TREA

Long wavelength VCSEL with tunnel junction, and implant

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Information

  • Patent Grant
  • 6813293
  • Patent Number
    6,813,293
  • Date Filed
    Thursday, November 21, 2002
    22 years ago
  • Date Issued
    Tuesday, November 2, 2004
    20 years ago
Information
Abstract
A vertical cavity emitting laser (VCSEL) having a tunnel junction. The junction may be isolated with an implant into a top mirror and past the junction and p-layer. A trench around the VCSEL may result in reduced capacitance and more D.C. isolation of the junction. The implant may occur after the trench is made. Some implant may pass the trench to a bottom mirror. Additional isolation and current confinement may be provided with lateral oxidation of a layer below the junction. Internal trenches may be made from the top of the VCSEL vertically to an oxidizable layer below the junction. For further isolation, an open trench may be placed around a bonding pad and its bridge to the VCSEL and internal vertical trenches may be placed on the pad and its bridge down to the oxidizable layer.
Description




BACKGROUND




The present invention pertains to vertical cavity surface emitting lasers (VCSELs) and particularly to tunnel junction VCSELs having long wavelengths, namely, 1200 to 1800 nanometer wavelengths.




A long wavelength VCSEL having a tunnel junction and a thick mirror layer is difficult to isolate because of the high doping used in the tunnel junction. Island isolation or trenches can provide direct current (D.C.) isolation for such VCSELs. To reduce capacitance of the VCSEL an implant needs to be used; however, it will not adequately compensate the tunnel junction. Because the implant can go deeper than the tunnel junction into the p region and down to the active region it can form an insulating region under the tunnel junction which reduces the capacitance. Some VCSEL isolation is shown in U.S. Pat. No. 5,903,588. U.S. Pat. No. 5,903,588 issued May 11, 1999, and entitled “Laser with a Selectively Changed Current Confining Layer,” is expressly incorporated herein by reference into this description.




SUMMARY




An isolation implant used for isolation of a VCSEL should go through and past the tunnel junction of the VCSEL into and optimally through the p layer. This implant results in a semi-insulating region that reduces capacitance under the tunnel junction. Internal trenches about the VCSEL aperture can be utilized to reduce a required oxidation distance and thus reduce variability of the aperture diameter.











BRIEF DESCRIPTION OF THE DRAWINGS





FIG. 1

shows a cross-section of a VCSEL having tunnel junction, with implant and island or trench isolation;





FIG. 2

shows a cross-section of another configuration of a tunnel junction VCSEL;





FIG. 3



a


reveals a layout having a trench around a VCSEL including a bond pad and its connecting bridge to the VCSEL;





FIG. 3



b


shows a bond pad having several bridges connecting it to the VCSEL.





FIG. 4



a


reveals interior trenches on the VCSEL device for reducing a required oxidation distance;





FIG. 4



b


shows a cross-section of several interior trenches on the VCSEL device; and





FIG. 5

shows a bonding pad and the connecting bridge to a VCSEL also having interior oxidation trenches.











DESCRIPTION




The Figures are for illustrative purposes and not necessarily drawn to scale.

FIG. 1

shows a manufacturable structure of a VCSEL having deep implant isolation. A VCSEL that emits light having a 1200 to 1800 nanometer (nm) wavelength is described, though the same structures and techniques adjusted for the wavelength are advantageous for other wavelength VCSELs such as 850 nm, 980 nm or 660 nm VCSELs. On a substrate


36


a distributed Bragg reflector N-mirror


11


is situated. Mirror


11


may be composed of 30 to 50 pairs of layers. Each layer of the pair is about one-fourth of the optical design wavelength (λ) of light to be emitted by the VCSEL. Each pair of layers may be InGaAsP and InP, AlGaAsSb and InP, or AlGaPSb and InP, respectively, for a 1550 nm InP VCSEL. These layers are lattice matched to InP and may or may not be fully N-doped. They may be partially doped for the intra-cavity type of device. An active region


12


having InAlGaAs strained quantum wells and InAlAs barriers, also of a strained composition, is on mirror


11


. Active region


12


is not doped or is unintentionally doped. An oxidizable layer(s) or region


13


is on active region


12


. Layer(s)


13


has InAlAs material. The composition of layer


13


may be high in Al content and thus easily oxidizable. Another kind of oxidizable material may be present in layer


13


. Lateral oxidation regions


23


are made and extend to the periphery of the inside aperture of current confinement. The material of region


13


may or may not be lattice matched. Region


13


is P-doped. A tunnel junction


14


may be on region


13


. This junction


14


has a highly doped P material adjacent (˜1e20/cm3) to a highly doped N material (˜3e19/cm3) that results in the junction. The materials may include InAlGaAs and InP. Another distributed Bragg reflector N-mirror


15


is on tunnel junction


14


. It may have about 35 pairs of layers of InGaAsP and InP, InAlGaAs and InP or InAlGaAs and InAlAs. These layers of mirror


15


may be lattice material to InP.




