
k11(20° C.) = 19.5 pN


10
CLP-3-T
5.5
k22(20° C.) = t.b.d. pN


11
CDUQU-3-F
7.0
k33(20° C.) = 20.4 pN


12
DGUQU-2-F
1.5
V0(20° C.) = 2.03 V


13
DGUQU-4-F
4.0



14
CCGU-3-F
2.0



15
LB(S)-3-OT
2.0



16
LB-4-T
2.0



17
PUQU-3-F
1.5



Σ

100.0





Remark: t.b.d.: to be determined






Example 19

The following mixture (M-19) is prepared and investigated.












Mixture 19









Composition











Compound
Concentration/











No.
Abbreviation
% by weight
Physical properties













 1
CC-3-V
29.5
T(N, I) = 103.0° C.


 2
CC-3-V1
8.0
ne(20° C., 589 nm) = 1.5754


 3
CC-3-2V1
8.5
Δn(20° C., 589 nm) = 0.0949


 4
CCP-V-1
8.0
ε(20°, 1 kHz) = 8.6


 5
CCP-V2-1
4.5
ε(20°, 1 kHz) = 3.4


 6
CCVC-3-V
4.0
Δε(20°, 1 kHz) = 5.2


 7
CCP-3-OT
5.0
εav.(20°, 1 kHz) = 5.1


 8
CLP-V-1
5.0
γ1(20° C.) = 88 mPa · s


 9
CLP-3-T
3.0
k11(20° C.) = 19.0 pN


10
CDUQU-3-F
4.0
k22(20° C.) = t.b.d. pN


11
DGUQU-4-F
2.5
k33(20° C.) = 19.4 pN


12
DGUQU-2-F
4.0
V0(20° C.) = 2.02 V


13
APUQU-3-F
2.5



14
PUQU-3-F
1.5



15
LB(S)-3-OT
8.0



16
LB-4-T
2.0



Σ

100.0





Remark: t.b.d.: to be determined






Example 20

The following mixture (M-20) is prepared and investigated.












Mixture 20








Composition










Compound
Concentration/











No.
Abbreviation
% by weight
Physical properties













 1
CC-3-V
30.0
T(N, I) = 102.0° C.


 2
CC-3-V1
7.0
ne(20° C., 589 nm) = 1.5777


 3
CC-3-2V1
8.5
Δn(20° C., 589 nm) = 0.0973


 4
CCP-V-1
5.0
ε(20°, 1 kHz) = 8.6


 5
CCP-V2-1
4.5
ε(20°, 1 kHz) = 3.5


 6
CCVC-3-V
4.0
Δε(20°, 1 kHz) = 5.1


 7
CCP-3-OT
5.0
εav.(20°, 1 kHz) = 5.2


 8
CLP-V-1
4.0
γ1(20° C.) = 90 mPa · s


 9
CLP-3-T
1.0
k11(20° C.) = 18.8 pN


10
CDUQU-3-F
8.0
k22(20° C.) = t.b.d. pN


11
DGUQU-4-F
4.0
k33(20° C.) = 19.5 pN


12
DGUQU-2-F
1.5
V0(20° C.) = 2.02 V


13
CCGU-3-F
4.0



14
PP-1-2V1
3.5



15
LB(S)-3-OT
7.0



16
LB-4-T
3.0



Σ

100.0





Remark: t.b.d.: to be determined






Example 21

The following mixture (M-21) is prepared and investigated.












Mixture 21








Composition










Compound
Concentration/











No.
Abbreviation
% by weight
Physical properties













 1
CC-3-V
29.5
T(N, I) = 102.0° C.


 2
CC-3-V1
8.0
ne(20° C., 589 nm) = 1.5754


 3
CC-3-2V1
8.5
Δn(20° C., 589 nm) = 0.0949


 4
CCP-V-1
8.0
ε(20°, 1 kHz) = 8.6


 5
CCP-V2-1
4.5
ε(20°, 1 kHz) = 3.5


 6
CCVC-3-V
4.0
Δε(20°, 1 kHz) = 5.2


 7
CCP-3-OT
5.0
εav.(20°, 1 kHz) = 5.2


 8
CLP-V-1
5.0
γ1(20° C.) = 89 mPa · s


 9
CLP-3-T
3.0
k11(20° C.) = 19.0 pN


10
CDUQU-3-F
4.0
k22(20° C.) = t.b.d. pN


11
DGUQU-4-F
2.5
k33(20° C.) = 19.2 pN


12
DGUQU-2-F
4.0
V0(20° C.) = 2.02 V


13
APUQU-3-F
2.5



14
PUQU-3-F
1.5



15
LB(S)-3-OT
6.0



16
LB-4-T
4.0



Σ

100.0





Remark: t.b.d.: to be determined






Example 22

The following mixture (M-22) is prepared and investigated.












Mixture 22








Composition










Compound
Concentration/











No.
Abbreviation
% by weight
Physical properties













 1
CC-3-V
30.0
T(N, I) = 108.0° C.


 2
CC-3-V1
7.0
ne(20° C., 589 nm) = t.b.d.


 3
CC-3-2V1
8.5
Δn(20° C., 589 nm) = t.b.d.


 4
CCP-V-1
5.0
ε(20°, 1 kHz) = t.b.d.


 5
CCP-V2-1
4.5
ε(20°, 1 kHz) = t.b.d.


 6
CCVC-3-V
4.0
Δε(20°, 1 kHz) = t.b.d.


 7
CCP-3-OT
5.0
εav.(20°, 1 kHz) = t.b.d.


 8
CLP-V-1
4.0
γ1(20° C.) = t.b.d. mPa · s


 9
CLP-3-T
1.0
k11(20° C.) = t.b.d. pN


10
CDUQU-3-F
8.0
k22(20° C.) = t.b.d. pN


11
DGUQU-4-F
4.0
k33(20° C.) = t.b.d. pN


12
DGUQU-2-F
1.5
V0(20° C.) = t.b.d. V


13
CCGU-3-F
4.0



14
PP-1-2V1
1.5



15
LB(S)-3-OT
7.0



16
LB-4-T
3.0



17
CCG-V-F
2.0



Σ

100.0





Remark: t.b.d.: to be determined






Example 23

The following mixture (M-23) is prepared and investigated.












Mixture 23








Composition










Compound
Concentration/











No.
Abbreviation
% by weight
Physical properties













 1
CC-3-V
15.0
T(N, I) = 103.0° C.


 2
CC-3-O3
7.0
ne(20° C., 589 nm) = t.b.d.


 3
CCG-V-F
8.0
Δn(20° C., 589 nm) = t.b.d.


 4
CCOC-3-3
3.0
ε(20°, 1 kHz) = t.b.d.


 5
CCOC-4-3
3.0
ε(20°, 1 kHz) = t.b.d.


 6
CCP-V-1
11.0
Δε(20°, 1 kHz) = t.b.d.


 7
CCQU-2-F
6.0
εav.(20°, 1 kHz) = t.b.d.


 8
CCQU-3-F
6.0
γ1(20° C.) = t.b.d. mPa · s


 9
CCQU-5-F
6.0
k11(20° C.) = t.b.d. pN


10
CDUQU-3-F
6.0
k22(20° C.) = t.b.d. pN


11
CCP-3-OT
6.0
k33(20° C.) = t.b.d. pN


12
CLP-3-T
7.0
V0(20° C.) = t.b.d. V


13
LB(S)-3-OT
6.0



14
LB-4-T
10.0



Σ

100.0





Remark: t.b.d.: to be determined






Example 32

The following mixture (M-32) is prepared and investigated.












Mixture 32








Composition










Compound
Concentration/











No.
Abbreviation
% by weight
Physical properties













 1
CC-3-V
21.0
T(N, I) = 104.0° C.


 2
CC-3-O3
8.0
ne(20° C., 589 nm) = 1.5716


 3
CCGU-3-F
6.0
Δn(20° C., 589 nm) = 0.0952


 4
CCOC-3-3
3.0
ε(20°, 1 kHz) = 9.8


 5
CC0C-4-3
3.0
ε(20°, 1 kHz) = 4.3


 6
CCP-V-1
10.0
Δε(20°, 1 kHz) = 5.5


 7
CCQU-2-F
6.0
εav.(20°, 1 kHz) = 6.1


 8
CCQU-3-F
6.0
γ1(20° C.) = 133 mPa · s


 9
CCQU-5-F
6.0
k11(20° C.) = 17.9 pN


10
CDUQU-3-F
6.0
k22(20° C.) = t.b.d. pN


11
CCP-3-OT
6.0
k33(20° C.) = 16.9 pN


12
CLP-3-T
3.0
V0(20° C.) = 1.90 V


13
LB(S)-3-OT
6.0



14
LB-4-T
10.0



Σ

100.0





Remark: t.b.d.: to be determined






Example 24

The following mixture (M-24) is prepared and investigated.












Mixture 24








Composition










Compound
Concentration/











No.
Abbreviation
% by weight
Physical properties













 1
CC-3-V
27.5
T(N, I) = 100.5° C.


 2
CC-3-V1
8.0
ne(20° C., 589 nm) = 1.5705


 3
CCOC-3-3
4.0
Δn(20° C., 589 nm) = 0.0933


 4
CCOC-4-3
4.0
ε(20°, 1 kHz) = 9.2


 5
CCP-V-1
7.0
ε(20°, 1 kHz) = 4.1


 6
CCGU-3-F
3.0
Δε(20°, 1 kHz) = 5.1


 7
CCQU-3-F
8.0
εav.(20°, 1 kHz) = 5.8


 8
DGUQU-4-F
2.0
γ1(20° C.) = 110 mPa · s


 9
CDUQU-3-F
6.0
k11(20° C.) = 17.5 pN


10
CCU-3-F
5.0
k22(20° C.) = t.b.d. pN


11
CCP-3-OT
6.0
k33(20° C.) = 17.4 pN


12
CLP-3-T
3.5
V0(20° C.) = 1.95 V


13
LB(S)-3-OT
6.0



14
LB-4-T
10.0



Σ

100.0





Remark: t.b.d.: to be determined






Example 25

The following mixture (M-25) is prepared and investigated.












Mixture 25








Composition










Compound
Concentration/











No.
Abbreviation
% by weight
Physical properties













 1
CC-3-V
26.5
T(N, I) = 101.0° C.


 2
CC-3-V1
8.0
ne(20° C., 589 nm) = 1.5770


 3
CC-3-2V1
7.5
Δn(20° C., 589 nm) = 0.0968


 4
CCP-V-1
4.0
ε(20°, 1 kHz) = 8.8


 5
CCP-V2-1
4.5
ε(20°, 1 kHz) = 3.7


 6
CCVC-3-V
4.0
Δε(20°, 1 kHz) = 5.1


 7
CCP-3-OT
4.5
εav.(20°, 1 kHz) = 5.4


 8
CLP-V-1
3.0
γ1(20° C.) = 92 mPa · s


 9
CLP-3-T
1.0
k11(20° C.) = 19.1 pN


10
CDUQU-3-F
8.0
k22(20° C.) = t.b.d. pN


11
DGUQU-4-F
4.0
k33(20° C.) = 20.3 pN


12
DGUQU-2-F
1.5
V0(20° C.) = 2.03 V


13
CCGU-3-F
4.0



14
PP-1-2V1
2.5



15
LB(S)-3-OT
7.0



16
LB-4-T
5.0



17
CC-3-O3
5.0



Σ

100.0





Remark: t.b.d.: to be determined






Example 26

The following mixture (M-26) is prepared and investigated.












Mixture 26








Composition










Compound
Concentration/











No.
Abbreviation
1% by weight
Physical properties













1
CC-3-V
28.0
T(N, I) = 102.0° C.


2
CC-3-V1
7.0
ne(20° C., 589 nm) = t.b.d.


3
CC-3-2V1
8.5
Δn(20° C., 589 nm) = t.b.d.


4
CCP-V-1
5.0
ϵ(20°, 1 kHz) = t.b.d.


5
CCP-V2-1
4.5
ϵ(20°, 1 kHz) = t.b.d.


6
CCVC-3-V
4.0
Δϵ(20°, 1 kHz) = t.b.d.


7
CCP-3-OT
5.0
ϵav.(20°, 1 kHz) = t.b.d.


8
CLP-V-1
4.0
γ1(20° C.) = t.b.d. mPa · s


9
CLP-3-T
1.0
k11(20° C.) = t.b.d. pN


10
CDUQU-3-F
8.0
k22(20° C.) = t.b.d. pN


11
DGUQU-4-F
4.0
k33(20° C.) = t.b.d. pN


12
DGUQU-2-F
1.5
V0(20° C.) = t.b.d. V


13
CCGU-3-F
2.5



14
PP-1-2V1
3.5



15
LB(S)-3-OT
7.0



16
LB-4-T
5.0



17
CC-3-O3
1.5



Σ

100.0






Remark: t.b.d.: to be determined






Example 27

The following mixture (M-27) is prepared and investigated.












Mixture 27








Composition










Compound
Concentration/











No.
Abbreviation
1% by weight
Physical properties













1
CC-3-V
29.5
T(N, I) = 103.0° C.


2
CC-3-V1
7.0
ne(20° C., 589 nm) = t.b.d.


3
CC-3-2V1
8.5
Δn(20° C., 589 nm) = t.b.d.


4
CCP-V-1
4.5
ϵ(20°, 1 kHz) = t.b.d.


5
CCP-V2-1
4.5
ϵ(20°, 1 kHz) = t.b.d.


6
CCVC-3-V
4.0
Δϵ(20°, 1 kHz) = t.b.d.


7
CCP-3-OT
5.0
ϵav.(20°, 1 kHz) = t.b.d.


8
CLP-V-1
4.0
γ1(20° C.) = t.b.d. mPa · s


9
CLP-3-T
1.0
k11(20° C.) = t.b.d. pN


10
CDUQU-3-F
8.0
k22(20° C.) = t.b.d. pN


11
DGUQU-4-F
4.0
k33(20° C.) = t.b.d. pN


12
DGUQU-2-F
1.5
V0(20° C.) = t.b.d. V


13
CCGU-3-F
3.5



14
PP-1-2V1
3.5



15
LB(S)-3-OT
7.0



16
LB-4-T
4.5



Σ

100.0






Remark: t.b.d.: to be determined






Example 28

The following mixture (M-28) is prepared and investigated.












