LONG WAVELENGTH INFRARED SENSOR MATERIALS AND METHOD OF SYNTHESIS THEREOF

Abstract

A dilute nitrogen alloy of InNxSb1-x epilayers strained to an epitaxial substrate useful for Long Wavelength Infrared (LWIR) Focal Plane Arrays, and method of fabricating. Strained materials of composition InNxSb1-x exhibiting increased Auger lifetimes and improved absorption properties.

Description

FIELD

The present invention relates to a method and process of making of a new class of long wavelength infrared sensor materials that are particularly useful in Long Wavelength Infrared (LWIR) Focal Plane Arrays. More specifically, this invention discloses strained materials of composition of InNxSb1-x that exhibit increased Auger lifetimes and improved absorption properties. Consequently, these materials are particularly well adapted to long-wavelength infrared devices that can operate at higher temperatures compared to existing devices, as well as other applications, such as but not limited to night vision, satellite military and civilian surveillance and infra-red imaging, intelligent manufacturing processing, medical imaging, and safety-related detection devices.

BACKGROUND

Infrared focal plane arrays operating in the 8-14 μm atmospheric window commonly referred to as long-wavelength IR (LWIR) detectors are a critical component in many of the military and civilian imaging systems. Since both quantum efficiency and detectivity depend upon the absorption and recombination lifetimes, an alternative to HgCdTe—like materials used in LWIR devices with stronger absorption coefficient and higher Auger recombination lifetimes is desirable as it allows the users to operate the device at higher temperatures.

Prior art teaches that a decrease in the band gap of Kane-like semiconductors generally yields to lower effective masses, hence affecting detrimentally both the absorption and Auger recombination coefficients.

It has been long known that small quantity of nitrogen in semiconductor materials like GaAs and GaP form a deep level impurity.¹ More recently, the unusual large band gap lowering observed in (In)GaAs1-xNx with low nitrogen fraction^2-6 has sparked a new interest in the development of dilute nitrogen containing III-V semiconductors for longwavelength optoelectronic devices such as near IR lasers, detector, and solar cells.^{3, 4-12} In spite of the decrease in the band gap, the conduction band effective mass has been predicted to rise with increasing nitrogen content, contrary to the expectation of usual k.p theory. The strong band gap bowing and increase in effective mass have been explained by a band anti-crossing model¹³ considering the interaction of the localized nitrogen states with the extended states of the conduction band. Within the context of Ga(In)AsN alloys, significant enhancements of electron effective masses have been evidenced experimentally and has been directly correlated to the increase in exciton binding energies^5,6 and to the absorption strength in both bulk like and low dimensional heterosuctures.^11,12,14,15

As for LWIR applications, the alloying of nitrogen (N) with InSb, a direct band gap III-V semiconductor material with a room temperature band gap of 0.17 eV (7.4 μm), has been ventured by several groups. A significant reduction of the bandgap with increasing N concentration has been experimentally evidenced for InNxSb1-x alloys and semi-metallic behavior has recently been reported¹⁶ for alloys containing ˜6% of nitrogen.

Theoretically, a band gap closure (Eg=0) has been predicted for bulk-like InN_xSb_1-x containing x˜2% of nitrogen.¹⁷ Hence, dilute nitride InN_xSb_1-x can be used for the far infrared detection devices for the wavelength regime of 7 μm and beyond. Higher effective masses in the dilute nitride III-V materials are expected to curb the Auger recombination in the device, hence increasing the sensitivity of the material as a detector.¹⁷ Proper design of an infrared detector operating at a given temperature requires a detailed knowledge of the properties of the constituent semiconductor material.

The present invention described herein overcomes some well know barriers to existing materials used in infrared detection equipment by providing a method and process to design and fabricate improved long-wavelength infrared sensor materials. More specifically, the present invention discloses the use of dilute nitride alloys of InN_xSb_1-x under biaxial tensile stress (i.e. pseudomorpically strained to InSb (001)) to significantly enhance the detectivity and the operation temperature of LWIR devices and to extract precise compositions necessary to realize such improvement. It also teaches the fabrication of epitaxial films with a method for the synthesis of the alloys.

SUMMARY

Conventional materials used in infrared detection equipment do not provide optimal detectivity or operation temperatures. The present invention comprises a long wavelength infrared sensor material with improved properties.

The present application discloses long wavelength infrared sensor material comprising a dilute nitrogen alloy of InN_xSb_1-x epilayers strained to an epitaxial substrate. In certain embodiments, the epitaxial substrate is InSb (100). In one embodiment, the dilute nitrogen alloy may have a nitrogen composition in the range of about 0.2% to 1.5%, and the Auger recombination lifetime of the alloy material is higher than the Auger recombination lifetime of HgCdTe with identical cut-off wavelength.