A 1310 nm VCSEL


10


may be a GaAs substrate based device. On an appropriate substrate


36


may be an N mirror


11


having from 25 to 40 pairs of layers of AlGaAs and GaAs or AlAs and GaAs, respectively. These materials are lattice matched and may or may not be fully N-doped. They may be partially doped for the intra-cavity type of device. On mirror


11


is an active region


12


having quantum wells and barriers. There may be one to five quantum wells. There may be included in active region


12


a spacer layer above or below the quantum wells to extend the cavity multiples of half wavelengths. The spacer may have periodic doping peaked at the nulls of the optical field. The material of active region


12


may include quantum wells of InGaAsN or InGaAsNSb, barrier layers of GaAs or GaAsN, GaAsSbN or a combination thereof, and confining layers of GaAs, AlGaAs, GaAsP or some combination thereof. The quantum wells of region


12


are not doped or may be unintentionally doped. On region


12


may be a region


13


having a partially oxidized layer that extends inward up to the periphery of where the current of an operating VCSEL


10


may be confined is centered on the null of the electric field. The material may include AlGaAs which has a high proportion of Al for lateral oxidation of the region. The material may be lattice matched and P-doped. On region


13


is a tunnel junction


14


having highly doped P and N materials adjacent to each other to form a junction. The materials may be GaAs, AlGaAs or InGaAs. They may be or may not be lattice matched. On tunnel junction


14


is an N mirror


15


. Mirror


15


may have 16 to 25 pairs of layers of AlGaAs and GaAs and may contain a spacer which is a multiple of half wavelengths thick which may be periodically doped.




A 1550 nm VCSEL


10


may be a GaAs substrate based device. The material structure of this VCSEL may be the same as that of the 1310 nm GaAs VCSEL. The content distribution of the various materials may vary from one illustrative embodiment to another.




VCSEL


10


of

FIG. 1

may be structured as an island with volume


18


of material removed or with a trench


19


around it or at least partially around it. Both types of structures are illustrated on the right and left sides, respectively, of FIG.


1


. Island


20


is formed by the removal of material from volume


18


. Island


20


or trench


19


is around at least active region


12


of VCSEL


10


and may provide tunnel junction


14


with D.C. isolation. Island


20


or trench


19


may be used as an entry or source for lateral oxidation


23


to provide added isolation. Oxidation trenches


23


provide current confinement and thus may reduce variability in the diameter of the aperture. However, to obtain low capacitance, an isolation implant of volumes


21


and


22


may be utilized. Implants


21


and


22


are of sufficient depth to create a semi-insulating isolation to reduce the capacitance between tunnel junction


14


and the substrate. Buried implant


21


may go down through tunnel junction


14


and through a region including tunnel junction


14


and the quantum wells of active region


12


. The implant may be through more layers or regions, including down past active region


12


. Implant species may include H


+


ions, D


+


ions or He


++


ions. The energy range of an implant may be between 35 KeV and 2000 KeV. The energy dose of the implanting may be between 1E14 and 5E16 atoms/cm


2


and is optimally about 7E14 atoms/cm3.