Mixture 28








Composition










Compound
Concentration/











No.
Abbreviation
1% by weight
Physical properties













1
CC-3-V
29.5
T(N, I) = 102.0° C.


2
CC-3-V1
7.5
ne(20° C., 589 nm) = t.b.d.


3
CC-3-2V1
8.5
Δn(20° C., 589 nm) = t.b.d.


4
CCP-V-1
4.5
ϵ(20°, 1 kHz) = t.b.d.


5
CCP-V2-1
4.5
ϵ(20°, 1 kHz) = t.b.d.


6
CCVC-3-V
4.0
Δϵ(20°, 1 kHz) = t.b.d.


7
CCP-3-OT
5.0
ϵav.(20°, 1 kHz) = t.b.d.


8
CLP-V-1
4.0
γ1(20° C.) = t.b.d. mPa · s


9
CLP-3-T
1.0
k11(20° C.) = t.b.d. pN


10
CDUQU-3-F
8.0
k22(20° C.) = t.b.d. pN


11
DGUQU-4-F
4.0
k33(20° C.) = t.b.d. pN


12
DGUQU-2-F
1.5
V0(20° C.) = t.b.d. V


13
CCGU-3-F
3.0



14
PP-1-2V1
3.0



15
LB(S)-3-OT
5.5



16
LB-4-T
6.5



Σ

100.0






Remark: t.b.d.: to be determined






Example 29

The following mixture (M-29) is prepared and investigated.












Mixture 29








Composition










Compound
Stration/











No.
Abbreviation
1% by weight
Physical properties













1
CC-3-V
26.5
T(N, I) = 102.0° C.


2
CC-3-V1
8.0
ne(20° C., 589 nm) = 1.5744


3
CC-3-2V1
7.5
Δn(20° C., 589 nm) = 0.0943


4
CCP-V-1
4.0
ϵ(20°, 1 kHz) = 8.7


5
CCP-V2-1
4.5
ϵ(20°, 1 kHz) = 3.6


6
CCVC-3-V
3.0
Δϵ(20°, 1 kHz) = 5.1


7
CCP-3-OT
4.5
ϵav.(20°, 1 kHz) = 5.3


8
CLP-V-1
3.0
γ1(20° C.) = 95 mPa · s


9
CLP-3-T
1.0
k11(20° C.) = 19.2 pN


10
CDUQU-3-F
8.0
k22(20° C.) = t.b.d. pN


11
DGUQU-4-F
4.0
k33(20° C.) = 19.7 pN


12
DGUQU-2-F
1.5
V0(20° C.) = 2.05 V


13
CCGU-3-F
4.0



14
PP-1-2V1
2.5



15
LB(S)-3-OT
6.0



16
LB-4-T
5.0



17
CC-3-O3
4.0



18
CCOC-3-3
2.0



19
CCOC-4-3
1.0



Σ

100.0






Remark: t.b.d.: to be determined






Example 30

The following mixture (M-30) is prepared and investigated.












Mixture 30








Composition










Compound
Concentration/











No.
Abbreviation
1% by weight
Physical properties













1
CC-3-V
29.0
T(N, I) = 102.0° C.


2
CC-3-V1
7.0
ne(20° C., 589 nm) = 1.5722


3
CC-3-2V1
8.5
Δn(20° C., 589 nm) = 0.0926


4
CCP-V-1
5.0
ϵ(20°, 1 kHz) = 8.6


5
CCP-V2-1
4.5
ϵ(20°, 1 kHz) = 3.6


6
CCVC-3-V
4.0
Δϵ(20°, 1 kHz) = 5.0


7
CCP-3-OT
3.0
ϵav.(20°, 1 kHz) = 5.3


8
CLP-V-1
4.0
γ1(20° C.) = 93 mPa · s


9
CLP-3-T
1.0
k11(20° C.) = 18.8 pN


10
CDUQU-3-F
8.0
k22(20° C.) = t.b.d. pN


11
DGUQU-4-F
4.0
k33(20° C.) = 20.1 pN


12
DGUQU-2-F
1.5
V0(20° C.) = 2.05 V


13
CCGU-3-F
4.0



14
LB(S)-3-OT
7.0



15
CC-3-O3
5.0



16
LB-4-T
4.5



Σ

100.0






Remark: t.b.d.: to be determined






Example 31

The following mixture (M-31) is prepared and investigated.












Mixture 31








Composition










Compound
Concentration/











No.
Abbreviation
1% by weight
Physical properties













1
CC-3-V
33.0
T(N, I) = 101.0° C.


2
CC-3-V1
7.0
ne(20° C., 589 nm) = t.b.d.


3
CC-3-2V1
7.5
Δn(20° C., 589 nm) = t.b.d.


4
CCP-V-1
5.0
ϵ(20°, 1 kHz) = t.b.d.


5
CCP-V2-1
4.5
ϵ(20°, 1 kHz) = t.b.d.


6
CCVC-3-V
2.0
Δϵ(20°, 1 kHz) = t.b.d.


7
CCP-3-OT
3.0
ϵav.(20°, 1 kHz) = t.b.d.


8
CLP-V-1
4.0
γ1(20° C.) = t.b.d. mPa · s


9
CLP-3-T
1.5
k11(20° C.) = t.b.d. pN


10
CDUQU-3-F
8.5
k22(20° C.) = t.b.d. pN


11
DGUQU-4-F
4.5
k33(20° C.) = t.b.d. pN


12
DGUQU-2-F
2.0
V0(20° C.) = t.b.d. V


13
CCGU-3-F
1.5



14
LB(S)-3-OT
5.0



15
LB-4-T
5.0



16
CCOC-3-3
3.0



17
CCOC-4-3
3.0



Σ

100.0






Remark: t.b.d.: to be determined






Example 32

The following mixture (M-32) is prepared and investigated.












Mixture 32








Composition










Compound
Concentration/











No.
Abbreviation
1% by weight
Physical properties













1
CC-3-V
30.0
T(N, I) = 102.0° C.


2
CC-3-V1
7.0
ne(20° C., 589 nm) = 1.5713


3
CC-3-2V1
7.5
Δn(20° C., 589 nm) = 0.0917


4
CCP-V-1
5.0
ϵ(20°, 1 kHz) = 8.6


5
CCP-V2-1
4.5
ϵ(20°, 1 kHz) = 3.5


6
CCVC-3-V
2.0
Δϵ(20°, 1 kHz) = 5.1


7
CCP-3-OT
3.0
ϵav.(20°, 1 kHz) = 5.2


8
CLP-V-1
4.0
γ1(20° C.) = 96 mPa · s


9
CLP-3-T
1.5
k11(20° C.) = 18.9 pN


10
CDUQU-3-F
9.0
k22(20° C.) = t.b.d. pN


11
DGUQU-4-F
5.5
k33(20° C.) = 18.8 pN


12
CCGU-3-F
1.5
V0(20° C.) = 2.03 V


13
PP-1-2V1
1.5



14
LB(S)-3-OT
5.0



15
LB-4-T
5.0



16
CCQU-3-F
2.0



17
CCOC-3-3
3.0



18
CCOC-4-3
3.0



Σ

100.0






Remark: t.b.d.: to be determined






Example 33

The following mixture (M-33) is prepared and investigated.












Mixture 33








Composition










Compound
Concentration/











No.
Abbreviation
1% by weight
Physical properties













1
DGUQU-4-F
5.5
T(N, I) = 81.5° C.


2
PPGU-3-F
0.5
ne(20° C., 589 nm) = 1.5824


3
CCG-V-F
10.0
Δn(20° C., 589 nm) = 0.0984


4
CC-3-V
46.5
ϵ(20°, 1 kHz) = 8.1


5
CCP-V-1
8.5
ϵ(20°, 1 kHz) = 4.0


6
PP-1-2V1
5.0
Δϵ(20°, 1 kHz) = 4.1


7
CPPC-3-3
2.0
ϵav.(20°, 1 kHz) = 5.4


8
LB(S)-3-OT
10.0
γ1(20° C.) = 64 mPa · s


9
LB-4-T
6.0
k11(20° C.) = 13.4 pN


10
CDUQU-3-F
6.0
k22(20° C.) = t.b.d. pN


Σ

100.0
k33(20° C.) = 15.2 pN





V0(20° C.) = 1.90 V





Remark: t.b.d.: to be determined






Example 34

The following mixture (M-34) is prepared and investigated.












Mixture 34








Composition










Compound
Concentration/











No.
Abbreviation
1% by weight
Physical properties













1
DGUQU-2-F
4.0
T(N, I) = 99.6° C.


2
DGUQU-4-F
6.0
ne(20° C., 589 nm) = t.b.d.


3
CDUQU-3-F
2.5
Δn(20° C., 589 nm) = t.b.d.


4
CCOC-4-3
3.5
ϵ(20°, 1 kHz) = t.b.d.


5
CCP-3-OT
6.0
ϵ(20°, 1 kHz) = t.b.d.


6
CCP-5-OT
5.0
Δϵ(20°, 1 kHz) = t.b.d.


7
CCP-V-1
8.0
ϵav.(20°, 1 kHz) = t.b.d.


8
CVCP-V-1
5.0
γ1(20° C.) = t.b.d. mPa · s


9
CCVC-3-V
5.0
k11(20° C.) = t.b.d. pN


10
CC-3-V
29.0
k22(20° C.) = t.b.d. pN


11
CC-2-3
7.0
k33(20° C.) = t.b.d. pN


12
CC-3-4
3.0
V0(20° C.) = t.b.d. V


13
LB(S)-3-OT
6.0



14
LB-4-T
10.0



Σ

100.0






Remark: t.b.d.: to be determined






Example 35

The following mixture (M-35) is prepared and investigated.












Mixture 35








Composition










Compound
Concentration/











No.
Abbreviation
1% by weight
Physical properties













1
CC-3-V
30.0
T(N, I) = 106.0° C.


2
CC-3-V1
7.5
ne(20° C., 589 nm) = 1.5725


3
CC-3-2V1
8.5
Δn(20° C., 589 nm) = 0.0910


4
PP-1-2V1
1.5
ϵ(20°, 1 kHz) = 8.2


5
CCP-V-1
8.0
ϵ(20°, 1 kHz) = 3.0


6
CCP-V2-1
4.5
Δϵ(20°, 1 kHz) = 5.2


7
CCVC-3-V
4.0
ϵav.(20°, 1 kHz) = 4.8


8
CCP-3-OT
5.0
γ1(20° C.) = 91 mPas


9
CLP-V-1
6.5
k11(20° C.) = 19.2 pN


10
CLP-3-T
4.0
k22(20° C.) = t.b.d. pN


11
CDUQU-3-F
8.0
k33(20° C.) = 21.1 pN


12
DGUQU-2-F
1.5
V0(20° C.) = 2.02 V


13
DGUQU-4-F
4.0



14
CCGU-3-F
3.5



15
LB(S)-3-OT
1.5



16
LB-4-T
2.0



Σ

100.0






Remark: t.b.d.: to be determined






Example 36

The following mixture (M-36) is prepared and investigated.












Mixture 36








Composition










Compound
Concentration/











No.
Abbreviation
1% by weight
Physical properties













1
CC-3-V
29.5
T(N, I) = 107.0° C.


2
CC-3-V1
7.5
ne(20° C., 589 nm) = 1.5735


3
CC-3-2V1
8.5
Δn(20° C., 589 nm) = 0.0917


4
PP-1-2V1
1.5
ϵ(20°, 1 kHz) = 8.3


5
CCP-V-1
10.5
ϵ(20°, 1 kHz) = 3.0


6
CCP-V2-1
2.0
Δϵ(20°, 1 kHz) = 5.2


7
CCVC-3-V
4.0
ϵav.(20°, 1 kHz) = 4.8


8
CCP-3-OT
5.5
γ1(20° C.) = 91 mPas


9
CLP-V-1
6.5
k11(20° C.) = 19.1 pN


10
CLP-3-T
3.5
k22(20° C.) = t.b.d. pN


11
CDUQU-3-F
8.0
k33(20° C.) = 20.9 pN


12
DGUQU-2-F
1.5
V0(20° C.) = 2.01 V


13
DGUQU-4-F
4.0



14
CCGU-3-F
4.0



15
LB(S)-3-OT
2.0



16
LB-4-T
1.5



Σ

100.0






Remark: t.b.d.: to be determined






Example 37

The following mixture (M-37) is prepared and investigated.












Mixture 37








Composition










Compound
Concentration/











No.
Abbreviation
1% by weight
Physical properties













1
CC-3-V
29.0
T(N, I) = 106.5° C.


2
CC-3-V1
7.0
ne(20° C., 589 nm) = 1.5740


3
CC-3-2V1
8.5
Δn(20° C., 589 nm) = 0.0922


4
PP-1-2V1
1.5
ϵ(20°, 1 kHz) = 8.2


5
CCP-V-1
13.0
ϵ(20°, 1 kHz) = 3.1


6
CCP-V2-1
2.0
Δϵ(20°, 1 kHz) = 5.1


7
CCVC-3-V
4.0
ϵav.(20°, 1 kHz) = 4.8


8
CCP-3-OT
5.0
γ1(20° C.) = 93 mPa · s


9
CLP-V-1
3.5
k11(20° C.) = 19.1 pN


10
CLP-3-T
4.5
k22(20° C.) = t.b.d. pN


11
CDUQU-3-F
8.0
k33(20° C.) = 21.1 pN


12
DGUQU-2-F
1.5
V0(20° C.) = 2.03 V


13
DGUQU-4-F
3.5



14
CCGU-3-F
3.5



15
LB(S)-3-OT
4.0



16
LB-4-T
1.5



Σ

100.0






Remark: t.b.d.: to be determined






Example 38

The following mixture (M-38) is prepared and investigated.












