The present invention relates to a liquid ejection head and a method of manufacturing the liquid ejection head.
In a liquid ejection head configured to eject a liquid, for example, ink, a volatile component in the liquid is evaporated, and the liquid in an ejection orifice is thickened in some cases. In particular, when the viscosity of the liquid increases significantly, the resistance of a fluid increases to cause an ejection failure of the liquid in some cases. As one of the countermeasures against such a liquid thickening phenomenon, there has been known a method involving flowing a fresh liquid, which has not been thickened, into the ejection orifice. As a method of flowing the liquid, there is given, for example, a method using a micro-pump as in alternating current electro-osmosis (ACEO) (International Publication No. WO2013/130039).
Meanwhile, in order to improve adhesiveness between a wiring and a flow path forming member, there has been known a technology of inserting an insulating adhesive layer (volume resistivity: 106 Ωcm or more) made of silicon oxide, silicon nitride, or the like between the wiring and the flow path forming member (for example, Japanese Patent Application Laid-Open No. 2007-261170).
According to one embodiment of the present invention, there is provided a liquid ejection head including: a substrate; an energy-generating element, which is arranged on the substrate, and is used for ejecting a liquid; a flow path forming member, which has an ejection orifice for ejecting the liquid, and is configured to form a flow path of the liquid between the flow path forming member and the substrate; an electrode configured to generate a flow of the liquid; and a wiring, which is arranged so as to be brought into contact with the flow path forming member, and is configured to supply electric power to the electrode, in which the flow path forming member contains an organic material, and in which the electrode and the wiring are each formed of a conductive adhesive layer containing at least one of conductive diamond-like carbon or tin-doped indium oxide.
According to one embodiment of the present invention, there is provided a method of manufacturing a liquid ejection head, the method including: forming a conductive adhesive layer on a substrate having an energy-generating element to be used for ejecting a liquid arranged thereon; patterning the conductive adhesive layer to form an electrode configured to generate a flow of the liquid and a wiring configured to supply electric power to the electrode; and forming a flow path forming member, which has an ejection orifice for ejecting the liquid and is configured to form a flow path of the liquid between the flow path forming member and the substrate, on the substrate so that the flow path forming member is brought into contact with the wiring, in which the flow path forming member contains an organic material, and in which the conductive adhesive layer contains at least one of conductive diamond-like carbon or tin-doped indium oxide.
According to one embodiment of the present invention, there is provided a method of manufacturing a liquid ejection head, the method including: forming a side wall portion of a flow path forming member configured to form a flow path of a liquid and a mold material of the flow path on a substrate having an energy-generating element to be used for ejecting the liquid arranged thereon; forming a conductive adhesive layer on the side wall portion and the mold material; patterning the conductive adhesive layer to form an electrode configured to generate a flow of the liquid and a wiring configured to supply electric power to the electrode; forming a ceiling portion of the flow path forming member having an ejection orifice for ejecting the liquid on the side wall portion, the mold material, the electrode, and the wiring; and removing the mold material to form the flow path, in which the side wall portion of the flow path forming member contains an organic material, and in which the conductive adhesive layer contains at least one of conductive diamond-like carbon or tin-doped indium oxide.
Further features of the present invention will become apparent from the following description of exemplary embodiments with reference to the attached drawings.
Preferred embodiments of the present invention will now be described in detail in accordance with the accompanying drawings.
In International Publication No. WO2013/130039, an electrode configured to generate a flow of a liquid is arranged on a substrate. In this configuration, wiring configured to supply electric power to the electrode is required. The electrode and a terminal for external connection are electrically connected to each other by drawing around the wiring on the substrate. However, when a flow path forming member, which has an ejection orifice of a liquid and is configured to form a flow path of the liquid, is formed on the substrate through use of an organic material, for example, a resin, there is a problem in that the adhesiveness between the wiring and the flow path forming member is low. In general, the wiring is made of a metal material. Therefore, when the wiring is exposed to a liquid, for example, ink for a long time period, peeling may occur at an interface between the wiring and the flow path forming member.
