Houng, M. et al. Near-Room Temperature Growth of SiO2 Films for p-HgCdTe Passivation by Liquid Phase Deposition. Japanese Journal of Applied Physics. vol. 36, Part 2, No. 6A. pp. L696-L698, Jun. 1, 1997. |
Homma, T. et al. A New Interlayer Formation Technology for Completely Planarized Multilevel Interconnection by Using LPD. 1990 Symposium on VLSI Technology. pp. 3-4, Jun. 1990. |
Yeh, C. et al. Novel Technique for SiO2 Formed by Liquid Phase Deposition for Low Temperature Processed Polysilicon TFT. IEEE Electron Device Letters. vol. 14, No. 8. pp. 403-405, Aug. 1993. |
Chou, J. et al. The Initial Growth Mechanism of Silicon Oxide by Liquid-Phase Deposition. Journal Electrochemical Society. vol. 141, No. 11. pp. 3214-3217, Nov. 1994. |
Ghandi, S. VLSI Fabrication Principles. John Wiley & Sons, Inc. pp. 517-520, Jan. 1983. |
Janousek et al., "Photochemical oxidaton of (Hg, Cd)Te: Passivation processes and characteristics", J.Vac.Sci.Technol. A 3(1) p 195 (1985). |
Janousek et al., "Passivation properties and interfacial chemistry of photochemically deposited SiO.sub.2 on Hg.sub.0.7 Cd.sub.0.30 Te", J.Vac.Sci.Technol. A 1 p 7 (1994). |
Lin et al., "Passivation with SiO.sub.2 on HgCdTe by direct photochemical-vapor deposition", J.Vac.Sci.Technol. A12 p 7 (1994). |
Wagner et al., "Surface characterization of Hg.sub.0.7 Cd.sub.0.30 Te native oxides" J.Vac.Sci.Technol. A3 p 212 (1985). |
Wilson et al., "Electrical properties of the SiO.sub.2 :HgCdTe interface", J.Vac.Sci.Technol. A3, p 199 (1985). |