Mixture 38








Composition










Compound
Concentration/











No.
Abbreviation
1% by weight
Physical properties













1
CC-3-V
29.5
T(N, I) = 106.0° C.


2
CC-3-V1
7.5
ne(20° C., 589 nm) = 1.5754


3
CC-3-2V1
8.5
Δn(20° C., 589 nm) = 0.0932


4
PP-1-2V1
2.0
ϵ(20°, 1 kHz) = 8.3


5
CCP-V-1
11.0
ϵ(20°, 1 kHz) = 3.1


6
CCVC-3-V
4.0
Δϵ(20°, 1 kHz) = 5.2


7
CCP-3-OT
5.0
ϵav.(20°, 1 kHz) = 4.9


8
CLP-V-1
6.5
γ1(20° C.) = 89 mPa · s


9
CLP-3-T
4.0
k11(20° C.) = 19.2 pN


10
APUQU-2-F
1.0
k22(20° C.) = t.b.d. pN


11
CDUQU-3-F
8.0
k33(20° C.) = 20.6 pN


12
DGUQU-2-F
1.5
V0(20° C.) = 2.01 V


13
DGUQU-4-F
3.0



14
CCGU-3-F
4.0



15
LB(S)-3-OT
3.5



16
LB-4-T
1.0



Σ

100.0






Remark: t.b.d.: to be determined






Example 39

The following mixture (M-39) is prepared and investigated.












Mixture 39








Composition










Compound
Concentration/











No.
Abbreviation
1% by weight
Physical properties













1
DGUQU-4-F
6.0
T(N, I) = 79.5° C.


2
APUQU-3-F
2.5
ne(20° C., 589 nm) = 1.5785


3
PGUQU-3-F
4.0
Δn(20° C., 589 nm) = 0.0960


4
PPGU-3-F
0.5
ϵ(20°, 1 kHz) = 7.8


5
CCP-V-1
12.5
ϵ(20°, 1 kHz) = 3.8


6
CLP-3-T
1.0
Δϵ(20°, 1 kHz) = 4.0


7
CC-3-V
41.5
ϵav.(20°, 1 kHz) = 5.2


8
CC-V-V1
16.0
γ1(20° C.) = 58 mPa · s


9
LB(S)-3-OT
10.0
k11(20° C.) = 13.1 pN


10
LB-4-T
6.0
k22(20° C.) = t.b.d. pN


Σ

100.0
k33(20° C.) = 15.1 pN





V0(20° C.) = 1.91 V





Remark: t.b.d.: to be determined






Example 40

The following mixture (M-40) is prepared and investigated.












Mixture 40








Composition










Compound
Concentration/











No.
Abbreviation
1% by weight
Physical properties













1
CC-3-V
30.0
T(N, I) = 107.5° C.


2
CC-3-V1
7.5
ne(20° C., 589 nm) = 1.5728


3
CC-3-2V1
8.5
Δn(20° C., 589 nm) = 0.0914


4
CCP-V-1
12.0
ϵ(20°, 1 kHz) = 8.4


5
CCVC-3-V
4.0
ϵ(20°, 1 kHz) = 3.1


6
CCP-3-OT
5.0
Δϵ(20°, 1 kHz) = 5.3


7
CLP-V-1
6.0
ϵav.(20°, 1 kHz) = 4.9


8
CLP-3-T
4.5
γ1(20° C.) = 94 mPa · s


9
APUQU-2-F
1.0
k11(20° C.) = 19.3 pN


10
CDUQU-3-F
8.0
k22(20° C.) = t.b.d. pN


11
DGUQU-2-F
1.5
k33(20° C.) = 21.4 pN


12
DGUQU-4-F
3.0
V0(20° C.) = 2.02 V


13
CCGU-3-F
3.5



14
LB(S)-3-OT
4.0



15
LB-4-T
1.5



Σ

100.0






Remark: t.b.d.: to be determined






Example 41

The following mixture (M-41) is prepared and investigated.












Mixture 41







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
29.0


2
CC-3-V1
7.5


3
CC-3-2V1
8.5


4
PP-1-2V1
2.0


5
CCP-V-1
11.5


6
CCVC-3-V
4.0


7
CCP-3-OT
5.5


8
CLP-V-1
6.5


9
CLP-3-T
4.0


10
CDUQU-3-F
8.0


11
DGUQU-2-F
1.5


12
DGUQU-4-F
3.5


13
CCGU-3-F
4.0


14
LB(S)-3-OT
3.5


15
LB-4-T
1.0


Σ

100.0










Physical properties














T(N, I) =
106.5°
C.










ne(20° C., 589 nm) =
1.5752



Δn(20° C., 589 nm) =
0.0928



ε(20°, 1 kHz) =
8.2



ε(20°, 1 kHz) =
3.0



Δε(20°, 1 kHz) =
5.2



εav.(20°, 1 kHz) =
4.8











γ1(20° C.) =
91
mPa · s



k11(20° C.) =
19.4
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
20.9
pN



V0(20° C.) =
2.04
V







Remark: t.b.d.: to be determined






Example 42

The following mixture (M-42) is prepared and investigated.












Mixture 42







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
28.5


2
CC-3-V1
7.5


3
CC-3-2V1
8.5


4
CCP-V-1
11.5


5
CCP-3-1
3.0


6
CCVC-3-V
4.0


7
CCP-3-OT
5.5


8
CLP-V-1
6.0


9
CLP-3-T
4.5


10
CDUQU-3-F
8.0


11
DGUQU-2-F
1.5


12
DGUQU-4-F
3.5


13
CCGU-3-F
3.5


14
LB(S)-3-OT
3.5


15
LB-4-T
1.0


Σ

100.0










Physical properties














T(N, I) =
110.0°
C.










ne(20° C., 589 nm) =
1.5712



Δn(20° C., 589 nm) =
0.0898



ε(20°, 1 kHz) =
8.3



ε(20°, 1 kHz) =
3.0



Δε(20°, 1 kHz) =
5.3



εav.(20°, 1 kHz) =
4.8











γ1(20° C.) =
102
mPa · s



k11(20° C.) =
19.8
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
22.1
pN



V0(20° C.) =
2.06
V







Remark: t.b.d.: to be determined






Example 43

The following mixture (M-43) is prepared and investigated.












Mixture 43







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CDUQU-3-F
6.5


2
DGUQU-2-F
3.0


3
DGUQU-4-F
5.0


4
CCOC-3-3
4.0


5
CCOC-4-3
4.0


6
CCP-V-1
8.0


7
CCVC-3-V
4.0


8
CLP-3-T
3.5


9
CC-3-2V1
6.0


10
CC-3-V
32.0


11
CC-3-V1
8.0


12
LB(S)-3-OT
6.0


13
LB-4-T
10.0


Σ

100.0










Physical properties














T(N, I) =
97.9°
C.










ne(20° C., 589 nm) =
1.5715



Δn(20° C., 589 nm) =
0.0927



ε(20°, 1 kHz) =
9.0



ε(20°, 1 kHz) =
4.1



Δε(20°, 1 kHz) =
4.9



εav.(20°, 1 kHz) =
5.7











γ1(20° C.) =
97
mPa · s



k11(20° C.) =
18.0
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
17.9
pN



V0(20° C.) =
2.02
V







Remark: t.b.d.: to be determined






Example 44

The following mixture (M-44) is prepared and investigated.












Mixture 44







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CDUQU-3-F
6.0


2
DGUQU-2-F
3.0


3
DGUQU-4-F
5.0


4
CCOC-3-3
1.5


5
CCOC-4-3
4.0


6
CCP-V-1
9.5


7
CCP-V2-1
4.0


8
CCVC-3-V
4.0


9
CLP-3-T
4.0


10
CC-3-2V1
6.0


11
CC-3-V
29.0


12
CC-3-V1
8.0


13
LB(S)-3-OT
6.0


14
LB-4-T
10.0


Σ

100.0










Physical properties














T(N, I) =
101.9°
C.










ne(20° C., 589 nm) =
1.5767



Δn(20° C., 589 nm) =
0.0962



ε(20°, 1 kHz) =
9.0



ε(20°, 1 kHz) =
4.1



Δε(20°, 1 kHz) =
4.9



εav.(20°, 1 kHz) =
5.7











γ1(20° C.) =
103
mPa · s



k11(20° C.) =
18.6
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
18.5
pN



V0(20° C.) =
2.08
V







Remark: t.b.d.: to be determined






Example 45

The following mixture (M-45) is prepared and investigated.












Mixture 45







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
28.5


2
CC-3-V1
7.5


3
CC-3-2V1
8.5


4
PP-1-2V1
1.0


5
CCP-V-1
12.0


6
CCVC-3-V
4.0


7
CCP-3-OT
5.0


8
CLP-V-1
6.0


9
CLP-3-T
3.5


10
CDUQU-3-F
7.5


11
DGUQU-2-F
1.5


12
DGUQU-4-F
4.0


13
CCGU-3-F
4.0


14
LB(S)-3-OT
4.0


15
LB-4-T
1.5


16
CC-3-O3
1.5


Σ

100.0










Physical properties














T(N, I) =
106.0°
C.










ne(20° C., 589 nm) =
1.5741



Δn(20° C., 589 nm) =
0.0924



ε(20°, 1 kHz) =
8.3



ε(20°, 1 kHz) =
3.1



Δε(20°, 1 kHz) =
5.2



εav.(20°, 1 kHz) =
4.8











γ1(20° C.) =
93
mPa · s



k11(20° C.) =
19.3
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
20.9
pN



V0(20° C.) =
2.03
V







Remark: t.b.d.: to be determined






Example 46

The following mixture (M-46) is prepared and investigated.












Mixture 46







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
29.0


2
CC-3-V1
7.5


3
CC-3-2V1
8.5


4
PP-1-2V1
1.0


5
CCP-V-1
9.5


6
CCVC-3-V
5.0


7
CCP-3-OT
4.5


8
CLP-V-1
7.0


9
CLP-3-T
2.0


10
CDUQU-3-F
8.0


11
DGUQU-2-F
1.5


12
DGUQU-4-F
4.0


13
CCGU-3-F
4.0


14
LB(S)-3-OT
5.5


15
LB-4-T
1.0


16
CC-3-O3
2.0


Σ

100.0










Physical properties














T(N, I) =
106.5°
C.










ne(20° C., 589 nm) =
1.5736



Δn(20° C., 589 nm) =
0.0925



ε(20°, 1 kHz) =
8.3



ε(20°, 1 kHz) =
3.2



Δε(20°, 1 kHz) =
5.1



εav.(20°, 1 kHz) =
4.9











γ1(20° C.) =
92
mPa · s



k11(20° C.) =
19.3
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
20.3
pN



V0(20° C.) =
2.04
V







Remark: t.b.d.: to be determined






Example 47

The following mixture (M-47) is prepared and investigated.












Mixture 47







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
APUQU-3-F
3.0


2
PGUQU-3-F
7.5


3
CDUQU-3-F
5.0


4
PPGU-3-F
0.5


5
CCP-V-1
11.0


6
CLP-3-T
1.0


7
CC-3-V
44.0


8
CC-V-V1
11.0


9
LB(S)-3-OT
11.0


10
LB-4-T
6.0


Σ

100.0










Physical properties














T(N, I) =
83.0°
C.










ne(20° C., 589 nm) =
t.b.d



Δn(20° C., 589 nm) =
t.b.d



ε(20°, 1 kHz) =
t.b.d



ε(20°, 1 kHz) =
t.b.d



Δε(20°, 1 kHz) =
t.b.d



εav.(20°, 1 kHz) =
t.b.d











γ1(20° C.) =
t.b.d
mPa · s



k11(20° C.) =
t.b.d
pN



k22(20° C.) =
t.b.d
pN



k33(20° C.) =
t.b.d
pN



V0(20° C.) =
t.b.d
V







Remark: t.b.d.: to be determined






Example 48

The following mixture (M-48) is prepared and investigated.












Mixture 48







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
APUQU-3-F
4.0


2
PGUQU-3-F
4.0


3
CDUQU-3-F
8.0


4
PPGU-3-F
0.5


5
CCP-V-1
10.0


6
CLP-3-T
1.0


7
CC-3-V
44.0


8
CC-V-V1
11.5


9
LB(S)-3-OT
11.0


10
LB-4-T
6.0


Σ

100.0










Physical properties














T(N, I) =
82.0°
C.










ne(20° C., 589 nm) =
t.b.d



Δn(20° C., 589 nm) =
t.b.d



ε(20°, 1 kHz) =
t.b.d



ε(20°, 1 kHz) =
t.b.d



Δε(20°, 1 kHz) =
t.b.d



εav.(20°, 1 kHz) =
t.b.d











γ1(20° C.) =
t.b.d
mPa · s



k11(20° C.) =
t.b.d
pN



k22(20° C.) =
t.b.d
pN



k33(20° C.) =
t.b.d
pN



V0(20° C.) =
t.b.d
V







Remark: t.b.d.: to be determined






Example 49

The following mixture (M-49) is prepared and investigated.












Mixture 49







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
APUQU-2-F
6.0


2
APUQU-3-F
6.0


3
PGUQU-3-F
3.5


4
PPGU-3-F
0.5


5
CCP-V-1
10.5


6
CLP-3-T
1.0


7
CC-3-V
43.5


8
CC-V-V1
12.0


9
LB(S)-3-OT
11.0


10
LB-4-T
6.0


Σ

100.0










Physical properties














T(N, I) =
80.5°
C.










ne(20° C., 589 nm) =
1.5820



Δn(20° C., 589 nm) =
0.0994



ε(20°, 1 kHz) =
8.4



ε(20°, 1 kHz) =
3.9



Δε(20°, 1 kHz) =
4.4



εav.(20°, 1 kHz) =
5.4











γ1(20° C.) =
61
mPa · s



k11(20° C.) =
13.4
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
15.3
pN



V0(20° C.) =
1.83
V







Remark: t.b.d.: to be determined






Example 50

The following mixture (M-50) is prepared and investigated.