The present invention further discloses a method for fabricating a dilute nitrogen alloy of InN_xSb_1-x epilayers using molecular beam epitaxy.

The features and advantages of the present invention will be apparent to those skilled in the art. While numerous changes may be made by those skilled in the art, such changes are within the spirit of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1. Calculated electronic band structure of InNxSb1-x with 1% nitrogen using 10 bands k.p model.

FIG. 2. Variation of the conduction and valence (m_j=±½ and m_j=± 3/2) bands at k=0 for different nitrogen concentration in InN_xSb_1-x when strained to InSb (001) substrate. Band gap closure at nitrogen concentration of 1.5% can be noted.

FIG. 3. Cutoff wavelength of InN_xSb_1-x strained to InSb(001) substrate (solid curve) and unstrained InN_xSb_1-x (dashed curve extracted from reference 17) at 300K.

FIG. 4. Variation of the effective masses of carriers in conduction band due to the nitrogen and strain related effects.

FIG. 5. Absorption coefficients of InN_xSb_1-x for different nitrogen concentrations at 298K.

FIG. 6. Example of evolution of the absorption coefficient and the cut-off wavelength (bandgap) of biaxially strained InSb_0.99N₀₁ as a function of temperature.

FIG. 7. Schematic representation of CCCH Auger mechanism. The electron in state k_e1 for conduction band state) recombines to the hole in state k_h (H, for heavy-hole band state), and the energy in the process transfers the electron in the state k_e2 (C) to the state k_e3 (C), without the generation of photon.

FIG. 8. Auger recombination time for the intrinsic InN_xSb_1-x strained to InSb (001) at various nitrogen concentrations producing different cutoff wavelengths. Recombination involving conduction and heavy hole bands, and conduction and light hole bands at various temperatures are shown.

FIG. 9. Auger recombination time variation for InN_xSb_1-x (solid lines) where the nitrogen composition has been adjusted to yield cutoff wavelength of 12 μm (blue) and 15 μm (red). Comparison to Auger recombination lifetimes obtained in HgCdTe with similar cutoff wavelengths are shown (dashed lines). Higher Auger recombination lifetime is noted with tensilely InNxSb1-x compared to to HgCdTe of same band gap.

FIG. 10. Typical nitrogen plasma source spectra recorded during MBE growth, for a plasma power of 300 W and a nitrogen flow of lsccm. Arrows indicate the intensity of nitrogen lines used to measure N-atomic and molecular (N₂) species ratios.

FIG. 11. High resolution X-ray diffraction rocking curve recorded on a 0.5 micron thick InSb_1-xN_x (x˜0.4%) grown on InSb(001) at a growth rate of 0.8 microns per hour.

FIG. 12: (a) Evolution of the ratio of the line at 746 nm (corresponding to atomic nitrogen) and the line at 650 nm (corresponding to molecular nitrogen) in the plasma spectrum during growth. (b) Evolution of nitrogen composition in InSb1-xNx grown at 420° C. as a function of N plasma source power.

FIG. 13: Evolution of the substitutional nitrogen composition in InSb1-xNx as a function of growth temperature.

FIG. 14: AFM analysis of InNxSb1-x samples fabricated at different growth temperatures.

FIG. 15: Room temperature FTIR analysis for an InSb_1-xN_x (x˜0.01) epilayer on InSb (001) showing a strong absorption below InSb extending to the LWIR range.

FIG. 16: Evolution of absorption cutt-off wavelength as a function of nitrogen composition InSb_1-xN_x. Lines represent calculated data and symbols show experimental data.

DETAILED DESCRIPTION

The present invention relates to a method and process of making of a new class of long-wavelength infrared sensor materials that are particularly useful in Long Wavelength Infrared (LWIR) Focal Plane Arrays. More specifically, this invention discloses strained materials of composition of InN_xSb_1-x that exhibit increased Auger lifetimes and improved absorption properties. Consequently, these materials are particularly well adapted to long-wavelength infrared devices that can operate at higher temperatures compared to existing devices, as well as other applications, such as, but not limited to night vision, satellite military and civilian surveillance and infra-red imaging, intelligent manufacturing processing, medical imaging, and safety-related detection devices.