Meanwhile, in the case of a method described in Japanese Patent Application Laid-Open No. 2007-261170, the insulating adhesive layer is formed also on an electrode when the insulating adhesive layer is formed, and hence it is required to remove the insulating adhesive layer on the electrode by dry etching or other methods. This is because, in order to cause alternating current electro-osmosis, it is required to increase a charge accumulation amount to an electric double layer capacitor. Thus, in this technology, the number of manufacturing steps is increased, and the surface of the electrode is damaged by etching, with the result that the yield is decreased. Meanwhile, when the insulating adhesive layer on the electrode is not removed, the conductivity of the electrode is decreased.
An object of the present invention is to provide a liquid ejection head in which the conductivity of an electrode is high, and the adhesiveness between a wiring and a flow path forming member is high. Another object of the present invention is to provide a method of manufacturing a liquid ejection head capable of reducing the number of manufacturing steps and improving the adhesiveness between the wiring and the flow path forming member without damaging the surface of the electrode.
Liquid Ejection Head
A liquid ejection head according to the present invention includes a substrate, an energy-generating element, a flow path forming member, an electrode, and a wiring. The energy-generating element is arranged on the substrate and is used for ejecting a liquid. The flow path forming member has ejection orifices for ejecting the liquid and is configured to form a flow path of the liquid between the flow path forming member and the substrate. The electrode is configured to generate a flow of the liquid. The wiring is arranged so as to be brought into contact with the flow path forming member and configured to supply electric power to the electrode. In this case, the flow path forming member contains an organic material. Further, the electrode and the wiring are each formed of a conductive adhesive layer containing at least one of conductive diamond-like carbon (hereinafter sometimes referred to as “conductive DLC”) or tin-doped indium oxide (hereinafter sometimes referred to as “ITO”).
In the liquid ejection head according to the present invention, the electrode and the wiring are each formed of the conductive adhesive layer containing conductive DLC and/or ITO. In this case, conductive DLC and ITO have high conductivity and exhibit high adhesiveness with respect to the organic material. Therefore, the wiring in the liquid ejection head according to the present invention exhibits high adhesiveness with respect to the flow path forming member containing the organic material. Further, the electrode in the liquid ejection head according to the present invention has high conductivity.
Now, the liquid ejection head according to an embodiment of the present invention is described with reference to the drawings. In each of the embodiments described below, a specific configuration of an ink jet recording head configured to eject ink as a liquid according to one embodiment of the present invention is described, but the present invention is not limited thereto. The liquid ejection head according to the present invention is applicable to apparatus such as a printer, a copying machine, a facsimile apparatus including a communication system, and a word processor including a printer portion, and further to an industrial recording apparatus combined with various processing devices in a composite manner. For example, the liquid ejection head can be used also for biochip manufacturing and electronic circuit printing. Further, the embodiments described below are appropriate specific examples of the present invention, and hence technically preferred various limitations are provided. However, those embodiments are not limited to those described herein or other specific methods as long as the embodiments follow the concept of the present invention.
As illustrated in
A plurality of electrodes 9 that are brought into contact with ink are arranged on the substrate 1. The electrodes 9 are configured to generate a flow of ink in a direction of an arrow 8 by alternating current electro-osmosis. The electrodes 9 are electrically connected to terminals for external connection through a wiring 12 which is drawn around on the surface of the substrate 1 and is not brought into contact with ink. The electrodes 9 have two systems that are respectively connected to positive terminals and negative terminals of an AC power source. When ink is caused to flow by alternating current electro-osmosis, as illustrated in
In the ink jet recording head illustrated in
Diamond-like carbon (hereinafter sometimes referred to as “DLC”) refers to an amorphous material formed of hydrocarbon and an allotrope of carbon. DLC is varied in characteristics depending on the content of hydrogen and the ratio of contained electron trajectory (sp3 trajectory/sp2 trajectory). A layer made of general DLC is an insulating layer having a volume resistivity of from 106 Ωcm to 1012 Ωcm. However, when DLC is doped with elements such as boron, nitrogen, and nickel, the volume resistivity can be decreased to obtain conductive DLC. That is, conductive DLC can contain at least one kind of an element selected from the group consisting of boron, nitrogen, and nickel. As a method of forming a layer containing conductive DLC, there are given vapor deposition, chemical vapor deposition (CVD), sputtering, ion plating, ionized film deposition, and plasma ion implantation and film forming. The volume resistivity of a layer containing conductive DLC can be controlled by appropriately changing the conditions such as a substrate temperature and a gas flow rate during formation of a layer.