Mixture 50







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CDUQU-3-F
6.0


2
DGUQU-2-F
3.0


3
DGUQU-4-F
4.0


4
CCOC-3-3
3.0


5
CCOC-4-3
4.0


6
CCU-3-F
3.0


7
CCP-V-1
6.5


8
CCQU-3-F
3.0


9
CCVC-3-V
4.0


10
CLP-3-T
4.0


11
CC-3-2V1
5.0


12
CC-3-V
30.5


13
CC-3-V1
8.0


14
LB(S)-3-OT
6.0


15
LB-4-T
10.0


Σ

100.0










Physical properties














T(N, I) =
97.3°
C.










ne(20° C., 589 nm) =
1.5706



Δn(20° C., 589 nm) =
0.0926



ε(20°, 1 kHz) =
9.4



ε(20°, 1 kHz) =
4.2



Δε(20°, 1 kHz) =
5.2



εav.(20°, 1 kHz) =
5.9











γ1(20° C.) =
101
mPa · s



k11(20° C.) =
17.6
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
17.4
pN



V0(20° C.) =
1.95
V







Remark: t.b.d.: to be determined






Example 51

The following mixture (M-51) is prepared and investigated.












Mixture 51







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
APUQU-2-F
5.0


2
APUQU-3-F
6.0


3
PGUQU-3-F
5.0


4
PPGU-3-F
0.5


5
CCP-V-1
10.5


6
CLP-3-T
1.0


7
CC-3-V
51.0


8
CC-3-V1
4.0


9
LB(S)-3-OT
11.0


10
LB-4-T
6.0


Σ

100.0










Physical properties














T(N, I) =
81.5°
C.










ne(20° C., 589 nm) =
1.5816



Δn(20° C., 589 nm) =
0.0997



ε(20°, 1 kHz) =
8.6



ε(20°, 1 kHz) =
3.9



Δε(20°, 1 kHz) =
4.6



εav.(20°, 1 kHz) =
5.5











γ1(20° C.) =
62
mPa · s



k11(20° C.) =
14.0
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
14.9
pN



V0(20° C.) =
1.84
V







Remark: t.b.d.: to be determined






Example 52

The following mixture (M-52) is prepared and investigated.












Mixture 52







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
33.5


2
CC-3-V1
8.0


3
CC-3-2V1
7.0


4
CCP-V-1
10.0


5
CCP-V2-1
6.0


6
APUQU-2-F
3.0


7
APUQU-3-F
4.0


8
PP-1-2V1
6.0


9
LB(S)-3-OT
10.0


10
LB-3-T
6.0


11
CY-5-O2
6.5


Σ

100.0










Physical properties














T(N, I) =
80.5°
C.










ne(20° C., 589 nm) =
1.5852



Δn(20° C., 589 nm) =
0.1011



ε(20°, 1 kHz) =
5.8



ε(20°, 1 kHz) =
4.1



Δε(20°, 1 kHz) =
1.7



εav.(20°, 1 kHz) =
4.7











γ1(20° C.) =
65
mPa · s



k11(20° C.) =
15.8
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
16.7
pN



V0(20° C.) =
3.21
V







Remark: t.b.d.: to be determined






Example 53

The following mixture (M-53) is prepared and investigated.












Mixture 53







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
46.0


2
CC-3-V1
7.0


3
PP-1-2V1
6.0


4
LB-3-T
8.0


5
LB(S)-3-OT
12.0


6
CLP-3-T
5.0


7
PGP-2-2V
11.0


8
DGUQU-4-F
5.0


Σ

100.0










Physical properties














T(N, I) =
76.5°
C.










ne(20° C., 589 nm) =
1.6044



Δn(20° C., 589 nm) =
0.1178



ε(20°, 1 kHz) =
6.5



ε(20°, 1 kHz) =
4.0



Δε(20°, 1 kHz) =
2.5



εav.(20°, 1 kHz) =
4.9











γ1(20° C.) =
57
mPa · s



k11(20° C.) =
17.0
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
15.0
pN



V0(20° C.) =
2.74
V







Remark: t.b.d.: to be determined






Example 54

The following mixture (M-54) is prepared and investigated.












Mixture 54







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
47.0


2
CC-3-V1
8.0


3
CC-3-2V1
6.0


4
PP-1-2V1
4.0


5
LB-3-T
10.0


6
LB(S)-3-OT
12.0


7
CCP-V-1
6.0


8
DGUQU-4-F
4.0


9
APUQU-2-F
3.0


Σ

100.0










Physical properties














T(N, I) =
74.0°
C.










ne(20° C., 589 nm) =
1.5778



Δn(20° C., 589 nm) =
0.0968



ε(20°, 1 kHz) =
6.4



ε(20°, 1 kHz) =
4.1



Δε(20°, 1 kHz) =
2.3



εav.(20°, 1 kHz) =
4.9











γ1(20° C.) =
55
mPa · s



k11(20° C.) =
15.0
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
15.0
pN



V0(20° C.) =
2.68
V







Remark: t.b.d.: to be determined






Example 55

The following mixture (M-55) is prepared and investigated.












Mixture 55







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
39.0


2
CC-3-V1
8.0


3
CC-3-2V1
8.5


4
CCP-V-1
9.0


5
CCP-V2-1
2.0


6
APUQU-2-F
6.0


7
APUQU-3-F
7.0


8
PP-1-2V1
4.5


9
LB(S)-3-OT
10.0


10
LB-3-T
6.0


Σ

100.0










Physical properties














T(N, I) =
82.5°
C.










ne(20° C., 589 nm) =
1.5825



Δn(20° C., 589 nm) =
0.0998



ε(20°, 1 kHz) =
7.4



ε(20°, 1 kHz) =
3.7



Δε(20°, 1 kHz) =
3.6



εav.(20°, 1 kHz) =
4.9











γ1(20° C.) =
64
mPa · s



k11(20° C.) =
16.3
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
16.2
pN



V0(20° C.) =
2.24
V







Remark: t.b.d.: to be determined






Example 56

The following mixture (M-56) is prepared and investigated.












Mixture 56







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
45.5


2
CC-3-V1
8.0


3
CC-3-2V1
7.0


4
PP-1-2V1
4.5


5
LB-3-T
7.0


6
LB(S)-3-OT
12.0


7
CCP-V-1
6.5


8
PGP-2-2V
2.0


9
DGUQU-4-F
4.0


10
APUQU-2-F
3.5


Σ

100.0










Physical properties














T(N, I) =
75.5°
C.










ne(20° C., 589 nm) =
1.5810



Δn(20° C., 589 nm) =
0.0985



ε(20°, 1 kHz) =
6.3



ε(20°, 1 kHz) =
3.8



Δε(20°, 1 kHz) =
2.5



εav.(20°, 1 kHz) =
4.7











γ1(20° C.) =
55
mPa · s



k11(20° C.) =
15.1
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
15.0
pN



V0(20° C.) =
2.59
V







Remark: t.b.d.: to be determined






Example 57

The following mixture (M-57) is prepared and investigated.












Mixture 57







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
45.5


2
CC-3-V1
7.0


3
CC-3-2V1
4.0


4
PP-1-2V1
7.0


5
LB-3-T
6.5


6
LB(S)-3-OT
12.0


7
PGP-1-2V
4.0


8
PGP-2-2V
7.0


9
DGUQU-4-F
4.5


10
PGUQU-4-F
2.5


Σ

100.0










Physical properties














T(N, I) =
74.0°
C.










ne(20° C., 589 nm) =
1.6046



Δn(20° C., 589 nm) =
0.1178



ε(20°, 1 kHz) =
6.4



ε(20°, 1 kHz) =
3.9



Δε(20°, 1 kHz) =
2.5



εav.(20°, 1 kHz) =
4.7











γ1(20° C.) =
55
mPa · s



k11(20° C.) =
15.5
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
14.1
pN



V0(20° C.) =
2.61
V







Remark: t.b.d.: to be determined






Example 58

The following mixture (M-58) is prepared and investigated.












Mixture 58







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
44.5


2
CC-3-V1
7.0


3
CC-3-2V1
4.5


4
PP-1-2V1
7.0


5
LB-3-T
6.5


6
LB(S)-3-OT
12.0


7
CLP-3-T
2.5


8
PGP-1-2V
4.0


9
PGP-2-2V
6.0


10
DGUQU-4-F
3.5


11
PGUQU-4-F
2.5


Σ

100.0










Physical properties














T(N, I) =
74.0°
C.










ne(20° C., 589 nm) =
t.b.d



Δn(20° C., 589 nm) =
t.b.d



ε(20°, 1 kHz) =
t.b.d



ε(20°, 1 kHz) =
t.b.d



Δε(20°, 1 kHz) =
t.b.d



εav.(20°, 1 kHz) =
t.b.d











γ1(20° C.) =
t.b.d
mPa · s



k11(20° C.) =
t.b.d
pN



k22(20° C.) =
t.b.d
pN



k33(20° C.) =
t.b.d
pN



V0(20° C.) =
t.b.d
V







Remark: t.b.d.: to be determined






Example 59

The following mixture (M-59) is prepared and investigated.












Mixture 59







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
46.5


2
CC-3-V1
7.0


3
CC-3-2V1
4.0


4
PP-1-2V1
7.0


5
LB-3-T
4.0


6
LB(S)-3-OT
12.0


7
PGP-1-2V
5.5


8
PGP-2-2V
7.0


9
DGUQU-4-F
4.5


10
PGUQU-4-F
2.5


Σ

100.0










Physical properties














T(N, I) =
74.5°
C.










ne(20° C., 589 nm) =
1.6047



Δn(20° C., 589 nm) =
0.1170



ε(20°, 1 kHz) =
6.1



ε(20°, 1 kHz) =
3.6



Δε(20°, 1 kHz) =
2.5



εav.(20°, 1 kHz) =
4.5











γ1(20° C.) =
53
mPa · s



k11(20° C.) =
15.1
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
14.1
pN



V0(20° C.) =
2.59
V







Remark: t.b.d.: to be determined






Example 60

The following mixture (M-60) is prepared and investigated.












Mixture 60







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
42.0


2
CC-3-V1
8.0


3
CC-3-2V1
7.0


4
PP-1-2V1
4.5


5
LB-3-T
6.0


6
LB(S)-3-OT
12.0


7
CCP-V-1
10.5


8
PGP-2-2V
2.0


9
DGUQU-4-F
4.0


10
APUQU-2-F
4.0


Σ

100.0










Physical properties














T(N, I) =
79.5°
C.










ne(20° C., 589 nm) =
1.5843



Δn(20° C., 589 nm) =
0.1006



ε(20°, 1 kHz) =
6.4



ε(20°, 1 kHz) =
3.8



Δε(20°, 1 kHz) =
2.6



εav.(20°, 1 kHz) =
4.6











γ1(20° C.) =
58
mPa · s



k11(20° C.) =
15.7
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
15.6
pN



V0(20° C.) =
2.57
V







Remark: t.b.d.: to be determined






Example 61

The following mixture (M-61) is prepared and investigated.












Mixture 61







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
42.0


2
CC-3-V1
8.0


3
CC-3-2V1
7.0


4
PP-1-2V1
4.5


5
LB-3-T
6.0


6
LB(S)-3-OT
12.0


7
CLP-3-T
2.5


8
CCP-V-1
9.0


9
PGP-2-2V
2.0


10
DGUQU-4-F
4.0


11
APUQU-2-F
3.0


Σ

100.0










Physical properties














T(N, I) =
80.0°
C.










ne(20° C., 589 nm) =
1.5836



Δn(20° C., 589 nm) =
0.1004



ε(20°, 1 kHz) =
6.3



ε(20°, 1 kHz) =
3.7



Δε(20°, 1 kHz) =
2.6



εav.(20°, 1 kHz) =
4.6











γ1(20° C.) =
59
mPa · s



k11(20° C.) =
16.2
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
15.8
pN



V0(20° C.) =
2.63
V







Remark: t.b.d.: to be determined






Example 62

The following mixture (M-62) is prepared and investigated.












Mixture 62







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
46.0


2
CC-3-V1
8.0


3
PP-1-2V1
8.0


4
LB-3-T
4.0


5
LB(S)-3-OT
14.0


6
CLP-3-T
3.0


7
PGP-1-2V
3.0


8
PGP-2-2V
8.0


9
DGUQU-4-F
4.0


10
PGUQU-4-F
2.0


Σ

100.0










Physical properties














T(N, I) =
75.5°
C.










ne(20° C., 589 nm) =
1.6066



Δn(20° C., 589 nm) =
0.1188



ε(20°, 1 kHz) =
6.3



ε(20°, 1 kHz) =
3.8



Δε(20°, 1 kHz) =
2.6



εav.(20°, 1 kHz) =
4.6











γ1(20° C.) =
54
mPa · s



k11(20° C.) =
16.1
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
14.4
pN



V0(20° C.) =
2.64
V







Remark: t.b.d.: to be determined






Example 63

The following mixture (M-63) is prepared and investigated.












Mixture 63







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
45.5


2
CC-3-V1
8.0


3
CC-3-2V1
7.0


4
PP-1-2V1
2.0


5
LB-3-T
4.5


6
LB(S)-3-OT
14.0


7
CLP-3-T
3.0


8
CCP-V-1
5.0


9
PGP-2-2V
5.0


10
DGUQU-4-F
6.0


Σ

100.0










Physical properties














T(N, I) =
79.5°
C.










ne(20° C., 589 nm) =
1.5838



Δn(20° C., 589 nm) =
0.1011



ε(20°, 1 kHz) =
6.3



ε(20°, 1 kHz) =
3.7



Δε(20°, 1 kHz) =
2.6



εav.(20°, 1 kHz) =
4.6











γ1(20° C.) =
58
mPa · s



k11(20° C.) =
15.9
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
15.5
pN



V0(20° C.) =
2.63
V







Remark: t.b.d.: to be determined






Example 64

The following mixture (M-64) is prepared and investigated.












Mixture 64







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
46.5


2
CC-3-V1
8.0


3
PP-1-2V1
8.0


4
LB-3-T
3.0


5
LB(S)-3-OT
14.0


6
CLP-3-T
4.0


7
PGP-1-2V
3.0


8
PGP-2-2V
7.5


9
DGUQU-4-F
4.0


10
PGUQU-4-F
2.0


Σ

100.0










Physical properties














T(N, I) =
75.0°
C.










ne(20° C., 589 nm) =
1.6034



Δn(20° C., 589 nm) =
0.1162



ε(20°, 1 kHz) =
6.3



ε(20°, 1 kHz) =
3.6



Δε(20°, 1 kHz) =
2.6



εav.(20°, 1 kHz) =
4.5











γ1(20° C.) =
t.b.d.
mPa · s



k11(20° C.) =
16.1
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
14.7
pN



V0(20° C.) =
2.61
V







Remark: t.b.d.: to be determined






Example 65

The following mixture (M-65) is prepared and investigated.