Part I: Improved Properties of Strained Dilute Nitrogen Alloys of Indium Antimonide for LWIR Applications

It should be noted that it is a common practice for InSb (001) substrates described in the embodiments of this invention to be intentionally (or accidentally) mis-oriented by several degrees toward another crystallographic direction (i.e. misoriented toward {110}, [111] . . . ). Such misorientation preserves the biaxial tensile nature of strain and the dominant physical behavior of a subsequently deposited InSb_1-xN_x and hence the present invention is also applicable to such configurations. Hereafter the denomination of InSb(001) substrates assumes also configurations where the substrate is misoriented by several degrees toward {110} or {111} families of crystallographic directions. Furthermore, the application of a biaxial tensile (or uniaxial compressive strain) to InSb_1-xN_x bulk-like or InSb_1-xN_x epilayers by common mechanical and/or heterepitaxial means for strain engineering, would also result in similar physical properties. It also should be noted that a partial substitution of In by small amount of Ga or/and Sb by small amounts of As could be adopted to further increase the strain magnitude and hence the conclusions drawn in this work are also applicable to these alloys. The embodiments of the invention disclosed herein thus are also applicable to all these configurations.

One embodiment of the present invention consists in theoretically assessing the use of dilute nitride alloys such as InN_xSb_1-x strained to InSb for LWIR (long-wavelength infrared) applications. The combined effects of 1) the lattice mismatch strain, 2) the presence of highly localized nitrogen states, and 3) the coupling of the conduction/valence bands are used to extract the electronic band structure, the optical absorption and the evolution of Auger recombination lifetimes as a function of temperature for InN_xSb_1-x/InSb(001). The sections that follow show that in fact an increase in Auger lifetime and absorption properties are observed for InN_xSb_1-x (compared to InSb) and also demonstrate the potential for significantly increasing the operating temperature of InN_xSb_1-x compared to the existing ones (such as Kane-like semiconductors like HgCdTe for example) over existing long-wavelength infrared devices.

I-1 Evolution of Biaxially Strained InN_xSb_1-x Bandgap

An embodiment of the present invention discloses a method to calculate the electronic band structure of InN_xSb_1-x with 1% nitrogen using 10 bands k.p model. InSb is a direct band semiconductor whose conduction band minimum and valance band maximum are located at k=0. Using the 10-band k.p model,¹⁸ which includes the localized nitrogen band interaction with the conduction band, and the coupling between valence and conduction band, the band structure of the InN_xSb_1-x is calculated as shown in FIG. 1.

Another embodiment of the present invention discloses the effect of nitrogen (N) concentration on the conduction and valence (m_j=±½ and m_j=+ 3/2) bands at k=0 in InN_xSb_1-x when strained to InSb (001) substrate. When strained to InSb (001) (a commonly used substrate for the epitaxial synthesis of these alloys), and because of the difference in the lattice constants relative to InSb, the InN_xSb_1-x (001) are subjected to a (001) biaxial tensile strain whose magnitude is proportional to the amount of substitutional nitrogen (Nitrogen in Sb site). Hereafter the nitrogen composition x in InN_xSb_1-x alloys refers to that of the substitutional nitrogen composition in the alloy. FIG. 2 shows the band edges of the conduction band and of the two valence bands at k=0 for different nitrogen (N) concentrations in InN_xSb_1-x when it is psudomorphically strained to InSb substrate. The band gap closure can be noted at the nitrogen concentrations of about 1.5%. This value is lower than the 2% of nitrogen concentration needed for the band gap closure for unstrained InN_xSb_1-x.¹⁷ A split of two valence subbands, (with m_j=±½ and m_j=± 3/2 spin momentums) can be noticed as InN_xSb_1-x is strained to InSb (001). This split increases as the nitrogen concentration increases due to the increased amount of strain.

Another embodiment of the present invention discloses the value of the cutoff wavelength of InNxSb1-x strained to InSb(001) substrate compared to that of the unstrained InNxSb1-x as a function of nitrogen concentration and at a temperature of 300K. FIG. 3 shows that room temperature cutoff wavelengths (λ_cutoff(μm)=1.2398/E_g(eV)) for InN_xSb_1-x strained to InSb (001) substrate and bulk-like unstrained InN_xSb_1-x of 25 μm can be achieved for nitrogen concentration of ˜1%.

