The field of the invention is directed to systems and methods for converting solar energy. More particularly, the invention relates to solar cells.
The overall global market share of electricity supply generated by solar cells is still very small, far below 1%, due to high cost. Since solar cells are also an ideal means for electricity generation for those remote areas that have no access to an electrical grid, it is highly desirable to find effective ways to further reduce the overall cost of solar cells and integrate them with other functionalities to realize a much increased overall efficiency of utilizing free solar energy in developing countries. For instance, solar cells may be combined with water heaters to utilize the low grade thermal energy for household hot water applications.
Many initiatives have been aimed at reducing the total installed cost of solar energy systems. Some of the most effective approaches to reach this goal have aimed at increasing photovoltaic (“PV”) solar cell efficiency and cutting the amount of materials utilized, in order to reduce the total balance of system (“BOS”) cost.
Currently, some of the most promising solar cells technologies include silicon (“Si”) and cadmium telluride (“CdTe”) thin-film solar cells, which provide, in addition to lower cost, high module efficiencies and the shortest energy payback time. CdTe technologies use little semiconductor materials and few production processes along with very large manufacturing throughput, in contrast to traditional crystalline Si-based mainstream solar cell technologies. However, despite commercial successes, neither Si-based solar cells nor CdTe thin film solar cells are cost effective enough to reach grid parity. That is, these technologies are not efficient enough for rapid market share capture as compared to more traditional energy generation approaches, such coal and other energy sources.
It is therefore highly desirable to further reduce the solar cell module cost through both the increase of the power conversion efficiency and the reduction of the manufacturing cost.
The present disclosure overcomes aforementioned drawbacks by providing cost-effective solar cells that can achieve much higher power conversion efficiency compared to previous technologies. In particular, tandem solar cell embodiments introduced herein include structures that generally comprise two subcell components electrically connected using a conductive contact, such as a point contact or tunnel junction structure, wherein each subcell is configured to efficiently convert a different portion of a solar spectrum without appreciably limiting the other.
As will be described, provided embodiments can advantageously combine low-cost thin-film II-VI solar cell technologies and those of conventional Si solar cells to achieve enhanced performance. For instance, in one tandem solar cell configuration, the top, or front, subcell includes a wide bandgap polycrystalline absorbing material, such as a II-VI material, while the bottom, or back, subcell includes a semiconducting material, such as silicon, with subcells being integrated in a structure that is uniquely capable of reaching the high efficiency required for grid parity.
In one aspect of the present disclosure, a tandem solar cell is provided that includes a first subcell configured to absorb a first portion of a solar spectrum, wherein at least one layer of the first subcell is polycrystalline, and a second subcell configured to absorb a second portion of the solar spectrum, wherein the second subcell is electrically connected to the first subcell through a conductive contact.
In another aspect of the present disclosure, a tandem solar cell is provided that includes a first subcell configured to absorb a first portion of a solar spectrum, and a second subcell configured to absorb a second portion of the solar spectrum, wherein the second subcell includes at least one textured surface and is electrically connected to the first subcell through a conductive contact.
The foregoing and other aspects and advantages of the invention will appear from the following description. In the description, reference is made to the accompanying drawings that form a part hereof, and in which there is shown by way of illustration a preferred embodiment of the invention. Such embodiment does not necessarily represent the full scope of the invention, however, and reference is made therefore to the claims and herein for interpreting the scope of the invention.
The present disclosure provides a novel tandem solar cell for converting solar radiation to electrical energy, with embodiments that include a numbers of innovative features and elements that improve upon previous technologies. In particular, although many prior attempts have been made to integrate Silicon-based (“Si”) solar cell and thin-film solar cell technologies, no appreciable successes have been reached on account of the lack of materials with all the appropriate properties, as well as the challenges of effectively combining different cell elements to achieve high efficiency. Therefore, the present disclosure provides various tandem solar cell implementations that utilize a combination of subcell components tailored to absorb specific portions of the solar spectrum in manner that is efficient and cost-effective.
Referring specifically to
As will be described, the top subcell 102 may include any number thin film layers or structures, including at least one absorber layer configured to absorb a first portion of the solar spectrum incident on the tandem solar cell 100. In some embodiments, the absorber layer(s) may be constructed using polycrystalline materials, and preferably polycrystalline II-VI materials. As may be appreciated, such polycrystalline top subcell 102 implementations are in contrast to previous multi junction solar cell technologies, the latter utilizing single crystal materials deposited on top of a silicon (“Si”) base, for instance.