Mixture 65







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
48.5


2
CC-3-V1
8.0


3
CC-3-2V1
5.0


4
LB-3-T
4.5


5
LB(S)-3-OT
14.0


6
CLP-3-T
3.0


7
CCP-V-1
4.5


8
PGP-2-2V
6.0


9
DGUQU-4-F
5.0


10
APUQU-2-F
1.5


Σ

100.0










Physical properties














T(N, I) =
80.0°
C.










ne(20° C., 589 nm) =
1.5818



Δn(20° C., 589 nm) =
0.0997



ε(20°, 1 kHz) =
6.3



ε(20°, 1 kHz) =
3.7



Δε(20°, 1 kHz) =
2.6



εav.(20°, 1 kHz) =
4.6











γ1(20° C.) =
55
mPa · s



k11(20° C.) =
15.5
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
15.0
pN



V0(20° C.) =
2.59
V







Remark: t.b.d.: to be determined






Example 66

The following mixture (M-66) is prepared and investigated.












Mixture 66







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
45.0


2
CC-3-V1
8.0


3
CC-3-2V1
7.5


4
PP-1-2V1
2.0


5
LB-3-T
5.0


6
LB(S)-3-OT
13.0


7
CLP-3-T
3.0


8
CCP-V-1
6.0


9
PGP-2-2V
4.0


10
DGUQU-4-F
5.0


11
APUQU-2-F
1.5


Σ

100.0










Physical properties














T(N, I) =
80.0°
C.










ne(20° C., 589 nm) =
1.5806



Δn(20° C., 589 nm) =
0.1006



ε(20°, 1 kHz) =
6.3



ε(20°, 1 kHz) =
3.7



Δε(20°, 1 kHz) =
2.6



εav.(20°, 1 kHz) =
4.6











γ1(20° C.) =
58
mPa · s



k11(20° C.) =
16.0
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
16.5
pN



V0(20° C.) =
2.62
V







Remark: t.b.d.: to be determined






Example 67

The following mixture (M-67) is prepared and investigated.












Mixture 67







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
46.0


2
CC-3-V1
7.5


3
PP-1-2V1
7.5


4
LB-3-T
3.0


5
LB(S)-3-OT
14.0


6
CLP-3-T
3.5


7
PUQU-3-F
1.5


8
PGP-1-2V
4.0


9
PGP-2-2V
8.5


10
DGUQU-4-F
4.5


Σ

100.0










Physical properties














T(N, I) =
75.0°
C.










ne(20° C., 589 nm) =
1.6073



Δn(20° C., 589 nm) =
0.1192



ε(20°, 1 kHz) =
6.3



ε(20°, 1 kHz) =
3.7



Δε(20°, 1 kHz) =
2.6



εav.(20°, 1 kHz) =
4.6











γ1(20° C.) =
t.b.d.
mPa · s



k11(20° C.) =
16.1
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
14.6
pN



V0(20° C.) =
2.62
V







Remark: t.b.d.: to be determined






Example 68

The following mixture (M-68) is prepared and investigated.












Mixture 68







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
47.5


2
CC-3-V1
7.0


3
PP-1-2V1
7.5


4
LB-3-T
3.0


5
LB(S)-3-OT
13.0


6
CLP-3-T
3.5


7
PGP-1-2V
4.0


8
PGP-2-2V
8.5


9
DGUQU-4-F
4.0


10
PGUQU-4-F
2.0


Σ

100.0










Physical properties














T(N, I) =
75.5°
C.










ne(20° C., 589 nm) =
1.6062



Δn(20° C., 589 nm) =
0.1182



ε(20°, 1 kHz) =
6.2



ε(20°, 1 kHz) =
3.6



Δε(20°, 1 kHz) =
2.6



εav.(20°, 1 kHz) =
4.5











γ1(20° C.) =
57
mPa · s



k11(20° C.) =
16.0
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
14.3
pN



V0(20° C.) =
2.62
V







Remark: t.b.d.: to be determined






Example 69

The following mixture (M-69) is prepared and investigated.












Mixture 69







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
48.5


2
CC-3-V1
7.0


3
CC-3-2V1
5.5


4
PP-1-2V1
2.5


5
LB-3-T
4.0


6
LB(S)-3-OT
14.0


7
CLP-V-1
4.5


8
CLP-1V-1
3.0


9
PGP-2-2V
3.0


10
DGUQU-4-F
5.0


11
APUQU-2-F
3.0


Σ

100.0










Physical properties














T(N, I) =
80.5°
C.










ne(20° C., 589 nm) =
1.5835



Δn(20° C., 589 nm) =
0.1004



ε(20°, 1 kHz) =
6.4



ε(20°, 1 kHz) =
3.7



Δε(20°, 1 kHz) =
2.7



εav.(20°, 1 kHz) =
4.6











γ1(20° C.) =
56
mPa · s



k11(20° C.) =
16.1
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
15.5
pN



V0(20° C.) =
2.59
V







Remark: t.b.d.: to be determined






Example 70

The following mixture (M-70) is prepared and investigated.












Mixture 70







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CCGU-3-F
2.2


2
CDUQU-3-F
9.0


3
CPGP-4-3
1.8


4
DGUQU-4-F
4.6


5
CCP-3-OT
4.0


6
CCP-V-1
5.2


7
CCP-V2-1
5.0


8
CCVC-3-V
6.0


9
PGP-1-2V
3.2


10
CC-3-2V1
9.0


11
CC-3-V
23.0


12
CC-3-V1
9.0


13
PP-1-2V1
2.0


14
LB(S)-3-OT
10.0


15
LB-4-T
3.0


16
LB-3-T
3.0


Σ

100.0










Physical properties














T(N, I) =
112.0°
C.










ne(20° C., 589 nm) =
1.5931



Δn(20° C., 589 nm) =
0.1106



ε(20°, 1 kHz) =
8.8



ε(20°, 1 kHz) =
4.0



Δε(20°, 1 kHz) =
4.8



εav.(20°, 1 kHz) =
5.6











γ1(20° C.) =
112
mPa · s



k11(20° C.) =
21.3
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
21.1
pN



V0(20° C.) =
2.22
V







Remark: t.b.d.: to be determined






Example 71

The following mixture (M-71) is prepared and investigated.












Mixture 71







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-2V1
3.0


2
CC-3-V
33.0


3
CC-3-V1
7.0


4
CCGU-3-F
3.0


5
CCP-3-OT
3.0


6
CCP-3-1
5.0


7
CCVC-3-V
4.0


8
CDUQU-3-F
8.0


9
CLP-3-T
5.0


10
CLP-V-1
5.0


11
DGUQU-4-F
4.0


12
LB(S)-3-OT
14.0


13
LB-3-T
6.0


Σ

100.0










Physical properties














T(N, I) =
104.0°
C.










ne(20° C., 589 nm) =
t.b.d.



Δn(20° C., 589 nm) =
t.b.d.



ε(20°, 1 kHz) =
t.b.d.



ε(20°, 1 kHz) =
t.b.d.



Δε(20°, 1 kHz) =
t.b.d.



εav.(20°, 1 kHz) =
t.b.d.











γ1(20° C.) =
t.b.d.
mPa · s



k11(20° C.) =
t.b.d.
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
t.b.d.
pN



V0(20° C.) =
t.b.d.
V





Remark: t.b.d.: to be determined






Example 72

The following mixture (M-72) is prepared and investigated.












Mixture 72







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
36.5


2
CC-3-V1
7.0


3
CC-3-2V1
3.0


4
CCP-3-1
8.0


5
CCVC-3-V
5.0


6
CCP-3-OT
2.0


7
CLP-V-1
5.0


8
CLP-3-T
4.0


9
CDUQU-3-F
8.0


10
DGUQU-2-F
1.5


11
DGUQU-4-F
4.0


12
CCGU-3-F
2.0


13
LB(S)-3-OT
10.0


14
LB-3-T
4.0


Σ

100.0










Physical properties














T(N, I) =
105.0°
C.










ne(20° C., 589 nm) =
t.b.d.



Δn(20° C., 589 nm) =
t.b.d.



ε(20°, 1 kHz) =
t.b.d.



ε(20°, 1 kHz) =
t.b.d.



Δε(20°, 1 kHz) =
t.b.d.



εav.(20°, 1 kHz) =
t.b.d.











γ1(20° C.) =
t.b.d.
mPa · s



k11(20° C.) =
t.b.d.
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
t.b.d.
pN



V0(20° C.) =
t.b.d.
V





Remark: t.b.d.: to be determined






Example 73

The following mixture (M-73) is prepared and investigated.












Mixture 73







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
25.5


2
CC-3-V1
8.0


3
CC-3-2V1
7.5


4
CCP-V-1
4.0


5
CCP-V2-1
4.5


6
CCVC-3-V
4.0


7
CCP-3-OT
5.0


8
CLP-V-1
1.0


9
CLP-3-T
3.5


10
CDUQU-3-F
8.0


11
DGUQU-2-F
1.5


12
DGUQU-4-F
4.0


13
CCGU-3-F
4.0


14
PP-1-2V1
1.5


15
LB(S)-3-OT
7.5


16
LB-3-T
3.5


17
CC-3-O3
7.0


Σ

100.0










Physical properties














T(N, I) =
101.0°
C.










ne(20° C., 589 nm) =
1.5712



Δn(20° C., 589 nm) =
0.0937



ε(20°, 1 kHz) =
9.0



ε(20°, 1 kHz) =
3.6



Δε(20°, 1 kHz) =
5.4



εav.(20°, 1 kHz) =
5.4











γ1(20° C.) =
95
mPa · s



k11(20° C.) =
19.4
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
19.7
pN



V0(20° C.) =
2.00
V





Remark: t.b.d.: to be determined






Example 74

The following mixture (M-74) is prepared and investigated.












Mixture 74







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
29.5


2
CC-3-V1
8.0


3
CC-3-2V1
8.5


4
CCP-V-1
8.0


5
CCP-V2-1
4.5


6
CCVC-3-V
4.0


7
CCP-3-OT
5.0


8
CLP-V-1
5.0


9
CLP-3-T
3.0


10
CDUQU-3-F
4.0


11
DGUQU-2-F
4.0


12
DGUQU-4-F
2.5


13
APUQU-3-F
2.5


14
PUQU-3-F
1.5


15
LB(S)-3-OT
6.0


16
LB-3-T
4.0


Σ

100.0










Physical properties














T(N, I) =
102.0°
C.










ne(20° C., 589 nm) =
1.5771



Δn(20° C., 589 nm) =
0.0959



ε(20°, 1 kHz) =
8.6



ε(20°, 1 kHz) =
3.5



Δε(20°, 1 kHz) =
5.2



εav.(20°, 1 kHz) =
5.2











γ1(20° C.) =
89
mPa · s



k11(20° C.) =
19.0
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
20.3
pN



V0(20° C.) =
2.02
V





Remark: t.b.d.: to be determined






Example 75

The following mixture (M-751 is prepared and investigated.












Mixture 75







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
24.5


2
CC-3-V1
8.0


3
CC-3-2V1
7.5


4
CCP-V-1
4.0


5
CCP-V2-1
4.5


6
CCVC-3-V
3.0


7
CCP-3-OT
4.5


8
CLP-V-1
3.5


9
CLP-3-T
2.5


10
CDUQU-3-F
8.0


11
DGUQU-2-F
1.5


12
DGUQU-4-F
4.0


13
CCGU-3-F
0.5


14
CCQU-3-F
3.0


15
PP-1-2V1
2.5


16
LB(S)-3-OT
6.5


17
LB-3-T
4.0


18
CC-3-O3
4.0


19
CCOC-3-3
2.0


20
CCOC-4-3
2.0


Σ

100.0










Physical properties














T(N, I) =
101.0°
C.










ne(20° C., 589 nm) =
1.5827



Δn(20° C., 589 nm) =
0.0941



ε(20°, 1 kHz) =
8.7



ε(20°, 1 kHz) =
3.6



Δε(20°, 1 kHz) =
5.1



εav.(20°, 1 kHz) =
5.3











γ1(20° C.) =
97
mPa · s



k11(20° C.) =
20.0
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
19.9
pN



V0(20° C.) =
2.09
V





Remark: t.b.d.: to be determined






Example 76

The following mixture (M-76) is prepared and investigated.












Mixture 76







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
49.0


2
CC-3-V1
7.5


3
LB(S)-3-OT
10.0


4
LB-3-T
10.0


5
CLP-V-1
7.0


6
CLP-3-T
3.0


7
APUQU-2-F
3.5


8
APUQU-3-F
4.0


9
PGUQU-3-F
2.5


10
PGUQU-4-F
3.0


11
PPGU-3-F
0.5


Σ

100.0










Physical properties














T(N, I) =
81.0°
C.










ne(20° C., 589 nm) =
1.5860



Δn(20° C., 589 nm) =
0.1043



ε(20°, 1 kHz) =
8.3



ε(20°, 1 kHz) =
4.2



Δε(20°, 1 kHz) =
4.1



εav.(20°, 1 kHz) =
5.6











γ1(20° C.) =
62
mPa · s



k11(20° C.) =
15.7
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
14.9
pN



V0(20° C.) =
2.07
V





Remark: t.b.d.: to be determined






Example 77

The following mixture (M-77) is prepared and investigated.












Mixture 77







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
50.0


2
CC-3-V1
8.0


3
LS(S)-3-OT
10.0


4
LS-3-T
6.0


5
PGP-2-2V
3.5


6
CLP-V-1
5.5


7
CLP-3-T
4.0


8
APUQU-2-F
4.0


9
DGUQU-4-F
3.0


10
PGUQU-3-F
2.0


11
PGUQU-4-F
3.5


12
PPGU-3-F
0.5


Σ

100.0










Physical properties














T(N, I) =
80.5°
C.










ne(20° C., 589 nm) =
1.5865



Δn(20° C., 589 nm) =
0.1040



ε(20°, 1 kHz) =
8.0



ε(20°, 1 kHz) =
3.8



Δε(20°, 1 kHz) =
4.2



εav.(20°, 1 kHz) =
5.2











γ1(20° C.) =
59
mPa · s



k11(20° C.) =
15.3
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
14.8
pN



V0(20° C.) =
2.02
V





Remark: t.b.d.: to be determined






Example 78

The following mixture (M-78) is prepared and investigated.