FIG. 2

shows a VCSEL


30


having an upper mirror structure different than that of VCSEL


10


. However, VCSEL


30


may have a spacer in the active region and/or one of the mirrors as in VCSEL


10


noted above. Like VCSEL


10


, VCSEL


30


has an N mirror


11


on a substrate


36


and an active region


12


on mirror


11


. On active region


12


is an oxidation region


13


with lateral oxidized trenches


23


. Oxidation region


13


is p-doped. On region


13


is tunnel junction


14


. Up to this point, the material and numbers of pairs of layers may be the same as those of VCSEL


10


. But upper N-mirror


15


may have a stack of 11 pairs of layers at a maximum. Yet, the materials of these layers may be the same as those of mirror


15


of VCSEL


10


. From the top of mirror


11


up to the top of mirror


15


, that structure may be an island


24


. On top of mirror


15


is a mirror structure


25


that is an extension of mirror


15


. It is an island


26


relative to the top of mirror


15


. Around island


26


may be a contact


27


on top of mirror


15


. It is regarded as a “recessed contact” in that the distance from the top of mirror


15


to tunnel junction


14


is less than the distance between mirror


15


and junction


14


of VCSEL


10


. For a reduced energy of implantation of ions in VCSEL


10


, implant


21


can reach down into active layer


12


. Implant


22


may be situated in a portion of mirror


11


about or outside the perimeter of island


24


. One may do the same depth implant into or past active region


12


in VCSEL


10


as in VCSEL


30


with more energy but availability of implanters with sufficient energy may be a problem.




A distinguishing feature between VCSEL


10


and VCSEL


30


is the shorter mirror


15


with a dielectric mirror


25


stack or island


26


on mirror


15


of island


24


. Mirror


25


may have 3 to 4 pairs of TiO


2


and SiO


2


, 2 to 3 pairs of Si and SiO


2


, 2 to 3 pairs of Si and Al


2


O


3


, or 4 to 5 pairs of TiO


2


and Al


2


O


3


, respectively.




On top of mirror


15


of VCSEL


10


is a contact


16


and the rest of the top surface of mirror


15


has a layer


17


of dielectric such as, for example, SiO


2


. On the top of mirror


15


of VCSEL


30


is contact


27


and mirror


25


, as noted above. A layer


28


of dielectric on stack


25


may be, for example, SiO


2


. Another contact may be at the bottom of substrate


36


but may be brought up to be connectable from the top of the respective VCSEL


10


or


30


. In both VCSELs, the dielectric may cover light aperture


37


and not block the emitted light.





FIG. 3



a


shows VCSEL


10


having a bonding pad


29


and bridging connection


31


. Even though each of

FIGS. 3



a


,


3




b


and


5


shows a VCSEL device with a bridge, device


10


or


30


may be made without bridging between the bond pad and the device by taking advantage of the buried implant that goes at least through and under the tunnel junction, but which may be also elsewhere in the chip. Trench


19


in

FIG. 3



a


goes around VCSEL


10


and under bridge


31


at an area


38


close to its connection with contact


16


. Bridge


31


, at area


38


over trench


19


, may be an air bridge which might be made with the removal of sacrificial material beneath it, or it may be on a planarization layer, or have a trench filling under it or it may be electroplated with a patterned electroplating technique. Around and under bonding pad


29


and its connecting bridge


31


to contact


16


may be a dielectric


32


. Dielectric


32


may be contiguous with dielectric


17


of VCSEL


10


. Dielectric


17


is situated over VCSEL


10


light aperture


37


. Dielectric


32


might not be used in this pad


29


configuration. Trench


19


goes around pad


29


and along the sides of bridge


31


, but on the periphery of dielectric


32


if pad


29


utilizes a dielectric. The dielectric may provide both reduced capacitance and D.C. isolation of the VCSEL. VCSEL


10


of

FIG. 3



a


may have interior trenches like those of VCSEL


10


in

FIG. 4



a.







FIG. 3



b


shows VCSEL


10


having several bridges


39


connecting bonding pad


29


to contact


16


. VCSEL


10


of this Figure may have interior trenches like trenches


33


of VCSEL


10


in

FIG. 4



a


as described below. VCSEL


10


of

FIG. 3



b


may also have a trench at least around a portion of its perimeter.





FIG. 4



a


reveals VCSEL


10


having interior oxidation trenches


33


. VCSEL


30


of

FIG. 2

may also have trenches


33


.

FIG. 4



b


is a cross-section of trenches


33


which extend through top mirror


15


, tunnel junction


14


and oxidizable layer


13


having, for example, a high content of aluminum. Trenches


33


may extend into or past active area


12


. Trenches


33


enable oxidation in various layers, particularly layer


13


, having a high proportion of aluminum or other easily oxidizable material, to better provide isolation for tunnel junction


14


and current confinement. Trenches


33


may define aperture


37


.