In some aspects, the absorbing materials in the top subcell 102 may be configured with a bandgap in a range between 1.53 eV and 1.73 eV, although other values may be possible. Specifically, band gaps that provide a current match with bottom subcell 104, as will be described, may be particularly desirable. In general, II-VI materials in the top subcell 102 can include various binary, ternary, quaternary alloys, and so forth. Non-limiting examples of absorber layers can include MgxCd1-xTe, ZnpCd1-pTe, Cu2Zn(Sny,Ge1-y)(Sx,Se1-x) (“CZTGeSSe”), although other materials or compositions may be possible.
In some aspects, the absorber layers in the top subcell 102 can have thicknesses in a range between 0.2 μm and 1 μm, although other values may be possible. Advantageously, thinner absorber layers have a higher built-in internal electric field for better carrier extraction. This property is highly desirable particularly when using polycrystalline materials, in accordance with aspects of the present disclosure, due to its high non-radiative recombination rate resulting from defects in the bulk or on the surface or interface of grain boundaries. In addition, thinner absorber layer thicknesses may also be preferable in order reduce the total number of defects, such as non-radiative recombination centers, and therefore increases overall conversion efficiency, as all the photons are effectively trapped and eventually absorbed inside the solar cell by the scattering at the textured interfaces, as will be described. Furthermore, thinner absorber layers result in much reduced material consumption, and hence lower processing costs. For example, reducing absorbing layers from the typical 3 μm thickness down to 0.2-1 μm, can result in a 93% to 66% reduction. This proven advantage has not been used in current commercial CdTe thin-film solar cell technology.
In some designs, as will be described, absorber layers may be configured using double heterostructure layers, with a doping profile such that the absorber layer is lightly doped and inserted between two more heavily doped barrier layers. Such a double heterostructure design can provide a very strong confinement of photogenerated carriers, with long carrier lifetimes, leading to increased solar cell efficiency. For instance, an ultrathin double-heterostructure, can include CdS/MgxCd1-xTe/MgyCd1-yTe (y>x) or CdS/ZnpCd1-pTe/ZnqCd1-qTe (p>q), although other material compositions and configurations may be possible.
Referring again to
As shown in
In accordance with aspects of the present disclosure, a novel approach for electrically connecting the subcells is provided. In particular, a conductive contact implemented in the conducting layer 108 may be achieved using point contacts, of any shapes, sizes, spacings, spatial distributions and configurations. In particular, the point contacts can include i) metallic contacts, ii) semiconductor type-II quantum dot contacts, iii) conductive oxide contacts, and iv) tunnel junction contacts involving diffused group-II and/or group-VI elements of a polycrystalline or amorphous II-VI semiconductor subcell layers, and so forth, for example through openings in a passivation layer. The last approach may be more cost effective given compatibility with existing manufacturing processes of II-VI thin-film solar cells. Also, in addition to limited shadow areas, point contacts enable use of cheaper, non-transparent metals. Therefore, conductive contact achieved in the manner afforded by the present disclosure can minimize optical absorption, and thereby increase cell efficiency.
Specifically with reference to
As shown in
Specifically with reference to
In particular, the top subcell 301 may be formed using an absorber layer 304, which may include p-MgxCd1-xTe, ZnpCd1-pTe, p-Cu2Zn(Sny,Ge1-y)(Sx,Se4-x), as well as other preferably wide band-gap absorber materials. As shown, the absorber layer 304 may be arranged on a barrier layer 306. In addition, the absorber layer 304 may also be adjacent to a window layer 308, for example a n-CdS layer, forming a dual-layer heterostructure, as described. Non-limiting barrier layer 306 examples can include p-MgyCd1-yTe or ZnqCd1-q Te materials, in dependence of the absorber material utilized. For instance, a p-MgxCd1-xTe absorber would be adjacent to a p-MgyCd1-yTe barrier, and so on. As shown, the barrier layer 306 may also be adjacent to a transparent conductive layer 310 placed distally with respect to the incident radiation, wherein the transparent conductive layer 310 may include a low resistance materials, such as transparent conductive oxide (TCO) or p-ZnTe.
As shown, in some implementations, the top subcell 301 may also include a high restive layer 312, such as TCO, SnO2, and a low resistive layer 314, such as TCO. In addition, the top subcell 301 may further include an anti-reflective (AR) coating 316 providing strong light trapping to enhance the optical absorption. In some aspects, at least one or all of the transparent conductive layer 310, the barrier layer 306, the low resistive layer 314, and the high resistive layer 312 can be textured.