Mixture 78







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
50.0


2
CC-3-V1
8.0


3
LB(S)-3-OT
10.0


4
LB-3-T
4.0


5
PGP-2-2V
6.0


6
CLP-V-1
4.0


7
CLP-3-T
4.0


8
APUQU-2-F
4.0


9
DGUQU-4-F
4.0


10
CDUQU-3-F
2.0


11
PGUQU-4-F
3.5


12
PPGU-3-F
0.5


Σ

100.0










Physical properties














T(N, I) =
80.5°
C.










ne(20° C., 589 nm) =
1.5868



Δn(20° C., 589 nm) =
0.1044



ε(20°, 1 kHz) =
8.2



ε(20°, 1 kHz) =
3.7



Δε(20°, 1 kHz) =
4.5



εav.(20°, 1 kHz) =
5.2











γ1(20° C.) =
57
mPa · s



k11(20° C.) =
15.0
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
15.1
pN



V0(20° C.) =
1.92
V





Remark: t.b.d.: to be determined






Example 79

The following mixture (M-79) is prepared and investigated.












Mixture 79







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
50.5


2
CC-3-V1
8.0


3
LB(S)-3-OT
15.0


4
LB-3-T
3.5


5
CLP-V-1
3.0


6
PGP-2-2V
2.5


7
CLP-3-T
4.0


8
APUQU-2-F
4.0


9
DGUQU-4-F
3.0


10
PGUQU-3-F
2.5


11
PGUQU-4-F
3.5


12
PPGU-3-F
0.5


Σ

100.0










Physical properties














T(N, I) =
80.0°
C.










ne(20° C., 589 nm) =
1.5858



Δn(20° C., 589 nm) =
0.1042



ε(20°, 1 kHz) =
8.3



ε(20°, 1 kHz) =
3.9



Δε(20°, 1 kHz) =
4.4



εav.(20°, 1 kHz) =
5.4











γ1(20° C.) =
59
mPa · s



k11(20° C.) =
15.2
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
14.6
pN



V0(20° C.) =
1.96
V





Remark: t.b.d.: to be determined






Example 80

The following mixture (M-80) is prepared and investigated.












Mixture 80







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
41.5


2
CC-3-V1
4.0


3
LB(S)-3-OT
7.5


4
LB-3-T
4.0


5
CCP-V-1
10.5


6
PGP-1-2V
5.0


7
PGP-2-2V
7.0


8
PUQU-3-F
5.0


9
APUQU-2-F
4.0


10
PGUQU-3-F
4.0


11
PGUQU-4-F
4.0


12
PGUQU-5-F
3.0


13
PPGU-3-F
0.5


Σ

100.0










Physical properties














T(N, I) =
85.5°
C.










ne(20° C., 589 nm) =
1.6142



Δn(20° C., 589 nm) =
0.1251



ε(20°, 1 kHz) =
9.5



ε(20°, 1 kHz) =
3.8



Δε(20°, 1 kHz) =
5.8



εav.(20°, 1 kHz) =
5.7











γ1(20° C.) =
69
mPa · s



k11(20° C.) =
14.7
pN



k22(20° C.) =
t.b.d.
pN



k33(20° C.) =
14.9
pN



V0(20° C.) =
1.67
V





Remark: t.b.d.: to be determined






Example 81

The following mixture (M-81) is prepared and investigated.












Mixture 81







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
50.0


2
LB(S)-3-OT
10.0


3
LB-3-T
10.0


4
CCP-V-1
17.0


5
PP-1-2V1
4.0


6
CDUQU-3-F
4.5


7
PGUQU-3-F
4.0


8
PPGU-3-F
0.5


Σ

100.0










Physical properties














T(N, I) =
80.6°
C.










ne(20° C., 589 nm) =
1.5866



Δn(20° C., 589 nm) =
0.1015



ε(20°, 1 kHz) =
6.6



ε(20°, 1 kHz) =
4.0



Δε(20°, 1 kHz) =
2.6



εav.(20°, 1 kHz) =
4.9











γ1(20° C.) =
64
mPa · s



k11(20° C.) =
14.4
pN



k33(20° C.) =
15.2
pN



V0(20° C.) =
2.48
V









Example 82

The following mixture (M-82) is prepared and investigated.












Mixture 82







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
39.0


2
LB(S)-3-OT
8.0


3
LB-3-T
8.0


4
CY-3-O2
10.0


5
CY-5-O2
5.0


6
CPY-3-O2
5.0


7
CCP-V-1
7.0


8
CCVC-3-V
5.0


9
CDUQU-3-F
8.5


10
PGUQU-3-F
4.0


11
PPGU-3-F
0.5


Σ

100.0










Physical properties














T(N, I) =
79.4°
C.










ne(20° C., 589 nm) =
1.5799



Δn(20° C., 589 nm) =
0.0993



ε(20°, 1 kHz) =
8.1



ε(20°, 1 kHz) =
5.8



Δε(20°, 1 kHz) =
2.2



εav.(20°, 1 kHz) =
6.5











γ1(20° C.) =
85
mPa · s



k11(20° C.) =
13.1
pN



k33(20° C.) =
14.8
pN



V0(20° C.) =
2.57
V









Example 83

The following mixture (M-83) is prepared and investigated.












Mixture 83







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
39.5


2
LB(S)-3-OT
8.0


3
LB-3-T
8.0


4
CCP-V-1
17.0


5
CY-3-O2
12.0


6
CLY-3-O2
5.0


7
CDUQU-3-F
6.5


8
PGUQU-3-F
5.5


9
PPGU-3-F
0.5


Σ

100.0










Physical properties














T(N, I) =
79.5°
C.










ne(20° C., 589 nm) =
1.5838



Δn(20° C., 589 nm) =
0.1010



ε(20°, 1 kHz) =
7.9



ε(20°, 1 kHz) =
5.6



Δε(20°, 1 kHz) =
2.6



εav.(20°, 1 kHz) =
6.5











γ1(20° C.) =
82
mPa · s



k11(20° C.) =
13.4
pN



k33(20° C.) =
15.4
pN



V0(20° C.) =
2.51
V









Example 84

The following mixture (M-84) is prepared and investigated.












Mixture 84







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
38.5


2
LB(S)-3-OT
8.0


3
LB-3-T
8.0


4
B(S)-2O-O6
3.0


5
CCP-V-1
15.0


6
CY-3-O2
11.0


7
CCY-3-O2
3.0


8
CDUQU-3-F
9.5


9
PGUQU-3-F
3.5


10
PPGU-3-F
0.5


Σ

100.0










Physical properties














T(N, I) =
79.8°
C.










ne(20° C., 589 nm) =
1.5838



Δn(20° C., 589 nm) =
0.1010



ε(20°, 1 kHz) =
8.2



ε(20°, 1 kHz) =
5.8



Δε(20°, 1 kHz) =
2.4



εav.(20°, 1 kHz) =
6.6











γ1(20° C.) =
86
mPa · s



k11(20° C.) =
13.5
pN



k33(20° C.) =
15.5
pN



V0(20° C.) =
1.96
V









Example 85

The following mixture (M-85) is prepared and investigated.












Mixture 85







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
41.5


2
CC-3-V1
4.0


3
LB(S)-3-OT
6.0


4
LB-3-T
4.0


5
CCP-V-1
10.0


6
PGP-1-2V
5.0


7
PGP-2-2V
7.0


8
PGP-3-2V
2.0


9
PUQU-3-F
5.0


10
APUQU-3-F
4.0


11
PGUQU-3-F
4.0


12
PGUQU-4-F
4.0


13
PGUQU-5-F
4.0


14
PPGU-3-F
0.5


Σ

100.0










Physical properties














T(N, I) =
85.5°
C.










ne(20° C., 589 nm) =
1.6167



Δn(20° C., 589 nm) =
0.1269



ε(20°, 1 kHz) =
9.4



ε(20°, 1 kHz) =
3.7



Δε(20°, 1 kHz) =
5.8



εav.(20°, 1 kHz) =
5.6











γ1(20° C.) =
70
mPa · s



k11(20° C.) =
14.7
pN



k33(20° C.) =
14.8
pN



V0(20° C.) =
1.68
V









Example 86

The following mixture (M-86) is prepared and investigated.












Mixture 86







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
38.0


2
CC-3-V1
7.5


3
LB(S)-3-OT
5.0


4
LB-3-T
2.0


5
CCP-V-1
10.0


6
CLP-V-1
3.0


7
PP-1-2V1
2.0


8
PGP-1-2V
2.0


9
PGP-2-2V
6.5


10
PGP-3-2V
3.0


11
PGU-2-F
5.0


12
PGU-3-F
4.5


13
APUQU-2-F
4.5


14
APUQU-3-F
4.5


15
DGUQU-4-F
2.0


16
PPGU-3-F
0.5


Σ

100.0










Physical properties














T(N, I) =
85.0°
C.










ne(20° C., 589 nm) =
1.6159



Δn(20° C., 589 nm) =
0.1243



ε(20°, 1 kHz) =
8.8



ε(20°, 1 kHz) =
3.4



Δε(20°, 1 kHz) =
5.4



εav.(20°, 1 kHz) =
5.2











γ1(20° C.) =
65
mPa · s



k11(20° C.) =
15.7
pN



k33(20° C.) =
14.8
pN



V0(20° C.) =
1.80
V










Example 87

The following mixture (M-87) is prepared and investigated.












Mixture 87







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
50.0


2
LB(S)-3-OT
9.5


3
LB-3-T
7.0


4
CPY-3-O2
7.0


5
CCP-V-1
15.0


6
CCGU-3-F
2.0


7
PUQU-3-F
9.0


8
PPGU-3-F
0.5


Σ

100.0










Physical properties














T(N, I) =
79.5°
C.










ne(20° C., 589 nm) =
1.5839



Δn(20° C., 589 nm) =
0.1000



ε(20°, 1 kHz) =
6.6



ε(20°, 1 kHz) =
4.3



Δε(20°, 1 kHz) =
2.3



εav.(20°, 1 kHz) =
5.1











γ1(20° C.) =
60
mPa · s



k11(20° C.) =
13.6
pN



k33(20° C.) =
14.6
pN



V0(20° C.) =
2.55
V







Remark: t.b.d.: to be determined






Example 88

The following mixture (M-88) is prepared and investigated.












Mixture 88







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
49.5


2
LB(S)-3-OT
10.0


3
LB-3-T
6.5


4
CY-3-O4
5.0


5
CCY-3-O2
2.0


6
CCP-V-1
13.5


7
PGU-3-F
8.0


8
CCGU-3-F
2.0


9
PPGU-3-F
0.5


Σ

100.0










Physical properties














T(N, I) =
78.0°
C.










ne(20° C., 589 nm) =
1.5851



Δn(20° C., 589 nm) =
0.1003



ε(20°, 1 kHz) =
6.3



ε(20°, 1 kHz) =
4.3



Δε(20°, 1 kHz) =
2.1



εav.(20°, 1 kHz) =
5.0











γ1(20° C.) =
62
mPa · s



k11(20° C.) =
13.3
pN



k33(20° C.) =
14.3
pN



V0(20° C.) =
2.67
V










Example 89

The following mixture (M-89) is prepared and investigated.












Mixture 89







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
41.0


2
CC-3-V1
7.5


3
LB(S)-3-OT
6.0


4
LB-3-T
3.0


5
CCP-V-1
8.0


6
PGP-1-2V
6.5


7
PGP-2-2V
6.5


8
PGU-2-F
3.0


9
PGU-3-F
3.0


10
APUQU-2-F
4.0


11
APUQU-3-F
4.0


12
PGUQU-3-F
3.0


13
PGUQU-4-F
3.0


14
PGUQU-5-F
2.0


15
PPGU-3-F
0.5


Σ

100.0










Physical properties














T(N, I) =
85.5°
C.










ne(20° C., 589 nm) =
1.6161



Δn(20° C., 589 nm) =
0.1261



ε(20°, 1 kHz) =
9.5



ε(20°, 1 kHz) =
3.5



Δε(20°, 1 kHz) =
6.0



εav.(20°, 1 kHz) =
5.5











γ1(20° C.) =
67
mPa · s



k11(20° C.) =
15.0
pN



k33(20° C.) =
15.5
pN



V0(20° C.) =
1.66
V










Example 90

The following mixture (M-90) is prepared and investigated.












Mixture 90







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
41.0


2
CC-3-V1
7.5


3
LB(S)-3-OT
6.0


4
LB-3-T
3.0


5
CCP-V-1
8.0


6
PGP-1-2V
6.5


7
PGP-2-2V
6.5


8
PGU-2-F
3.0


9
PGU-3-F
3.0


10
APUQU-2-F
4.0


11
APUQU-3-F
4.0


12
PGUQU-3-F
3.0


13
PGUQU-4-F
3.0


14
PGUQU-5-F
2.0


15
PPGU-3-F
0.5


Σ

100.0










Physical properties














T(N, I) =
85.5°
C.










ne(20° C., 589 nm) =
1.6161



Δn(20° C., 589 nm) =
0.1261



ε(20°, 1 kHz) =
9.5



ε(20°, 1 kHz) =
3.5



Δε(20°, 1 kHz) =
6.0



εav.(20°, 1 kHz) =
5.5











γ1(20° C.) =
67
mPa · s



k11(20° C.) =
15.0
pN



k33(20° C.) =
15.5
pN



V0(20° C.) =
1.66
V










Example 91

The following mixture (M-91) is prepared and investigated.