Meanwhile, ITO is a mixture of indium oxide and tin oxide. A layer made of ITO is transparent and has conductivity. Therefore, the film made of ITO is used in a touch panel, a liquid crystal display, and the like. The resistance and transparency of a layer to be obtained can be varied by changing the ratio between indium oxide and tin oxide. As a method of forming a layer containing ITO, physical vapor deposition (PVD) such as sputtering and vapor deposition is generally used. However, methods such as chemical vapor deposition (CVD) and application film forming using a sol-gel liquid can also be used. The volume resistivity of the layer containing ITO can be controlled by appropriately changing the conditions such as a substrate temperature and a gas flow rate during formation of a layer.
In the ink jet recording head according to this embodiment, at least one of the electrode 9 or the wiring 12 may be formed of a conductive adhesive layer as illustrated in
In the configuration illustrated in
Further, as illustrated in
When the conductive adhesive layer 11 contains conductive DLC, the volume resistivity of the conductive adhesive layer 11 is preferably 10 Ωcm or less. This is because, even in the configuration illustrated in
In the ink jet recording head according to this embodiment, as illustrated in
In the configuration illustrated in
Further, as illustrated in
Method of Manufacturing Liquid Ejection Head
A method of manufacturing a liquid ejection head according to a first embodiment of the present invention includes the following steps of: forming a conductive adhesive layer on a substrate having an energy-generating element to be used for ejecting a liquid arranged thereon; patterning the conductive adhesive layer to form an electrode configured to generate a flow of the liquid and a wiring configured to supply electric power to the electrode; and forming a flow path forming member, which has an ejection orifice for ejecting the liquid and is configured to form a flow path of the liquid between the flow path forming member and the substrate, on the substrate so that the flow path forming member is brought into contact with the wiring. In this case, the flow path forming member contains an organic material. Further, the conductive adhesive layer contains at least one of conductive DLC or ITO.
In the method according to the first embodiment, the conductive adhesive layer forming the electrode and the wiring can be formed at a time, and hence the number of manufacturing steps can be reduced. Further, the conductive adhesive layer has high conductivity. Therefore, even when the electrode has a low-resistance layer, and the conductive adhesive layer is formed on the low-resistance layer, it is not required to remove the conductive adhesive layer, and the surface of the electrode is not damaged. Further, the conductive adhesive layer exhibits high adhesiveness with respect to the flow path forming member containing the organic material, and hence high adhesiveness can be ensured at an interface between the wiring and the flow path forming member. It is preferred that the method according to the first embodiment further include, before forming the conductive adhesive layer, forming, on the substrate, a low-resistance layer having a volume resistivity lower than a volume resistivity of the conductive adhesive layer to be a part of the electrode and the wiring because a sufficient voltage can be applied from the wiring to the electrode. Now, one example of the first embodiment is described with reference to
Next, as illustrated in
Next, as illustrated in
Next, as illustrated in
In the method illustrated in
A method of manufacturing a liquid ejection head according to a second embodiment of the present invention includes the following steps of: forming a side wall portion of a flow path forming member configured to form a flow path of a liquid and a mold material of the flow path on a substrate having an energy-generating element to be used for ejecting the liquid arranged thereon; forming a conductive adhesive layer on the side wall portion and the mold material; patterning the conductive adhesive layer to form an electrode configured to generate a flow of the liquid and a wiring configured to supply electric power to the electrode; forming a ceiling portion of the flow path forming member having an ejection orifice for ejecting the liquid on the side wall portion, the mold material, the electrode, and the wiring; and removing the mold material to form the flow path. In this case, the side wall portion of the flow path forming member contains an organic material. Further, the conductive adhesive layer contains at least one of conductive DLC or ITO. The side wall portion of the flow path forming member refers to a portion for forming a side wall of the flow path in the flow path forming member.