I-2 Effective Mass Enhancement in InN_xSb_1-x

Another embodiment of the present invention discloses the effect of nitrogen concentration on the effective masses of carriers (in the conduction band) in InN_xSb_1-x. Carrier effective masses play an important role in many aspects of the device performance. It affects the absorption, recombination and transport of the carriers under different conditions. The incorporation of nitrogen in InSb increases the effective mass of the electrons given by the analytical formula derived from the band anti-crossing^{13, 14} as

$\begin{array}{cc}{m}^{*}=m_{m-v}\left[1+\frac{{\mathrm{yV}}_N^2}{{\left(E_N-E_{-}\right)}^2}\right]& \left(1\right)\end{array}$

where

E_(k)=½{E_N+E_III-v(k)+∉_xx−√{square root over ((E_N−E_III=V(k)−∉_xx)²+4yV_N2)}},  (2)

E_N is the energy of the localized nitrogen state, E_III-V(k) is the dispersion of the host crystal conduction band, V_N is the strength of the anti-crossing interaction between the N-localized states and the conduction band states of host matrix, ∉_xx is a biaxial strain and y is the nitrogen concentration. FIG. 4 shows the increase in the electron effective mass due to the nitrogen concentration and strain-related effects as nitrogen concentration increases. The effect of the increase in the effective masses on the optical and recombination properties of the material is discussed in following embodiments.

1-3 Long Wavelength Absorption Properties of InN_xSb_1-x

Another embodiment of the present invention discloses the optical absorption coefficient parameters for InN_xSb_1-x as a function of nitrogen concentration. The optical absorption coefficient is an important parameter for applications of such material in optical devices. Elliot-like formula¹⁹ has been used to find the absorption coefficients of the dilute nitride InSb bulk materials, which gives the total absorption due to both the bound and the continuum states in a bulk semiconductor as

$\begin{array}{cc}\alpha \left(\mathrm{\hslash \omega }\right)=\frac{A_0}{2{\pi }^2R_ya_0^3}\left[4\sum _{n=1}^{\infty }\frac{\frac{\Lambda }{n^3}}{\left(\Xi +\frac{1}{n^2}\right)+{\Lambda }^2}+\frac{\pi {}^{\frac{\pi }{\sqrt{\Xi }}}}{\sinh \left(\frac{\pi }{\sqrt{\Xi }}\right)}\right],\mathrm{where}\frac{\alpha \left(\mathrm{\hslash \omega }\right)-E_g}{R_y},A_0=\frac{\pi e^2{\hat{i}·p_{\mathrm{cv}}}^2}{n_rc{\varepsilon }_0m_0^2\omega },R_y=\frac{1}{{\left(4{\mathrm{\pi \varepsilon }}_s\right)}^2}\frac{{\mu }_re^4}{2{\hslash }^2},{\alpha }_0=\frac{4\pi {\mathrm{\varepsilon \hslash }}^2}{e^2{\mu }_r},{\mu }_r\mathrm{is}& \left(3\right)\end{array}$

the reduced effective mass of the holes and the electrons given as,

$\frac{1}{{\mu }_r}=\frac{1}{m_e}+\frac{1}{m_h};$

∉_s=K∉₀, and K is the dielectric constant, E_g is the band gap of the material, c is the speed of light, m₀ is the mass of an electron, e is an electronic charge, ω is angular frequency and pcv is a momentum matrix element between the conduction and valence bands. A higher carrier effective mass in the dilute nitrides suggests an increase in the absorption, and such effect is visible in FIG. 5. FIG. 5 shows the change in the absorption coefficient of InN_xSb_1-x at various nitrogen concentrations. An increase in the absorption, along with a decrease in the absorption-band-edge are noticed as the nitrogen concentration is increased.

Another embodiment of the present invention teaches that the absorption and cutoff wavelengths of devices or materials that are made with InN_xSb_1-x can be tuned by varying their operation temperature, and that such tuning can be achieved at any x (nitrogen concentration) value. FIG. 6 provides an example of the evolution of the absorption coefficient and cut-off wavelength for an InSb_0.99N_0.01 (N composition x˜0.01) as a function of the temperature.

I-4 Enhancement of Auger Recombination Lifetimes and Implications for Infrared Detection