Mixture 90







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
43.5


2
CC-3-V1
6.5


3
LB(S)-3-OT
6.0


4
LB-3-T
2.0


5
CCP-V-1
5.5


6
PP-1-2V1
1.5


7
PGP-1-2V
5.5


8
PGP-2-2V
6.0


9
PGP-3-2V
3.0


10
APUQU-2-F
4.5


11
APUQU-3-F
4.0


12
PGUQU-3-F
4.0


13
PGUQU-4-F
4.5


14
PGUQU-5-F
3.0


15
PPGU-3-F
0.5


Σ

100.0










Physical properties














T(N, I) =
85.5°
C.










ne(20° C., 589 nm) =
1.6147



Δn(20° C., 589 nm) =
0.1258



ε(20°, 1 kHz) =
9.3



ε(20°, 1 kHz) =
3.5



Δε(20°, 1 kHz) =
5.8



εav.(20°, 1 kHz) =
5.4











γ1(20° C.) =
67
mPa · s



k11(20° C.) =
15.0
pN



k33(20° C.) =
14.9
pN



V0(20° C.) =
1.68
V










Example 92

The following mixture (M-92) is prepared and investigated.












Mixture 92







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
30.0


2
CC-3-V1
8.0


3
CC-3-2V1
8.5


4
LB(S)-3-OT
5.0


5
LB-3-T
2.0


6
CCP-V-1
9.5


7
CLP-V-1
6.0


8
CCVC-3-V
4.0


9
CCP-3-OT
5.5


10
CLP-3-T
6.0


11
CCGU-3-F
2.5


12
CDUQU-3-F
7.5


13
DGUQU-2-F
1.5


14
DGUQU-4-F
4.0


Σ

100.0










Physical properties














T(N, I) =
105.5°
C.










ne(20° C., 589 nm) =
1.5728



Δn(20° C., 589 nm) =
0.0923



ε(20°, 1 kHz) =
8.5



ε(20°, 1 kHz) =
3.2



Δε(20°, 1 kHz) =
6.2



εav.(20°, 1 kHz) =
5.3











γ1(20° C.) =
94
mPa · s



k11(20° C.) =
19.8
pN



k33(20° C.) =
21.9
pN



V0(20° C.) =
2.04
V










Example 93

The following mixture (M-93) is prepared and investigated.












Mixture 93







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
42.5


2
CC-3-V1
6.0


3
LB(S)-3-OT
8.0


4
LB-3-T
3.0


5
CCP-V-1
6.0


6
PGP-1-2V
2.5


7
PGP-2-2V
10.0


8
PGU-2-F
2.0


9
PGU-3-F
2.0


10
APUQU-2-F
4.5


11
APUQU-3-F
4.5


12
PGUQU-3-F
2.5


13
PGUQU-4-F
4.0


14
PGUQU-5-F
2.0


15
PPGU-3-F
0.5


Σ

100.0










Physical properties














T(N, I) =
85.0°
C.










ne(20° C., 589 nm) =
1.6151



Δn(20° C., 589 nm) =
0.1260



ε(20°, 1 kHz) =
9.8



ε(20°, 1 kHz) =
3.7



Δε(20°, 1 kHz) =
6.1



εav.(20°, 1 kHz) =
5.7











γ1(20° C.) =
68
mPa · s



k11(20° C.) =
15.2
pN



k33(20° C.) =
14.4
pN



V0(20° C.) =
1.67
V










Example 94

The following mixture (M-94) is prepared and investigated.












Mixture 94







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
42.0


2
CC-3-V1
6.0


3
LB(S)-3-OT
10.0


4
LB-3-T
5.0


5
CCP-V-1
5.5


6
PGP-1-2V
3.0


7
PGP-2-2V
7.5


8
PGU-2-F
2.0


9
PGU-3-F
2.0


10
APUQU-2-F
4.5


11
APUQU-3-F
3.5


12
PGUQU-3-F
2.5


13
PGUQU-4-F
4.0


14
PGUQU-5-F
2.0


15
PPGU-3-F
0.5


Σ

100.0










Physical properties














T(N, I) =
85.0°
C.










ne(20° C., 589 nm) =
1.6150



Δn(20° C., 589 nm) =
0.1266



ε(20°, 1 kHz) =
9.9



ε(20°, 1 kHz) =
4.1



Δε(20°, 1 kHz) =
5.8



εav.(20°, 1 kHz) =
6.0











γ1(20° C.) =
68
mPa · s



k11(20° C.) =
15.6
pN



k33(20° C.) =
14.4
pN



V0(20° C.) =
1.71
V










Example 95

The following mixture (M-95) is prepared and investigated.












Mixture 95







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
42.5


2
CC-3-V1
6.0


3
LB(S)-3-OT
7.0


4
LB-3-T
3.0


5
CCP-V-1
6.5


6
PGP-1-2V
3.0


7
PGP-2-2V
7.0


8
PGP-3-2V
3.0


9
PGU-2-F
2.0


10
PGU-3-F
2.0


11
APUQU-2-F
4.5


12
APUQU-3-F
4.5


13
PGUQU-3-F
2.5


14
PGUQU-4-F
4.0


15
PGUQU-5-F
2.0


16
PPGU-3-F
0.5


Σ

100.0










Physical properties














T(N, I) =
85.5°
C.










ne(20° C., 589 nm) =
1.6144



Δn(20° C., 589 nm) =
0.1262



ε(20°, 1 kHz) =
9.8



ε(20°, 1 kHz) =
3.7



Δε(20°, 1 kHz) =
6.1



εav.(20°, 1 kHz) =
5.7











γ1(20° C.) =
68
mPa · s



k11(20° C.) =
15.1
pN



k33(20° C.) =
14.5
pN



V0(20° C.) =
1.66
V










Example 96

The following mixture (M-96) is prepared and investigated.












Mixture 96







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
40.0


2
CC-3-V1
8.0


3
LB(S)-3-OT
7.5


4
LB-3-T
3.0


5
CCP-V-1
6.0


6
PGP-1-2V
4.0


7
PGP-2-2V
7.5


8
PGP-3-2V
3.0


9
PUQU-3-F
4.5


10
APUQU-2-F
4.5


11
APUQU-3-F
4.0


12
PGUQU-3-F
2.5


13
PGUQU-4-F
3.0


14
PGUQU-5-F
2.0


15
PPGU-3-F
0.5


Σ

100.0










Physical properties














T(N, I) =
84.5°
C.










ne(20° C., 589 nm) =
1.6146



Δn(20° C., 589 nm) =
0.1257



ε(20°, 1 kHz) =
9.7



ε(20°, 1 kHz) =
3.7



Δε(20°, 1 kHz) =
6.6



εav.(20°, 1 kHz) =
5.9











γ1(20° C.) =
69
mPa · s



k11(20° C.) =
15.1
pN



k33(20° C.) =
14.8
pN



V0(20° C.) =
1.67
V










Example 97

The following mixture (M-97) is prepared and investigated.












Mixture 97







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
44.0


2
CC-3-V1
6.5


3
LB(S)-3-OT
6.0


4
LB-3-T
3.0


5
CCP-V-1
5.0


6
PP-1-2V1
1.0


7
PGP-1-2V
5.0


8
PGP-2-2V
6.0


9
PGP-3-2V
3.0


10
APUQU-2-F
4.5


11
APUQU-3-F
4.0


12
PGUQU-3-F
4.0


13
PGUQU-4-F
4.5


14
PGUQU-5-F
3.0


15
PPGU-3-F
0.5


Σ

100.0










Physical properties














T(N, I) =
85.0°
C.










ne(20° C., 589 nm) =
1.6135



Δn(20° C., 589 nm) =
0.1250



ε(20°, 1 kHz) =
9.4



ε(20°, 1 kHz) =
3.6



Δε(20°, 1 kHz) =
5.9



εav.(20°, 1 kHz) =
5.6











γ1(20° C.) =
68
mPa · s



k11(20° C.) =
15.0
pN



k33(20° C.) =
14.8
pN



V0(20° C.) =
1.68
V










Example 98

The following mixture (M-98) is prepared and investigated.












Mixture 98







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
45.0


2
CC-3-V1
5.0


3
LB(S)-3-OT
6.0


4
LB-3-T
2.0


5
CCP-V-1
6.0


6
PP-1-2V1
1.5


7
PGP-1-2V
5.0


8
PGP-2-2V
6.0


9
PGP-3-2V
3.0


10
APUQU-2-F
4.5


11
APUQU-3-F
4.0


12
PGUQU-3-F
4.0


13
PGUQU-4-F
4.5


14
PGUQU-5-F
3.0


15
PPGU-3-F
0.5


Σ

100.0










Physical properties














T(N, I) =
85.0°
C.










ne(20° C., 589 nm) =
1.6131



Δn(20° C., 589 nm) =
0.1244



ε(20°, 1 kHz) =
9.3



ε(20°, 1 kHz) =
3.5



Δε(20°, 1 kHz) =
5.8



εav.(20°, 1 kHz) =
5.4











γ1(20° C.) =
66
mPa · s



k11(20° C.) =
14.8
pN



k33(20° C.) =
14.9
pN



V0(20° C.) =
1.68
V










Example 99

The following mixture (M-99) is prepared and investigated.












Mixture 99







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
42.0


2
CC-3-V1
6.5


3
LB(S)-3-OT
6.0


4
LB-3-T
3.0


5
CCP-V-1
5.0


6
PP-1-2V1
1.0


7
PGP-1-2V
5.0


8
PGP-2-2V
6.0


9
PGP-3-2V
3.0


10
PUQU-3-F
2.0


11
APUQU-2-F
4.0


12
APUQU-3-F
4.0


13
PGUQU-3-F
4.0


14
PGUQU-4-F
3.0


15
PGUQU-5-F
3.0


16
PPGU-3-F
0.5


Σ

100.0










Physical properties














T(N, I) =
85.0°
C.










ne(20° C., 589 nm) =
1.6143



Δn(20° C., 589 nm) =
0.1256



ε(20°, 1 kHz) =
9.4



ε(20°, 1 kHz) =
3.6



Δε(20°, 1 kHz) =
5.8



εav.(20°, 1 kHz) =
5.5











γ1(20° C.) =
68
mPa · s



k11(20° C.) =
15.0
pN



k33(20° C.) =
15.1
pN



V0(20° C.) =
1.69
V










Example 100

The following mixture (M-100) is prepared and investigated.












Mixture 100







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
44.5


2
LB(S)-3-OT
9.5


3
LB-3-T
7.0


4
Y-4O-O4
3.5


5
CPY-3-O2
9.5


6
CCP-V-1
14.0


7
PUQU-3-F
3.0


8
CDUQU-3-F
8.5


9
PPGU-3-F
0.5


Σ

100.0










Physical properties














T(N, I) =
80.5°
C.










ne(20° C., 589 nm) =
1.5823



Δn(20° C., 589 nm) =
0.0999



ε(20°, 1 kHz) =
7.5



ε(20°, 1 kHz) =
5.2



Δε(20°, 1 kHz) =
2.4



εav.(20°, 1 kHz) =
6.0











γ1(20° C.) =
69
mPa · s



k11(20° C.) =
13.7
pN



k33(20° C.) =
14.8
pN



V0(20° C.) =
2.54
V










Example 101

The following mixture (M-101) is prepared and investigated.












Mixture 101







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
49.5


2
LB(S)-3-OT
10.0


3
LB-3-T
6.5


4
CPY-3-O2
7.0


5
CCP-V-1
14.0


6
CCGU-3-F
3.5


7
PUQU-3-F
10.0


8
PPGU-3-F
0.5


9




Σ

100.0










Physical properties














T(N, I) =
79.5°
C.










ne(20° C., 589 nm) =
1.5849



Δn(20° C., 589 nm) =
0.1012



ε(20°, 1 kHz) =
7.1



ε(20°, 1 kHz) =
4.3



Δε(20°, 1 kHz) =
2.8



εav.(20°, 1 kHz) =
5.2











γ1(20° C.) =
62
mPa · s



k11(20° C.) =
13.5
pN



k33(20° C.) =
14.7
pN



V0(20° C.) =
2.32
V










Example 102

The following mixture (M-102) is prepared and investigated.












Mixture 102







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
31.0


2
CC-3-V1
8.5


3
CC-3-2V1
10.0


4
LB(S)-3-OT
7.5


5
LB-3-T
3.5


6
CCP-V-1
5.0


7
CLP-V-1
4.0


8
CCVC-3-V
4.0


9
CCP-3-OT
5.0


10
CLP-3-T
8.0


11
CDUQU-3-F
8.5


12
DGUQU-2-F
1.5


13
DGUQU-4-F
4.0


Σ

100.0










Physical properties














T(N, I) =
100.0°
C.










ne(20° C., 589 nm) =
1.5714



Δn(20° C., 589 nm) =
0.0929



ε(20°, 1 kHz) =
8.7



ε(20°, 1 kHz) =
3.5



Δε(20°, 1 kHz) =
5.2



εav.(20°, 1 kHz) =
5.2











γ1(20° C.) =
90
mPa · s



k11(20° C.) =
20.0
pN



k33(20° C.) =
21.2
pN



V0(20° C.) =
2.07
V










Example 103

The following mixture (M-103) is prepared and investigated.












Mixture 103







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
41.5


2
CC-3-V1
4.0


3
LB(S)-3-OT
7.5


4
LB-3-T
4.0


5
CCP-V-1
10.5


6
PGP-1-2V
5.0


7
PGP-2-2V
7.0


8
PPGU-3-F
0.5


9
PUQU-3-F
5.0


10
APUQU-3-F
4.0


11
PGUQU-3-F
4.0


12
PGUQU-4-F
4.0


13
PGUQU-5-F
3.0


Σ

100.0










Physical properties














T(N, I) =
85.4°
C.










ne(20° C., 589 nm) =
1.6155



Δn(20° C., 589 nm) =
0.1251



ε(20°, 1 kHz) =
9.3



ε(20°, 1 kHz) =
3.7



Δε(20°, 1 kHz) =
5.6



εav.(20°, 1 kHz) =
5.6











γ1(20° C.) =
71
mPa · s



k11(20° C.) =
14.7
pN



k33(20° C.) =
14.8
pN



V0(20° C.) =
1.68
V










To 99.96% of this mixture (M-103) 0.04% of the compound of the formula ST




embedded image


with n=3 are addded and the resultant mixture is investigated. It has almost the same outstanding physical properties as the base mixture and is characterized by an excellent stability.