When the electrode is arranged on the surface of the flow path forming member that is held in contact with the flow path, an interface between the wiring and the flow path forming member is present on two surfaces, that is, a front surface and a rear surface of the wiring, and hence the number of steps is significantly increased when an insulating adhesive layer is inserted into the interface. Meanwhile, in the method according to the second embodiment, the conductive adhesive layer forming the electrode and the wiring can be formed at a time. Therefore, even when the electrode is arranged on the surface of the flow path forming member that is held in contact with the flow path, an increase in number of manufacturing steps can be suppressed. Further, the conductive adhesive layer has high conductivity. Therefore, even when the electrode has a low-resistance layer, and the conductive adhesive layer is formed on the low-resistance layer, it is not required to remove the conductive adhesive layer, and the surface of the electrode is not damaged. Further, the conductive adhesive layer exhibits high adhesiveness with respect to the flow path forming member containing the organic material, and hence high adhesiveness can be ensured at the interface between the wiring and the flow path forming member.
In the method according to the second embodiment, a ceiling portion of the flow path forming member forming a ceiling part of the flow path can contain an organic material. In this case, it is preferred that the above-mentioned method further include: after forming the conductive adhesive layer and before forming the electrode and the wiring, forming, on the conductive adhesive layer, a low-resistance layer having a volume resistivity lower than a volume resistivity of the conductive adhesive layer to be a part of the electrode and the wiring; and forming again the conductive adhesive layer on the conductive adhesive layer and the low-resistance layer. This is because a sufficient voltage can be applied from the wiring to the electrode by forming the low-resistance layer. Now, one example of the second embodiment is described with reference to
Next, as illustrated in
Next, as illustrated in
Next, as illustrated in
In the method illustrated in
Further, in the method according to the second embodiment, the ceiling portion 4b of the flow path forming member can contain an inorganic material. In this case, it is preferred that the above-mentioned method further include, after forming the conductive adhesive layer and before forming the electrode and the wiring, forming, on the conductive adhesive layer, a low-resistance layer having a volume resistivity lower than a volume resistivity of the conductive adhesive layer to be a part of the electrode and the wiring. This is because a sufficient voltage can be applied from the wiring to the electrode by forming the low-resistance layer. Now, one example of the second embodiment is described with reference to
Next, as illustrated in
In the method illustrated in
Evaluation of Conductivity
Various layers were formed on a silicon wafer with a thermal oxide film, and a thickness and a resistance of each of the layers were measured with a contact type step profiler. A volume resistivity of each of the layers was calculated based on those two measured values.
Evaluation of Adhesiveness
A negative epoxy resin composition was spin-coated onto the silicon wafer with a thermal oxide film having various layers formed thereon manufactured in the evaluation of conductivity. The negative epoxy resin composition was exposed to light having a wavelength of 365 nm, developed, and baked. With this, a semicircular column having a height of 15 μm and a diameter φ of 100 μm, serving as a flow path forming member, was formed. An evaluation sample thus obtained was immersed in two kinds of inks (ink A and ink B) to measure a joint strength (shear strength) between the layer and the flow path forming member before and after immersion in the inks.
A solution obtained by mixing an appropriate amount of an organic solvent (2-pyrolidone, 1,2-hexanediol, polyethylene glycol, and acetylene) with water was used as the ink A. Further, ink sealed in an ink cartridge (product name: PGI-2300BK manufactured by Canon Inc.) was used as the ink B. Immersion into each ink was performed by sealing each ink and the evaluation sample into a pressure kiln to set a jar and performing a pressure cooker test at 120° C. for 10 hours. The semicircular column was measured for a shear strength under the conditions of a height of 1 μm and a scan speed of 6 μm/s. Measurement results of the shear strength are shown together in
ITO was formed as a film having a thickness of 200 nm on a silicon wafer with a thermal oxide film by magnetron sputtering, to thereby form a layer. The layer was evaluated for conductivity to find a volume resistivity of the layer of 1.0×10−3 Ωcm. Evaluation of adhesiveness was performed through use of the silicon wafer with a thermal oxide film having the layer formed thereon. A shear strength average value before immersion in ink was 31.1 g. Meanwhile, the shear strength after immersion in the ink A was 23.5 g, and the shear strength after immersion in the ink B was 20.4 g. In Example 1, there was no significant change in adhesiveness between the layer and the flow path forming member before and after immersion in ink, and a sufficient joint strength was maintained even after immersion in ink.
