The invention relates generally to a loop antenna and, more particularly, to a loop antenna for use in the terahertz frequency range.
Loop antennas have been used in a wide variety of applications over the years, but, for high frequency applications (i.e., terahertz radiation) and for monolithically integrated antennas, there can be a variety of barriers to the use of loops antennas. For example, there can be loses associated with packaging material between the antenna and transmission media. Another example is losses due to parasitic radiation and interface from trances in printed circuit boards or PCBs. Therefore, there is a need for an improved system. Some examples of conventional systems are: U.S. Pat. No. 7,545,329; and J. Grzyb, D. Liu, U. Pfeiffer, and B. Gaucher, “Wideband cavity-backed folded dipole superstrate antenna for 60 GHz applications,” Proceedings of the 2006 IEEE AP-S International Symposium and UNSC/URSI and AMEREM Meetings, pp. 3939-3942, Albuquerque, N.Mex. , Jul. 9-14, 2006.
An embodiment of the present invention, accordingly, provides an apparatus. The apparatus comprises a substrate having a first feed terminal, a second feed terminal, and a ground terminal; a first metallization layer disposed over the substrate, wherein the first metallization layer includes: a first window region; a first conductive region disposed over and in electrical contact with the first feed terminal, wherein first conductive region is substantially circular, and wherein the first conductive region is located within the first window region; a second conductive region disposed over and in electrical contact with the second feed terminal, wherein the second conductive region is substantially circular, and wherein the first conductive region is located within the first window region; and a third conductive region disposed over and in electrical contact with the ground terminal, wherein the third conductive region substantially surrounds the first window region; and a second metallization layer disposed over and in electrical contact with the first, second, and third conductive regions of the first metallization layer, wherein the second metallization layer includes a second window region that is at least partially aligned with the first window region.
In accordance with an embodiment of the present invention, the ground terminal further comprises a first ground terminal, and wherein the substrate has a second ground terminal, and wherein the first feed terminal, the second feed terminal, the first ground terminal, and the second ground terminal are substantially aligned.
In accordance with an embodiment of the present invention, the first window region is substantially rectangular.
In accordance with an embodiment of the present invention, the apparatus further comprises: a first via that extends between the first ground terminal and the third conductive region; a second via that extends between the second ground terminal and the third conductive region; a third via that extends between the first feed terminal and the first conductive region; and a fourth via that extends between the second feed terminal and the second conductive region.
In accordance with an embodiment of the present invention, the second metallization layer further comprises: a fourth conductive region that substantially surrounds the second widow conductive region and that is in electrical contact with the third conductive region; a fifth conductive region that bisects the second window region and that is electrical contact with the fourth conductive region; a sixth conductive region that is disposed over the first conductive region, is generally coextensive with the first conductive region, and is in electrical contact with the first and fifth conductive regions; and a seventh conductive region that is disposed over the second conductive region, is generally coextensive with the second conductive region, and is in electrical contact with the second and fifth conductive regions.
In accordance with an embodiment of the present invention, the apparatus further comprises: a set of fifth vias that extends between the third and fourth conductive regions; a sixth via that extends between the first and sixth conductive regions; and a seventh via that extends between the second and seventh conductive regions.
In accordance with an embodiment of the present invention, the first feed terminal, the second feed terminal, the first ground terminal, and the second ground terminal are bondpads.
In accordance with an embodiment of the present invention, an apparatus is provided. The apparatus comprises an integrated circuit (IC) having: radio frequency (RF) circuitry; a first bondpad that is coupled to the RF circuitry; a second bondpad that is coupled to the RF circuitry; and a third bondpad that is coupled to the RF circuitry and that is coupled to ground; an antenna package having: a substrate; a fourth bondpad that is located in the substrate and that is in electrical contact with the first bondpad; a fifth bondpad that is located in the substrate and that is in electrical contact with the second bondpad; a sixth bondpad that is located in the substrate and that is in electrical contact with the third bondpad; a first metallization layer disposed over the substrate, wherein the first metallization layer includes: a first window region; a first conductive region disposed over and in electrical contact with the fourth bondpad, wherein first conductive region is substantially circular, and wherein the first conductive region is located within the first window region; a second conductive region disposed over and in electrical contact with the fifth bondpad, wherein the second conductive region is substantially circular, and wherein the first conductive region is located within the first window region; and a third conductive region disposed over and in electrical contact with the sixth bondpad, wherein the third conductive region substantially surrounds the first window region; and a second metallization layer disposed over and in electrical contact with the first, second, and third conductive regions of the first metallization layer, wherein the second metallization layer includes a second window region that is at least partially aligned with the first window region.
In accordance with an embodiment of the present invention, antenna package further comprises a seventh bondpad, and wherein the fourth, fifth, sixth, and seventh bond pads are substantially aligned, and wherein the IC further comprises an eighth bondpad that is coupled to the RF circuitry and that is coupled to ground, and wherein the seventh bondpad is in electrical contact with the eighth bondpad.
In accordance with an embodiment of the present invention, the apparatus further comprises: a first via that extends between the sixth bondpad and the third conductive region; a second via that extends between the seventh bondpad and the third conductive region; a third via that extends between the fourth bondpad and the first conductive region; and a fourth via that extends between the fifth bondpad and the second conductive region.
In accordance with an embodiment of the present invention, the second metallization layer further comprises: a fourth conductive region that substantially surrounds the second widow conductive region and that is in electrical contact with the third conductive region; a fifth conductive region that bisects the second window region and that is electrical contact with the fourth conductive region; a sixth conductive region that is disposed over the first conductive region, is generally coextensive with the first conductive region, and is in electrical contact with the first and fifth conductive regions; and a seventh conductive region that is disposed over the second conductive region, is generally coextensive with the second conductive region, and is in electrical contact with the second and fifth conductive regions.