Example 104

The following mixture (M-104) is prepared and investigated.












Mixture 104







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
29.0


2
CC-3-V1
8.0


3
LB(S)-3-OT
5.5


4
LB-3-T
3.0


5
CCP-V-1
12.0


6
CCP-V2-1
5.0


7
CLP-V-1
5.0


8
CCVC-3-V
5.0


9
PP-1-2V1
5.0


10
PGP-1-2V
8.0


11
PGP-2-2V
0.5


12
PPGU-3-F
0.5


13
CDUQU-3-F
4.0


14
DGUQU-4-F
4.0


15
PGUQU-3-F
3.0


16
PGUQU-4-F
2.5


Σ

100.0










Physical properties














T(N, I) =
105.1°
C.










Δn(20° C., 589 nm) =
0.1204



Δε(20°, 1 kHz) =
4.2











γ1(20° C.) =
83
mPa · s



k11(20° C.) =
17.8
pN



k33(20° C.) =
18.5
pN



V0(20° C.) =
2.19
V










Example 105

The following mixture (M-105) is prepared and investigated.












Mixture 105







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
32.5


2
LB(S)-3-OT
3.0


3
LB-3-T
2.0


4
CCP-V-1
14.5


5
CCP-V2-1
12.0


6
CLP-V-1
5.0


7
CCVC-3-V
1.5


8
PP-1-2V1
5.0


9
PGP-1-2V
8.0


10
PPGU-3-F
0.5


11
CDUQU-3-F
7.0


12
PGUQU-3-F
3.0


13
PGUQU-4-F
3.0


14
PGUQU-5-F
3.0


Σ

100.0










Physical properties













T(N, I) =
105.5° C.







Remark: t.b.d.: to be determined






To 99.96% of this mixture (M-105) 0.04% of the compound of the formula ST with n=3 are addded and the resultant mixture is investigated. It has almost the same outstanding physical properties as the base mixture and is characterized by an excellent stability.


Example 106

The following mixture (M-106) is prepared and investigated.












Mixture 106







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
46.0


2
CC-3-V1
7.0


3
LB(S)-3-OT
6.0


4
LB-3-T
2.0


5
CCP-V-1
4.5


6
CLP-V-1
7.0


7
CCVC-3-V
2.0


8
CDUQU-3-F
3.5


9
APUQU-2-F
3.5


10
APUQU-3-F
6.0


11
PGUQU-3-F
5.0


12
PGUQU-4-F
4.5


13
PGUQU-5-F
3.0


Σ

100.0










Physical properties













T(N, I) =
86.0° C.







Remark: t.b.d.: to be determined






To 99.96% of this mixture (M-106) 0.04% of the compound of the formula ST with n=3 are addded and the resultant mixture is investigated. It has almost the same outstanding physical properties as the base mixture and is characterized by an excellent stability.


Example 107

The following mixture (M-107) is prepared and investigated.












Mixture 107







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
41.5


2
CC-3-V1
4.0


3
LB(S)-3-OT
7.5


4
LB-3-T
4.0


5
CCP-V-1
10.5


6
PGP-1-2V
5.0


7
PGP-2-2V
7.0


8
PPGU-3-F
0.5


9
PUQU-3-F
5.0


10
APUQU-3-F
4.0


11
PGUQU-3-F
4.0


12
PGUQU-4-F
4.0


13
PGUQU-5-F
4.0


Σ

100.0










Physical properties














T(N, I) =
85.4°
C.










Δn(20° C., 589 nm) =
0.1251



Δε(20°, 1 kHz) =
5.6











γ1(20° C.) =
71
mPa · s



k11(20° C.) =
14.7
pN



k33(20° C.) =
14.8
pN



V0(20° C.) =
1.68
V










To 99.96% of this mixture (M-107) 0.04% of the compound of the formula ST with n=3 are addded and the resultant mixture is investigated. It has almost the same outstanding physical properties as the base mixture and is characterized by an excellent stability.


Example 108

The following mixture (M-108) is prepared and investigated.












Mixture 108







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
34.0


2
LB(S)-3-OT
3.0


3
LB-3-T
2.0


4
CCP-V-1
12.0


5
CCP-V2-1
9.0


6
CLP-V-1
5.0


7
CCVC-3-V
5.0


8
PP-1-2V1
6.0


9
PGP-1-2V
8.5


10
PPGU-3-F
0.5


11
CDUQU-3-F
7.0


12
PGUQU-2-F
2.0


13
PGUQU-4-F
2.0


14
PGUQU-5-F
3.0


Σ

100.0










Physical properties














T(N, I) =
105.8°
C.










Δn(20° C., 589 nm) =
0.1199



Δε(20°, 1 kHz) =
4.2











γ1(20° C.) =
82
mPa · s



k11(20° C.) =
17.1
pN



k33(20° C.) =
17.4
pN



V0(20° C.) =
2.14
V










To 99.96% of this mixture (M-108) 0.04% of the compound of the formula ST with n=3 are addded and the resultant mixture is investigated. It has almost the same outstanding physical properties as the base mixture and is characterized by an excellent stability.


Example 109

The following mixture (M-109) is prepared and investigated.












Mixture 109







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
32.0


2
LB(S)-3-OT
5.0


3
LB-3-T
2.0


4
CCP-V-1
12.0


5
CCP-V2-1
9.0


6
CLP-V-1
6.0


7
CCVC-3-V
5.5


8
PGP-1-2V
8.0


9
PGP-2-2V
5.5


10
PPGU-3-F
0.5


11
PGUQU-3-F
3.0


12
PGUQU-4-F
3.0


13
PGUQU-4-F
1.0


Σ

100.0










Physical properties













T(N, I) =
105.9° C.










To 99.96% of this mixture (M-109) 0.04% of the compound of the formula ST with n=3 are addded and the resultant mixture is investigated. It has almost the same outstanding physical properties as the base mixture and is characterized by an excellent stability.


Example 110

The following mixture (M-110) is prepared and investigated.












Mixture 110







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
39.0


2
LB(S)-3-OT
6.0


3
LB-3-T
2.0


4
CCP-V-1
12.0


5
CCP-V2-1
1.0


6
CLP-V-1
5.0


7
CCVC-3-V
5.0


8
PGP-1-2V
7.0


9
PGP-2-2V
8.0


10
PPGU-3-F
0.5


11
APUQU-2-F
4.0


12
CDUQU-3-F
6.0


13
DGUQU-4-F
2.0


Σ

100.0










Physical properties













T(N, I) =
106.2° C.










To 99.96% of this mixture (M-110) 0.04% of the compound of the formula ST with n=3 are addded and the resultant mixture is investigated. It has almost the same outstanding physical properties as the base mixture and is characterized by an excellent stability.


Example 111

The following mixture (M-111) is prepared and investigated.












Mixture 111







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
46.5


2
CC-3-V1
7.0


3
LB(S)-3-OT
6.0


4
LB-3-T
3.0


5
CCP-V-1
4.0


6
CLP-V-1
7.0


7
CCVC-3-V
1.5


8
APUQU-2-F
7.0


9
APUQU-3-F
6.0


10
CDUQU-3-F
4.0


11
PGUQU-3-F
4.0


12
PGUQU-4-F
4.0


13
PGUQU-5-F
3.0


Σ

100.0










Physical properties













T(N, I) =
83.0° C.







Remark: t.b.d.: to be determined






To 99.96% of this mixture (M-111) 0.04% of the compound of the formula ST with n=3 are addded and the resultant mixture is investigated. It has almost the same outstanding physical properties as the base mixture and is characterized by an excellent stability.


Example 112

The following mixture (M-112) is prepared and investigated.












Mixture 112







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
34.5


2
CC-3-V1
6.0


3
LB(S)-3-OT
5.5


4
LB-3-T
3.0


5
CCY-4-O2
4.0


6
CCP-V-1
8.0


7
CLP-V-1
5.0


8
CCVC-3-V
5.0


9
PGP-1-2V
5.5


10
PGP-2-2V
8.0


11
PPGU-3-F
0.5


12
CDUQU-3-F
5.0


13
DGUQU-4-F
4.0


14
PGUQU-3-F
3.0


15
PGUQU-4-F
3.0


Σ

100.0










Physical properties













T(N, I) =
105.7° C.










To 99.96% of this mixture (M-112) 0.04% of the compound of the formula ST with n=3 are addded and the resultant mixture is investigated. It has almost the same outstanding physical properties as the base mixture and is characterized by an excellent stability.


Example 113

The following mixture (M-113) is prepared and investigated.












Mixture 113







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
33.5


2
LB(S)-3-OT
5.0


3
LB-3-T
3.0


4
CY-3-O4
4.0


5
CCP-V-1
12.0


6
CCP-V2-1
1.5


7
CLP-V-1
6.0


8
CCVC-3-V
5.0


9
PGP-1-2V
8.0


10
PGP-2-2V
5.5


11
PPGU-3-F
0.5


12
APUQU-3-F
5.0


13
CDUQU-3-F
6.0


14
DGUQU-4-F
3.0


15
PGUQU-4-F
2.5


Σ

100.0










Physical properties













T(N, I) =
106.0° C.










To 99.96% of this mixture (M-112) 0.04% of the compound of the formula ST with n=3 are addded and the resultant mixture is investigated. It has almost the same outstanding physical properties as the base mixture and is characterized by an excellent stability.


Example 114

The following mixture (M-114) is prepared and investigated.












Mixture 114







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
42.0


2
CC-3-V1
4.0


3
LB(S)-3-OT
7.0


4
LB-3-T
3.0


5
CCP-V-1
7.0


6
CLP-V-1
4.0


7
PGP-1-2V
4.0


8
PGP-2-2V
7.5


9
PPGU-3-F
0.5


10
PUQU-3-F
5.0


11
APUQU-3-F
4.0


12
PGUQU-3-F
4.0


13
PGUQU-4-F
4.0


14
PGUQU-5-F
4.0


Σ

100.0










Physical properties













T(N, I) =
85.0° C.







Remark: t.b.d.: to be determined






To 99.96% of this mixture (M-114) 0.04% of the compound of the formula ST with n=3 are addded and the resultant mixture is investigated. It has almost the same outstanding physical properties as the base mixture and is characterized by an excellent stability.


Example 115

The following mixture (M-115) is prepared and investigated.












Mixture 115







Composition










Compound
Concentration









No.
Abbreviation
/% by weight





1
CC-3-V
43.5


2
CC-3-V1
8.0


3
LB(S)-3-OT
7.0


4
LB-3-T
3.0


5
CCP-V-1
3.0


6
PP-1-2V1
5.5


7
PGP-1-2V
7.0


8
PGP-2-2V
8.0


9
PPGU-3-F
0.5


10
DPGU-4-F
3.0


11
APUQU-2-F
5.0


12
DGUQU-4-F
2.0


13
PGUQU-3-F
4.5


Σ

100.0










Physical properties













T(N, I) =
81.5° C.







Remark: t.b.d.: to be determined






To 99.96% of this mixture (M-115) 0.04% of the compound of the formula ST with n=3 are addded and the resultant mixture is investigated. It has almost the same outstanding physical properties as the base mixture and is characterized by an excellent stability.


The preceding examples can be repeated with similar success by substituting the generically or specifically described reactants and/or operating conditions of this invention for those used in the preceding examples.


Without further elaboration, it is believed that one skilled in the art can, using the preceding description, utilize the present invention to its fullest extent. The preceding preferred specific embodiments are, therefore, to be construed as merely illustrative, and not limitative of the remainder of the disclosure in any way whatsoever. From the description, one skilled in the art can easily ascertain the essential characteristics of this invention and, without departing from the spirit and scope thereof, can make various changes and modifications of the invention to adapt it to various usages and conditions.


The entire disclosure[s] of all applications, patents and publications, cited herein and of corresponding European Patent application No. EP 17193293.2, filed Sep. 26, 2017 and European Patent application No. 18185216.1 filed Jul. 24, 2018, are incorporated by reference herein.

Claims
  • 1. A liquid-crystalline medium comprising one or more compounds of formula B
  • 2. The medium according to claim 1, comprising one or more compounds of formula B, which are selected from the group consisting of compounds of formulae B-1 and B-2:
  • 3. The medium according to claim 1, comprising one or more compounds of formula S, which are selected from the group consisting of compounds of formulae S-1 and S-2:
  • 4. The medium according to claim 2, comprising one or more compounds of formula formulae S-1 and one or more compounds of formula S-2.
  • 5. The medium according claim 1, further comprising one or more compounds selected from the group consisting of compounds of formulae II and III:
  • 6. The liquid-crystalline medium according to claim 1, further comprising one or more compounds selected from the group consisting of formulae IV and V:
  • 7. The liquid-crystalline medium according to claim 6, further comprising one or more compounds selected from the group consisting of formulae VI to IX:
  • 8. The medium according to claim 1, further comprising one or more compounds of formula I
  • 9. The medium according to claim 1, wherein the total concentration of the compounds of formulae B and S in the medium as a whole is 1% or more to 61% or less.
  • 10. The medium according to claim 1, additionally comprising one or more chiral compounds.
  • 11. An electro-optical display or electro-optical component, comprising a liquid-crystalline medium according to claim 1.
  • 12. The display according to claim 11, which is based on the IPS- or FFS mode and optionallly comprises an active-matrix addressing device.
  • 13. The display according to claim 1, which is a mobile display or a TV display.
  • 14. A process for the preparation of a liquid-crystalline medium according to claim 1, comrprising mixing together one or more compounds of formula B with one or more compounds of formula S and optionally with one or more additional mesogenic compounds.
  • 15. The medium according to claim 1, further comprising one or more compounds of formula S0
  • 16. The medium according to claim 1, where the total content of all compounds of formulae B, S, S0 and I to IX, which are present, in the medium is 95% or more
  • 17. The medium according to claim 16, where the total content of all compounds of formulae B, S, S0 and I to IX, which are present, in the medium is 100%.
  • 18. The medium according to claim 1, which does not contain a compound that contains a cyano group.
Priority Claims (2)
Number Date Country Kind
17193293.2 Sep 2017 EP regional
18185216.1 Jul 2018 EP regional