FIG. 5

shows not only interior trenches


33


of VCSEL


10


but also trenches


34


along connecting bridge


31


and trenches


35


in pad


29


. The layers from mirror


15


of VCSEL


10


down to substrate


36


may be present through that portion of pad


29


and bridge


31


. Thus, trenches


34


and


35


may go down to oxidizable layer


13


. Trenches


34


and


35


may enable oxidation in layer


13


under pad


29


and bridge


31


for some isolation of the pad and connecting bridge. In an illustrative example, the trenches may be about 4 by 4 microns wide and be from 10 to 20 microns apart from one another. The bridge may or may not be present.




Although the invention has been described with respect to at least one illustrative embodiment, many variations and modifications will become apparent to those skilled in the art upon reading the present specification. It is therefore the intention that the appended claims be interpreted as broadly as possible in view of the prior art to include all such variations and modifications.



Claims
  • 1. A VCSEL comprising:a substrate; a first mirror above said substrate; an active region above said first mirror; a tunnel junction above said active region; a second mirror above said tunnel junction; and an isolation implant in a portion of said second mirror, tunnel junction and active region.
  • 2. The VCSEL of claim 1, having an island that comprises said active region, tunnel junction and second mirror.
  • 3. The VCSEL of claim 2, wherein the island substantially isolates said tunnel junction.
  • 4. The VCSEL of claim 1, wherein a trench is situated around a significant portion of said active region, tunnel junction and second mirror.
  • 5. The VCSEL of claim 4, wherein the trench substantially isolates said tunnel junction.
  • 6. The VCSEL of claim 2, wherein the island further comprises a bond pad.
  • 7. The VCSEL of claim 4, wherein the trench is further situated around a substantial portion of the bond pad.
  • 8. The VCSEL of claim 2, wherein said first and second mirrors are N-doped mirrors.
  • 9. The VCSEL of claim 4, wherein said first and second mirrors are N-doped mirrors.
  • 10. The VCSEL of claim 8, further comprising a P-doped region.
  • 11. The VCSEL of claim 10, wherein a peripheral portion of said P-doped region is oxidized.
  • 12. The VCSEL of claim 11, further comprising a plurality of vertical internal trenches.
  • 13. The VCSEL of claim 9, further comprising a P-doped region.
  • 14. The VCSEL of claim 13, wherein a peripheral portion of said P-doped region is oxidized.
  • 15. The VCSEL of claim 14, further comprising a plurality of vertical internal trenches.
  • 16. A VCSEL comprising:a substrate; a first mirror above said substrate; an active region above said first mirror; an island isolated tunnel junction above said active region; a second mirror above said tunnel junction; a buried isolation implant in a portion of said first mirror, tunnel junction, and active region; and a third mirror above a first portion of said second mirror.
  • 17. The VCSEL of claim 16, further comprising at least one layer between said island isolated tunnel junction and active region, wherein said at least one layer is substantially oxidized about its peripheral region.
  • 18. The VCSEL of claim 17, further comprising a plurality of vertical internal trenches.
  • 19. The VCSEL of claim 18 further comprising a conductive contact above a second portion of said second mirror.
  • 20. A VCSEL comprising:a first mirror; an active region above said mirror; an oxide region above said active region; and a second mirror above said oxide region; a trench extending through said second mirror, said oxide region and at least part of said active region, said trench having a bottom; and an isolation implant region extending down from the bottom of the trench.
  • 21. The VCSEL of claim 20, wherein said first mirror is above a substrate.
  • 22. The VCSEL of claim 21, wherein said second mirror, said oxide region and at least part of said active region form an island.
  • 23. The VCSEL of claim 22, wherein said second mirror has an isolation implant in a peripheral portion.
  • 24. The VCSEL of claim 23, further comprising a conductive contact formed above said second mirror.
  • 25. The VCSEL of claim 24, wherein said first and second mirrors are N-doped.
  • 26. The VCSEL of claim 25, wherein said active region has at least one quantum well.
  • 27. The VCSEL of claim 26, wherein said first mirror has an isolation implant in a peripheral portion beyond said island and extending from the bottom of the trench.
  • 28. The VCSEL of claim 27, further comprising a conductive pad having a connection said conductive contact.
  • 29. The VCSEL of claim 28, wherein said conductive pad is on a material at a level of a top of said island.
  • 30. The VCSEL of claim 21, further comprising a tunnel junction above said active region, and said trench also extends through said tunnel junction.