Another embodiment of the present invention discloses the schematic representation of CCCH Auger mechanism in InSb-like semiconductors where the electron in state k_e1 (C, for conduction band state) recombines to the hole in state k_h (H, for heavy hole band state), and the energy in the process transfers the electron in the state k_e2 (C) to the state k_e3 (C), without the generation of photon. Electrons and holes in a semiconductor can recombine radiatively or nonradiativly. Non radiative mechanism mainly includes recombination at defects, surface recombination and Auger recombination. Auger recombination is a dominant non-radiative process in the low bandgap semiconductors or semiconductors with very high concentrations of free carriers, which otherwise could be ignored in high bandgap materials. The Auger recombination involves four particle states (for example, three electrons and one hole states, two electrons and two holes states, etc.) and includes three particle types, hence, scales as third power of the carrier density. In this process, the energy released during the electron-hole recombination is transferred to another electron (or hole), which gets excited to a higher energy state in the band. This electron or hole then relaxes back to achieve thermal equilibrium by losing its energy to lattice vibration (phonons). The band-to-band Auger recombination processes in InSb-like semiconductor can be classified in many photon-less mechanisms. Two of them have the smallest threshold energy, hence are most probable and are denoted by CCCH (or CCCL) and CHHL, where C stands for a state in the conduction band, a state H for heavy-hole valance band and L for a state light-hole valence band. In CCCH process, for example, an electron in conduction band (say, in state k_e1, as illustrated in FIG. 7) recombines with a hole in valence band (state k_h), and the energy gained is taken up by exciting another electron from the state k_e2 to k_e3. Hence, there is an involvement of three states in conduction band (CCC) and one state in the hole band (H). Same interpretation can be given to the other nomenclatures.

Another embodiment of the present invention discloses the effect of Auger recombination time on the cutoff wavelength and at various nitrogen concentrations for intrinsic InN_xSb_1-x strained to InSb and for InN_xSb_1-x tensilely strained to InSb(001).

Recombination involving conduction and heavy hole bands, and conduction and light hole bands at different temperatures is shown in FIG. 8. For InN_xSb_1-x tensilely strained on InSb (001), the light hole bands (spin momentum m_j move higher than the heavy hole bands, hence the threshold energy is smaller for the mechanisms CCCL involving the light hole bands in comparison to the mechanism CCCH. Since the spin-orbit-split-off band of InSb is almost four times larger than the band gap, the Auger mechanism involving the spin orbit split off band can be neglected reasonably. In this work we dwell with the Auger process CCCH for bulk-like unstrained InN_xSb_1-x and CCCL for InN_xSb_1-x strained to InSb (001). The expression for the Auger lifetime in the non-degenerate approximation for CCCH (or CCCL) process is given as²⁰

$\begin{array}{cc}{\tau }_{\mathrm{CCCH}\left(L\right)}=\frac{h^3{\varepsilon }_0^2}{\sqrt{8\pi }q^4m_0}\frac{{\varepsilon }^2\sqrt{\left(1+\mu \right)}\left(1+2\mu \right)}{\left(m_e/m_0\right){F_1F_2}^2{\left(\mathrm{kT}/E_g\right)}^{\frac{3}{2}}}{}^{\frac{\left(1+2\mu \right)E_g}{\left(1+\mu \right)\mathrm{KT}}}& \left(6\right)\end{array}$

where μ is the ratio of the conduction and heavy-hole band (or light hole band) effective masses, ∉ is the static frequency dielectric constant, |F₁F₂| is the overlap integral of the periodic part of the electron wave function, h is a Planck's constant, m₀ is the electron mass, m_e is the electron effective mass and E_g is the band gap.

When InN_xSb_1-x is tensilely strained on InSb(001), the light hole band moves up closer to the conduction band, hence the CCCL Auger mechanism may become predominant and is thus more important to consider for the device application based on InNxSb_1-x/InSb. FIG. 8 shows the variation of most probable band-to-band Auger mechanism CCCL and CCCH for the strained InN_xSb_1-x layers. Reduced transition time for the recombination through the channel CCCL can be noted in comparison to the channel CCCH. This is particularly advantageous for the tensilely strained material, for instance InN_xSb_1-x on InSb, due to the possibility of reducing the carrier loss through the nonradiative recombination. FIG. 8 also presents the calculated recombination lifetimes for different temperatures.

Another embodiment of the present invention discloses the effect of the temperature on the Auger recombination time in strained InN_xSb_1-x and compares it to its conventional counterpart, which is HgCdTe. The higher recombination time for the recombination through the CCCL mechanism should favor the use of devices at higher temperatures, in comparison to the devices where the recombination through the CCCH is prevalent. Hence materials based on tensilely strained InN_xSb_1-x are advantageous (over bulk-like InN_xSb_1-x and any Kane-like semiconductors) to use in devices as the increased Auger lifetime significantly reduces carrier recombination losses, which is an attribute critical to increasing the signal to noise ratio in photodetectors. At higher temperatures the Auger recombination lifetime decreases, which as mentioned earlier is a factor often limiting the operation temperature of IR devices. However the recombination lifetimes for similar wavelengths and temperatures appear to be much higher in InN_xSb_1-x that is tensilely strained on InSb(001) than those obtained in Kane-like semiconductors. A comparative example of the evolution of Auger lifetimes for a cutoff wavelength of 15 μm InN_xSb_1-x strained to InSb(001) and that of 15 μm HgCdTe, a material commonly used for MWIR and LWIR application, are presented in FIG. 9 showing the potential of InN_xSb_1-x to significantly increase the operation temperature of long wavelength infrared detectors. Similar behavior is also predicted for materials made of InN_xSb_1-x strained alloys with shorter and longer cutoff wavelengths.