The tandem solar cell 300 also includes a passivation layer 318 placed between the top subcell 301 and bottom subcell 303. In addition, electrical contacts 320 may be formed therein such that an electrical contact is achieved between the top subcell 301 and bottom subcell 303. As illustrated, the electrical contacts 320 may traverse or contact a number of layers, included the passivation layer 318, the transparent conducting layer 310 and the barrier layer 306. By way of example, electrical contacts 320 can include point contacts, such as metal, type-II HS, quantum dot, and other contacts. In addition, the bottom subcell 303 includes one or more textured surfaces 322, as well as bottom contacts 324.
One non-limiting example of tandem solar cell 300 includes: Si/SiOx/TCO/p-MgyCd1-yTe (or ZnqCd1-qTe)/p-MgxCd1-xTe (or ZnpCd1-pTe)/n-CdS/TCO (or SnO2) TCO (or ITO)/AR coating. Another non-limiting example includes Si/SiOx (or SiNx)/TCO (or p-ZnTe)/p-Cu2Zn(Snq,Ge1-q)(Sp,Se1-p)/p-Cu2Zn(Sny,Ge1-y)(Sx,Se4-x)/n-CdS/TCO (or SnO2)/TCO (or ITO)/AR coating; Such structure offers several advantages including that both Si and CZTGeSSe subcells use only earth-abundant and non-toxic elements, reducing fabrication costs.
As described, both surfaces of a Si-based bottom subcell 303 can be textured, as well as all the interfaces of the polycrystalline CZTGeSSe-based top subcell 301 and the top surface of the anti-reflective coating 316, providing strong light trapping to enhance the optical absorption in the CZTGeSSe-based subcell. Therefore, only a very thin layer (for example, 0.2 μm) would be needed for the top subcell 301, a dramatic cost-reduction from conventional 2 μm thick cells. As described, the use of point contacts to connect top and bottom subcells enables the use of non-transparent metal contacts. Due to the limited shadow area of these point contacts, the absorption of the metal contacts will likely be very small, on the order of a few percent of incoming sunlight. In addition, the integration of II-VI materials on Si enables the formation of diffused tunnel junctions at the heterostructure interfaces. Such tunnel junctions have advantageously low optical loss and series resistance. Moreover, the use of heterojunctions for the bottom Si subcell may also reduce the Si usage.
A preliminary cost analysis shows that such a tandem cell design, in accordance with
Modeling results show that the tandem cell proposed herein has a theoretical efficiency limit over 40% at one sun, as illustrated in
Specifically with reference to
As shown in
In addition, the bottom subcell can be a modified amorphous silicon/crystalline silicon heterojunction (SHJ) solar cell. This type of cell configuration was demonstrated to achieve an open-circuit voltage of Voc=750 mV and implied-Voc=767 mV. One drawback of this design as a stand-alone device is that the amorphous silicon (a-Si:H) front passivation and emitter layers absorb blue light parasitically. However, by integration into a II-VI/silicon tandem solar cell, in accordance with the present disclosure, such parasitic absorption is a non-issue. This is because all of the blue light will be absorbed by the top subcell cell and so the a-Si:H layers in the bottom subcell can be optimized to achieve maximum Voc and fill factor (FF), without compromising the short-circuit current (Jsc). In addition, both surfaces of the Si bottom subcell may be textured, and thus all the interfaces of the polycrystalline II-VI thin-film top cell may be textured as well, providing optimal light scattering to enhance the effective optical thickness of both subcells.
As shown in
With reference to the tunnel junction between the a-Si:H n+ and MgCdTe p+ layers, as shown in
The present invention has been described in terms of one or more preferred embodiments, and it should be appreciated that many equivalents, alternatives, variations, and modifications, aside from those expressly stated, are possible and within the scope of the invention.
This application is based on, and incorporates herein by reference, in its entirety, U.S. Application Ser. No. 62/095,436 filed on Dec. 22, 2014 and entitled “LOW-COST AND HIGH-EFFICIENCY TANDEM PHOTOVOLTAIC CELLS.”
This invention was made with government support under DOE Cooperative Agreement No. DE-EE0004946 awarded by the U.S. Department of Energy. The government has certain rights in the invention.
Number | Date | Country | |
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62095436 | Dec 2014 | US |