In accordance with an embodiment of the present invention, the apparatus further comprises: a set of fifth vias that extends between the third and fourth conductive regions; a sixth via that extends between the first and sixth conductive regions; and a seventh via that extends between the second and seventh conductive regions.
In accordance with an embodiment of the present invention, an apparatus is provided. The apparatus comprises an integrated circuit (IC) having: a plurality of RF transceivers; a plurality of sets of bondpads, wherein each set of bondpads is associated with at least one of the RF transceivers, and wherein each set of bondpads includes: a first bondpad that is coupled to its associated RF transceiver; a second bondpad that is coupled to its associated RF transceiver; a third bondpad that is coupled to its associated RF transceiver and that is coupled to ground; and a fourth bondpad that is coupled to its associated RF transceiver and that is coupled to ground; an antenna package having: a substrate; an array of antenna, wherein each antenna is associated with at least of the RF transceivers, and wherein each antenna includes: a fifth bondpad that is located in the substrate and that is in electrical contact with its associated first bondpad; a sixth bondpad that is located in the substrate and that is in electrical contact with its associated second bondpad; a seventh bondpad that is located in the substrate and that is in electrical contact with its associated third bondpad; an eighth bondpad that is located in the substrate and that is in electrical contact with its associated third bondpad, wherein the fifth, sixth, seventh, and eight bondpads are substantially aligned; a first metallization layer disposed over the substrate, wherein the first metallization layer includes: a first window region; a first conductive region disposed over and in electrical contact with the fifth bondpad, wherein first conductive region is substantially circular, and wherein the first conductive region is located within the first window region; a second conductive region disposed over and in electrical contact with the sixth bondpad, wherein the second conductive region is substantially circular, and wherein the first conductive region is located within the first window region; and a third conductive region disposed over and in electrical contact with the seventh and eighth bondpads, wherein the third conductive region substantially surrounds the first window region; and a second metallization layer disposed over and in electrical contact with the first, second, and third conductive regions of the first metallization layer, wherein the second metallization layer includes a second window region that is at least partially aligned with the first window region; and a high impedance surface (HIS) disposed on the substrate and substantially surrounding the array of antennas.
In accordance with an embodiment of the present invention, the apparatus further comprises: a first via that extends between the seventh bondpad and the third conductive region; a second via that extends between the eighth bondpad and the third conductive region; a third via that extends between the fifth bondpad and the first conductive region; and a fourth via that extends between the sixth bondpad and the second conductive region.
In accordance with an embodiment of the present invention, the second metallization layer further comprises: a fourth conductive region that substantially surrounds the second widow conductive region and that is in electrical contact with the third conductive region; a fifth conductive region that bisects the second window region and that is electrical contact with the fourth conductive region; a sixth conductive region that is disposed over the first conductive region, is generally coextensive with the first conductive region, and is in electrical contact with the first and fifth conductive regions; and a seventh conductive region that is disposed over the second conductive region, is generally coextensive with the second conductive region, and is in electrical contact with the second and fifth conductive regions.
In accordance with an embodiment of the present invention, the apparatus further comprises: a set of fifth vias that extends between the third and fourth conductive regions; a sixth via that extends between the first and sixth conductive regions; and a seventh via that extends between the second and seventh conductive regions.
The foregoing has outlined rather broadly the features and technical advantages of the present invention in order that the detailed description of the invention that follows may be better understood. Additional features and advantages of the invention will be described hereinafter which form the subject of the claims of the invention. It should be appreciated by those skilled in the art that the conception and the specific embodiment disclosed may be readily utilized as a basis for modifying or designing other structures for carrying out the same purposes of the present invention. It should also be realized by those skilled in the art that such equivalent constructions do not depart from the spirit and scope of the invention as set forth in the appended claims.
For a more complete understanding of the present invention, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
Refer now to the drawings wherein depicted elements are, for the sake of clarity, not necessarily shown to scale and wherein like or similar elements are designated by the same reference numeral through the several views.
Turning to
In
Turning to
A metallization layer 308 (which can, for example, be formed of copper or aluminum) is then formed so as to be disposed over the substrate 302 with an interlayer dielectric (which is transparent to radiation in the frequency of interest, such as terahertz radiation) formed therebetween. As shown, this metallization layer 308 generally includes regions 402, 404, and 406. Region 402 substantially surrounds the window region 408 and is in electrical contact with bondpads 304-1 and 304-4 through vias 306-1 and 306-4, respectively, so as to form a ground plane. Regions 404 and 406 are generally circular regions (which can have a diameter of about 180 μm and be displaced from the edge of the window region 408 by about 40 μm) that are in electrical contact with bondpads 304-2 and 304-3, respectively, through vias 306-2 and 306-3. Vias 310-1 and 310-2 (which can also, for example, be formed of tungsten) can be formed over regions 404 and 406, respectively, and vias 310-3 to 310-18 (which can also, for example, be formed of tungsten and be separated from one another by about 220 μm) are located on region 402 along its periphery so as to substantially form a “via wall.”
As shown in
By using this structure to, for example, generate radiation at 160 GHz, the radiation pattern shown in
Having thus described the present invention by reference to certain of its preferred embodiments, it is noted that the embodiments disclosed are illustrative rather than limiting in nature and that a wide range of variations, modifications, changes, and substitutions are contemplated in the foregoing disclosure and, in some instances, some features of the present invention may be employed without a corresponding use of the other features. Accordingly, it is appropriate that the appended claims be construed broadly and in a manner consistent with the scope of the invention.