I-5 Conclusions

Absorption and recombination properties of bulk-like and dilute nitride InN_xSb_1-x alloys and films pseudomorphically strained to InSb (100) have been investigated within the framework of a ten band k p theory. The lowering of the bandgap with increasing nitrogen concentration is accompanied by an unusual enhancement of electron effective masses that yields to significantly stronger absorption coefficients than those predicted for Kane-like semiconductors (i.e. HgCdTe). The enhancement of the absorption coefficient in materials made of InN_xSb_1-x strained on InSb is also accompanied by an increase of non-radiative recombination time due to both the combined effect of electron mass increase and the splitting of the valence band light and heavy hole states. In particular, the proximity of light holes (spin momentum m_j=±½) to the conduction band in tensilely strained InN_xSb_1-x causes the CCCL Auger process to prevail over the CCCH process (commonly observed in bulk-like semiconductors), leading to markedly larger recombination lifetimes (a desirable attribute). A study of the temperature dependence of the recombination lifetimes combined with absorption properties shows that dilute nitride InN_xSb_1-x alloys under biaxial tensile stress significantly outperform commonly used HgCdTe as well as bulk-like InN_xSb_1-x¹⁸ alloys in long-wavelength (8-20 μm) infrared detector applications. It should be noted that in practice one may use the principle of strain balancing i.e by alternating layers of the proposed tensilely strained InN_xSb_1-x with compressively strained layers of InBi_xSb_1-x or InN_xBi_ySb_1-x-y.

Part II: Method of Fabrication of Epitaxialy Strained Dilute Nitrogen Alloys of Indium Antimonide Films and Experimental Validation of Infrared Properties

It should be noted, as mentioned above, that it is a common practice for InSb (001) substrates described in the embodiments of the present invention to be intentionally (or accidentally) mis-oriented by several degrees toward another crystallographic direction (i.e misoriented toward {110}, [111], . . . ). Such misorientation preserves the biaxial tensile nature of strain and the dominant physical behavior of a subsequently deposited InN_xSb_1-x and hence the method of fabrication that is discussed hereafter is also applicable to such configurations and could be adapted by one skilled in the epitaxial art to fabricate the said biaxially strained films of InN_xSb_1-x on other common epitaxial substrates (i.e Si, Ge, sapphire, GaAs, InP, InAs, CdTe, GaSb).

Another embodiment of the present invention discloses a method and process for the fabrication of a new class of long wavelength infrared sensors materials that are particularly useful in homeland security and surveillance, military vision and guidance, satellite IR imaging, quantum imaging and cryptography, and pulsed power capacitors for medical use and medical LWIR imaging.

Another embodiment of the present invention discloses the high resolution X-ray diffraction rocking curves for InSb_1-xN_x grown on InSb(001). The growth of dilute nitrogen alloys of InSb epilayers is undertaken using nitrogen-plasma assisted molecular beam epitaxy (MBE) on (001) InSb substrates using a Riber MBE 32P system. An indium conventional effusion cell provides the In flux, while the Sb flux is generated by an Sb craker cell. Typical In and Sb fluxes are measured through the growth process using an ion gauge. The optimal ratio of Sb versus In flux is found to be optimal in the 1 to 2 range, or the 1.2 to 1.6 range. The In source temperature is adjusted to yield InSb growth rate of about 0.2 to 2 microns per hour, or 0.5 to 1.5 microns per hours, or 0.8-1 microns per hour. Nitrogen is introduced in the system using an rf-plasma epi™ source. Following the oxide desorption (−515-520° C.) the substrate temperature is lowered to about 420° C. and for all samples a thin (0.1-0.2 micron) InSb buffer is deposited with In and Sb flux ratio and growth rates as described above.

The growth of InN_xSb_1-x alloy is investigated as a function of growth temperature (350-450° C.), the nitrogen flow, and the plasma power conditions. The nitrogen plasma characteristics and their change are monitored by recording the plasma emission spectrum through a viewport installed at the back of the rf plasma source during nitrogen plasma flux stabilization and the growth of epilayers. The analysis experimental setup is similar to that previously reported in the literature.²¹ A typical nitrogen plasma spectra recorded during the growth of InN_xSb_1-x alloys on InSb(001) is illustrated in FIG. 10, and reveals the presence of both atomic and molecular nitrogen species.