Boron-doped conductive DLC was formed as a film having a thickness of 150 nm by plasma ion implantation and film forming (through use of a device manufactured by Plasma Ion Asist Co., Ltd.) on a silicon wafer with a thermal oxide film, to thereby form a layer. The layer was evaluated for conductivity to find a volume resistivity of the layer of 1.5×10−2 Ωcm. Evaluation of adhesiveness was performed through use of the silicon wafer with a thermal oxide film having the layer formed thereon. A shear strength average value before immersion in ink was 26.4 g. Meanwhile, the shear strength after immersion in the ink A was 24.8 g, and the shear strength after immersion in the ink B was 25.2 g. In Example 2, there was no significant change in adhesiveness between the layer and the flow path forming member before and after immersion in ink, and a sufficient joint strength was maintained even after immersion in ink.
Gold (Au) was formed as a film having a thickness of 200 nm on a silicon wafer with a thermal oxide film by magnetron sputtering, to thereby form a layer. The layer was evaluated for conductivity to find a volume resistivity of the layer of 1.2×105 Ωcm. Evaluation of adhesiveness was performed through use of the silicon wafer with a thermal oxide film having the layer formed thereon. A shear strength average value before immersion in ink was 27.0 g. Meanwhile, the shear strength after immersion in the ink A was 0.7 g, and the shear strength after immersion in the ink B was 0 g (the shear strength was not able to be measured due to peeling).
Platinum (Pt) was formed as a film having a thickness of 100 nm on a silicon wafer with a thermal oxide film by magnetron sputtering, to thereby form a layer. The layer was evaluated for conductivity to find a volume resistivity of the layer of 2.0×10−5 Ωcm. Evaluation of adhesiveness was performed through use of the silicon wafer with a thermal oxide film having the layer formed thereon. A shear strength average value before immersion in ink was 24.0 g. Meanwhile, the shear strength after immersion in the ink A was 0.5 g, and the shear strength after immersion in the ink B was 0 g (the shear strength was not able to be measured due to peeling).
Nickel (Ni) was formed as a film having a thickness of 65 nm on a silicon wafer with a thermal oxide film by magnetron sputtering, to thereby form a layer. The layer was evaluated for conductivity to find a volume resistivity of the layer of 1.4×10−5 Ωcm. Evaluation of adhesiveness was performed through use of the silicon wafer with a thermal oxide film having the layer formed thereon. A shear strength average value before immersion in ink was 30.8 g. Meanwhile, the shear strength after immersion in the ink A was 20.1 g, and the shear strength after immersion in the ink B was 10.3 g.
An alloy of tungsten (W) and titanium (T) (Ti: 10% by mass) was formed as a film having a thickness of 100 nm on a silicon wafer with a thermal oxide film by magnetron sputtering, to thereby form a layer. The layer was evaluated for conductivity to find a volume resistivity of the layer of 1.5×105 Ωcm. Evaluation of adhesiveness was performed through use of the silicon wafer with a thermal oxide film having the layer formed thereon. A shear strength average value before immersion in ink was 29.6 g. Meanwhile, the shear strength after immersion in the ink A was 7.3 g, and the shear strength after immersion in the ink B was 0 g (the shear strength was not able to be measured due to peeling).
While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. The scope of the following claims is to be accorded the broadest interpretation so as to encompass all such modifications and equivalent structures and functions.
This application claims the benefit of Japanese Patent Application No. 2017-186667, filed Sep. 27, 2017, which is hereby incorporated by reference herein in its entirety.
Number | Date | Country | Kind |
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2017-186667 | Sep 2017 | JP | national |
Number | Name | Date | Kind |
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20070285469 | Sato | Dec 2007 | A1 |
20150053950 | Suematsu | Feb 2015 | A1 |
Number | Date | Country |
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2007-261170 | Oct 2007 | JP |
2013130039 | Sep 2013 | WO |
Number | Date | Country | |
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20190092007 A1 | Mar 2019 | US |