  • 31. The VCSEL of claim 30, wherein said second mirror has an isolation implant in a peripheral portion.
  • 32. The VCSEL of claim 31, wherein said first and second mirrors are N-doped.
  • 33. The VCSEL of claim 32, wherein said oxide region is P-doped.
  • 34. The VCSEL of claim 33, wherein said oxide region has oxidized material in a peripheral portion of said oxide region.
  • 35. The VCSEL of claim 34, wherein said active region has at least one quantum well.
  • 36. The VCSEL of claim 35, further comprising a conductive contact on a peripheral portion of a top surface of said second mirror.
  • 37. The VCSEL of claim 36, further comprising a conductive pad having a bridge connected to said conductive contact.
  • 38. The VCSEL of claim 37 including a trench that extends around a portion of a periphery of said conductive pad and bridge.
  • 39. The VCSEL of claim 38, wherein said conductive pad and bridge are above an isolation implanted material of said second mirror.
  • 40. The VCSEL of claim 39, wherein said bridge is above a planarizing material over a portion of the trench at the periphery of said first mirror, said tunnel junction, said oxide region and said active region.
  • 41. The VCSEL of claim 39, wherein said conductive pad and bridge are above a dielectric material.
  • 42. The VCSEL of claim 39, including at least one trench through said second mirror, said tunnel junction and at least said oxide region within the peripheral portion of the isolation implant.
  • 43. The VCSEL of claim 39 including a plurality of trenches through said conductive pad and bridge, material of said second mirror, tunnel diode and oxide region.
  • 44. A VCSEL comprising:a first mirror; an active region above said first mirror; an oxidation region above said active region; a tunnel junction above said oxidation region; a first part of a second mirror above said tunnel junction; an implant on a peripheral portion of the first part of said second mirror, said tunnel junction, and at least part of said active region; and a second part of said second mirror above the first part of said second mirror.
  • 45. The VCSEL of claim 44, wherein said first and second mirrors are n-doped.
  • 46. The VCSEL of claim 45, wherein said oxidation layer is P-doped.
  • 47. The VCSEL of claim 46, wherein the second part of said second mirror forms a island above the first part of said second mirror.
  • 48. The VCSEL of clam 47, wherein said active region, oxidation region, tunnel junction and second mirror form an island.
  • 49. The VCSEL of claim 47, wherein a peripheral trench at least partially surrounds the first part of said second mirror and said tunnel junction.
  • 50. The VCSEL of claim 48, further comprising a conductive contact above the first part of said second mirror.
  • 51. The VCSEL of claim 50, further comprising:a conductive pad; and a bridge connecting said conductive pad to said conductive contact.
  • 52. The VCSEL of claim 51, wherein said conductive pad and bridge are on a planarized material.
  • 53. The VCSEL of claim 52, wherein the planarized material is above an isolation implanted material.
  • 54. The VCSEL of claim 53 further comprising at least one vertical trench through at least a portion of said second mirror, said tunnel junction and said oxidation region.
  • 55. The VCSEL of claim 49, further comprising a conductive contact above the first part of said second mirror.
  • 56. The VCSEL of claim 55, further comprising:a conductive pad; and a bridge connecting said conductive pad to said conductive contact.
  • 57. The VCSEL of claim 56, wherein said conductive pad and bridge are above an implanted material.
  • 58. The VCSEL of claim 57, wherein a dielectric material is situated between said conductive pad and the implanted material and between said bridge and the implanted material.
  • 59. The VCSEL of claim 58, further comprising a plurality of vertical trenches in said conductive pad and bridge, wherein each of said vertical trenches goes from said conductive pad and bridge to an oxidation layer.
  • 60. The VCSEL of claim 59, wherein said peripheral trench is planarized with a material.
  • 61. The VCSEL of claim 60, further comprising at least one vertical trench through at least a portion of said second mirror, said tunnel junction and said oxidation layer.
  • 62. A VCSEL comprising:first means for reflecting; means for converting current to light above said first means for reflecting; means for confining with oxidation above said means for converting current to light; mean for tunneling above said means for confining; second means for reflecting above said means for tunneling; and mean for implant isolating in at least a portion of the periphery of said means for converting current to light.
  • 63. The VCSEL of claim 62, wherein:said first and second means for reflecting are N-doped; and said means for confining is P-doped.
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