The resulting nitrogen composition in the grown epilayers is extracted using high resolution X-ray diffraction. FIG. 11 depicts a typical XRD spectrum of a pseudomorphically strained InN_xSb_1-x film grown on InSb(001) at a substrate temperature of 420° C. and at a rate of 0.8 microns per hour, and with a In/Sb partial pressure ratio of 1.2, a plasma power of 300 W, and a flux of 0.5 sccm.

II-1 Effect of N-Plasma Power on N Incorporation in InN_xSb_1-x.

Another embodiment of the present invention discloses the effect of nitrogen plasma power on the incorporation of nitrogen in InSb and on the ration (R) of the spectrum line at 746 nm (corresponding to atomic nitrogen) over the spectrum line at 650 nm (corresponding to molecular nitrogen) in the plasma spectrum during growth. While the composition of nitrogen in InN_xSb_1-x is found to linearly increase with the nitrogen flux, the increase of N composition as a function of the nitrogen plasma source power (and ratio of atomic/molecular N species) is somewhat non-linear. FIG. 12 (a) shows the evolution of nitrogen atomic vs. molecular N species as a function of nitrogen plasma source power. The nitrogen composition in strained epilayers fabricated by MBE as a function of the plasma power is shown in FIG. 12(b).

II-2 Effect of Growth Temperature on N Incorporation in InN_xSb_1-x and Surface Characteristics.

Another embodiment of the present invention discloses the effect of substrate growth temperature on the substitutional nitrogen concentration in InN_xSb_1-x. To evaluate the effect of substrate growth temperature on the nitrogen incorporation, a set of InN_xSb_1-x epilayers are deposited using identical growth parameters at temperatures ranging from 380 to 450° C. In other embodiments, substrate growth temperature ranges from 400° C. to 440° C., or 410° C. to 430° C. All samples exhibit a two dimensional RHEED attesting of the high quality of the fabricated samples. FIG. 13 shows that an increase in the substrate growth temperature leads to a decrease in the amount of nitrogen that is being incorporated in InSb.

Under optimal growth conditions, InN_xSb_1-x growth yielded a 2D (2×1) RHEED diagram. Samples with InN_xSb_1-x thickness ranging from 0.2 to 1 micron and a nitrogen composition in the alloys ranging from 0.2 to 1.5% are fabricated. X-ray diffraction analysis indicated that a good control of the substitutional nitrogen composition is achieved. The surface morphology of the fabricated samples is investigated by atomic force microscopy (AFM). AFM analysis suggested that optimal growth temperature is obtained for samples grown at 400-420° C. temperature range, with a plasma power lower than 400 W. In other embodiments, the nitrogen plasma source power is in the 150 W-600 W range, or the 200 W-400 W range, or the 250 W-350 W range. FIG. 14 shows the evolution of the surface morphology as a function of growth temperature. The results indicate that an improved morphology (reduced surface roughness) is obtained for samples fabricated at ˜420° C., and that a degradation of morphology is observed for samples grown at higher temperatures, that is at about 450° C.

II-3 Absorption Properties and evolution of cut-off wavelengths.

Another embodiment of the present invention discloses the absorption properties of an InN_xSb_1-x epilayer on InSb at room temperature. FIG. 15 shows the corresponding Fourier transform infrared-red spectroscopy (FTIR) analysis that reveals a strong absorption below InSb extending to the LWIR range.

Another embodiment of the present invention discloses the values of the cut-off wavelength as a function of nitrogen concentration in InSb. FIG. 16 shows experimental data (symbols) and calculated data (line). The evolution of the absorption thresholds (as extracted from FTIR analysis) as a function of the nitrogen substitutional N-composition (as extracted from X-ray analysis) is found to be in good agreement with previous band anti-crossing 10 band k.p calculations described above, showing the possibility for the MBE synthesis of epitaxially strained InN_xSb_1-x layers with cutoff wavelengths in the much sought-after 8-14 micron LWIR range.

II-4 Section 2 Conclusion

The development of InN_xSb_1-x pseudmorphically strained epilayers on InSb (100) substrates by rf-plasma assisted molecular beam epitaxy technique is investigated and a methodology to obtain high quality epilayers is identified. Analysis of the cut-off wavelength by FTIR demonstrates their suitability for LWIR applications and the experimental data validates the theoretical projections and methodology presented in Part I above.

While the invention described here specifically focuses on a novel method, synthesis and process for the fabrication of a new class of materials that are particularly well adapted to long wavelength infrared devices, one of ordinary skills in the art, with the benefit of this disclosure, would recognize the extension of the approach to other material systems.

The present invention is well adapted to attain the ends and advantages mentioned as well as those that are inherent therein. The particular embodiments disclosed above are illustrative only, as the present invention may be modified and practiced in different but equivalent manners apparent to those skilled in the art having the benefit of the teachings herein. Furthermore, no limitations are intended to the details of construction or design herein shown, other than as described in the claims below. It is therefore evident that the particular illustrative embodiments disclosed above may be altered or modified and all such variations are considered within the scope and spirit of the present invention. Also, the terms in the claims have their plain, ordinary meaning unless otherwise explicitly and clearly defined by the patentee.

REFERENCES CITED

The following references, to the extent that they provide exemplary procedural or other details supplementary to those set forth herein, are specifically incorporated herein by reference.

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Claims

1. A long wavelength infrared sensor material comprising: a dilute nitrogen alloy of InNxSb1-x epilayers strained to an epitaxial substrate.

2. The long wavelength infrared sensor material of claim 1, wherein the epitaxial substrate is InSb, Si, Ge, sapphire, GaAs, InP, InAs, CdTe, or GaSb.

3. The long wavelength infrared sensor material of claim 1, wherein the epitaxial substrate is InSb (100).

4. The long wavelength infrared sensor material of claim 1, wherein the nitrogen composition in the alloy is in the range of about 0.1% to 2%.

5. The long wavelength infrared sensor material of claim 1, wherein the nitrogen composition in the alloy is in the range of about 0.2% to 1.5%.

6. The long wavelength infrared sensor material of claim 1, wherein the near band-edge absorption coefficient of the material is stronger than the absorption coefficient of HgCdTe with identical bandgap.

7. The long wavelength infrared sensor material of claim 1, wherein the Auger recombination lifetime of the material is higher than the Auger recombination lifetime of HgCdTe with identical bandgap.

8. The long wavelength infrared sensor material of claim 1, wherein the Sb atoms have been partially substituted by As.

9. The long wavelength infrared sensor material of claim 1, wherein the Sb atoms have been partially substituted by Bi.

10. The long wavelength infrared sensor material of claim 1, wherein the In atoms have been partially substituted by Ga.

11. A method of fabricating a long wavelength infrared sensor material, comprising the steps of: a) providing an epitaxial substrate;b) heating the epitaxial substrate;c) providing an In flux from an In effusion cell;d) providing an Sb2 flux from an Sb cell;e) providing plasma-activated nitrogen species; andf) directing the In flux and the Sb flux in the presence of nitrogen species toward the epitaxial substrate to form InNxSb1-x epilayers.

12. The method of claim 7, wherein the epitaxial substrate is InSb, Si, Ge, sapphire, GaAs, InP, InAs, CdTe, or GaSb.

13. The method of claim 7, wherein the substrate is InSb (001).

14. The method of claim 7, wherein the substrate temperature is adjusted to a temperature in the range of about 350° C. to 450° C.

15. The method of claim 7, wherein the substrate temperature is adjusted to a temperature in the range of about 400° C. to 440° C.

16. The method of claim 7, wherein the substrate temperature is adjusted to a temperature in the range of about 410° C. to 430° C.

17. The method of claim 7, wherein the ratio of the In flux to the Sb flux is adjusted to be in the range of about 1 to 2.

18. The method of claim 7, wherein the ratio of the In flux to the Sb flux is adjusted to be in the range of about 1.2 to 1.6.

19. The method of claim 7, wherein the nitrogen plasma source power is in the 150-600 W range.

20. The method of claim 7, wherein the nitrogen plasma source power is in the 200-400 W range.

21. The method of claim 7, wherein the ni rogen plasma source power is in the 250-350 W range.

22. The method of claim 7, wherein the nitrogen flux is adjusted to yield the desired nitrogen composition in the epitaxial layers of InNxSb1-x.

23. The method of claim 7, wherein the In cell temperature is adjusted to yield growth rate of InNxSb1-x epilayers in the range of about 0.2-2 microns per hour.

24. The method of claim 7, wherein the In cell temperature is adjusted to yield growth rate of InNxSb1-x epilayers in the range of about 0.5-1.5 microns per hour.

25. The method of claim 7, wherein the In cell temperature is adjusted to yield growth rate of InNxSb1-x epilayers in the range of about 0.8-1.1 microns per hour.